JPH07326570A - Substrate processing device - Google Patents

Substrate processing device

Info

Publication number
JPH07326570A
JPH07326570A JP14086094A JP14086094A JPH07326570A JP H07326570 A JPH07326570 A JP H07326570A JP 14086094 A JP14086094 A JP 14086094A JP 14086094 A JP14086094 A JP 14086094A JP H07326570 A JPH07326570 A JP H07326570A
Authority
JP
Japan
Prior art keywords
filter
chamber
gas
substrate processing
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14086094A
Other languages
Japanese (ja)
Inventor
Koji Hasegawa
公二 長谷川
Fumio Terai
富美雄 寺井
Masato Goto
正人 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP14086094A priority Critical patent/JPH07326570A/en
Publication of JPH07326570A publication Critical patent/JPH07326570A/en
Pending legal-status Critical Current

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  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To provide a substrate processing device that does not cause a reduction in filter performance resulting from dryness in a filter. CONSTITUTION:While chemical liquid stored in a processing bath 22 circulates via a circulating pipe path 36, particles, etc., are removed by a filter device 50. The filter device 50 comprises a bag-like filter 54 having a filter internal chamber 54a, and chemical liquid is passed through the circulating pipe path 36 from an external unit of the filter 54 to the filter internal chamber 54, whereby particles, etc., are removed to be cleaned. As the chemical liquid becomes under decompression conditions when passing through the filter 54. gas melted in the chemical liquid generates. This gas is apt to remain in the filter internal chamber 54a, but discharged from the filter internal chamber 54a via a gas extracting pipe 71 without drying the filter 54.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、処理槽に貯留した処理
液で半導体基板、液晶用ガラス基板等の基板を処理する
基板処理装置に関し、詳しくは処理液中のパーティクル
を除去するためのフィルタを有する基板処理装置に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for processing substrates such as semiconductor substrates and glass substrates for liquid crystals with a processing liquid stored in a processing tank, and more particularly to a filter for removing particles in the processing liquid. The present invention relates to a substrate processing apparatus having.

【0002】[0002]

【従来の技術】従来、この種の基板処理装置として、ウ
エハやチップの洗浄またはエッチング処理の際に、処理
槽内の薬液を一定の温度に維持するために、薬液を処理
槽外で循環させながらヒータで加熱する装置が知られて
いる(実開平1−82453号公報)。
2. Description of the Related Art Conventionally, as a substrate processing apparatus of this type, a chemical solution is circulated outside the processing tank in order to maintain the chemical solution in the processing tank at a constant temperature when cleaning or etching a wafer or chip. However, a device for heating with a heater is known (Japanese Utility Model Laid-Open No. 1-82453).

【0003】図6にこの基板処理装置100の概略構成
を示す。同図に示すように、この基板処理装置100
は、処理槽102と、処理槽102から溢れた薬液を受
け入れるオーバーフロー槽106と、オーバーフロー槽
106からの薬液を処理槽102に戻す循環系110と
を備えている。循環系110は、循環管路112の途中
に設けたポンプ114、フィルタ装置120及びヒータ
130を備えている。上記フィルタ装置120は、ハウ
ジング122内に、フィルタ内室124aを有する袋状
のフィルタ124を備えており、フィルタ124に薬液
を通すことにより清浄処理するものである。
FIG. 6 shows a schematic structure of the substrate processing apparatus 100. As shown in the figure, this substrate processing apparatus 100
Includes a processing tank 102, an overflow tank 106 that receives the chemical liquid overflowing from the processing tank 102, and a circulation system 110 that returns the chemical liquid from the overflow tank 106 to the processing tank 102. The circulation system 110 includes a pump 114, a filter device 120, and a heater 130 provided in the middle of the circulation pipeline 112. The filter device 120 includes a bag-shaped filter 124 having a filter inner chamber 124a in a housing 122, and a cleaning process is performed by passing a chemical solution through the filter 124.

