JPH0783134B2 - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPH0783134B2 JPH0783134B2 JP19040487A JP19040487A JPH0783134B2 JP H0783134 B2 JPH0783134 B2 JP H0783134B2 JP 19040487 A JP19040487 A JP 19040487A JP 19040487 A JP19040487 A JP 19040487A JP H0783134 B2 JPH0783134 B2 JP H0783134B2
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- region
- type region
- photoelectric conversion
- conversion device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は、カメラ等のオート・フォーカス・システムと
して使用する光電変換装置に関するものである。TECHNICAL FIELD The present invention relates to a photoelectric conversion device used as an auto focus system for a camera or the like.
（従来の技術） 第４図（ａ）は従来の光電変換装置の平面図、第４図
（ｂ）は第４図（ａ）の光電変換装置の中央縦断面図
で、１はｎ形の半導体基板、２は半導体基板１と同一の
導電形、即ちｎ形の第１の導電形領域で、この第１の導
電形領域２は半導体基板１の上に設けられている。３及
び４は半導体基板１の導電形と異なる導電形、即ちｐ形
の矩形の第２の導電形領域で、この第２の導電形領域３
及び４は、所定の幅の分離帯５を介して対向し、且つ、
その分離帯５が、入射スポット光の走査方向〔第４図
（ａ）においてＡ−Ａ線方向〕に対して直角になるよう
に、第１の導電形領域２の表面に配設されている。(Prior Art) FIG. 4 (a) is a plan view of a conventional photoelectric conversion device, FIG. 4 (b) is a central vertical sectional view of the photoelectric conversion device of FIG. 4 (a), and 1 is an n-type. The semiconductor substrate 2 is a first conductivity type region having the same conductivity type as the semiconductor substrate 1, that is, an n type, and the first conductivity type region 2 is provided on the semiconductor substrate 1. Reference numerals 3 and 4 denote conductivity types different from the conductivity type of the semiconductor substrate 1, that is, p-shaped rectangular second conductivity type regions.
And 4 are opposed to each other via a separator 5 having a predetermined width, and
The separation band 5 is arranged on the surface of the first conductivity type region 2 so that it is perpendicular to the scanning direction of the incident spot light [the direction of the line AA in FIG. 4 (a)]. .
このように構成された従来例では、入射スポット光をＡ
−Ａ線方向に走査すると、入射スポット光の移動に伴っ
て第２の導電形領域３及び４からそれぞれ第５図に示す
ような出力信号が出力される。In the conventional example configured in this way, the incident spot light is
When scanning is performed in the −A line direction, the output signals as shown in FIG. 5 are output from the second conductivity type regions 3 and 4 as the incident spot light moves.
（発明が解決しようとする問題点） ところで、光電変換装置における出力信号の変化は、第
２の導電形領域３及び４に入射する入射スポット光の面
積の変化に比例するため、従来の光電変換装置では、入
射スポット光を走査したときの出力信号が連続的に変化
せず、而も、分離帯５を介しての出力信号の変化を第２
の導電形領域３の出力信号と第２の導電形領域４の出力
信号との比で読み出す方法を採っているので、直線性の
優れた変化領域の幅が狭くなって、３の信号と４の信号
との交点の検出精度が低下するため、演算回路等の周辺
回路が複雑になって、オート・フォーカス・システムの
製造原価が高くなると共に、オート・フォーカス・シス
テムの応答速度が遅くなるという問題があった。(Problems to be Solved by the Invention) By the way, since the change of the output signal in the photoelectric conversion device is proportional to the change of the area of the incident spot light incident on the second conductivity type regions 3 and 4, the photoelectric conversion device of the related art does not have such a structure. In the device, the output signal when the incident spot light is scanned does not change continuously, and the change of the output signal through the separation band 5 does not change.
Since the method of reading is performed by the ratio of the output signal of the conductivity type region 3 and the output signal of the second conductivity type region 4, the width of the change region having excellent linearity is narrowed, and the signals of 3 and 4 are reduced. Since the detection accuracy of the intersection with the signal of will be complicated, peripheral circuits such as arithmetic circuits will be complicated, the manufacturing cost of the auto focus system will be high, and the response speed of the auto focus system will be slow. There was a problem.
