JPH0778689A - Thin-film electroluminescence element - Google Patents
Thin-film electroluminescence elementInfo
- Publication number
- JPH0778689A JPH0778689A JP5222682A JP22268293A JPH0778689A JP H0778689 A JPH0778689 A JP H0778689A JP 5222682 A JP5222682 A JP 5222682A JP 22268293 A JP22268293 A JP 22268293A JP H0778689 A JPH0778689 A JP H0778689A
- Authority
- JP
- Japan
- Prior art keywords
- light
- layer
- thin film
- light emitting
- emitting layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 238000005401 electroluminescence Methods 0.000 title claims description 4
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000010408 film Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims description 9
- 239000005083 Zinc sulfide Substances 0.000 claims 1
- ZEGFMFQPWDMMEP-UHFFFAOYSA-N strontium;sulfide Chemical group [S-2].[Sr+2] ZEGFMFQPWDMMEP-UHFFFAOYSA-N 0.000 claims 1
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical group [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims 1
- 238000000295 emission spectrum Methods 0.000 abstract description 7
- 238000001228 spectrum Methods 0.000 abstract description 3
- 238000000926 separation method Methods 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 description 6
- 230000003595 spectral effect Effects 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- -1 Si3NFour Inorganic materials 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、交流電界の印加によっ
てエレクトロルミネセンス (以下ＥＬと略す) 発光を呈
する薄膜ＥＬ素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film EL element which exhibits electroluminescence (hereinafter abbreviated as EL) light emission when an alternating electric field is applied.
【０００２】[0002]
【従来の技術】従来より電場発光螢光体を用いた固体映
像装置としてＸ−Ｙマトリックス表示装置が知られてい
る。この装置は、電場発光層の両面に水平平行電極群と
垂直電極群とを互いに直行するように配置し、それぞれ
の電極群に接続された給電線により切替え装置を通して
信号を加えて、両電極の交点部分の電場発光層 (ＥＬ発
光層) を発光させ、発光した交点部分のいわゆる絵素の
組合わせによって文字信号、図形を表示させるものであ
る。2. Description of the Related Art An XY matrix display device has been conventionally known as a solid-state image device using an electroluminescent phosphor. In this device, horizontal parallel electrode groups and vertical electrode groups are arranged on both sides of an electroluminescent layer so as to be orthogonal to each other, and a signal is applied through a switching device by a power supply line connected to each electrode group, and both electrodes are connected. The electroluminescent layer (EL emitting layer) at the intersection is made to emit light, and a character signal and a graphic are displayed by a combination of so-called picture elements at the emitted intersection.
【０００３】ここで用いられる固体映像表示装置の表示
板としては、通常、図３に示すように透光性基板１上に
平行な下部透明電極群２を形成し、その上に第一絶縁層
３、ＥＬ発光層４、第二絶縁層５を順次積層し、さらに
その上に背面平行電極群６を図４に示すように下部透明
電極群２と絵素７で直交する配置で積層して形成する。
透光性基板１の材料には、ソーダガラス、ほうけい酸ガ
ラス、バリウムほうけい酸ガラスの一つを用い、その基
板上にSnＯ2 あるいはＩＴＯ (In2 Ｏ3 ＋SnＯ 2 ) のよ
うな透明導電材料を、電子ビーム (ＥＢ) 蒸着法、スパ
ッタリング法により150 〜400nm の間の厚さで形成して
透明電極２とする。第一、第二絶縁層３、５の材料に
は、Ｙ2 Ｏ3 、SiＯ2 、Si3 Ｎ4 、Al2 Ｏ3 、Ta
2 Ｏ5 、SiＯＮ、SiAlＯＮ等より一種ないし二種を選
び、１層ないし２層を厚さ200 〜400nm の間でＥＢ蒸着
法、スパッタリング法で形成する。ＥＬ発光層４は、Zn
Ｓを母体とし、添加物としてMn、Tb、Eu、Sm、Tma を加
え、あるいはSrＳを母体とし、添加物としてCe等を加
え、ＥＢ蒸着法、原子層結晶成長 (ＡＬＥ) 法、スパッ
タリング法、有機金属ＣＶＤ法などにより、400 〜900n
m の厚さに形成する。背面電極６は、Alなどの金属材料
によりＥＢ蒸着法あるいはスパッタリング法で１層ない
し２層、合計厚さ300 〜1000nmに形成する。Display of solid-state image display device used here
As a plate, usually, as shown in FIG.
