JPH08102417A - Magnetic transducer and recorder - Google Patents

Abstract

PURPOSE: To provide a magnetic transducer using an anti-ferromagnetic body improving the productivity, reliability and thermal resistance. CONSTITUTION: Within a magnetic laminated layer film used for a magnetic transducer, a ferromagnetic film 101 as a ferromagnetic body comprising e.g. NiFe alloy film is formed on a substrate 100 comprising e.g. a glass member and then an antiferromagnetic film 102 as an antiferromagnetic body comprising e.g. Cr alloy film having a cubic lattice crystalline substrate is laminated on the upper part of that ferromagnetic film 101.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic transducer utilizing unidirectional anisotropy and relates to a magnetic recording device for reading and writing information using the magnetic transducer.

[0002]

2. Description of the Related Art The phenomenon of unidirectional anisotropy is well known in the art. This is a result of the interaction caused by the contact of the ferromagnet with the antiferromagnet, and is due to the exchange coupling action between the magnetic moments at both boundary surfaces. For example, Japanese Patent Laid-Open No. 54-10997 discloses that
The exchange coupling between the ferromagnetic NiFe alloy film and the antiferromagnetic FeMn alloy film causes unidirectional anisotropy, which results in the BH of the NiFe alloy thin film.
It is disclosed to shift the loop from the origin.
In addition, US Pat. No. 4,103,315 discloses FeMn.
In addition to the alloy, a gamma phase Mn alloy is mentioned as an antiferromagnetic material exhibiting unidirectional anisotropy. Further, the same publication also lists other antiferromagnetic materials such as NiO, Fe ₂ O ₃ , and NiMn.

Further, Japanese Patent Laid-Open No. 6-76247 discloses an Mn alloy having a face-centered cubic lattice crystal structure as an antiferromagnetic material used in a magnetoresistive sensor.
Specifically, NiMn, IrMn, PdMn, PtMn,
RhMn and alloys obtained by adding a specific element to them are listed. The conventional materials exhibiting unidirectional anisotropy mentioned here are Mn alloys having a gamma phase and a face-centered cubic lattice, except for oxides.

[0004]

According to the above prior art, an antiferromagnetic FeMn film exhibiting unidirectional anisotropy and a ferromagnetic N film.
A magnetic transducer made of an iFe film has an antiferromagnetic F
Since the corrosion resistance of the eMn film is extremely low, there are many practical difficulties. And FeMnC obtained by adding Cr to the FeMn alloy.
When the r film is used, Cr has a problem that the nail point of the antiferromagnetic film is lowered and the heat resistant temperature is lowered.

An oxide antiferromagnetic film such as a NiO film has a heat resistance of about 200 ° C. and a good corrosion resistance, but since it is an oxide, it has almost no electric conductivity and is used for a magnetic transducer. In the case of a NiMn film, a long time heat treatment is required to obtain unidirectional anisotropy, which is a problem in manufacturing. As described above, the conventional magnetic transducer has advantages and disadvantages with respect to corrosion resistance, electrical conductivity, heat resistance, productivity, and the like.

Therefore, a first object of the present invention is to provide a magnetic transducer using an antiferromagnetic film having a body-centered cubic lattice crystal structure, which leads to improvement in productivity, reliability and heat resistance.

Among the antiferromagnetic films having the body-centered cubic lattice crystal structure, for example, the antiferromagnetic film of Cr alloy is limited in the manifestation of unidirectional anisotropy, and this Cr alloy is antiferromagnetic. When used as a magnetic film, the application range of the magnetic transducer is limited. Therefore, a second object of the present invention is to provide a magnetic transducer having a body-centered cubic crystal structure having a wide range of applications.

On the other hand, a third object is to improve the corrosion resistance, heat resistance, productivity and the like of the magnetic transducer having the spin valve structure.

A fourth object is to provide a magnetic recording apparatus having excellent corrosion resistance, heat resistance and productivity.

[0010]

SUMMARY OF THE INVENTION A first object of the present invention is to:
A magnetic transducer including a ferromagnetic material and an antiferromagnetic material in close contact with the ferromagnetic material, wherein the antiferromagnetic material for causing the ferromagnetic material to exhibit unidirectional anisotropy is at least the antiferromagnetic material. This is achieved by having a part of the ferromagnetic material have a crystal structure of a body-centered cubic lattice.

Further, a magnetic transducer that achieves the first object is a separation film composed of a bias film and a non-magnetic material sequentially laminated on a substrate, and a ferromagnetic film laminated on the separation film and having a magnetoresistive effect. And a antiferromagnetic film laminated on the ferromagnetic film, wherein the antiferromagnetic film has a crystal structure of a body-centered cubic lattice.

Furthermore, a first laminated film in which a bias film for applying a lateral bias magnetic field, a separation film, and a magnetoresistive film are sequentially laminated on a substrate, and a vertical laminated film is formed so as to sandwich the first laminated film. A magnetic transducer formed by including a second laminated film in which a ferromagnetic film for applying a bias magnetic field and an antiferromagnetic film are sequentially laminated, and an electrode film laminated on the second laminated film, The magnetic film is in close contact with the antiferromagnetic film,
The antiferromagnetic film for exhibiting unidirectional anisotropy in the ferromagnetic material may have a body-centered cubic lattice crystal structure.

On the other hand, a second object of the present invention is that the antiferromagnetic film having a body-centered cubic crystal structure is a CrMn alloy, and the Mn atom content of the CrMn alloy is 30 to 70.
It is achieved by being in the range of (atomic%). Further, the CrMn alloy can be achieved also by using a ternary or more alloy of Cr, Mn and a predetermined additive element. In particular, the additive elements are Co, Ni, Cu, Ag, A
It is desirable that it is at least one kind of element selected from the group of elements consisting of u and platinum group.

A third object of the present invention is to provide on a substrate,
A second ferromagnetic film whose magnetization direction freely changes according to an external magnetic field, a non-magnetic film made of a non-magnetic material that magnetically separates the second ferromagnetic film, and an anti-ferromagnetic film cause the magnetization direction to change. A magnetic transducer comprising a first ferromagnetic film to be fixed, the antiferromagnetic film, and divided electrodes sequentially stacked, wherein the antiferromagnetic film has a body-centered cubic lattice crystal structure. It can be achieved if there is. Preferably, the nonmagnetic film may have a body-centered cubic lattice crystal structure.