【0004】こうした基板処理装置100において、処
理槽102から溢れた薬液は、オーバーフロー槽106
で受けられ、ここから循環系110で循環される。循環
系110は、薬液に対して、フィルタ124でパーティ
クルを除去し、ヒータ130で所定温度に加熱し、アッ
プフロー管113を通じて、処理槽102に戻す。この
ように、処理槽102内の薬液を循環させつつ、パーテ
ィクルの除去と薬液の温度制御とを行なっている。
In the substrate processing apparatus 100, the chemical liquid overflowing from the processing tank 102 is overflowed into the overflow tank 106.
And is circulated in the circulation system 110 from here. The circulation system 110 removes particles of the chemical liquid with the filter 124, heats the chemical liquid to a predetermined temperature with the heater 130, and returns the chemical liquid to the processing tank 102 through the upflow pipe 113. In this way, the particles are removed and the temperature of the chemical liquid is controlled while circulating the chemical liquid in the processing tank 102.

【0005】[0005]

【発明が解決しようとする課題】しかし、上記基板処理
装置100では、薬液の循環処理により、フィルタ12
4の能力が想定している期間より短期間に低下し、パー
ティクルの増加と共にポンプ114の負荷が大きくなっ
ているという問題が生じた。この問題の原因を究明した
結果、下記の事実が判明した。
However, in the above substrate processing apparatus 100, the filter 12 is processed by circulating the chemical solution.
There was a problem that the capacity of No. 4 decreased in a shorter period than expected, and the load of the pump 114 increased as the number of particles increased. As a result of investigating the cause of this problem, the following facts were revealed.

【0006】すなわち、薬液がフィルタ124の狭い領
域を通過する際に減圧状態になり、薬液に溶けている気
体(気泡)が出現する。フィルタ124は、袋状になっ
ているので、気体はフィルタ124の上部に溜まって、
フィルタ124を乾燥させる。フィルタ124が乾燥す
ると、樹脂から形成され親水処理を施されているフィル
タ124を疎水性に向かわせて、薬液の濡れ性が悪くな
る。このため、薬液がフィルタ124を通過し難くな
り、フィルタ能力が低下すると共に、ポンプ114の負
荷が大きくなっていたことが分かった。
That is, when the chemical solution passes through a narrow area of the filter 124, the pressure is reduced and gas (bubbles) dissolved in the chemical solution appears. Since the filter 124 has a bag shape, the gas accumulates on the upper part of the filter 124,
The filter 124 is dried. When the filter 124 is dried, the filter 124 made of resin and subjected to the hydrophilic treatment is made to be hydrophobic, and the wettability of the chemical liquid is deteriorated. For this reason, it was found that the chemical solution was difficult to pass through the filter 124, the filter performance was reduced, and the load on the pump 114 was increased.

【0007】本発明は、上記従来の技術の問題点を究明
することによりなされたものであり、フィルタの乾燥に
伴うフィルタ能力の低下を生じない基板処理装置を提供
することを目的とする。
The present invention has been made by investigating the problems of the above-mentioned conventional techniques, and an object of the present invention is to provide a substrate processing apparatus which does not cause a decrease in filter ability due to drying of a filter.

【0008】[0008]

【課題を解決するための手段】上記課題を解決するため
になされた請求項1の発明は、基板を処理する処理槽を
備え、該処理槽に貯留した処理液を処理槽外に設けた循
環管路を経て循環させつつ処理液を清浄処理する基板処
理装置において、第1室と第2室との間に介在し、上記
循環管路を流れる処理液を第1室から第2室へ通すこと
により清浄処理するフィルタと、上記第2室内の気体を
第2室外へ排出する気体排出手段とを備えたことを特徴
とする。
In order to solve the above-mentioned problems, the invention of claim 1 is provided with a processing tank for processing a substrate, and the processing liquid stored in the processing tank is provided outside the processing tank. In a substrate processing apparatus that cleans a processing liquid while circulating it through a pipeline, a processing liquid that is interposed between a first chamber and a second chamber and flows through the circulation pipeline is passed from the first chamber to the second chamber. Thus, a filter for performing a cleaning process and a gas discharge means for discharging the gas in the second chamber to the outside of the second chamber are provided.

