JPH08138985A - Automatic semiconductor-substrate treatment method - Google Patents

Abstract

PURPOSE: To obtain an automatic semiconductor-substrate treatment method in which the labor saving and the automation of a semiconductor production line can be achieved without using an indirect information medium by a method wherein production information on a semiconductor-substrate treatment process, control information on a production apparatus and information on a production result are recorded in a semiconductor substrate and the recorded information is reproduced. CONSTITUTION: In a semiconductor-substrate treatment apparatus 1 which is interlocked with a reproducing device 2, a digital pit 5b which is formed at the peripheral edge part of a semiconductor substrate 4 is reproduced by the reproducing device 2, and the semiconductor-substrate treatment apparatus 1 is controlled on the basis of reproduced information. As a reproducing method, a laser beam 3a is shone at a digital pit pattern 5 formed at the peripheral edge part of the semiconductor substrate, and the information is reproduced. As information which is to be formed at the peripheral edge part of the semiconductor substrate 4, it is preferable that information which covers a plurality of processes is recorded as far as possible and that the digital pit pattern 5 for additional information is formed in a later hot etching process. Then, the treatment process of the semiconductor substrate can be automated continuously.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the field of semiconductor device manufacturing, and is particularly effective when used for automation of a semiconductor substrate manufacturing line.

[0002]

2. Description of the Related Art In the long history of semiconductor manufacturing lines,
Compared with other production lines, the most difficult factor is factory automation (FA) and labor saving. Since a single semiconductor substrate is always processed by an external information medium such as a manufacturing control manual until the final process, the external information medium always controls the semiconductor substrate by a method involving human intervention, and a human performs the operation of the semiconductor manufacturing apparatus. There is.

In recent years, FA is manufactured by using a bar code, an ID code, or an indirect information medium such as a floppy medium on a jig for storing a semiconductor substrate. For example, in a semiconductor device manufacturing process, an example of using a floppy disk as a medium for information required for manufacturing is disclosed in Japanese Patent Application Laid-Open No. 61-84845.
That is, as shown in FIG. 13, first, the position data and the characteristic data of the individual chips in the semiconductor wafer (semiconductor substrate) obtained by the test by the prober 44 are calculated by the arithmetic unit 4.
5 to determine the category and position coordinate of each chip, record the mapping data on the floppy disk 47 (die sort), and then the floppy disk 47 on the side of the assembling apparatus, for example, the pellet bonding apparatus 50 side. By reading with the floppy disk reader 48, the pellet bonding device 50 is operated based on the information of each chip.

[0004]

However, in the above example, since the format of the wafer mapping data created based on the test of the wafer is determined by the standard, it matches the format of the data reading device on the assembly device side. Often not. Therefore, the registration of the target chip, which is used for matching the mapping data and the wafer set on the assembly device side, on the assembly device side is
It is done manually, reducing production efficiency.

As described above, as long as the manufacturing is performed using the indirect information medium, human intervention is unavoidable, and FA conversion,
The contents of indirect information are complicated and the capital investment for FA is large, which makes labor saving and automation difficult.

Therefore, it is an object of the present invention to achieve labor saving and automation in a semiconductor manufacturing line without using an indirect information medium.

The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

[0008]

The outline of the representative one of the inventions disclosed in the present application will be briefly described as follows. That is, manufacturing information of a semiconductor substrate processing step, manufacturing device control information, and manufacturing result information are recorded on a semiconductor substrate, and the recorded information is reproduced from the semiconductor substrate by a reproducing device that can be linked with the semiconductor substrate processing device. As a result, the semiconductor substrate is automatically processed in association with the semiconductor substrate processing apparatus.

[0009]

According to the above-mentioned means, since the device is directly read from the semiconductor substrate to be processed and the individual automatic processing is performed without using the indirect information medium, no human intervention is required. Therefore, it is possible to achieve labor saving and automation in the semiconductor substrate processing step without increasing the facility investment amount of FA.

[0010]

Embodiment 1 An embodiment of the present invention will be specifically described below with reference to the drawings. FIG. 1 is a flow chart of a photoetching process step of transferring a mask pattern of an integrated circuit onto a semiconductor substrate. The photoetching process basically consists of a photoresist coating process, a mask pattern exposure process, and an etching process. In the photoresist coating process, a photoresist serving as a photosensitizer is coated on the semiconductor substrate while rotating the semiconductor substrate at high speed. A resist coating device (spinner) is used for this treatment.