Further, a magnetic recording device for achieving the fourth object of the present invention is a magnetic recording medium for recording information, a ferromagnetic material and a crystal of a body-centered cubic lattice at least partially adhered to the ferromagnetic material. A magnetic head comprising a magnetic transducer including an antiferromagnetic material having a structure for reading or writing the information; and an actuator means for moving the magnetic head to a predetermined position on the magnetic recording medium, The magnetic head is configured to include transmission / reception of the information read or written by the magnetic head and control means for controlling the movement of the actuator means.

[0016]

According to the present invention, an antiferromagnetic film having a body-centered cubic lattice crystal structure is brought into close contact with a ferromagnetic film and exchange-coupled with the ferromagnetic film to generate unidirectional anisotropy.
Will be offered for the first time. By using an antiferromagnetic film having a body-centered cubic crystal structure, (1) a heat treatment step is unnecessary and productivity is improved, and (2) an antiferromagnetic film with excellent touch resistance is formed, and reliability is improved. (3) For example, Cr, which is a body-centered cubic lattice, is used for the nonmagnetic film, and the heat resistance is increased. In other words, a new type of magnetic transducer that has a wealth of technology has the advantages described above, and it is possible to selectively use the old and new magnetic transducers according to the purpose, leading to the expansion of the usage of the magnetic transducer. It is a thing.

On the other hand, Cr is an antiferromagnetic material having a Neel point of about 30 degrees and has a Neel point of about room temperature, so that it is difficult to apply it to a wide range at present. In order to raise the Neel point to a temperature at which the range of application is widened, it is conceivable to raise the Neel point by adding some additive element. As one method, it is known that when a proper amount of Mn is added to Cr, the Neel point is significantly increased in the case of a bulk alloy. Therefore, unidirectional anisotropy can be generated by laminating a CrMn alloy film having a predetermined composition on the ferromagnetic thin film.

In order to further expand the range of application, the above CrM
It is possible to increase the coupling magnetic field by stacking an alloy film obtained by adding one or more elements selected from the group consisting of Cu, Au, Ag, Co, Ni and platinum to an n alloy with a ferromagnetic film. became. It is considered that the action of this additional element is due to the change in the spin alignment of the antiferromagnetic film due to the additional element, but the details are not clear. Therefore,
The application range of the new type magnetic transducer is expanded.

A magnetic transducer having a spin valve structure using the antiferromagnetic film having the body-centered cubic crystal structure as described above, or a magnetic recording device using these magnetic transducers, It is clear that it will be excellent in corrosion resistance, heat resistance and productivity.

[0020]

Embodiments of the present invention will be described below with reference to the drawings.

The antiferromagnetic material having a crystal structure of a body-centered cubic lattice stable at room temperature or higher and having a Neel point at room temperature or higher is substantially only Cr alloy. And among the antiferromagnetic materials made of a Cr alloy having the crystal structure of this body-centered cubic lattice,
An alloy system that exhibits very high Nail points in bulk materials is the CrMn alloy.

Regarding this, for example, Yoshikazu Hama
guchi et al. "Antiferromagnetism in Disordered BCC Cr
-Mn Alloys "(Journal of The Phiyical Society of Ja
PanVol.19, No.10, 1964, pages 1849 to 1856) contains Cr.
And CrMn alloys are antiferromagnetic materials having a body-centered cubic crystal structure, and the addition of Mn raises the antiferromagnetic Neel point to about 800K.

In order to clarify the range of material composition and operating characteristics of a magnetic transducer when this Cr alloy is used in a magnetic transducer, various magnetic materials having a laminated structure shown in the following figure are used. The laminated film was produced by an RF sputtering apparatus, and finally, the magnetic laminated film was used to produce a magnetic transducer.

FIG. 1 is a diagram showing a cross-sectional structure of a magnetic laminated film of one embodiment according to the present invention. The magnetic laminated film shown in the figure is
By using an alloy target having a composition of Ni ₈₂ Fe ₁₈ and a Cr target having a Mn chip attached on the surface, N
The iFe / CrMn film was formed by vapor deposition on a glass substrate.

In the magnetic laminated film, a ferromagnetic film 101 made of a ferromagnetic material such as a NiFe alloy film is formed on a substrate 100 made of, for example, a glass material, and an upper layer portion of the magnetic film 101 is made of, for example, C.
This is a structure in which an antiferromagnetic film 102 as an antiferromagnetic material made of an rMn film is laminated. The thickness of the ferromagnetic film 101 is 40 (nm),
The film thickness of the antiferromagnetic film 102 was 50 (nm). When depositing the film on the substrate, permanent magnets were attached to both ends of the substrate so that a magnetic field of about 40 (Oe) was applied at the center of the substrate.

The above magnetic field has a function of magnetizing the NiFe film, which is a ferromagnetic film, in one direction when the film is vapor-deposited, and induces unidirectional anisotropy in the vapor-deposited film. As is well known for a laminated film of a ferromagnetic film having unidirectional anisotropy and an antiferromagnetic film, a CrMn film deposited on a NiFe alloy shifts the magnetization curve of the NiFe film from the origin. The magnitude of this shift is determined by the CrMn film and NiFe.
It was measured as the magnitude of the magnetic field that exchange-coupled with the membrane.
This magnetic field is called the coupling field or exchange coupling field. Hereinafter, it is simply referred to as a coupling magnetic field.

Note that heat treatment was not performed in the production of this magnetic laminated film and each of the following magnetic transducer examples. Next, the coupling magnetic fields of the two stacking methods were compared when the CrMn film was formed on the NiFe film and when the NiFe film was formed on the CrMn film.

FIG. 2 is a diagram showing the relationship between the Mn composition of the CrMn film and the magnitude of the coupling magnetic field. The figure shows the relationship between the Mn atom content of the CrMn alloy and the coupling magnetic field,
This is the result when a CrMn film is formed on the NiFe film. When the Mn atom content is low, no coupling magnetic field is generated, but when the Mn atom content is 30 (%) or more, the coupling magnetic field is generated. From this result, in order to bring the unidirectional anisotropy into contact with the NiFe film, the CrM
It can be said that the lower limit of the Mn atom content rate of the n-alloy film is about 30 (%). The above (%) is (atomic%). All (%) described below are also (atomic%).

