JPH0760975B2 - Complex type semiconductor constant voltage generating circuit device - Google Patents

Description

The present invention relates to an integrated circuit in which a complementary insulated gate field effect transistor and a bipolar transistor are mounted on the same semiconductor substrate, and an input DC voltage applied from the outside is applied to the integrated circuit. On the other hand, the present invention relates to a composite type semiconductor constant voltage generating circuit device that is small in size, consumes less power, and generates a constant voltage lower than a stable input DC voltage.

(Problems to be Solved by Prior Art and Invention) Conventionally, this type of device has a configuration as shown in FIG. In the figure, 1 is a grounded emitter amplification element, 2 is a feedback circuit, 3 is an emitter follower amplifier, Q ₁ and Q ₂ are npn bipolar transistors R ₁ , R ₂ and R ₃ are resistance elements, and 11 is a direct current applied from the outside. A voltage input terminal, 12 is an output terminal of the constant voltage generating circuit, 13 is an input contact of the grounded-emitter amplification element 1, and 14 is an input contact of the emitter-follower amplifier 3. With this configuration, the potential V ₁₂ of the output terminal ₁₂ is ΔV due to some factor such as fluctuation of the load connected to the output terminal 12.
_{If it} fluctuates by ₁₂ , this fluctuation changes the potential V ₁₃ of the input contact 13 by the feedback circuit 2. Only fluctuate. Voltage amplification factor of grounded-emitter amplifier 1
Since A _VE is A _VE = −g _m R ₃ , the potential fluctuation of the input contact 13 is amplified and the potential V ₁₄ of the input contact ₁₄ is Only fluctuate. Where g _m emitter grounded transistor
It is the transconductance of Q ₁ . The voltage amplification factor A _VC of the emitter follower amplifier is , The current amplification factor β _{0 of} an npn bipolar transistor is a large value of about 100, and (β ₀ +1) r ₀
>> 1 + r _s , so A _vc 1. Here, r ₀ is the output impedance of the grounded-emitter transistor, and r _s is the base input impedance of the emitter-follower amplifier. That is, the variation of V ₁₄ is directly transmitted to the output of the constant voltage generating circuit, the negative feedback acts to correct the variation amount △ V ₁₂ of the V _12. The output potential V ₁₂ to variations △ ₁₁ input potentials V ₁₁
Fluctuation of ΔV ₁₂ It is represented by. Therefore, in order to increase the stability against various factors that cause the output potential V ₁₂ to fluctuate in a direct current, the gain A _VE = g _m R ₃ of the grounded-emitter amplifier is increased, and It is effective to make the value 1 approach 1, but g _m is mainly npn
It depends on the performance and operating point of the bipolar transistor Q ₁ , and it is not easy to increase the size. The resistance value can be set arbitrarily, but if R ₃ is increased, the area of the region that constitutes the resistance is increased and the base current for Q ₂ is decreased.
There was a drawback that it deteriorated the responsiveness of Q ₂ . Further, in order to bring γ close to 1, it is necessary to bring R ₁ close to 0 or make R ₂ large, but both of them increase power consumption, and the latter not only leads to an increase in the area occupied by the resistor component. Moreover, since this resistance ratio also affects the set value of the output voltage, there is a drawback that it does not have a large degree of freedom.

