JPH0750679Y2 - Thermopile type infrared sensor - Google Patents

Thermopile type infrared sensor

Info

Publication number
JPH0750679Y2
JPH0750679Y2 JP1526390U JP1526390U JPH0750679Y2 JP H0750679 Y2 JPH0750679 Y2 JP H0750679Y2 JP 1526390 U JP1526390 U JP 1526390U JP 1526390 U JP1526390 U JP 1526390U JP H0750679 Y2 JPH0750679 Y2 JP H0750679Y2
Authority
JP
Japan
Prior art keywords
carbon film
hard carbon
infrared sensor
substrate
diaphragm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1526390U
Other languages
Japanese (ja)
Other versions
JPH03109028U (en
Inventor
建史 神谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP1526390U priority Critical patent/JPH0750679Y2/en
Priority to DE4102524A priority patent/DE4102524C2/en
Priority to US07/648,134 priority patent/US5056929A/en
Publication of JPH03109028U publication Critical patent/JPH03109028U/ja
Application granted granted Critical
Publication of JPH0750679Y2 publication Critical patent/JPH0750679Y2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)

Description

【考案の詳細な説明】 〔産業上の利用分野〕 本考案は、サーモパイル型赤外線センサの構造に関す
る。
DETAILED DESCRIPTION OF THE INVENTION [Industrial application] The present invention relates to a structure of a thermopile type infrared sensor.

〔従来の技術〕[Conventional technology]

従来のサーモパイル型赤外線センサの代表的な構造を、
第2図(a)、(b)を用いて説明する。第2図(a)
は、この物の断面図であり、第2図(b)は平面図であ
る。基板1の片面に被覆された絶縁膜2が、基板の周辺
部においてはヒートシンク3を構成し、基板1の中央部
に穿孔されたピット4部においてはダイアフラム5を構
成している。ダイアフラム5の中央部には赤外線吸収体
としての黒体6が被着されており、黒体6の周囲には、
ダイアフラム5の上に温接点71を有し、ヒートシンク3
の上に冷接点72を有する互いに直列に接続された多数の
熱電対7からなるサーモパイル70が配設されている。黒
体6に吸収された赤外線は温接点71を加熱し、冷接点と
の温度差により熱起電力を生ずる。
Typical structure of conventional thermopile type infrared sensor,
This will be described with reference to FIGS. 2 (a) and 2 (b). Fig. 2 (a)
Is a sectional view of this product, and FIG. 2 (b) is a plan view. The insulating film 2 coated on one surface of the substrate 1 constitutes the heat sink 3 in the peripheral portion of the substrate 1 and the diaphragm 5 in the pit 4 portion punched in the central portion of the substrate 1. A black body 6 serving as an infrared absorber is attached to the central portion of the diaphragm 5, and around the black body 6,
The heat sink 3 has a hot junction 71 on the diaphragm 5.
A thermopile 70 consisting of a number of thermocouples 7 connected in series with one another having cold junctions 72 is arranged on top of them. The infrared rays absorbed by the black body 6 heat the hot junction 71 and generate a thermoelectromotive force due to the temperature difference from the cold junction.

〔考案が解決しようとする課題〕 この構造においては、熱電対7の温接点部71と冷接点部
72との温度差を取り易くするため、ダイアフラム6は、
なるべく熱伝導率が小さい方がよい。しかし、熱伝導率
が小さいダイアフラムを用いると、黒体6が温度測定物
から発せられる赤外線を吸収し蓄えた熱量が、温接点部
71に伝わりにくくなり、感度が低下するという欠点があ
る。
[Problems to be Solved by the Invention] In this structure, in the hot junction portion 71 and the cold junction portion of the thermocouple 7,
In order to make the temperature difference with 72 easier, the diaphragm 6 is
The thermal conductivity should be as low as possible. However, if a diaphragm with a low thermal conductivity is used, the amount of heat that the black body 6 absorbs and stores the infrared rays emitted from the temperature measurement object is
There is a drawback that it becomes difficult to reach 71 and sensitivity decreases.

