JPH08109500A - Fine working of silicon - Google Patents
Fine working of siliconInfo
- Publication number
- JPH08109500A JPH08109500A JP25913595A JP25913595A JPH08109500A JP H08109500 A JPH08109500 A JP H08109500A JP 25913595 A JP25913595 A JP 25913595A JP 25913595 A JP25913595 A JP 25913595A JP H08109500 A JPH08109500 A JP H08109500A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- region
- acid
- etchant
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 38
- 239000010703 silicon Substances 0.000 title claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 17
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 claims abstract description 10
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000001590 oxidative effect Effects 0.000 claims abstract description 10
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002253 acid Substances 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims abstract description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 10
- 239000007800 oxidant agent Substances 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 239000008151 electrolyte solution Substances 0.000 claims 1
- 239000003792 electrolyte Substances 0.000 abstract description 4
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000005459 micromachining Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000010349 cathodic reaction Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
Abstract
Description
【０００１】[0001]
【本発明の分野】本発明は微細加工法、より具体的に
は、選択エッチングによるシリコンの微細加工法に係
る。FIELD OF THE INVENTION The present invention relates to a microfabrication method, and more particularly to a method for microfabrication silicon by selective etching.
【０００２】[0002]
【関連技術の記述】微細加工とういのは、通常数ミクロ
ンオーダーの寸法の非常に小さい機械的構造を作製する
ことを、さす。微細加工された構造の用途には、たとえ
ば歪ゲージ及び液体流に対するごく小さなチャネルを有
するインクジェット印刷ヘッドが含まれる。典型的な場
合、シリコンが作製材料として、用いられる。2. Description of Related Art Microfabrication refers to the production of very small mechanical structures, usually on the order of a few microns. Applications for microfabricated structures include, for example, strain gauges and inkjet printheads with tiny channels for liquid flow. Silicon is typically used as the fabrication material.
【０００３】シリコンを微細加工する１つの方法は、水
酸化カリウム（ＫＯＨ）又は同様の型のアルカリ溶液を
用いた湿式エッチ法である。しかし、この方法は結晶シ
リコンの｛１００｝及び｛１１１｝面でのエッチ速度の
異方性により、制限されている。アルカリエッチングは
結晶面により、制限されている。One method of micromachining silicon is the wet etch method using potassium hydroxide (KOH) or similar type alkaline solutions. However, this method is limited by the anisotropy of the etch rate on the {100} and {111} planes of crystalline silicon. Alkaline etching is limited by the crystal planes.
【０００４】米国特許第４，９９５，９５４号は水溶性
フッ化水素酸電解液を含む電気化学セル中のシリコン
に、電圧を印加することによるシリコンの湿式エッチン
グの別の方法を、明らかにしている。明らかにされてい
るプロセスにより、シリコン中に多孔質領域が生成し、
それはその後アルカリ槽中で溶解する。US Pat. No. 4,995,954 discloses another method of wet etching silicon by applying a voltage to the silicon in an electrochemical cell containing an aqueous hydrofluoric acid electrolyte. There is. The disclosed process creates a porous region in the silicon,
It then dissolves in the alkaline bath.
【０００５】シリコンを微細加工する別の方法は、シリ
コン中に精密なプロフィルをエッチするために、プラズ
マを用いるドライエッチングである。Another method of micromachining silicon is dry etching, which uses a plasma to etch a precise profile in the silicon.
【０００６】[0006]
【本発明の要約】シリコンはパターン形成されたドーピ
ングを用いることにより、微細加工できることを、発見
した。具体的には、本発明の方法は、シリコンのｎ−ド
ープ及びｐ−ドープ領域間で、エッチングに対する抵抗
が、相対的に異なることに基く。従って、ここで述べる
シリコンの微細加工法は、シリコンの表面中に異ってド
ープされた領域のパターンを形成することを含み、前記
領域の少くとも１つは、陰性であるもう１つの前記領域
に対して陽性で、酸で酸化性のエッチング剤で、表面を
エッチングすることを含む。陽性領域は選択的にｐ−ド
ープにし、陰性領域は選択的にｎ−ドープにする。ドー
ピングは標準的なフォトリソグラフィ技術を用いて、行
われる。酸はクロム酸とフッ化水素酸の混合物が好まし
い。SUMMARY OF THE INVENTION It has been discovered that silicon can be microfabricated by using patterned doping. Specifically, the method of the present invention is based on the relatively different resistance to etching between n-doped and p-doped regions of silicon. Accordingly, the methods of micromachining silicon described herein include forming a pattern of differentially doped regions in the surface of silicon, at least one of the regions being another negative region. And etching the surface with an acid-oxidizing etchant. The positive region is selectively p-doped and the negative region is selectively n-doped. Doping is done using standard photolithographic techniques. The acid is preferably a mixture of chromic acid and hydrofluoric acid.
