JPH0781926A - Silicon dioxide coating film producing device - Google Patents

Silicon dioxide coating film producing device

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Publication number
JPH0781926A
JPH0781926A JP25235393A JP25235393A JPH0781926A JP H0781926 A JPH0781926 A JP H0781926A JP 25235393 A JP25235393 A JP 25235393A JP 25235393 A JP25235393 A JP 25235393A JP H0781926 A JPH0781926 A JP H0781926A
Authority
JP
Japan
Prior art keywords
tank
processing
liquid
silicon dioxide
soln
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25235393A
Other languages
Japanese (ja)
Inventor
Kuniaki Horie
邦明 堀江
Yoshitaka Mukoyama
佳孝 向山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP25235393A priority Critical patent/JPH0781926A/en
Publication of JPH0781926A publication Critical patent/JPH0781926A/en
Pending legal-status Critical Current

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  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemically Coating (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)

Abstract

PURPOSE:To reduce the dust adhering to a substrate and to easily obtain a high quality silicon dioxide coating film by providing a means for ercovering a processing soln. contg. silicon dioxide, etc., in a processing soln. regulating tank, a means for cleaning a treating tank, etc., on a specified device. CONSTITUTION:A substrate 3 to be treated is set in a treating tank 1, and the tank is filled with a processing soln. 2 including a hydrosilicofluoric acid soln. supersaturated with silicon dioxide. An activator 7 for maintaining the supersaturation of the soln. 2 is arranged in a processing soln. regulating tank 4. Further, a means for recovering the soln. 2 in the tank 1 by allowing the soln. to overflow and circulating the soln. through a pump 5 and a line 12, A means for circulating the soln. between a cleaning soln. storage tank 15 and the tank 1 through a cleaning soln. feed line 14 or for injecting the cleaning soln. into the tank 1 to clean it, a means for circulating the processing soln. recovered in the tank 4 through a circulating line 11 and a means for recovering the cleaning soln. to be circulated to the tank 1 in the tank 15 through a recovery line 13 or for discharging the soln. without recovering it are provided to constitute the silicon dioxide coating film producing device.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、二酸化珪素被膜の製造
装置に係り、特に半導体製造工程や液晶表示装置等の電
子部品製造工程で、半導体ウエハ或いはガラス基板等の
被処理基板上に二酸化珪素被膜を液相より生成する二酸
化珪素被膜の製造装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon dioxide coating manufacturing apparatus, and more particularly, to a silicon wafer on a substrate to be processed such as a semiconductor wafer or a glass substrate in a semiconductor manufacturing process or a manufacturing process of electronic parts such as a liquid crystal display device. The present invention relates to an apparatus for producing a silicon dioxide film that produces a film from a liquid phase.

【0002】[0002]

【従来の技術】係る二酸化珪素被膜の液相成膜法(LP
D法)は、室温近傍での温度で成膜が可能であり、サブ
ミクロンレベルの表面凹凸でも追随性良く、均一な厚み
の欠陥の少ない被膜が得られるため、近年その実用化が
検討されている。この二酸化珪素被膜の液相成膜法は、
例えば特開昭60−33233号公報、特開昭62−2
0876号公報等により提案されている。
2. Description of the Related Art A liquid phase film forming method (LP
Since the method D) can form a film at a temperature near room temperature and has a good followability even on a submicron level surface irregularity, a film with a uniform thickness and few defects can be obtained. There is. The liquid phase film forming method of this silicon dioxide film is
For example, JP-A-60-33233 and JP-A-62-2
It is proposed by Japanese Patent Publication No. 0876.

【0003】図8は、液相成膜法による二酸化珪素被膜
の製造装置の装置構成を示す説明図である。処理槽1に
は、被処理基板3である半導体基板又はガラス基板が装
填され、二酸化珪素の過飽和状態となった珪弗化水素酸
溶液を含む処理液2に浸漬され、基板3の表面には、二
酸化珪素被膜が析出される。処理液調整槽4では、処理
液2の二酸化珪素の過飽和状態を維持するために、アル
ミ、ホウ酸などの活性材7を溶解させる。
FIG. 8 is an explanatory diagram showing a device configuration of a device for producing a silicon dioxide film by a liquid phase film forming method. The processing tank 1 is loaded with a semiconductor substrate or a glass substrate which is the substrate 3 to be processed, and is immersed in a processing liquid 2 containing a hydrosilicofluoric acid solution in a supersaturated state of silicon dioxide. , A silicon dioxide film is deposited. In the treatment liquid adjusting tank 4, in order to maintain the supersaturated state of the silicon dioxide of the treatment liquid 2, the active material 7 such as aluminum or boric acid is dissolved.