本発明は、このような問題に鑑みてなされたもので、広
い範囲で連続的に変化し、而も直線性に優れた出力信号
を出力する光電変換装置を提供することを目的としてい
る。The present invention has been made in view of such a problem, and an object thereof is to provide a photoelectric conversion device that continuously outputs a wide range and outputs an output signal having excellent linearity.
（問題点を解決するための手段） 本発明は、半導体基板に設けた第１の導電形領域と、光
で走査したときに信号を出力する出力変換領域が矩形に
なるようにして第１の導電形領域に設けた第２の導電形
領域と、光の走査幅軌跡に対して直接的に傾斜した状態
で交差するように出力変換領域の一方の対角線に沿って
設けて、出力変換領域を対称形に２分した分離帯とから
なるものである。(Means for Solving the Problems) In the present invention, the first conductivity type region provided on the semiconductor substrate and the output conversion region for outputting a signal when scanning with light are formed into a rectangular shape. The output conversion region is provided along one diagonal of the output conversion region so as to intersect with the second conductivity type region provided in the conductivity type region in a state of being directly inclined with respect to the scanning width locus of light. It consists of a symmetric bisecting separator.
（作 用） 本願発明の光電変換装置を入射光で横方向に走査する
と、第２の導電形領域の面積が連続的に変化して、第２
の導電形領域に入射する入射光の面積も連続的に変化す
るので、広い範囲で連続的に変化し、而も直線性に優れ
た出力信号が得られる。(Operation) When the photoelectric conversion device of the present invention is laterally scanned with incident light, the area of the second conductivity type region is continuously changed to
Since the area of the incident light incident on the conductivity type region also continuously changes, it continuously changes in a wide range, and an output signal excellent in linearity can be obtained.
（実施例） 第１図（ａ）は本発明の一実施例における一具体例の平
面図、第１図（ｂ）は第１図（ａ）の一具体例の中央縦
断面図で、第４図（ａ）及び（ｂ）の符号と同一符号の
ものは同一部分を示しており、又、６及び７は半導体基
板１の導電形と異なる導電形、即ちｐ形の三角形の第２
の導電形領域で、この第２の導電形領域６及び７は、所
定の幅の分離帯５を介して対向し、且つ、その分離帯５
が、入射スポット光の走査方向〔第１図（ａ）において
Ａ−Ａ線方向〕に対して直線的に傾斜するように、第１
の導電形領域２の表面に配設されている。そして、第２
の導電形領域６及び７の出力変換領域は矩形であり、入
射スポット光の走査幅（ｙ方向）軌跡と交差する分離帯
５は出力変換領域の一方の対角線に沿って設けられてい
る。(Embodiment) FIG. 1 (a) is a plan view of a specific example of an embodiment of the present invention, and FIG. 1 (b) is a central longitudinal sectional view of a specific example of FIG. 1 (a). 4 that have the same reference numerals as those in FIGS. 4A and 4B indicate the same portions, and 6 and 7 have a conductivity type different from that of the semiconductor substrate 1, that is, a second p-type triangle.
Of the conductivity type, the second conductivity type regions 6 and 7 face each other via a separation band 5 having a predetermined width, and
Is inclined linearly with respect to the scanning direction of the incident spot light [the line AA direction in FIG. 1 (a)].
Is disposed on the surface of the conductivity type region 2. And the second
The output conversion regions of the conductivity type regions 6 and 7 are rectangular, and the separation band 5 intersecting the scanning width (y direction) locus of the incident spot light is provided along one diagonal line of the output conversion region.
このように構成された本実施例において、例えば第２の
導電形領域６及び７の寸法ｘ及びｙが3.0mm×1.0mm、分
離帯５の幅が15μｍの光電変換装置を、直径が1mmの入
射スポット光でＡ−Ａ線方向に走査すると、第２図に示
すように、第２の導電形領域６の出力信号は直線的に減
少し、第２の導電形領域７の出力信号は逆に直線的に増
加する特性が得られると共に、出力変換領域の幅が広く
なる。In the present embodiment having such a configuration, for example, a photoelectric conversion device in which the dimensions x and y of the second conductivity type regions 6 and 7 are 3.0 mm × 1.0 mm and the width of the separation band 5 is 15 μm is set to be 1 mm in diameter. When scanning with the incident spot light in the AA line direction, the output signal of the second conductivity type region 6 decreases linearly and the output signal of the second conductivity type region 7 reverses as shown in FIG. In addition to the linearly increasing characteristic, the width of the output conversion region becomes wider.