When a CrMn film was formed on the NiFe film, it was confirmed by X-ray diffraction that the CrMn film had a body-centered cubic lattice. The NiFe film is a face-centered cubic lattice and has a different crystal structure from the body-centered cubic lattice of the CrMn film, but the shortest interatomic distance on the (111) plane of the NiFe film is 2.51.
Since it is angstrom, which is close to the shortest interatomic distance of about 2.5 angstrom on the (110) plane of the CrMn film,
It is considered that the CrMn film was epitaxially grown on the NiFe film to form the body-centered cubic CrMn film.

On the contrary, when the NiFe film is formed on the CrMn film, the coupling magnetic field is 0 (O) for all the compositions shown in FIG.
e). This is because when the NiFe film is formed on the CrMn film, the CrMn film is formed on the glass substrate.

FIG. 3 shows CrMn formed on a glass substrate.
It is a figure which shows the X-ray diffraction profile of a film. It is a result of X-ray diffraction of a CrMn film formed on a glass substrate. The horizontal axis represents the scan angle 2θ, and the vertical axis represents the diffracted X-ray intensity, which is an arbitrary intensity. The X-ray source is Cu kα ray. In this figure, the peak written as Cr (110) is a diffraction line from the (110) plane of Cr of the body-centered cubic lattice. on the other hand,
The peak written as CrMn (002) is a diffraction line from the (002) plane of the CrMn intermetallic compound (body-centered tetragonal lattice crystal structure).

As can be seen from the figure, the crystal structure of the CrMn film is a body-centered cubic lattice up to a Mn composition of 36 (%), but changes to a CrMn phase when the Mn composition reaches 46 (%). From this result, it is shown that as the Mn composition increases (when the CrMn film is formed on the glass substrate), the body-centered cubic lattice becomes difficult to form. When a large amount of Mn is contained,
That is, when the CrMn film is formed below the NiFe film, the cause of no exchange coupling can be said to be that the body-centered cubic lattice is not taken.

However, even when a CrMn (antiferromagnetic) film is formed below the NiFe (ferromagnetic) film, for example,
If a stable CrMn alloy film having a body-centered cubic lattice can be formed by an appropriate underlayer film or formation conditions, a coupling magnetic field should be generated. That is, the upper limit of the Mn composition cannot be determined only from these experimental results, but the Judging from the phase diagram of the bulk alloy, the limit Mn amount at which the body-centered cubic lattice can be formed is about 70 (%). it is conceivable that.

Therefore, in order to generate unidirectional anisotropy with the NiFe film, it can be said that the upper limit of the atomic content of Mn atoms in the CrMn alloy film is about 70 (%).

By the way, the Mn atom content is 30 (%) to 7
A predetermined coupling magnetic field can be obtained by combining a CrMn alloy of 0 (%) and a NiFe film. However, if a large coupling magnetic field cannot be obtained to broaden the application range, or if the CrMn alloy film has a third The relationship between the composition and the coupling magnetic field of the CrMnM alloy film containing the additional element M was examined. Ie C
An antiferromagnetic film having a composition made of CrMnM having a body-centered cubic lattice was formed by adhering a chip of the additive element M on the rMn target and studied.

FIG. 4 is a diagram showing changes in the coupling magnetic field when an additive element is added to the CrMn film. It shows the magnitude of the coupling magnetic field when various elements are added to CrMn. The point A in the figure is the case where the additive element M is not added, and CrMn containing about 50 (%) of Mn on the NiFe film.
It shows the value of the coupling magnetic field when the alloy film is formed. Originally, the CrMn alloy as the parent phase is an alloy showing a stable body-centered cubic crystal structure. Therefore, Cr and M
It is assumed that an alloy of three or more elements in which an additive element is added to the matrix phase of n is also an alloy having a body-centered cubic crystal structure.

As a result of an experiment, as the additional element M, for example, a platinum group element such as Pt, Rh, Pd, or Co, Ni, Cu, Ag, Au, or the like was added to determine the magnitude of the coupling magnetic field. It became clear to increase. On the other hand, elements such as Al, Ti, Sb, and Ta are CrMn.
The coupling magnetic field is almost zero even if added to the alloy slightly.
It became clear that it would be (Oe).

The experimental results shown here are for the case where one kind of element is added, but a multi-phase alloy thin film in which two or more kinds of metal elements such as Pt, Pd, Co and Cu are added together is used as a ferromagnetic film. It is easily presumed that unidirectional anisotropy also occurs when laminated.

FIG. 5 is a diagram showing the composition dependence of the coupling magnetic field when Co or Pt is added to the CrMn film. M
The coupling magnetic field when Co or Pt is added to the CrMn alloy containing n of about 50 (%) is shown. C as shown
When o is added, the coupling magnetic field becomes maximum at about 8 (%),
After that, it decreases with the addition of Co. In the case of Pt, the coupling magnetic field becomes maximum with the addition of about 12 (%), and then decreases. The maximum value of the coupling magnetic field is about 20 (Oe) when Pt is added and about 15 (Oe) when Co is added.
Met. In either case, it is shown that the addition magnetic field is reduced by adding about 30 (%) of the additional element, and from this result, the upper limit of the content of the additional element to the CrMn film can be said to be 30 (%). .

FIG. 6 is a diagram showing the temperature change of the coupling magnetic field when the CrMnPt film or the CrMnCo film is laminated on the NiFe film. This experimental result is measured from the back side of the substrate by the Kerr effect using a laser having a spot diameter of about 10 (μm). The magnitude of the coupling magnetic field is slightly different from the results of FIGS. 4 and 5 in absolute value, but there is no problem in comparing the present invention with the conventional example. As shown in this figure, the coupling magnetic field decreases uniformly as the temperature rises. Generally, the temperature at which the unidirectional anisotropy disappears is called the blocking temperature. This is one of the indexes showing the performance of the magnetic laminated film including the ferromagnetic film and the antiferromagnetic film.

As shown in the figure, the blocking temperature when the CrMnPt film or the CrMnCo film is laminated on the NiFe film according to the present invention is 280.degree. The coupling magnetic field temperature change in the case of stacking a FeMn film on a NiFe film which is a typical conventional example is illustrated, but the blocking temperature is
It is about 170 ° C. It can be seen that the CrMn / NiFe film according to the present invention has a higher blocking temperature than the FeMn / NiFe film of the conventional example. In the present invention and the conventional example, there is no problem as long as it is used in a normal temperature range, but the magnetic transducer according to the present invention which can be used even in a high temperature range of 170 ° C. or higher has a wide application range from this point as well. It can be said that

Prior to describing the embodiments, a prior art magnetic transducer will be described for better understanding.

