JPH073597B2 - Method for manufacturing electrophotographic photoreceptor - Google Patents
Method for manufacturing electrophotographic photoreceptorInfo
- Publication number
- JPH073597B2 JPH073597B2 JP60130894A JP13089485A JPH073597B2 JP H073597 B2 JPH073597 B2 JP H073597B2 JP 60130894 A JP60130894 A JP 60130894A JP 13089485 A JP13089485 A JP 13089485A JP H073597 B2 JPH073597 B2 JP H073597B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gas
- photosensitive member
- electrophotographic photosensitive
- electrophotographic photoreceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08285—Carbon-based
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） この発明は電子写真感光体の製造方法に関し、特にアモ
ルファス・シリコン感光体表面保護層の表面処理に関す
る。TECHNICAL FIELD The present invention relates to a method for manufacturing an electrophotographic photosensitive member, and more particularly to a surface treatment of an amorphous silicon photosensitive member surface protective layer.
（従来の技術） アモルファス・シリコン（以下ａ−Si:Hという）感光体
は、Se系感光体に比べて、長波長まで高感度、高硬度、
高耐熱性、その他の優れた特性を有しているので、補修
不要の複写機や高速プリンタ、その他の機器に応用が期
待されている。(Prior Art) Amorphous silicon (hereinafter referred to as a-Si: H) photoconductor has higher sensitivity, higher hardness, and longer wavelength than Se-based photoconductor.
Since it has high heat resistance and other excellent properties, it is expected to be applied to copiers, high-speed printers, and other devices that do not require repair.
従来の電子写真感光体は、例えば特開昭57−115556号公
報に開示されているように、導電性の支持体上にａ−S
i:Hの感光層を20〜30μｍ堆積させ、その上に表面電位
保持のために表面保護層として、バンドギャップが広く
且つ硬度が高いa-SixC1-x等を堆積させた構造をとって
いる。このようなa-SixC1-x等の表面保護層を有する電
子写真感光体は、この表面保護層により表面電位の安定
を保護すると共に、その疎水効果によって耐湿度性を改
善することができるものである。A conventional electrophotographic photosensitive member is disclosed in Japanese Patent Application Laid-Open No. 57-115556, for example, in which a-S is formed on a conductive support.
A structure in which a photosensitive layer of i: H is deposited in a thickness of 20 to 30 μm and a-Si x C 1-x having a wide band gap and a high hardness is deposited on the surface as a surface protective layer for maintaining the surface potential. I am taking it. The electrophotographic photoreceptor having a surface protective layer such as a-Si x C 1-x can protect the stability of the surface potential by this surface protective layer and improve the humidity resistance by its hydrophobic effect. It is possible.
（発明が解決しようとする問題点） しかしながら、このような電子写真感光体であっても、
繰り返し行なわれるコロナ帯電の電子写真プロセスによ
って、表面保護層の疎水効果が低下したり、表面抵抗が
下がることにより、印字品質及び耐湿度性が劣化すると
いう問題点があった。(Problems to be Solved by the Invention) However, even with such an electrophotographic photoreceptor,
Due to the repeated corona-charging electrophotographic process, the hydrophobic effect of the surface protective layer is lowered and the surface resistance is lowered, so that the print quality and the humidity resistance are deteriorated.
この発明の目的は、前述した従来の電子写真感光体が有
する問題点に鑑み、コロナ帯電の電子写真プロセスを繰
り返し行っても、印字品質及び耐湿度性に劣化を来たす
ことがない電子写真感光体を提供することにある。In view of the problems of the above-described conventional electrophotographic photosensitive member, an object of the present invention is an electrophotographic photosensitive member that does not deteriorate in print quality and humidity resistance even when a corona charging electrophotographic process is repeatedly performed. To provide.
（問題点を解決するための手段） この発明は、前述の問題点を解決するために、支持体上
にアモルファス・シリコンを主成分とする感光体層を積
層し、この感光体層上にアモルファス・カーボンからな
る表面保護層を積層し、しかる後フッ素を含んだガスで
プラズマ放電処理するものである。(Means for Solving the Problems) In order to solve the above-mentioned problems, according to the present invention, a photosensitive layer containing amorphous silicon as a main component is laminated on a support, and an amorphous layer is formed on the photosensitive layer. -A surface protection layer made of carbon is laminated, and then plasma discharge treatment is performed with a gas containing fluorine.
