JPH0794473A - Pre-treating method for forming conductive layer - Google Patents

Abstract

PURPOSE:To provide a pre-treating method for dry etching the surface of a semiconductor substrate without giving any damage to the substrate so that a semiconductor device can be manufactured based on a design rule. CONSTITUTION:The surface of a semiconductor substrate 10 is etched by using an etching device provided with a soil 13 on the outside of a chamber 12 as a plasma generating source and setting a nonoxidative atmosphere in the chamber after setting the substrate 10 in the chamber 12, and then, generating plasma having a density of 10X10<11> to 1X10<14>cm<-3> in the chamber by introducing an etching gas 14 into the chamber 12 while a voltage of 10-250V is applied across the substrate 10. Therefore, the surface of the substrate 10 can be dry-etched without giving any damage to the substrate 10 by suppressing the energy of the plasma made incident to the surface of the substrate 10 at a low level.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pretreatment method for forming a conductive layer on a semiconductor substrate in manufacturing a semiconductor device.

[0002]

2. Description of the Related Art In the process of manufacturing a semiconductor device, in order to obtain a good contact between a semiconductor substrate and a conductive layer,
As a pretreatment for forming a conductive layer on a semiconductor substrate, a natural oxide film on the surface of the semiconductor substrate is removed.

A pretreatment method for forming a conductive layer on a semiconductor substrate having a contact hole will be described below with reference to FIG. As shown in FIG. 5A, the semiconductor substrate 50
On top of the gate electrode 503 via the gate insulating film 502.
Are formed. Diffusion layers 504 are formed on the semiconductor substrate 501 on both sides of the gate electrode 503. Then, an interlayer insulating film 505 is formed on the upper surface of the semiconductor substrate 501 so as to cover the gate electrode 503. A resist pattern 50 is formed on the upper surface of the interlayer insulating film 505.
6 is formed. And this resist pattern 5
The diffusion layer 504 was etched by etching using 06 as a mask.
A contact hole 507 having an inner diameter r ₁ is formed above the gate electrode 503, and a contact hole 50 having an inner diameter r ₂ is formed above the gate electrode 503.
8 is formed. A natural oxide film 509 is formed on the surface of the semiconductor substrate 501, which is the bottom of the contact hole 507 formed as described above.

Before forming a conductive layer inside the contact hole 507, as shown in FIG. 5B, the resist pattern 506 is first removed by ashing. Next, the natural oxide film 509 at the bottom of the contact hole 507 is removed by dilute hydrofluoric acid cleaning. Thus, when a conductive layer (not shown) is formed inside the contact hole 507 in the next step, good contact between the conductive layer and the diffusion layer 504 can be obtained.

[0005]

However, the above method has the following problems. That is, in the diluted hydrofluoric acid cleaning, the etching of the oxide film proceeds isotropically.
Therefore, as shown in FIG.
Natural oxide film 5 on the surface of semiconductor substrate 501, which is the bottom of
When removing 09, the interlayer insulating film 505 on the sidewalls of the contact hole 507 and the connection hole 508 is also etched. Therefore, after the natural oxide film 509 is removed, the inner diameters r of the contact hole 507 and the connection hole 508 are
₁ and r ₂ expand to R ₁ and R ₂ . Particularly in recent years, the dimensional rule of the semiconductor process has been miniaturized and the diameter of the contact hole has been miniaturized with the high integration of the semiconductor device.
For this reason, in devices that have been miniaturized, the inner diameters R ₁ and R ₂ of the contact hole 507 and the connection hole 508 are
The expansion of R ₂ has a great influence on the deterioration of the accuracy of the dimensional rule.

Further, the miniaturized contact hole 50
In No. 7, the effect of cleaning with dilute hydrofluoric acid at the bottom is reduced.
Therefore, the natural oxide film 509 cannot be removed sufficiently, or the inner diameters R ₁ and R _{2 of the} contact hole 507 and the connection hole 508 are further increased by performing sufficient cleaning to remove the natural oxide film 509. To do.

