JPH0792490A - Method for inspecting liquid crystal display element with thin-film transistor - Google Patents

Method for inspecting liquid crystal display element with thin-film transistor

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Publication number
JPH0792490A
JPH0792490A JP23511293A JP23511293A JPH0792490A JP H0792490 A JPH0792490 A JP H0792490A JP 23511293 A JP23511293 A JP 23511293A JP 23511293 A JP23511293 A JP 23511293A JP H0792490 A JPH0792490 A JP H0792490A
Authority
JP
Japan
Prior art keywords
liquid crystal
film transistor
crystal display
lines
common electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23511293A
Other languages
Japanese (ja)
Inventor
Makoto Sato
良 佐藤
Norifumi Hayata
憲文 早田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Priority to JP23511293A priority Critical patent/JPH0792490A/en
Publication of JPH0792490A publication Critical patent/JPH0792490A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

PURPOSE:To inspect liquid crystal characteristics and spot defects before packaging of a driving circuit by separately wiring common electrode lines and additive capacitance lines and applying a specific voltage to the common electrode lines and the additive capacitance lines. CONSTITUTION:The common electrode lines 9 and additive capacitance lines 10 of the liquid crystal display element with thin-film transistors(TFTs) in the course of a production line are formed as the separate wirings which are not electrically connected. Further, the additive capacitance lines 10 for each of respective pixels are shorted and the source wirings and gate wirings for each of the respective lines are respectively short circuited. While the TFTs 6 are held off, the voltage shifted in phase by 180 deg. is applied to the common electrode lines 9 and the additive capacitance lines 10. Then, the voltage based on the capacity ratio of a liquid crystal capacitance CLC and an additive capacitance CS is eventually directly applied on the liquid crystal layer 4. The common voltage is eventually applied to all the pixels according to such driving method and, therefore, a raster display is obtd.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、薄膜トランジスタ付き
液晶表示素子の検査方法、詳しくは、液晶特性及び点欠
陥を検査するための薄膜トランジスタ付き液晶表示素子
の検査方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for inspecting a liquid crystal display device with a thin film transistor, and more particularly to a method for inspecting a liquid crystal display device with a thin film transistor for inspecting liquid crystal characteristics and point defects.

【0002】[0002]

【従来の技術】近年、各画素毎に薄膜トランジスタ(以
下、TFTともいう。)を付加した液晶表示素子を組み
込んだマトリクス型液晶表示装置は、TFTのスイッチ
ング作用により、クロストークの無い高コントラストの
表示が得られることから、画像、文字表示装置としての
利用が進められている。
2. Description of the Related Art In recent years, a matrix type liquid crystal display device incorporating a liquid crystal display element in which a thin film transistor (hereinafter, also referred to as a TFT) is added to each pixel has a high contrast display without crosstalk due to a switching action of the TFT. Therefore, use as an image / character display device is being promoted.

【0003】一般に、上記のような液晶表示装置の製造
ラインにおいては、薄膜トランジスタ付き液晶表示素子
の液晶特性(具体的には、電圧保持特性、VT特性等)
を検査することが行なわれている。なお、周知のよう
に、電圧保持特性とは、TFTがオフにスイッチングし
た時点から液晶層がどの程度電圧を保持することができ
るかの定量的数値による液晶層の特性をいい、VT特性
とは、印加電圧に対する透過率を表わした液晶層の特性
をいう。
Generally, in the manufacturing line of the liquid crystal display device as described above, the liquid crystal characteristics of the liquid crystal display element with a thin film transistor (specifically, voltage holding characteristics, VT characteristics, etc.)
Is being inspected. As is well known, the voltage holding characteristic is a characteristic of the liquid crystal layer based on a quantitative value of how much the liquid crystal layer can hold the voltage from the time when the TFT is switched off, and the VT characteristic is , Refers to the characteristic of the liquid crystal layer that represents the transmittance with respect to the applied voltage.