【0004】二酸化珪素を過飽和に含む処理液に被処理
基板である例えば半導体ウエハを浸漬し、その表面に二
酸化珪素被膜を成膜する場合、処理液中で析出する二酸
化珪素等の粒子が成長して粗大化し、処理液中にいわゆ
るダストとして浮遊する。又、成膜中に処理液中に二酸
化珪素等の粒子が析出し、処理槽内壁、配管路内壁、処
理液調整槽内壁等に付着する。成膜の進行に伴い、壁面
に付着した粒子に更に粒子が析出し、壁面に付着した粒
子層の被膜も徐々に厚くなる。槽内壁或いは管路内壁に
付着した粒子層が剥離すると同様に処理液中に浮遊する
ダストとなる。このダストがウエハ表面に付着し、半導
体装置の歩止まりを下げてしまうことがしばしばある。
When a substrate to be processed, for example, a semiconductor wafer is immersed in a processing solution containing silicon dioxide in a supersaturated state and a silicon dioxide film is formed on the surface thereof, particles of silicon dioxide or the like that precipitate in the processing solution grow. Coarsely coarsens and floats as so-called dust in the treatment liquid. Further, particles such as silicon dioxide are deposited in the treatment liquid during film formation and adhere to the inner wall of the treatment tank, the inner wall of the pipe passage, the inner wall of the treatment liquid adjusting tank, and the like. As the film formation progresses, particles are further deposited on the particles attached to the wall surface, and the film of the particle layer attached to the wall surface gradually becomes thicker. When the particle layer adhering to the inner wall of the tank or the inner wall of the pipe is peeled off, it also becomes dust floating in the processing liquid. This dust often adheres to the surface of the wafer and reduces the yield of semiconductor devices.

【0005】そこで処理液2中の二酸化珪素粒子等のダ
ストを除去するため、循環手段5と、濾過手段6を設
け、処理液を循環濾過することが行われている。循環手
段としては脈動が無く、濾過に悪影響を与えない、又循
環流量が比較的多くとれるポンプが使用されている。濾
過手段としては孔径0.05〜1μm程度のフィルタが
用いられる。又、フィルタを洗浄装置に組み込み、フィ
ルタが目づまると自動的に洗浄することも行われてい
る。
Therefore, in order to remove dust such as silicon dioxide particles in the treatment liquid 2, a circulation means 5 and a filtration means 6 are provided to circulate and filter the treatment liquid. As a circulation means, a pump is used which has no pulsation, does not adversely affect filtration, and has a relatively large circulation flow rate. A filter having a pore size of about 0.05 to 1 μm is used as the filtering means. In addition, a filter is built in a cleaning device and automatically cleaned when the filter becomes clogged.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、図1に
示すような二酸化珪素被膜の製造装置の装置構成では、
成膜速度が遅く、例えば10〜20オングストローム/
minの成膜速度で、成膜するのに非常に時間を要して
しまう。このように成膜速度が遅いと、一回の成膜処理
を行うと、槽内壁或いは管路内壁は、付着した二酸化珪
素の粒子層等によりかなり汚染される。このような状態
で、第2回目、第3回目の成膜を行うと、処理液中には
いわゆるダストの量が増大し、被処理基板に形成される
二酸化珪素被膜に欠陥を発生させることとなる。
However, in the apparatus configuration of the apparatus for producing a silicon dioxide film as shown in FIG.
The film forming rate is slow, for example, 10 to 20 angstrom /
It takes a very long time to form a film at a film forming rate of min. When the film forming speed is low as described above, the inner wall of the tank or the inner wall of the conduit is considerably contaminated by the adhered particle layer of silicon dioxide and the like when the film forming process is performed once. When the second and third film formations are performed in such a state, the amount of so-called dust in the processing liquid increases, which causes defects in the silicon dioxide film formed on the substrate to be processed. Become.

【0007】従来はある一定回数の成膜処理を継続さ
せ、処理槽壁面にある一定量の二酸化珪素等の粒子層の
付着(汚染)が進行した後、処理液全液を排出し、処理
槽、処理液調整槽、循環路の配管路等を洗浄していた。
このため、成膜回数が増すと、処理槽内壁からの二酸化
珪素の粒子層の剥離による処理液へのダストの量が増大
し、被処理基板へのダストの付着が問題となっていた。
この問題を避けるために、一回の成膜ごとに処理槽の洗
浄を行うと、高価な処理液を洗浄ごとに全量排出して廃
棄しなければならなくなり、更に次の成膜のために、必
要な処理液の過飽和度に達するために、活性材の溶解等
に時間を要するという問題が生じる。又、処理液のみを
抽出し別のタンク等に保管しておくと、処理液の過飽和
度が低下し、成膜速度も下がりすぐに再利用することが
できない。また別タンクのスペースが新たに装置内に必
要となり装置が大きくなってしまう。
Conventionally, the film forming process is continued a certain number of times, and after a certain amount of a particle layer of silicon dioxide or the like on the wall surface of the process tank adheres (contaminates), the whole processing solution is discharged and the processing tank is discharged. The processing solution adjusting tank and the circulation pipes were washed.
Therefore, as the number of times of film formation increases, the amount of dust in the processing liquid due to the separation of the silicon dioxide particle layer from the inner wall of the processing tank increases, and the adhesion of dust to the substrate to be processed becomes a problem.
In order to avoid this problem, if the processing tank is cleaned after each film formation, the expensive processing liquid must be completely discharged and discarded after each cleaning, and for the next film formation, In order to reach the required degree of supersaturation of the processing liquid, there arises a problem that it takes time to dissolve the active material. Further, if only the treatment liquid is extracted and stored in another tank or the like, the supersaturation degree of the treatment liquid is lowered, the film forming speed is lowered, and the treatment liquid cannot be reused immediately. In addition, a space for another tank is newly required inside the device, and the device becomes large.

【0008】本発明は、係る従来技術の問題点に鑑み為
されたもので、一回の成膜ごとに処理槽の洗浄が可能
で、且つ処理槽の洗浄中に成膜に必要な処理液の過飽和
度等の状態を劣化させず、洗浄終了後直ちに成膜処理を
再開することのできる二酸化珪素被膜の製造装置を提供
することを目的とする。
The present invention has been made in view of the problems of the prior art, and it is possible to clean the processing tank after each film formation, and a processing solution necessary for film formation during cleaning of the processing tank. It is an object of the present invention to provide a silicon dioxide film manufacturing apparatus capable of restarting the film forming process immediately after the completion of cleaning without deteriorating the state of supersaturation and the like.

【0009】[0009]

【課題を解決するための手段】本発明の二酸化珪素被膜
の製造装置は、二酸化珪素の過飽和状態となった珪弗化
水素酸溶液を含む処理液と、該処理液を被処理基板と接
触させて該基板表面に二酸化珪素被膜を析出させる処理
槽と、前記処理液の二酸化珪素の過飽和状態を維持する
ために活性材を溶解させる処理液調整槽と、前記処理液
を前記処理槽と前記処理液調整槽に循環させる循環手段
と、該処理液の循環路に配置された濾過手段とを備えた
二酸化珪素被膜の製造装置において、前記処理槽内の処
理液を前記処理液調整槽に回収する手段と、洗浄液貯留
槽と前記処理槽間に洗浄液を循環させあるいは前記処理
槽へ洗浄液を注入させ処理槽を洗浄する手段と、前記処
理液調整槽に回収された処理液を循環させ過飽和度等の
状態を維持する手段と、前記処理槽に循環する洗浄液を
前記洗浄液貯留槽に回収するあるいは洗浄後に回収せず
に排出する手段とを備えたことを特徴とする。
SUMMARY OF THE INVENTION An apparatus for producing a silicon dioxide film according to the present invention comprises a treatment liquid containing a hydrosilicofluoric acid solution in which silicon dioxide is supersaturated, and the treatment liquid being brought into contact with a substrate to be treated. Processing tank for depositing a silicon dioxide film on the surface of the substrate, a processing solution adjusting tank for dissolving an active material to maintain a supersaturated state of the silicon dioxide of the processing solution, the processing solution, and the processing tank In a device for producing a silicon dioxide film, which comprises a circulation means for circulating the solution in the solution adjusting tank and a filtering means arranged in a circulation path for the solution, the processing solution in the processing tank is recovered in the processing solution adjusting tank. Means, means for circulating the cleaning liquid between the cleaning liquid storage tank and the processing tank or for injecting the cleaning liquid into the processing tank to clean the processing tank, and circulating the processing liquid recovered in the processing liquid adjusting tank for supersaturation, etc. Hand to maintain the state of When, characterized in that a means for discharging the washing liquid circulating in the treatment tank without recovery after the recovery is or washing the cleaning liquid reservoir.