A magnetic transducer called a magnetoresistive sensor or head has been disclosed. This magnetoresistive sensor (hereinafter referred to as MR sensor) is made of a magnetoresistive material in order to highly sensitively read information (data) recorded as a magnetic signal on a magnetic recording medium (hereinafter referred to as medium) at high density. The magnetic signal is converted into a voltage signal by using the resistance change of the MR element.

The MR sensor is applied as a read head for high density recording for three reasons. That is,
The first reason is that the output voltage when detecting the change in magnetic flux from the medium is large, and the output voltage increases in proportion to the given detection current. Secondly, magnetic signals recorded at a high linear recording density can be reproduced by applying an appropriate magnetic shield. Third, the reproduction output of the MR sensor is independent of the relative velocity between the sensor and the medium. In particular, for the third reason, in a magnetic disk device having a small disk diameter in which the relative speed between the magnetic head and the medium is small, the output is higher than that of the conventional electromagnetic induction type head.

In the prior art, in order to operate the MR sensor with low noise and small waveform distortion, it is disclosed that a bias magnetic field in two directions is applied to the MR element. A transverse bias magnetic field is applied to the magnetoresistive film of the MR sensor so that the response to the magnetic flux from the medium becomes linear. This bias field is perpendicular to the plane of the medium and parallel to the surface of the MR element. The lateral bias magnetic field is applied by a magnetic film made of a magnetic material deposited in the vicinity of the MR element via a magnetic insulating insulating film.

The other bias magnetic field is called a longitudinal bias magnetic field and is applied parallel to the surface of the medium and the longitudinal direction of the MR element. The purpose of the longitudinal bias field is to suppress Barkhausen noise caused by the irregular behavior of magnetic domains in the MR element. This longitudinal bias field is provided by a permanent magnet or an exchange coupled bias field. The exchange coupling bias applies a longitudinal bias magnetic field by the unidirectional anisotropy generated by the exchange coupling between the MR film which is a ferromagnetic film and the antiferromagnetic film.

Further, Japanese Patent Application Laid-Open No. 3-125311 describes a method of applying a longitudinal bias magnetic field using a permanent magnet film. In this method, the magnetoresistive effect film exists only in the central portion for converting a magnetic signal, permanent magnets are arranged at both ends of the magnetoresistive effect film, and a longitudinal bias magnetic field is applied to the central magnetoresistive effect film. It is a thing.

Next, an embodiment of the magnetic transducer according to the present invention will be described. FIG. 7 is a diagram showing a cross-sectional structure of a magnetic transducer of an embodiment using the magnetic laminated film according to the present invention. As shown in the figure, the magnetic transducer includes a substrate 100, a bias film 111 made of, for example, NiFeNb for applying a bias magnetic field, a separation film 112 made of, for example, a non-magnetic material such as Ta, and an electric field generated according to a change in magnetic field. A ferromagnetic film 101 having a magnetoresistive effect of changing resistance, an antiferromagnetic film 102 having a body-centered cubic lattice crystal structure, and an electrode 115. Then, as shown in the figure, the antiferromagnetic film 102 and the electrode 115 are divided. The ferromagnetic film 101 is made of, for example, a NiFe film and is also called a magnetoresistive film. The ferromagnetic film 101 is the antiferromagnetic film 1.
It is connected to the electrode 115 via 02.

Then, the divided electrodes 115 and 115 are divided.
Therefore, a current for detecting the change in the electric resistance is supplied, and the converted reproduction voltage is detected. Therefore, a region between the electrodes 115 and 115 is a region for detecting a magnetic signal, that is, a reproduction voltage converted from an electric resistance change corresponding to a magnetic field change. And by the antiferromagnetic film 102,
Unidirectional anisotropy develops in the end region of the ferromagnetic film 101 which is the magnetoresistive film. Therefore, the end region of the ferromagnetic film 101 is the detection region 201, and the region outside the end region is the non-detection region 301 in which no magnetic signal is detected. In addition, as shown in the figure, in the lower part of the electrode 115, the detection area 201
It is also possible to separate 301.

As described above, the ferromagnetic film 101 is divided into the detection region 201 in which the magnetic signal is detected and the non-detection region 301 in which it is not detected.
When divided, the antiferromagnetic film 102 deposited on the portion corresponding to the detection region 201 has a body-centered cubic lattice crystal structure. The advantage in this case is the enrichment of technology.

On the other hand, the reproduction voltage from the magnetoresistive film is obtained as a signal for the control means described later to read the data (information) recorded on the magnetic recording medium. Further, the change in resistance has a correlation with the change in the magnetic field generated by the above data.

The antiferromagnetic film 102 is directly formed on the ferromagnetic film 101 as the magnetoresistive film so that the magnetoresistive film is in a single magnetic domain state. The antiferromagnetic film 102 is a Cr alloy, a CrMn alloy, or a CrMnM alloy having a body-centered cubic lattice crystal structure. With this antiferromagnetic film,
A longitudinal bias magnetic field is applied to the magnetoresistive film by exchange coupling, and the magnetoresistive film becomes a single magnetic domain state.

Since the magnetoresistive effect film is in the single magnetic domain state, Barkhausen noise generated from the magnetoresistive effect film can be suppressed. The reason is that the domain wall irregular movement in the magnetoresistive effect film, which is a factor of Barkhausen noise, is suppressed by the single magnetic domain state.

By applying a lateral bias magnetic field, the bias film 111 generates a bias magnetic field in a direction perpendicular to the magnetic disk described later. As a result, the magnetization of the magnetoresistive film changes to a lateral bias magnetic field in a direction inclined from the direction parallel to the medium. This lateral bias magnetic field has the effects of putting the magnetoresistive effect film into a linear response mode and substantially improving the sensitivity of the magnetoresistive effect film. As described above, the bias film 111 for applying the lateral bias magnetic field is
Through the separation film 112, it is magnetically separated from the ferromagnetic film 101 as the magnetoresistive film. As is well known, the transverse bias magnetic field can be applied by a shunt bias, a soft film bias, or a permanent magnet bias.