The lower transparent electrode group 2 is formed in parallel and the first insulating layer is formed on the lower transparent electrode group 2.
3, EL light emitting layer 4, second insulating layer 5 are sequentially stacked,
The rear parallel electrode group 6 is transparent on the bottom as shown in FIG.
The electrode group 2 and the picture element 7 are formed by stacking them in a perpendicular arrangement.
The transparent substrate 1 is made of soda glass or borosilicate gas.
Use one of lath and barium borosilicate glass
SnO on the board2Or ITO (In2O3＋ SnO 2)
Such a transparent conductive material is formed by electron beam (EB) vapor deposition, spa
It is formed with a thickness of between 150 and 400 nm by the Tattering method.
The transparent electrode 2 is used. For the materials of the first and second insulating layers 3 and 5
Is Y2O3, SiO2, Si3NFour, Al2O3, Ta
2OFiveSelect one or two types from SiON, SiON, SiAlON, etc.
And EB deposition of one or two layers with a thickness of 200-400 nm
Method, sputtering method. The EL emission layer 4 is Zn
With S as a matrix, Mn, Tb, Eu, Sm, and Tma are added as additives.
Or, SrS is used as a base material and Ce or the like is added as an additive.
E, EB evaporation method, atomic layer crystal growth (ALE) method, sputtering
400-900n by the tarring method, metalorganic CVD method, etc.
Form to a thickness of m. The back electrode 6 is made of a metal material such as Al.
By EB evaporation method or sputtering method
Then, two layers are formed to a total thickness of 300 to 1000 nm.
【０００４】[0004]
【発明が解決しようとする課題】薄膜ＥＬ素子の発光閾
値電圧は、第一絶縁層、第二絶縁層の各膜厚と誘電率で
決まる。発光輝度は、発光層母材に添加した励起源の添
加物濃度が最適値であるとき、発光母材の膜質等によ
り、また、絶縁層の材料特性により影響されて、その発
光輝度が概略決まる。このような、一般的なＥＬ素子に
おいて、高輝度化はかねてよりの課題である。また、最
近、カラー薄膜ＥＬ素子の開発が急速に進展しつつあ
る。しかし現状は、赤色発光、緑色発光、青色発光等
は、実用的な輝度に達していない。The light emission threshold voltage of the thin film EL element is determined by the film thickness and dielectric constant of the first insulating layer and the second insulating layer. The emission brightness is roughly determined when the additive concentration of the excitation source added to the light emitting layer base material has an optimum value and is influenced by the film quality of the light emitting base material and the material properties of the insulating layer. . In such a general EL element, high brightness has been a problem for some time. Further, recently, the development of color thin film EL elements has been rapidly progressing. However, at present, red light emission, green light emission, blue light emission, etc. have not reached a practical brightness.
【０００５】本発明の目的は、このような現状に鑑み、
輝度を向上させた薄膜ＥＬ素子を提供することにある。In view of such a current situation, an object of the present invention is to
It is to provide a thin film EL element with improved brightness.