（作用） 以上説明したような、本発明の電子写真感光体の製造方
法によれば、その表面処理としてフッ素を含んだガスで
プラズマ放電処理しているので、感光層上に積層された
アモルファス・カーボンからなる表面保護層の表面及び
当該層の表面近傍中にCF、CF2等の官能基が形成され、
これにより電子写真感光体表面の疎水性が大巾に改善さ
れ且つ電子写真プロセス時に発生するオゾンの照射によ
る疎水性の劣化を小さく抑え、耐環境性の良い電子写真
感光体を得ることができる。(Operation) According to the method for manufacturing an electrophotographic photosensitive member of the present invention as described above, since plasma discharge treatment is performed with a gas containing fluorine as the surface treatment, the amorphous layer formed on the photosensitive layer is Functional groups such as CF and CF 2 are formed on the surface of the surface protective layer made of carbon and in the vicinity of the surface of the layer,
As a result, the hydrophobicity of the surface of the electrophotographic photosensitive member is greatly improved, the deterioration of the hydrophobicity due to the irradiation of ozone generated during the electrophotographic process is suppressed to a small level, and an electrophotographic photosensitive member having good environment resistance can be obtained.
（実施例） 第１図（Ａ）は、この発明の実施例を説明するための電
子写真感光体の断面図、第１図（Ｂ）は第１図（Ａ）に
示した電子写真感光体の製造に用いた装置の断面図であ
る。以下、第１図（Ａ）及び第１図（Ｂ）を用いて、こ
の発明の実施例について説明する。(Example) FIG. 1 (A) is a sectional view of an electrophotographic photosensitive member for explaining an embodiment of the present invention, and FIG. 1 (B) is an electrophotographic photosensitive member shown in FIG. 1 (A). FIG. 3 is a cross-sectional view of an apparatus used for manufacturing Embodiments of the present invention will be described below with reference to FIGS. 1 (A) and 1 (B).
第１図（Ａ）において、１は導電性の支持体、２はa-S
i:H層、３はa-C:H層、第１図（Ｂ）において、10は円筒
状の反応容器、11はその軸心付近に設けた支持体加熱用
のヒータ、１は第１図（Ａ）に示されているこのヒータ
の周囲を回転するように取り付けられ膜成長が行なわれ
る円筒状の支持体、12は支持体１を回転駆動するための
モータ、13は反応室と連通する穴を有し内部にそれぞれ
ガス導入口14及び排気口15が形成されている外部電極、
16はガス導入口14と結合し、反応室内に流量調整器を介
して原料ガス17を供給するためのガス導入管、18は排気
口15と結合し反応室の反応済みの不要なガスを排気する
ための排気管、19は反応室内の混合ガス圧を制御するた
めの自動圧力制御装置、20はメカニカルブースターポン
プ、21は油回転ポンプ、22はマッチングボックス、23は
高周波電源である。In FIG. 1 (A), 1 is a conductive support, and 2 is aS.
i: H layer, 3 is aC: H layer, and in FIG. 1 (B), 10 is a cylindrical reaction vessel, 11 is a heater for heating a support provided near the axial center of the reaction vessel, and 1 is shown in FIG. A cylindrical support, which is attached so as to rotate around the heater shown in A) and on which film growth is performed, 12 is a motor for rotationally driving the support 1, and 13 is a hole communicating with the reaction chamber. An external electrode having a gas introduction port 14 and an exhaust port 15 formed therein,
Reference numeral 16 is a gas inlet pipe that is connected to the gas inlet port 14 to supply a raw material gas 17 into the reaction chamber through a flow rate regulator, and 18 is connected to an exhaust port 15 to exhaust unnecessary gas that has already reacted in the reaction chamber An exhaust pipe 19 for controlling the pressure, an automatic pressure control device 19 for controlling the mixed gas pressure in the reaction chamber, a mechanical booster pump 20, an oil rotary pump 21, a matching box 22 and a high frequency power source 23.
まず両ポンプ20,21で排気しながら、ヒータ11によって
支持体１を200℃〜300℃の範囲の温度にする。この状態
で、シリコンを含むガス（SiH4，Si2H6，SiCl4，SiF4等
から選ばれた一種又は二種以上のガス）を種原料とし、
これに種々のドーパントガス（O2，N2，N2O，CnHm，P
H3，B2H6等から選ばれた一種又は二種以上のガス）を添
加して、H2，He，Ar等の一般に用いられているキャリア
ガスを用い反応容器10内に導入し、所定の流量・気圧と
し、適当な高周波電力でグロー放電分解することにより
a-Si:H層２を積層する。First, the support 1 is heated to a temperature in the range of 200 ° C. to 300 ° C. by the heater 11 while exhausting with both pumps 20 and 21. In this state, a gas containing silicon (one or more gases selected from SiH 4 , Si 2 H 6 , SiCl 4 , SiF 4, etc.) is used as a seed material,
Various dopant gases (O 2 , N 2 , N 2 O, C n H m , P
H 3, B 2 H was added one or two or more kinds of gases) selected from 6, etc., H 2, H e, generally introduced into the carrier gas used in the used reaction vessel 10, such as A r Then, by setting the flow rate and pressure to a predetermined value and decomposing the glow discharge with appropriate high frequency power
The a-Si: H layer 2 is laminated.