FIG. 8 is a diagram showing a sectional structure of a magnetic transducer of another embodiment using the magnetic laminated film according to the present invention. The magnetic transducer includes a substrate 100, a ferromagnetic film 101, an antiferromagnetic film 102, an electrode 115, and a bias film 111.
And a separation film 112 and a magnetoresistive effect film 116. That is, the magnetic transducer includes a bias film 111 for applying a lateral bias magnetic field and a separation film 1 on the substrate 100.
12 and the magnetoresistive film 116 are sequentially laminated, and a first laminated film formed as a detection region, and a ferromagnetic film 101 for applying a longitudinal bias magnetic field so as to sandwich the first laminated film and an anti-reinforcement. A second laminated film in which a magnetic film 102 is sequentially laminated and an electrode film laminated on the antiferromagnetic film 102 of the second laminated film are included and formed.

In other words, the divided ferromagnetic films 10 at both ends are
1 is vapor-deposited on the substrate 100 with a bias film 111 for applying a lateral bias magnetic field at the center sandwiched therebetween. And
On the ferromagnetic films 101 at both ends, an antiferromagnetic film 102 having a body-centered cubic lattice crystal structure and electrodes 115 are laminated in close contact.
An isolation film 112 and a magnetoresistive film 116 are sequentially stacked on the central bias film 111. At this time, the magnetoresistive film 116 has a structure in which it is in close contact with the ferromagnetic film 101 and the antiferromagnetic film 102. Also in this embodiment, the electrodes 115 and 1
The area between 15 or the above-mentioned central portion is the detection area for detecting the reproduction voltage converted from the electric resistance change according to the magnetic field change. Therefore, the magnetoresistive film 11
The 6 is etched and formed so that it is disposed substantially only in the area subject to the magnetic field change from the medium.

The antiferromagnetic film 102 of this embodiment is also a body-centered cubic lattice CrMn alloy. More preferably, Pt, P
It is an alloy to which d and the like are added. The ferromagnetic film 101 is, for example,
It is a NiFe film. Further, the ferromagnetic film 101 may be an Fe alloy having a body centered cubic lattice. Antiferromagnetic film 102
The ferromagnetic film 101 formed in close contact with is magnetized in a direction parallel to the magnetoresistive effect film 116 and the surface of the magnetic disk described later. Then, the magnetic field generated by the magnetized ferromagnetic film 101 brings the magnetoresistive film 116 into a single magnetic domain state.

By the way, in the magnetic transducer of the present embodiment, since the magnetoresistive effect film 116 is arranged only in the detection region where the resistance changes due to the magnetic field from the medium, a signal recorded with a narrower recording track width can be recorded. Suitable for reading magnetic heads. The reason is that such a magnetic head is unlikely to be affected by a signal recorded on an adjacent track, and erroneous reading does not occur even with a narrow recording track width.

Here, a conventional magnetic transducer having a spin valve structure will be described.

In order to meet the demand for higher sensitivity of the magnetic transducer, there is a new magnetic transducer called a spin valve structure. The basis of this spin-valve structure is a fixed layer consisting of a ferromagnetic film whose magnetization is fixed in a specific direction, and a free layer consisting of a ferromagnetic film that is laminated via a thin non-magnetic layer and whose magnetization direction can rotate freely. Composed. In this structure, the scattering probability of conduction electrons changes depending on the spin directions of the conduction electrons of the fixed layer and the free layer, so that the electric resistance changes depending on the angle between the magnetization of the free layer and the magnetization of the fixed layer. Change. Such a structure is called a spin valve structure.

A structure in which an antiferromagnetic film is laminated in close contact with the fixed layer in order to fix the magnetization of the fixed layer is known. Japanese Unexamined Patent Publication No. 6-111252 describes a spin valve element in which the layer of this antiferromagnetic film is separated from the pinned layer of magnetization by a soft magnetic layer. Also, Ching Tsang et al. "Design,
Fabrication & Testing of Spin-Valve Heads for High
Density Recording "(IEEE Transaction on Magnetics
MAG-30, No.6, November 1994), FeMn as antiferromagnetic film
A magnetoresistive head using a spin valve effect, which uses a film, a thin Co film as a fixed layer, and a NiFe film as a free layer is described. A conventional antiferromagnetic film is a face-centered cubic lattice such as an FeMn film, and a spin valve element made of a body-centered cubic antiferromagnetic film is not known.

FIG. 9 is a sectional view showing a magnetic transducer having a spin valve structure according to an embodiment using the magnetic laminated film according to the present invention. The spin-valve element used in the magnetic transducer having the spin-valve structure is the substrate 100.
A free film 121, a non-magnetic film 122, a fixed film 123 as the ferromagnetic film 101, an antiferromagnetic film 102, and divided electrodes 115.

That is, on the substrate 100, the free film 121 as the second ferromagnetic film whose magnetization direction substantially freely changes in response to an external magnetic field is formed, and is made of a non-magnetic material. The fixed film 123 of 101 is formed as a ferromagnetic film whose magnetization direction is substantially fixed by the antiferromagnetic film 102 via the non-magnetic film 122 that magnetically separates the fixed film.
The antiferromagnetic film 102 and the divided electrode 115 are sequentially laminated on the 123.

The ferromagnetic film 101 as the first ferromagnetic film is
It is a magnetoresistive effect film made of a ferromagnetic material such as Fe or NiFe, and is also called a fixed film 123. Below, the ferromagnetic film 101
Is described as the fixed film 123. The antiferromagnetic film 102 is made of a CrMn alloy having a body-centered cubic lattice, and is preferably made of CrMnP.
It is a t-film. The non-magnetic film 122 is made of a non-magnetic material,
For example, there is Cu and the like, but Cr is preferable.

The antiferromagnetic film 102 formed in direct contact with the fixed film 123 imparts unidirectional anisotropy and fixes the direction of magnetization. That is, the antiferromagnetic film 102 having a crystal structure having a body-centered cubic lattice is exchange-coupled with the fixed film 123 at the interface to fix the magnetization direction in the fixed film 123 to the magnetization direction. Then, a detection current of electric resistance is applied to the element from the divided electrodes 115, and a reproduction voltage is detected.

The term "magnetization" used herein means to orient the spins in the antiferromagnetic film 102 in a specific direction, and the following two methods are known. One method is to apply a magnetic field to the ferromagnetic film in a specific direction when the antiferromagnetic film is formed by sputtering or the like. By adopting such a film forming method in a magnetic field, the spin direction of the antiferromagnetic film is directed to the magnetic field direction during sputtering.

The other method is a method of heat treating in a magnetic field after forming the antiferromagnetic film and the ferromagnetic film. The antiferromagnetic film is heat-treated together with the ferromagnetic film, and when cooled below the Neel point of the antiferromagnetic film, the spin directions are aligned with the direction of the magnetic field. Therefore, while applying a magnetic field in a specific direction,
By increasing the temperature above the Neel point of the antiferromagnetic film and decreasing the temperature as it is, the magnetization of the ferromagnetic film is fixed in the direction applied from the outside.

The fixed film 123 magnetically separated by the non-magnetic film 122 is magnetized in a direction perpendicular to a magnetic disk, which will be described later, by magnetizing. On the other hand, the free film 121
Is formed such that its easy axis of magnetization is parallel to the magnetic disk. In the spin valve element, the electric resistance of the fixed film 123 as the magnetoresistive film changes according to the angle formed by the magnetization directions of the fixed film 123 and the free film 121. When the angle is 0 degree, the electric resistance becomes the smallest, and when the angle is 180 degrees, the electric resistance becomes the largest.

Therefore, in order to obtain positive and negative reproducing voltages with respect to positive and negative magnetic signals from the recording medium, in the initial state, the magnetization directions of the fixed film 123 and the free film 121 are between 0 degree and 180 degrees. It is desirable that they exist, that is, they are orthogonal. Fixed membrane
By setting the direction of magnetization of 123 and the direction of the easy axis of magnetization of the free film 121 as in this embodiment, the fixed film 123 and the free film 1
The magnetization directions of 21 can be made almost orthogonal.

The non-magnetic film 122 has a smaller magnetoresistance change rate and a higher reproduction voltage as the non-magnetic film 122 is thinner within a range where ferromagnetic coupling does not occur between the fixed film 123 and the free film 121. The film thickness composition of this embodiment is such that the fixed film 123 is 2 (nm), the free film 121 is 5 (nm), and the non-magnetic film is
122 is 1 (nm). Free film 121 as second ferromagnetic film
Needs to be easily magnetized and rotated by a magnetic field from the recording medium, and is generally made of a magnetic material such as Fe or NiFe. Above all, NiFe has a small coercive force and is easily magnetized.
The material is suitable.

The fixed film 123 need not be a material that is particularly easily magnetized, as long as the magnetization is oriented in a specific direction. For example, a material having a relatively large coercive force such as an Fe alloy may be used. . When an alloy having a body-centered cubic lattice crystal structure such as Fe alloy is used for the fixed film 123, Fe
The coercive force can be reduced by using an alloy obtained by adding another element to the alloy, for example, a FeSi alloy. Free film
The fixed film 121 and the fixed film 123 are not limited to the ferromagnetic material. Although the spin valve element having the simplest configuration has been described in the present embodiment, a configuration in which the number of stacked layers is further increased based on the configuration of the present embodiment is also possible.

On the other hand, the first advantage obtained by using the CrMn film, preferably the CrMnPt film for the antiferromagnetic film 102 exchange-coupled with the fixed film 123 is that the spin valve element having unidirectional anisotropy is used. The point is that a heat treatment step is not required when manufacturing. A conventional NiMn film requires a long time heat treatment. That is, the NiMn film, which is an antiferromagnetic material having practical touch resistance, does not have unidirectional anisotropy immediately after vapor deposition by sputtering or the like. This is because the NiMn film becomes an antiferromagnetic material at a high temperature only in the face-centered cubic lattice crystal structure, and a long-time heat treatment of about 250 ° C. is required to form this face-centered cubic lattice crystal structure. And Then, this long-time heat treatment is performed by using a specific material of the spin valve structure, such as NiFe /
A material such as Cu / NiFe has a problem that the spin valve effect is often impaired due to mutual diffusion between layers.

On the other hand, in the case of the FeMn film, the heat treatment is not necessary even in the conventional case. However, in the case of an FeMn film that is an antiferromagnetic material that does not require such heat treatment, unidirectional anisotropy occurs immediately after sputtering, but it is easily corroded, and practical touch resistance must be ensured. Was difficult.
Further, the FeMn alloy is a gamma layer Mn alloy, and it is necessary to provide a base film having a specific crystal structure in order to realize antiferromagnetism. Specifically, the base film is a NiFe film having a face-centered cubic lattice crystal structure or a metal film having a face-centered cubic lattice crystal structure similarly. In other words, even if an antiferromagnetic film made of a FeMn alloy having a face-centered cubic lattice is formed on a metal having a body-centered cubic lattice crystal structure such as an Fe alloy, the unidirectional anisotropy is There was a problem that it did not manifest.

As described above, the first advantage of the antiferromagnetic material having the body-centered cubic lattice crystal structure is that it is easy to manufacture because it does not require a heat treatment step, or is excellent in touch resistance and highly reliable. It is to connect.

Next, a CrMn alloy having a body-centered cubic crystal structure according to the present invention, preferably CrMnPt, is applied to the antiferromagnetic film.
The second advantage of the spin valve element using the alloy is that since the antiferromagnetic film is a body-centered cubic lattice, the fixed film as the first ferromagnetic film has a ferromagnetic structure having a body-centered cubic lattice crystal structure. It is possible to use a membrane. There is an Fe alloy in the ferromagnetic film having the body-centered cubic crystal structure, and the Fe alloy can be used in the ferromagnetic film of the spin valve element according to the present invention. The availability of Fe alloys (Fe-based materials) leads to the effect of expanding the range of material selection for spin valve elements (one of the enrichment of technology).

Further, it also leads to improvement in heat resistance.
For example, when the face-centered cubic lattice FeMn film is used as the antiferromagnetic film as in the conventional case, the face-centered cubic lattice NiFe alloy film must be used as the fixed film as described above. . Furthermore, when a NiFe film is used as the fixed film, the nonmagnetic film also needs to be a face-centered cubic lattice, and for example, it is necessary to use Cu or the like of the face-centered cubic lattice.

Thus, the non-magnetic film is Cu and the ferromagnetic film is N.
The spin valve element using iFe has a problem that interdiffusion between these films is likely to occur and the heat resistance is low. That is, TCHuang et al. "Effect of Annealing o
n the Interfaces of Giant-Magnetoresistance Spin-V
alve StructureS "(Applied Physics Letters, Vol.62 (1
3), March, 1993, pages 1478 to 1480), the heat resistance temperature is about 250 ° C.

