JPH0793808A - Optical disk - Google Patents
Optical diskInfo
- Publication number
- JPH0793808A JPH0793808A JP5234492A JP23449293A JPH0793808A JP H0793808 A JPH0793808 A JP H0793808A JP 5234492 A JP5234492 A JP 5234492A JP 23449293 A JP23449293 A JP 23449293A JP H0793808 A JPH0793808 A JP H0793808A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- recording film
- film
- reflectance
- optical disc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、反射率変化により情報
を記録する光ディスクに係り特に、任意の情報を書き込
むのに好適な光ディスクに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical disc for recording information by changing reflectance, and more particularly to an optical disc suitable for writing arbitrary information.
【０００２】[0002]
【従来の技術】レーザ光の照射により情報の記録再生が
可能な光ディスクとして、情報記録を光学的特性の変化
として記録する方法が提案されている。その中でも、特
開昭57-159692号公報、特開昭57-186243号公報に記載の
ように、レーザ光に対して光吸収性がよく、光を熱に変
換する効果を有する光吸収層と、加熱により光学特性が
変化する相転移層の２層膜により記録膜を構成した光デ
ィスクがある。2. Description of the Related Art As an optical disk capable of recording and reproducing information by irradiating a laser beam, a method of recording information as a change in optical characteristics has been proposed. Among them, as described in JP-A-57-159692 and JP-A-57-186243, a light-absorbing layer having a good light-absorbing property for laser light and having an effect of converting light into heat, There is an optical disc in which a recording film is composed of a two-layer film of a phase transition layer whose optical characteristics change by heating.
【０００３】[0003]
【発明が解決しようとする課題】従来技術の光学的に透
明な第１の記録膜と、光吸収性の高い第２の記録膜を順
次積層し、これにレーザ光を照射して干渉効果を消滅さ
せることにより反射率を変化させ情報の記録を行う光光
ディスクにおいては、以下に述べるように２層膜間で反
応が生じ、反射率が経時変化するという問題がある。こ
の反射率変化には、２つのモードがあり、それは、環
境放置による変化、情報を再生する際のレーザ光照射
による変化である。The optically transparent first recording film of the prior art and the second recording film of high light absorption are sequentially laminated, and laser light is radiated on the first recording film to obtain an interference effect. In an optical optical disc in which information is recorded by changing the reflectance by erasing the light, a reaction occurs between the two-layer films as described below, and there is a problem that the reflectance changes with time. There are two modes for this change in reflectance, which are changes due to exposure to the environment and changes due to laser light irradiation when information is reproduced.
【０００４】環境放置による変化では、上述の２層膜
を例えば40℃95％相対湿度環境下に放置した場合、２層
膜間で相互拡散が生じる。この反応により２層膜界面に
光学定数が第１、第２層の値間で連続的に変化した拡散
層が形成され、これにより干渉効果が小さくなり、反射
率が変化することになる。この反射率の変化方向は、情
報を記録した場合に変化する方向と同じであり、このこ
とは、記録部分と未記録部分の反射率差が小さくなるこ
とと対応し、記録信号の品質を低下させることとなる。
このモードは、記録情報品質の長期的な安定性を決定す
る。In the change caused by being left in the environment, when the above-mentioned two-layer film is left in an environment of 40 ° C. and 95% relative humidity, mutual diffusion occurs between the two-layer films. Due to this reaction, a diffusion layer whose optical constant continuously changes between the values of the first and second layers is formed at the interface of the two-layer film, which reduces the interference effect and changes the reflectance. The direction of change of the reflectance is the same as the direction of change when information is recorded. This corresponds to the reduction of the reflectance difference between the recorded portion and the unrecorded portion, and the quality of the recording signal is deteriorated. Will be made.
This mode determines the long-term stability of recorded information quality.