【0004】従来、薄膜トランジスタ付き液晶表示素子
を検査する方法として、各画素毎の構成及び等価回路が
それぞれ図3(A) 及び図3(B) で表わされる薄膜トラン
ジスタ付き液晶表示素子を製造すると共に、各画素毎の
構成及び等価回路がそれぞれ図4(A) 及び図4(B) で表
わすことができるような品質管理用の液晶表示素子(図
4(A) ,(B) から明らかなように、TFTが付加されて
いない構成の液晶表示素子)を同一ロットにて製造し、
この品質管理用液晶表示素子の液晶層に電圧を直接印加
してその液晶特性を検査することにより、薄膜トランジ
スタ付き液晶素子の液晶特性の検査を間接的に行なうよ
うにした検査方法が知られている。なお、図3(A) ,
(B) において、1は透明絶縁基板(例えばガラス基
板)、2はカラーフィルタ、3はコモン電極、4は液晶
層、5は透明絶縁基板(例えばガラス基板)、6は薄膜
トランジスタ(TFT)、6aはTFT6のソース電
極、6bはTFT6のドレイン電極、6cはTFT6の
ゲート電極、7は画素電極、8は付加容量、8aは付加
容量電極、9はコモン電極線、10は付加容量線、CLC
は液晶層4の容量すなわち液晶容量、CS は付加容量を
それぞれ表わしている。また、図4(A) ,(B) におい
て、11は透明絶縁基板(例えばガラス基板)、12は
コモン電極、13は液晶層、14は透明絶縁基板(例え
ばガラス基板)、15は画素電極、CLCは液晶層13の
容量すなわち液晶容量をそれぞれ表わしている。
Conventionally, as a method of inspecting a liquid crystal display device with a thin film transistor, a liquid crystal display device with a thin film transistor having a structure and an equivalent circuit for each pixel shown in FIGS. 3 (A) and 3 (B) is manufactured. A liquid crystal display device for quality control (as is clear from FIGS. 4 (A) and 4 (B)) whose configuration and equivalent circuit for each pixel can be represented by FIGS. 4 (A) and 4 (B), respectively. , A liquid crystal display device with no TFT added) is manufactured in the same lot.
An inspection method is known in which a voltage is directly applied to the liquid crystal layer of the liquid crystal display element for quality control to inspect its liquid crystal characteristic, so that the liquid crystal characteristic of the liquid crystal element with a thin film transistor is indirectly inspected. . In addition, as shown in FIG.
In (B), 1 is a transparent insulating substrate (eg, glass substrate), 2 is a color filter, 3 is a common electrode, 4 is a liquid crystal layer, 5 is a transparent insulating substrate (eg, glass substrate), 6 is a thin film transistor (TFT), and 6a. Is a source electrode of the TFT 6, 6b is a drain electrode of the TFT 6, 6c is a gate electrode of the TFT 6, 7 is a pixel electrode, 8 is an additional capacitance, 8a is an additional capacitance electrode, 9 is a common electrode line, 10 is an additional capacitance line, C LC
Represents the capacity of the liquid crystal layer 4, that is, the liquid crystal capacity, and C S represents the additional capacity. In FIGS. 4A and 4B, 11 is a transparent insulating substrate (eg, glass substrate), 12 is a common electrode, 13 is a liquid crystal layer, 14 is a transparent insulating substrate (eg, glass substrate), 15 is a pixel electrode, C LC represents the capacity of the liquid crystal layer 13, that is, the liquid crystal capacity.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上記従
来の検査方法によると、品質管理用液晶表示素子を製造
するための工程が増加し、また、品質管理用液晶表示素
子を検査することで薄膜トランジスタ付き液晶表示素子
を間接的に検査していることから、検査結果が薄膜トラ
ンジスタ付き液晶表示素子自体の液晶特性とは必ずしも
一致しないという問題があった。
However, according to the above-mentioned conventional inspection method, the number of steps for manufacturing the quality control liquid crystal display element is increased, and the quality control liquid crystal display element is inspected, so that the thin film transistor Since the liquid crystal display element is indirectly inspected, there is a problem that the inspection result does not always match the liquid crystal characteristics of the liquid crystal display element with a thin film transistor.