On the other hand, in the case of the spin valve element according to the present invention in which the Cr alloy having the body-centered cubic lattice is used for the non-magnetic film and the Fe-based alloy having the body-centered cubic lattice for both the fixed film and the free film is used. It can be said that there is an effect that the heat resistance is improved. In other words, the second advantage of the antiferromagnetic material having a body-centered cubic lattice crystal structure is that the non-magnetic film uses a Cr alloy that is a body-centered cubic lattice, which leads to an effect of improving heat resistance. .

The reason is that the following literature data on heat resistance are considered to be applicable to the spin valve element according to the present invention. That is, there is a document about the heat resistance of the giant magnetoresistive effect film of the Fe / Cr multilayer film. That is, "Fe / Cr Multilay" by W. Hahn et al.
ers: Effect of Annealing on the Spin Structureand M
agnetoresistance "(Journal of Applied Physics, 75,
(7), April, 1994, pages 3564 to 3570) describe the effect of heat treatment on multilayer films. According to this data, the magnetoresistive change rate does not decrease even when the present multilayer film is heat-treated at about 350 ° C.

In the present embodiment, the film is described as a ferromagnetic film, an antiferromagnetic film, a bias film, a separation film, a fixed film, a free film, or the like, but a ferromagnetic layer and an antiferromagnetic layer described as a layer. It goes without saying that it has the same meaning as that conventionally expressed such as ,.

FIG. 10 is a diagram showing a magnetic disk device of an embodiment using the magnetic transducer according to the present invention. 1 shows an outline of applying a magnetic transducer according to the present invention to a magnetic disk device as a magnetic recording device. However, it is obvious that the magnetic transducer of the present invention can be applied to a magnetic recording device such as a magnetic tape device.

The illustrated magnetic disk device comprises a magnetic disk 10 as a magnetic recording medium formed in a disk shape for recording data in a recording area called concentric tracks, and a magnetic transducer according to the present invention. A magnetic head 18 for reading and writing the above data, and a magnetic disk supporting the magnetic head 18.
It is configured to include actuator means for moving the actuator 10 to a predetermined position, and control means for controlling transmission / reception of data read / written by the magnetic head 18 and movement of the actuator means.

Further, the structure and operation will be described in detail. At least one rotatable magnetic disk 10 is supported by a rotating shaft 12 and is rotated by a drive motor 14. At least one slider 16 is installed on the magnetic disk 10, and one or more sliders 16 are provided to support a magnetic head 18 for reading and writing. At the same time as the magnetic disk 10 rotates, the slider 16 moves on the surface of the disk, thereby accessing the predetermined position where the desired data is recorded. Slider 16
Is attached to arm 22 by gimbal 20. The gimbal 20 has a slight elastic force and brings the slider 16 into close contact with the magnetic disk 10. The arm 22 is attached to the actuator 24.

As the actuator 24 as shown in the figure, for example, there is a voice coil motor (hereinafter referred to as VCM). The VCM is composed of a movable coil placed in a fixed magnetic field, and the moving direction and moving speed of the coil are controlled by an electric signal provided from the control means 26 through a line 30. Therefore, the actuator means according to the present embodiment is, for example, a slider 16 and a gimbal.
It is configured to include 20, an arm 22, an actuator 24, and a line 30.

During operation of the magnetic disk device, the magnetic disk
The rotation of 10 creates an air bearing between the slider 16 and the disk surface due to the air flow, which
Are levitated from above the surface of the magnetic disk 10. Therefore, during operation of the magnetic disk device, the air bearing balances with the slight elastic force of the gimbal 20, and the slider 16 floats without contacting the surface of the magnetic disk and at a constant distance from the magnetic disk 10. To be maintained.

Normally, the control means 26 is composed of a logic circuit, a memory, a microprocessor and the like. Then, the control means 26 transmits / receives a control signal via each line to control various constituent means of the magnetic disk device. For example, motor 14 is controlled by a motor drive signal transmitted via line 28. The actuator 24 is controlled by the head position control signal and the seek control signal via the line 30 so as to optimally move and position the selected slider 16 to a target data track on its associated magnetic disk 10. .

Then, the control means 26 controls the electric signal obtained by the magnetic head 18 reading and converting the data of the magnetic disk 10.
Received via line 32 and decrypted. Also a magnetic disk
An electrical signal for writing data to 10 is provided on line 32.
To the magnetic head 18 via. That is, the control means
26 is information read or written by the magnetic head 18.
It controls the sending and receiving of (data).

The above read and write signals may be directly transmitted from the magnetic head 18. Further, the control signal includes, for example, an access control signal and a clock signal. Further, it goes without saying that the magnetic disk device may include a plurality of magnetic disks and actuators, and the actuator may include a plurality of magnetic heads.

[0089]

First, since the new type magnetic transducer according to the present invention produces the following new effects,
It is possible to use the magnetic transducers of which the types are increased according to the purpose, which has an effect of expanding the usage of the magnetic transducers.

That is, CrMn which is brought into direct contact with the ferromagnetic film
The crystal structure of the antiferromagnetic film composed of a film is the same as that of the conventional FeMn.
Alternatively, unlike a NiMn film or the like, since it is a body-centered cubic lattice, the material as the ferromagnetic film is not limited to a face-centered cubic lattice or a fine hexagonal lattice, and the options are expanded, leading to an improvement in productivity of the magnetic transducer. There is.

Further, even if the CrMn film is laminated on the NiFe film, a coupling magnetic field is generated, so that it can be replaced with the conventional FeMn film. Since the CrMn film contains Cr, the surface is densely oxidized. A film is formed, which has the effect of improving the touch resistance as compared with a FeMn film or the like.

On the other hand, in the magnetic transducer having the spin valve structure in which the CrMn film is the fixed film, the coupling magnetic field is generated even if the CrMn film is not heat-treated, so that the heat treatment does not affect the magnetoresistance change rate. Besides, CrM
Since the n-point of the n film is as high as 250 degrees, it has the effect of increasing the heat resistance.

Further, by using the Fe-based body-centered cubic lattice for the fixed film and the free film, Cr, which is the body-centered cubic lattice, is used for the non-magnetic film, and the heat resistance of the spin valve element is There is also the effect of further improvement.

[Brief description of drawings]

FIG. 1 is a diagram showing a cross-sectional structure of a magnetic laminated film of an example according to the present invention.

FIG. 2 is a diagram showing the relationship between the Mn composition of a CrMn film and the magnitude of a coupling magnetic field.

