JPH0770414B2 - Method of manufacturing film capacitor - Google Patents

Method of manufacturing film capacitor

Info

Publication number
JPH0770414B2
JPH0770414B2 JP23519987A JP23519987A JPH0770414B2 JP H0770414 B2 JPH0770414 B2 JP H0770414B2 JP 23519987 A JP23519987 A JP 23519987A JP 23519987 A JP23519987 A JP 23519987A JP H0770414 B2 JPH0770414 B2 JP H0770414B2
Authority
JP
Japan
Prior art keywords
film capacitor
ppo
heat treatment
film
hours
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP23519987A
Other languages
Japanese (ja)
Other versions
JPS6477907A (en
Inventor
重成 山村
稔 菊地
久芳 渡辺
正志 森脇
峰康 青戸
淳司 小島
健治 桑田
賢治 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP23519987A priority Critical patent/JPH0770414B2/en
Publication of JPS6477907A publication Critical patent/JPS6477907A/en
Publication of JPH0770414B2 publication Critical patent/JPH0770414B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Description

【発明の詳細な説明】 産業上の利用分野 本発明は電子機器及び電気機器に用いられる主としてチ
ップ型のフィルムコンデンサの製造方法に関するもので
ある。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a chip-type film capacitor mainly used in electronic devices and electric devices.

従来の技術 従来コンデンサはポリフェニレンサルファイド(以下PP
Sと略す)からなる誘電体フィルム上の両面にアルミニ
ウムからなる蒸着電極を形成し、その上にポリフェニレ
ンオキサイド(以下PPOと略す)からなるコーティング
誘電体を形成し所定の寸法で切断し、両面蒸着両面コー
ティングフィルムを作り、次にその両面蒸着両面コーテ
ィングフィルムを数百枚積層し、蒸着電極に電気的接続
を得るため亜鉛からなるメタコリン層を形成して母コン
デンサと成した後、90℃から120℃まで昇温しコーティ
ング誘電体の残留溶剤を除去し温度200℃,1時間のエー
ジングを行ないフライス切断してコンデンサ素子とし、
コムリードを溶接した後エポキシ樹脂を用いてモールド
外装を施し、コムリードを加工して外部電極とすること
により完成品としていた。
Conventional Technology Conventional capacitors are made of polyphenylene sulfide (PP
A vapor deposition electrode made of aluminum is formed on both sides of a dielectric film made of S), and a coating dielectric made of polyphenylene oxide (hereinafter abbreviated as PPO) is formed on it, cut into a predetermined size, and vapor-deposited on both sides. After making a double-sided coating film, then stacking hundreds of double-sided vapor-deposited double-sided coating films, forming a methacholine layer made of zinc to obtain an electrical connection to the vapor deposition electrode and forming a mother capacitor, and then 90 ° C to 120 ° C. The temperature is raised to ℃, the residual solvent of the coating dielectric is removed, the temperature is 200 ℃, aging is performed for 1 hour, and the milling is performed to make a capacitor element.
After the comb leads were welded, a mold exterior was made using epoxy resin, and the comb leads were processed to form external electrodes, thus completing the product.

発明が解決しようとする問題点 近年電子機器,電気機器の小型化,高性能化さらには製
造工程の自動化のため、これらに用いられる電子・電気
部品の小形化,高性能化,チップ化への要望は非常に大
きい。
Problems to be Solved by the Invention In recent years, in order to miniaturize and improve the performance of electronic equipment and electric equipment, and further to automate the manufacturing process, electronic and electric parts used in these equipment are becoming smaller, higher performance, and made into chips. The demand is very large.

従来のチップ型フィルムコンデンサは使用しているPPO
からなるコーティング誘電体の耐熱性が低いために、は
んだ付の際、そのPPOが熱変形を起こし耐電圧が低下す
る等の問題点を有していた。
The conventional chip-type film capacitor uses PPO
Due to the low heat resistance of the coating dielectric made of, the PPO undergoes thermal deformation during soldering, resulting in a decrease in withstand voltage.

本発明ははんだ付時におけるPPOの熱変形による耐電圧
の低下を防止することを目的とする。
An object of the present invention is to prevent reduction in withstand voltage due to thermal deformation of PPO during soldering.

問題点を解決するための手段 本発明はフィルムコンデンサ素子に熱処理を行ない、PP
Oを架橋させてコンデンサの耐熱性を増すことによりは
んだ付時のPPOの変形を防止し耐電圧の低下を防ぎ問題
点の解決を図ろうとするものである。
Means for Solving the Problems The present invention applies a heat treatment to a film capacitor element,
By cross-linking O to increase the heat resistance of the capacitor, the deformation of PPO at the time of soldering is prevented, the decrease of withstand voltage is prevented, and the problem is solved.

作用 即ちフィルムコンデンサ素子に、140℃から190℃の温度
で15時間から150時間の熱処理することによりPPOの架橋
反応が生じ、徐々にPPOが網目構造をとるようになるた
め、それにつれて熱変形温度が高くなり、しかも電気特
性がほとんど変化しないことを見出した。例えばポリフ
ェニレンオキサイドに含まれる高分子化合物の一例であ
るポリ2,6−ジメチル−1.4−フェニレンオキサイドにお
いて、赤外線吸収スペクトルを分析すれば、熱処理を施
した後にはメチル基の吸光度が減少し、カルボニル基の
吸収が新たに出現することからも、側鎖であるメチル基
同士が熱処理により架橋していることが確認できる。そ
の結果はんだ付時のPPOの変形が防止でき、フィルムコ
ンデンサの耐電圧低下の防止が図れたものである。
Action That is, the film capacitor element is heat-treated at a temperature of 140 ° C to 190 ° C for 15 hours to 150 hours to cause a crosslinking reaction of PPO, and gradually the PPO takes on a network structure. It has been found that the value becomes higher and the electric characteristics hardly change. For example, in poly 2,6-dimethyl-1.4-phenylene oxide, which is an example of a polymer compound contained in polyphenylene oxide, the infrared absorption spectrum is analyzed, the absorbance of the methyl group decreases after the heat treatment, and the carbonyl group decreases. It can be confirmed that the methyl groups, which are side chains, are cross-linked by the heat treatment from the fact that the absorption of is newly appeared. As a result, the deformation of PPO during soldering can be prevented, and the withstand voltage of the film capacitor can be prevented from lowering.

実 施 例 (実施例) 以下本発明の一実施例について説明する。厚さ2μmの
PPSからなる誘電体フィルムの両面に厚さ400Åのアルミ
ニウムからなる蒸着電極を形成し、その上に厚さ1μm
のPPOからなるコーティング誘電体を形成して成る幅5mm
の長い両面蒸着両面コーティングフィルムを作り、次に
その両面蒸着両面コーティングフィルムを500枚積層し
その両端面に厚さ0.5mmの亜鉛かならるメタコリン層を
形成して母コンデンサとし、次にこの母コンデンサを90
℃から120℃まで昇温しコーティング誘電体の残留溶剤
を除去した後160℃で50時間の熱処理を行ないPPOを架橋
した後200℃で1時間のエージングを行ないフライス切
断してコンデンサ素子とした。そしてコムリードを溶接
した後エポキシ樹脂を用いてモールド外装を施し、コム
リードを加工して外部電極としてコンデンサを得た。
Example (Example) An example of the present invention will be described below. 2 μm thick
A vapor deposition electrode made of aluminum with a thickness of 400 Å is formed on both sides of a dielectric film made of PPS, and a thickness of 1 μm is formed on it.
5mm wide formed by forming a coating dielectric consisting of PPO
Long double-sided vapor deposition double-sided coating film, then 500 sheets of the double-sided vapor deposition double-sided coating film are laminated, and a 0.5 mm thick metacholine layer made of zinc is formed on both end faces to make a mother capacitor, then this mother capacitor. 90 capacitors
The temperature was raised from ℃ to 120 ℃ to remove the residual solvent of the coating dielectric, heat treatment was carried out at 160 ℃ for 50 hours, PPO was cross-linked, and then aging was carried out at 200 ℃ for 1 hour to make a capacitor element. Then, after welding the comb leads, a mold exterior was applied using epoxy resin, and the comb leads were processed to obtain capacitors as external electrodes.

(従来例) 次に従来例として実施例で得た母コンデンサを90℃から
120℃まで昇温しコーティング誘電体の残留溶剤を除去
した後、温度200℃,1時間のエージングを行ない、フラ
イス切断してコンデンサ素子とし、コムリードを溶接し
た後エポキシ樹脂を用いてモールド外装を施し、コムリ
ードを個別に分離し加工してコンデンサを得た。
(Conventional example) Next, as a conventional example, the mother capacitor obtained in the example
After raising the temperature to 120 ° C to remove the residual solvent in the coating dielectric, aging at 200 ° C for 1 hour, milling it into a capacitor element, welding the comb leads, and then using epoxy resin to mold the exterior. Then, the comb leads were individually separated and processed to obtain capacitors.

以上のようにして得た本発明と従来例のコンデンサを各
100ケずつ260℃のはんだ槽に浸漬する時間を変えコンデ
ンサの平均耐電圧を第1表に示した。その結果本発明で
耐電圧を大きく改善することが可能となった。
Each of the capacitors of the present invention and the conventional example obtained as described above is
The average withstand voltage of the capacitors is shown in Table 1 by changing the time of immersing 100 capacitors each in a solder bath at 260 ° C. As a result, the present invention makes it possible to greatly improve the withstand voltage.

また本発明の他の条件あるいは巻回したフィルムコンデ
ンサにおいても良好な結果を得た。
Good results were also obtained under other conditions of the present invention or in wound film capacitors.

しかし熱処理条件として140℃で15時間以下の場合には2
60℃のはんだ槽に15秒間浸漬した場合耐電圧が50V以下
で架橋が不十分のため効果がなかった.さらに190℃で1
50時間以上の場合では耐電圧は良好であるが架橋反応の
進行が過剰となり誘電正接が急激に増加し問題が生じ
た。
However, if the heat treatment condition is 140 ° C for 15 hours or less, 2
When immersed in a solder bath at 60 ° C for 15 seconds, the withstand voltage was 50 V or less and there was no effect due to insufficient crosslinking. 1 at 190 ° C
In the case of 50 hours or more, the withstand voltage was good, but the progress of the crosslinking reaction was excessive and the dielectric loss tangent rapidly increased, causing a problem.

発明の効果 本発明によるポリフェニレンオキサイドを架橋させる熱
処理を実施することにより熱変形温度が上昇し、これを
フィルムコンデンサに用いた場合、耐電圧を著しく向上
させることが可能となり、信頼性向上が大幅に図れるよ
うになったことと定格電圧を高くできるようになったこ
とは非常に価値がある。
EFFECTS OF THE INVENTION By carrying out a heat treatment for crosslinking polyphenylene oxide according to the present invention, the heat distortion temperature rises, and when this is used for a film capacitor, the withstand voltage can be remarkably improved and the reliability is greatly improved. Being able to achieve this and being able to raise the rated voltage are extremely valuable.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 森脇 正志 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 青戸 峰康 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 小島 淳司 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 桑田 健治 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 石田 賢治 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Masashi Moriwaki 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Junji Kojima, 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd. (72) Kenji Kuwata, 1006 Kadoma, Kadoma City, Osaka Prefecture (72) Kenji Ishida Osaka 1006 Kadoma, Kadoma-shi, Fuchu Matsushita Electric Industrial Co., Ltd.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】ポリフェニレンサルファイドフィルムとア
ルミニウム蒸着電極とポリフェニレンオキサイドのコー
ティング誘電体を巻回もしくは積層して成るフィルムコ
ンデンサ素子を有し、熱処理によりポリフェニレンオキ
サイドを架橋させたことを特徴とするフィルムコンデン
サの製造方法。
1. A film capacitor comprising a film capacitor element formed by winding or laminating a polyphenylene sulfide film, an aluminum vapor deposition electrode, and a coating dielectric of polyphenylene oxide, wherein the polyphenylene oxide is crosslinked by heat treatment. Production method.
【請求項2】温度が140℃から190℃で時間が15時間から
150時間の熱処理を行なったことを特徴とする特許請求
の範囲第1項に記載のフィルムコンデンサの製造方法。
2. Temperature from 140 ° C to 190 ° C and time from 15 hours
The method for producing a film capacitor according to claim 1, wherein the heat treatment is performed for 150 hours.
JP23519987A 1987-09-18 1987-09-18 Method of manufacturing film capacitor Expired - Lifetime JPH0770414B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23519987A JPH0770414B2 (en) 1987-09-18 1987-09-18 Method of manufacturing film capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23519987A JPH0770414B2 (en) 1987-09-18 1987-09-18 Method of manufacturing film capacitor

Publications (2)

Publication Number Publication Date
JPS6477907A JPS6477907A (en) 1989-03-23
JPH0770414B2 true JPH0770414B2 (en) 1995-07-31

Family

ID=16982542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23519987A Expired - Lifetime JPH0770414B2 (en) 1987-09-18 1987-09-18 Method of manufacturing film capacitor

Country Status (1)

Country Link
JP (1) JPH0770414B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6376021B1 (en) * 1996-02-12 2002-04-23 Polymer Alloys Llc Heat treatment of polyphenylene oxide-coated metal
JP2002319316A (en) * 2001-02-15 2002-10-31 Sumitomo Chem Co Ltd Insulating films

Also Published As

Publication number Publication date
JPS6477907A (en) 1989-03-23

Similar Documents

Publication Publication Date Title
EP0336299A2 (en) Solid electrolytic capacitor and method for manufacturing the same
JPS5831510A (en) Multilayer ceramic condenser doped
EP0548996A2 (en) A film capacitor and method for manufacturing the same
JPH0770414B2 (en) Method of manufacturing film capacitor
CN116218008A (en) Polypropylene metallized film and metallized film capacitor
JP4148497B2 (en) Method for producing aluminum foil for capacitor and solid electrolytic capacitor
JP2832651B2 (en) Manufacturing method of multilayer solid electrolytic capacitor
JPH0130286B2 (en)
JPH0762106B2 (en) Dielectric resin composition and film capacitor
JPH02222132A (en) Manufacture of metallized plastic film capacitor
JP2964628B2 (en) Metallized film for capacitor and capacitor provided with the same
JP3363533B2 (en) Solid electrolytic capacitor and method of manufacturing the same
JPH02222131A (en) Manufacture of film capacitor
JPH0770419B2 (en) Method of manufacturing film capacitor
JPH04277609A (en) Method for manufacture of solid electrolytic capacitor
KR102141022B1 (en) Method of manufacturing solid electrolytic capacitor
JP3173403B2 (en) Manufacturing method of multilayer film capacitor
JPH0461485B2 (en)
CN1823397B (en) Method for producing solid electrolytic capacitor
JPH0770413B2 (en) Method of manufacturing film capacitor
JPH04162410A (en) Manufacture of laminated film capacitor
JP2733105B2 (en) Manufacturing method of metallized film capacitor
KR100753618B1 (en) Method of Manufacturing a Solid Electrolytic Capacitor
JPH0645198A (en) Manufacture of solid-state electrolytic capacitor
JPH03231415A (en) Solid electrolytic capacitor