【０００７】[0007]
【好ましい実施例の詳細な記述】本発明の方法は、異な
る速度でエッチングされるシリコン上の領域を生成させ
るために、選択ドーピングを用いる。ドーピング領域を
適切にパターン形成することにより、簡単な化学エッチ
ングにより、シリコンは微細加工できる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The method of the present invention uses selective doping to produce regions on silicon that are etched at different rates. With proper patterning of the doped regions, the silicon can be microfabricated by simple chemical etching.
【０００８】図１を参照すると、シリコン基体１００が
用意されており、それはｐ−ドープされた並んだ領域１
０２と、ｎ−ドープである整形された領域１０３を有す
る結晶シリコンの基板１０１を含む。シリコン基体は単
結晶シリコンのウエハ又はたとえば化学気相堆積により
堆積させた多結晶シリコンでよい。当業者にはよく知ら
れた標準的な技術（たとえば、フォトリソグラフィ及び
イオン注入）を用いることにより、パターン形成によっ
て、異なって高濃度ドープされた領域が、生成する。ド
ーピングレベルは、１０18／ｃｃを越える電子密度が得
られるようなものが、好ましい。ｎ−領域用にはリン、
ｐ−領域用にはホウ素といった標準的なドーパントを使
用してよい。具体的には、微細加工される構造の所望の
形は、ｎ−ドーピングでパターン形成される。エッチン
グ除去される領域は、ｐ−ドーピングされる。Referring to FIG. 1, a silicon substrate 100 is provided, which is a p-doped side-by-side region 1.
02, and a substrate 101 of crystalline silicon having a shaped region 103 that is n-doped. The silicon substrate may be a wafer of single crystal silicon or polycrystalline silicon deposited, for example by chemical vapor deposition. By using standard techniques well known to those skilled in the art (eg, photolithography and ion implantation), patterning produces differentially heavily doped regions. The doping level is preferably such that an electron density exceeding 10 18 / cc can be obtained. phosphorus for the n-region,
Standard dopants such as boron may be used for the p-region. Specifically, the desired shape of the microfabricated structure is patterned with n-doping. The regions to be etched off are p-doped.
【０００９】次に、ウエハは酸化エッチャント中に浸す
ことにより、選択的にエッチングされる。好ましい酸化
エッチャントは、クロム酸及びフッ化水素酸の水溶液で
ある。好ましい組成は、１．２Ｍクロム酸と４９重量パ
ーセントフッ化水素酸の１：１混合物である。クロム酸
とフッ化水素酸の他の濃度も、効果的に使用できる。た
とえば、フッ化水素酸に対するクロム酸の比率は、約
０．５：１．５ないし約１．５：０．５の範囲にでき
る。クロム酸の濃度は、約０．５Ｍないし約１．５Ｍの
範囲としうる。フッ化水素酸濃度は、約３０重量パーセ
ントないし約６０重量パーセントの範囲にできる。更
に、硝酸及び過酸化水素のような他の酸化剤を、クロム
酸に置きかえることができる。エッチャント溶液の温度
及びエッチング継続時間は、所望のエッチング度が得ら
れるよう、調整できる。The wafer is then selectively etched by immersion in an oxidizing etchant. The preferred oxidizing etchant is an aqueous solution of chromic acid and hydrofluoric acid. The preferred composition is a 1: 1 mixture of 1.2M chromic acid and 49 weight percent hydrofluoric acid. Other concentrations of chromic acid and hydrofluoric acid can be used effectively. For example, the ratio of chromic acid to hydrofluoric acid can range from about 0.5: 1.5 to about 1.5: 0.5. The concentration of chromic acid can range from about 0.5M to about 1.5M. The hydrofluoric acid concentration can range from about 30 weight percent to about 60 weight percent. In addition, other oxidants such as nitric acid and hydrogen peroxide can replace chromic acid. The temperature of the etchant solution and the etching duration can be adjusted so as to obtain a desired degree of etching.
