JPH0774513A - Dielectric resonance part - Google Patents

Abstract

PURPOSE:To obtain a dielectric resonance parts which is capable of improving yield and lowering production cost and product cost. CONSTITUTION:The dielectric block 1 and the dielectric substrate 2 of a dielectric resonance parts is composed of dielectric material. In the dielectric block 1, the formation holes 12a and 12b of an inner conductor opening at an end face 11a and an end face 11b and penetrating the inside are formed. On the upper surface, the right and left side surfaces and the end faces 11a and 11b of the dielectric block 1, an outer conductor 15a is formed. At the inside of the formation holes 12a and 12b of an inner conductor, an inner conductor 13 having an open end 13a isolating from the outer conductor 15a on the side of the end face 11a and a short end 13b shorting with the outer conductor 15a on the side of the end face 11b is formed. The dielectric substrate 2 is located on the side of a second end face 13b of a prescribed distance from the open end 13a of the inner conductor 13 and is stuck to the mounting part 16 formed on the bottom surface of the dielectric block 1.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric resonance component, and more particularly to a dielectric resonance component provided with at least one dielectric coaxial resonator.

[0002]

2. Description of the Related Art A dielectric resonance component is used as a resonator, a bandpass filter having various band characteristics, a band elimination filter, etc. in a mobile communication device such as a car phone or a mobile phone. On the other hand, mobile communication devices and the like are desired to be smaller in size for convenience of portability. Therefore, it is necessary for the dielectric component used in the mobile communication device to have excellent characteristics, be capable of surface mounting, and be capable of reducing the number of discrete components connected to the outside. Here, the dielectric resonance component is divided into a dielectric block portion and a dielectric substrate portion, and the function of the discrete component connected to the outside between the dielectric block portion and the dielectric substrate portion is If printed wiring is achieved, the number of discrete components connected to the outside can be reduced and
Can be made smaller and lighter. Further, a resonator having various characteristics, a bandpass filter having various band characteristics, a band eliminate filter, or the like can be configured only by exchanging the portion of the dielectric substrate in common with the portion of the dielectric block. Therefore, a dielectric resonant component having a structure in which a dielectric substrate is attached to the side surface of the dielectric block has been conventionally proposed.

FIG. 7 is a diagram showing the structure of the dielectric resonance component previously proposed by the applicant of the present application. Such a dielectric resonance component is disclosed in Japanese Patent Application No. 4-10009. 7, FIG. 7 (a) is a perspective view seen from diagonally above, and FIG. 7 (b) is an exploded perspective view of FIG. 7 (a).
FIG. 7C is a sectional view taken along the line AA ′ of FIG.

The dielectric resonance component is roughly composed of a dielectric block 100 and a dielectric substrate 200. The dielectric block 100 is made of a dielectric material having a predetermined relative dielectric constant. The dielectric block 100 has three inner conductor forming holes 102a, 102b, 102c.
Are formed. Inner conductor forming holes 102a, 102
b and 102c are the first end faces 1 of the dielectric block 100.
01a and the second end face 101b are open. An inner conductor 103 having a length L is formed on each inner peripheral surface of each inner conductor forming hole 102a, 102b, 102c.
An outer conductor 104a is formed on the outer peripheral surface of the dielectric block 100 except for the lower surface. Inner conductor forming holes 102a, 10
On the first end face 101a side of 2b and 102c, an insulating region 105 having a length α is provided between the inner conductor 103 and the outer conductor 104a. Therefore, each inner conductor 103 formed inside the inner conductor forming holes 102a, 102b, 102c is insulated from the outer conductor 104a on the first end face 101a side. On the other hand, on the second end face 101b side, the inner conductor 103 is short-circuited with the outer conductor 104a. An additional electrode (not shown) is provided on the lower surface of the dielectric block 100 at a position corresponding to the inner conductor 103.

On the lower surface of the dielectric block 100, a dielectric substrate 200 made of a dielectric material having a predetermined relative dielectric constant is mounted and fixed. Dielectric substrate 200
Is formed to have a length (α + L) and a width W so that the lower surface of the dielectric block 100 has substantially the same size. The outer conductor 104b is formed on the side surface and the lower surface of the dielectric substrate 200. The outer conductor 104b of the dielectric substrate 200 is the outer conductor 104a of the dielectric block 100.
Connected with. The inner conductor 103 includes the outer conductors 104a and 10a.
Together with 4b, substantially three quarter-wave dielectric coaxial resonators are constructed.