In the mask pattern exposure process, a pattern forming mask on which an insulating film pattern and a wiring pattern of an integrated circuit chip are formed is set in an exposure device and the mask pattern is transferred to a photoresist on a semiconductor substrate.

In the etching process, the semiconductor substrate on which the mask pattern has been transferred is dry-etched or wet-etched to form an insulating film or wiring pattern. In the case of a positive resist, the unexposed portion remains, and in the case of a negative resist, the exposed portion remains.

According to the present invention, in mask pattern exposure processing, manufacturing information, manufacturing apparatus control information, or manufacturing result information of a process to be processed later is digitally coded in an area other than the device forming area of the pattern forming mask, and the unevenness is obtained. By forming a pattern (hereinafter, collectively referred to as a digital pit pattern) which is converted into a signal by a difference in reflectance or reflectance in a region corresponding to the peripheral portion of the semiconductor substrate 4 as shown in FIG. Recording on the substrate 4 is attempted. By forming this digital pit pattern 5, in the manufacturing apparatus of the process to be processed later,
Digitally encoded information is read from the semiconductor substrate and automatically processed accordingly. In this case, for example, as shown in FIG. 1 and FIG. 3, in the semiconductor substrate processing apparatus 1 which is interlocked with the reproducing apparatus 2, the digital pits 5b provided in the peripheral portion of the semiconductor substrate 4 are reproduced by the reproducing apparatus 2, and the reproduction is performed. The semiconductor substrate processing apparatus 1 is controlled based on the information. As a reproducing method, the semiconductor substrate 4 is rotated and the laser beam 3a is irradiated onto the digital pit pattern 5 formed on the peripheral portion of the semiconductor substrate 4 to reproduce. In this case, as the center of rotation of the semiconductor substrate 4, a target for alignment may be used or a new target may be provided.

Preferably, the information provided in the peripheral portion of the semiconductor substrate 4 is recorded as many steps as possible, and a digital pit pattern of additional information is formed in a subsequent photoetching step. Can be consistently automated.

It should be noted that various moving image information such as a dimension inspection can be image-encoded and recorded at any time.

Next, the process of forming the digital pit pattern 5 in the photoetching process will be described.
Since the digital pit pattern 5 is preferably formed as early as possible in the semiconductor substrate processing step, the surface of the semiconductor substrate 4 is thermally oxidized to serve as an impurity introduction mask for forming wells or a gate insulating film of a MOS transistor. The photo-etching process of the first insulating film used as is used. First, as shown in FIG. 4, the surface of the semiconductor substrate 4 is thermally oxidized to form the first insulating film 6.

Next, a photoresist 7 is applied on the first insulating film 6 and exposed by using a mask for forming a digital pit pattern of manufacturing information and manufacturing apparatus control information on the peripheral portion of the semiconductor substrate 4. Then the same photoresist 7
Is exposed using a reticle and a stepper for forming a well pattern or a device pattern. On this occasion,
The order of exposing the digital pit pattern and exposing the device pattern may be reversed. Next, the exposed semiconductor substrate 4 is etched using a dry etching apparatus or a wet etching apparatus. As a result, the device pattern and the uneven digital pit pattern 5 are simultaneously formed,
Manufacturing information and manufacturing apparatus control information are recorded on the semiconductor substrate 4.

Steps after the digital pit pattern 5 is formed,
For example, the photoresist 7 remaining on the first insulating film 6
From the ashing step of removing the ash, the ashing device can be provided with a digital pit pattern reader and the device can be operated according to the read information. In that case, as shown in FIG. 5, while rotating the semiconductor substrate 4 in the direction of the arrow, the uneven digital pit pattern 5 is read by the laser beam 3a of the reading device, and the ashing device automatically detects the read information. To start operation.