【０００６】[0006]
【課題を解決するための手段】上記の目的を達成するた
めに、本発明は、絶縁性基板上で発光層の両面にそれぞ
れ絶縁層を介して基板側が透光性である条状電極を備え
た薄膜ＥＬ素子において、発光層で発生する光の発光ピ
ーク波長と、発光層で発生する光が積層された各層を通
過することによって干渉して生ずる干渉ピーク波長とが
一致しているものとする。発光ピーク波長と干渉ピーク
波長とが、各層の材料、屈折率に対応して各層の膜厚を
調整することにより一致させられたことが良い。発光層
の材料がZnＳを母体としたこと、あるいはSrＳを母体と
したことが有効である。In order to achieve the above-mentioned object, the present invention comprises a strip-shaped electrode on the insulating substrate on both sides of which the light-emitting layer is transparent and the substrate side is transparent through the insulating layers. In the thin-film EL device, the emission peak wavelength of the light generated in the light emitting layer and the interference peak wavelength generated by the interference of the light generated in the light emitting layer by passing through each layer in which the light emitting layers are stacked are the same. . It is preferable that the emission peak wavelength and the interference peak wavelength be matched by adjusting the film thickness of each layer according to the material and refractive index of each layer. It is effective that the material of the light emitting layer is ZnS as a base material or SrS as a base material.
【０００７】[0007]
【作用】薄膜ＥＬ素子の積層膜の各膜厚を適当に設定し
て発光させると、膜厚と各層の屈折率によって多層薄膜
の干渉が発生する。これを、図３を用いて詳細に説明す
ると、発光層で発生した光は、一部は、第一絶縁層３、
下部透明電極２および基板１を通って出射され、透過光
10となる。一方、背面側に出た光は、第二絶縁層を通
り、背面電極６で反射して、第二絶縁層５、発光層４、
第一絶縁層３、下部透明電極２、透明基板１を通して出
射され、反射光20となる。When the respective film thicknesses of the laminated film of the thin film EL element are appropriately set to emit light, interference of the multilayer thin films occurs due to the film thickness and the refractive index of each layer. This will be described in detail with reference to FIG. 3. The light generated in the light emitting layer is partly composed of the first insulating layer 3,
The transmitted light is emitted through the lower transparent electrode 2 and the substrate 1.
Will be 10. On the other hand, the light emitted to the back side passes through the second insulating layer and is reflected by the back electrode 6, and the second insulating layer 5, the light emitting layer 4,
The reflected light 20 is emitted through the first insulating layer 3, the lower transparent electrode 2, and the transparent substrate 1.
【０００８】この構成の薄膜ＥＬ素子の各構成材料とし
て、絶縁層は、誘電率、絶縁耐圧、tan δの良い特性が
要求され、ＥＬ発光層は、実用的な所望の発光輝度が得
られる特性が要求される。このため絶縁性、誘電性、Ｅ
Ｌ発光特性よりさまざまな材料が使用あるいは開発され
ている。このような構成材を用いた時、多層薄膜のため
多重干渉が発生し、その干渉ピークと干渉の谷の差は、
例えば透過光10では、10〜15％透過率となる。一方、反
射光20の場合も同様となるため、全体での干渉特性は20
〜30％となる。このため、薄膜ＥＬ素子の各膜厚値が、
干渉ピークとなるように設定されていると、輝度が20〜
30％増加し、一方、多重干渉の谷となるよう設定されて
いると輝度が20〜30％減少することとなる。As each constituent material of the thin film EL device having this structure, the insulating layer is required to have good characteristics of dielectric constant, withstand voltage, and tan δ, and the EL light emitting layer has characteristics of obtaining practically desired emission brightness. Is required. Therefore, insulation, dielectric properties, E
Various materials have been used or developed based on the L emission characteristics. When such a component is used, multiple interference occurs due to the multilayer thin film, and the difference between the interference peak and the valley of the interference is
For example, transmitted light 10 has a transmittance of 10 to 15%. On the other hand, the same applies to the case of reflected light 20, so the overall interference characteristic is 20
It will be ~ 30%. Therefore, each film thickness value of the thin film EL element is
If the interference peak is set, the brightness will increase from 20 to
It is increased by 30%, while the brightness is reduced by 20 to 30% when it is set to the valley of multiple interference.