Input / output electrodes 201a and 201b are formed on the upper and lower surfaces and left and right side surfaces of the dielectric substrate 200 while being insulated from the outer conductors 104a and 104b. Further, the input / output electrodes 201a are formed on the upper surface of the dielectric substrate 200.
Additional electrode 202a connected to the input / output electrode 201b
The additional electrode 202b connected to the additional electrode 202a,
An additional electrode 202c located substantially in the center between 202b is formed. Additional electrodes 202a, 202b, 202c
Are capacitively coupled to the inner conductor 103 when the dielectric substrate 200 is attached to the dielectric block 100. A coil 203a is printed between the additional electrodes 202a and 202c, and the coil 20a is provided between the additional electrodes 202b and 202c.
3b is printed. As a result, the dielectric resonant component operates as a three-stage bandpass filter.

Similar to FIG. 7, FIG. 8 is a diagram showing the structure of a dielectric resonance component previously proposed by the applicant of the present application, which is shown in Japanese Patent Application No. 4-10009. In FIG.
FIG. 8A is an exploded perspective view seen from diagonally above, and FIG.
FIG. 9 is a sectional view taken along the line AA ′ of FIG. In the dielectric resonant component shown in FIG. 8, the dielectric block 100
Four inner conductor forming holes 102a, 102b, 102c,
102d is formed and each inner conductor forming hole 102a, 102 is formed.
b, 102c, 102d, the insulating region 105 and the inner conductor 10
3 are formed respectively. The length of the lower surface of the dielectric block 100 is {α + (L /
2)}, the stepped mounting portion 106 whose width is selected as W is formed. The dielectric substrate 200 has a length of {α +
(L / 2)}, the width of which is selected as W, and the mounting portion 10
It is formed in substantially the same shape as 6. In the dielectric resonance component of FIG. 8, the inner conductor 103 and the outer conductors 104a and 5b are
And 4 form substantially four quarter-wave dielectric coaxial resonators, and operate as a four-stage bandpass filter.

[0008]

By the way, in a dielectric resonant component having a structure in which the dielectric block 100 and the dielectric substrate 200 are bonded together, an input / output electrode is added between the dielectric block 100 and the dielectric substrate 200. Since electrodes are formed, unevenness occurs. Therefore, the dielectric block 1
00 and the dielectric substrate 200 inevitably form an air layer 300. Moreover, it is difficult to make the thicknesses of the input / output electrodes, additional electrodes, parts, resists, etc. uniform on the order of microns. Therefore, it is inevitable that the thickness d of the air layer 300 between the dielectric block 100 and the dielectric substrate 200 fluctuates in the order of microns.

When the air layer 300 is provided as described above, the effective relative permittivity ε _r between the inner conductor 103 and the outer conductor 104 of each dielectric coaxial resonator becomes smaller as the thickness d of the air layer becomes larger. (FIG. 9A). Also, the capacitance C between the inner conductor 103 and the outer conductor 104 of each dielectric coaxial resonator is
_i decreases as the thickness d of the air layer increases (FIG. 9B). Therefore, the characteristic impedance Z of each dielectric coaxial resonator increases as the thickness d of the air layer increases (FIG. 9C). On the other hand, the electric field strength between the inner conductor 103 and the outer conductor 104 is
3 is the largest at the open end 103a,
As it goes from a to the short-circuit end 103b side of the inner conductor 103, it becomes smaller in a sine curve, and becomes the minimum "0" at the short-circuit end 103b.

By the way, in the dielectric resonance component of FIG. 7, the dielectric substrate 200 is attached to the entire lower surface of the dielectric block 100. Further, in the dielectric resonant component of FIG. 8, the dielectric substrate 200 is attached to the first end surface 101a side of the dielectric block 100. As described above, in each of the dielectric resonance components shown in FIGS. 7 and 8, the dielectric substrate is attached to the lower surface of the dielectric block 100 so as to include the open end 103a of the inner conductor 103. Therefore, the dielectric resonant components shown in FIGS. 7 and 8 have various problems pointed out below.