FIG. 8 shows a conventional configuration example in which the feedback circuit section has a temperature compensation function. In the figure, 1 is a grounded-emitter amplification element, 2
Is a feedback circuit having a temperature compensation function, 3 is an emitter follower amplifier, Q ₁ , Q ₂ , Q ₃ and Q ₄ are npn bipolar transistors, R ₁ , R ₃ , R ₄ and R ₅ are resistive elements, and 11 is an external element. DC voltage applied from the input terminal, 12 is the output terminal of the constant voltage generation circuit,
Reference numeral 13 is an input contact of the grounded emitter amplification element, and 14 is an input contact of the emitter follower amplifier. Since the was configured, the base of Q _3, Q ₄ determined by the current density ratio of Q _3, Q ₄
Using the emitter-to-emitter voltage difference ΔV _BE , it works to correct the temperature- _dependent variation of the base-emitter voltage V _BE1 of Q ₁ . However, the feedback action for V ₁₂ fluctuations due to DC input voltage fluctuations, DC load current fluctuations, etc. is exactly the same as in the example of FIG. In this case, the npn bipolar transistor Q ₄ and the resistor R ₅ are used instead of the resistor R ₂ .
The feedback amount γ may be discussed using the equivalent resistance R ₀ at the operating point from the collector of Q ₄ to the ground potential instead of R ₂ . In this case, γ approaches 1 because R ₀ has a relatively large resistance value, but R ₁ needs to be large in order to obtain the target set voltage value. In the configuration of FIGS. 7 and 8, V
_A typical example of changes in the potential V ₁₃ of 13 with respect to changes of ₁₂ is shown in FIG. A is an example in the ideal case of the feedback amount γ =, and B is an example in the case of performing feedback with a finite resistance division ratio in order to realize the set output voltage value. That is, the feedback amount γ cannot be brought close to 1 in order to obtain the set potential, and there is a drawback that the area occupied by the feedback circuit section due to the large R ₁ increases.

(Object of the Invention) The present invention has been proposed in order to improve the above-mentioned drawbacks, and an object thereof is to improve the stability against a sudden load current change while reducing the size, the power consumption, and the DC output. It is an object of the present invention to provide a constant voltage generation circuit device that solves the problem of ensuring voltage stability.

(Means for Solving the Problems) In order to achieve the above object, the present invention provides a plurality of p-channel enhancement type MOs on the same semiconductor substrate.
In an integrated circuit device equipped with an SFET, an n-channel enhancement type MOSFET, an npn bipolar transistor, and a pnp bipolar transistor, at least one or more npn
A grounded-emitter amplification element including a bipolar transistor, a feedback circuit that detects a variation in the output voltage and transmits the output voltage to the grounded-emitter amplification element, and an emitter follower amplifier whose output contact is connected to the gate of the first pMOSFET. And the emitter follower amplifier includes a first pMOSFET and a first pMOSFET.
A first pMOSFET including an npn bipolar transistor of
Has a source electrode connected to the collector electrode of the first npn bipolar transistor, a drain electrode of the first pMOSFET connected to a base electrode of the first npn bipolar transistor and an output contact of the grounded-emitter amplification element,
A gate electrode of the first pMOSFET is connected to an emitter of the first npn bipolar transistor, and the connection point forms an output terminal of the constant voltage generating circuit device. Is the gist of the invention.

Therefore, the present invention uses the pMOSFET to reduce the size and power consumption, improve the response of the emitter follower amplifier to a sudden load current change, and secure the gain of the grounded-emitter amplifier also in terms of direct current. Alternatively, the main feature is that the feedback amount γ is brought close to 1 to improve the stability by using a pMOSFET in the feedback circuit. The conventional technique is to use a pMOSFET in which the resistance of the emitter-follower amplifier is fed back from the output voltage to the gate, so that the change in the output voltage due to a sudden load current change is immediately fed back to the gate of the pMOSFET. By changing the base current of the grounded npn bipolar transistor, the response of the bypass transistor is improved, and in terms of direct current, the equivalent resistance is increased by using the characteristics of the saturation current region of the pMOSFET, and the grounded emitter amplifier The difference is that stability is improved by ensuring the gain or by using the non-linearity of the resistance of the pMOSFET used in the feedback circuit to bring the feedback amount to the grounded-emitter amplifier close to 1.

Next, examples of the present invention will be described.

It is needless to say that the embodiment is merely an example, and various modifications and improvements can be made without departing from the spirit of the present invention.