【００１０】酸化電解液の存在により、ｐ−ドープ及び
ｎ−ドープ領域間に、内部バイアスが誘発される。ｐ−
ドープ領域はｎ−ドープ領域に、電子を供給する。従っ
て、ｐ−ドープ領域は陽性にバイアスされ、一方ｎ−ド
ープ領域は陰性にバイアスされる。外部電源から電圧を
印加することによる外部バイアスの必要はない。陽性の
ｐ−ドープ領域は、選択的にエッチングされる。The presence of the oxidizing electrolyte induces an internal bias between the p-doped and n-doped regions. p-
The doped region supplies electrons to the n-doped region. Therefore, the p-doped region is positively biased, while the n-doped region is negatively biased. There is no need for external bias by applying voltage from an external power supply. The positive p-doped regions are selectively etched.
【００１１】本発明が実現される化学的又は電気的な機
構の何らかの特定の理論に限定されることは望まない
が、陰極反応は、以下のようであると、示唆される。 Cr2O7 - ＋ 6e- ＋ 14H → 2Cr+3 ＋ 7H2O （１） 陽極反応は、以下のようである。 2H2O ＋ Si → SiO2 ＋ 2H2 （２） SiO2 ＋ 6HF → H2SiF6 ＋ 2H2O （３）While not wishing to be limited to any particular theory of the chemical or electrical mechanism by which the invention is realized, it is suggested that the cathodic reaction is as follows. Cr 2 O 7 - + 6e - + 14H → 2Cr +3 + 7H 2 O (1) anode reaction is as follows. 2H 2 O + Si → SiO 2 + 2H 2 (2) SiO 2 + 6HF → H 2 SiF 6 + 2H 2 O (3)
【００１２】電子がｐ−ドープ領域から引き抜かれるに
つれ、シリコン原子の構造中に反応性の高い位置が生
じ、それによってシリコンと電解液間に反応が起ると、
信じられる。As electrons are withdrawn from the p-doped region, highly reactive sites are created in the structure of the silicon atom, which causes a reaction between silicon and the electrolyte.
Believable.
【００１３】図２はエッチング後得られる構造を示す。
ｐ−ドープ領域１０３は支持台としての基板１０１上に
残る。ｎ−ドープ領域はエッチング除去されている。FIG. 2 shows the structure obtained after etching.
The p-doped region 103 remains on the substrate 101 as a support. The n-doped region has been etched away.
【００１４】ある程度の結晶面選択性は存在するが、本
発明の方法は、シリコン中に比較的複雑で不規則な形状
を微細加工するために、使用できる。また、制御された
エッチングのような従来のアンダーカット技術も、ここ
で述べた方法とともに、使用できる。たとえば、図３は
ブリッジ部２０３によって接続された２つの微細加工領
域２０２及び２０４を有する基板２０１を含むシリコン
ウエハ２００を示す。図４に示された別の構造では、シ
リコンウエハ３００は突き出した微細加工領域３０２と
そこから横に延びる片持ち梁３０３を有する基板３０１
を含む。そのような微細加工された構造は、シリコン基
板から完全に分離するために、従来の技術により、更に
アンダーカットできる。Although there is some degree of crystal plane selectivity, the method of the present invention can be used to micromachine relatively complex and irregular shapes in silicon. Also, conventional undercutting techniques such as controlled etching can be used with the methods described herein. For example, FIG. 3 shows a silicon wafer 200 including a substrate 201 having two microfabricated regions 202 and 204 connected by a bridge portion 203. In another structure shown in FIG. 4, a silicon wafer 300 has a substrate 301 having a protruding microfabricated region 302 and a cantilever beam 303 extending laterally therefrom.
including. Such microfabricated structures can be further undercut by conventional techniques to completely separate them from the silicon substrate.
【００１５】本発明について、好ましい実施例をあげて
述べてきたが、特許請求の範囲により規定される本発明
の精神又は視野を離れることなく、変形及び修正ができ
ることが、当業者には容易に明らかであろう。While the present invention has been described by way of preferred embodiments, those skilled in the art will readily appreciate that variations and modifications may be made without departing from the spirit or scope of the invention as defined by the claims. Would be obvious.
【図１】シリコン中のパターン形成されたドーピング領
域を示す概略側面図である。FIG. 1 is a schematic side view showing a patterned doped region in silicon.
【図２】エッチングにより微細加工されたシリコンを示
す側面図である。FIG. 2 is a side view showing silicon finely processed by etching.
【図３】微細加工により形成されたブリッジ構造を示す
側面図である。FIG. 3 is a side view showing a bridge structure formed by microfabrication.
【図４】微細加工により形成された片持ち梁構造を示す
側面図である。FIG. 4 is a side view showing a cantilever structure formed by microfabrication.
