JPH0789473B2 - Camera tube - Google Patents
Camera tubeInfo
- Publication number
- JPH0789473B2 JPH0789473B2 JP12797886A JP12797886A JPH0789473B2 JP H0789473 B2 JPH0789473 B2 JP H0789473B2 JP 12797886 A JP12797886 A JP 12797886A JP 12797886 A JP12797886 A JP 12797886A JP H0789473 B2 JPH0789473 B2 JP H0789473B2
- Authority
- JP
- Japan
- Prior art keywords
- image pickup
- pickup tube
- electron beam
- photoconductive
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/26—Image pick-up tubes having an input of visible light and electric output
- H01J31/28—Image pick-up tubes having an input of visible light and electric output with electron ray scanning the image screen
- H01J31/34—Image pick-up tubes having an input of visible light and electric output with electron ray scanning the image screen having regulation of screen potential at cathode potential, e.g. orthicon
- H01J31/38—Tubes with photoconductive screen, e.g. vidicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光導電形撮像管に係り、特に解像度を従来より
大巾に高めた撮像管に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoconductive image pickup tube, and more particularly to an image pickup tube having a resolution significantly higher than that of a conventional one.
従来、解像度の高いテレビジョン画像を得る手段とし
て、信号を読み取るための走査線本数を増加する方法が
とられている。これに用いる光導電形撮像管は、一般
に、光学像を電気信号に変換する光導電ターゲット部
と、電気信号を読み取るための走査電子ビームを発射す
る電子銃、および電子ビームを集束偏向する電子ビーム
制御部とからなる。Conventionally, a method of increasing the number of scanning lines for reading a signal has been used as a means for obtaining a television image with high resolution. The photoconductive type image pickup tube used for this is generally a photoconductive target section for converting an optical image into an electric signal, an electron gun for emitting a scanning electron beam for reading the electric signal, and an electron beam for converging and deflecting the electron beam. It consists of a control unit.
かかる撮像管において、前述のように走査線本数を増し
て解像度を高めるために、走査電子ビームを細くする方
法や、光導電ターゲットに解像能力の高い光導電膜を用
いる方法がとられている。かかる撮像管を以下高精細テ
レビ用撮像管と称す。In such an image pickup tube, as described above, in order to increase the number of scanning lines and increase resolution, a method of narrowing a scanning electron beam or a method of using a photoconductive film having a high resolution as a photoconductive target is used. . Such an image pickup tube is hereinafter referred to as a high definition television image pickup tube.
たとえば、光導電膜に膜厚４〜６μｍのSeを主体とする
非晶質光導電膜を用いた１インチ形高精細テレビ用撮像
管において、走査線本数1125本で800TV本の振巾変調度4
5％前後の解像度が達成されている（テレビジョン学会
誌，第39巻，第８号，第661頁〜第674頁，昭60年８
月）。For example, in a 1-inch type high-definition television image pickup tube that uses an amorphous photoconductive film mainly composed of Se having a film thickness of 4 to 6 μm as the photoconductive film, the amplitude modulation degree of 800 TV lines with 1125 scanning lines. Four
A resolution of around 5% has been achieved (Journal of the Television Society, Vol. 39, No. 8, pp. 661 to 674, 1985).
Month).
従来の高精細テレビ用撮像管は、上記のように高い解像
度を有しているものの、35mmや75mm映像フイルム等の解
像度と比べるとまだかなり低く、さらなる高解像度化が
強く要求されている。Although the conventional high-definition television image pickup tube has a high resolution as described above, it is still considerably lower than the resolutions of 35 mm and 75 mm image films, and there is a strong demand for higher resolution.
本発明者らによれば、従来のかかる高精細テレビ用撮像
管では、動作中に入射光によって生ずる光導電膜表面の
面電位変化が大きいために充分な解像度が得られていな
いことが明らかとなった。According to the present inventors, it has been clarified that such a conventional high-definition television image pickup tube cannot obtain sufficient resolution because the surface potential change of the photoconductive film surface caused by incident light during operation is large. became.
本発明はかかる欠点を改善して解像度を大巾に向上させ
ることを目的とする。It is an object of the present invention to remedy such drawbacks and significantly improve the resolution.
上記目的は、走査線本数を増して用いる高精細テレビ用
撮像管において、光導電膜の蓄積容量を増すことによ
り、達成される。The above object is achieved by increasing the storage capacity of the photoconductive film in a high-definition television image pickup tube in which the number of scanning lines is increased.