第３図（ａ）は本発明の一実施例における他の具体例の
平面図、第３図（ｂ）は第３図（ａ）の他の具体例の中
央縦断面図で、第４図（ａ）及び（ｂ）の符号と同一符
号のものは同一部分を示しており、又、８及び９は半導
体基板１の導電形と異なる導電形、即ちｐ形の三角形に
近似した台形状の第２の導電形領域で、この第２の導電
形領域８及び９は、所定の幅の分離帯５を介して対向
し、且つ、その分離帯５が、入射スポット光の走査方向
〔第３図（ａ）においてＡ−Ａ線方向〕に対して直線的
に傾斜するように、第１の導電形領域２の表面に配設さ
れている。そして、第２の導電形領域６及び７の出力変
換領域は矩形であり、入射スポット光の走査幅（ｙ方
向）軌跡と交差する分離帯５は出力変換領域の一方の対
角線に沿って設けられている。FIG. 3 (a) is a plan view of another specific example in one embodiment of the present invention, FIG. 3 (b) is a central longitudinal sectional view of the other specific example of FIG. 3 (a), and FIG. The same reference numerals as those in (a) and (b) indicate the same parts, and 8 and 9 have a conductivity type different from that of the semiconductor substrate 1, that is, a trapezoidal shape approximate to a p-type triangle. In the second conductivity type region, the second conductivity type regions 8 and 9 are opposed to each other through a separation band 5 having a predetermined width, and the separation band 5 is a scanning direction [3rd It is arranged on the surface of the first conductivity type region 2 so as to be linearly inclined with respect to the AA line direction in FIG. The output conversion regions of the second conductivity type regions 6 and 7 are rectangular, and the separation band 5 that intersects the scanning width (y direction) locus of the incident spot light is provided along one diagonal line of the output conversion region. ing.
このように構成された本実施例において、例えば第２の
導電形領域８及び９の寸法ｘ及びｙが3.0mm×1.0mm、分
離帯５の幅が20μｍの光電変換装置を、直径が1mmの入
射スポット光でＡ−Ａ線方向に走査すると、第２図に示
すように、第２の導電形領域８の出力信号は直線的に減
少し、第２の導電形領域９の出力信号は逆に直線的に増
加する特性が得られると共に、出力変換領域の幅が広く
なる。In the present embodiment having such a configuration, for example, a photoelectric conversion device in which the dimensions x and y of the second conductivity type regions 8 and 9 are 3.0 mm × 1.0 mm and the width of the separation band 5 is 20 μm is set to 1 mm in diameter. When the incident spot light is scanned in the AA line direction, the output signal of the second conductivity type region 8 decreases linearly and the output signal of the second conductivity type region 9 reverses as shown in FIG. In addition to the linearly increasing characteristic, the width of the output conversion region becomes wider.
尚、分離帯５の形状を、凸凹にしたり、階段状にしたり
しても、第２図のような特性が得られるのは言うまでも
ない。Needless to say, the characteristics shown in FIG. 2 can be obtained even if the shape of the separation band 5 is uneven or stepwise.
又、第２の導電形領域の形状を、三角形に近似した矩形
にしても、同様の効果があることは言うまでもない。It goes without saying that the same effect can be obtained even if the shape of the second conductivity type region is a rectangle that is close to a triangle.
更に、本発明の具体例では、半導体基板及び第１の導電
形領域をｎ形に、第２の導電形領域をｐ形にした例で説
明したが、半導体基板及び第１の導電形領域をｐ形に、
第２の導電形領域をｎ形にしても、同様の効果が得られ
る。Furthermore, although the semiconductor substrate and the first conductivity type region are n-type and the second conductivity type region is p-type in the embodiment of the present invention, the semiconductor substrate and the first conductivity type region are p-type,
The same effect can be obtained even if the second conductivity type region is made n-type.
（発明の効果） 以上のように、本発明によれば、本発明の光電変換装置
を入射光で走査すると、直線性に優れた出力信号が広い
範囲で得られるので、２つの第２の導電形領域からそれ
ぞれ出力される信号の交点の検出精度が向上して、高分
解能なオート・フォーカス・システムが容易に実現でき
ると共に、演算回路等の周辺回路が簡素化されて、製造
原価が安く、且つ、応答速度の早いオート・フォーカス
・システムを容易に実現できるという効果がある。(Effects of the Invention) As described above, according to the present invention, when the photoelectric conversion device of the present invention is scanned with incident light, an output signal excellent in linearity can be obtained in a wide range. The detection accuracy of the intersection of the signals output from each shape region is improved, a high-resolution auto focus system can be easily realized, and peripheral circuits such as the arithmetic circuit are simplified, resulting in low manufacturing cost. In addition, there is an effect that an auto focus system having a fast response speed can be easily realized.