【0006】また、通常、薄膜トランジスタ付き液晶表
示素子の不良の大半は点欠陥によるものであるが、従
来、この点欠陥の検査は、薄膜トランジスタ付き液晶表
示素子のドライブ回路を実装した後でなければ行なうこ
とができず、このため、点欠陥が発見された場合、高価
なドライブ回路を無駄にしてしまうという問題もあっ
た。なお、この点欠陥の検査方法の他の例として、ドラ
イブ回路実装前に、薄膜トランジスタ付き液晶表示素子
の全電極端子(通常、数千端子からなり、ピッチは10
0μm〜300μmである。)にプローブ(針)を立て
て検査する方法があるが、この検査方法は、高精細化
(ピッチ100μm以下)につれてその実施が困難にな
りつつある。
Usually, most of the defects of the liquid crystal display device with a thin film transistor are due to point defects, but conventionally, the inspection of this point defect is performed only after the drive circuit of the liquid crystal display device with a thin film transistor is mounted. Therefore, if a point defect is found, an expensive drive circuit is wasted. As another example of this point defect inspection method, before mounting the drive circuit, all electrode terminals of the liquid crystal display element with a thin film transistor (usually consisting of several thousand terminals and having a pitch of 10
It is 0 μm to 300 μm. ), A probe (needle) is set up for inspection, but this inspection method is becoming difficult to implement as the definition becomes higher (pitch 100 μm or less).

【0007】本発明は、上記問題点を解決するためにな
されたものであり、その目的とするところは、薄膜トラ
ンジスタ付き液晶表示素子自体の液晶特性を検査するこ
とができるとともに、ドライブ回路実装前に点欠陥を検
査することができる薄膜トランジスタ付き液晶表示素子
の検査方法を提供することにある。
The present invention has been made to solve the above problems, and an object thereof is to be able to inspect the liquid crystal characteristics of a liquid crystal display element with a thin film transistor itself and to mount it before mounting a drive circuit. An object of the present invention is to provide a method for inspecting a liquid crystal display device with a thin film transistor, which can inspect a point defect.

【0008】[0008]

【課題を解決するための手段】上記課題を解決するため
に、本発明に係る薄膜トランジスタ付き液晶表示素子の
検査方法は、コモン電極線と付加容量線とを別配線と
し、該コモン電極線及び付加容量線に180°位相のず
れた電圧を印加することにより、液晶容量と付加容量と
の容量比に基づいて決定される電圧を液晶層に直接印加
するようにしたことを特徴とする。
In order to solve the above-mentioned problems, a method of inspecting a liquid crystal display device with a thin film transistor according to the present invention uses a common electrode line and an additional capacitance line as separate wiring, and the common electrode line and the additional capacitance line are added. It is characterized in that a voltage determined by a capacitance ratio of the liquid crystal capacitance and the additional capacitance is directly applied to the liquid crystal layer by applying a voltage having a phase shift of 180 ° to the capacitance line.

【0009】[0009]

【実施例】以下、本発明の一実施例を図1及び図2に基
づいて説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.

【0010】図1(A) 及び図1(B) は、それぞれ、一実
施例に係る薄膜トランジスタ付き液晶表示素子の検査方
法を説明するための、薄膜トランジスタ付き液晶表示素
子の各画素毎の構成図及び等価回路図を示している。ま
た、図2は、同じく上記検査方法を説明するための、薄
膜トランジスタ付き液晶表示素子全体の平面図を示して
いる。なお、図1(A) ,(B) 及び図2において、図3
(A) ,(B) に示す符号と同一の符号は、図3(A) ,(B)
と同一のものを表わしている。
FIG. 1A and FIG. 1B are configuration diagrams of respective pixels of a liquid crystal display device with a thin film transistor for explaining an inspection method of a liquid crystal display device with a thin film transistor according to one embodiment. The equivalent circuit diagram is shown. In addition, FIG. 2 is a plan view of the entire liquid crystal display element with a thin film transistor for explaining the above inspection method. In addition, in FIG. 1 (A), (B) and FIG.
3A and 3B are the same as those shown in FIGS. 3A and 3B.
Represents the same thing as.