【０００９】ZnＳ：Mn螢光体を例にして説明すると、発
光範囲が550nm 〜640nm で、発光ピークが585nm ないし
580nm である。ＥＬ素子の膜厚のばらつきが大きい場
合、干渉効果の山と谷が両方出現する。この場合、干渉
効果の山と谷の両方が作用し、発光分光スペクトルに影
響がでる。これによって、低波長の緑が０〜30％強く出
たり、あるいは長波長側の赤が０〜30％強く出たりする
と、肉眼では、ＥＬ素子面内で色むらとして見える。こ
れを防ぐのには、発光ピーク波長で薄膜多重干渉ピーク
となるように、各層の材料、屈折率に対応して最適膜厚
を設定すればよく、それによって高輝度が得られる。A ZnS: Mn phosphor will be described as an example. The emission range is 550 nm to 640 nm, and the emission peak is 585 nm to 585 nm.
It is 580 nm. When the variation in the film thickness of the EL element is large, both peaks and troughs of the interference effect appear. In this case, both peaks and troughs of the interference effect act and affect the emission spectrum. As a result, if the low-wavelength green is strongly emitted by 0 to 30% or the long-wavelength red is emitted by 0 to 30%, it appears as uneven color on the surface of the EL element with the naked eye. In order to prevent this, the optimum film thickness may be set in accordance with the material of each layer and the refractive index so that the thin film multiple interference peak is obtained at the emission peak wavelength, whereby high brightness can be obtained.
【００１０】[0010]
【実施例】図５は本発明の一実施例の薄膜ＥＬ素子を示
し、透明基板１の材料としてバリウムほうけい酸ガラス
を用い、透明電極２の材料としてＩＴＯを用いた。第一
絶縁層３、第二絶縁層５には、それぞれ30nmの厚さのSi
Ｏ2 膜、180 〜200nm の厚さのSi3 Ｎ4 膜を積層して用
い、発光層４には、ZnＳ：MnをＥＢ蒸着法で形成したも
のを用い、背面電極６にはAl膜を用いた。発光層の膜厚
を400 〜800nm の範囲で２種類選定した。図２は、分光
透光率を示し、ＥＬ発光層４、第一絶縁層３、透明電極
２による透過光10の干渉効果により干渉ピークと干渉の
谷ができているが、実線21の場合は、ZnＳ：Mnの発光ピ
ーク波長585nm に対し、透過率の干渉ピークが一致して
いるのに対し、点線22の場合は、透過率が干渉の谷と発
光ピーク波長が重なっている。この結果からＥＬ発光の
透過光10の強度が最大10〜15％違ってくる。同様にＥＬ
発光の背面電極から反射した光、反射光20もあるため、
全体としては、20〜30％の光の強度が変わることにな
る。EXAMPLE FIG. 5 shows a thin film EL device according to an example of the present invention. Barium borosilicate glass was used as the material of the transparent substrate 1 and ITO was used as the material of the transparent electrode 2. The first insulating layer 3 and the second insulating layer 5 each have a Si thickness of 30 nm.
An O 2 film and a Si 3 N 4 film having a thickness of 180 to 200 nm are laminated and used, the light emitting layer 4 is formed of ZnS: Mn by the EB vapor deposition method, and the back electrode 6 is an Al film. Using. Two kinds of film thickness of the light emitting layer were selected in the range of 400 to 800 nm. FIG. 2 shows the spectral transmittance, and an interference peak and a valley are formed due to the interference effect of the transmitted light 10 by the EL light emitting layer 4, the first insulating layer 3, and the transparent electrode 2, but in the case of the solid line 21 , ZnS: Mn emission peak wavelength is 585 nm, the interference peak of transmittance coincides, whereas in the case of dotted line 22, the valley of interference of transmission and emission peak wavelength overlap. From this result, the intensity of the transmitted light 10 of EL emission differs by a maximum of 10 to 15%. Similarly EL
There is also light reflected from the back electrode of the light emission, reflected light 20,
Overall, 20-30% of the light intensity will change.