第１図は、本発明を説明するための撮像管の断面概略図
である。１はカソード,2は走査電子ビーム,3は電子ビー
ム２を制御するための電極,4は電子銃ビーム制限孔,5は
光導電膜,6はメッシュ電極,7は透明電極,8はガラス面
板,9はガラス外囲器である。かかる撮像管において、透
明電極７とカソード１の間に同図に示すような外部電源
10を接続して、集束偏向された電子ビーム２で光導電膜
５を走査すると、光導電膜５の走査側表面は負に荷電し
てほぼカソード電位に平衡するので、光導電体膜５はほ
ぼ外部電源10で充電されることになる。光が入ると光導
電膜５の電気抵抗が下がるので負電荷の放電が進み、そ
の結果光導電膜５の走査側表面に入射光量に応じた電荷
パターンが形成されて面電位の変化をきたす。次の周期
に電子ビーム２が光導電膜５を走査するとき、面電位の
変化に応じて電子ビームがランディングし、放電した電
荷量にほぼ等しい充電電流が電流計11を流れるので、こ
れによって光学像が時系列信号電流に変化される。FIG. 1 is a schematic sectional view of an image pickup tube for explaining the present invention. 1 is a cathode, 2 is a scanning electron beam, 3 is an electrode for controlling the electron beam 2, 4 is an electron gun beam limiting hole, 5 is a photoconductive film, 6 is a mesh electrode, 7 is a transparent electrode, 8 is a glass face plate , 9 are glass envelopes. In such an image pickup tube, an external power source as shown in the figure is provided between the transparent electrode 7 and the cathode 1.
When 10 is connected and the photoconductive film 5 is scanned by the electron beam 2 which is focused and deflected, the surface of the photoconductive film 5 on the scanning side is negatively charged and almost equilibrium to the cathode potential. It will be almost charged by the external power supply 10. When light enters, the electrical resistance of the photoconductive film 5 decreases, and the discharge of negative charges progresses. As a result, a charge pattern corresponding to the amount of incident light is formed on the surface of the photoconductive film 5 on the scanning side, and the surface potential changes. When the electron beam 2 scans the photoconductive film 5 in the next cycle, the electron beam is landed according to the change of the surface potential, and the charging current almost equal to the discharged charge amount flows through the ammeter 11, so that the optical The image is transformed into a time series signal current.
発明者らは、かかる撮像管における解像度と光導電膜の
蓄積容量の関係を詳細に検討し、電子ビーム制御孔４の
穴径を小さくした撮像管において蓄積容量を増すと解像
度が大巾に改善できることを明らかにした。The inventors have studied in detail the relationship between the resolution in such an image pickup tube and the storage capacity of the photoconductive film, and the resolution is greatly improved by increasing the storage capacity in the image pickup tube in which the hole diameter of the electron beam control hole 4 is reduced. Revealed what you can do.
第２図は、直径10μｍの電子ビーム制限穴を有する2/3
インチ形撮像管を走査線数1125本で動作させた時の振巾
変調度と光導電膜の単位面積当りの蓄積容量の関係を示
す一例である。同図から、振巾変調度、すなわち解像度
は光導電膜の単位面積当りの蓄積容量（以下、比蓄積容
量と称す）を15μF/m2以上とすることで大巾に改善され
ることがわかる。解像度は比蓄積容量が増すほど高くな
るが、比蓄積容量を増しすぎると残像が目立つようにな
るので、比蓄積容量の上限は撮像管の使用目的に応じて
決定されるべきであるが実用的には150μF/m2以下が望
ましい。Fig. 2 shows a 2/3 with electron beam limiting holes with a diameter of 10 μm.
It is an example showing the relationship between the amplitude modulation degree and the storage capacitance per unit area of the photoconductive film when the inch type imaging tube is operated with 1125 scanning lines. From the figure, it can be seen that the amplitude modulation degree, that is, the resolution is significantly improved by setting the storage capacitance per unit area of the photoconductive film (hereinafter referred to as the specific storage capacitance) to 15 μF / m 2 or more. . The resolution increases as the specific storage capacity increases, but if the specific storage capacity is increased too much, the afterimage becomes noticeable.Therefore, the upper limit of the specific storage capacity should be determined according to the intended use of the image pickup tube, but it is practical. 150 μF / m 2 or less is desirable.