FIG. 3 is a diagram showing an X-ray diffraction profile of a CrMn film formed on a glass substrate.

FIG. 4 is a diagram showing changes in the coupling magnetic field when an additive element is added to the CrMn film.

FIG. 5 is a diagram showing the composition dependence of the coupling magnetic field when Co or Pt is added to the CrMn film.

FIG. 6 CrMnPt film or CrMn on NiFe film
It is a figure which shows the temperature change of the coupling magnetic field at the time of stacking a Co film.

FIG. 7 is a diagram showing a cross-sectional structure of a magnetic transducer of an embodiment using a magnetic laminated film according to the present invention.

FIG. 8 is a diagram showing a cross-sectional structure of a magnetic transducer of another embodiment using the magnetic laminated film according to the present invention.

FIG. 9 is a cross-sectional view showing a magnetic transducer having a spin valve structure according to an embodiment using the magnetic laminated film according to the present invention.

FIG. 10 is a diagram showing a magnetic disk device of an embodiment using a magnetic transducer according to the present invention.

[Explanation of symbols]

10 ... Magnetic disk, 12 ... Rotating shaft, 14 ... Motor, 1
6 ... slider, 18 ... magnetic head, 20 ... gimbal, 2
2 ... Arm, 24 ... Actuator, 26 ... Control means,
28, 30, 32 ... Line, 100 ... Substrate, 101 ... Ferromagnetic film, 102 ... Antiferromagnetic film, 111 ... Bias film, 112 ... Separation film 115 ... Electrode, 116 ... Magnetoresistive film, 121 ... Free film, 122 ...
Non-magnetic film, 123… Fixed film

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI Technical display location H01L 43/08 Z (72) Inventor Akira Kumagai 1-280, Higashikoigakubo, Kokubunji, Tokyo Hitachi, Ltd. Central Research Center

Claims (18)

[Claims] 1. A magnetic transducer including a ferromagnetic material and an antiferromagnetic material that is in close contact with the ferromagnetic material, the antiferromagnetic material for causing the ferromagnetic material to exhibit unidirectional anisotropy. Is a magnetic transducer, wherein at least a part of the antiferromagnetic material has a crystal structure of a body-centered cubic lattice. 2. The magnetic transducer according to claim 1, wherein the antiferromagnetic material is made of a Cr alloy having a crystal structure of a body-centered cubic lattice. 3. The magnetic transducer according to claim 2, wherein the Cr alloy is a CrMn alloy having a predetermined composition. 4. The Cr alloy according to claim 2, wherein the Cr alloy is Cr.
A Mn alloy, wherein the Mn atom content of the CrMn alloy is in the range of 30 to 70 (atomic%). 5. The CrMn alloy according to claim 4,
A magnetic transducer comprising a ternary or higher alloy of Cr, Mn, and a predetermined additive element. 6. The CrMn alloy according to claim 4,
A ternary or more alloy of Cr, Mn, and an additional element, wherein the additional element is at least one element selected from the group of elements consisting of Co, Ni, Cu, Ag, Au, and the platinum group. A magnetic transducer characterized by being. 7. The magnetic transducer according to claim 5, wherein the atomic content of the additional element is in the range of 0 to 30 (atomic%). 8. A bias film and a separation film made of a non-magnetic material, which are sequentially stacked on a substrate, a ferromagnetic film stacked on the separation film and having a magnetoresistive effect, and stacked on the ferromagnetic film. A magnetic transducer including an antiferromagnetic film, wherein the antiferromagnetic film has a crystal structure of a body-centered cubic lattice. 9. The ferromagnetic film according to claim 8, wherein the ferromagnetic film is divided into a detection region that detects a magnetic signal and a non-detection region that does not detect the magnetic signal, and the antiferromagnetic film stacked in the non-detection region is a body-centered cubic lattice. A magnetic transducer having the crystal structure of: 10. A first laminated film in which a bias film for applying a lateral bias magnetic field, a separation film and a magnetoresistive film are sequentially laminated on a substrate, and a first laminated film is vertically sandwiched so as to sandwich the first laminated film. A magnetic transducer formed by including a second laminated film in which a ferromagnetic film for applying a bias magnetic field and an antiferromagnetic film are sequentially laminated, and an electrode film laminated on the second laminated film, The magnetic film is in close contact with the antiferromagnetic film, and the antiferromagnetic film for exhibiting unidirectional anisotropy in the ferromagnetic material has a body-centered cubic lattice crystal structure. Transducer. 11. A second ferromagnetic film, whose magnetization direction freely changes according to an external magnetic field, and a non-magnetic film made of a non-magnetic material and magnetically separating the second ferromagnetic film on a substrate. A magnetic transducer formed by sequentially stacking a first ferromagnetic film whose magnetization direction is fixed by an antiferromagnetic film, the antiferromagnetic film, and divided electrodes, wherein the antiferromagnetic film is A magnetic transducer having a crystal structure of a body-centered cubic lattice. 12. The magnetic transducer according to claim 11, wherein the first ferromagnetic film has a body-centered cubic lattice crystal structure. 13. The non-magnetic film according to claim 12,
A magnetic transducer having a crystal structure of a body-centered cubic lattice. 14. The method according to any one of claims 11 to 13,
The magnetic transducer, wherein the antiferromagnetic film is made of a CrMn alloy having a predetermined composition. 15. The magnetic material according to claim 14, wherein the antiferromagnetic film is a CrMn alloy, and the Mn atom content of the CrMn alloy is in the range of 30 to 70 (atomic%). Transducer. 16. The CrMn alloy according to claim 15, wherein the CrMn alloy is a ternary or more alloy of Cr, Mn, and an additive element, and the additive element is Co, Ni, Cu, Ag, Au, or
And a magnetic transducer comprising at least one element selected from the group of elements consisting of the platinum group. 17. The magnetic transducer according to claim 16, wherein the atomic content of the additional element in the CrMn alloy is in the range of 0 to 30 (atomic%). 18. A magnetic transducer including a magnetic recording medium for recording information, a ferromagnetic material, and an antiferromagnetic material which is in close contact with the ferromagnetic material and at least a part of which has a crystal structure of a body-centered cubic lattice. A magnetic head for reading or writing the information, an actuator means for moving the magnetic head to a predetermined position on the magnetic recording medium, and an actuator for transmitting and receiving the information read or written by the magnetic head. A magnetic recording device comprising: a control unit that controls the movement of the data recording unit.