First, each dielectric coaxial resonator of the dielectric resonant component of FIG. 7 is affected by the variation of the thickness d of the air layer over the length L, and each dielectric coaxial resonator of the dielectric resonant component of FIG. Over the length L, it is affected by the variation of the air layer thickness d. In this case, the total effective relative permittivity ε _{r of} each dielectric coaxial resonator,
The capacitance C _i and the characteristic impedance Z are greatly influenced by the variation of the thickness d of the air layer near the open end 103a where the electric field strength is strong, and vary greatly. Therefore, there is a problem that the effective relative permittivity ε _r , the capacitance C _i , and the characteristic impedance Z of each of the dielectric coaxial resonators are largely varied, and those outside the permissible range are increased, resulting in poor yield.
As a result, the productivity of the dielectric resonance component is deteriorated, and the production cost and the product cost are increased.

Further, in a dielectric resonant component provided with two or more dielectric coaxial resonators, the effective relative permittivity ε _r , the capacitance C _i , and the characteristic impedance Z of the entire dielectric coaxial resonators.
The coupling coefficient K between the dielectric coaxial resonators also largely varies due to the variation of Therefore, even in the dielectric resonant component provided with two or more dielectric coaxial resonators, as in the above-mentioned problem, the variation of the coupling coefficient K is large and many are out of the allowable range, the yield is poor, and There has been a problem that the productivity of the dielectric resonance component is deteriorated and the production cost and the product cost are soared.

An object of the present invention is to solve the above-mentioned technical problems, to provide a dielectric resonance component which can improve the yield and reduce the production cost and the product cost.

[0014]

In order to solve the above technical problems, the present invention has the following configurations. That is,
The dielectric resonance component according to claim 1 is provided with at least one dielectric coaxial resonator, is made of a dielectric material, and has first and second end faces, and the first to second end faces.
Of a dielectric block having a plurality of side surfaces extending across the end surface of the dielectric block and an inner conductor forming hole that opens at the first and second end surfaces and penetrates the inside thereof, and an outer surface formed on at least the second end surface and the side surface of the dielectric block. A conductor, an inner end formed inside the inner conductor forming hole, having an open end insulated from the outer conductor on the first end face side and a short-circuited end short-circuited to the outer conductor on the second end face side; It is characterized by comprising a dielectric substrate which is made of a body material and is located a predetermined distance from the open end of the inner conductor on the side of the second end face and which is attached to the side surface of the dielectric block.

[0015]

Since the dielectric substrate is located on the second end face side at a predetermined distance from the open end of the inner conductor and is attached to the side surface of the dielectric block, that is, the portion where the electric field strength is weak, the air layer Is the total effective relative permittivity ε _r , capacitance C _i , and characteristic impedance Z of each dielectric coaxial resonator.
Has a very small effect on. Therefore, the total effective relative permittivity ε _r , the capacitance C _{i of} each dielectric coaxial resonator,
The variation of the characteristic impedance Z is reduced, and the yield is improved. As a result, the productivity of the dielectric resonance component is improved, and the production cost and the product cost are reduced. In the case of a dielectric resonance component provided with two or more dielectric coaxial resonators, there is little variation in the total effective relative permittivity ε _r , capacitance C _i , and characteristic impedance Z of each dielectric coaxial resonator. The fluctuation of the coupling coefficient K between the coaxial resonators also becomes small. Therefore, the variation of the coupling coefficient K is reduced, the productivity of the dielectric resonance component is improved, and the production cost and the product cost are reduced.

[0016]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing the configuration of a dielectric resonant component of an embodiment of the present invention. Note that, in FIG. 1, FIG. 1A is a perspective view seen from diagonally above, and FIG. 1B is FIG. 1A.
FIG. 1C is an exploded perspective view seen from the rear obliquely below, and FIG. 1C is a cross-sectional view taken along the line AA ′ of FIG. The dielectric resonance component according to this embodiment is roughly composed of a dielectric block 1.
And a portion of the dielectric substrate 2 attached to the dielectric block 1.

The dielectric block 1 is made of a dielectric material having a predetermined relative dielectric constant. In the dielectric block 1, for example, two inner conductor forming holes 12a and 12b are formed. The inner conductor forming holes 12a and 12b penetrate the inside of the dielectric block 1 and are open at the first end surface 11a and the second end surface 11b of the dielectric block 1. The inner conductor forming holes 12a and 12b have a second
An inner conductor 13 having a length L is formed from the end surface 11b of the. An outer conductor 14a is formed on the outer peripheral surface of the dielectric block 1 except for the mounting portion 16 formed on the lower surface. In the inner conductor forming holes 12a and 12b, in order to prevent the magnetic field from leaking to the outside, the outer conductor 1 has a length β from the first end surface 11a.
4a is extended and formed. In the inner conductor forming holes 12a and 12b on the first end face 11a side, insulating regions 15 having a length α are provided between the inner conductor 13 and the outer conductor 14a. Therefore, the inner conductor forming holes 12a, 12b, 2
Each of the inner conductors 13 formed inside c has a first end face 11
It is insulated from the outer conductor 14a on the a side. Meanwhile, the second
On the end face 11b side of the inner conductor 13,
It is short-circuited with a.

Since the mounting portion 16 mounts the dielectric substrate 2, the open end 1 of the inner conductor 13 is provided on the lower surface side of the dielectric block 1.
It is selected so that the length from the position 3/2 a distance L / 2 away from the second end surface 11b side is L / 2 and the width W is W, and is formed in a stepped shape. Additional electrodes 17a and 17b are formed on the mounting portion 16 at positions corresponding to the respective inner conductors 13. The additional electrodes 17a and 17b are formed in the inner conductor forming holes 12
It is capacitively coupled to the inner conductors 13 of a and 12b. In order to firmly attach the dielectric substrate 2 around the mounting portion 16,
The pasted electrode 18 is formed in a state of being short-circuited with the outer conductor 14a.

The dielectric substrate 2 is made of a dielectric material having a predetermined relative permittivity, is selected so that its length is L / 2 and its width is W, and is substantially the same as the mounting portion 16. Formed to size. The outer conductor 14b is formed on the lower surface and the side surface of the dielectric substrate 2. Further, in order to strengthen the attachment with the dielectric block 1 around the upper surface of the dielectric substrate 2, an attachment electrode (not shown) short-circuited to the outer conductor 14b at a position corresponding to the attachment electrode 18. ) Is formed. Input / output electrodes 21a and 21b are formed on the left and right side surfaces of the dielectric substrate 2 over the upper and lower surfaces thereof and in a state of being insulated from the outer conductors 14a and 14b. When the dielectric substrate 2 is attached to the dielectric block 1, the input / output electrodes 21a and 21b come into contact with the additional electrodes 17a and 17b and are short-circuited.

The dielectric substrate 2 is attached and fixed to the mounting portion 16 of the dielectric block 1. As a result, the outer conductor 14b of the dielectric substrate 2 and the outer conductor 1 of the dielectric block 1 are
4a is short-circuited, and the input / output electrodes 21a, 21b and the additional electrodes 17a, 17b are short-circuited. Each inner conductor forming hole 12
Outer conductors 14a and 14b are formed around the inner conductors 13a and 12b with a dielectric material sandwiched therebetween. The inner conductor 13 is insulated from the outer conductor 14a at the open end 13a and at the short-circuit end 13b. It is short-circuited with 14a.
Therefore, the inner conductor 13 of each inner conductor forming hole 12a, 12b
Cooperates with the outer conductors 14a and 14b to effectively form two 1's.
A quarter wavelength dielectric coaxial resonator is constructed. Moreover, since the two inner conductors 13 are formed in the dielectric block 1, the dielectric resonant component operates as a two-stage bandpass filter. An air layer 3 having a thickness d is interposed between the dielectric block 1 and the dielectric substrate 2.

FIG. 2 is an equivalent circuit diagram of the dielectric resonant component of FIG. In FIG. 2, C _e is the inner conductor 13 of each inner conductor forming hole 12a, 12b and the input / output electrode 21 in FIG.
a, 21b (additional electrodes 17a, 17b) is an external coupling capacitance, and C _s is the open end 1 in FIG.
It is a tip capacitance formed between 3a and the outer conductor 14a. Further, Z is each inner conductor forming hole 12a, 1 in FIG.
2b is the characteristic impedance of the resonator formed by the inner conductor 13 and the outer conductors 14a and 14b, respectively,
Z ₁ is the characteristic impedance in the portion without the air layer 3 in FIG. 1, and Z ₂ is the characteristic impedance in the portion with the air layer 3 in FIG.

Next, the characteristics of the effective relative permittivity ε _r , capacitance C _i , and characteristic impedance Z of each dielectric coaxial resonator of this dielectric resonance component will be described. In the portion where the air layer 3 is not present, the inner conductor 13 and the outer conductor 14 of the inner conductor forming holes 12a and 12b are formed.
The effective relative permittivity ε _r and the capacitance C _i between a and 5b are large, and the characteristic impedance Z ₁ is small (FIG. 9A).
(See the d = 0 part of (c)). Also, the effective relative permittivity ε
_r , the capacitance C _i , and the characteristic impedance Z ₁ have constant values. On the other hand, in a portion of the air layer 3, the effective relative permittivity ε _r and the capacitance C _i between the inner conductor 13 and the outer conductor 14 of each inner conductor forming hole 12 a, 12 b are small, and the characteristic impedance Z ₂ is large. (See FIGS. 9A to 9C).

By the way, the dielectric substrate 2 has inner conductors 13 and outer conductors 14a, 14b of the respective inner conductor forming holes 12a, 12b.
Since it is mounted on the short-circuited end 13b side where the electric field strength is small, avoiding the open end 13a side where the electric field strength is large, the inner conductor forming holes are formed even if the thickness d of the air layer 3 fluctuates. The effective relative permittivity ε _r , the capacitance C _i , and the characteristic impedance Z ₂ between the inner conductor 13 and the outer conductor 14 of 12a and 12b change only slightly. Therefore, the fluctuations of the effective relative permittivity ε _r , the capacitance C _i , and the characteristic impedance Z of the entire dielectric coaxial resonator are reduced, and the yield is improved. As a result, productivity is improved and production cost and product cost are reduced.

Next, the characteristics of the coupling coefficient K between the dielectric coaxial resonators of this dielectric resonant component will be described. Even (eve)
n) mode, the angular resonance frequency, the resonance frequency, the effective relative permittivity, the characteristic impedance of the portion without the air layer 3, the characteristic impedance of the portion with the air layer 3, the electrical angle of the portion without the air layer 3, the air layer 3 The electrical angle and the speed of light of a part are ω _e , f _e , ε _re , Z _1e , Z _2e , θ _1e , θ ₂ ,
When C ₀ is set, the equations (1), (2), and (3) are established. ω _e C _s = (Z _1e −Z _2e tan θ _1e tan θ _2e ) / {Z ₁ (Z _2e tan θ _2e + Z _1e tan θ _1e )} (1) ω _e = 2πf _e … (2) θ _e = {ω _e L√ (ε _re )} / C ₀ (3) A resonance frequency f _e that satisfies the formulas (1) to (3) is obtained. Similarly, the odd mode resonance frequency f _o
Ask for. The even mode is defined by both inner conductor forming holes 12a, 1
The high frequency signal flows in the same direction in the inner conductor 13 of 2b, and the odd mode is the mode in which the high frequency signal flows in the opposite direction to the inner conductor 13 of both inner conductor forming holes 12a and 12b.

The coupling coefficient K is obtained by substituting the obtained resonance frequencies f _e and f _o into the following equation (4). _{K = 2 | f e -f o} | / (f e + f o) ... (4) Equation (4) Factor binding was determined from K and the thickness of the air layer 3 d
The relationship between and is shown by the curve B1 in FIG. The relationship between the coupling coefficient K of the dielectric resonant component of FIG. 7 and the thickness d of the air layer 3 is shown in the curve B2 of FIG. 3, and the coupling coefficient K of the dielectric resonant component of FIG. This relationship is also shown in the curve B3 of FIG. It can be seen from the curve B1 in FIG. 3 that the coupling coefficient K varies slightly even if the thickness d of the air layer 3 varies.
This is because there is little variation in the effective relative permittivity ε _r , the capacitance C _i , and the characteristic impedance Z of each dielectric coaxial resonator. Therefore, even if the thickness d of the air layer 3 fluctuates, the fluctuation of the coupling coefficient K is small, so that the yield is improved, and as a result, the productivity of the dielectric resonant component is improved,
Production cost and product cost are reduced. It is noted that in the conventional dielectric resonance component, the coupling coefficient K fluctuates greatly when the thickness d of the air layer 3 fluctuates.

FIG. 4 is a diagram showing the structure of a dielectric resonance component of another embodiment of the present invention. The parts corresponding to those of the embodiment of FIG. 1 are designated by the same reference numerals and the description thereof will be omitted. Note that, in FIG. 4, FIG. 4A is a perspective view seen obliquely from above, FIG. 4B is an exploded perspective view seen obliquely from the rear rear of FIG. 4A, and FIG. 4) is a sectional view taken along the line AA ′ of FIG. It should be noted in this embodiment that the length from the position where the mounting portion 16 is separated from the open end 13a by a distance L / 3 to the position where the mounting portion 16 is separated from the short circuit end 13b by a distance L / 3 is L /.
3, the width is selected to be W, and it is formed in a groove shape. The dielectric substrate 2 is formed so as to have a length of L / 3 and a width of W according to the mounting portion 16. An equivalent circuit of this dielectric resonance component is shown in FIG.

Also in the dielectric resonance component of FIG. 4, since the dielectric substrate 2 is attached to the dielectric block 1 at a distance L / 3 from the open end 13a, the portion of the dielectric substrate 2 from the open end 13a is separated. The electric field strength becomes smaller. Therefore, even if the thickness d of the air layer 3 changes, the effective relative permittivity ε _r , the capacitance C _i , and the characteristic impedance Z of each of the dielectric coaxial resonators change only slightly.

With respect to the coupling coefficient K, if the characteristic impedance of the portion of the dielectric substrate 2 where the air layer 3 is present is Z _a and the characteristic impedance of the portion of the dielectric substrate 2 where the air layer 3 is not present Z _b is Z ₂ Is Z ₂ = {πZ ₁ (Z ₁ +
Z ₂ ) cos ² θ _e } / 4Z ₂ (θ _e = {ω _e L√ (ε
_{re)} / 3C 0, ω} e = 2πf e, It should be noted that, for the odd mode instead of the _"e" get the subscript _"o". ) Is calculated. This is substituted into equation (1) described above, the resonance frequency f _e which satisfies expressions (1) to (3), determine the f _o. Substituting these resonance frequencies f _e and f _o into equation (4), the coupling coefficient K
Ask for. The relationship between the coupling coefficient K obtained from the equation (4) and the thickness d of the air layer 3 is shown by the curve B1 in FIG. It should be noted that the relationship between the coupling coefficient K of the dielectric resonant component of FIG. 7 and the thickness d of the air layer 3 is shown by a curve B2, and the relationship between the coupling coefficient K of the dielectric resonant component of FIG. 8 and the thickness d of the air layer 3 is shown. It is shown together with the curve B3. It can be seen from the curve B1 in FIG. 6 that the coupling coefficient K varies slightly even if the thickness d of the air layer 3 varies.

When the coupling coefficient K of the dielectric resonator of FIG. 1 and the coupling coefficient K of the dielectric resonator of FIG. 4 are compared, even if the thickness d of the air layer 3 changes, the dielectric resonance of FIG. The variation of the coupling coefficient K of the container is smaller. This is because the length of the dielectric substrate 2 of the dielectric resonator of FIG. 4 is L / 3, which is shorter than the length L / 2 of the dielectric substrate 2 of the dielectric resonator of FIG. Therefore, the shorter the length of the dielectric substrate 2, the smaller the variation of the effective relative permittivity ε _r , the capacitance C _i , the characteristic impedance Z, and the variation of the coupling coefficient K of each dielectric coaxial resonator.
Further, as described above, the more the dielectric substrate 2 is attached to the position as far as possible from the open end 13a, the variation in the effective relative permittivity ε _r , the capacitance C _i , and the characteristic impedance Z of each dielectric coaxial resonator, The fluctuation of the coupling coefficient K is reduced.

In the above embodiment, two inner conductor forming holes 12a and 12b are formed in the dielectric block 1 and the inner conductor 13 is formed in the inner conductor forming holes 12a and 12b. One inner conductor forming hole may be formed and the inner conductor 13 may be formed in the inner conductor forming hole. Alternatively, three or more inner conductor forming holes may be formed and the inner conductor 13 may be formed in the inner conductor forming hole. It may be formed.

Further, the outer conductor 14a is formed in the first end face 11a and the inner conductor forming holes 12a and 12b on the first end face 11a side.
The outer conductor 14a is not formed in the inner conductor forming holes 12a and 12b on the first end face 11a side, and the outer conductor 14a is not formed in the first end face 11a. You may make it implement.

Further, although the dielectric block 1 is configured as a single unit, a plurality of divided dielectric blocks may be adhered or welded to each other to obtain one dielectric block 1 as a result. . In this case, one or more inner conductor forming holes are provided in each divided dielectric block before bonding.

Further, although the band pass filter is configured, a band elimination filter may be configured and implemented.

[0034]

As described above, in the dielectric resonant component according to the first aspect, the dielectric substrate is attached to the side surface of the dielectric block at a predetermined distance from the open end of the inner conductor to the second end face side. Therefore, the total effective relative permittivity ε _r , capacitance C _i , and characteristic impedance Z of each dielectric coaxial resonator are
Variation is reduced and the yield is improved. As a result, the productivity of the dielectric resonance component is improved, and the production cost and the product cost are reduced. Further, in a dielectric resonance component provided with two or more dielectric coaxial resonators, variations in the total effective dielectric constant ε _r , capacitance C _i , and characteristic impedance Z of each dielectric coaxial resonator are small, The variation of the coupling coefficient K between the coaxial resonators is also reduced, the yield is improved, the productivity of the dielectric resonant component is improved, and the production cost and the product cost are reduced.

[Brief description of drawings]

FIG. 1 is a diagram showing a configuration of a dielectric resonant component of an embodiment of the present invention.

FIG. 2 is an equivalent circuit diagram of the dielectric resonant component of FIG.

3 is a diagram showing the relationship between the thickness d of the air layer 3 and the coupling coefficient K of the dielectric resonant component of FIG. 1 in comparison with the dielectric resonant component of FIGS. 7 and 8.

FIG. 4 is a diagram showing a configuration of a dielectric resonance component of another embodiment of the present invention.

5 is an equivalent circuit diagram of the dielectric resonant component of FIG.

6 is a diagram showing the relationship between the thickness d of the air layer 3 and the coupling coefficient K of the dielectric resonant component of FIG. 4 in comparison with the dielectric resonant component of FIGS. 7 and 8.

FIG. 7 is a diagram showing a configuration of a dielectric resonance component previously proposed by the applicant of the present application.

FIG. 8 is a diagram showing a configuration of another dielectric resonance component previously proposed by the applicant of the present application.

FIG. 9: Thickness of air layer, effective relative permittivity ε _r , capacitance C _i ,
It is a figure which shows the relationship with characteristic impedance Z, and an electric field strength distribution characteristic.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Dielectric block 2 ... Dielectric substrate 3 ... Air layer 11a ... 1st end surface 11b ... 2nd end surface 12a, 12b ... Inner conductor formation hole 13 ... Inner conductor 13a ... Open end 13b ... Short-circuited end 14a, 14b ... Outer conductor

Claims (1)

[Claims] 1. A dielectric resonance component provided with at least one dielectric coaxial resonator, which is made of a dielectric material and has first and second end faces, and the first end face to the second end face. Multiple aspects spanning the first,
And a dielectric block having an inner conductor forming hole that opens at the second end face and penetrates the inside thereof, an outer conductor formed on at least the second end face and the side face of the dielectric block, and the first end face. Side has an open end that is insulated from the outer conductor, and a short-circuited end that short-circuits with the outer conductor on the second end surface side, and an inner conductor formed inside the inner conductor forming hole, and a dielectric material. A dielectric resonance component, comprising: a dielectric substrate which is formed of a dielectric substrate and is attached to a side surface of the dielectric block, the dielectric substrate being located at a predetermined distance from the open end of the inner conductor to the second end face side.