光導電膜に解像能力の高いSeを主体とする非晶質膜を用
いる場合、膜厚を3.5μｍ以下とすることにより比蓄積
容量を15μF/m2以上とすることができ、特に著るしい解
像度の改善効果が得られる。When an amorphous film mainly composed of Se, which has a high resolution, is used as the photoconductive film, the specific storage capacitance can be set to 15 μF / m 2 or more by setting the film thickness to 3.5 μm or less. A good resolution improvement effect can be obtained.
上記効果は、電子銃ビーム制限孔４を小さくし、走査線
本数を増して動作させた時に特に顕著で、電子銃ビーム
制限孔が大きい場合は、比貯蓄容量を増しても解像度の
大巾な改善効果は得られない。The above effect is particularly remarkable when the electron gun beam limiting hole 4 is made small and the number of scanning lines is increased to operate, and when the electron gun beam limiting hole is large, the resolution is wide even if the specific storage capacity is increased. No improvement effect can be obtained.
電子銃ビーム制限孔４の直径は、2/3インチ形撮像管で
は15μｍ以下、１インチ形撮像管では25μｍ以下である
ことが望ましく、下限は、孔径を小さくすると電子ビー
ム量が減少するので、実用的見地から５μｍ以上である
ことが望ましい。The diameter of the electron gun beam limiting hole 4 is preferably 15 μm or less for the 2/3 inch type image pickup tube and 25 μm or less for the 1 inch type image pickup tube. The lower limit is that the electron beam amount decreases when the hole diameter is reduced, From a practical point of view, it is desirable that the thickness is 5 μm or more.
電子銃ビーム制限孔４は、電子ビームが入射する入口か
ら出口に向って広がりを持つテーパー形状にして、電子
ビームの透過率を高めた構造にするとよい。It is preferable that the electron gun beam limiting hole 4 has a tapered shape that widens from the entrance from which the electron beam is incident toward the exit, so that the electron beam transmittance is increased.
第３図は、上記により構成された2/3インチ形撮像管の
解像度と、メッシュとターゲットとの間の距離の関係を
示す１例である。先に述べた解像度改善効果を充分に達
成するには、同図からメッシュ電極６と光導電膜５との
距離を1mm以上3mm以下、望ましくは1mm以上2mm以下にす
るとよいことがわかる。FIG. 3 is an example showing the relationship between the resolution of the 2/3 inch type image pickup tube constructed as described above and the distance between the mesh and the target. In order to sufficiently achieve the above-described resolution improving effect, it is understood from the figure that the distance between the mesh electrode 6 and the photoconductive film 5 should be 1 mm or more and 3 mm or less, preferably 1 mm or more and 2 mm or less.
以上2/3インチ形撮像管を例にとって述べたが、その他
の管、例えば１インチ形撮像管においても全く同様な解
像度の改善効果が見られた。Although the 2/3 inch type image pickup tube has been described above as an example, the same effect of improving the resolution was observed in the other tube, for example, the 1 inch type image pickup tube.
本発明による撮像管を、たとえば、走査線本数1125本で
動作させ、１インチ形撮像管で800TV本の振幅変調度80
％以上（従来は45％前後）、2/3インチ形撮像管で40％
（従来は30％前後）の高い解像度が得られた。The pick-up tube according to the present invention is operated with, for example, 1125 scanning lines, and a 1-inch pick-up tube has an amplitude modulation degree of 800 TV lines of 80 TV lines.
% Or more (previously around 45%), 40% for 2/3 inch type image pickup tube
High resolution (about 30% in the past) was obtained.
以下、本発明の実施例について説明する。 Examples of the present invention will be described below.
［実施例１］ １インチガラス基板上にSnO2を主体とする透明電極をCV
D法により形成し、その上に、Se,As,Teからなり、Seを5
0重量％以上含有する非晶質光導電膜を、10-5Torr以下
の雰囲気で蒸着法により形成する。そのとき膜厚は0.35
μｍ以上3.5μｍ以下とする。次にその上に、走査電子
ビームランディング層として10-2Torrのアルゴンガス雰
囲気中で膜厚400Å以上1000Å以下のSb2S3多孔質膜を形
成し、比蓄積容量15μF/m2以上の光導電ターゲット部を
得る。[Example 1] A transparent electrode mainly composed of SnO 2 was CV on a 1-inch glass substrate.