FIG. 1 is a first embodiment of a composite type semiconductor constant voltage generating circuit device of the present invention, in which 1 is a grounded emitter amplification element, 2 is a feedback circuit, 3 is an emitter follower amplifier,
Q ₁ and Q ₂ are npn bipolar transistors, R ₁ and R ₂ are resistance elements, M ₁ is a p-channel enhancement type MOSFET, 11 is an input terminal for a DC voltage applied from the outside, and 12 is an output terminal of the constant voltage generation circuit. , 13 are input contacts of the grounded-emitter amplifier, and 14 are input contacts of the emitter-follower amplifier.

Therefore, the emitter follower amplifier 3 has the first pMOSFET M
₁ and a first npn bipolar transistor Q ₂ with pMOSFE
The source electrode of TM ₁ is connected to the collector electrode of npn bipolar transistor Q ₂ , the drain electrode of pMOSFET M ₁ is connected to the base electrode of npn bipolar transistor Q ₂ and output contact 14 of grounded-emitter amplifier 1, and the gate of pMOSFET M ₁ is connected. The electrode is connected to the emitter of the npn bipolar transistor Q ₂ , and this connection point is the output terminal 12 of the constant voltage generating circuit device.
, The emitter of the bipolar transistor Q ₁ in the grounded-emitter amplification element 1 is grounded, and the base is the feedback circuit 2
Constituting a connected to the connection point of the series resistors R _1, R _2, resistors R ₁
One end of is connected to the output terminal, and the other end of the resistor R ₂ is grounded.

In explaining the operation of the present invention, the pMOSFET shown in FIG.
Pay attention to the static characteristics of. C is the I _DS −V _DS characteristic group when | V _GS | of pMOSFET M ₁ is changed, and the gate-source voltage V _GS of pMOSFET M ₁ is V _GS = V ₁₂ + V ₁₁ , drain-source voltage V _{The DS} is V _DS = V _1Z + V _BE −V ₁₁ . Where V ₁₁ is the potential of 11, V ₁₂ is the potential of 12, V _BE is the base of transistor Q ₂ .
It is the voltage between the emitters. Therefore, when the threshold voltage of the pMOSFET and _{-V T, | V GS -V T} | a _{= V 11 -V 12 -V T,} V T V
_Since it is _BE , the operating point of the pMOSFET is at the point shown in Fig. 2A. Figure 2B shows pMOSFE with | V _DS | ＝ | V _GS −V _T |
The boundary between the linear region and the saturation region characteristic of T is shown. Since the operating point is set in this way, a large DC drain resistance is secured and the gain of the grounded-emitter amplifier is increased. Output voltage of constant voltage generation circuit due to abrupt load current change
When V ₁₁ is activated, it moves to the operating point A'or A "transiently. A'is a transient operating point when V ₁₂ is decreasing and A" is a transient operating point when V ₁₂ is increasing. Since the operating point changes in this way, a change in V ₁₂ promptly changes the drain current of the pMOSFET, which controls the base current of Q ₂ . For example, when V ₁₂ increases, the drain current decreases, the base current of Q ₂ decreases, and V ₁₂ decreases. Since it operates in this way, the effect is to secure the direct current stability of the constant voltage generation circuit and at the same time enhance the stability of the output voltage value due to a sudden load current change in a small size and low current consumption circuit. it can.