【０００５】情報を再生する際のレーザ光照射による
変化は、記録情報を再生する際に照射するレーザ光の熱
によるものである。この熱は、記録再生時のレーザスポ
ットと光ディスクの相対速度により変化する。この様子
を模式的に図５に示す。この図のように、相対速度の高
低によって信号記録に要するレーザパワーは異なり、相
対速度が低くなるに従い記録パワーも低くなり、再生レ
ーザパワーと記録レーザパワー値の差が小さくなってく
る。これによって、再生レーザ光により情報の記録（消
去に対応）はされないものの、２層界面は高温になり、
相互拡散が促進されることとなる。この結果、反射率変
化が生じ、と同様、信号品質を低下させる。このモー
ドは、記録信号品質の短期的安定性を決定する。The change due to the laser light irradiation when reproducing the information is due to the heat of the laser light irradiated when the recorded information is reproduced. This heat changes depending on the relative speed of the laser spot and the optical disc during recording and reproduction. This state is schematically shown in FIG. As shown in this figure, the laser power required for signal recording differs depending on the relative speed. The lower the relative speed, the lower the recording power, and the smaller the difference between the reproduction laser power and the recording laser power value. As a result, although information is not recorded (corresponding to erasing) by the reproduction laser beam, the temperature of the interface between the two layers becomes high,
Mutual diffusion will be promoted. As a result, a reflectance change occurs, and similarly, the signal quality deteriorates. This mode determines the short term stability of the recorded signal quality.
【０００６】従来技術は、以上２つの反射率変化に対し
ては配慮されていなかった。The prior art has not taken into consideration the above two changes in reflectance.
【０００７】本発明の目的は、上述の問題を無くし、信
頼性の高い光ディスクを提供することにある。An object of the present invention is to eliminate the above-mentioned problems and provide a highly reliable optical disc.
【０００８】[0008]
【課題を解決するための手段】上記問題点を解決する
ために、第１と第２の記録膜の間に、第１の記録膜の構
成元素の内少なくとも１元素、第２の記録膜の構成元素
の内少なくとも１元素、またはその両者を含む拡散防止
層を形成する。更にの問題の解決するために、上記解
決策のほかに、第１の記録膜、第２の記録膜に続いて、
第１の記録膜の構成元素の内少なくとも１元素、第２の
記録膜の構成元素の内少なくとも１元素、またはその両
者を含む熱吸収層を形成することが有効となる。更に
は、拡散防止層と熱吸収層の両者を併用することが有効
となる。In order to solve the above problems, at least one of the constituent elements of the first recording film and the second recording film are provided between the first and second recording films. A diffusion prevention layer containing at least one of the constituent elements or both is formed. In order to solve further problems, in addition to the above solution, following the first recording film and the second recording film,
It is effective to form a heat absorption layer containing at least one of the constituent elements of the first recording film, at least one of the constituent elements of the second recording film, or both. Furthermore, it is effective to use both the diffusion prevention layer and the heat absorption layer in combination.
【０００９】[0009]
【作用】本発明の作用を、第１の記録膜をＳｂ−Ｓｅ、
第２の記録膜をＢｉとした場合について詳しく以下に述
べる。In the operation of the present invention, the first recording film is made of Sb-Se,
The case where the second recording film is Bi will be described in detail below.
【００１０】先ず、この２層膜による記録メカニズムを
述べる。第１と第２の記録膜は、記録レーザ光照射によ
り、結晶化反応を伴う相互拡散を生じる。結晶化反応の
結果生成されるのは、Ｂｉ−Ｓｅ系結晶である。またこ
の結晶化を伴う相互拡散は、ＳｂとＢｉの濃度ピーク位
置が、記録前後で反転するように生じる。図１２，１３
に記録前後の膜厚方向の元素分布を示す。これから、記
録後の元素分布において、ＳｂがＢｉ層側に、ＢｉがＳ
ｂ−Ｓｅ層側にそのピークが移動している。この結果、
２層間の界面（光学定数の急峻な変化）が無くなり、干
渉効果は消滅する。これにより、反射率に変化を生じ
る。情報の記録は、上記反応の生じた部分とそうでない
部分の反射率の違いにより行う。First, the recording mechanism by the two-layer film will be described. Irradiation of the recording laser light causes mutual diffusion of the first and second recording films accompanied by a crystallization reaction. Bi-Se based crystals are generated as a result of the crystallization reaction. Further, the mutual diffusion accompanied by the crystallization occurs such that the concentration peak positions of Sb and Bi are inverted before and after recording. 12 and 13
Shows the element distribution in the film thickness direction before and after recording. From this, in the element distribution after recording, Sb is on the Bi layer side and Bi is S
The peak has moved to the b-Se layer side. As a result,
The interface between the two layers (abrupt change in optical constant) disappears, and the interference effect disappears. This causes a change in reflectance. Information is recorded by the difference in reflectance between the portion where the reaction occurs and the portion where it does not.
【００１１】ここで、第１の記録膜と第２の記録膜の間
に拡散防止層を設けることにより、記録動作以外の外部
条件による２層間の相互拡散速度を小さくすることが可
能となる。この拡散防止層には、単体で安定な層、例え
ばSiO2,Al2O3等を形成することが考えられる。これによ
っても、２層間の拡散速度は抑えられるものの、記録動
作による２層間の変化が充分に生じないため、記録信号
の対雑音比（以下Ｃ／Ｎと記す）が低下する。そこで、
本発明者等は、この拡散防止層を各層の構成元素から構
成した。それらは、Bi-Sb,Sb,Se,Bi-Seである。これら
は、記録時の２層間で生じる反応を殆ど阻害することな
く、かつ環境放置した場合の反射率変化を低減出来るこ
とを見出した。Here, by providing the diffusion prevention layer between the first recording film and the second recording film, it is possible to reduce the mutual diffusion rate between the two layers due to external conditions other than the recording operation. It is conceivable that a stable layer such as SiO 2 or Al 2 O 3 is formed by itself as the diffusion prevention layer. Although this also suppresses the diffusion speed between the two layers, the change between the two layers due to the recording operation does not sufficiently occur, so that the noise ratio (hereinafter referred to as C / N) of the recording signal decreases. Therefore,
The present inventors constructed this diffusion prevention layer from the constituent elements of each layer. They are Bi-Sb, Sb, Se, Bi-Se. It has been found that these hardly reduce the reaction that occurs between the two layers during recording and can reduce the change in reflectance when left in the environment.
【００１２】また、第２の記録膜に続いて熱吸収層を形
成することにより、再生レーザ光による熱は該熱吸収層
に吸収され、第１の記録膜と第２の記録膜界面の温度上
昇は低減される。Further, by forming the heat absorbing layer after the second recording film, the heat generated by the reproducing laser beam is absorbed in the heat absorbing layer, and the temperature at the interface between the first recording film and the second recording film is increased. The rise is reduced.
【００１３】このため、２層界面の再生光照射による励
起は低減され拡散は抑圧されることとなる。Therefore, the excitation of the two-layer interface due to the irradiation of the reproducing light is reduced, and the diffusion is suppressed.
【００１４】以上述べたように、第２の記録膜に続いて
熱吸収層を形成することにより再生レーザ光による２層
間の拡散が防止出来る。これにより２層間の拡散速度
は、各層を構成する材料が決まれば一義的に決まるもの
となる。ここで更に、第１と第２の記録膜間に、拡散防
止層を設けることにより環境放置による２層間の拡散を
防止出来、高い信頼度の光ディスクを供給出来るもので
ある。As described above, by forming the heat absorption layer subsequent to the second recording film, the diffusion between the two layers due to the reproduction laser light can be prevented. As a result, the diffusion rate between the two layers is uniquely determined if the material forming each layer is determined. Further, by providing a diffusion prevention layer between the first and second recording films, diffusion between the two layers due to being left in the environment can be prevented, and an optical disc with high reliability can be supplied.
【００１５】[0015]
【実施例】以下本発明の実施例について説明する。EXAMPLES Examples of the present invention will be described below.
【００１６】実施例１ 図１に、本発明における記録膜の構成を示す。図１に示
すように、光透過性の基板あるいはアクリル樹脂等の樹
脂基板１上に、書き込み光、例えば波長830nmの半導体
レーザ光に対してその光吸収性が小さい、Sb2Se3、膜厚
33nmからなる第１の記録膜２を形成する。この上に、拡
散防止層４としてBi2Se3、そして、第２の記録膜３とし
て、Biを30nm順次形成する。これに紫外線硬化樹脂をス
ピンコートし硬化後、同様な構成の基板と張り合わせ
る。Example 1 FIG. 1 shows the structure of a recording film according to the present invention. As shown in FIG. 1, a light transmissive substrate or a resin substrate 1 such as an acrylic resin has a small light absorptivity for writing light, for example, semiconductor laser light having a wavelength of 830 nm, Sb 2 Se 3 , film thickness
A first recording film 2 of 33 nm is formed. On this, Bi 2 Se 3 as a diffusion prevention layer 4 and Bi as a second recording film 3 are sequentially formed in a thickness of 30 nm. An ultraviolet curable resin is spin-coated on this and cured, and then bonded to a substrate having a similar structure.
【００１７】第１の記録膜を33nm、第２の記録膜を25nm
として、拡散層の膜厚を50Åとした場合のＣ／Ｎ（基板
回転数を1800rpm、記録半径60mm、再生レーザパワーは
1.2mWとし、記録信号を5MHz）は、55dBであった。図７
には、恒温高湿（60℃95%相対湿度)環境に放置した場合
の反射率の経時変化を示す。反射率は、10000時間経過
後も反射率の上昇は５％以下となる。この時、放置時間
０時間に記録した信号を再生した時のＣ／Ｎ低下は２dB
であった。The first recording film has a thickness of 33 nm, and the second recording film has a thickness of 25 nm.
C / N (substrate rotation speed is 1800 rpm, recording radius is 60 mm, reproduction laser power is
The recording signal was 5 mHz) at 1.2 mW and 55 dB. Figure 7
Shows the change with time in reflectance when left in a constant temperature and high humidity environment (60 ° C, 95% relative humidity). Regarding the reflectance, the increase in reflectance is 5% or less even after 10,000 hours have passed. At this time, the C / N drop is 2 dB when the signal recorded when left for 0 hours is reproduced.
Met.
【００１８】尚本実施例においては、拡散防止層として
Bi2Se3を用いたが、この他Bi2Se，Bi1Se1，Sb-Bi，Seを
用いても、その効果は変わらない。In this embodiment, as the diffusion prevention layer,
Although Bi 2 Se 3 is used, the effect is not changed even if Bi 2 Se, Bi 1 Se 1 , Sb-Bi, and Se are used.
【００１９】更に、第１の記録膜にSb2Se3、第２の記録
膜にSn,In,Pbを用いた場合には、拡散防止層に、それぞ
れSnSe,InSe,PbSeを用いることにより、本実施例と同等
の効果が得られる。Further, when Sb 2 Se 3 is used for the first recording film and Sn, In, Pb is used for the second recording film, SnSe, InSe, PbSe are used for the diffusion preventing layer, respectively. The same effect as that of this embodiment can be obtained.
【００２０】実施例２ 図２に、本発明における記録膜の構成を示す。図２に示
すように、光透過性の基板あるいはアクリル樹脂等の樹
脂基板１上に、書き込み光、例えば波長830nmの半導体
レーザ光に対してその光吸収性が小さい、Sb2Se3、膜厚
33nmからなる第１の記録膜２を形成する。この上に、第
２の記録膜３として、Biを30nm、更に熱吸収層５として
Bi2Se3を順次形成する。これに紫外線硬化樹脂をスピン
コートし硬化後、同様な構成の基板と張り合わせる。Example 2 FIG. 2 shows the structure of the recording film of the present invention. As shown in FIG. 2, on a light-transmissive substrate or a resin substrate 1 such as an acrylic resin, Sb 2 Se 3 , film thickness, which has a small light absorption property for writing light, for example, semiconductor laser light having a wavelength of 830 nm
A first recording film 2 of 33 nm is formed. On top of this, as the second recording film 3, Bi is 30 nm, and further as the heat absorption layer 5.
Bi 2 Se 3 is formed sequentially. An ultraviolet curable resin is spin-coated on this and cured, and then bonded to a substrate having a similar structure.
【００２１】図８には、熱吸収層の膜厚と100時間連続
照射後の反射率、更に、最適記録パワーの関係を示す。
尚この時の基板回転数は760rpm、記録半径30mm、再生レ
ーザパワーは1.2mWである。連続照射後の反射率は、熱
吸収層の膜厚が100nm以上で1000時間後も変化が無くな
る。更に最小記録パワーも、熱吸収層の膜厚が100nm以
上で１０mW以上となり、再生時のパワーとの差は大きく
なる。FIG. 8 shows the relationship between the film thickness of the heat absorption layer, the reflectance after 100 hours of continuous irradiation, and the optimum recording power.
At this time, the substrate rotation speed is 760 rpm, the recording radius is 30 mm, and the reproduction laser power is 1.2 mW. The reflectance after continuous irradiation does not change even after 1000 hours when the thickness of the heat absorption layer is 100 nm or more. Further, the minimum recording power also becomes 10 mW or more when the thickness of the heat absorption layer is 100 nm or more, and the difference from the power during reproduction becomes large.