It is formed by the D method, and Se, As, and Te are formed on it, and Se is
An amorphous photoconductive film containing 0% by weight or more is formed by vapor deposition in an atmosphere of 10 -5 Torr or less. Then the film thickness is 0.35
It should be above μm and below 3.5 μm. Next, a Sb 2 S 3 porous film with a film thickness of 400 Å or more and 1000 Å or less is formed on it as a scanning electron beam landing layer in an argon gas atmosphere of 10 -2 Torr, and the light with a specific storage capacity of 15 μF / m 2 or more is formed. Obtain a conductive target portion.
上記光導電ターゲット部と、電子銃，メッシュ電極、な
らびに電子ビームを集束偏向するための電極装置を内蔵
したガラス外囲器を組合せて内部を真空に排気し、撮像
管を得る。このとき、電子銃ビーム制限孔の直径は15μ
ｍとする。The photoconductive target portion, an electron gun, a mesh electrode, and a glass envelope containing an electrode device for focusing and deflecting an electron beam are combined to evacuate the interior to obtain an image pickup tube. At this time, the diameter of the electron gun beam limiting hole is 15μ.
m.
［実施例２］ 2/3インチガラス基板上にSnO2、またはIn2O3を主体とす
る透明電極をCVD法、またはスパッタリング法により形
成し、その上に正孔注入阻止層として、膜厚150ÅのCeO
2を真空蒸着法により形成する。次にその上に、第1,第
2,第３の３層からなる光導電層を真空蒸着法により順次
積層形成し、全体の膜厚が0.35μｍ以上3.5μｍ以下と
なるようにする。第１の層は、平均15重量％以下のAsを
含有する非晶質Se−As光導電膜からなり、膜厚を100〜1
000Åとし、第２の層は、増感層で、平均20〜50重量％
のTeと平均５重量％以下のAsを含有する非晶質Se−As光
導電膜からなり、膜厚200Å以上1500Å以下、第３の層
は、平均15重量％以下のAsを含有する非晶質Se−As光導
電膜からなる。最後に電子ビームランディング層とし
て、10-2Torrの不活性ガス雰囲気中で順厚400Å以上100
0Å以下のSb2S3多孔質膜を形成し、比蓄積容量15μF/m2
以上の光導電ターゲット部を得る。上記構造の光導電膜
では、入射光の大部分か第１および第２の層で吸収され
るので、第３の層を薄くして比蓄積容量を増しても感度
を全く損うことがない。[Example 2] A transparent electrode mainly composed of SnO 2 or In 2 O 3 was formed on a 2 / 3-inch glass substrate by a CVD method or a sputtering method, and a film was formed on the transparent electrode as a hole injection blocking layer. 150Å CeO
2 is formed by a vacuum evaporation method. Then on top of that,
A photoconductive layer composed of the second and third layers is sequentially laminated by a vacuum vapor deposition method so that the total film thickness is 0.35 μm or more and 3.5 μm or less. The first layer is composed of an amorphous Se-As photoconductive film containing 15% by weight or less of As on average, and has a film thickness of 100 to 1
000 Å, the second layer is the sensitizing layer, average 20-50% by weight
Of amorphous Si-As photoconductive film containing Te and 5% by weight or less of average As, and the third layer is amorphous containing 15% by weight or less of average As. Quality Se-As photoconductive film. Finally, as an electron beam landing layer, a normal thickness of 400 Å or more 100 in an inert gas atmosphere of 10 -2 Torr.
Sb 2 S 3 porous film of 0 Å or less is formed, and the specific storage capacity is 15 μF / m 2
The above photoconductive target portion is obtained. In the photoconductive film having the above structure, most of the incident light is absorbed by the first and second layers, so that even if the third layer is thinned to increase the specific storage capacity, the sensitivity is not impaired at all. .
上記光導電ターゲット部と、電子銃，メッシュ電極なら
びに電子ビームを集束偏向するための電極装置を内蔵し
たガラス外囲器と組合せて内部を真空に排気し、2/3イ
ンチ形撮像管を得る。このとき、電子銃はダイオード形
とし、電子銃ビーム制限孔の断面形状は第４図に示すよ
うな２段形テーパー構造とし、制限孔の穴径は10μｍと
する。また、メッシュ電極には1500〜2000メッシュのCu
メッシュを用い、メッシュ電極と光導電膜の距離は１〜
2mmとなるようにする。The inside of the photoconductive target portion, the electron gun, the mesh electrode, and the glass envelope having the electrode device for converging and deflecting the electron beam incorporated therein are evacuated to obtain a 2/3 inch type image pickup tube. At this time, the electron gun is of a diode type, the cross section of the electron gun beam limiting hole has a two-step taper structure as shown in FIG. 4, and the diameter of the limiting hole is 10 μm. Also, the mesh electrode is Cu of 1500-2000 mesh.