そこで本考案の目的は、高感度のサーモパイル型赤外線
センサを提供することである。
Therefore, an object of the present invention is to provide a highly sensitive thermopile type infrared sensor.

〔課題を解決するための手段〕[Means for Solving the Problems]

そのため本考案においては、赤外線吸収用の黒体と熱電
対の温接点とを熱伝導率が大きい絶縁体である硬質カー
ボン膜で熱的に結合するようにした。
Therefore, in the present invention, the infrared absorbing black body and the hot junction of the thermocouple are thermally coupled by a hard carbon film which is an insulator having a large thermal conductivity.

〔実施例〕〔Example〕

以下、この考案の実施例を説明する。 An embodiment of this invention will be described below.

第1図はこの考案の実施例を示す断面図である。基板1
としてシリコンウエハーを用い、その片面を熱酸化して
二酸化シリコンからなる絶縁膜2を形成した。次に基板
1の中央部をエッチングにより穿孔してピット4を形成
し、ピット部に残った絶縁膜2をダイアフラム5とし
た。ダイアフラム5の中央部には硬質カーボン膜8を被
覆し、その中央部には赤外線吸収用の黒体6として金黒
を被着した。黒体6の周囲には、互いに直列に接続され
た多数の熱電対7からなるサーモパイルを配置した。こ
の場合、熱電対7の温接点71を硬質カーボン膜8の上に
設け、基板1の周辺部に形成されたヒートシンク3の上
に冷接点72を設けた。
FIG. 1 is a sectional view showing an embodiment of the present invention. Board 1
A silicon wafer was used as a substrate, and one surface thereof was thermally oxidized to form an insulating film 2 made of silicon dioxide. Next, the central portion of the substrate 1 was perforated by etching to form a pit 4, and the insulating film 2 remaining in the pit portion was used as the diaphragm 5. A hard carbon film 8 was coated on the center of the diaphragm 5, and gold black was deposited on the center of the diaphragm 5 as a black body 6 for absorbing infrared rays. Around the black body 6, a thermopile composed of a large number of thermocouples 7 connected in series was arranged. In this case, the hot junction 71 of the thermocouple 7 was provided on the hard carbon film 8, and the cold junction 72 was provided on the heat sink 3 formed in the peripheral portion of the substrate 1.

本案で採用する硬質カーボン膜とは、炭化水素ガス雰囲
気中でのプラズマ重合処理により形成される水素を結合
した非晶質カーボン膜であり、ダイアモンドに次ぐ硬さ
と電気絶縁性を示すと同時に、銅の約5倍という高い熱
伝導性を示す膜である。
The hard carbon film adopted in this proposal is an amorphous carbon film that combines hydrogen and is formed by plasma polymerization in a hydrocarbon gas atmosphere. It is a film showing a high thermal conductivity of about 5 times.

したがって、赤外線を吸収して昇温した黒体6の熱量
は、硬質カーボン膜8を経由して速やかに熱電対7の温
接点71に伝達されると同時に、多数の温接点71相互の温
度差は、硬質カーボン膜8の均熱効果により解消する。
Therefore, the amount of heat of the black body 6 that has absorbed infrared rays and heated up is quickly transmitted to the hot junction 71 of the thermocouple 7 via the hard carbon film 8 and, at the same time, the temperature difference between the many hot junctions 71 is increased. Is eliminated by the soaking effect of the hard carbon film 8.

一方、熱電対7の冷接点72が設置されているヒートシン
ク3は、硬質カーボン膜8から隔離されているので、黒
体6からの熱伝導は極めて少なく、熱電対7の両接点7
1、72間には大きな温度勾配が生じ、大きな熱起電力が
発生する。
On the other hand, since the heat sink 3 in which the cold contacts 72 of the thermocouple 7 are installed is isolated from the hard carbon film 8, the heat conduction from the black body 6 is extremely small, and both contacts 7 of the thermocouple 7 are
A large temperature gradient is generated between 1 and 72, and a large thermoelectromotive force is generated.