For the above reasons, there is a strong demand for a dry process as a pretreatment for forming a conductive layer in order to reduce the size rule. However, when the native oxide film 509 on the surface of the semiconductor substrate 501 is removed by anisotropic etching by a dry process, the semiconductor substrate 501 is damaged by the collision of plasma with the surface of the semiconductor substrate 501, and the junction leak increases. Further, in this process, the gate electrode 503 is directly exposed to the plasma. Then, since the gate electrode 503 is in an insulating state, charges are accumulated. The accumulated charges cause deterioration of the withstand voltage in the gate oxide film 502 thinned by miniaturization.

Therefore, the present invention provides a pretreatment method for forming a conductive layer that solves the above problems. Further, it is an object of the present invention to enable the manufacture of a semiconductor device based on the dimensional rule in the process of advanced miniaturization.

[0009]

The present invention is a pretreatment method carried out before forming a conductive layer on a semiconductor substrate. First of all
In the invention described above, an etching apparatus having a plasma generation source provided outside the chamber is used, a semiconductor substrate is placed in the chamber to create a non-oxidizing atmosphere in the chamber, and the semiconductor substrate is supplied with a voltage of 10V to 250V. A voltage is applied and an etching gas is introduced into the chamber to generate plasma, and the surface of the semiconductor substrate is etched by the plasma. And in the above-mentioned second invention,
The density of plasma generated in the chamber is 1 × 10 ¹¹ ~
It is 1 × 10 ¹⁴ cm ⁻³ .

Next, a second aspect of the present invention is to place a semiconductor substrate in a chamber of an etching apparatus of a counter electrode type so as to create a non-oxidizing atmosphere in the chamber.
A voltage of V to 250 V is applied and an etching gas is introduced into the chamber to generate plasma, and the surface of the semiconductor substrate is etched by the plasma. Further, in the above-mentioned first invention, the density of the plasma generated in the chamber is 1 × 10 ⁸ to 1 × 10 ¹¹ cm.
^-3 .

[0011]

In the first aspect of the invention, the voltage applied to the semiconductor substrate during etching is 10 to 250 V, and the incident energy of plasma on the semiconductor substrate can be suppressed low.
Therefore, in the semiconductor substrate in which the surface of the semiconductor substrate is etched without damaging the semiconductor substrate, the connection hole is formed on the gate electrode, and the contact hole is formed, the charge due to the incidence of plasma on the gate electrode The accumulated amount of is reduced. Furthermore, since this etching uses an etching apparatus having a plasma generation source provided outside the chamber, the plasma density in the chamber is set regardless of the voltage applied to the semiconductor substrate. Then, the etching rate can be increased by setting the plasma density to a high density of 1 × 10 ¹¹ to 1 × 10 ¹⁴ cm ⁻³ .

Next, in the second invention, the voltage applied to the semiconductor substrate during etching is 100 to 250 V, and the incident energy of the plasma on the semiconductor substrate is the same as in the first embodiment. Can be kept low. In the counter electrode type etching apparatus used for etching, the plasma density in the chamber is reduced to 1 by applying the voltage in the above range.
It becomes x10 ⁸ to 1x10 ¹¹ cm ^-3 . The plasma etches the surface of the semiconductor substrate without damaging the semiconductor substrate. Further, in the semiconductor substrate having the contact hole and the contact hole formed on the gate electrode, the amount of accumulated charge due to the incidence of plasma on the gate electrode is reduced.

[0013]

Embodiments of the present invention will be described below with reference to the drawings. First, in the first embodiment, the ICP shown in FIG.
A case will be described in which the natural oxide film on the surface of the semiconductor substrate is removed by the ICP etching apparatus 1 using the (Inductively Coupled Plasma) type plasma source as a pretreatment for forming the conductive layer. As shown in FIG. 1, the ICP etching apparatus 1 includes an electrode 11 on which a semiconductor substrate 10 to be processed is mounted.
And a chamber 12 capable of accommodating the electrode 11 and keeping the inside in a non-oxidizing atmosphere, and a coil 13 wound around the outer periphery of the chamber 12 and serving as a plasma generation source. The chamber 12 has an etching gas 14 inside.
A gas introducing pipe 15 for introducing is connected. Electrode 11
An RF power source 16 is connected to the. And coil 13
An RF power source 17 is connected to the.

When the ICP etching apparatus 1 configured as described above is operated, the semiconductor substrate 1 is attached to the electrode 11.
0 is placed and the chamber 12 is kept in a non-oxidizing atmosphere. Then, the etching gas 14 is introduced into the chamber 12 through the gas introduction pipe 15, the RF voltage is applied from the RF power supply 16 to the electrode 11, and the RF power is supplied from the RF power supply 17 to the coil 13. As a result, the RF voltage is applied to the substrate 10, and the etching gas 14 is turned into plasma in the chamber 12 by the RF power supplied to the coil 13. Then, this plasma is incident on the surface of the semiconductor substrate 10 to which the RF voltage is applied, and the semiconductor substrate 10
Etching the surface of. Here, the control of the RF voltage applied to the semiconductor substrate 10 is performed by a control system (not shown) provided in the RF power supply 16. And chamber 1
The control of the plasma density generated in 2 is performed by a control system (not shown) provided in the RF power source 17. In this ICP etching apparatus 1, the control of the RF voltage applied to the semiconductor substrate 10 and the control of plasma generation are independently performed as described above. Therefore, the plasma density in the chamber 12 can be set to a high density of 1 × 10 ¹¹ to 1 × 10 ¹⁴ cm ⁻³ .

When the natural oxide film on the surface of the semiconductor substrate 10 is removed by the ICP etching apparatus 1 having the above-mentioned structure as a pretreatment for forming a conductive layer, the following steps are performed. First,
Argon (Ar) gas is used as the etching gas 14. Then, as an example of the etching conditions, the flow rate of the etching gas 14 is Ar = 25 sccm, the chamber 12 is
The atmosphere is set to 0.13 Pa, the voltage applied to the RF power supply 16 is set to 100 V, and the power supplied to the coil 13 is set to 1 kW.

In the pretreatment method for forming the conductive layer, a voltage of 100 V is applied to the semiconductor substrate. Therefore, the incident energy of plasma on the semiconductor substrate is suppressed to be low.
Therefore, the natural oxide film on the surface of the semiconductor substrate is removed by etching without damaging the semiconductor substrate.
Furthermore, since the plasma density in the chamber is high, pretreatment can be performed while maintaining a certain etching rate.

Next, in the second embodiment, the natural oxide film on the surface of the semiconductor substrate 10 is removed as a pretreatment for forming the conductive layer by the ICP etching apparatus 1 shown in FIG. 1 in the first embodiment. Another example will be described. In this embodiment, HF gas is used as the etching gas 14. As an example of the etching conditions, the flow rate of the etching gas 14 is HF = 25 s.
ccm, atmosphere in chamber 12 is 0.13 Pa, RF
The voltage applied to the power supply 16 is set to 50 V, and the power supplied to the coil 13 is set to 1 kW.

In the pretreatment method for forming the conductive layer, a voltage of 50 V is applied to the semiconductor substrate. Therefore, the energy of the plasma incident on the semiconductor substrate is suppressed to be lower than that in the first embodiment. Since a halogen gas is used as an etching gas, the semiconductor substrate surface is chemically etched. Therefore, the natural oxide film on the surface of the semiconductor substrate is removed by etching without damaging the semiconductor substrate, and the pretreatment is performed while keeping the etching rate to some extent.

