JPH0754584B2 - Method of manufacturing magnetic recording medium - Google Patents
Method of manufacturing magnetic recording mediumInfo
- Publication number
- JPH0754584B2 JPH0754584B2 JP59058651A JP5865184A JPH0754584B2 JP H0754584 B2 JPH0754584 B2 JP H0754584B2 JP 59058651 A JP59058651 A JP 59058651A JP 5865184 A JP5865184 A JP 5865184A JP H0754584 B2 JPH0754584 B2 JP H0754584B2
- Authority
- JP
- Japan
- Prior art keywords
- recording medium
- magnetic recording
- ions
- magnetic field
- manufacturing magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
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- Manufacturing Of Magnetic Record Carriers (AREA)
- Magnetic Record Carriers (AREA)
Description
【発明の詳細な説明】 本発明は磁気記録媒体の製造方法に関する。The present invention relates to a method for manufacturing a magnetic recording medium.
本発明者らは、イオン注入法による合金層の形成につい
て種々検討を重ね、本発明に到達した。The present inventors have made various studies on the formation of an alloy layer by the ion implantation method, and arrived at the present invention.
すなわち、本発明の要旨は、3d遷移金属層に、磁界を印
加しながら、希土類元素をイオン注入することを特徴と
する一軸磁気異方性を示す磁気記録媒体の製造方法にあ
る。That is, the gist of the present invention is a method for producing a magnetic recording medium exhibiting uniaxial magnetic anisotropy, which is characterized in that a rare earth element is ion-implanted into a 3d transition metal layer while applying a magnetic field.
以下、本発明を詳細に説明する。Hereinafter, the present invention will be described in detail.
まず、本発明における3d遷移金属層としては、Ni、Co、
Fe、Mn、Cr等又はこれらの合金が挙げられる。First, as the 3d transition metal layer in the present invention, Ni, Co,
Fe, Mn, Cr and the like, or alloys thereof are mentioned.
これらは、基板自体であってもよく、またセラミック
ス、金属、プラスチックス等の基板上に上記金属を蒸
着、スパッタ法等の方法により、通常、100Å〜数μｍ
程度の厚さに薄膜を形成させたものであってもよく、目
的に応じて適宜選択される。These may be the substrate itself, or usually 100 Å to several μm by a method such as vapor deposition or sputtering of the above metal on a substrate such as ceramics, metal or plastics.
It may be a thin film formed to a thickness of about a certain degree, and is appropriately selected according to the purpose.
一方、希土類元素としては、通常、ジスプロシウム（D
y）、テルビウム（Tb）、ガドリニウム（Gd）、ユーロ
ピウム（Eu）、サマリウム（Sm）、プラセオジム（Pr）
等が挙げられる。On the other hand, as a rare earth element, dysprosium (D
y), terbium (Tb), gadolinium (Gd), europium (Eu), samarium (Sm), praseodymium (Pr)
Etc.
本発明に係る磁気記録媒体の製造方法は、上記金属層に
上記希土類元素イオンを、磁界を印加しながら注入する
ことを特徴とする。上記注入に際しては、通常のイオン
注入装置を用いて行なうことができる。A method of manufacturing a magnetic recording medium according to the present invention is characterized in that the rare earth element ions are injected into the metal layer while applying a magnetic field. The above-mentioned implantation can be performed using a normal ion implantation device.
すなわち、イオン源でイオンを発生させ、たとえば20〜
30KVの加速電圧によりイオンを引出し、ついで200KV程
度までの加速電圧で所定のターゲット、すなわち上記金
属層に注入することができる。That is, ions are generated by the ion source, and for example, 20 to
Ions can be extracted with an accelerating voltage of 30 KV and then injected into a predetermined target, that is, the metal layer with an accelerating voltage up to about 200 KV.
本発明においては、この時に永久磁石又は電磁石により
磁界を印加させることにより、得られる記録媒体に印加
方向の一軸磁気異方性を付与することができる。In the present invention, by applying a magnetic field by a permanent magnet or an electromagnet at this time, uniaxial magnetic anisotropy in the application direction can be imparted to the obtained recording medium.
上記注入において、注入エネルギーはターゲットの膜
厚、質量数及びイオンの質量数により異なり、目的に応
じ適宜、エネルギー、注入量を選定しうる。注入量は、
注入時間、イオン電流によって、コントロールすること
ができ、通常、ピーク位置で数十at,％の濃度まで可能
である。なお、基板の温度は通常、室温〜300℃程度か
ら選ばれる。In the above implantation, the implantation energy varies depending on the film thickness of the target, the mass number and the mass number of the ions, and the energy and the implantation amount can be appropriately selected according to the purpose. The injection volume is
It can be controlled by the injection time and the ion current, and usually, it is possible to reach a concentration of several tens at% at the peak position. The temperature of the substrate is usually selected from room temperature to about 300 ° C.