Even when additional manufacturing information and manufacturing control information are recorded, a digital pit pattern may be formed in the subsequent photoetching step in the same manner as described above. As another method, for example, a digital pattern can be formed by irradiating the peripheral portion of the semiconductor substrate with pulsed light of a digital signal by a semiconductor laser light while rotating the semiconductor substrate. FIG. 6 shows a method of recording additional manufacturing information and manufacturing control information. First, the second insulating film 10 is formed on the digital pit pattern formed of the first insulating film 6 by using, for example, the CVD method. A first wiring layer 11 for forming, for example, a gate electrode of a MOS transistor is formed thereon by CVD. Next, the first wiring layer 11 is patterned. Thereafter, while rotating the semiconductor substrate 4, the photoresist 11 on the peripheral portion of the semiconductor substrate 4 is irradiated with the pulsed light 8 of the digital signal. The semiconductor substrate 4 exposed by such a method is subjected to a wet etching or a dry etching as shown in FIG.
As shown in FIG. 5, a device pattern exposed by the reticle and a digital pit pattern 11a exposed by the pulsed light 8 of the digital signal are formed. In this case, when an unnecessary film that cannot be recorded or reproduced is newly formed, the unnecessary film may be removed by etching at any time by a photoresist method or the like only on the peripheral portion. Also, if you want to keep the previous information,
You may use the digital pit pattern 5 empty area shown in FIG.

[0020]

Second Embodiment In this embodiment, a method of forming a digital pit pattern of manufacturing information, manufacturing control information and manufacturing result information on a film formed on a semiconductor substrate using a semiconductor laser beam will be described.

FIG. 8A shows a data recording method using a two-phase polymer. In this method, the two-phase polymer 15 is formed on the semiconductor substrate 13 with the insulating film 14 interposed therebetween, and the laser beam 16 is irradiated to deform and hold the upper layer 15a to store information. According to this method, semiconductor substrate processing steps such as oxidation, diffusion, CVD, sputtering,
It becomes possible to select each manufacturing device and each inspection device for each process that requires ion implantation, etc.By recording the post-manufacturing data of each process in the digital pit pattern area in real time as needed, the strictness of the next process It is a method that enables control, and is a method that achieves consistent and automatic control of semiconductor substrate processing steps.

FIG. 8B shows a data recording method using a single metal recording film. In this method, a single metal recording film 19 is formed on the semiconductor substrate 17 via the insulating film 18. The surface of the single metal recording film 19 is formed in the shape of a moth so as to suppress the reflection of light, and the heat of the laser beam 20 makes the moth's eye part gentle to increase the reflectance of light. By doing so, information is recorded. Regarding this technology, please refer to "Nikkei Electronics
1986.1.13 (no386) "(published by Nikkei Inc.) No. 14
Related technology is described from page 9, column 3, line 4 to page 150, column 1, line 16. As a method for forming the surface in the shape of a moth, the conventional sputtering technique and photoetching technique are used. The material of the single metal recording film 19 is 1200, which is the temperature for the heat treatment of the semiconductor substrate.
It is preferable to use a material that does not erase the recorded information at a temperature of 1800 to 1800 degrees, for example, a refractory metal such as platinum, tungsten, tantalum, molybdenum, or titanium. It is particularly preferable to use platinum or tungsten, which has a high reflectance. By using this method, it is possible to record in the digital pit pattern area in real time at any time, which enables strict control and control of the next process.
It has the advantage that it is resistant to heat and information is not easily erased.

Also in the case of these methods, as in the case of the first embodiment, in the step of newly forming an unnecessary film which cannot be recorded or reproduced, the unnecessary film is always etched by a photo-etching method or the like only on the peripheral portion. However, it has the advantage that conventional semiconductor substrate processing process technology can be used and applied together easily and does not interfere with existing processes.

[0024]

Third Embodiment Next, a method of magneto-optically recording manufacturing information, manufacturing apparatus control information, or manufacturing result information will be described. This method is preferably used for recording mapping data on the semiconductor substrate based on the result of the probe inspection in the process that does not apply a thermal load, for example, the probe test process in which information is different for each semiconductor substrate. FIG. 9 is a diagram showing a magneto-optical recording method, and FIG. 10 is a sectional view of a semiconductor substrate on which a magnetic recording layer is formed. For the magneto-optical disk device, see "Semicon NE
WS 1989.8 "(published by Marcom International Inc.), page 44, line 30 to page 45, middle column, line 5,
Its basic configuration is described. That is, an optical head is arranged on the lower side of the disk and an electromagnetic coil for generating a magnetic field is arranged on the upper side.・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ ・
... One semiconductor laser is also used for recording, erasing and reproducing. The light output can be directly modulated by changing the driving current of the semiconductor laser. A part of the laser beam emitted from the semiconductor laser is reflected by the beam splitter, and then focused by a focusing lens to have a diameter of about 1 μm or less on the disk.