In the third embodiment, TCP (Tr
TC using a plasma source of ansfer Coupled Plasma type
A case will be described in which the P etching apparatus 2 removes the natural oxide film on the surface of the semiconductor substrate as a pretreatment for forming the conductive layer. As shown in FIG. 2, the TCP etching apparatus 2 includes an electrode 21 on which a semiconductor substrate 10 to be processed is mounted, and an electrode 21.
And a chamber 22 capable of accommodating the electrode 2 to keep the inside in a non-oxidizing atmosphere, and the electrode 2 on the upper outside of the chamber 22.
1 and a coil 23 serving as a plasma generation source, which is provided in a spiral shape of a flat plate in a state of facing 1. Chamber 2
A gas introducing pipe 25 for introducing the etching gas 24 is connected to the inside 2. An RF power source 26 is connected to the electrode 21. Then, the coil 23 has an RF power source 27.
Are connected.

When the TCP etching apparatus 2 having the above-described structure is operated, the semiconductor substrate 1 is attached to the electrode 21.
0 is placed and the inside of the chamber 22 is maintained in a non-oxidizing atmosphere. Then, the etching gas 24 is introduced into the chamber 22 from the gas introduction pipe 25, the RF voltage is applied to the electrode 21 from the RF power source 26, and the coil 23 is applied from the RF power source 27.
RF power to the. By this, the RF
RF applied to the coil 23 while voltage is applied
The etching gas 24 is turned into plasma in the chamber 22 by the electric power. Then, this plasma enters the surface of the semiconductor substrate 10 to which the RF voltage is applied, and the semiconductor substrate 10
Etching the surface of. Here, the control of the RF voltage applied to the semiconductor substrate 10 is performed by a control system (not shown) provided in the RF power source 26. And chamber 2
The control of the plasma density generated in 2 is performed by a control system (not shown) provided in the RF power source 27. In this TCP etching apparatus 2, the ICP shown in FIG. 1 is used.
Similar to the etching device, the plasma generation is controlled independently. Therefore, it is possible to set the plasma density in the chamber 22 to a high density of 1 × 10 ¹¹ to 1 × 10 ¹⁴ cm ⁻³ .

When the native oxide film on the surface of the semiconductor substrate 10 is removed by the TCP etching apparatus 2 having the above structure as a pretreatment for forming the conductive layer, the etching gas 24 is nitrogen trifluoride (NF ₃ ) and hydrogen. A mixed gas with a gas (H ₂ ) is used. As an example of etching conditions, the flow rate of the etching gas 24 is NF ₃ / H ₂ = 25/25 sccm, the atmosphere in the chamber 22 is 0.13 Pa, the voltage applied to the RF power supply 26 is 50 V, and the power supplied to the coil 23 is power. 1
Set to kW.

In the pretreatment method for forming the conductive layer, a voltage of 50 V is applied to the semiconductor substrate. Therefore, the incident energy of plasma on the semiconductor substrate is suppressed to be low. Further, since the plasma density in the chamber is high and the etching is chemically performed by using the halogen gas, a certain etching rate can be obtained without damaging the semiconductor substrate as in the second embodiment. The natural oxide film on the surface of the semiconductor substrate can be removed by etching.

In the fourth embodiment, ECR (El
A case will be described in which a natural oxide film on the surface of a semiconductor substrate is removed as a pretreatment for forming a conductive layer by an ECR plasma etching apparatus 3 using a plasma generation source of an ectron Cyclotoron Resonance) system. As shown in FIG. 3, the ECR plasma etching apparatus 3 includes an electrode 31 on which the semiconductor substrate 10 to be processed is mounted, a chamber 32 for accommodating the electrode 31 and keeping the inside in a non-oxidizing atmosphere, and a chamber 32. Three
2 is connected via a quartz window 33 to the inside of the chamber 32 to transmit the microwave 34, and an electromagnet 36 arranged on the outer periphery of the chamber 32. A gas introduction pipe 38 for introducing the etching gas 37 is connected to the chamber 32. An RF power source 39 that applies a voltage to the semiconductor substrate 10 is connected to the electrode 31.