【００２２】尚本実施例においては、拡散防止層として
Bi2Se3を用いたが、この他Bi2Se，Bi1Se1，Sb-Bi，Sbを
用いても、その効果は変わらない。In this embodiment, as the diffusion prevention layer
Although Bi 2 Se 3 was used, the effect remains the same even if Bi 2 Se, Bi 1 Se 1 , Sb-Bi, and Sb are used.
【００２３】また、第１の記録膜にSb2Se3、第２の記録
膜にSnの場合は、Sb，SnSe、Inの場合は、Sb，InSe、Pb
の場合は、Sb，PbSeを熱吸収層として用いることによ
り、本実施例と同等の効果が得られる。When the first recording film is Sb 2 Se 3 , and the second recording film is Sn, Sb, SnSe, and In are Sb, InSe, Pb.
In this case, by using Sb and PbSe as the heat absorption layer, the same effect as that of this embodiment can be obtained.
【００２４】更に、この熱吸収層は単層には限らず、例
えばBi2Se3とBiから構成してもその効果は変わらない。Furthermore, this heat absorbing layer is not limited to a single layer, and even if it is composed of Bi 2 Se 3 and Bi, the effect does not change.
【００２５】比較例１ 図４に、比較例１における記録膜の構造を示す。基板１
上に第１の記録膜として、Sb2Se3、第２の記録膜として
Biをそれぞれ33nm,25nm形成し、これに紫外線硬化樹脂
をスピンコートし硬化後、同様な構成の基板と張り合わ
せる。これを恒温高湿（60℃95%相対湿度)環境に放置し
た場合の反射率の経時変化を図９に示す。1000時間経過
後の反射率は、２０％上昇している。この時、放置時間
０時間に記録した信号を再生した時のＣ／Ｎ低下は８dB
であった。また、基板回転数は760rpm、記録半径30mm、
再生レーザパワーは1.2mWの条件で、100時間連続照射し
た後の反射率は、３５％上昇していた。Comparative Example 1 FIG. 4 shows the structure of the recording film in Comparative Example 1. Board 1
As the first recording film on top, Sb 2 Se 3 , as the second recording film
Bi is formed to have a thickness of 33 nm and a thickness of 25 nm, and an ultraviolet curable resin is spin-coated on the Bi and cured, and then bonded to a substrate having a similar structure. FIG. 9 shows the change with time in reflectance when this was left in a constant temperature and high humidity (60 ° C., 95% relative humidity) environment. The reflectance after 1000 hours has increased by 20%. At this time, the C / N drop is 8 dB when the signal recorded when left for 0 hours is reproduced.
Met. The substrate rotation speed is 760 rpm, recording radius is 30 mm,
Under the condition that the reproducing laser power was 1.2 mW, the reflectance after continuous irradiation for 100 hours was increased by 35%.
【００２６】実施例３ 図３に、本発明における記録膜の構成を示す。図３に示
すように、光透過性の基板あるいはアクリル樹脂等の樹
脂基板１上に、書き込み光、例えば波長830nmの半導体
レーザ光に対してその光吸収性が小さい、Sb2Se3、膜厚
33nmからなる第１の記録膜２を形成する。この上に、拡
散防止層４としてBi2Se35nm、そして、第２の記録膜３
として、Biを30nm更に、熱吸収層５としてBi2Se3を100n
m順次形成する。これに紫外線硬化樹脂をスピンコート
し硬化後、同様な構成の基板と張り合わせる。Embodiment 3 FIG. 3 shows the constitution of the recording film of the present invention. As shown in FIG. 3, on a light-transmissive substrate or a resin substrate 1 such as an acrylic resin, Sb 2 Se 3 , film thickness of the light absorption property for writing light, for example, a semiconductor laser light having a wavelength of 830 nm is small.
A first recording film 2 of 33 nm is formed. On top of this, a diffusion preventing layer 4 of Bi 2 Se 3 5 nm and a second recording film 3 are formed.
As the heat absorbing layer 5 and Bi 2 Se 3 as 100n.
m Form sequentially. An ultraviolet curable resin is spin-coated on this and cured, and then bonded to a substrate having a similar structure.
【００２７】これの恒温高湿（60℃95%相対湿度)環境に
放置した場合の反射率の経時変化は、実施例２と同等の
結果が得られた。更に、連続照射時間と反射率の関係は
（基板回転数760rpm、記録半径30mm、再生レーザパワー
1.2mW）、実施例１と同等であった。With respect to the change with time of reflectance when left in an environment of constant temperature and high humidity (60 ° C., 95% relative humidity), the same results as in Example 2 were obtained. Furthermore, the relationship between the continuous irradiation time and the reflectance is (substrate rotation speed 760 rpm, recording radius 30 mm, reproduction laser power
1.2 mW), which was equivalent to that of Example 1.