When the magneto-optical recording technique is used for manufacturing a semiconductor device, a perpendicular magnetization film 23 is formed on a semiconductor substrate 21 as shown in FIG. 9, and manufacturing information and testing information such as VTH are obtained after the semiconductor substrate processing step. Information, DRAM, S
Switching information to a redundant circuit for relieving a defective bit of a storage device such as a RAM, good / defective chips, and category information of defective chips are recorded by a laser beam 32 and an auxiliary magnetic field. The perpendicular magnetization film 23 is made of TbFeCo, GdTbFe, GdDyFeCo.
And the like using a sputtering technique. Since the semiconductor substrate itself has no optical transparency, the laser beam 32 is irradiated from the front surface side of the semiconductor substrate 21, and the auxiliary magnetic field is also generated from the front surface side. At this time, as shown in FIG.
By irradiating the magnetic field direction of the perpendicular magnetization film 23 with a laser beam, the direction of the magnetic domain can be changed and data can be recorded.

The insulating film 3 formed on the semiconductor substrate 21
3 is not only a silicon oxide film formed by thermal oxidation but also a CVD
The insulating film formed in the conventional manufacturing process of the semiconductor integrated circuit, such as the silicon oxide film according to the above, the silicon oxide film into which impurities are introduced, the silicon nitride film, or the polyimide resin film, can be used as it is. Therefore, it is not necessary to provide a new process. Also, as the transparent protective film 34 on the perpendicular magnetization film 23, a silicon oxide film, a tetraoxy base film, a silicon oxide film with impurities introduced, a plasma silicon nitride film, or the like formed by a conventional manufacturing process can be used. it can.

Although the invention made by the present inventor has been specifically described based on the embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. Needless to say. For example,
In the above embodiment, the method of recording the mapping data on the semiconductor substrate by using the magneto-optical recording technology has been described. However, as shown in FIG. 11, for example, the SbTeSe film, the InSeTl film, the GeSb film are used.
It is also possible to use a method of recording data by utilizing the property of changing from a crystalline phase to an amorphous phase or from an amorphous phase to a crystalline phase by irradiating a laser beam 32 like a Te film.

Further, in the above embodiment, the data recording portion such as the digital pit pattern or the magneto-optical film was provided in the peripheral portion of the semiconductor substrate in a circular shape, but as shown in FIG.
The storage area 42 may be partially provided in an arbitrary area such as the peripheral portion of the semiconductor substrate 41. In this case, the tracking scan is a linear scan.

Incidentally, since data compression techniques have been developed in recent years, if the recording / reproducing technique for compressing such data is used, the data is often recorded in a limited area as in the first to third embodiments. It is an effective means that can record the information of.

The operation and effect of the present invention will be described below.

(1) By recording manufacturing information of a semiconductor substrate processing step and manufacturing apparatus control information on a semiconductor substrate and reproducing the information from the semiconductor substrate by a reproducing device which can be linked with the semiconductor substrate processing device, Since the semiconductor device is processed by operating the processing device, the device is directly read from the semiconductor substrate to be processed and individually processed without using an indirect information medium, so that human intervention is not required. Therefore, it is possible to achieve labor saving and automation in the semiconductor substrate processing step without increasing the facility investment amount of FA.

(2) Since the manufacturing information and the manufacturing apparatus control information of the semiconductor substrate processing step are recorded by forming a pit pattern in which the information is digitally encoded on the semiconductor substrate, the photoetching step of the semiconductor substrate is used. Can be recorded easily.

(3) A fine pit pattern can be formed by forming the pit pattern using a photoetching technique. Therefore, a lot of information can be recorded on the semiconductor substrate.

(4) A step of forming a moth-shaped single metal recording film on a semiconductor substrate through an insulating film, and digitally storing manufacturing information, manufacturing apparatus control information, or manufacturing result information on the single metal recording film. The step of recording by irradiating a coded pulse signal laser beam to deform the moth-eye-shaped surface, and the information recorded on the single metal recording film,
A reproducing apparatus that can be interlocked with a semiconductor manufacturing apparatus, includes a step of processing the semiconductor substrate by interlocking the semiconductor manufacturing apparatus by irradiating the recording film with light to reproduce the digital film in real time. By recording in the pit pattern area as needed, strict control and control of the next process becomes possible.

(5) By using a refractory metal for the single metal recording film, it is possible to retain data even during high temperature during heat treatment of the semiconductor substrate.

(6) By using platinum or tungsten for the single metal recording film, it is possible to retain data even at high temperature during the heat treatment of the semiconductor substrate.
Since the reflectance is high, the reproducibility of data can be improved.

(7) A step of forming a recording film on a semiconductor substrate via an insulating film, a step of forming a transparent film on the recording film, a pulse in which manufacturing information and manufacturing device control information are digitally coded on the semiconductor substrate. A step of irradiating a signal light to record it on a recording film, and reproducing the information recorded on the recording film by irradiating the recording film with light by a reproducing device capable of interlocking with the semiconductor manufacturing device. Since the manufacturing apparatus is operated to process the semiconductor substrate, information can be recorded on the semiconductor substrate in a non-contact manner. Therefore, information recording after the semiconductor substrate processing, for example, mapping data based on the measurement result of the electrical characteristics,
It is possible to record directly on the semiconductor substrate.

(8) Since the protective oxide film is made of a silicon oxide film formed by thermal oxidation, a silicon oxide film formed by CVD, a silicon oxide film introduced with impurities, a silicon nitride film, or a polyimide resin, it is manufactured. It can be used as an insulating film for other purposes in the process. Therefore, it is not necessary to newly form a film.

(9) The transparent protective film, the silicon oxide film,
Alternatively, by using a tetraoxy base film, a silicon oxide film into which impurities are introduced, or a plasma silicon nitride film, it can be used as a protective film for a semiconductor chip in the manufacturing process. Therefore, it is not necessary to newly form a film.

[0040]

The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.

That is, the manufacturing information of the semiconductor substrate processing step and the manufacturing device control information are recorded on the semiconductor substrate,
By reproducing the information from the semiconductor substrate by the reproducing device that can be linked with the semiconductor substrate processing device, the semiconductor substrate processing device is linked to automatically process the semiconductor substrate, so that the processing can be performed without using the indirect information medium. In order to read the device directly from the semiconductor substrate to be processed and perform individual processing,
Does not require human intervention. Therefore, the labor saving and automation of the semiconductor substrate processing process can be achieved without increasing the facility investment amount of FA.

[0042]

[Brief description of drawings]

FIG. 1 is a flow chart of a photoetching process step of transferring a mask pattern of an integrated circuit onto a semiconductor substrate of the present invention.

FIG. 2 is a diagram showing a state in which a digital pit pattern is formed on the peripheral portion of the semiconductor substrate 4 of the present invention with manufacturing information of a process to be processed later and manufacturing device control information.

FIG. 3 is an enlarged view of a digital pit pattern provided on a peripheral portion of a semiconductor substrate of the present invention.

FIG. 4 is a diagram showing a method for forming a digital pit pattern on a semiconductor substrate of the present invention.

FIG. 5 is a diagram showing a method for reading a digital pit pattern on a semiconductor substrate of the present invention.

FIG. 6 is a diagram showing another method for forming a digital pit pattern on the semiconductor substrate of the present invention.

FIG. 7 is a diagram showing another method for forming a digital pit pattern on the semiconductor substrate of the present invention.

8A is a diagram showing a data recording method using a two-phase polymer, which is another embodiment of the present invention, and FIG. 8B is a diagram showing a data recording method using a single metal recording film. is there.

FIG. 9 is a diagram showing a magneto-optical recording method according to another embodiment of the present invention.

FIG. 10 is a diagram showing a cross section of a semiconductor substrate having a magnetic recording layer according to another embodiment of the present invention and a data recording method.

FIG. 11 is a diagram showing a data recording method using a phase change of a crystalline phase and an amorphous phase, which is another embodiment of the present invention.

FIG. 12 is a diagram showing an arrangement of recording areas on a semiconductor substrate according to another embodiment of the present invention.

FIG. 13 is a diagram showing an example in which a floppy disk is used as a conventional medium for information necessary for manufacturing.

[Explanation of symbols]

1 ... Semiconductor substrate processing device, 2 ... Pit pattern reproducing device, 3 ... Laser light generating unit, 3a ... Laser light,
4 ... Semiconductor substrate, 4a ... Device pattern, 5 ...
Digital pit pattern, 5a ... Track pitch, 5
b ... Pit, 6 ... First insulating film, 7 ... Photoresist, 8 ... Pulsed light, 9 ... Second insulating film, 10 ... First wiring layer, 11 ... Photoresist, 12 ... …pit,
13 ... Semiconductor substrate, 14 ... Insulating film, 15 ... Two-phase polymer, 15a ... Upper layer, 15b ... Lower layer, 16 ... Laser beam, 17 ... Semiconductor substrate, 18 ... Insulating film, 19 ...
... single metal film, 19a ... recording area, 19b ... protrusion, 2
0 …… laser light, 21 …… substrate, 22 …… track,
23 ... Perpendicular magnetization film, 23a ... Magnetic field direction, 24 ... Recording magnetization domain, 25 ... Optical system head part, 26 ... Photodetector, 27 ... Lens, 28 ... Analyzer, 29 ... Beam Splitter, 30 ... Semiconductor laser, 31 ... Electromagnetic coil, 31a ... Magnetic field, 32 ... Laser light, 33
...... Insulating film, 34 …… Protective film, 35 …… Semiconductor substrate, 3
6 ... Insulating film, 37 ... Crystal phase, 38 ... Amorphous phase, 39 ... Protective film, 40 ... Laser light, 41 ... Semiconductor substrate, 42 ... Recording area, 43 ... Device pattern, 44 ... … Prober, 45 …… Computing device, 46 …… Floppy disk recording device, 47 …… Floppy disk, 48 …… Floppy disk reading device, 49 …… Computing device, 50 …… Pellet bonder, 51 …… Semiconductor substrate

Claims (9)

[Claims] 1. A process of recording manufacturing information, manufacturing device control information, or manufacturing result information of a semiconductor substrate processing process which is digitally coded on a semiconductor substrate, and the information recorded on the semiconductor substrate is used as a semiconductor substrate processing device. And a semiconductor device processing apparatus that processes the semiconductor substrate in association with the semiconductor substrate processing apparatus by recycling the semiconductor substrate processing apparatus with the semiconductor substrate processing apparatus. 2. The manufacturing information of the semiconductor substrate processing step, the manufacturing apparatus control information, or the manufacturing result information is recorded on the semiconductor substrate by forming a digital pit pattern. 1. The semiconductor substrate automatic processing method according to 1. 3. The semiconductor substrate automatic processing method according to claim 2, wherein the pit pattern is formed by using a photoetching technique. 4. A step of forming a moth-shaped single metal recording film on a semiconductor substrate through an insulating film, and manufacturing information, manufacturing apparatus control information, or manufacturing result information is digitally recorded on the single metal recording film. Irradiating with coded pulsed laser light to deform the moth-eye-like surface for recording, and reproducing the information recorded on the single metal recording film in conjunction with a semiconductor manufacturing apparatus. An apparatus for irradiating the recording film with light to reproduce the recording film, thereby interlocking the semiconductor manufacturing apparatus to process the semiconductor substrate. 5. The method for automatically processing a semiconductor substrate according to claim 4, wherein the single metal recording film is made of a refractory metal. 6. The semiconductor substrate automatic processing method according to claim 4, wherein the single metal recording film is made of platinum or tungsten. 7. A step of forming a recording film on a semiconductor substrate via a protective film made of an insulating film, a step of forming a transparent protective film on the recording film, manufacturing information or a manufacturing apparatus control on the semiconductor substrate. The step of irradiating light of a pulse signal in which information or manufacturing result information is digitally coded to record it on the recording film, and the information recorded on the recording film is recorded by the reproducing device which can be linked with a semiconductor manufacturing device. And a step of interlocking the semiconductor manufacturing apparatus by irradiating the film with light to regenerate the film to process the semiconductor substrate. 8. The protective film made of the insulating film is a silicon oxide film formed by thermal oxidation or a silicon oxide film formed by CVD.
8. The semiconductor substrate automatic processing method according to claim 7, which is made of a silicon oxide film having impurities introduced therein, a silicon nitride film, or a polyimide resin. 9. The transparent protective film is made of a silicon oxide film, a tetraoxy base film, an impurity-introduced silicon oxide film, or a plasma silicon nitride film. Semiconductor substrate automatic processing method.