JPH08130176A - Manufacture of mask for charged particle beam exposure - Google Patents

Abstract

PURPOSE: To manufacture a mask for charged particle beam exposure which is free from defects with a high yield and at a low cost in a relatively simple manufacturing process. CONSTITUTION: Recessed patterns 31a which are to be through-patterns are formed in the surface of an Si substrate 1a to obtain a substrate 1b having recessed patterns. The rear of a thin film forming region including the recessed patterns 31a is subjected to etching until the bottom parts of the recessed patterns 31a are etched to form a thin film part 3 having through-patterns 31 in its surface. When the thin film part 3 is formed, fluorine resin protective films 6 are formed on the surface of a substrate 1b, in the recessed patterns 31a and the side surfaces of the substrate 1b. With this constitution, a mask 1 for charged particle beam exposure which has the through-patterns 31 through which the charged particle beam can be transmitted in its thin film part 3 which is supported by a support frame 2 can be obtained.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle beam exposure mask for producing a charged particle beam exposure mask used as a so-called partial batch type electron beam exposure mask in a semiconductor integrated circuit manufacturing process or the like. It relates to a manufacturing method.

[0002]

2. Description of the Related Art The demand for higher integration of semiconductor integrated circuits has been accelerating in recent years, and further miniaturization of fine pattern exposure has become an urgent task.

At present, the mainstream of fine pattern exposure is a photolithography method using light, but this photolithography method has a theoretical limit depending on the wavelength of light. Therefore, in recent years, various practical studies have been made on the practical use of a method using an X-ray having a higher resolution in principle than light, or a charged particle beam such as an electron beam or an ion beam.

Among these, for electron beam exposure using an electron beam, a so-called one-stroke writing exposure method has been conventionally put into practical use, but this method requires a considerable time for exposure (low throughput). Therefore, it cannot be used in a process that requires rapid exposure in order to rapidly manufacture a large amount of products.
For this reason, recently, for example, various elemental patterns repeatedly appearing in an exposure pattern can be exposed by a transfer method using a mask, and a desired pattern can be exposed by combining these various elemental pattern transfers. There has been proposed a so-called partial batch exposure (sometimes referred to as block exposure or cell projection exposure) method that can be performed quickly. The mask used in this method is usually one in which a large number of mutually different elemental patterns are formed on one mask, and the exposure using this mask is such that when the transfer of one elemental pattern is completed, The next elemental pattern transfer is performed by deflecting the electron beam, moving the mask, or both.

A charged particle beam exposure mask used for charged particle beam exposure such as the above-mentioned partial batch exposure method using an electron beam generally passes a charged particle beam through a thin film portion supported by a support frame portion. The through pattern is formed. That is, since there is no substance that allows the charged particle beam to pass satisfactorily, no substance can exist in the part that allows the charged particle beam to pass therethrough. Therefore, this part must be penetrated. Also,
If this penetrating pattern is formed on a thick plate or the like, the passing electron beam is affected by the side wall of the penetrating pattern and accurate transfer cannot be performed, so the penetrating pattern must be formed in a thin film. Further, in order to support the thin film while maintaining the plane accuracy, a supporting frame portion having a predetermined strength is required.

As a conventional mask for charged particle beam exposure,
For example, there are reported examples of a method of forming a through pattern by electrical discharge machining on an SOI (Silicon on Insulater) substrate and a method of using a photosensitive glass. However, these methods are not sufficient in consideration of durability in exposure and processing accuracy. Therefore, recently, a thin film has been attached to the front surface of the substrate, and the support frame portion and the thin film portion are formed by wet etching the substrate so that the support frame portion and the attached thin film remain from the back surface of the substrate, On the other hand, attention has been paid to a method in which the through pattern formed in the thin film portion is formed by dry etching before or after the wet etching for forming the thin film portion. Among these methods, the specific procedure of the method of forming the through pattern after forming the thin film portion is as follows.