【００２８】実施例４ 図３に、本発明における記録膜の構成を示す。図３に示
すように、光透過性の基板あるいはアクリル樹脂等の樹
脂基板１上に、書き込み光、例えば波長830nmの半導体
レーザ光に対してその光吸収性が小さい、Sb2Se3、膜厚
33nmからなる第１の記録膜２を形成する。この上に、拡
散防止層４としてBi2Se35nm、そして、第２の記録膜３
として、Biを30nm更に、熱吸収層５としてBiSbを100nm
順次形成する。これに紫外線硬化樹脂をスピンコートし
硬化後、同様な構成の基板と張り合わせる。Embodiment 4 FIG. 3 shows the constitution of the recording film of the present invention. As shown in FIG. 3, on a light-transmissive substrate or a resin substrate 1 such as an acrylic resin, Sb 2 Se 3 , film thickness of the light absorption property for writing light, for example, a semiconductor laser light having a wavelength of 830 nm is small.
A first recording film 2 of 33 nm is formed. On top of this, a diffusion preventing layer 4 of Bi 2 Se 3 5 nm and a second recording film 3 are formed.
As Bi as 30 nm and as the heat absorption layer 5 as BiSb as 100 nm
Form sequentially. An ultraviolet curable resin is spin-coated on this and cured, and then bonded to a substrate having a similar structure.
【００２９】これの恒温高湿（60℃95%相対湿度)環境に
放置した場合の反射率の経時変化は、実施例２と同等の
結果が得られた。更に、連続照射時間と反射率の関係は
（基板回転数760rpm、記録半径30mm、再生レーザパワー
1.2mW）、実施例１と同等であった。With respect to the change with time of the reflectance when left in an environment of constant temperature and high humidity (60 ° C., 95% relative humidity), the same result as in Example 2 was obtained. Furthermore, the relationship between the continuous irradiation time and the reflectance is (substrate rotation speed 760 rpm, recording radius 30 mm, reproduction laser power
1.2 mW), which was equivalent to that of Example 1.
【００３０】本実施例においては、拡散防止層としてBi
2Se3熱吸収層としてはBiSbを用いたが、この他にも下表
のような材料によっても同等の効果が得られる。In this embodiment, Bi is used as the diffusion prevention layer.
BiSb was used as the 2 Se 3 heat absorption layer, but the same effect can be obtained by using the other materials shown in the table below.
【００３１】[0031]
【表１】 [Table 1]
【００３２】[0032]
【発明の効果】本発明によれば、記録情報の自然劣化、
再生レーザ光照射による劣化の両者を大幅に低減出来、
高い信頼性を有する光ディスクが得られる。According to the present invention, the natural deterioration of recorded information,
Both the deterioration due to the irradiation of the reproduction laser light can be greatly reduced,
An optical disc having high reliability can be obtained.
【図１】本発明実施例１のディスク構造図である。FIG. 1 is a disk structure diagram of a first embodiment of the present invention.
【図２】本発明実施例２のディスク構造図である。FIG. 2 is a disk structure diagram of Embodiment 2 of the present invention.
【図３】本発明実施例３のディスク構造図である。FIG. 3 is a disk structure diagram of Embodiment 3 of the present invention.
【図４】本発明の比較例を示す図である。FIG. 4 is a diagram showing a comparative example of the present invention.
【図５】線速度と記録レーザパワーの関係図である。FIG. 5 is a relationship diagram between linear velocity and recording laser power.
【図６】放置時間と反射率の関係図である。FIG. 6 is a diagram showing the relationship between the standing time and the reflectance.
【図７】熱吸収層の膜厚と連続照射後の反射率、最小記
録パワーの関係図である。FIG. 7 is a relationship diagram of the film thickness of the heat absorption layer, the reflectance after continuous irradiation, and the minimum recording power.
【図８】放置時間と反射率の関係図である。FIG. 8 is a diagram showing the relationship between the standing time and the reflectance.
【図９】記録前の膜厚方向の元素分布図である。FIG. 9 is an element distribution diagram in the film thickness direction before recording.