【0010】[0010]

【作用】処理槽内の処理液を処理液調整槽に回収して、
空になった処理槽に洗浄液貯留槽に蓄えられた洗浄液を
循環させあるいは保持、通過させ処理槽を洗浄すること
ができる。そして、処理槽の洗浄中に処理液調整槽に回
収された処理液を、処理液調整槽に循環させる手段を備
えることから、処理液の過飽和状態等をそのまま維持す
ることができる。更に処理槽に循環する洗浄液を洗浄液
貯留槽に回収するあるいは保持、通過させた洗浄液を排
出する手段を備えることから、洗浄終了後には洗浄液を
回収し、水洗後、処理液を再び処理液調整槽から処理槽
に循環させ、次の成膜に移行することができる。
[Operation] The processing liquid in the processing tank is collected in the processing liquid adjusting tank,
The cleaning liquid stored in the cleaning liquid storage tank can be circulated, held, or passed through the empty processing tank to clean the processing tank. Since the processing liquid collected in the processing liquid adjusting tank during the cleaning of the processing tank is provided in the processing liquid adjusting tank, a supersaturated state of the processing liquid can be maintained as it is. Further, since a means for collecting or retaining the cleaning liquid circulating in the processing tank in the cleaning liquid storage tank and discharging the passed cleaning liquid is provided, the cleaning liquid is collected after the completion of cleaning, washed with water, and then the processing liquid is again prepared in the processing liquid adjusting tank. It is possible to circulate the product from the above into the processing tank and shift to the next film formation.

【0011】このようにして、処理槽を成膜ごとに毎回
洗浄し、且つ洗浄の間に処理液は過飽和状態等を維持し
たまま保存される。従って、高価な処理液を廃棄するこ
となく、処理槽の洗浄後に直ちに次の成膜を行うことが
できる。
In this way, the processing bath is cleaned every time a film is formed, and during the cleaning, the processing liquid is stored while maintaining a supersaturated state. Therefore, the next film formation can be performed immediately after cleaning the processing tank without discarding the expensive processing liquid.

【0012】[0012]

【実施例】以下、本発明の一実施例を添付図1乃至図7
を参照しながら説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will now be described with reference to FIGS.
Will be described with reference to.

【0013】本実施例においては、成膜を行う主循環路
8の他に、処理液循環ライン11、処理液回収ライン1
2、洗浄液回収ライン13、洗浄液供給ライン14等の
各種の処理液及び洗浄液の循環接続路を備えている。
In the present embodiment, in addition to the main circulation path 8 for film formation, the treatment liquid circulation line 11 and the treatment liquid recovery line 1
2, a cleaning liquid recovery line 13, a cleaning liquid supply line 14, and the like, and various processing liquids and cleaning liquid circulation connection paths.

【0014】図1は、主循環賂8の処理液の流れを白い
矢印で示す。成膜を行う主循環賂8では、処理液は処理
液調整槽4で活性材7が溶解されることにより過飽和度
が高められ、処理液はポンプP1 で循環され、2個のフ
ィルタF1 ,F2 の一方を通り濾過され、処理槽1に入
り、被処理基板3上に二酸化珪素被膜を析出させる。ポ
ンプP1 で圧送された処理液は、処理槽1をオーバフロ
ーして処理液調整槽4に流入する。本実施例の処理液調
整槽4は、従来の技術で示す処理液調整槽4よりも処理
槽の処理液を回収できるようにその分Qだけ容量が大き
くなっている。
FIG. 1 shows the flow of the treatment liquid in the main circulation casing 8 by white arrows. In the main circulation box 8 for forming a film, the treatment liquid is increased in supersaturation by dissolving the active material 7 in the treatment liquid adjusting tank 4, and the treatment liquid is circulated by the pump P 1 and the two filters F 1 , F 2 through one of the two , and enters into the processing tank 1 to deposit a silicon dioxide film on the substrate 3 to be processed. The processing liquid pumped by the pump P 1 overflows the processing tank 1 and flows into the processing liquid adjusting tank 4. The processing liquid adjusting tank 4 of this embodiment has a capacity Q larger than that of the conventional processing liquid adjusting tank 4 so that the processing liquid in the processing tank can be collected.

【0015】図2は、処理液回収ライン12の処理液の
流れを白い矢印で示す。1回の成膜処理終了後、被処理
基板3を処理槽1から引き上げ、処理槽1の洗浄を行
う。処理槽1の洗浄に先立ち、処理槽1内の処理液を処
理液調整槽4に回収する。処理液の回収は、処理液回収
ライン12に従い、白い矢印で示すようにポンプP3
より循環され、バルブV2 が開となり処理槽1内の処理
液が処理液調整槽4に送られる。なお、成膜処理後、処
理液調整槽4の処理液を循環させるポンプP1 は停止し
ており、処理槽1内の処理液が全量処理液調整槽4に回
収される。
FIG. 2 shows the flow of the processing liquid in the processing liquid recovery line 12 by white arrows. After completion of one film forming process, the substrate 3 to be processed is pulled out from the processing bath 1 and the processing bath 1 is washed. Prior to cleaning the treatment tank 1, the treatment liquid in the treatment tank 1 is collected in the treatment liquid adjusting tank 4. The recovery of the processing liquid is circulated along the processing liquid recovery line 12 by the pump P 3 as shown by the white arrow, the valve V 2 is opened, and the processing liquid in the processing tank 1 is sent to the processing liquid adjusting tank 4. After the film forming process, the pump P 1 that circulates the processing liquid in the processing liquid adjusting tank 4 is stopped, and the entire amount of the processing liquid in the processing tank 1 is collected in the processing liquid adjusting tank 4.

【0016】図3は、処理液調整槽循環ライン11の処
理液の流れを白い矢印で示す。処理液が処理液調整槽4
に回収された後で、ポンプP1 により処理液調整槽4の
処理液は、バルブV5 からフィルタF1 を通り、バルブ
6 から処理液調整槽4に戻される。この処理液循環ラ
イン11により、処理液調整槽4で活性材7が溶解さ
れ、処理液の過飽和度が維持される。又、温度調整器9
により成膜に好適な温度である20〜50℃程度に処理
液の液温が維持される。又、処理液は通常の成膜時と同
様にフィルタF1 で濾過され、処理液中の二酸化珪素の
粒子、ダストが除去され、処理液は成膜時と同様の、直
ちに成膜可能な状態に維持される。
FIG. 3 shows the flow of the processing liquid in the processing liquid adjusting tank circulation line 11 with white arrows. Treatment liquid is treatment liquid adjustment tank 4
After being collected, the processing liquid of the processing liquid adjusting tank 4 by the pump P 1 is passed through the filter F 1 from the valve V 5, it is returned from the valve V 6 to the processing liquid adjusting tank 4. By this treatment liquid circulation line 11, the active material 7 is dissolved in the treatment liquid adjusting tank 4, and the supersaturation degree of the treatment liquid is maintained. Also, the temperature controller 9
As a result, the liquid temperature of the processing liquid is maintained at about 20 to 50 ° C. which is a suitable temperature for film formation. Further, the treatment liquid is filtered by the filter F 1 in the same manner as in the case of normal film formation, particles of silicon dioxide and dust in the treatment liquid are removed, and the treatment liquid is in a state ready for film formation similar to that during film formation. Maintained at.

【0017】図4は、洗浄液の循環ライン14を示し、
図中の黒い矢印は洗浄液の流れを示す。洗浄液としては
弗酸(HF)が用いられ、弗酸は二酸化珪素粒子を溶解
し、処理槽内壁及び配管路内壁等に付着した粒子層(汚
れ)を除去する。洗浄液は貯留槽15に貯留され、処理
槽1内の処理液が処理液調整槽4に回収され空になった
後の処理槽1の洗浄を、洗浄液を循環あるいは保持、通
過させることにより行う。図中の黒い矢印が示すよう
に、洗浄液は貯留槽15からポンプP2 で循環され、バ
ルブV7 、フィルタF2 、バルブV8 を通り、処理槽1
に入る。洗浄液は処理槽内壁及び配管路内壁で二酸化珪
素の粒子を溶解し、粒子層の汚れを除去して、バルブV
1 バルブV9 を通り、洗浄液貯留槽15に戻される。
FIG. 4 shows the cleaning liquid circulation line 14.
The black arrow in the figure indicates the flow of the cleaning solution. Hydrofluoric acid (HF) is used as the cleaning liquid, and the hydrofluoric acid dissolves silicon dioxide particles and removes a particle layer (dirt) adhering to the inner wall of the processing tank, the inner wall of the pipeline, and the like. The cleaning liquid is stored in the storage tank 15, and the cleaning of the processing tank 1 after the processing liquid in the processing tank 1 is collected in the processing liquid adjusting tank 4 and emptied is performed by circulating, holding, or passing the cleaning liquid. As indicated by the black arrow in the figure, the cleaning liquid is circulated from the storage tank 15 by the pump P 2 , passes through the valve V 7 , the filter F 2 , and the valve V 8, and then passes through the processing tank 1.
to go into. The cleaning liquid dissolves the particles of silicon dioxide on the inner wall of the processing tank and the inner wall of the pipe, removes the dirt on the particle layer, and the valve V
It is returned to the cleaning liquid storage tank 15 through one valve V 9 .

【0018】図5は、洗浄液回収ライン13の洗浄液の
流れを黒い矢印で示す。処理槽1の洗浄が終了すると、
ポンプP2 が停止し、洗浄液の循環が停止される。そし
て、バルブV3 、V9 が開かれ、処理槽1内の洗浄液は
自然落下し、洗浄液貯留槽15に回収される。
FIG. 5 shows the flow of the cleaning liquid in the cleaning liquid recovery line 13 by a black arrow. When the cleaning of the processing tank 1 is completed,
The pump P 2 is stopped and the circulation of the cleaning liquid is stopped. Then, the valves V 3 and V 9 are opened, and the cleaning liquid in the processing tank 1 spontaneously drops and is collected in the cleaning liquid storage tank 15.

【0019】図6は、洗浄液による処理槽の洗浄が終了
した後に、純水による水洗の流れを矢印で示す。純水の
流れは、純水の供給口18からバルブ10が開かれ、バ
ルブV7 、フィルタF2 、バルブV8 、を通り処理槽1
内に流入する。そして、バルブV1 が開かれ、バルブV
3 、V9 が閉じられていることから、処理槽1を洗浄し
た純水はオーバフローしてバルブV1 からドレン17に
抜ける。純水による水洗で、処理槽1及び配管路に残留
した弗酸(HF)が水に溶解され除去される。
FIG. 6 shows by arrows the flow of washing with pure water after the washing of the treatment tank with the washing liquid is completed. The pure water flows through the valve 10 from the pure water supply port 18, passes through the valve V 7 , the filter F 2 , and the valve V 8 , and the processing tank 1
Flows in. Then, the valve V 1 is opened and the valve V 1
Since 3 , V 9 are closed, the pure water used to wash the processing tank 1 overflows and drains from the valve V 1 to the drain 17. By washing with pure water, the hydrofluoric acid (HF) remaining in the processing tank 1 and the pipeline is dissolved in water and removed.

【0020】図7は、水洗終了後の処理槽から純水を排
水する流れを矢印で示す。バルブV1 、V3 が開かれ、
処理槽1中の純水は、自然落下によりドレン17に抜け
る。純水による洗浄で洗浄工程をすべて終了し、バルブ
1 、V3 が閉じられ、三方弁V6 の方向が処理液調整
槽循環ライン11から変換され、主循環賂8に戻され
る。そして、処理液調整槽4を循環していた処理液は、
処理槽1に送られ主循環路8を循環する。処理槽1に被
処理基板3を装填することにより、洗浄により清浄化さ
れた処理槽1で次の成膜を行うことができる。
FIG. 7 shows with arrows the flow of draining pure water from the treatment tank after the washing with water. The valves V 1 and V 3 are opened,
The pure water in the processing tank 1 will fall to the drain 17 by spontaneous fall. All the cleaning steps are completed by cleaning with pure water, the valves V 1 and V 3 are closed, the direction of the three-way valve V 6 is converted from the processing liquid adjusting tank circulation line 11, and returned to the main circulation casing 8. The processing liquid circulating in the processing liquid adjusting tank 4 is
It is sent to the processing tank 1 and circulates in the main circulation path 8. By loading the substrate 3 to be processed in the processing tank 1, the next film can be formed in the processing tank 1 cleaned by cleaning.

【0021】[0021]

【発明の効果】以上に説明したように、本発明の二酸化
珪素被膜の製造装置によれば、成膜終了毎の毎回の洗浄
が可能であり、処理槽内の被処理基板へ付着するダスト
の量を低減し、良質な二酸化珪素被膜を成膜させること
ができる。また、処理槽の洗浄中に、処理液をただちに
成膜可能な状態に維持できるため、次の成膜を行う迄の
無駄な時間がなく、成膜処理を連続して行うことが可能
である。又、処理液保存中の過飽和度の維持、温度の維
持、或いは処理液中に生じるダストの量を、既存の処理
液調整槽及び循環手段、濾過手段を用いて維持すること
ができるので、比較的簡単な循環路等の増設のみにより
本発明を実施することが可能である。
As described above, according to the apparatus for producing a silicon dioxide film of the present invention, cleaning can be performed every time the film formation is completed, and dust adhered to the substrate to be processed in the processing tank can be removed. The amount can be reduced and a high-quality silicon dioxide film can be formed. Further, since the processing liquid can be immediately maintained in a state capable of forming a film during the cleaning of the processing tank, it is possible to continuously perform the film forming process without wasting time until the next film formation. . In addition, since it is possible to maintain the supersaturation degree during storage of the treatment liquid, maintain the temperature, or maintain the amount of dust generated in the treatment liquid by using the existing treatment liquid adjusting tank, circulation means, and filtration means, comparison The present invention can be implemented only by adding a simple circulation path.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の二酸化珪素被膜の製造装置
の装置構成を示す説明図であり、図中白い矢印は被処理
基板に成膜を行う主循環路を示す。
FIG. 1 is an explanatory diagram showing a device configuration of a silicon dioxide film manufacturing apparatus according to an embodiment of the present invention, in which a white arrow indicates a main circulation path for forming a film on a substrate to be processed.

【図2】本発明の一実施例の二酸化珪素被膜の製造装置
の装置構成を示す説明図であり、図中白い矢印は処理液
の処理液調整槽への回収ラインを示す。
FIG. 2 is an explanatory diagram showing a device configuration of a silicon dioxide film manufacturing apparatus according to an embodiment of the present invention, in which a white arrow indicates a recovery line of a processing liquid to a processing liquid adjusting tank.

【図3】本発明の一実施例の二酸化珪素被膜の製造装置
の装置構成を示す説明図であり、図中白い矢印は処理液
の処理液調整槽循環ラインを示す。
FIG. 3 is an explanatory diagram showing a device configuration of a silicon dioxide film manufacturing apparatus according to an embodiment of the present invention, in which a white arrow indicates a processing solution adjusting tank circulation line of a processing solution.

【図4】本発明の一実施例の二酸化珪素被膜の製造装置
の装置構成を示す説明図であり、図中黒い矢印は洗浄液
の循環ラインを示す。
FIG. 4 is an explanatory diagram showing a device configuration of a device for manufacturing a silicon dioxide film according to an embodiment of the present invention, in which a black arrow indicates a circulation line of a cleaning liquid.

【図5】本発明の一実施例の二酸化珪素被膜の製造装置
の装置構成を示す説明図であり、図中黒い矢印は洗浄液
の回収ラインを示す。
FIG. 5 is an explanatory diagram showing a device configuration of a device for manufacturing a silicon dioxide film according to an embodiment of the present invention, in which a black arrow indicates a cleaning liquid recovery line.

【図6】本発明の一実施例の二酸化珪素被膜の製造装置
の装置構成を示す説明図であり、図中矢印は純水の水洗
ラインを示す。
FIG. 6 is an explanatory diagram showing a device configuration of a silicon dioxide film manufacturing apparatus of an embodiment of the present invention, in which an arrow indicates a pure water washing line.

【図7】本発明の一実施例の二酸化珪素被膜の製造装置
の装置構成を示す説明図であり、図中矢印は純水の排水
を示す。
FIG. 7 is an explanatory diagram showing a device configuration of a silicon dioxide coating manufacturing device according to an embodiment of the present invention, and an arrow in the drawing indicates drainage of pure water.

【図8】従来の二酸化珪素被膜の製造装置の装置構成を
示す説明図。
FIG. 8 is an explanatory view showing a device configuration of a conventional device for manufacturing a silicon dioxide film.

【符号の説明】[Explanation of symbols]

1 処理槽 2 処理液 3 被処理基板 4 処理液調整槽 8 主循環路 11 処理液循環ライン 12 処理液回収ライン 13 洗浄液回収ライン 14 洗浄液供給ライン DESCRIPTION OF SYMBOLS 1 treatment tank 2 treatment liquid 3 substrate to be treated 4 treatment liquid adjusting tank 8 main circulation path 11 treatment liquid circulation line 12 treatment liquid recovery line 13 cleaning liquid recovery line 14 cleaning liquid supply line

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 二酸化珪素の過飽和状態となった珪弗化
水素酸溶液を含む処理液と、該処理液を被処理基板と接
触させて該基板表面に二酸化珪素被膜を析出させる処理
槽と、前記処理液の二酸化珪素の過飽和状態を維持する
ために活性材を溶解させる処理液調整槽と、前記処理液
を前記処理槽と前記処理液調整槽に循環させる循環手段
と、該処理液の循環路に配置された濾過手段とを備えた
二酸化珪素被膜の製造装置において、 前記処理槽内の処理液を前記処理液調整槽に回収する手
段と、洗浄液貯留槽と前記処理槽間に洗浄液を循環させ
あるいは前記処理槽に洗浄液を注入させ処理槽を洗浄す
る手段と、前記処理液調整槽に回収された処理液を循環
させ状態を維持する手段と、前記処理槽に循環する洗浄
液を前記洗浄液貯留槽に回収するあるいは洗浄後回収せ
ずに排出する手段とを備えたことを特徴とする二酸化珪
素被膜の製造装置。
1. A treatment liquid containing a hydrosilicofluoric acid solution in which silicon dioxide is supersaturated, and a treatment tank for bringing the treatment liquid into contact with a substrate to be treated to deposit a silicon dioxide film on the surface of the substrate. A treatment liquid adjusting tank for dissolving an active material in order to maintain a supersaturated state of silicon dioxide in the treatment liquid, a circulation means for circulating the treatment liquid between the treatment tank and the treatment liquid adjusting tank, and circulation of the treatment liquid A device for producing a silicon dioxide film, comprising: a filtering means arranged in a path; a means for collecting the treatment liquid in the treatment tank into the treatment liquid adjusting tank; and a cleaning liquid circulating between the washing liquid storage tank and the treatment tank. Or a means for injecting a cleaning liquid into the processing tank to clean the processing tank, a means for circulating the processing liquid recovered in the processing liquid adjusting tank to maintain a state, and a cleaning liquid circulating in the processing tank for storing the cleaning liquid. Collect in the tank There is apparatus for manufacturing a silicon dioxide coating, characterized in that a means for discharging without recovery after washing.
JP25235393A 1993-09-14 1993-09-14 Silicon dioxide coating film producing device Pending JPH0781926A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25235393A JPH0781926A (en) 1993-09-14 1993-09-14 Silicon dioxide coating film producing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25235393A JPH0781926A (en) 1993-09-14 1993-09-14 Silicon dioxide coating film producing device

Publications (1)

Publication Number Publication Date
JPH0781926A true JPH0781926A (en) 1995-03-28

Family

ID=17236114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25235393A Pending JPH0781926A (en) 1993-09-14 1993-09-14 Silicon dioxide coating film producing device

Country Status (1)

Country Link
JP (1) JPH0781926A (en)

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