１００ シリコン基体 １０１ 基板 １０２、１０３ 領域 ２００ シリコンウエハ ２０１ 基板 ２０２ 微細加工領域 ２０３ ブリッジ部 ２０４ 微細加工領域 ３００ シリコンウエハ ３０１ 基板 ３０２ 微細加工領域 ３０３ 片持ち梁 100 Silicon Substrate 101 Substrate 102, 103 Region 200 Silicon Wafer 201 Substrate 202 Microfabrication Region 203 Bridge Part 204 Microfabrication Region 300 Silicon Wafer 301 Substrate 302 Microfabrication Region 303 Cantilever Beam
Claims (10)
れた形状の異なってドープされた領域のパターンを形成
し、前記表面を電解液に接触させて置いた時、前記整形
された領域の少くとも１つは相対的に陽性で、前記整形
された領域の別の少くとも１つは相対的に陰性である工
程；及び ｃ） 酸化酸性エッチャントで前記表面をエッチング
し、エッチャントにより、陽極領域を選択的に除去する
工程を含むシリコン微細構造の作製方法。1. A step of preparing a silicon substrate; b) forming a pattern of differently-doped regions of a predetermined shape in the surface of the silicon substrate, and contacting the surface with an electrolytic solution. At least one of the shaped regions is relatively positive and another at least one of the shaped regions is relatively negative when placed on a substrate; and c) with an oxidative acid etchant. A method for producing a silicon fine structure, comprising the steps of etching the surface and selectively removing the anode region with an etchant.
ｐ−ドープである請求項１記載の方法。2. The relatively positive shaped area is
The method of claim 1 which is p-doped.
である請求項２記載の方法。3. The method of claim 2, wherein the relatively negative region is n-doped.
素酸及び酸化剤の水溶液から成る請求項１記載の方法。4. The method of claim 1, wherein the oxidizing acid etchant comprises an aqueous solution of hydrofluoric acid and an oxidizing agent.
載の方法。5. The method of claim 4, wherein the oxidizing agent is chromic acid.
クロム酸と４９重量パーセント・フッ化水素酸の本質的
に１：１の混合液から成る請求項１記載の方法。6. The oxidizing acid etchant is 1.2M.
The method of claim 1 comprising an essentially 1: 1 mixture of chromic acid and 49 weight percent hydrofluoric acid.
方法。7. The method of claim 4, wherein the oxidant is nitric acid.
記載の方法。8. The oxidant is hydrogen peroxide.
The described method.
載の方法。9. The method of claim 1, wherein the silicon is single crystal.
記載の方法。10. The silicon is polycrystalline.
The described method.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32061394A | 1994-10-07 | 1994-10-07 | |
| US08/320613 | 1994-10-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH08109500A true JPH08109500A (en) | 1996-04-30 |
Family
ID=23247181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25913595A Withdrawn JPH08109500A (en) | 1994-10-07 | 1995-10-06 | Fine working of silicon |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH08109500A (en) |
| DE (1) | DE19530944A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003515459A (en) * | 1999-10-22 | 2003-05-07 | ザ ボード オブ トラスティーズ オブ ザ ユニバーシティ オブ イリノイ | Silicon nanoparticles and method for producing the same |
| JP2007517406A (en) * | 2003-12-30 | 2007-06-28 | インテル コーポレイション | Method for changing etching selectivity of film |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6309975B1 (en) | 1997-03-14 | 2001-10-30 | Micron Technology, Inc. | Methods of making implanted structures |
| DE10057656C1 (en) * | 2000-11-21 | 2002-04-04 | Rossendorf Forschzent | Production of an integrated stylus used in scanning electron microscopes comprises radiating a silicon substrate with ions, removing the areas radiated with the ions, and radiating the substrate with ions of different energy and/or dosage |
| EP2556015B1 (en) * | 2010-04-09 | 2016-08-10 | Frank Niklaus | Free form printing of silicon micro- and nanostructures |
| DE102011050136A1 (en) * | 2010-09-03 | 2012-03-08 | Schott Solar Ag | Process for the wet-chemical etching of a silicon layer |
-
1995
- 1995-08-23 DE DE1995130944 patent/DE19530944A1/en not_active Withdrawn
- 1995-10-06 JP JP25913595A patent/JPH08109500A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003515459A (en) * | 1999-10-22 | 2003-05-07 | ザ ボード オブ トラスティーズ オブ ザ ユニバーシティ オブ イリノイ | Silicon nanoparticles and method for producing the same |
| JP2007517406A (en) * | 2003-12-30 | 2007-06-28 | インテル コーポレイション | Method for changing etching selectivity of film |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19530944A1 (en) | 1996-04-11 |
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