【0011】本検査方法を実施するにあたっては、図1
(A) ,(B) に示すように、製造ライン途中にある薄膜ト
ランジスタ付き液晶表示素子のコモン電極線9と付加容
量線10とを電気的に接続されない別配線とし、図3
(A) ,(B) に示すような、コモン電極線9と付加容量線
10とを電気的に接続して同一配線を形成するものとは
しない。
In carrying out this inspection method, FIG.
As shown in (A) and (B), the common electrode line 9 and the additional capacitance line 10 of the liquid crystal display device with a thin film transistor in the manufacturing line are separated from each other by electrically connecting them to each other.
The common electrode line 9 and the additional capacitance line 10 as shown in (A) and (B) are not electrically connected to form the same wiring.

【0012】さらに、図2に示すように、各画素毎の付
加容量線10は短絡させ、また、各ライン毎のソース配
線16及びゲート配線17も、それぞれ短絡させる。
Further, as shown in FIG. 2, the additional capacitance line 10 for each pixel is short-circuited, and the source line 16 and the gate line 17 for each line are also short-circuited.

【0013】そして、薄膜トランジスタ6をオフ状態に
保持しながら、コモン電極線9及び付加容量線10に、
180°位相のずれた電圧を印加する。ここで、薄膜ト
ランジスタ6をオフ状態に保持するためには、ソース電
極6a及びゲート電極6bに逆方向の直流バイアス電圧
を印加するようにすればよい。しかし、液晶工程の間、
薄膜トランジスタ6を静電気から保護するために、ソー
ス配線16とゲート配線17とを接続することが通常行
なわれるため、上記のようなバイアス電圧印加を特別に
行なわなくても薄膜トランジスタ6をオフ状態に保持す
ることができる。従って、液晶層4には、液晶容量CLC
と付加容量CS との容量比に基づいた電圧が直接印加さ
れるようになる。例えば、液晶容量CLCが1pF、付加
容量CSが0.8pFであり、コモン電極3、付加容量
電極8a間に10Vの電圧を印加した場合、液晶層4に
は、4.4V(=10×0.8/(1+0.8))の電
圧が印加されることになる。なお、このような駆動方法
によると、全ての画素に対し共通の電圧が印加されるこ
とになるため、ラスタ表示となる。
While holding the thin film transistor 6 in the off state, the common electrode line 9 and the additional capacitance line 10 are
Voltages 180 ° out of phase are applied. Here, in order to hold the thin film transistor 6 in the off state, a reverse DC bias voltage may be applied to the source electrode 6a and the gate electrode 6b. However, during the liquid crystal process,
Since the source line 16 and the gate line 17 are usually connected to protect the thin film transistor 6 from static electricity, the thin film transistor 6 is kept in an off state without special application of the bias voltage as described above. be able to. Therefore, the liquid crystal layer 4 has a liquid crystal capacitance C LC.
The voltage based on the capacitance ratio between the capacitance and the additional capacitance C S is directly applied. For example, when the liquid crystal capacitance C LC is 1 pF and the additional capacitance C S is 0.8 pF and a voltage of 10 V is applied between the common electrode 3 and the additional capacitance electrode 8a, the liquid crystal layer 4 has 4.4 V (= 10 V). A voltage of × 0.8 / (1 + 0.8) will be applied. According to such a driving method, since a common voltage is applied to all pixels, raster display is performed.

【0014】次に、主要な検査項目毎に検査方法を説明
する。
Next, the inspection method will be described for each main inspection item.

【0015】 電圧保持特性の検査 非常にインピーダンスの高い電圧計を用い、上記のよう
にコモン電極線9及び付加容量線10に、180°位相
のずれた電圧を印加し、その後、印加を解除して電圧計
をモニタする。
Inspection of voltage holding characteristics Using a voltmeter having an extremely high impedance, a voltage having a 180 ° phase shift is applied to the common electrode line 9 and the additional capacitance line 10 as described above, and then the application is released. Monitor the voltmeter.

【0016】 点欠陥の検査 1) 画素電極7とソース配線16との短絡による点欠陥
の検査 ソース電圧を変動させて画素の明るさが変化したかどう
かを検査する。
Inspection of Point Defects 1) Inspection of Point Defects Due to Short-Circuit between Pixel Electrode 7 and Source Wiring 16 It is inspected whether the brightness of the pixel is changed by changing the source voltage.