〔考案の効果〕[Effect of device]

以上説明したように、本考案のサーモパイル型赤外線セ
ンサにおいては、応答性と感度が同時に改善される。
As explained above, in the thermopile type infrared sensor of the present invention, the responsiveness and the sensitivity are simultaneously improved.

【図面の簡単な説明】[Brief description of drawings]

第1図は本考案のサーモパイル型赤外線センサの構造を
示す断面図であり、第2図は従来のサーモパイル型赤外
線センサの構造を示す断面図および平面図である。 1……基板、2……絶縁膜、3……ヒートシンク、4…
…ピット、5……ダイアフラム、6……黒体、7……熱
電対、71……温接点、72……冷接点、8……硬質カーボ
ン膜。
FIG. 1 is a sectional view showing the structure of a thermopile type infrared sensor of the present invention, and FIG. 2 is a sectional view and a plan view showing the structure of a conventional thermopile type infrared sensor. 1 ... Substrate, 2 ... Insulating film, 3 ... Heat sink, 4 ...
… Pit, 5 …… Diaphragm, 6 …… Black body, 7 …… Thermocouple, 71 …… Hot junction, 72 …… Cold junction, 8 …… Hard carbon film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】基板の片面に被覆された絶縁膜が基板の周
辺部においてはヒートシンクを、基板の中央部に穿孔さ
れたピット部においてはダイアフラムを構成しており、
ダイアフラムの中央部には硬質カーボン膜が積層され、
硬質カーボン膜の中央部には赤外線吸収体としての黒体
が被着され、さらに黒体の周囲には硬質カーボン膜上に
温接点を有し、ヒートシンク上に冷接点を有する互いに
直列に接続された多数の熱電対からなるサーモパイルが
配設されていることを特徴とするサーモパイル型赤外線
センサ。
1. An insulating film coated on one surface of a substrate constitutes a heat sink in the peripheral portion of the substrate, and a diaphragm in a pit portion punched in the central portion of the substrate,
A hard carbon film is laminated in the center of the diaphragm,
A black body as an infrared absorber is applied to the center of the hard carbon film, and the hard carbon film has a hot junction on the hard carbon film and a cold junction on the heat sink connected in series around each other. A thermopile type infrared sensor characterized in that a thermopile composed of a large number of thermocouples is arranged.
JP1526390U 1990-01-30 1990-02-20 Thermopile type infrared sensor Expired - Lifetime JPH0750679Y2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1526390U JPH0750679Y2 (en) 1990-02-20 1990-02-20 Thermopile type infrared sensor
DE4102524A DE4102524C2 (en) 1990-01-30 1991-01-29 Infrared sensor
US07/648,134 US5056929A (en) 1990-01-30 1991-01-30 Temperature compensation type infrared sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1526390U JPH0750679Y2 (en) 1990-02-20 1990-02-20 Thermopile type infrared sensor

Publications (2)

Publication Number Publication Date
JPH03109028U JPH03109028U (en) 1991-11-08
JPH0750679Y2 true JPH0750679Y2 (en) 1995-11-15

Family

ID=31518581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1526390U Expired - Lifetime JPH0750679Y2 (en) 1990-01-30 1990-02-20 Thermopile type infrared sensor

Country Status (1)

Country Link
JP (1) JPH0750679Y2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4978501B2 (en) * 2008-02-14 2012-07-18 日本電気株式会社 Thermal infrared detector and method for manufacturing the same
DE112011101444T5 (en) * 2010-04-26 2013-04-11 HME Co. Ltd. A temperature sensor device and radiation thermometer using this device, manufacturing method for temperature sensor devices, multilayer thin film thermopile using a photoresist film and a radiation thermometer using this thermopile, and manufacturing method of a multilayer thin film thermopile

Also Published As

Publication number Publication date
JPH03109028U (en) 1991-11-08

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