【0009】請求項2の発明は、請求項1のフィルタと
して、第2室を囲んだ袋状のものを適用したものであ
る。
According to the second aspect of the invention, as the filter of the first aspect, a bag-shaped member surrounding the second chamber is applied.

【0010】請求項3の発明は、請求項1または請求項
2の気体排出手段として、第2室内に流入口を有し第2
室外に流出口を有する気体抜き管を備えたものを適用し
たものである。
According to a third aspect of the present invention, as the gas discharging means according to the first or second aspect, there is provided a second inlet having an inlet in the second chamber.
The one provided with a gas vent pipe having an outflow port outside the room is applied.

【0011】請求項4の発明は、請求項3の気体抜き管
に、該気体抜き管から流出する処理液の流量を絞る絞り
弁を設けたものである。
According to a fourth aspect of the present invention, the gas vent pipe of the third aspect is provided with a throttle valve for restricting the flow rate of the processing liquid flowing out from the gas vent pipe.

【0012】[0012]

【作用】本発明の請求項1の基板処理装置では、処理槽
に貯留した処理液は、循環管路を介して循環させる。循
環管路の途中には、フィルタが設けられており、該フィ
ルタは、第1室から第2室へ処理液を通過させることに
よりパーティクル等を除去して清浄処理を行なう。処理
液は、第1室からフィルタを通過して第2室に入ると減
圧状態になるから、処理液に溶けていた気体が気泡とな
って発生する。この気泡は、第2室内に溜まろうとする
が、第2室に接続した気体抜き手段を介して外部へ排出
される。このため、第2室には気体が溜まってフィルタ
を乾燥させることがないから、フィルタの濡れ性を維持
し、フィルタ性能の低下を生じさせることもない。
In the substrate processing apparatus according to the first aspect of the present invention, the processing liquid stored in the processing tank is circulated through the circulation pipeline. A filter is provided in the middle of the circulation pipe, and the filter removes particles and the like by passing the processing liquid from the first chamber to the second chamber to perform a cleaning process. When the processing liquid passes through the filter from the first chamber and enters the second chamber, it is in a depressurized state, so that the gas dissolved in the processing liquid is generated as bubbles. The bubbles try to accumulate in the second chamber, but are discharged to the outside through the gas venting means connected to the second chamber. Therefore, the gas is not accumulated in the second chamber to dry the filter, so that the wettability of the filter is maintained and the filter performance is not deteriorated.

【0013】請求項2の発明は、気体の溜り易く、そこ
から抜けにくい袋状のフィルタの第2室内の気体を抜く
ことができる。
According to the second aspect of the present invention, the gas in the second chamber of the bag-shaped filter that allows the gas to easily collect and does not easily escape from the gas can be discharged.

【0014】請求項3の発明は、請求項1または請求項
2の気体排出手段として、第2室内に流入口を有し第2
室外に流出口を有する気体抜き管を用いることにより、
第2室内の気体を簡単な構成で抜くことができる。
According to a third aspect of the invention, as the gas discharging means according to the first or second aspect, there is provided a second inlet having an inlet in the second chamber.
By using a gas vent tube with an outlet outside the room,
The gas in the second chamber can be evacuated with a simple structure.

【0015】請求項4の発明は、請求項3の気体抜き管
に、絞り弁を設けることにより、気体の排出の際に、処
理液の流出も防止することができる。
According to the fourth aspect of the present invention, by providing the gas vent pipe of the third aspect with a throttle valve, it is possible to prevent the processing liquid from flowing out when the gas is discharged.

【0016】[0016]

【実施例】以上説明した本発明の構成・作用を一層明ら
かにするために、以下本発明の好適な実施例について説
明する。
Preferred embodiments of the present invention will be described below in order to further clarify the structure and operation of the present invention described above.

【0017】図1は本発明の一実施例に係る基板処理装
置20を示す概略構成図である。図1に示すように、基
板処理装置20は、石英ガラスからなり薬液を蓄える処
理槽22と、処理槽22の外周に設けられ処理槽22か
ら溢れ出た薬液を受けるオーバーフロー槽24と、オー
バーフロー槽24の薬液を処理槽22に戻す循環系30
とを備える。循環系30は、オーバーフロー槽24の底
壁に設けられた薬液の流出口32を始点とし、処理槽2
2の内部に設けられたアップフロー管34a,34bを
終点とする循環管路36から構成されている。
FIG. 1 is a schematic configuration diagram showing a substrate processing apparatus 20 according to an embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus 20 includes a processing tank 22 made of quartz glass for storing a chemical solution, an overflow tank 24 provided on the outer periphery of the processing tank 22 for receiving the chemical solution overflowing from the processing tank 22, and an overflow tank. Circulation system 30 for returning the chemical liquid of 24 to the processing tank 22
With. The circulation system 30 starts from the chemical solution outlet 32 provided on the bottom wall of the overflow tank 24, and the treatment tank 2
2, the upflow pipes 34a, 34b are provided inside the circulation pipe line 36.

【0018】上記循環系30の循環管路36の途中に
は、オーバーフロー槽24側から順にポンプ40、フィ
ルタ装置50、ヒータ装置60が設けられている。
A pump 40, a filter device 50 and a heater device 60 are provided in this order from the overflow tank 24 side in the middle of the circulation line 36 of the circulation system 30.

【0019】フィルタ装置50は、図2ないし図4に示
すように、第1室としてのハウジング室52aを有する
ハウジング52を備えている。ハウジング52の下部に
は、薬液の流入口53a、流出口53b及び気体抜き出
口53cが設けられている。流入口53aには循環管路
36の接続部36aが接続され、一方、流出口53bに
は循環管路36の接続部36bが接続されている。
As shown in FIGS. 2 to 4, the filter device 50 includes a housing 52 having a housing chamber 52a as a first chamber. At the lower part of the housing 52, an inflow port 53a, an outflow port 53b and a gas outlet port 53c for the chemical liquid are provided. The connection portion 36a of the circulation pipeline 36 is connected to the inflow port 53a, while the connection portion 36b of the circulation pipeline 36 is connected to the outflow port 53b.

【0020】ハウジング52のハウジング室52a内に
は、フィルタ54が収納されている。フィルタ54は、
襞状でかつ第2室としてのフィルタ内室54aを有する
袋状に畳まれて支持枠体56に支持されている。フィル
タ54は、4フッ化エチレン(PTEF)から形成さ
れ、その表面をイソプロピールアルコール(IPA)で
コーティングすることにより親水性を付与している。
A filter 54 is housed in the housing chamber 52a of the housing 52. The filter 54 is
It is folded in a bag shape having a filter inner chamber 54a as a second chamber and is supported by the support frame 56. The filter 54 is formed from tetrafluoroethylene (PTEF), and its surface is coated with isopropyl alcohol (IPA) to impart hydrophilicity.

【0021】また、上記フィルタ54のフィルタ内室5
4aには、細い管から形成された気体抜き管71が挿入
されている。気体抜き管71は、フィルタ内室54aの
上部に流入口71aを有し、ハウジング52の気体抜き
出口53cを経て、他端の流出口71bがオーバーフロ
ー槽24に接続されている。
The filter inner chamber 5 of the filter 54 is also provided.
A gas vent pipe 71 formed of a thin pipe is inserted into 4a. The gas vent pipe 71 has an inflow port 71a in the upper part of the filter inner chamber 54a, and the outflow port 71b at the other end is connected to the overflow tank 24 via the gas vent port 53c of the housing 52.

【0022】なお、フィルタ装置50のハウジング52
には、ハウジング室52a内の気体を抜くための上部リ
ターン管80を設け、これをオーバーフロー槽24に接
続してポンプ40から送られた薬液中の気体を戻すよう
に構成されている。
The housing 52 of the filter device 50
Is provided with an upper return pipe 80 for removing the gas in the housing chamber 52a, and is connected to the overflow tank 24 to return the gas in the chemical liquid sent from the pump 40.

【0023】一方、図1に示すヒータ装置60は、ヒー
タ内管路61の外周面にヒータ62を被覆し、外側を円
筒状のハウジング63で覆ったものである。なお、ヒー
タ62の被覆は耐熱コーティングによってヒータ内管路
61の外周面に固定されている。ヒータ装置60のヒー
タ内管路61の出口に接続された循環管路36は、アッ
プフロー管34a,34bに接続されている。アップフ
ロー管34a,34bは、長手方向に複数の孔をあけた
パイプ形状のもので、循環管路36を循環してきた薬液
を処理槽22内にシャワー状に噴射する。
On the other hand, in the heater device 60 shown in FIG. 1, the heater 62 is covered on the outer peripheral surface of the heater inner pipe line 61, and the outer side is covered with a cylindrical housing 63. The coating of the heater 62 is fixed to the outer peripheral surface of the heater inner pipe line 61 by heat resistant coating. The circulation conduit 36 connected to the outlet of the heater inner conduit 61 of the heater device 60 is connected to the upflow pipes 34a and 34b. The upflow pipes 34a and 34b are pipe-shaped and have a plurality of holes formed in the longitudinal direction, and spray the chemical liquid circulated through the circulation pipe line 36 into the processing tank 22 in a shower shape.

【0024】次に、基板処理装置20の動作について説
明する。この基板処理装置20では、オーバーフロー槽
24の薬液がポンプ40により循環管路36を介してフ
ィルタ装置50に送られ、該フィルタ装置50を経て浄
化され、ヒータ装置60に圧送される。ヒータ装置60
へ圧送された薬液は、ヒータ62によって加熱され、循
環管路36を経てアップフロー管34a,34bから処
理槽22内へ送られる。処理槽22内へ圧送された薬液
は、処理槽22内の薬液を攪拌するとともにオーバーフ
ロー槽24へ溢れさせる。その後、オーバーフロー槽2
4で受けた薬液は、ポンプ40によってフィルタ装置5
0側に送られる。こうした動作により処理槽22内の薬
液は循環しつつフィルタ装置50による清浄処理及びヒ
ータ装置60による所定温度の維持が行なわれる。
Next, the operation of the substrate processing apparatus 20 will be described. In the substrate processing apparatus 20, the chemical liquid in the overflow tank 24 is sent by the pump 40 to the filter device 50 through the circulation pipe 36, purified through the filter device 50, and sent under pressure to the heater device 60. Heater device 60
The chemical liquid pressure-fed to is heated by the heater 62 and is sent into the processing tank 22 through the circulation conduit 36 and the upflow pipes 34a and 34b. The chemical solution pumped into the processing tank 22 stirs the chemical solution in the processing tank 22 and causes the chemical solution to overflow into the overflow tank 24. After that, overflow tank 2
The chemical solution received in 4 is filtered by the pump 40 in the filter device 5
It is sent to the 0 side. By such an operation, the cleaning liquid is circulated in the processing tank 22 and the filter device 50 performs the cleaning process and the heater device 60 maintains the predetermined temperature.

【0025】上記実施例に係るフィルタ装置50におい
て、フィルタ装置50により薬液がフィルタ54を通過
してフィルタ内室54aに入ると減圧雰囲気になり、薬
液中に溶けていた気体がフィルタ内室54aの上部に溜
まろうとする。しかし、この気体は、フィルタ内室54
aの液圧により圧縮され、気体抜き管71を経て、オー
バーフロー槽24に排出されることになる。
In the filter device 50 according to the above embodiment, when the chemical liquid passes through the filter 54 and enters the filter inner chamber 54a by the filter device 50, a reduced pressure atmosphere is created, and the gas dissolved in the chemical liquid is stored in the filter inner chamber 54a. Trying to accumulate at the top. However, this gas is
It is compressed by the hydraulic pressure of a and is discharged to the overflow tank 24 through the gas vent pipe 71.

【0026】したがって、フィルタ54のフィルタ内室
54aには、気体が溜まらず、フィルタ54の上部を乾
燥させることがない。よって、フィルタ54は、親水性
を維持し、フィルタ54の性能の低下を生じさせない。
Therefore, the gas is not accumulated in the filter inner chamber 54a of the filter 54, and the upper portion of the filter 54 is not dried. Therefore, the filter 54 maintains hydrophilicity and does not cause the performance of the filter 54 to deteriorate.

【0027】また、フィルタ54の乾燥に伴う目詰まり
状態もないから、薬液を圧送するポンプ40の負荷も使
用と共に増大することがなく、よって、小型のポンプ4
0を使用することもでき、ポンプ40の寿命も延びる。
Further, since there is no clogging caused by the drying of the filter 54, the load of the pump 40 for pumping the chemical liquid does not increase with use, and therefore the small pump 4 is used.
It is possible to use 0, and the life of the pump 40 is extended.

【0028】さらに、フィルタ54の部分で薬液の流量
を抑えることもないから、安定した流量で洗浄処理を維
持することができる。
Further, since the flow rate of the chemical solution is not suppressed in the filter 54 portion, the cleaning process can be maintained at a stable flow rate.

【0029】なお、気体抜き管71は、オーバーフロー
槽24にその流出口71bを配設することにより、気体
抜き管71を介して薬液がフィルタ装置50から一部流
出した場合に、オーバーフロー槽24でその薬液を受け
ることができるようにするためである。
The gas vent pipe 71 is provided in the overflow tank 24 so that when the chemical solution partially flows out of the filter device 50 through the gas vent pipe 71, the overflow tank 24 is provided in the overflow tank 24. This is so that the drug solution can be received.

【0030】上述した図1の実施例では、フィルタ装置
50をポンプ40とヒータ62との間に設けたが、フィ
ルタ装置50で薬液を洗浄する構成であれば、その位置
関係は特に限定されない。たとえば、図5に示すよう
に、フィルタ装置50Bをヒータ装置60Bの下流側に
設けてもよい。この場合には、薬液をヒータ装置60B
で加熱した際に発生する気体も、同時に除去することが
できる。
In the embodiment of FIG. 1 described above, the filter device 50 is provided between the pump 40 and the heater 62, but the positional relationship is not particularly limited as long as the filter device 50 cleans the chemical liquid. For example, as shown in FIG. 5, the filter device 50B may be provided on the downstream side of the heater device 60B. In this case, the heater 60B
The gas generated when heated in can also be removed at the same time.

【0031】また、上記実施例では、フィルタ装置内の
気体をオーバーフロー槽24へ戻すための手段として、
液量を少なくするために細い管で構成したが、これに限
らず、図5に示す気体抜き管71Bに絞り弁70Bを設
けてもよい。この場合には、薬液の流量に応じて適宜、
気体の抜け量を調節することができる。
Further, in the above embodiment, as means for returning the gas in the filter device to the overflow tank 24,
Although the thin pipe is used to reduce the liquid amount, the present invention is not limited to this, and the gas vent pipe 71B shown in FIG. 5 may be provided with the throttle valve 70B. In this case, depending on the flow rate of the chemical solution,
The amount of gas escape can be adjusted.

【0032】なお、この発明は上記実施例に限られるも
のではなく、その要旨を逸脱しない範囲において種々の
態様において実施することが可能であり、例えば次のよ
うな変形も可能である。
The present invention is not limited to the above-described embodiments, but can be carried out in various modes without departing from the scope of the invention, and the following modifications can be made.

【0033】(1) 上記実施例では、ヒータ装置を備
えた実施例について説明したが、ヒータ装置がない機構
にも適用することができるのは勿論である。
(1) In the above embodiment, an embodiment having a heater device was described, but it goes without saying that it can be applied to a mechanism without a heater device.

【0034】(2) また、上記実施例では、フィルタ
として、袋状のものについて説明したが、これに限ら
ず、第1室と第2室の間に介在し、第2室が密閉室とな
って気体の溜まりやすい各種のフィルタに適用すること
ができる。
(2) In the above embodiment, the bag-shaped filter is described, but the filter is not limited to this, and the filter is interposed between the first chamber and the second chamber, and the second chamber is a closed chamber. Therefore, it can be applied to various filters in which gas easily accumulates.

【0035】[0035]

【発明の効果】以上説明したように本発明の請求項1の
基板処理装置によれば、第1室から第2室へ処理液を通
して清浄処理するフィルタの第2室に、気体抜き手段を
設けることにより、第2室内に発生する気体が速やかに
外へ排出され、フィルタを乾燥させることがないので、
フィルタの濡れ性を維持し、フィルタ性能の低下を生じ
させることもない。
As described above, according to the substrate processing apparatus of the first aspect of the present invention, the degassing means is provided in the second chamber of the filter for passing the processing liquid from the first chamber to the second chamber for cleaning. As a result, the gas generated in the second chamber is quickly discharged to the outside and the filter is not dried.
The wettability of the filter is maintained and the filter performance is not deteriorated.

【0036】請求項2の発明によれば、請求項1のフィ
ルタとして、気体が溜まり易く、そこから抜けにくい袋
状のフィルタ内の第2室内の気体を抜くことができる。
According to the second aspect of the invention, as the filter of the first aspect, it is possible to remove the gas in the second chamber in the bag-shaped filter in which the gas easily collects and is difficult to escape.

【0037】請求項3の発明によれば、請求項1または
請求項2の気体排出手段として第2室内に流入口を有し
第2室外に流出口を有する気体抜き管を用いることによ
り、第2室内の気体を簡単な構成で抜くことができる。
According to the invention of claim 3, as the gas discharging means of claim 1 or 2, by using a gas vent pipe having an inflow port inside the second chamber and an outflow port outside the second chamber, The gas in the two chambers can be removed with a simple configuration.

【0038】請求項4の発明は、請求項3の気体抜き管
に、絞り弁を設けることにより、気体とともに処理液の
流出を好適に防止することができる。
According to the fourth aspect of the present invention, by providing the gas vent pipe of the third aspect with a throttle valve, it is possible to suitably prevent the processing liquid from flowing out together with the gas.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例に係る基板処理装置を示す概
略構成図。
FIG. 1 is a schematic configuration diagram showing a substrate processing apparatus according to an embodiment of the present invention.

【図2】同実施例のフィルタ装置を説明する説明図。FIG. 2 is an explanatory diagram illustrating a filter device of the same embodiment.

【図3】同実施例のフィルタ装置を一部破断して示す斜
視図。
FIG. 3 is a perspective view showing the filter device of the embodiment with a part thereof cut away.

【図4】同実施例のフィルタ装置の水平方向の断面図。FIG. 4 is a horizontal sectional view of the filter device according to the embodiment.

【図5】本発明の他の実施例に係る基板処理装置を示す
概略構成図。
FIG. 5 is a schematic configuration diagram showing a substrate processing apparatus according to another embodiment of the present invention.

【図6】従来の基板処理装置を示す概略構成図。FIG. 6 is a schematic configuration diagram showing a conventional substrate processing apparatus.

【符号の説明】[Explanation of symbols]

20…基板処理装置 22…処理槽 24…オーバーフロー槽 30…循環系 32…流出口 34a,34b…アップフロー管 36…循環管路 36a…接続部 36b…接続部 40…ポンプ 50…フィルタ装置 50B…フィルタ装置 52…ハウジング 52a…ハウジング室 53a…流入口 53b…流出口 53c…出口 54…フィルタ 54a…フィルタ内室 56…支持枠体 60…ヒータ装置 60B…ヒータ装置 61…ヒータ内管路 62…ヒータ 63…ハウジング 70B…絞り弁 71…気体抜き管 71a…流入口 71b…流出口 71B…気体抜き管 80…上部リターン管 20 ... Substrate processing apparatus 22 ... Processing tank 24 ... Overflow tank 30 ... Circulation system 32 ... Outflow port 34a, 34b ... Upflow pipe 36 ... Circulation pipeline 36a ... Connection part 36b ... Connection part 40 ... Pump 50 ... Filter device 50B ... Filter device 52 ... Housing 52a ... Housing chamber 53a ... Inflow port 53b ... Outflow port 53c ... Outlet 54 ... Filter 54a ... Filter inner chamber 56 ... Support frame 60 ... Heater device 60B ... Heater device 61 ... Heater inner conduit 62 ... Heater 63 ... Housing 70B ... Throttle valve 71 ... Gas vent pipe 71a ... Inflow port 71b ... Outflow port 71B ... Gas vent pipe 80 ... Upper return pipe

───────────────────────────────────────────────────── フロントページの続き (72)発明者 後藤 正人 滋賀県野洲郡野洲町大字三上字口ノ川原 2426番1 大日本スクリーン製造株式会社 野洲事業所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masato Goto 2426-1 Kuchinogawara, Mikami, Yasu-machi, Yasu-gun, Shiga Dainippon Screen Mfg. Co., Ltd. Yasu Plant

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 基板を処理する処理槽を備え、該処理槽
に貯留した処理液を処理槽外に設けた循環管路を経て循
環させつつ処理液を清浄処理する基板処理装置におい
て、 第1室と第2室との間に介在し、上記循環管路を流れる
処理液を第1室から第2室へ通すことにより清浄処理す
るフィルタと、 上記第2室内の気体を第2室外へ排出する気体排出手段
とを備えたことを特徴とする基板処理装置。
1. A substrate processing apparatus comprising a processing bath for processing a substrate, wherein the processing liquid stored in the processing bath is circulated through a circulation pipe provided outside the processing bath to clean the processing liquid. A filter which is interposed between the chamber and the second chamber and cleans the treatment liquid flowing through the circulation conduit from the first chamber to the second chamber, and the gas in the second chamber to the outside of the second chamber A substrate processing apparatus, comprising:
【請求項2】 上記フィルタは、第2室を囲んだ袋状で
ある請求項1に記載の基板処理装置。
2. The substrate processing apparatus according to claim 1, wherein the filter has a bag shape surrounding the second chamber.
【請求項3】 上記気体排出手段は、上記第2室内に流
入口を有し第2室外に流出口を有する気体抜き管を備え
た請求項1または請求項2に記載の基板処理装置。
3. The substrate processing apparatus according to claim 1, wherein the gas discharge means includes a gas vent pipe having an inflow port inside the second chamber and an outflow port outside the second chamber.
【請求項4】 請求項3の気体抜き管に、該該気体抜き
管を流れる処理液の流量を絞る絞り弁を設けた基板処理
装置。
4. A substrate processing apparatus, wherein the gas vent pipe according to claim 3 is provided with a throttle valve for throttling the flow rate of the processing liquid flowing through the gas vent pipe.
JP14086094A 1994-05-30 1994-05-30 Substrate processing device Pending JPH07326570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14086094A JPH07326570A (en) 1994-05-30 1994-05-30 Substrate processing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14086094A JPH07326570A (en) 1994-05-30 1994-05-30 Substrate processing device

Publications (1)

Publication Number Publication Date
JPH07326570A true JPH07326570A (en) 1995-12-12

Family

ID=15278433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14086094A Pending JPH07326570A (en) 1994-05-30 1994-05-30 Substrate processing device

Country Status (1)

Country Link
JP (1) JPH07326570A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007258367A (en) * 2006-03-22 2007-10-04 Matsushita Electric Ind Co Ltd Chemical solution supplying apparatus and manufacturing method of semiconductor device
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US7841788B2 (en) 2006-03-22 2010-11-30 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
US7981286B2 (en) 2004-09-15 2011-07-19 Dainippon Screen Mfg Co., Ltd. Substrate processing apparatus and method of removing particles
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Publication number Priority date Publication date Assignee Title
US7981286B2 (en) 2004-09-15 2011-07-19 Dainippon Screen Mfg Co., Ltd. Substrate processing apparatus and method of removing particles
JP2007258367A (en) * 2006-03-22 2007-10-04 Matsushita Electric Ind Co Ltd Chemical solution supplying apparatus and manufacturing method of semiconductor device
US7841788B2 (en) 2006-03-22 2010-11-30 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method
JP4646234B2 (en) * 2006-03-22 2011-03-09 パナソニック株式会社 Chemical supply device and method for manufacturing semiconductor device
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