【図１０】記録後の膜厚方向の元素分布図である。FIG. 10 is an element distribution diagram in the film thickness direction after recording.
１…基板、 ２…第１の記録膜、 ３…第２の記録膜、 ４…拡散防止層、 ５…熱吸収層。 1 ... Substrate, 2 ... 1st recording film, 3 ... 2nd recording film, 4 ... Diffusion prevention layer, 5 ... Heat absorption layer.
Claims (4)
の記録膜，光吸収性の高い第２の記録膜を用い、第１の
記録膜の膜厚を制御し、干渉効果により初期反射率を決
定し、この干渉効果を消滅させて反射率を変化させ情報
を記録する光ディスクにおいて、前記第１の記録膜と第
２の記録膜の間に、第１の記録膜の構成元素の内少なく
とも１元素、第２の記録膜の構成元素の内少なくとも１
元素、またはその両者を含む拡散防止層を形成したこと
を特徴とする光ディスク。1. An optically transparent first sequentially formed on a substrate.
Recording film and the second recording film with high light absorption are used, the thickness of the first recording film is controlled, the initial reflectance is determined by the interference effect, and the interference effect is eliminated to change the reflectance. In the optical disc for recording information, at least one of the constituent elements of the first recording film and at least one of the constituent elements of the second recording film are provided between the first recording film and the second recording film.
An optical disc having a diffusion prevention layer containing an element or both of them.
の記録膜がSb,Se,Biの内少なくとも１元素以上、第２の
記録膜がBi,In,Pb,Snの内少なくとも１元素以上である
ことを特徴とする光ディスク。2. The optical disc according to claim 1, wherein
2. The optical disc in which the recording film of No. 1 is at least one element out of Sb, Se, Bi, and the second recording film is at least one element out of Bi, In, Pb, Sn.
第２の記録膜上に、第１の記録膜の構成元素の内少なく
とも１元素、第２の記録膜の構成元素の内少なくとも１
元素またはその両者を含む熱吸収層を形成したことを特
徴とする光ディスク。3. The optical disc according to claim 1, wherein at least one of the constituent elements of the first recording film and at least one of the constituent elements of the second recording film are provided on the second recording film.
An optical disc having a heat absorption layer containing an element or both.
の記録膜がSb,Se,Biの内少なくとも１元素以上、第２の
記録膜がBi,In,Pb,Snの内少なくとも１元素以上である
ことを特徴とする光ディスク。4. The optical disc according to claim 3, wherein
2. The optical disc in which the recording film of No. 1 is at least one element out of Sb, Se, Bi, and the second recording film is at least one element out of Bi, In, Pb, Sn.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5234492A JPH0793808A (en) | 1993-09-21 | 1993-09-21 | Optical disk |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5234492A JPH0793808A (en) | 1993-09-21 | 1993-09-21 | Optical disk |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0793808A true JPH0793808A (en) | 1995-04-07 |
Family
ID=16971881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5234492A Pending JPH0793808A (en) | 1993-09-21 | 1993-09-21 | Optical disk |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0793808A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150253668A1 (en) * | 2014-03-10 | 2015-09-10 | Nikon Corporation | Increasing and controlling sensitivity of non-linear metallic thin-film resists |
| CN113328004A (en) * | 2021-04-23 | 2021-08-31 | 深圳大学 | Indium selenide photoelectric detector for surface modification by utilizing stannous selenide nanocrystals and preparation method thereof |
-
1993
- 1993-09-21 JP JP5234492A patent/JPH0793808A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150253668A1 (en) * | 2014-03-10 | 2015-09-10 | Nikon Corporation | Increasing and controlling sensitivity of non-linear metallic thin-film resists |
| US9690198B2 (en) * | 2014-03-10 | 2017-06-27 | Nikon Corporation | Increasing and controlling sensitivity of non-linear metallic thin-film resists |
| US10416562B2 (en) | 2014-03-10 | 2019-09-17 | Nikon Research Corporation Of America | Increasing and controlling sensitivity of non-linear metallic thin-film resists |
| CN113328004A (en) * | 2021-04-23 | 2021-08-31 | 深圳大学 | Indium selenide photoelectric detector for surface modification by utilizing stannous selenide nanocrystals and preparation method thereof |
| CN113328004B (en) * | 2021-04-23 | 2022-11-01 | 深圳大学 | Indium selenide photoelectric detector for surface modification by utilizing stannous selenide nanocrystals and preparation method thereof |
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