第１図（ａ）は本発明の一実施例における一具体例の平
面図、第１図（ｂ）は第１図（ａ）の一具体例の中央縦
断面図、第２図は本発明の一実施例における具体例を入
射光で走査したときの出力信号図、第３図（ａ）は本発
明の一実施例における他の具体例の平面図、第３図
（ｂ）は第３図（ａ）の他の具体例の中央縦断面図、第
４図（ａ）は従来の光電変換装置の平面図、第４図
（ｂ）は第４図（ａ）の光電変換装置の中央縦断面図、
第５図は従来の光電変換装置を入射光で走査したときの
出力信号図である。 １……半導体基板、２……第１の導電形領域、５……分
離帯、3,4,6,7,8,9……第２の導電形領域。FIG. 1 (a) is a plan view of a specific example in one embodiment of the present invention, FIG. 1 (b) is a central longitudinal sectional view of a specific example of FIG. 1 (a), and FIG. 2 is the present invention. FIG. 3 (a) is a plan view of another embodiment of the present invention, and FIG. 3 (b) is a third embodiment of the present invention. FIG. 4A is a plan view of a conventional photoelectric conversion device, and FIG. 4B is a center of the photoelectric conversion device of FIG. 4A. Longitudinal section,
FIG. 5 is an output signal diagram when a conventional photoelectric conversion device scans with incident light. 1 ... semiconductor substrate, 2 ... first conductivity type region, 5 ... separator, 3,4,6,7,8,9 ... second conductivity type region.
Claims (1)
になるようにして前記第１の導電形領域に設けた第２の
導電形領域と、 前記光の走査幅軌跡に対して直線的に傾斜した状態で交
差するように前記出力変換領域の一方の対角線に沿って
設けて、前記出力変換領域を対称形に２分した分離帯と が具備されていることを特徴とする光電変換装置。1. A first conductivity type region provided on a semiconductor substrate and a second conductivity type region provided on the first conductivity type region such that an output conversion region for outputting a signal when scanned with light is rectangular. Of the conductivity type region and the scan region of the light in a state of being linearly inclined and provided along one diagonal line of the output conversion region so that the output conversion region is symmetrically divided into two parts. A photoelectric conversion device, characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19040487A JPH0783134B2 (en) | 1987-07-31 | 1987-07-31 | Photoelectric conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19040487A JPH0783134B2 (en) | 1987-07-31 | 1987-07-31 | Photoelectric conversion device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6436088A JPS6436088A (en) | 1989-02-07 |
| JPH0783134B2 true JPH0783134B2 (en) | 1995-09-06 |
Family
ID=16257581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19040487A Expired - Lifetime JPH0783134B2 (en) | 1987-07-31 | 1987-07-31 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0783134B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2717839B2 (en) * | 1989-03-20 | 1998-02-25 | 松下電子工業株式会社 | Optical semiconductor device |
| JP4220058B2 (en) | 1998-06-30 | 2009-02-04 | 浜松ホトニクス株式会社 | Semiconductor position detector |
| JP4605419B2 (en) * | 2000-08-30 | 2011-01-05 | 株式会社トプコン | Beam position detector |
| JP6542095B2 (en) * | 2015-10-06 | 2019-07-10 | コーデンシ株式会社 | Light receiving device and position detecting device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2394683A1 (en) * | 1977-06-17 | 1979-01-12 | Renault | Carburettor for IC engine - has time delay on enrichment jet valve control to improve fuel consumption |
| JPS6166917A (en) * | 1984-09-10 | 1986-04-05 | Canon Inc | Photodetecting element for distance detection |
| JPS62123784A (en) * | 1985-11-22 | 1987-06-05 | Mitsubishi Electric Corp | Semiconductor photodetector |
| JPH067052B2 (en) * | 1986-07-18 | 1994-01-26 | 浜松ホトニクス株式会社 | Two-division type semiconductor position detector |
-
1987
- 1987-07-31 JP JP19040487A patent/JPH0783134B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6436088A (en) | 1989-02-07 |
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