FIG. 3 shows a second embodiment of the present invention, in which 1 is an emitter-connected amplifier element, 2 is a feedback circuit,
3 is an emitter follower amplifier, Q ₁ , Q ₂ , Q ₃ and Q ₄ are npn bipolar transistors, R ₄ and R ₅ are resistance elements, M ₁ and M ₂ are p-channel enhancement type MOSFETs, and 11 is externally applied. DC voltage input terminal, 12 is output terminal of constant voltage generator,
Reference numeral 13 is an input contact of the grounded emitter amplification element, and 14 is an input contact of the emitter follower amplifier. In this feedback circuit 2, the source electrode of the second pMOSFET M ₂ is connected to the output terminal 12 of the device, and the gate electrode and drain electrode of the FET are the second npn
Connected to the collector electrode of the bipolar transistor Q ₄ ,
The emitter electrode of the transistor is grounded via a resistor R ₅ , and the base electrode is a first diode D whose one end is connected to the output terminal and the other end of the first resistor R ₄ and the cathode terminal are grounded. It is configured to be connected to ₃ anode terminals. Due to this structure, the temperature compensation function of the feedback circuit is similar to that of the conventional technology, that is, the equivalent resistance value of the base-emitter potential difference ΔV _BE , R ₅ and M ₂ of Q ₃ and Q _{4. Is} used to compensate for the variation of the base-emitter voltage V _BE1 of Q ₁ with temperature. In explaining the operation of the present invention, attention is paid to the DC load characteristics of Q ₄ and M ₂ shown in FIG. C '
Is the collector current I _c when the base current of the npn bipolar transistor Q ₄ is changed and the collector-emitter voltage V
_{CE is} a characteristic group, _CE is an operating point when the output voltage V ₁₂ is obtained, and the potential of the node 13 at this time is V ₁₃ . pMOSFET
M ₂ is the gate-source voltage V _GS = V ₁₃ −V ₁₂ and the drain-source voltage V _DS = V ₁₃ −V ₁₂ , and | V _GS −V _T | <| V _DS | It is a region operation. The drain conductance g _DS at that time is given by | V _GS |> | V _T | g _DS = β | V _T | Given in. Where μ is the hole mobility of pMOSFET, C _ox
Is the gate capacitance, L is the gate length, and W is the gate width. FIG. 4D is a load curve when pMOSFET M ₂ is used.
Is a load straight line when the resistance R ₁ is used in the prior art. When using the resistance of the prior art, with respect to the operating point F of Q _4, whereas it is necessary resistance value with an inclination through the point F and V ₁₂ to obtain an output set potential of V _12, pMOSFETM ₂ When using, the resistance can be reduced by adjusting the gate width W so that the load passes through the point F and V ₁₂ − | V _T |. Therefore, the base current changes due to changes in the DC change or DC load current of the input voltage V _11, have used a resistor in the prior art when V ₁₂ With this becomes V ₁₂ 'changes by △ V ₁₂ If the operating point moves to F ″, the amount of change in V ₁₃ is Q ₄ ,
While the variation amount ΔV ₁₃ is the amount determined by comparing the equivalent resistances R ₀ and R ₁ of the portion formed by R ₅ , if M ₂ is used, the operating point moves to F ′, and V variation △ V _{13 13} may be a partial △ V ₁₂ △ V ₁₃ to the low-resistance. Since such operation, as its effect, the feedback amount γ against DC changes △ V ₁₂ of the V ₁₂ can be brought close to 1, it is possible to increase the direct current stability, small feedback circuit It can also be realized.

FIG. 5 shows a third embodiment of the present invention.
1 is a grounded emitter amplification element, 2 is a feedback circuit, 3 is an emitter follower amplifier, Q ₁ , Q ₂ , Q ₃ and Q ₄ are npn bipolar transistors, R 5 is a resistance element, and M ₁ , M ₂ and M ₃ are p-channel An enhancement type MOSFET, 11 is an input terminal for a DC voltage applied from the outside, 12 is an output terminal of a constant voltage generating circuit, 13 is an input contact of a grounded emitter amplification element, and 14 is an input contact of an emitter follower amplifier. This feedback circuit 2 has a second pMOSFE
The source electrode of TM ₂ is connected to the output terminal 12 of the device, and FETM ₂
Is connected to the gate electrode of the FETM ₂ and the collector electrode of the second npn bipolar transistor Q ₄ , the emitter electrode of the transistor is grounded through the resistor R ₅ , and the base electrode is the drain electrode of the third pMOSFET M ₃ . And the cathode terminal is connected to the anode terminal of the first diode D ₃ , which is grounded, the source electrode of the third pMOSFET M ₃ is connected to the output terminal 12 of the device, and the gate electrode is the second pMOSFET M
It is configured to be connected to _two gate electrodes. Such a resistor R ₄ in FIG. _{4 is used} for p-channel enhancement.
Since the structure is replaced with FETM ₃ , the output voltage has the same stability as in the first and second embodiments, and the direct current supplied to the npn pillar transistor Q ₃ is supplied to pMOSFET M ₃ Are controlled by. The effect is that if the power consumption at the operating point is reduced by using the resistance element R ₄ of the prior art, the area occupied by the feedback circuit is increased due to the increase in the resistance value, while the size is small and the DC power consumption is reduced. There was an improvement in that the reduction of

FIG. 6 shows a fourth embodiment of the present invention.
1 is a grounded emitter amplification element, 2 is a feedback circuit, 3 is an emitter follower amplifier, Q ₁ and Q ₂ are npn bipolar transistors, R ₁ and R ₂ are resistance elements, M ₁ is a p-channel enhancement type MOSFET, and 11 is from the outside. The input terminal of the applied DC voltage, 12 is the output terminal of the constant voltage generating circuit, 13 is the input contact of the grounded-emitter amplification element, and 14 is the input contact of the emitter-follower amplifier.

Therefore, the emitter follower amplifier 3 has the first pMOSFET M
₁ and a first npn bipolar transistor Q ₂ with pMOSFE
The source electrode of TM ₁ is connected to the collector electrode of the npn bipolar transistor Q ₂ , the gate electrode of pMOSFET M ₁ is connected to the base electrode of the npn bipolar transistor Q ₂ and the input contact 14 of the grounded-emitter amplifying element 1, and the npn bipolar transistor Q ₂ is connected. The emitter of ₂ is the output terminal of the constant voltage generator
12 to form the emitter of the bipolar transistor to Q ₁ emitter amplifier element 1 is grounded, the base is connected to the connection point of the DC resistance R _1, R ₂ constituting the feedback circuit 2, resistors R
_One end of ₁ is connected to the output terminal, and the other end of the resistor R ₂ is grounded.

Due to this structure, M ₁ operates in the linear region and acts as a resistor having a conductance of g _DS = β | V _T |. The resistance value can be adjusted by the gate width W of M ₁ . As an effect, it is possible to realize high resistance required for reducing DC power consumption and increasing DC stability with a small occupied area.

In the embodiment of the present invention, the emitter follower amplifier,
It is obvious that the same effect can be obtained even if the grounded-emitter amplifier has a Darlington connection, a diode series connection, or the like.

(Effects of the Invention) As described above, the constant voltage generating circuit of the present embodiment has the pM
By using the characteristics of the OSFET, the bias current of the npn bipolar transistor is supplied to reduce the size and power consumption, improving DC stability and responsiveness to rapid changes in load current. When the supplied power supply voltage is converted to a lower voltage and used as the power supply voltage for the circuit composed of CMOS, the low power supply voltage operation improves the low power consumption of the CMOS circuit and relaxes the withstand voltage margin.
Since the OS can be miniaturized, the CMOS circuit can be speeded up.

[Brief description of drawings]

FIG. 1 is a circuit diagram of a first embodiment of a composite type semiconductor constant voltage generating circuit device of the present invention, and FIG. 2 is a diagram for explaining the operation of a pMOSFET used for an emitter follower amplifier and a grounded-emitter amplification device of the present invention. FIG. 3 is a circuit diagram of a second embodiment of the present invention, FIG. 4 is a diagram for explaining the operation of a feedback circuit of the present invention, and FIG. 5 is a circuit diagram of a third embodiment of the present invention. FIG. 6 is a circuit diagram of a fourth embodiment of the present invention, FIG. 7 is a conventional constant voltage generating circuit device having a grounded-emitter amplifying element, an emitter follower amplifier, and a feedback circuit, and FIG. 8 is temperature compensation for the feedback circuit. A conventional constant voltage generating circuit device having a function, FIG. 9 is a diagram for explaining a feedback amount of a conventional constant voltage generating circuit device. 1-grounded emitter amplification element 2-feedback circuit 3-emitter follower amplifier 11-input terminal for DC voltage applied from the outside 12-output terminal of constant voltage generator 13-input of grounded-emitter amplification element Contact 14 …… Input contact of emitter follower amplifier Q ₁ , Q ₂ , Q ₃ , Q ₄ …… npn bipolar transistor R ₁ , R ₂ , R ₃ , R ₄ , R ₅ ...... Resistance element M ₁ , M ₂ , M ₃ , M ₄ ...... p channel enhancement type MOSFET

Claims (4)

[Claims] 1. A plurality of p layers are formed on the same semiconductor substrate.
In an integrated circuit device equipped with a channel enhancement type MOSFET, an n channel enhancement type MOSFET, an npn bipolar transistor, and a pnp bipolar transistor, a grounded-emitter amplifying element equipped with at least one or more npn bipolar transistors and output voltage fluctuation A feedback circuit for detecting and transmitting to the grounded-emitter amplification element,
An output contact comprising an emitter follower amplifier connected to the gate of the first pMOSFET, the emitter follower amplifier including a first pMOSFET and a first npn bipolar transistor, the source electrode of the first pMOSFET being The drain electrode of the first pMOSFET is connected to the collector electrode of the first npn bipolar transistor, and the drain electrode of the first pMOSFET is connected to the base electrode of the first npn bipolar transistor and the output contact of the grounded-emitter amplifying element. Is connected to the emitter of the first npn bipolar transistor, and this connection point forms the output terminal of the constant voltage generating circuit device. 2. A plurality of p layers are formed on the same semiconductor substrate.
In an integrated circuit device equipped with a channel enhancement type MOSFET, an n channel enhancement type MOSFET, an npn bipolar transistor, and a pnp bipolar transistor, a grounded-emitter amplifying element equipped with at least one or more npn bipolar transistors and output voltage fluctuation A feedback circuit for detecting and transmitting to the grounded-emitter amplification element,
An emitter follower amplifier, the emitter follower amplifier includes a first pMOSFET and a first npn bipolar transistor, the source electrode of the first pMOSFET being the first pMOSFET.
Connected to the collector electrode of the first npn bipolar transistor, the gate electrode and the drain electrode of the first pMOSFET are connected to each other, and are connected to the base electrode of the first npn bipolar transistor. The emitter electrode is connected to the output terminal of the device, the gate electrode of the first pMOSFET is connected to the collector electrode of the bipolar transistor that constitutes the grounded-emitter amplification element, the emitter electrode of the bipolar transistor is grounded, and the base electrode is A compound semiconductor constant voltage generating circuit device, wherein one end is grounded and the other end is connected to a connection point of a series resistor connected to the output terminal of the device. 3. A feedback circuit, wherein a source electrode of a second pMOSFET is connected to an output terminal, a gate electrode and a drain electrode of the FET are connected to a collector electrode of a second npn bipolar transistor, and an emitter electrode of the transistor. Is grounded through a resistor, and the base electrode of the transistor is connected to the other end of the first resistor whose one end is connected to the output terminal and the anode terminal of the first diode whose cathode terminal is grounded. The composite semiconductor constant voltage generating circuit device according to claim 1, characterized in that: 4. The feedback circuit, wherein the source electrode of the second pMOSFET is connected to the output terminal of the device, the drain electrode of the FET is connected to the gate electrode of the FET and the collector electrode of the second npn bipolar transistor, The emitter electrode of the transistor is grounded through a resistor, the base electrode of the transistor is connected to the drain electrode of the third pMOSFET and the anode terminal of the first diode whose cathode terminal is grounded, and the third pMOSFET is connected. 2. The composite semiconductor constant voltage generating circuit device according to claim 1, wherein the source electrode of the device is connected to the output terminal of the device, and the gate electrode is connected to the gate electrode of the second pMOSFET. .