次にa-C:H層３を積層するために、反応容器10内のガス
を排気した後、原料ガスである炭化水素ガス（CnHm,n,m
は整数）を導入して所定の圧力とした後、高周波電力を
印加し、グロー放電分解により所定の膜厚のa-C:H層３
を積層する。Next, in order to stack the aC: H layer 3, the gas in the reaction vessel 10 is exhausted, and then the hydrocarbon gas (C n H m , n,
Is an integer) to a predetermined pressure, high-frequency power is applied, and the aC: H layer 3 with a predetermined thickness is formed by glow discharge decomposition.
Are stacked.
a-C:H層の積層後、反応容器10内のガスを排気し、CF4ガ
スを0.01Torr〜10Torrの気圧となるように導入し、高周
波電力密度0.01W/cm2〜1W/cm2の高周波電力を１分〜１
時間印加してプラズマ処理を行う。このプラズマ処理に
よりa-C:H層３の表面及びこの層の表面近傍中には、官
能基であるCFn（ｎ＝1,2,3）形成される。このプラズマ
処理によるCFnの形成は、１分程度の時間でも行われる
がより長時間の方がa-C:H層３の深くまで行われ良い。
しかし、a-C:H層３もこのプラズマ処理によってわずか
ながらエッチングされるので、必要以上に長時間処理す
ると、a-C:H層３が薄くなり好ましくない。aC: After lamination of the H layer, the gas in the reaction chamber 10 was evacuated by introducing CF 4 gas as a pressure 0.01Torr～10Torr, high-frequency power density of 0.01W / cm 2 ~1W / cm 2 RF Power from 1 minute to 1
Plasma treatment is performed by applying for a time. By this plasma treatment, CF n (n = 1,2,3), which is a functional group, is formed on the surface of the aC: H layer 3 and in the vicinity of the surface of this layer. The formation of CF n by this plasma treatment is performed even for a time of about 1 minute, but longer time may be performed deeper in the aC: H layer 3.
However, since the aC: H layer 3 is also slightly etched by this plasma treatment, the aC: H layer 3 becomes thin if the treatment is performed for an unnecessarily long time, which is not preferable.
次に、このようなプラズマ処理の疎水化効果を第２図に
示す。縦軸はa-C:H表面に0.01ccの水滴を静かに落とし
たときの水滴の直径を表わし、表面の疎水性の尺度とな
る。すなわち直径が小さい程疎水性が大きい。横軸に
は、紫外光とそれにより発生したオゾンの照射時間を示
す。Next, the hydrophobizing effect of such plasma treatment is shown in FIG. The vertical axis represents the diameter of the water droplet when 0.01 cc of water droplet was gently dropped on the aC: H surface, which is a measure of the hydrophobicity of the surface. That is, the smaller the diameter, the greater the hydrophobicity. The horizontal axis indicates the irradiation time of ultraviolet light and ozone generated thereby.
第２図から明らかなように、CF4プラズマ処理した後
は、水滴の径が減少し、疎水性が改善されること、また
紫外線及びオゾン照射に対しても疎水性劣下の速度が非
常に遅くなることがわかる。As is clear from FIG. 2, after CF 4 plasma treatment, the diameter of water droplets is reduced and the hydrophobicity is improved, and the rate of hydrophobic deterioration is extremely high with respect to UV and ozone irradiation. You can see that it will be late.
この効果は、プラズマ処理により分解したフッ素原子が
表面の水素原子と置き換わり、疎水性の非常に強い官能
基のCFn（ｎ＝1,2,3）が出きるためであると考えられ
る。従って、プラズマ処理に用いるガスとしてはフッ素
を含んだガスであれば良く、CF4の他にもF2，C2F6，CHF
3，SF6，NF3，CHClF2等も用いることができる。This effect is considered to be because the fluorine atom decomposed by the plasma treatment replaces the hydrogen atom on the surface, and CF n (n = 1,2,3) of a highly hydrophobic functional group is released. Therefore, the gas used for the plasma treatment may be any gas containing fluorine, such as CF 4 , F 2 , C 2 F 6 , and CHF.