A mesh is used, and the distance between the mesh electrode and the photoconductive film is 1 to
Make it 2 mm.
本発明によれば、膜厚を減らして蓄積容量を増した光導
電膜と電子ビーム制限孔を小さくして走査電子ビームを
細くすることができるようにした電子銃を組合せること
により小形撮像管でも高い解像度を得ることができ、テ
レビカメラの小形化が可能となる。According to the present invention, a small-sized image pickup tube is formed by combining a photoconductive film having a reduced film thickness and an increased storage capacity and an electron gun capable of making a scanning electron beam thin by making an electron beam limiting hole small. However, it is possible to obtain high resolution and downsize the TV camera.
第１図は、本発明を説明するための撮像管の断面概略
図、第２図は、電子銃ビーム制限孔を小さくした2/3イ
ンチ形撮像管を走査線本数1125本で動作した時の振巾変
調度と光導電膜の単位面積当りの蓄積容量の関係を示す
図、第３図は、電子銃ビーム制限孔を小さくし、かつ光
伝導膜の蓄積容量を増した2/3インチ形撮像管における
振巾変調度と、メッシュと光導電膜間の距離との関係を
示す図、第４図は、電子銃ビーム制限孔の断面構造の１
実施例を示す図である。 ２……走査電子ビーム、４……電子銃ビーム制限孔、５
……光導電膜、６……メッシュ電極。FIG. 1 is a schematic cross-sectional view of an image pickup tube for explaining the present invention, and FIG. 2 shows a 2/3 inch type image pickup tube having a small electron gun beam limiting hole when operated with 1125 scanning lines. Fig. 3 shows the relationship between the amplitude modulation degree and the storage capacity per unit area of the photoconductive film. Fig. 3 shows the 2/3 inch type in which the electron gun beam limiting hole is made smaller and the storage capacity of the photoconductive film is increased. FIG. 4 is a diagram showing the relationship between the amplitude modulation degree in the image pickup tube and the distance between the mesh and the photoconductive film, and FIG.
It is a figure which shows an Example. 2 ... Scanning electron beam, 4 ... Electron gun beam limiting hole, 5
...... Photoconductive film, 6 ...... Mesh electrode.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 丸山 優徳 東京都国分寺市東恋ヶ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 野中 育光 千葉県茂原市早野3300番地 株式会社日立 製作所茂原工場内 (72)発明者 井上 栄典 千葉県茂原市早野3300番地 株式会社日立 製作所茂原工場内 (72)発明者 加藤 真一 千葉県茂原市早野3300番地 株式会社日立 製作所茂原工場内 (72)発明者 設楽 圭一 東京都世田谷区砧１丁目10番11号 日本放 送協会放送技術研究所内 (72)発明者 倉重 光宏 東京都世田谷区砧１丁目10番11号 日本放 送協会放送技術研究所内 (72)発明者 谷岡 健吉 東京都世田谷区砧１丁目10番11号 日本放 送協会放送技術研究所内 (72)発明者 岡崎 三郎 東京都世田谷区砧１丁目10番11号 日本放 送協会放送技術研究所内 (72)発明者 山崎 順一 東京都世田谷区砧１丁目10番11号 日本放 送協会放送技術研究所内 (72)発明者 江上 典文 東京都世田谷区砧１丁目10番11号 日本放 送協会放送技術研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yusunori Maruyama 1-280, Higashi Koigakubo, Kokubunji, Tokyo Inside Central Research Laboratory, Hitachi, Ltd. (72) Ikumitsu Nonaka 3300, Hayano, Mobara-shi, Chiba Hitachi, Ltd. Mobara In-house (72) Inventor Eisuke Inoue 3300 Hayano, Mobara-shi, Chiba Hitachi Ltd. Mobara factory (72) Inventor Shinichi Kato 3300 Hayano, Mobara-shi, Chiba Hitachi Ltd. Mobara factory (72) Inventor Shitara Keiichi 1-10-11 Kinuta, Setagaya-ku, Tokyo Within the Japan Broadcasting Corporation's Broadcast Technology Laboratory (72) Inventor Mitsuhiro Kurashige 1-10-11 Kinuta, Setagaya-ku, Tokyo Within the Japan Broadcasting Corporation's Broadcasting Technology Laboratory (72) Invention Ken Tanioka, 1-10-11 Kinuta, Setagaya-ku, Tokyo, Japan Broadcasting Corporation Broadcasting Technology Laboratory (72) Inventor Saburo Okazaki 1-10-11 Kinuta, Setagaya-ku, Tokyo Inside the Broadcasting Technology Laboratory, Japan Broadcasting Corporation (72) Inventor Junichi Yamazaki 1-10-11 Kineta, Setagaya-ku, Tokyo Inside the Broadcasting Technology Laboratory, Japan Broadcasting Association (72) Inventor Norifumi Egami 1-10-11 Kinuta, Setagaya-ku, Tokyo Inside Japan Broadcasting Corporation Broadcasting Technology Laboratory