When the ECR plasma etching apparatus 3 configured as described above is operated, the semiconductor substrate 10 is placed on the electrode 31 and the chamber 32 is kept in a non-oxidizing atmosphere. Next, the etching gas 37 is introduced into the chamber 32 through the gas introduction pipe 38. And RF power source 3
RF voltage is applied from 9 to the electrode 31 and the waveguide 35
To supply a microwave 34 into the chamber 32, and an electromagnet 36 forms an electric field in the chamber 32. As a result, the RF voltage is applied to the semiconductor substrate 10, and the chamber 32 is generated by the electric field formed by the electromagnet 36 and the microwave 34 supplied from the waveguide 35.
The etching gas 37 is turned into plasma inside. And
This plasma is incident on the surface of the semiconductor substrate 10 to which the RF voltage is applied, and the surface of the semiconductor substrate 10 is etched. Here, the control of the RF voltage applied to the semiconductor substrate 10 is performed by a control system (not shown) provided in the RF power source 39. The control of the plasma density generated in the chamber 32 is performed by a microwave control system (not shown) provided in the waveguide 35. In this ECR plasma etching apparatus 3, control of plasma generation is independently performed like the ICP etching apparatus and the TCP etching apparatus. Therefore, it is possible to set the plasma density in the chamber 32 to a high density of 1 × 10 ¹¹ to 1 × 10 ¹⁴ cm ⁻³ .

By the ECR plasma etching apparatus 3 having the above-described structure, the semiconductor substrate 10 is used as a pretreatment for forming a conductive layer.
When the natural oxide film on the surface is removed, a mixed gas of sulfur hexafluoride (SF ₆ ) and hydrogen gas (H ₂ ) is used as the etching gas 37. As an example of the etching condition, the flow rate of the etching gas 37 is SF ₆ / H ₂ = 25 / 25sc.
cm, the atmosphere in the chamber 32 is 0.13 Pa, the voltage applied to the RF power source 39 is 50 V, and the microwave power is 90 cm.
Set to 0W.

In the pretreatment method for forming the conductive layer, a voltage of 50 V is applied to the semiconductor substrate. Therefore, the incident energy of plasma on the semiconductor substrate is suppressed to be low. Therefore, the natural oxide film on the surface of the semiconductor substrate is removed by etching without damaging the semiconductor substrate. Furthermore, since the plasma density in the chamber is high and the chemical etching is performed using a halogen gas, it is possible to perform pretreatment while maintaining a certain etching rate.

In the pretreatment methods for forming the conductive layer shown in the first to fourth embodiments, the etching conditions were set so that the semiconductor substrate was applied with voltages of 100V and 50V. However, the present invention is not limited to this, and the semiconductor substrate may have 10 V
The etching conditions may be such that a voltage of 250 V is applied.

In the fifth embodiment, the high frequency (R
F) A case where a natural oxide film on the surface of a semiconductor substrate is removed as a pretreatment for forming a conductive layer by the counter electrode type plasma etching apparatus 4 using a plasma source by electric discharge will be described. As shown in FIG. 4, the counter electrode type plasma etching apparatus 4 includes an electrode 4 on which a semiconductor substrate 10 to be processed is mounted.
1, an electrode 42 arranged substantially parallel to the electrode 41 so as to face the electrode 41, and a chamber 43 capable of accommodating the electrode 41 and the electrode 42 and maintaining the inside in a non-oxidizing atmosphere. . A gas introduction pipe 45 for introducing the etching gas 44 is connected to the chamber 43.
An RF power source 46 is connected to the electrode 41, and the electrode 4
2 is grounded.

When the counter electrode type plasma etching apparatus 4 having the above structure is operated, the semiconductor substrate 1 is attached to the electrode 41.
0 is placed and the inside of the chamber 43 is maintained in a non-oxidizing atmosphere. Then, the etching gas 44 is introduced into the chamber 43 through the gas introduction pipe 45, and the RF voltage is applied from the RF power supply 46 to the electrode 41. As a result, an RF voltage is applied to the semiconductor base material 10, and the etching gas 44 is discharged in the chamber 43 by this RF voltage to generate plasma. Then, this plasma is incident on the surface of the semiconductor substrate 10 to which the RF voltage is applied, and the semiconductor substrate 10
Etching the surface of. Here, the control of the RF voltage applied to the substrate 10 and the control of the plasma density generated in the chamber 43 are performed by a control system (not shown) provided in the RF power source 46. In this counter electrode type plasma etching apparatus 4, the plasma density in the chamber 43 is 1 ×
It is set to 10 ⁸ to 1 × 10 ¹¹ cm ^-3 .

When the natural oxide film on the surface of the semiconductor substrate 10 is removed by the counter electrode type plasma etching apparatus 4 having the above-mentioned structure as a pretreatment for forming the conductive layer, the following steps are performed. First, the etching gas 44 is argon (Ar).
Use gas. Then, as an example of the etching conditions, the flow rate of the etching gas 44 is Ar = 50 sccm,
The atmosphere in the chamber 43 is set to 0.67 Pa, the RF power source 46
The voltage applied to is set to 200V.

In the pretreatment method for forming the conductive layer, a voltage of 200 V is applied to the semiconductor substrate. Therefore, the incident energy of plasma on the surface of the semiconductor substrate is suppressed to be low. Therefore, the natural oxide film on the surface of the semiconductor substrate is removed by etching without damaging the semiconductor substrate.

Next, in a sixth embodiment, the counter electrode type plasma etching apparatus 4 shown in FIG. 4 in the above fifth embodiment.
Another example of removing the natural oxide film on the surface of the semiconductor substrate 10 will be described as a pretreatment for forming the conductive layer. In the sixth embodiment, a mixed gas of hydrogen fluoride (HF) and methyl alcohol (CH ₃ OH) is used as the etching gas 44.
Then, as an example of the etching conditions, the flow rate of the etching gas 44 is HF / CH ₃ OH = 25 / 25scc.
m, the atmosphere in the chamber 43 is set to 0.67 Pa, and the voltage applied to the RF power supply 46 is set to 100V.

In the pretreatment method for forming the conductive layer, a voltage of 100 V is applied to the semiconductor substrate. Therefore, the incident energy of the plasma on the surface of the semiconductor substrate is suppressed to be lower than that in the fifth embodiment. Since a halogen gas is used as an etching gas, the semiconductor substrate surface is chemically etched. Therefore, the fifth
Similar to the embodiment described above, the natural oxide film on the surface is removed by etching without damaging the semiconductor substrate, and since it is chemical etching, pretreatment is performed without lowering the etching rate.

In the pretreatment method for forming the conductive layer shown in the fifth and sixth embodiments, the semiconductor substrate is provided with 200V and 100V.
The etching conditions were set so that a V voltage was applied.
However, the present invention is not limited to this, and is not limited to semiconductor substrates.
The etching conditions may be such that a voltage of 00V to 250V is applied. At that time, by using a halogen gas as an etching gas, the etching rate can be improved.

After the pretreatments for forming the conductive layer shown in the first to sixth embodiments are completed, the chamber in which the semiconductor base material is placed is made into a non-oxidizing atmosphere, and the chamber is further continued. Then, a gas for forming a conductive layer is introduced into this chamber, or it is transferred to a sputtering chamber for forming a conductive layer which is connected under high vacuum, and a film forming gas is introduced into this chamber, A conductive layer is formed on the surface of the semiconductor substrate.
As a result, a conductive layer is formed on the upper surface of the semiconductor base material from which the natural oxide film has been removed, and good contact properties can be obtained between the semiconductor base material and the conductive layer.

[0036]

As described above, in the pretreatment method for forming a conductive layer according to the first aspect of the invention, a low voltage of 10 to 250 V is applied to a semiconductor substrate to carry out dry etching, so that the etching surface is exposed. The incident energy of the plasma can be suppressed to a low level. Therefore, the surface of the semiconductor base material can be etched without damaging the base material, and in the substrate in which the contact hole and the connection hole on the gate electrode are formed, the amount of charge accumulated in the gate electrode is reduced. Therefore, deterioration of the withstand voltage of the gate insulating film can be prevented. Furthermore, 1 × 10 ¹¹ to 1 × 1
By performing dry etching with a high density plasma of 0 ¹⁴ , it is possible to keep the etching rate to a certain degree. Then, in the pretreatment method for forming a conductive layer of the second invention, by applying a low voltage of 100 to 250 V to the semiconductor substrate and performing dry etching,
The surface of the semiconductor substrate can be etched without damaging the semiconductor substrate in the same manner as in the first aspect of the invention, and in the substrate in which the contact hole and the connection hole on the gate electrode are formed, the charge to the gate electrode can be prevented. Since the amount of accumulation can be reduced, deterioration of the withstand voltage of the gate insulating film can be prevented. Therefore, according to the first and second aspects of the present invention, the surface of the semiconductor substrate including the bottom of the contact hole can be etched by the dry process, so that the semiconductor based on the dimensional rule in the process of advanced miniaturization. Allows manufacturing of the device.

[Brief description of drawings]

FIG. 1 is a configuration diagram of an ICP etching apparatus.

FIG. 2 is a configuration diagram of a TCP etching apparatus.

FIG. 3 is a configuration diagram of an ECR plasma etching apparatus.

FIG. 4 is a configuration diagram of a counter electrode type plasma etching apparatus.

FIG. 5 is a schematic sectional view illustrating a problem of a conventional example.

[Explanation of symbols]

 1 ICP etching device 2 TCP etching device 3 ECR plasma etching device 4 counter electrode type plasma etching device 10 semiconductor substrate 12, 22, 32, 43 chamber 13, 23 coil (plasma generation source) 14, 24, 37, 44 etching gas 35 Waveguide (Plasma generation source) 41, 42 Electrodes

Claims (4)

[Claims] 1. Before forming a conductive layer on a semiconductor substrate,
A pretreatment method performed by an etching apparatus provided with a plasma generation source outside the chamber, wherein a semiconductor substrate is placed in the chamber of the etching apparatus to create a non-oxidizing atmosphere in the chamber, A pretreatment for forming a conductive layer, characterized in that a voltage of 10 V to 250 V is applied to the material and an etching gas is introduced into the chamber to generate plasma, and the surface of the semiconductor substrate is etched by the plasma. Method. 2. The pretreatment method for forming a conductive layer according to claim 1, wherein the plasma density generated in the chamber is 1 × 10 ^11.
A pretreatment method for forming a conductive layer, wherein the pretreatment is 1 × 10 ¹⁴ cm ⁻³ . 3. Before depositing a conductive layer on a semiconductor substrate,
A pretreatment method performed by a counter electrode type etching apparatus, wherein a semiconductor substrate is placed in a chamber of the etching apparatus to create a non-oxidizing atmosphere in the chamber, and a voltage of 100 V to 250 V is applied to the semiconductor substrate. And a plasma is generated by introducing an etching gas into the chamber, and the surface of the semiconductor substrate is etched by the plasma. 4. The pretreatment method for forming a conductive layer according to claim 3, wherein the density of the plasma generated in the chamber is 1 × 10 5.
^A pretreatment method for forming a conductive layer, wherein the pretreatment is ⁸ to 1 × 10 ¹¹ cm ⁻³ .