【0017】2) 画素電極7とゲート配線17との短絡
による点欠陥の検査 ゲート電圧を変動させて画素の明るさが変化したかどう
かを検査する。
2) Inspection of Point Defect Due to Short Circuit between Pixel Electrode 7 and Gate Wiring 17 It is inspected whether the brightness of the pixel is changed by changing the gate voltage.

【0018】3) 画素電極7と付加容量線10との短絡
による点欠陥の検査 液晶層4の印加電圧が大きくなるため、画素が黒くなる
のが早い。
3) Inspection of Point Defects Due to Short Circuit between Pixel Electrode 7 and Additional Capacitance Line 10 Since the voltage applied to the liquid crystal layer 4 becomes large, the pixels turn black quickly.

【0019】4) 画素電極7とコモン電極3との短絡に
よる点欠陥の検査 液晶層4に電圧が印加されないため画素が黒くならな
い。
4) Inspection of Point Defect Due to Short Circuit between Pixel Electrode 7 and Common Electrode 3 The pixel does not become black because no voltage is applied to the liquid crystal layer 4.

【0020】5) 薄膜トランジスタ6の不良による点欠
陥の検査 上記点欠陥1)〜4)のいずれにもよらない点欠陥が生じた
ときは、薄膜トランジスタ6の不良による点欠陥と判断
する。
5) Inspection of Point Defect Due to Defect of Thin Film Transistor 6 When a point defect which is not due to any of the above point defects 1) to 4) occurs, it is judged as a point defect due to a defect of the thin film transistor 6.

【0021】以上説明したように、本実施例の検査方法
によると、薄膜トランジスタ付き液晶表示素子自体の液
晶特性を検査できるようになるとともに、ドライブ回路
を実装することなく点欠陥を検査することができるよう
になる。また、点欠陥の検査は、プローブを立てること
なく行なうことができるため、高精細化された液晶表示
素子に対しても容易に検査を行なうことができるように
なる。なお、本実施例による駆動方法は上述したように
ラスタ表示しかできないが、最終的にドライブ回路によ
り駆動するときには、従来と同様、コモン電極3及び付
加容量電極8aに同一信号を入力させる。
As described above, according to the inspection method of this embodiment, it becomes possible to inspect the liquid crystal characteristics of the liquid crystal display element with a thin film transistor itself, and it is possible to inspect point defects without mounting a drive circuit. Like Further, since the inspection of the point defect can be performed without raising the probe, it becomes possible to easily inspect the high-definition liquid crystal display element. Although the drive method according to the present embodiment can only perform raster display as described above, when the drive circuit is finally driven, the same signal is input to the common electrode 3 and the additional capacitance electrode 8a as in the conventional case.

【0022】なお、上述した実施例は、一般によく使用
される、独立して付加容量を設けた構造の薄膜トランジ
スタ付き液晶表示素子に対する検査方法であるが、本発
明はこれに限定されるものではなく、その他、付加容量
線を省略し、付加容量を1つ前の画素のゲート配線を利
用して形成したタイプの薄膜トランジスタ付き液晶表示
素子を検査対象とすることができ、この場合には、ゲー
ト信号(付加容量信号)とソース信号とを、コモン信号
に対して180°位相をずらして入力することで検査す
ることができる。
Although the above-described embodiment is an inspection method for a liquid crystal display element with a thin film transistor, which has a structure in which an additional capacitance is provided independently, which is generally used, the present invention is not limited to this. In addition, the liquid crystal display element with a thin film transistor of the type in which the additional capacitance line is omitted and the additional capacitance is formed by using the gate wiring of the previous pixel can be used as the inspection target. The (additional capacitance signal) and the source signal can be inspected by inputting them by 180 ° out of phase with the common signal.