【００１１】図１は、図２の分光透過率曲線21が得られ
た発光層４の膜厚750 〜800nm のＥＬ素子と分光透過率
曲線22が得られたＥＬ素子との駆動電圧180 Ｖ以下での
発光分光スペクトルをそれぞれ線11、12で示し、線11で
は多層薄膜干渉ピークと発光ピークが、一致した時の発
光分光スペクトルが得られている。このスペクトルは、
緑色や赤色の波長は強く出ていないため、黄橙色であ
る。しかし、線12では、多層薄膜の干渉の谷と発光ピー
クが一致しているため、この発光分光スペクトルは、緑
色と赤色の波長が強く出て、ZnＳ：Mnの585nm ピーク強
度が少し低く出ている。このため、多少黄橙色からはず
れている。FIG. 1 shows a driving voltage of 180 V or less for an EL element having a film thickness of 750 to 800 nm of the light emitting layer 4 having the spectral transmittance curve 21 shown in FIG. 2 and an EL element having the spectral transmittance curve 22. Lines 11 and 12 respectively show the emission spectrums in the above, and in the line 11, the emission spectrums when the multilayer thin film interference peak and the emission peak coincide with each other are obtained. This spectrum is
Since the wavelengths of green and red are not strong, they are yellow-orange. However, in line 12, the emission valleys of the multilayer thin film coincide with the emission peaks, so the emission spectrum shows strong green and red wavelengths, and the 585 nm peak intensity of ZnS: Mn is slightly lower. There is. For this reason, it is slightly deviated from yellow-orange.
【００１２】本発明は、薄膜ＥＬ素子として記載した
が、実用的には、ＥＬ素子が外気の温度の影響を受ける
ため、ＥＬ素子自体を外気遮断のため封止構造を取るこ
とは言うまでもない。Although the present invention has been described as a thin film EL element, it is needless to say that the EL element itself has a sealing structure for shutting off the outside air in practice because the EL element is affected by the temperature of the outside air.
【００１３】[0013]
【発明の効果】本発明によれば、発光層の発光スペクト
ルのピークと多層薄膜の干渉効果によって生ずる分光ス
ペクトルのピークを一致させるように、各層の材料、屈
折率に応じて各層の膜厚を最適化することにより、発光
輝度を従来よりも20〜30％向上させ、発光分光スペクト
ルによる色むらを抑えた薄膜ＥＬ素子を得ることができ
る。According to the present invention, the film thickness of each layer is adjusted according to the material of each layer and the refractive index so that the peak of the emission spectrum of the light emitting layer and the peak of the spectral spectrum generated by the interference effect of the multilayer thin film may coincide with each other. By optimizing, the emission luminance can be improved by 20 to 30% as compared with the conventional one, and a thin film EL element in which color unevenness due to an emission spectrum is suppressed can be obtained.
【図１】本発明の一実施例および比較例の薄膜ＥＬ素子
の発光分光スペクトル線図FIG. 1 is an emission spectral line diagram of a thin film EL element according to an example of the present invention and a comparative example.
【図２】本発明の一実施例および比較例の薄膜ＥＬ素子
の分光透過率線図FIG. 2 is a spectral transmittance diagram of thin film EL elements of one example and a comparative example of the present invention.
【図３】薄膜ＥＬ素子の構造および光の通路を示す断面
図FIG. 3 is a cross-sectional view showing a structure of a thin film EL element and a light passage.
【図４】薄膜ＥＬ素子の電極配置を示す平面図FIG. 4 is a plan view showing an electrode arrangement of a thin film EL element.
【図５】本発明の一実施例の薄膜ＥＬ素子の断面図FIG. 5 is a sectional view of a thin film EL element according to an embodiment of the present invention.