3 , SF 6 , NF 3 , CHClF 2, etc. can also be used.
前述した実施例では、a-Si:H層２及びa-C:H層３をグロ
ー放電分解により形成したが、このa-C:H層３を水素雰
囲気中で固体カーボンをターゲットとして用いた反応性
スパッタリング法で形成しても良いし、或いは蒸着法で
形成することも出来る。これらの方法で形成されたa-S
i:H層及びa-C:H層もその特性においてグロー放電分解法
で形成されたa-Si:H層２及びa-C:H層３と何等変わると
ころがない。In the embodiment described above, the a-Si: H layer 2 and the aC: H layer 3 were formed by glow discharge decomposition. The reactive sputtering method using the aC: H layer 3 as a target in solid hydrogen in a hydrogen atmosphere. Alternatively, it may be formed by a vapor deposition method. AS formed by these methods
The i: H layer and the aC: H layer are the same in characteristics as the a-Si: H layer 2 and the aC: H layer 3 formed by the glow discharge decomposition method.
（発明の効果） 以上、詳細に説明したように、本発明の電子写真感光体
の製造方法によれば、a-C:Hからなる表面保護層の表面
処理をフッ素を含んだガスでプラズマ放電処理すること
により行ない、これにより電子写真感光体表面の疎水性
が大巾に改善され且つ電子写真プロセス時に発生するオ
ゾンの照射による疎水性の劣化を小さく抑え、耐環境性
の良い電子写真感光体を得ることができる。(Effects of the Invention) As described above in detail, according to the method for producing an electrophotographic photosensitive member of the present invention, the surface treatment of the surface protective layer made of aC: H is plasma discharge treated with a gas containing fluorine. By doing so, the hydrophobicity of the surface of the electrophotographic photosensitive member is greatly improved, and the deterioration of the hydrophobicity due to the irradiation of ozone generated during the electrophotographic process is suppressed to be small, and an electrophotographic photosensitive member having good environment resistance is obtained. be able to.
第１図（Ａ）は、この発明の実施例を説明するための、
電子写真感光体の断面図、第１図（Ｂ）は、第１図
（Ａ）に示した電子写真感光体の製造に用いた装置の断
面図、第２図は、本発明の実施例による効果を説明する
ための図である。 １…支持体、２…a-Si:H層、３…a-C:H層、10…反応容
器、11…ヒータ、12…モータ、13…外部電極、14…ガス
導入口、15…排気口、16…ガス導入管、17…原料ガス、
18…排気管、19…自動圧力制御装置、20…メカニカルブ
ースタ、21…油回転ポンプ、22…マッチングボックス、
23…高周波電源。FIG. 1 (A) is for explaining an embodiment of the present invention.
FIG. 1B is a sectional view of an electrophotographic photosensitive member, FIG. 1B is a sectional view of an apparatus used for manufacturing the electrophotographic photosensitive member shown in FIG. 1A, and FIG. 2 is an embodiment of the present invention. It is a figure for demonstrating an effect. 1 ... Support, 2 ... a-Si: H layer, 3 ... aC: H layer, 10 ... Reaction vessel, 11 ... Heater, 12 ... Motor, 13 ... External electrode, 14 ... Gas inlet, 15 ... Exhaust port, 16 ... Gas introduction pipe, 17 ... Raw material gas,
18 ... Exhaust pipe, 19 ... Automatic pressure control device, 20 ... Mechanical booster, 21 ... Oil rotary pump, 22 ... Matching box,
23 ... High frequency power supply.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭60−61761（ＪＰ，Ａ) 特開 昭60−59367（ＪＰ，Ａ) 特開 昭60−144751（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-60-61761 (JP, A) JP-A-60-59367 (JP, A) JP-A-60-144751 (JP, A)
Claims (1)
分とする感光層を積層する工程と、 当該感光層上にアモルファス・カーボンからなる表面保
護層を積層する工程と、 しかる後フッ素を含んだガスでプラズマ放電処理する工
程とを備えてなることを特徴とする電子写真感光体の製
造方法。1. A step of laminating a photosensitive layer containing amorphous silicon as a main component on a support, a step of laminating a surface protective layer made of amorphous carbon on the photosensitive layer, and then containing fluorine. And a step of performing plasma discharge treatment with a gas.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60130894A JPH073597B2 (en) | 1985-06-18 | 1985-06-18 | Method for manufacturing electrophotographic photoreceptor |
| US06/787,367 US4664999A (en) | 1984-10-16 | 1985-10-15 | Method of making electrophotographic member with a-Si photoconductive layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60130894A JPH073597B2 (en) | 1985-06-18 | 1985-06-18 | Method for manufacturing electrophotographic photoreceptor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61289354A JPS61289354A (en) | 1986-12-19 |
| JPH073597B2 true JPH073597B2 (en) | 1995-01-18 |
Family