First, a thin Si plate is attached to a surface of a Si substrate such as a Si wafer having a thickness of about 500 μm by sandwiching a SiO 2 layer having a thickness of about 1 μm, and the thin Si plate is polished to form a thin film having a thickness of about 20 μm. Then, an SOI substrate is manufactured.
Then, a silicon nitride film of Si3 N4 or the like having resistance to wet etching of Si is formed on the entire surface of the SOI substrate. Next, the silicon nitride film on the back surface of the substrate is subjected to patterning by dry etching to remove the portion to be the thin film portion while leaving the portion to be the support frame portion. Next, the patterned silicon nitride film is used as a mask, and a portion of the substrate to be the supporting frame portion is left by wet etching, and a region of the thin film portion is eroded and removed from the back surface of the substrate. As a result, a support frame portion supporting the laminated thin film is obtained. Next, the silicon nitride film is removed by some kind of wet etching or dry etching. Then, a through pattern is formed on the thin film portion by dry etching. The film used as a mask for forming the penetrating pattern may be formed in advance before forming the silicon nitride film, or may be formed after forming the support frame portion and the thin film portion. (For details, refer to, for example, JP-A-6-130655).

[0008]

By the way, in the above-mentioned conventional method for manufacturing a mask for charged particle beam exposure, a mask used for etching only the thin film forming region during etching in the step of forming the thin film portion. When,
The protective film formed to protect the other parts except the part to be removed by the etching from the damage due to the etching are both composed of a Si3 N4 film. This has sufficient resistance to wet etching for forming a thin film, at the same time enables accurate pattern formation, and is relatively easily formed on the entire surface of the substrate by a CVD method (chemical vapor deposition method) or the like. This is because it has been considered that the thin film satisfying the above condition is limited to the inorganic film such as the Si3 N4 film.

However, for example, this Si3 N4 film is
The temperature of the substrate needs to be heated to 300 ° C. or higher at the time of its formation, and in order to remove this after use, 1
It is not always easy to handle, for example, hot phosphoric acid heated to 50 ° C. or higher must be used. Moreover, when the substrate is heated to a high temperature of 300 ° C. or higher, other parts are likely to be adversely affected such as thermal stress.
Further, when removing this after use, hot phosphoric acid heated to 150 ° C. may damage the thin film portion formed before that. Therefore, in order to prevent such a fear, it is necessary to strictly control the processing conditions or to add another process, which inevitably complicates the process and increases the manufacturing cost. At the same time as raising the yield, there is a limit to the yield improvement.

The present invention has been made on the basis of the above background, and a charged particle beam exposure mask capable of producing a defect-free charged particle beam exposure mask with a relatively high yield at a low yield can be produced. It is an object of the present invention to provide a mask manufacturing method for a mask.

[0011]

In order to solve the above-mentioned problems, a method for manufacturing a mask for charged particle beam exposure according to the present invention comprises (Structure 1): a charged particle beam is applied to a thin film portion supported by a support frame portion. A charged particle beam exposure mask manufacturing method for manufacturing a charged particle beam exposure mask having a penetrating pattern to be passed therethrough, wherein one surface side of a thin film forming area excluding a supporting frame forming area of a material substrate to the other surface side A thin film portion forming step including a process of forming a thin film portion on the other surface side by etching toward a thin film, and a through pattern forming step of forming a pattern to be a through pattern in the thin film portion forming region by a pattern forming method including etching. In the method for manufacturing a mask for charged particle beam exposure, which comprises a step, in etching in the thin film portion forming step, other portions except a portion to be removed by the etching are formed. The protective film formed to protect from damage due to the etching is made of a resin material.
As a mode of (Structure 2), in the charged particle beam exposure mask manufacturing method according to Structure 1, the etching in the thin film portion forming step is wet etching. (Structure 3) In the charged particle beam exposure mask manufacturing method of Structure 1 or 2, the etching in the penetrating pattern forming step is a dry etching, and any one of Structures 1 to 3 (Structure 4) In the charged particle beam exposure mask manufacturing method of any one of Structures 1 to 3, the resin material forming the protective film is a fluorine resin, an ethylene resin, a propylene resin, a silicon resin, The composition is characterized by containing one or more of any one of a butadiene resin and a styrene resin.