１ 透光性基板 ２ 透明電極 ３ 第一絶縁層 ４ 発光層 ５ 第二絶縁層 ６ 背面電極 ７ 絵素 1 Translucent Substrate 2 Transparent Electrode 3 First Insulating Layer 4 Light Emitting Layer 5 Second Insulating Layer 6 Back Electrode 7 Picture Element
───────────────────────────────────────────────────── フロントページの続き (72)発明者 柴田 一喜 神奈川県川崎市川崎区田辺新田１番１号 富士電機株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazuki Shibata 1-1 Tanabe Nitta, Kawasaki-ku, Kawasaki-shi, Kanagawa Fuji Electric Co., Ltd.
Claims (4)
縁層を介して基板側が透光性である条状電極を備えた薄
膜エレクトロルミネセンス素子において、発光層で発生
する光の発光ピーク波長と、発光層で発生する光が積層
された各層を通過することによって干渉して生ずる干渉
ピーク波長とが一致していることを特徴とする薄膜エレ
クトロルミネセンス素子。1. A light emitting peak of light generated in a light emitting layer in a thin film electroluminescent device comprising a strip-shaped electrode having a light-transmitting substrate on both sides of the light emitting layer via an insulating layer on the insulating substrate. A thin film electroluminescent device, wherein the wavelength and the interference peak wavelength generated by the interference of the light generated in the light emitting layer passing through each of the laminated layers coincide with each other.
層の材料、屈折率に対応して各層の膜厚を調整すること
により一致させられた請求項１記載の薄膜エレクトロル
ミネセンス素子。2. The thin film electroluminescence device according to claim 1, wherein the emission peak wavelength and the interference peak wavelength are matched by adjusting the film thickness of each layer in accordance with the material and refractive index of each layer.
項１あるいは２記載の薄膜エレクトロルミネセンス素
子。3. The thin film electroluminescent device according to claim 1, wherein the material of the light emitting layer is zinc sulfide as a base material.
とした請求項１あるいは２記載の薄膜エレクトロルミネ
センス素子。4. The thin film electroluminescence device according to claim 1, wherein the material of the light emitting layer is strontium sulfide as a base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5222682A JPH0778689A (en) | 1993-09-08 | 1993-09-08 | Thin-film electroluminescence element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5222682A JPH0778689A (en) | 1993-09-08 | 1993-09-08 | Thin-film electroluminescence element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0778689A true JPH0778689A (en) | 1995-03-20 |
Family
ID=16786273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5222682A Pending JPH0778689A (en) | 1993-09-08 | 1993-09-08 | Thin-film electroluminescence element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0778689A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000060905A1 (en) * | 1999-04-05 | 2000-10-12 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence device and its manufacturing method |
| KR100809931B1 (en) * | 2001-06-30 | 2008-03-06 | 엘지.필립스 엘시디 주식회사 | Organic Electroluminescence Display and Fabricating Method Thereof |
| US8063558B2 (en) | 2005-06-30 | 2011-11-22 | Canon Kabushiki Kaisha | Multi-color display apparatus |
-
1993
- 1993-09-08 JP JP5222682A patent/JPH0778689A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000060905A1 (en) * | 1999-04-05 | 2000-10-12 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence device and its manufacturing method |
| US6469438B2 (en) | 1999-04-05 | 2002-10-22 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence device with prescribed optical path length |
| US6844210B2 (en) | 1999-04-05 | 2005-01-18 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence device and method of manufacturing same |
| EP2262032A2 (en) | 1999-04-05 | 2010-12-15 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence device and its manufacturing method |
| KR100809931B1 (en) * | 2001-06-30 | 2008-03-06 | 엘지.필립스 엘시디 주식회사 | Organic Electroluminescence Display and Fabricating Method Thereof |
| US8063558B2 (en) | 2005-06-30 | 2011-11-22 | Canon Kabushiki Kaisha | Multi-color display apparatus |
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