【0023】[0023]

【発明の作用効果】以上説明したように、本発明は、コ
モン電極線と付加容量線とを別配線とし、該コモン電極
線及び付加容量線に180°位相のずれた電圧を印加す
ることにより、液晶容量と付加容量との容量比に基づい
て決定される電圧を液晶層に直接印加するようにしたた
め、薄膜トランジスタ付き液晶表示素子自体の液晶特性
を検査することができるとともに、ドライブ回路実装前
に点欠陥を検査することができる。
As described above, according to the present invention, the common electrode line and the additional capacitance line are separated from each other, and the common electrode line and the additional capacitance line are applied with a voltage with a phase difference of 180 °. Since the voltage determined based on the capacitance ratio between the liquid crystal capacitance and the additional capacitance is directly applied to the liquid crystal layer, it is possible to inspect the liquid crystal characteristics of the liquid crystal display element with a thin film transistor itself and before mounting the drive circuit. Point defects can be inspected.

【図面の簡単な説明】[Brief description of drawings]

【図1】一実施例に係る薄膜トランジスタ付き液晶表示
素子の検査方法を説明するための、薄膜トランジスタ付
き液晶表示素子の各画素毎の構成図及び等価回路図
FIG. 1 is a configuration diagram and an equivalent circuit diagram of each pixel of a liquid crystal display element with a thin film transistor for explaining an inspection method of a liquid crystal display element with a thin film transistor according to an embodiment.

【図2】上記薄膜トランジスタ付き液晶表示素子全体の
平面図
FIG. 2 is a plan view of the entire liquid crystal display element with the thin film transistor.

【図3】従来からの、薄膜トランジスタ付き液晶表示素
子の検査方法を説明するための、薄膜トランジスタ付き
液晶表示素子の各画素毎の構成及び等価回路
FIG. 3 is a configuration and an equivalent circuit of each pixel of a liquid crystal display device with a thin film transistor for explaining a conventional method for inspecting a liquid crystal display device with a thin film transistor.

【図4】同じく、従来方法を説明するための、品質管理
用の液晶表示素子の各画素毎の構成及び等価回路
FIG. 4 is also a configuration and an equivalent circuit of each pixel of a liquid crystal display element for quality control, for explaining a conventional method.

【符号の説明】[Explanation of symbols]

4 液晶層 6 薄膜トランジスタ 9 コモン電極線 10 付加容量線 CLC 液晶容量 CS 付加容量4 liquid crystal layer 6 thin film transistor 9 common electrode line 10 additional capacitance line C LC liquid crystal capacitance C S additional capacitance

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 コモン電極線と付加容量線とを別配線と
し、該コモン電極線及び付加容量線に180°位相のず
れた電圧を印加することにより、液晶容量と付加容量と
の容量比に基づいて決定される電圧を液晶層に直接印加
するようにしたことを特徴とする薄膜トランジスタ付き
液晶表示素子の検査方法。
1. A capacitance ratio between a liquid crystal capacitance and an additional capacitance is obtained by forming the common electrode line and the additional capacitance line as separate wirings, and applying a voltage with a 180 ° phase shift to the common electrode line and the additional capacitance line. A method for inspecting a liquid crystal display device with a thin film transistor, characterized in that a voltage determined based on the liquid crystal layer is directly applied to the liquid crystal layer.
JP23511293A 1993-09-21 1993-09-21 Method for inspecting liquid crystal display element with thin-film transistor Pending JPH0792490A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23511293A JPH0792490A (en) 1993-09-21 1993-09-21 Method for inspecting liquid crystal display element with thin-film transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23511293A JPH0792490A (en) 1993-09-21 1993-09-21 Method for inspecting liquid crystal display element with thin-film transistor

Publications (1)

Publication Number Publication Date
JPH0792490A true JPH0792490A (en) 1995-04-07

Family

ID=16981239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23511293A Pending JPH0792490A (en) 1993-09-21 1993-09-21 Method for inspecting liquid crystal display element with thin-film transistor

Country Status (1)

Country Link
JP (1) JPH0792490A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8130187B2 (en) 2000-07-19 2012-03-06 Toshiba Matsushita Display Technology Co., Ltd. OCB liquid crystal display with active matrix and supplemental capacitors and driving method for the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8130187B2 (en) 2000-07-19 2012-03-06 Toshiba Matsushita Display Technology Co., Ltd. OCB liquid crystal display with active matrix and supplemental capacitors and driving method for the same

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