このようにして得られる記録媒体、たとえばDyFe、TbF
e、GdCo、DyNi、DyCo等は、一軸磁気異方性を有し、た
とえば公知のマスク技術によるイオン打込み領域のパタ
ーニングを作成し、そのパターニングに応じた一軸磁気
異方性を付与することができるので、光磁気記録媒体、
磁気記録媒体（テープ、デイスク、カード等）として好
適に使用しうる。Recording media obtained in this way, for example DyFe, TbF
e, GdCo, DyNi, DyCo, etc. have uniaxial magnetic anisotropy, and for example, by patterning the ion implantation region by a known mask technique, it is possible to impart uniaxial magnetic anisotropy according to the patterning. So, a magneto-optical recording medium,
It can be suitably used as a magnetic recording medium (tape, disk, card, etc.).
以下、実施例により本発明を詳細に説明する。Hereinafter, the present invention will be described in detail with reference to examples.
実施例１ ガラス基板上に蒸着法で膜厚240ÅのFe膜を形成させ
た。ついで、最高加熱温度2,000℃の窒化ボロン製の金
属蒸気の発生用オーブンをもつ“ニールセン型”イオン
源を有するイオン注入装置を用いて、注入エネルギー70
KeVのTb+イオンを1.0×1016イオン／cm2注入した（Tb:
0.3-1.5μA/cm2：電流密度）この注入時に、バイアス磁
界（120-Oe）をFe膜面内に印加した。Example 1 An Fe film having a film thickness of 240 Å was formed on a glass substrate by a vapor deposition method. Then, using an ion implanter having a “Nielsen type” ion source having an oven for generating metal vapor made of boron nitride having a maximum heating temperature of 2,000 ° C.
KeV Tb + ions were implanted at 1.0 × 10 16 ions / cm 2 (Tb:
(0.3-1.5 μA / cm 2 : current density) At the time of this injection, a bias magnetic field (120-Oe) was applied within the Fe film surface.
得られたTbFe膜は、ピーク位置（表面から100Å）で濃
度9at.％を示し、一軸異方性をあらわすフアラーデーBH
ループを示した。The obtained TbFe film shows a concentration of 9 at.% At the peak position (100 Å from the surface) and is a Faraday BH showing uniaxial anisotropy.
Showed a loop.
バイアス磁界と平行方向：保磁力Hc＝15 Oe、 角形比（η）１ バイアス磁界と90°方向：保磁力Hc≒０ Oe 角形比（η）０ 実施例２ 実施例１と同様にして、膜厚250ÅのFe膜に、Dy+イオン
を３×1016イオン／cm2注入した。Direction parallel to bias magnetic field: coercive force Hc = 15 Oe, squareness ratio (η) 1 Bias magnetic field and 90 ° direction: coercive force Hc≈0 Oe squareness ratio (η) 0 Example 2 Dy + ions were implanted at 3 × 10 16 ions / cm 2 into a 250 Å thick Fe film.
バイアス磁界と平行方向:Hc＝25 Oe、η＝１ バイアス磁界と90°方向:Hc＝４ Oe、η＝0.4 実施例３ 実施例１と同様にして、膜厚200ÅのCo膜上に、Dy+イオ
ンを1.60×1015イオン／cm2注入した。Direction parallel to bias magnetic field: Hc = 25 Oe, η = 1 Direction of bias magnetic field and 90 °: Hc = 4 Oe, η = 0.4 Example 3 Dy was formed on a Co film having a film thickness of 200 Å in the same manner as in Example 1. + Ions of 1.60 × 10 15 ions / cm 2 were implanted.
平行方向:Hc＝25 Oe、η＝１ 90°方向:Hc＜10 Oe、η≒0.25Parallel direction: Hc = 25 Oe, η = 1 90 ° Direction: Hc <10 Oe, η≈0.25
Claims (1)
土類元素をイオン注入することを特徴とする一軸磁気異
方性を示す磁気記録媒体の製造方法。1. A method of manufacturing a magnetic recording medium exhibiting uniaxial magnetic anisotropy, which comprises ion-implanting a rare earth element into a 3d transition metal layer while applying a magnetic field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59058651A JPH0754584B2 (en) | 1984-03-27 | 1984-03-27 | Method of manufacturing magnetic recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59058651A JPH0754584B2 (en) | 1984-03-27 | 1984-03-27 | Method of manufacturing magnetic recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60202523A JPS60202523A (en) | 1985-10-14 |
| JPH0754584B2 true JPH0754584B2 (en) | 1995-06-07 |
Family
ID=13090483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59058651A Expired - Lifetime JPH0754584B2 (en) | 1984-03-27 | 1984-03-27 | Method of manufacturing magnetic recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0754584B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8872615B2 (en) * | 2010-05-28 | 2014-10-28 | Institute Of Geological And Nuclear Sciences Limited | Magnetic nanoclusters |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57189340A (en) * | 1981-05-18 | 1982-11-20 | Sekisui Chem Co Ltd | Manufacture of magnetic recording medium |
| JPS58165306A (en) * | 1982-03-26 | 1983-09-30 | Hitachi Ltd | Vertical magnetic recording medium |
| JPS5967612A (en) * | 1982-10-09 | 1984-04-17 | Yoshifumi Sakurai | Manufacture of photomagnetic recording medium |
-
1984
- 1984-03-27 JP JP59058651A patent/JPH0754584B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60202523A (en) | 1985-10-14 |
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