[0012]

According to the above structure, during the etching in the thin film portion forming step, the protective film formed for protecting the other portion except the portion removed by the etching from the damage due to the etching is formed by the resin material. With this configuration, the steps of forming these films and removing them after use can be performed at a relatively low temperature. Therefore, the risk of heat stress or damage to other parts in these steps can be significantly reduced. Further, since the protective film is made of resin, even if the protective film is formed after forming the pattern for forming the through pattern, it is easy to completely form the protective film even inside the concave portion of the pattern. Since it is possible, it is possible to completely protect the etching solution against erosion. Therefore, the degree of freedom in selecting the manufacturing process can be widened, and the removal can be easily and completely performed with an organic solvent. it can. This makes it possible to manufacture the charged particle beam exposure mask stably with high yield and at low cost.

[0013]

【Example】

(Embodiment 1) FIG. 1 is a process explanatory view of a charged particle beam exposure mask manufacturing method according to Embodiment 1 of the present invention. Hereinafter, the method for manufacturing a mask for charged particle beam exposure according to the first embodiment will be described with reference to FIG. Note that, as described above, this type of charged particle beam exposure mask is actually a different element from each other if the mask in which the elemental pattern is formed on the thin film portion supported by the support frame is a unit mask. It is common to use a large number of unit masks having a target pattern formed on a large Si substrate as one mask. However, in order to simplify the description, in each of the following embodiments, only the unit mask is used. Take up and explain. In addition, Example 1 is for charged particle beam exposure in which the support frame portion and the thin film portion are formed by removing a part of the substrate, and are both integrally formed of a part of the substrate. It is an example of manufacturing a mask.

SiO 2 films 4a and 4b having a thickness of 2 μm, which are used as a mask for dry etching described later, are formed on both surfaces of a substrate 1a made of a silicon wafer having a thickness of about 500 μm by a sputtering method (FIG. 1 (A)).
reference). The reason why the SiO2 film 4b is formed on the back surface is to prevent the warp of the substrate 1a when it is formed on only one surface.

Next, a photoresist is formed on the SiO2 film 2a on the surface of the substrate 1a, and a through pattern 31 to be described later is formed.
A resist pattern (not shown) is formed by exposing and developing a pattern for forming (see FIG. 1 (G)), and then the SiO2 film 4a is dry-etched by using this resist pattern as a mask to penetrate. Patterned S on which a pattern 41 serving as a mask for forming the pattern 31 is formed
An iO2 film 4 is obtained (see FIG. 1 (B)).

Next, the patterned SiO2 film 4 is used as a mask to form a concave pattern 31a, which will later become a through pattern 31, on the Si substrate 1a by dry etching by the parallel plate RIE method (this processing is a trench processing. The substrate 1b having a concave pattern is obtained (FIG. 1).
(See (C)).

Next, the patterned SiO2 film 4 and the SiO2 film 4b on the rear surface of the substrate are removed by buffered hydrofluoric acid, and then the rear surface of the concave patterned substrate 1b is subjected to room temperature sputtering to form a metal having a film thickness of 3000 angstroms. A titanium film 5a is formed (see FIG. 1D). As will be described later, the metal titanium film 5a is a film for forming a mask when the substrate 1b is etched from the back surface to form the thin film portion 3 (see FIG. 1G).