Claims (3)
されたメッシュ電極と、走査電子ビームを発射する電子
銃を備えた撮像管において、前記電子銃の電子ビーム制
限孔の直径は５μｍ以上25μｍ以下であり、前記光導電
膜はその少なくとも一部に膜厚0.35μｍ以上3.5μｍ以
下のSeを主体とする非晶質膜を有し、且つ前記光導電膜
の蓄積容量は15μF/m2以上150μF/m2以下であることを
特徴とする撮像管。1. An image pickup tube comprising a photoconductive film, a mesh electrode provided so as to face the photoconductive film, and an electron gun for emitting a scanning electron beam, the diameter of an electron beam limiting hole of the electron gun. Is 5 μm or more and 25 μm or less, and the photoconductive film has an amorphous film mainly composed of Se with a film thickness of 0.35 μm or more and 3.5 μm or less in at least a part thereof, and the storage capacitance of the photoconductive film is 15 μF. An image pickup tube characterized by being / m 2 or more and 150 μF / m 2 or less.
ムが入射する入口から出口に向かってテーパー状に広が
っている特許請求の範囲第１項記載の撮像管。2. The image pickup tube according to claim 1, wherein the electron beam limiting hole is tapered from an entrance into which the scanning electron beam is incident to an exit thereof.
は1mm以上3mm以下である特許請求の範囲第１項又は第２
項記載の撮像管。3. The distance between the photoconductive layer and the mesh electrode is not less than 1 mm and not more than 3 mm.
The image pickup tube described in the item.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12797886A JPH0789473B2 (en) | 1986-06-04 | 1986-06-04 | Camera tube |
| EP87108095A EP0248426B1 (en) | 1986-06-04 | 1987-06-04 | TV pick-up tube |
| DE19873750491 DE3750491T2 (en) | 1986-06-04 | 1987-06-04 | TV camera tube. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12797886A JPH0789473B2 (en) | 1986-06-04 | 1986-06-04 | Camera tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62285350A JPS62285350A (en) | 1987-12-11 |
| JPH0789473B2 true JPH0789473B2 (en) | 1995-09-27 |
Family
ID=14973402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12797886A Expired - Lifetime JPH0789473B2 (en) | 1986-06-04 | 1986-06-04 | Camera tube |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0248426B1 (en) |
| JP (1) | JPH0789473B2 (en) |
| DE (1) | DE3750491T2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3426235A (en) * | 1966-12-20 | 1969-02-04 | Rca Corp | Pickup device |
| DE2129176A1 (en) * | 1971-06-11 | 1973-01-04 | Siemens Ag | LIGHT-SENSITIVE TARGET FOR A VIDIKON PICTURE EARN |
-
1986
- 1986-06-04 JP JP12797886A patent/JPH0789473B2/en not_active Expired - Lifetime
-
1987
- 1987-06-04 DE DE19873750491 patent/DE3750491T2/en not_active Expired - Lifetime
- 1987-06-04 EP EP87108095A patent/EP0248426B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0248426A2 (en) | 1987-12-09 |
| JPS62285350A (en) | 1987-12-11 |
| EP0248426A3 (en) | 1989-05-03 |
| EP0248426B1 (en) | 1994-09-07 |
| DE3750491D1 (en) | 1994-10-13 |
| DE3750491T2 (en) | 1995-01-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |