JPH0778934A - Semiconductor device and its manufacture - Google Patents

Abstract

PURPOSE:To improve the mounting efficiency and packing density of a semiconductor device and, at the same time, to simplify the manufacturing process of the semiconductor device. CONSTITUTION:A semiconductor device is provided with multiple semiconductor elements 1, laminated at intervals, wiring boards 2 provided along the lateral side faces of the elements l, electrodes provided on the surface of each element 1, and needle-shaped terminals 3 projected from the substrates 2 and connected to the electrodes 4.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a plurality of semiconductor elements are three-dimensionally stacked and a manufacturing method thereof.

[0002]

2. Description of the Related Art In recent years, a multi-chip module (MCM) in which a plurality of semiconductor elements are mounted on one wiring board to form one functional block has improved system performance (high-speed operation, high-function operation). , Has been actively developed as an effective means for promoting miniaturization and weight reduction. In particular, a mounting structure in which semiconductor elements are three-dimensionally stacked in order to reduce the size of the device has been developed by, for example, Thomson (91,92 Proceedings of symposi).
um on ISHM) In this technology, bare chips or TSOP packages are once connected to a tape carrier by wire bonds, these are stacked and the whole is resin-molded, and interconnection is performed outside the mold.

A method has also been developed in which semiconductor elements such as a memory are connected to a tape carrier by the TAB technique, the tape carriers are stacked at appropriate intervals, and external leads are formed and connected on a board.

[0004]

However, the conventional mounting method using a tape carrier requires a considerable mounting area with respect to the chip size, so that the mounting efficiency is poor and the mounting is performed by stacking three-dimensionally. There is a problem that the increase in density is limited. Further, since the manufacturing process becomes complicated, there is a problem that the material cost and the manufacturing cost also increase.

An object of the present invention is to provide a semiconductor device and a method of manufacturing the same which can improve the mounting efficiency and the mounting density and can simplify the manufacturing process.

[0006]

A semiconductor device according to the present invention comprises a plurality of semiconductor elements stacked at intervals.
A wiring board provided along the side end faces of each of these semiconductor elements, an electrode provided on the surface of each semiconductor element, and a needle terminal protruding from the wiring board and connected to the electrode.

The electrodes are composed of electrode groups arranged side by side on the edge of the surface of the semiconductor element, and needle-like terminal groups may be provided on the wiring board so as to correspond to these electrode groups. Each needle terminal is connected to an interconnection pattern formed between the semiconductor elements formed on the outer surface of the wiring board, and is provided so as to penetrate the wiring board. Further, the electrodes and the needle terminals may be connected by solder bumps.

Further, an elastic insulating film may be formed on the back surface of the semiconductor element. According to the method of manufacturing a semiconductor device of the present invention, a plurality of semiconductor elements each having an electrode on the surface thereof are laminated at a predetermined interval, and a wiring board having a needle-shaped terminal corresponding to each electrode is projected from each semiconductor element. The wiring board is provided along the side end face, the wiring board is positioned so that the needle terminals overlap the corresponding electrodes, and the needle terminals are connected to the electrodes by applying pressure from above and below the stacked semiconductor elements.

[0009]

According to the semiconductor device and the method of manufacturing the same of the present invention, since the mounting structure is formed by stacking a plurality of semiconductor elements, the mounting density can be significantly increased. Moreover, since interconnection between the semiconductor elements is performed by the wiring board arranged on the side end face, wiring with extremely high mounting efficiency can be performed. Further, since the connection with the electrode of the semiconductor element is made by contact with the needle-like terminal formed on the wiring board or by solder bump, the connection can be made relatively easily and the manufacturing process can be simplified.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention is shown in FIGS.
Will be described in detail. FIG. 1 is a sectional view showing the structure of a semiconductor device according to this embodiment. As shown in the figure, a plurality of semiconductor elements 1 are stacked in parallel with each other with a space therebetween. At this time, the wiring board 2 made of an insulating resin such as polyimide is arranged perpendicularly to the semiconductor element 1 on the side end surface of the semiconductor element 1. The wiring board 2 has needle-like terminals 3 made of a predetermined material such as W (tungsten) for electrical connection with a plurality of electrodes 4 arranged in parallel on the side edges of the surface of the semiconductor element 1. Are formed in advance at predetermined intervals according to the pitch of the electrodes 4 of the semiconductor element.
The needle terminal 3 projects from the outer surface (main surface side) of the wiring board 2 to the inner surface (other surface side) (for example, a length of 100 to 200 μm).
m, diameter about 20 μm).

The needle terminals 3 are formed in a matrix of m × n corresponding to the number of electrode groups 4 (for example, m) of the semiconductor element 1 and the number of semiconductor element rows to be stacked (for example, n). ing. The details of the electrical connection between the needle-shaped terminal 3 and the electrode 4 are shown in FIG. On the back surface of the semiconductor element 1, an elastic insulating film 8 having an appropriate elasticity is uniformly formed in advance with a predetermined film thickness. Next, the wiring board 2 is moved inward (toward the semiconductor element 1) while aligning the needle terminals 3 and the electrodes 4. Then, after the alignment is completed, the semiconductor element 1
Apply an appropriate load from above and below the entire module so that it is sandwiched from the top and bottom of the module. By doing so, the needle-shaped terminal groups 3 in a plurality of rows and the electrode groups 4 of the semiconductor elements 1 in a plurality of rows are collectively brought into pressure contact with each other. At this time,
Due to the elastic insulating film 8, the needle-shaped terminal 3 is pressed against the electrode 4 with an appropriate contact pressure, and is electrically insulated from the adjacent electrode 4.

As shown in FIG. 3, an interconnection pattern 6 between the semiconductor elements 1 and a module electrode 7 for connecting the module and the outside are formed on the wiring board 2. The m groups × n rows of needle-shaped terminal groups 3 formed in a matrix are connected to the mutual wiring pattern 6 according to the specifications of the wiring in the module. According to the semiconductor device having such a configuration and the method for manufacturing the same, since the plurality of semiconductor elements 1 can be three-dimensionally stacked and mounted, the mounting density can be significantly increased.

Further, since interconnection between the semiconductor elements 1 is performed by the interconnection pattern 6 formed on the interconnection substrate 2 arranged on the side end face, interconnection with very high mounting efficiency is possible. Moreover, since interconnection and contact between the semiconductor elements 1 are performed only by the wiring board 2, the cost of the mounting member can be reduced. Furthermore, since the connection with the electrode 4 of the semiconductor element 1 is made by contact with the needle-like terminal 3 formed on the wiring board 2, a high-density connection is possible, and the connection can be made relatively easily. The manufacturing process can be simplified.

Therefore, it is very effective when, for example, a large capacity memory module is constructed. That is,
Since it has a structure in which semiconductor elements are directly three-dimensionally stacked without interposing a carrier or the like, a module composed of a large number of semiconductor elements, for example, a large-capacity memory module, can be used without reducing the mounting density, and It can be made thinner than the laminated structure of the packaged product.
It is also a very effective manufacturing method for realizing a functional module using an ASIC such as a gate array whose external size is defined in advance.

The material of the wiring board 2 is not limited to a film such as polyimide, but may be a laminated board made of, for example, ceramics or other organic materials. Another embodiment of the present invention will be described in detail with reference to FIGS. 4, 5 and 6. That is, this embodiment is characterized in that the electrical connection between the needle-shaped terminal 3 and the electrode 4 is performed via a solder bump or the like. In this case, the solder bumps 5 are previously formed on the electrode group 4 of the semiconductor element 1 by a known method,
The atmosphere temperature is adjusted so that the solder is softened to a predetermined hardness while maintaining the space between the semiconductor elements 1 with an appropriate spacer (not shown). Then, in this embodiment, the wiring board 2 is moved from the right direction toward the semiconductor element 1.

The needle terminal group 3 formed on the wiring board 2 is
The atmosphere temperature is lowered while penetrating the softened solder bumps 5 on the electrode group 4. With this, simultaneously with the electrical connection between the semiconductor element 1 and the wiring board 2, the plurality of semiconductor elements 1 and the wiring board 2 can be fixed to each other. Also in the semiconductor device having such a structure and the method for manufacturing the same, the same effect as that of the first embodiment can be obtained.

[0017]

According to the semiconductor device and the method of manufacturing the same of the present invention, since the mounting structure has a plurality of semiconductor elements stacked in parallel, the mounting density can be greatly increased.
Moreover, since interconnection between the semiconductor elements is performed by the wiring board arranged on the side end face, wiring with extremely high mounting efficiency can be performed. Furthermore, since the connection with the electrodes of the semiconductor element is made by contact with the needle terminals formed on the wiring board or by solder bumps, the connection can be made relatively easily and the manufacturing process can be simplified. is there.

[Brief description of drawings]

FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a partial cross-sectional view showing a semiconductor device according to an embodiment of the present invention.

FIG. 3 is a perspective view showing a semiconductor device according to an embodiment of the present invention.

FIG. 4 is a sectional view showing a semiconductor device according to another embodiment of the present invention.

FIG. 5 is a partial cross-sectional view showing a semiconductor device according to another embodiment of the present invention.

FIG. 6 is a partial plan view showing a semiconductor device according to another embodiment of the present invention.

[Explanation of symbols]

 1 semiconductor element 2 wiring board 3 needle terminal 4 electrode 5 solder bump 6 mutual wiring pattern 8 elastic insulating film

Claims (6)

[Claims] 1. A plurality of semiconductor elements stacked at intervals, a wiring board provided along side end faces of each of these semiconductor elements, and an electrode provided on the surface of each of the semiconductor elements.
A semiconductor device, comprising: a needle-shaped terminal projecting from the wiring board and connected to the electrode. 2. The electrode comprises a group of electrodes arranged side by side on the edge of the surface of the semiconductor element, and a group of needle-like terminals corresponding to the group of electrodes is provided on the wiring board so as to project therefrom. Semiconductor device. 3. An interconnection pattern for connecting semiconductor elements is formed on an outer surface of a wiring board, and needle terminals are provided so as to connect to the interconnection pattern and penetrate the wiring board. Item 1. The semiconductor device according to item 1. 4. The semiconductor device according to claim 1, wherein the electrode and the needle terminal are connected by a solder bump. 5. The semiconductor device according to claim 1, wherein an elastic insulating film is formed on the back surface of the semiconductor element. 6. A wiring board, on which a plurality of semiconductor elements each having an electrode on the surface thereof are stacked at a predetermined interval, and needle terminals corresponding to the respective electrodes are projected, is provided on a side end surface of each of the semiconductor elements. Manufacturing of a semiconductor device which is provided along with the needle-shaped terminals, positions the wiring board so as to overlap the corresponding electrodes, and pressurizes the stacked semiconductor elements from above and below to connect the needle-shaped terminals to the electrodes. Method.