Next, a photoresist is formed on the metallic titanium film 5a, and a resist pattern (not shown) is formed by exposing and developing a pattern for forming the thin film portion 3.
Next, using the resist pattern as a mask, the metallic titanium film 5a is etched with a 2% dilute fluorinated nitric acid aqueous solution to form a patterned metallic titanium film 5 having a pattern 51 serving as a mask for forming the thin film portion 3. obtain. Next, a fluororesin is applied to the surface of the substrate with concave pattern 1b, the inside of the concave pattern 31a, and the side surface of the substrate 1b by a spin coating method, and cured at 150 ° C. to form the fluororesin protective film 6 (see FIG. See E)). The fluororesin protective film 6 is for protecting the substrate 1b from the etching liquid used in the etching process for forming the thin film portion 3.

Next, the concave patterned substrate 1 on which the patterned metallic titanium film 5 and the fluororesin protective film 6 are formed
b, using the patterned metal titanium film 5 as a mask,
Etching is performed using a KOH aqueous solution heated to 100 ° C. This etching is performed until the region in the pattern 51 formed by removing the titanium metal film on the back surface of the concave patterned substrate 1b penetrates the bottom surface of the concave pattern 31a (FIG. 1 (F )).

Next, the fluororesin protective film 6 is removed with an organic solvent, and the patterned metallic titanium film 5 is removed with a dilute aqueous solution of fluorinated nitric acid, so that a supporting frame as shown in FIG. The charged particle beam exposure mask 1 in which the penetrating pattern 31 is formed on the thin film portion 3 supported by the portion 2 is obtained.

As shown in FIG. 1 (H), a film thickness of 1.5 is formed on the surfaces of the holding frame 2 and the thin film portion 3 as needed.
You may make it form the electrically conductive film 5 which consists of tungsten etc. of about μm. According to this, charging of the mask surface by charged particles can be reduced. In this case, a diffusion reaction may occur between the conductive film and the Si film at the time of exposure, and at that time, a titanium layer or a titanium tungsten layer may be provided as a barrier layer between them.

According to the method for manufacturing the mask for charged particle beam exposure of Example 1 described above, the fluororesin protective film 6 is used as a protective film for protecting other portions during etching for forming the thin film portion 3. ing. Therefore, first, the steps of forming these films and removing them after use can be performed at a relatively low temperature. Therefore, the risk of heat stress or damage to other parts in these steps can be significantly reduced. Also,
Since the protective film is made of a fluororesin, it is possible to easily form a complete protective film even inside the concave pattern 31b. Therefore, it is possible to completely protect the etching solution against erosion. The removal can be carried out easily and completely with an organic solvent.

Further, in the manufacturing method of the first embodiment, the support frame portion 2 and the thin film portion 3 are formed by removing a part of the Si substrate 1a, and both are formed from a part of the Si substrate 1a. Since it is made into an integral one, there is a possibility that the thin film formed by sticking may peel off during manufacturing or use as compared with the thin film formed by sticking on the substrate. Etc., and the risk of wrinkling can be significantly reduced. Moreover, since it is not necessary to fabricate an SOI substrate or the like, there is also an advantage that the manufacturing process can be remarkably simplified.

As described above, according to the method for manufacturing the charged particle beam exposure mask of the first embodiment, the number of manufacturing steps itself is small, and the relatively high cost thin film forming step and dry etching step are reduced, resulting in low cost. Because of the use of costly wet etching process and resin coating process, each process is stable and reliable and less likely to occur, heat treatment can be performed on other parts because of low processing temperature. Since the risk of stress and damage is small,
This makes it possible to manufacture a charged particle beam exposure mask with a simple structure and high durability, with a high yield, in a stable manner, and at a low cost.

(Embodiment 2) FIG. 2 is a process explanatory diagram of a charged particle beam exposure mask manufacturing method according to Embodiment 2 of the present invention. Hereinafter, the method for manufacturing a mask for charged particle beam exposure according to the second embodiment will be described with reference to FIG. In addition, this Example 2
Is an example in which a thin film is adhered to the front surface of the substrate, and the supporting frame portion and the thin film portion are formed by wet etching the substrate so that the supporting frame portion and the adhered thin film remain from the rear surface of the substrate. However, since the basic configuration is common to that of the above-described first embodiment, the portions that basically perform the same function will be denoted by the same reference numerals.

First, the first SiO 2 having a thickness of about 1 μm is formed on the surface of a Si substrate 1a such as a Si wafer having a thickness of about 500 μm.
2 The film 7a is formed by the thermal oxidation method, and then the first SiO 2 film is formed.
2 A thin (about 30 μm thick) Si plate is pasted across the film 7a, and this thin Si plate is polished to form a thin film Si film 8a with a thickness of about 15 μm.
A so-called SOI substrate is produced in which the Si film 8a is sandwiched between the O2 film 7a. Next, S of this SOI substrate
On the i film 8a, a second SiO2 film 4a having a thickness of 2 .mu.m to be used as a mask for dry etching which will be described later is formed by the plasma CVD method (see FIG. 2A).

Then, a metal chrome film having a thickness of 3000 angstrom is formed on the back surface of the Si substrate 1a by a room temperature sputtering method (not shown), a photoresist is formed on the metal chrome film, and the thin film portion 3 is formed. The pattern for forming (see FIG. 2 (G)) is exposed and developed to form a resist pattern (not shown). Etching is performed using an aqueous solution of cerium ammonium nitrate / perchloric acid to obtain a patterned metallic chromium film 5 having a pattern 51 serving as a mask for forming the thin film portion 3 (see FIG. 2 (B)).

Next, the surface and side surfaces of the substrate 1a are coated with an ethylene-propylene resin by spin coating, and the temperature is 150 ° C.
And is cured to form an ethylene-propylene resin protective film 6 having a thickness of about 300 μm (see FIG. 2 (C)). The ethylene-propylene resin protective film 6 is for protecting the substrate 1a and the thin films formed thereon from the etching solution used in the etching process for forming the thin film portion 3.

Next, the substrate 1a on which the patterned metallic chromium film 5 and the ethylene-propylene resin protective film 6 are formed is covered with the patterned metallic chromium film 5 as a mask, and IPA (2-propanol) is 10%. K added
Etching is performed using an etching solution obtained by heating an OH aqueous solution to 70 ° C. This etching is performed until the region in the pattern 51 penetrates the back surface of the first SiO2 film 7a formed on the front surface of the substrate 1a (FIG. 2 (D)).
reference).

Next, the ethylene-propylene resin protective film 6 is removed with an organic solvent, and the patterned metallic chromium film 5 is removed with an aqueous solution of cerium nitrate ammonium perchloric acid, which is exposed. The second S
A photoresist (not shown) is formed on the iO2 film 4a, a pattern for forming the through pattern 31 is exposed and developed to form a resist pattern (not shown), and then this resist pattern is formed. A pattern 41 serving as a mask for forming the penetrating pattern 31 by dry etching the second SiO2 film 4a using the mask as a mask.
A patterned SiO2 film 4 on which is formed is obtained (FIG. 2 (E)).
reference).

Next, with the patterned SiO 2 film 4 as a mask, the patterned S with the pattern 81 serving as a mask for forming the through pattern 31 on the Si film 8a by the dry etching method by the magnetron RIF is formed.
The i film 8 is obtained (see FIG. 2 (F)).

Next, the exposed portions of the patterned SiO2 film 4 and the first SiO2 film 7a are removed by buffered hydrofluoric acid, and the thin film portion 3 supported by the support frame portion 2 is removed.
A charged particle beam exposure mask 1 having a penetrating pattern 31 formed therein is obtained (see FIG. 2G).

In the second embodiment, the thin film portion is formed by the thin film attached to the surface of the substrate, and therefore, there are disadvantages such as a slight increase in the number of steps as compared with the first embodiment. As in the case, it is not necessary to form the resin protective film up to the inside of the concave pattern, so that there is an advantage that the formation is easy.

(Embodiment 3) FIG. 3 is a process explanatory view of a charged particle beam exposure mask manufacturing method according to Embodiment 3 of the present invention. Hereinafter, the method of manufacturing a mask for charged particle beam exposure according to the third embodiment will be described with reference to FIG. In addition, this Example 3
The second embodiment is the same as the second embodiment except that the order of the steps is different from that of the second embodiment in that a pattern for forming a through pattern is formed before forming the resin protective film, and thus the same function is achieved. The same reference numerals are given to the parts for description.

First, the first SiO 2 having a thickness of about 2 μm is formed on the surface of the Si substrate 1a such as a Si wafer having a thickness of about 500 μm.
2 film 7a is formed by the low pressure CVD method, and then the first S
A thin (about 30 μm thick) Si plate is attached by sandwiching the io2 film 7a, and this thin Si plate is polished to a thickness of 10 μm.
A thin Si film 8a having a thickness of about 4 mm, and the Si film 8a is attached on the Si substrate 1a with the SiO2 film 7a interposed therebetween.
A so-called SOI substrate is manufactured. Then, on the Si film 8a of the SOI substrate, a second SiO2 film 4a having a thickness of 1.5 .mu.m used as a mask for dry etching which will be described later.
Are formed by the SOG spin coating method (see FIG. 3 (A)).

Next, a 3000 Å thick tungsten film (not shown) is formed on the back surface of the Si substrate 1a by a room temperature sputtering method, a photoresist is formed on the tungsten film, and the thin film portion 3 (see FIG. 2 (G)) to expose and develop a pattern to form a resist pattern (not shown). Then, using the resist pattern as a mask, the tungsten film is
Etching with a caustic soda / red blood salt [(K3Fe (CN6)]] mixed aqueous solution gives a patterned tungsten film 5 having a pattern 51 serving as a mask for forming the thin film portion 3 (see FIG. 3 (B)). .

Next, a photoresist is formed on the second SiO 2 film 4a (not shown), and a pattern for forming the through pattern 31 is exposed and developed to form a resist pattern (not shown). Then, using the resist pattern as a mask, the second SiO2 film 4a is RIEed.
Dry etching is performed to obtain a patterned SiO2 film 4 having a pattern 41 serving as a mask for forming the penetrating pattern 31 (see FIG. 2C).

Next, the Si film 8a is dry-etched by ECR-RIE using the patterned SiO2 film 4 as a mask to form a patterned Si film having a pattern 81 serving as a mask for forming the penetrating pattern 31. 8
Is obtained (see FIG. 2 (D)).

Next, a silicon resin is applied by a screen printing method to the surface of the substrate 1a on which the patterned Si film 8 and the patterned SiO2 film 4 are formed, the inside of the patterns 41 and 81, and the side surface of the substrate 1a, and the temperature is 100 ° C. Then, the silicon resin protective film 6 having a film thickness of about 200 μm is formed by curing (see FIG. 2E). The silicon resin protective film 6 is for protecting the substrate 1a and the thin films formed thereon from the etching liquid used in the etching process for forming the thin film portion 3.

Next, on the substrate 1a on which the patterned tungsten film 5 and the silicon resin protective film 6 are formed, the patterned tungsten film 5 is used as a mask and NaOH is used.
Etching is performed using an etching solution obtained by heating the aqueous solution to 90 ° C. In this etching, the area within the pattern 51 is the first SiO2 film 7a formed on the surface of the substrate 1a.
Repeat until it penetrates the back surface of the (see Figure 2 (F)).

Next, the silicon resin protective film 6 is removed by an organic solvent, and the patterned tungsten film 5 is removed by etching the above caustic soda / red blood salt mixed aqueous solution. Next, the patterned SiO2 film is removed. 4 and the portion of the first SiO2 film 7a exposed to the outside are removed by buffered hydrofluoric acid, and a through pattern 31 is formed in the thin film portion 3 supported by the support frame portion 2 for charged particle beam exposure Mask 1
Is obtained (see FIG. 2 (G)).

In the third embodiment, since the pattern formation for forming the penetrating pattern is performed before the thin film portion is formed, the possibility of adversely affecting the thin film portion previously formed by the pattern formation is reduced. It has the advantage of being able to

In each of the above examples, as the material of the protective film for protecting the substrate and the like from the etching solution used in the etching process for forming the thin film portion, fluororesin, ethylene-propylene resin and Although an example using a silicone resin is given, as the material for forming this film, any of other fluorine resin, ethylene resin, propylene resin, other silicon resin, butadiene resin or styrene resin is used. It may include one or two or more.

As an example of a film material for forming a thin film portion by etching the substrate from the back surface, metal titanium, chromium and tungsten are used. In addition to these, a compound containing them, or a material containing one or more of zirconium or nickel as a main component may be used, and other inorganic materials may be used.

[0045]

As described above in detail, according to the charged particle beam exposure mask manufacturing method of the present invention, during etching in the thin film portion forming step, other portions except the portion removed by the etching are removed. Since the protective film formed to protect the film from damage due to the etching is made of a resin material, the steps of forming these films and removing them after use can be performed at a relatively low temperature. Therefore, the risk of heat stress or damage to other parts in these steps can be significantly reduced. Further, since the protective film is made of resin, even if the protective film is formed after forming the pattern for forming the through pattern, it is easy to completely form the protective film even inside the concave portion of the pattern. Since it is possible, it is possible to completely protect the etching solution against erosion. Therefore, the degree of freedom in the selection of the manufacturing process can be widened, and its removal can be easily and completely performed with an organic solvent. it can. This makes it possible to manufacture the charged particle beam exposure mask stably with high yield and at low cost.

[Brief description of drawings]

FIG. 1 is a process explanatory diagram of a method for manufacturing a charged particle beam exposure mask according to a first embodiment of the present invention.

FIG. 2 is a process explanatory view of the method for manufacturing a charged particle beam exposure mask according to the second embodiment of the present invention.

FIG. 3 is a process explanatory diagram of a method for manufacturing a charged particle beam exposure mask according to a third embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Mask for charged particle beam exposure, 2 ... Support frame part, 3 ... Thin film part, 31 ... Penetration pattern.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Office reference number FI Technical indication location H01L 21/3065 21/306 21/318 C H01L 21/30 541 P 21/302 C 21/306 A

Claims (4)

[Claims] 1. A charged particle beam exposure mask manufacturing method for manufacturing a charged particle beam exposure mask having a penetrating pattern for passing a charged particle beam through a thin film portion supported by a support frame portion, the method comprising: supporting on a material substrate. A thin film part forming step including a process of forming a thin film part on the other surface side by performing etching from one surface side of the thin film part forming area excluding the frame part forming area toward the other surface side; In a charged particle beam exposure mask manufacturing method comprising a through pattern forming step of forming a pattern to be a through pattern in a formation region by a pattern forming method including etching, in the etching in the thin film portion forming step, by the etching, A protective film formed to protect other portions except the portion to be removed from damage due to the etching, is formed of a resin material. Particle beam exposure mask manufacturing method. 2. The method for manufacturing a charged particle beam exposure mask according to claim 1, wherein the etching in the thin film portion forming step is wet etching. 3. The method for manufacturing a charged particle beam exposure mask according to claim 1, wherein the etching in the penetrating pattern forming step is dry etching. 4. The charged particle beam exposure mask manufacturing method according to claim 1, wherein the resin material forming the protective film is a fluorine resin, an ethylene resin, a propylene resin, or a silicon resin. A charged particle beam exposure mask manufacturing method comprising any one or more of a resin, a butadiene resin and a styrene resin.