ID=15045198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60130894A Expired - Lifetime JPH073597B2 (en) | 1984-10-16 | 1985-06-18 | Method for manufacturing electrophotographic photoreceptor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH073597B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002207305A (en) * | 2001-01-05 | 2002-07-26 | Kyocera Corp | Photoreceptor, method for manufacturing the same and image forming apparatus mounted with the photoreceptor |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1083091A (en) * | 1996-09-06 | 1998-03-31 | Canon Inc | Electrophotographic photoreceptor and its production |
| JPH112912A (en) | 1997-04-14 | 1999-01-06 | Canon Inc | Light receiving member, image forming device provided therewith and image forming method using it |
| US6406824B1 (en) | 1998-11-27 | 2002-06-18 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and electrophotographic apparatus having the photosensitive member |
| DE60309253T2 (en) | 2002-08-09 | 2007-05-24 | Canon K.K. | ELECTROPHOTOGRAPHIC LIGHT-SENSITIVE ELEMENT |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6013065A (en) * | 1983-07-01 | 1985-01-23 | Stanley Electric Co Ltd | Water repellent treatment of solid surface |
| JPS6059367A (en) * | 1983-08-19 | 1985-04-05 | ゼロツクス コーポレーシヨン | Xerographic device containing adjusted amorphous silicon |
| JPS6061761A (en) * | 1983-09-16 | 1985-04-09 | Sumitomo Electric Ind Ltd | Photosensitive body for electrophotography |
| JPS6067950A (en) * | 1983-09-22 | 1985-04-18 | Minolta Camera Co Ltd | Photosensitive body |
| JPS60102244A (en) * | 1983-11-08 | 1985-06-06 | Mitsubishi Heavy Ind Ltd | Die forging device having high workability |
-
1985
- 1985-06-18 JP JP60130894A patent/JPH073597B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002207305A (en) * | 2001-01-05 | 2002-07-26 | Kyocera Corp | Photoreceptor, method for manufacturing the same and image forming apparatus mounted with the photoreceptor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61289354A (en) | 1986-12-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4968384A (en) | Method of producing carbon-doped amorphous silicon thin film | |
| US4818560A (en) | Method for preparation of multi-layer structure film | |
| JPH06177123A (en) | Deposition method of insulator | |
| JPS61164219A (en) | Apparatus for manufacturing thin-film transistor array | |
| JPH0514899B2 (en) | ||
| JP6757624B2 (en) | How to process the object to be processed | |
| US4664999A (en) | Method of making electrophotographic member with a-Si photoconductive layer | |
| JP2004095953A (en) | Method for forming silicon nitride deposited film | |
| JPH073597B2 (en) | Method for manufacturing electrophotographic photoreceptor | |
| Hiraoka et al. | High temperature flow resistance of micron sized images in AZ resists | |
| JPH06102686A (en) | Electrophotographic sensitive body | |
| JPS62222076A (en) | Improved apparatus for amorphous silicon film | |
| JPS61289355A (en) | Production of electrophotographic sensitive body | |
| JPS5860747A (en) | Electrophotographic receptor | |
| JP3018627B2 (en) | Manufacturing method of insulating film | |
| JPH0891987A (en) | Apparatus for plasma chemical vapor deposition | |
| JP2562662B2 (en) | Method for forming amorphous silicon film | |
| JP3707989B2 (en) | Plasma processing method | |
| JPH05243163A (en) | Method of removing residual halogen inside reaction oven | |
| JP2608418B2 (en) | Manufacturing method of photoconductive member | |
| JP2867150B2 (en) | Microwave plasma CVD equipment | |
| JP4165855B2 (en) | Thin film manufacturing method | |
| JPH0210368A (en) | Electrophotographic sensitive body | |
| JPH03229871A (en) | Production of insulating film and production of semiconductor device using this insulating film | |
| JP2608417B2 (en) | Manufacturing method of photoconductive member |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |