JPH07325384A - Dielectric mask, method and device for producing the same - Google Patents

Abstract

PURPOSE:To obtain a dielectric mask capable of improving reflectance by providing a light-transmitting substrate, specified metal films, dielectric multilayer thin films and plural apertures. CONSTITUTION:The dielectric mask 19 is produced by forming an reflection preventive film 16 and a metal film 17 on a transmitting substrate 1, and further alternately laminating first and second dielectric members 2, 3 having different refractive indices thereon to form a dielectric multilayer thin film 4. Plural apertures 18 are formed penetrating in a specified position in the dielectric multilayer thin film 4 and metal film 17 by abrasion processing to obtain a desired pattern. By forming the metal film 17 having high reflectance between the reflection preventive film 16 and the dielectric multilayer thin film 4, laser light transmitting through the dielectric multilayer thin film 4 is reflected to the light source side. Therefore, laser light transmitting through the mask can be reduced to a negligible degree, and the energy density for abrasion processing can be determined with high accuracy.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric mask used for irradiating a surface of an object to be processed with a laser beam to transfer a desired pattern, and a method and an apparatus for manufacturing the mask.

[0002]

2. Description of the Related Art FIG. 9 shows, for example, "Practical laser technology" (19
(April 1, 1991, published by Kyoritsu Shuppan Co., Ltd.), which is a cross-sectional view showing the structure of a conventional dielectric mask, and FIG. 11 is a diagram showing a manufacturing process of the dielectric mask in FIG. In the figure, 1 is, for example, quartz or fluorite (Ca
A transparent substrate made of F ₂ ), 2 is a first dielectric member having a high refractive index such as hafnium oxide (HfO ₂ ), aluminum oxide (AlO ₃ ), and 3 is silicon oxide It is a second dielectric member having a low refractive index such as (SiO ₂ ), and these first and second dielectric members 2, 3
Are alternately laminated on the transparent substrate 1 to form the dielectric multilayer thin film 4. Reference numeral 5 denotes a plurality of openings penetrating through the dielectric multilayer thin film 4 at predetermined positions to form a desired pattern. The transparent substrate 1, the dielectric multilayer thin film 4 and the plurality of openings 5 serve as a dielectric material. The mask 6 is configured.

Next, a conventional method for manufacturing a dielectric mask having the above structure will be described with reference to FIG. First, a photoresist 7 is formed on the transparent substrate 1 as shown in FIG. 11A, and then a photomask 8 is placed on the resist 7 as shown in FIG. Then, the resist 7 is irradiated with the electron beam 9 through the photomask 8. At this time, as shown in FIG. 11C, the photoresist 7 is altered only in the portion 7a irradiated with the electron beam 9.

Next, as shown in FIG. 11D, the remaining portion 7b other than the altered portion 7a is removed by etching,
A pattern is formed by leaving only the altered portion 7a. Then, after the dielectric multilayer thin film 4 is formed on the pattern formed by the altered portion 7a as shown in FIG. 11E, finally, the altered portion 7a and the dielectric material corresponding to this portion 7a are formed. A part of the multilayer thin film 4 is removed by etching, and a plurality of openings 5 are formed as shown in FIG.
By forming a desired pattern, the dielectric mask 6 is completed.

Since the energy unit price of an excimer laser or the like is very expensive, it is necessary to effectively use laser light. Therefore, as shown in FIG. 12, the laser beam is emitted from the laser oscillator 10 and passes through the dielectric mask 6 and passes through the dielectric mask 6 on the workpiece 14 like the part 12a of the laser beam 12 which is collimated by the lens 11. Laser light 1 reflected by the dielectric mask 6 without being focused on
As shown in FIG. 10, the remaining portion 12b of the high reflection mirror 1 is
The effective use is achieved by so-called multiple reflection in which the light is reflected at 5 and repeatedly reflected between the dielectric mask 6 and the mask.

[0006]

The conventional dielectric mask is constructed and manufactured as described above, and after the dielectric multilayer thin film 4 is formed, it is immersed in an etching solution together with the transparent substrate 1 for etching. Therefore, the laser resistance of the dielectric multilayer thin film 4 may be reduced to nearly half of the initial value, and as a result, the reflectance of the surface of the dielectric mask 6 may be reduced or the thin film may be damaged. Therefore, there is a problem that the function is deteriorated and the life is shortened.

Further, since the technique of multiple reflection for effectively utilizing the laser light by using the high-reflecting mirror 15 has a large number of repeated reflections, a slight reflectance loss greatly reduces the final light utilization efficiency. Therefore, it is desirable to have a reflectance as high as possible. However, there has been a problem that the improvement of reflectance has not been sufficiently achieved at present.

Further, the dielectric mask 6 is designed to allow the laser beam 12a to pass through the plurality of openings 5 arranged in a predetermined pattern, but the portion of the dielectric multilayer thin film 4 other than the openings 5 is formed. Also, as shown in FIG. 12, since about 1% of the laser beam 12c is transmitted, there is a problem in that the irradiation energy density on the processed surface cannot be set accurately and an error occurs in the processing accuracy.

The present invention has been made in order to solve the above problems, and a dielectric mask capable of preventing deterioration of function and shortening of life, improvement of reflectance and improvement of processing accuracy, and the mask. It is an object of the present invention to provide a manufacturing method and a manufacturing apparatus of.

[0010]

A dielectric mask according to claim 1 of the present invention is a transparent substrate capable of transmitting a laser beam, and is laminated on the surface of the transparent substrate to have a high reflectance for the laser beam. And a dielectric multilayer thin film formed by alternately laminating first and second dielectric members having different refractive indexes on the metal film, and a dielectric multilayer thin film and a metal film penetrating the dielectric multilayer thin film. And a plurality of openings formed and arranged in a predetermined pattern.

A dielectric mask according to a second aspect of the present invention is a transparent substrate capable of transmitting a laser beam, and a metal film laminated on the surface of the transparent substrate and having a high reflectance for the laser beam. And first and second dielectric multilayer thin films formed by alternately laminating first and second dielectric members having different refractive indexes on the front surface of the metal film and the back surface of the transparent substrate, respectively. 1. Dielectric multilayer thin film and metal film, and second
And a plurality of first and second openings that are formed so as to penetrate through the dielectric multilayer thin film and that are arranged in corresponding positions in a predetermined pattern.

A dielectric mask according to a third aspect of the present invention is a transparent substrate capable of transmitting a laser beam, an antireflection film laminated on the surface of the transparent substrate, and an antireflection film surface laminated. And a metal film having a lower laser resistance than the antireflection film and a high reflectance with respect to laser light, and first and second dielectric members having different refractive indexes are alternately laminated on the metal film. And a plurality of openings formed through the dielectric multilayer thin film and the metal film and arranged in a predetermined pattern.

The dielectric mask according to a fourth aspect of the present invention is a transparent substrate capable of transmitting a laser beam, and first and second antireflection layers respectively laminated on the front and back surfaces of the transparent substrate. A film, a metal film laminated on the surface of the first antireflection film and having a laser resistance lower than that of the first antireflection film and a high reflectance to laser light, and the metal film and the second antireflection film. First and second dielectric multilayer thin films formed by alternately laminating first and second dielectric members having different refractive indexes, a first dielectric multilayer thin film and a metal film, and a second dielectric multilayer thin film. A plurality of first and second openings are formed penetrating the dielectric multilayer thin film and are arranged in corresponding positions in a predetermined pattern.

A dielectric mask according to a fifth aspect of the present invention is a transparent substrate capable of transmitting a laser beam, a first antireflection film laminated on the surface of the transparent substrate, and a first antireflection film. A metal film laminated on the surface of the antireflection film and having a lower laser resistance than the first antireflection film and a high reflectance to laser light; and first and second dielectrics having different refractive indexes on the metal film. A dielectric multilayer thin film formed by alternately stacking members,
It is provided with a plurality of openings penetrating the dielectric multilayer thin film and the metal film and arranged in a predetermined pattern, and a second antireflection film laminated on the back surface of the transparent substrate.

The dielectric mask according to claim 6 of the present invention is the dielectric mask according to any one of claims 1 to 5, wherein the first dielectric member is hafnium oxide (HfO ₂ ) or aluminum oxide (Al ₂ O _3). ) And silicon oxide (SiO ₂ ) is used for the second dielectric member.

A dielectric mask according to a seventh aspect of the present invention is the dielectric mask according to any one of the first to fifth aspects, wherein the transparent substrate is synthetic quartz glass or fluorite and has a thickness of 3 mm to 1 mm.
It is formed to 3 mm.

The dielectric mask according to claim 8 of the present invention is the dielectric mask according to any one of claims 3 to 5, wherein the metal film is formed of aluminum, chromium, gold, silver, copper or rhodium. Is.

The dielectric mask according to claim 9 of the present invention is the dielectric mask according to claim 2 or 4, wherein the area of the second opening is larger than the area of the first opening by 5% to 20%. is there.

A dielectric mask according to a tenth aspect of the present invention is the dielectric mask according to any one of the first to ninth aspects, wherein the side surface of the transparent substrate is mirror-polished.

The eleventh aspect of the present invention is the dielectric mask according to the tenth aspect, wherein an antireflection film is formed on the mirror-polished side surface of the translucent substrate.

In the dielectric mask manufacturing apparatus according to the twelfth aspect of the present invention, the surface of the dielectric multilayer thin film on the transparent substrate is irradiated with laser light in a desired pattern through the mask original plate to perform ablation processing. A laser light source that performs the above, a transmitted light amount detection unit that detects the amount of transmitted light of the laser light that is transmitted through the processed surface, a predetermined laser intensity is sequentially calculated from the transmitted light amount that is detected by the transmitted light amount detection unit, and a laser light source And a laser intensity control means for controlling the laser intensity of the laser beam emitted from the device to a desired value.

According to a thirteenth aspect of the present invention, there is provided a method of manufacturing a dielectric mask, wherein the optical energy density of the first shot of the laser beam irradiated on the surface of the dielectric multilayer thin film on the transparent substrate is set to the dielectric. 100% to 20% of processing threshold of multilayer thin film
The light energy density after the second shot is set to 0% to about 80% to 100% of the processing threshold value and is set to a value equal to or lower than the processing threshold value of the transparent substrate and the antireflection film. The laser light is set and emitted.

According to a fourteenth aspect of the present invention, in the method of manufacturing a dielectric mask, the surface of the dielectric multilayer thin film on the transparent substrate is made of a material having a laser light absorption coefficient sufficiently larger than that of the dielectric multilayer thin film. A film is formed and laser light is irradiated.

The dielectric mask manufacturing method according to a fifteenth aspect of the present invention is the method according to the fourteenth aspect, wherein the protective film is formed by coating any one of polystyrene, an epoxy resist or polyamic acid.

[0025]

The metal film of the dielectric mask according to the first aspect of the present invention reflects the laser light which has passed through the dielectric multilayer thin film and reaches the surface thereof, and returns it to the laser light source side.

Further, the metal film of the dielectric mask according to the second aspect of the present invention reflects the laser light which has passed through the portion other than the opening and reaches the surface, and returns it to the laser light source side.

Further, the metal film of the dielectric mask according to claim 3 of the present invention reflects the laser light which has passed through the dielectric multilayer thin film and reaches the surface thereof, and returns it to the laser light source side.

Further, the metal film of the dielectric mask according to claim 4 of the present invention reflects the laser light which has passed through the portion other than the opening and reaches the surface, and returns it to the laser light source side.

Further, the second antireflection film of the dielectric mask according to the fifth aspect of the present invention cooperates with the first antireflection film to improve the transmission efficiency of the laser beam transmitted through the opening.

Further, the dielectric multilayer thin film composed of the first and second dielectric members of the dielectric mask according to claim 6 of the present invention reflects the laser light with which the surface is irradiated with high laser resistance and high reflectance. Then return to the laser light source side.

Further, in the transparent substrate of the dielectric mask according to the seventh aspect of the present invention, the warp is suppressed within several μm.

The metal film of the dielectric mask according to claim 8 of the present invention has lower laser resistance than the member forming the antireflection film, and the opening is formed without damaging the antireflection film when forming the opening by ablation. It

Further, the second opening of the dielectric mask according to claim 9 of the present invention is formed larger than the first opening, so as to cope with the spread of the laser beam on the back surface side of the transparent substrate. , Alleviate mechanical displacement on the front and back surfaces.

Further, the mirror-polished side surface of the transparent substrate of the dielectric mask according to claim 10 of the present invention is an optical boundary surface where the upper surface or the lower surface of the transparent substrate is in contact, and a part of the laser light is The scattered light that is reflected and stays in the transparent substrate is radiated to the outside.

In the eleventh aspect of the present invention, the antireflection film formed on the mirror-polished side surface of the transparent substrate of the dielectric mask is an optical boundary surface where the upper surface or the lower surface of the transparent substrate contacts. The scattered light that reflects a part of the laser light and stays in the transparent substrate is more efficiently radiated to the outside.

Further, the laser intensity control means of the dielectric mask manufacturing apparatus according to the twelfth aspect of the present invention sequentially calculates a predetermined laser intensity from the light amount of the laser beam transmitted through the processed surface to obtain a laser light source. The laser intensity of the laser light emitted from is controlled to a desired value.

According to a thirteenth aspect of the present invention, in the method of manufacturing a dielectric mask, the optical energy density of the first shot of the laser beam irradiated on the surface of the dielectric multilayer thin film on the transparent substrate is adjusted to the dielectric multilayer. 100% to 2 of thin film processing threshold
The optical energy density after the second shot is set to a value of 80% to 100% of the processing threshold and is set to a value equal to or lower than the processing threshold of the translucent substrate and the antireflection film. By setting and irradiating with laser light, an opening is formed by ablation without damaging the transparent substrate and the antireflection film.

According to a fourteenth aspect of the present invention, in the method of manufacturing a dielectric mask, the surface of the dielectric multilayer thin film on the transparent substrate is made of a protective film made of a material having a laser light absorption coefficient sufficiently larger than that of the dielectric multilayer thin film. By forming the film and irradiating it with laser light, scattered matter generated during ablation is prevented from adhering to the mask surface.

According to a fifteenth aspect of the present invention, in the method of manufacturing a dielectric mask, the surface of the dielectric multi-layered thin film on the transparent substrate has a polystyrene or epoxy resist having a laser light absorption coefficient sufficiently larger than that of the dielectric multi-layered thin film. Alternatively, by coating any of polyamic acid to form a protective film and irradiating with a laser beam, scattered matter generated during ablation is prevented from adhering to the mask surface.

[0040]

【Example】

Example 1. An embodiment of the present invention will be described below with reference to the drawings. 1 is a sectional view showing the structure of a dielectric mask according to a first embodiment of the present invention. In the figure, the same parts as those of the conventional dielectric mask shown in FIG. 9 are designated by the same reference numerals, and the description thereof will be omitted. 16 is, for example, aluminum oxide (Al ₂ O ₃ ) and magnesium fluoride (MgF ₂ ) on the transparent substrate 1.
Is an antireflection film formed by laminating optical thickness n · d = λ / 4 (where n is the refractive index, d is the film thickness, and λ is the wavelength used), and 17 is the antireflection film 16. It is a metal film laminated between the dielectric multilayer thin films 4 and has a lower laser resistance than aluminum oxide (Al ₂ O ₃ ) and magnesium fluoride (MgF ₂ ) forming the antireflection film 16 and has a laser reflectivity. High eg aluminum, chromium,
It is made of one of gold, silver, copper and rhodium. A plurality of openings 18 are formed by penetrating the dielectric multilayer thin film 4 and the metal film 17 by ablation, and a plurality of openings 19 are arranged in a predetermined pattern, and 19 are the transparent substrate 1, the antireflection film 16, the metal film 17, and the dielectric film. This is a dielectric mask composed of the body multilayer thin film 4 and the opening 18.

The dielectric mask 19 according to the first embodiment having the above-described structure has the antireflection film 16 and the metal film 17 formed on the transparent substrate 1, and the first antireflection film 16 and the metal film 17 having different refractive indexes are formed thereon.
And the second dielectric members 2 and 3 are alternately laminated to form the dielectric multilayer thin film 4, and the dielectric multilayer thin film 4 is formed.
And, the metal film 17 is completed by forming a desired pattern by providing a plurality of openings through predetermined positions by ablation processing.

As described above, according to the first embodiment, the metal film 17 having a high reflectance is formed between the antireflection film 16 and the dielectric multilayer thin film 4, and the laser which transmits through the dielectric multilayer thin film 4 is formed. Since the light is reflected and returned to the light source side, the transmitted laser light can be reduced to a negligible level, and the energy density for ablation processing can be set with high accuracy. It is possible to obtain the effect that the reflectance and the processing accuracy can be improved.

Example 2. In the first embodiment, the dielectric mask 19 having the antireflection film 16 on the transparent substrate 1 is used.
Although the case has been described, the same effect can be obtained by applying it to the one in which the dielectric multilayer thin film 4 is directly formed on the transparent substrate 1 without the antireflection film 16.

Example 3. FIG. 2 is a sectional view showing the structure of the dielectric mask according to the third embodiment of the present invention. In the figure, the same parts as those in the first embodiment shown in FIG. As in the antireflection film 16, the reference numeral 20 indicates, for example, aluminum oxide (Al ₂ O ₃ ) and magnesium fluoride (MgF ₂ ) with an optical film thickness of λ / 4.
Is a second antireflection film formed by laminating on the back surface of.

When the antireflection film is not provided as in the second embodiment, about 4% of reflection occurs on the transparent substrate 1. Therefore, the transmittance of the opening 18 is 4%.
Although the antireflection film 16 is provided for the purpose of raising it, in the third embodiment, since the second antireflection film 20 is also provided on the back surface of the transparent substrate 1, the antireflection effect is obtained. Is doubled and the transmission efficiency is further improved.

Example 4. Third Embodiment FIG. 3 is a sectional view showing the structure of a dielectric mask according to a fourth embodiment of the present invention. In the figure, the same parts as those in each of the above-described embodiments are designated by the same reference numerals and the description thereof is omitted. Reference numerals 21 and 22 are formed by laminating, for example, aluminum oxide (Al ₂ O ₃ ) and magnesium fluoride (MgF ₂ ) on the front and back surfaces of the transparent substrate 1 with an optical film thickness of λ / 4. The first and second antireflection films 23 are metal films laminated on the surface of the first antireflection film 21, and are made of aluminum oxide (Al ₂ O 3) forming the first and second antireflection films 21 and 22. ₃ ) and magnesium fluoride (M
laser resistance lower than gF ₂ ) and higher laser reflectivity, such as aluminum, chromium, gold, silver,
It is formed of either copper or rhodium.

Reference numerals 25 and 26 are first and second dielectrics formed by alternately laminating the first and second dielectric members 2 and 3 on the metal film 23 and the second antireflection film 22, respectively. The multilayer thin films 27 and 28 are formed by ablation penetrating the first and second dielectric multilayer thin films 25 and 26 and the metal film 23, respectively. In the first and second openings, the area of the second opening 28 is equal to that of the first opening 27.
5% to 20% larger than the area. Two
Reference numeral 9 denotes these translucent substrate 1, first and second antireflection films 21 and 22, metal film 23, first and second dielectric multilayer thin films 25 and 26, and first and second openings 27 and 2.
8 is a dielectric mask constituted by 8.

As described above, according to the fourth embodiment, the first and second dielectric multilayer thin films 2 are formed on the front and back surfaces of the transparent substrate 1.
Since 5 and 26 are formed, even if the mask surface of the dielectric mask 29, that is, the first dielectric multilayer thin film 25 is mechanically damaged in the course of handling and laser light leaks from that part, Since this can be shielded by the second dielectric multilayer thin film 26 on the back surface side, it is possible to prevent the processed surface from being adversely affected.

The area of the second opening 28 is smaller than that of the first opening 2.
Since it is formed 5% to 20% larger than the area of 7,
Even if the laser beam spreads on the back side due to the influence of the laser beam diffraction, the divergence angle of several milliradians, etc., or the mechanical displacement occurs on the front and back sides, it passes through the first opening 27. It is possible to reach the processed surface without interrupting the laser light. Furthermore, the translucent substrate 1 has a first surface on the front and the back surface.
Since the second dielectric multilayer thin films 25 and 26 are formed in a substantially symmetrical state, the film stress acting on the translucent substrate 1 is offset, so that the warpage is small and the reduction of the flatness is prevented. You can

Example 5. Fourth Embodiment FIG. 4 is a sectional view showing the structure of a dielectric mask according to a fifth embodiment of the present invention. In the figure, the same parts as those in the first embodiment shown in FIG. Reference numeral 30 denotes a translucent substrate formed of, for example, quartz, fluorite (CaF ₂ ) or the like, through which ultraviolet rays can pass, and its side surface is mirror-polished. Reference numeral 31 denotes an antireflection film formed on the mirror-polished side surface of the translucent substrate 30, and like the antireflection film 16, for example, aluminum oxide (Al ₂ O ₃ ) and magnesium fluoride (MgF ₂ ) are used as an optical film. It is formed by laminating with a thickness of λ / 4.

As described above, according to the fifth embodiment, since the side surface of the transparent substrate 30 is mirror-polished and the antireflection film 31 is formed on the side surface, the upper surface or the lower surface of the transparent substrate 30. As shown in FIG. 4, a part of the incident laser light is reflected at the optical boundary surface which is in contact with the scattered light generated in the transparent substrate 30 through the antireflection film 31 from the side surface efficiently. Therefore, it is possible to prevent the harmful effects such as the scattered light staying in the transparent substrate 30 and the optical loss causing the temperature of the transparent substrate 30 to rise.

Example 6. In the fifth embodiment, the case where the side surface of the transparent substrate 30 is mirror-polished and the antireflection film 31 is formed thereon has been described. However, when the side surface of the transparent substrate 30 is mirror-polished, the reflection is prevented. Even in the case where the prevention film 31 is not formed, the scattered light can be efficiently diffused from the mirror-polished side surface, so that the same effect as that of the fifth embodiment can be obtained.

Example 7. As described with reference to FIG. 10 in the related art, when a part of the laser light 12 is multiply reflected between the dielectric mask 6 and the high reflection mirror 15, it is important not to attenuate the quantity of the reflected laser light. . As a means for improving this optical characteristic, it is necessary to sufficiently control the flatness of the transparent substrate 1. On the other hand, the translucent substrate 1 should have a small thickness in terms of laser beam transmittance.
Warpage occurs due to the film stress of the film formed on the surface.
For example, the dimensions are 100 mm x 100 mm and the thickness is 1 mm.
When the dielectric multilayer film 4 having a film thickness of 8000 angstrom is vapor-deposited on the translucent substrate 1 having a thickness of up to 2 mm, warping of about 200 μm may occur at the end portion and the central portion, and thus when used as the dielectric mask 6. Influences the effective light utilization due to multiple reflections.

The light effective utilization factor of this multiple reflection is
The angle between the dielectric mask and the high reflection mirror 15 is several tens of μr.
Since the adjustment is made in ad units, it is necessary to suppress the warpage of the transparent substrate 1 to about several μm. Therefore, in this Example 7, synthetic quartz glass or fluorite (calcium fluoride), which is transparent to laser light and has laser resistance, is used as the material of the transparent substrate 1, and the thickness is set to 3 mm or more. Therefore, it was confirmed that the warp can be suppressed to several μm or less. On the other hand, the upper limit of the thickness was confirmed to be 13 mm as an allowable limit value for attenuation of transmitted laser light.

As described above, according to the seventh embodiment, the transparent substrate 1 is made of synthetic quartz glass or fluorite (calcium fluoride).
Since the thickness is formed to 3 mm to 13 mm by using, the transmittance of the transmitted laser light can be kept within the allowable limit and the warp can be suppressed within several μm, and multiple reflection with the high reflection mirror 15 is possible. Can be performed efficiently.

Example 8. FIG. 5 is a functional system diagram showing the structure of a dielectric mask manufacturing apparatus according to Embodiment 8 of the present invention. In the figure, 32 is a laser oscillator as a laser light source, 33 is a lens for making a laser beam emitted from the laser oscillator 32 into a parallel beam, 34 is a mask original plate having an opening 34a formed in a predetermined pattern, and 35 is this. A high-reflecting mirror that multiple-reflects the laser light reflected by the original mask plate 34, a bent mirror 36 that bends the laser light that has passed through the opening 34a of the original mask plate 34, and a dielectric mirror 37 that bends the laser light that has been bent by the bent mirror 37. A lens which irradiates and forms an image on the dielectric multilayer thin film 38a that constitutes the body mask 38, 39 is a transmitted light monitor as a transmitted light amount detecting means for detecting the amount of laser light transmitted through the processed surface, and 40 is A predetermined laser intensity is sequentially calculated from the transmitted light amount detected by the transmitted light monitor 39, and the laser oscillator 32 irradiates the laser light. The laser intensity of the laser beam is a laser intensity control device as a laser intensity control means for controlling to a desired value.

The dielectric mask manufacturing apparatus according to the eighth embodiment configured as described above has a function added to the ablation processing apparatus for performing ablation processing of polymer films, green sheets, etc. The mask can be processed.

Next, before explaining the operation of the dielectric mask manufacturing apparatus configured as described above, the relationship between the processing threshold value of the material for forming the dielectric multilayer thin film and the irradiation energy density will be described. Since a material having good laser resistance is selected for the dielectric mask, it is necessary to process the dielectric mask at a high energy density different from the processing of a polymer film or a green sheet in order to perform ablation processing by an excimer laser.

The excimer laser resistance of a general material for forming a dielectric multilayer thin film varies depending on the film forming method.
~ 3 J / cm ² (the central zone is approximately 2.5 J / cm ² , but there is a variation of ± 20% in the entire film),
This corresponds to the processing threshold of the material forming the dielectric multilayer thin film. Further, when ablation processing a dielectric multilayer thin film having a processing threshold value of ² to 3 J / cm ² , 80% to 100% of the original processing threshold value is applied after irradiation with an energy density higher than the processing threshold value. It was confirmed that processing should be performed with an energy density of about%.

Next, the operation of the dielectric mask manufacturing apparatus configured as described above will be described based on the flow shown in FIG. First, the dielectric multilayer thin film 38 in FIG.
a, the processing threshold of the dielectric multilayer thin film 38a is 100
When the laser beam having the energy density set to 100% to 200% is irradiated from the laser oscillator 32 (step S ₁ ) to form an image, the imaged portion is instantaneously damaged by the laser and a dielectric material is generated by the ablation phenomenon. Multilayer thin film 38a
The removal proceeds from the top layer to the bottom layer.

Then, the transmitted light amount of the laser light detected by the transmitted light monitor 39 is 10 which is a preset value.
While it is judged to be within the range of 100% (step S ₂ ), the laser intensity is controlled by the laser oscillator 32 from the laser oscillator 32 to 80% to 100% below the processing threshold of the dielectric multilayer thin film 38a.
The irradiation (Step S ₃₎ the laser beam of the set energy density of about%. As the removal progresses further, it is determined that the amount of transmitted light exceeds 10% of the predetermined value and is within 80% (step S
₄ ), the output of the laser oscillator 32 is controlled so that the amount of transmitted light approaches a predetermined value while sequentially comparing with the amount of transmitted laser light at the time of pre-irradiation, and laser light having an adjusted energy density is irradiated (step S ₅ ). When the amount of transmitted light is determined to have reached the predetermined value (Step S _6), the laser oscillator 32 is stopped processing is terminated.

As described above, according to the eighth embodiment, while the transmission monitor 39 constantly detects the transmitted light amount of the laser light transmitted through the processed surface of the dielectric mask 38, the laser light emitted according to the transmitted light amount. Since the energy density is adjusted, an opening can be formed in a desired pattern without damaging the translucent substrate or the antireflection film, and a function is added to a ready-made ablation processing device. Since the device is completed, it is possible to obtain a practically excellent effect that the device is inexpensive.

Example 9. FIG. 7 is a flow chart showing the operation of the dielectric mask manufacturing apparatus according to the ninth embodiment of the present invention. First, as in the case of Example 8 above, 100% to 200% of the processing threshold value of the dielectric multilayer thin film 38a was taken as the first shot on the dielectric multilayer thin film 38a in FIG.
Preferably irradiated (step S ₁₁₎ the laser beam energy density is set to 150% to 200%. Then 2
80% to 100% of the above processing threshold as a shot
Irradiation with laser light having an energy density set to a value lower than the processing threshold of the translucent substrate or the antireflection film (step S ₁₂ ). Then, after the second shot, a laser beam having an energy density corresponding to the number of shots is controlled by the laser intensity control device 40 and sequentially irradiated by a preset program, and the number of shots reaches a prescribed number ( step S ₃₎ then, the laser oscillator 32 is stopped it is determined that the processing has been completed.

As described above, according to the ninth embodiment, the second and subsequent shots are irradiated with the laser beam having the energy density corresponding to the number of shots by the preset program, and the processing is performed when the number of shots reaches the specified number. Since it is determined that the process is finished, the same effects as those of the above-described eighth embodiment can be exerted, and the transmitted light monitor 39 in the eighth embodiment is not necessary and the structure can be simplified. it can.

Example 10. FIG. 8 is a tenth embodiment of the present invention.
FIG. 3 is a cross-sectional view showing one step of the method of manufacturing the dielectric mask in FIG. 1, showing the case where the method is applied to the dielectric mask in the example 1 shown in FIG. In the figure, reference numeral 41 is a protective film formed on the surface of the dielectric mask 19, and is made of polystyrene, epoxy resist, or polyamic acid having an absorption coefficient of excimer laser light sufficiently higher than that of the dielectric multilayer thin film 4.
It is formed by applying any one of those baked at 00 ° C.

In the tenth embodiment, laser light is applied to the surface of the dielectric mask 19 with the protective film 41 formed as described above to perform ablation processing. After completion of the ablation, for example, polystyrene is removed with a solvent such as acetone, toluene, and benzene, the epoxy resist is removed with a solvent of tetramethylammonium hydroxide, and the polyamic acid is removed with a solvent of N-methyl-2-pyrrolidone.

As described above, according to the tenth embodiment, since the protective film 41 is previously formed on the surface of the dielectric multilayer thin film 4 when performing the ablation process by irradiating the laser beam, it occurs during the ablation process. It is possible to prevent the scattered matter from adhering to the surface of the mask and contaminating it, and to manufacture a dielectric mask having a high reflectance.

The high-reflectance dielectric mask is used for an ablation processing apparatus using an excimer laser, and it is desirable to manufacture it by the same apparatus. In the ablation process of polymer films and green sheets, these molecular structures are C-C bonds and C bonds.
It is necessary to supply energy for breaking the -H bond. C
Since the -C bond energy is 3.5 eV and the C-H bond energy is 4.3 eV, the excimer laser device uses an excimer laser device using KrF gas having a light energy 5 eV larger than these bond energies. . The light energy of the excimer laser using ArF gas is larger than the above binding energy at 6.4 eV, but it is restricted in using in vacuum, so the excimer using KrF gas that can be processed in the atmosphere is used. Laser devices are preferred.

[0069]

As described above, according to claim 1 of the present invention, a transparent substrate capable of transmitting a laser beam and a metal laminated on the surface of the transparent substrate and having a high reflectance for the laser beam. The first and second films having different refractive indexes on the film and the metal film, respectively.
Since the dielectric multilayer thin film formed by alternately laminating the dielectric members and the plurality of openings formed through the dielectric multilayer thin film and the metal film and arranged in a predetermined pattern are provided, It is possible to provide a dielectric mask capable of improving the above.

According to a second aspect of the present invention, a translucent substrate capable of transmitting a laser beam, a metal film laminated on the surface of the translucent substrate and having a high reflectance for the laser beam, respectively. First and second dielectric multilayer thin films formed by alternately stacking first and second dielectric members having different refractive indexes on the front surface of the metal film and the back surface of the transparent substrate, respectively. A plurality of first and second openings formed respectively penetrating the dielectric multilayer thin film and the metal film and the second dielectric multilayer thin film metal film and arranged in corresponding positions in a predetermined pattern. Therefore, it is possible to provide a dielectric mask which can improve the reflectance and does not adversely affect the processed surface even if the mask surface is damaged.

According to a third aspect of the present invention, a transparent substrate capable of transmitting a laser beam, an antireflection film laminated on the surface of the transparent substrate, and an antireflection film laminated on the surface of the antireflection film. A dielectric film formed by alternately laminating a metal film having a laser resistance lower than that of the film and having a high reflectance for laser light, and first and second dielectric members having different refractive indexes on the metal film. Since the multilayer thin film and the plurality of openings formed through the dielectric multilayer thin film and the metal film and arranged in a predetermined pattern are provided, it is possible to provide a dielectric mask capable of improving the reflectance.

According to a fourth aspect of the present invention, a transparent substrate capable of transmitting a laser beam, first and second antireflection films respectively laminated on the front and back surfaces of the transparent substrate, First
Of a metal film having a lower laser resistance than the first antireflection film and having a high reflectance with respect to laser light, and a different refractive index on the metal film and the second antireflection film. First and second dielectric multilayer thin films formed by alternately laminating first and second dielectric members, first dielectric multilayer thin film and metal film, and second
Since it has a plurality of first and second openings formed through the dielectric multi-layered thin film and arranged at corresponding positions in a predetermined pattern, it is possible to improve the reflectance. As a matter of course, it is possible to provide a dielectric mask that does not adversely affect the processed surface even if the mask surface is damaged.

According to a fifth aspect of the present invention, a transparent substrate capable of transmitting laser light, a first antireflection film laminated on the surface of the transparent substrate, and a first antireflection film. A metal film, which is laminated on the surface and has a lower laser resistance than the first antireflection film and a high reflectivity with respect to laser light, and the first and second dielectric members having different refractive indexes on the metal film are alternately arranged. And a plurality of openings formed in a predetermined pattern penetrating the dielectric multilayer thin film and the metal film, and a second dielectric multilayer thin film formed on the back surface of the transparent substrate. Since it is provided with the antireflection film, it is possible to provide a dielectric mask which can improve the reflectance as well as the transmittance of the aperture.

According to claim 6 of the present invention, in any one of claims 1 to 5, hafnium oxide (HfO ₂ ) or aluminum oxide (Al ₂ O ₃ ) is used for the first dielectric member. Silicon dioxide (S
Since each of iO ₂ ) is used, it is possible to provide a dielectric mask whose reflectance can be improved.

According to claim 7 of the present invention, in any one of claims 1 to 5, the translucent substrate is made of synthetic quartz glass or fluorite and has a thickness of 3 mm to 13 mm. It is possible to provide a dielectric mask which can improve the transmittance and can keep the transmittance within an allowable limit and minimize the warp.

According to claim 8 of the present invention, in any one of claims 3 to 5, the metal film is formed of any one of aluminum, chromium, gold, silver, copper and rhodium. It is possible to provide an improved dielectric mask.

According to claim 9 of the present invention, in claim 2 or 4, the area of the second opening is formed to be 5% to 20% larger than the area of the first opening. It is possible to provide a dielectric mask capable of reaching the processed surface without blocking the laser beam that passes through.

According to a tenth aspect of the present invention, in any one of the first to ninth aspects, since the side surface of the transparent substrate is mirror-polished, the scattered light generated in the transparent substrate is viewed from the side surface. It is possible to provide a dielectric mask that can diffuse and suppress the temperature rise of the transparent substrate.

According to the eleventh aspect of the present invention, in the tenth aspect, since the antireflection film is formed on the mirror-polished side surface of the transparent substrate, the scattered light generated in the transparent substrate is prevented. It is possible to provide a dielectric mask capable of efficiently radiating from the side surface and suppressing the temperature rise of the transparent substrate.

According to a twelfth aspect of the present invention, a laser light source for performing ablation processing by irradiating the surface of the dielectric multilayer thin film on the transparent substrate with laser light in a desired pattern through the mask original plate, Transmitted light amount detecting means for detecting the transmitted light amount of the laser light transmitted through the processed surface, and laser light emitted from the laser light source while sequentially calculating a predetermined laser intensity from the transmitted light amount detected by the transmitted light amount detecting means. And a laser intensity control means for controlling the laser intensity to a desired value. Therefore, a dielectric mask capable of forming openings in a desired pattern without damaging the translucent substrate or the antireflection film. A device can be provided.

According to a thirteenth aspect of the present invention, the method of manufacturing a dielectric mask according to the thirteenth aspect of the present invention is characterized in that the surface of the dielectric multi-layered thin film on the transparent substrate is irradiated with laser light. The light energy density of the first shot is set in the range of 100% to 200% of the processing threshold value of the dielectric multilayer thin film,
The light energy density after the second shot is reduced to about 80% to 100% of the processing threshold value, and is set to a value equal to or lower than the processing threshold value of the light-transmitting substrate and the antireflection film, and the laser light is irradiated. Thus, it is possible to provide a method for manufacturing a dielectric mask that can form an opening in a desired pattern without damaging the translucent substrate or the antireflection film.

According to a fourteenth aspect of the present invention, a protective film made of a material having a laser light absorption coefficient sufficiently larger than that of the dielectric multi-layered thin film is formed on the surface of the dielectric multi-layered thin film on the transparent substrate. Since the light irradiation is performed, it is possible to provide a method for manufacturing a dielectric mask capable of preventing the mask surface from being contaminated during ablation.

According to the fifteenth aspect of the present invention, in the fourteenth aspect, since the protective film is formed by applying any one of polystyrene, epoxy resist or polyamic acid, the mask surface is not contaminated during ablation. It is possible to provide a method of manufacturing a dielectric mask that can prevent the above.

[Brief description of drawings]

FIG. 1 is a sectional view showing a structure of a dielectric mask according to a first embodiment of the present invention.

FIG. 2 is a sectional view showing a structure of a dielectric mask according to a third embodiment of the present invention.

FIG. 3 is a sectional view showing a structure of a dielectric mask according to a fourth embodiment of the present invention.

FIG. 4 is a sectional view showing a structure of a dielectric mask according to a fifth embodiment of the present invention.

FIG. 5 is a functional system diagram showing the configuration of a dielectric mask manufacturing apparatus according to an eighth embodiment of the present invention.

FIG. 6 is a flowchart showing the operation of the dielectric mask manufacturing apparatus in FIG.

FIG. 7 is a flowchart showing the operation of the dielectric mask manufacturing apparatus according to the ninth embodiment of the present invention.

FIG. 8 is a cross-sectional view showing a step in the method of manufacturing a dielectric mask according to Example 10 of the present invention.

FIG. 9 is a cross-sectional view showing the structure of a conventional dielectric mask.

FIG. 10 is a diagram showing a state in which laser light is multiply reflected between a dielectric mask and a high-reflection mirror.

FIG. 11 is a diagram showing a manufacturing process of the dielectric mask in FIG.

FIG. 12 is a perspective view showing a configuration of a general ablation processing device.

[Explanation of symbols]

1, 30 translucent substrate, 2 first dielectric member, 3 second dielectric member, 4 dielectric multilayer thin film, 16, 31 antireflection film, 17, 23 metal film, 18 opening, 19, 2
9, 38 Dielectric mask, 20, 22 Second antireflection film, 21 First antireflection film, 25 First dielectric multilayer thin film, 26 Second dielectric multilayer thin film, 27 First opening, 28 Second aperture, 32 laser oscillator (laser light source), 34 mask original plate, 39 transmitted light monitor (transmitted light amount detection means), 40 laser intensity control device (laser intensity control means).

Front page continuation (72) Inventor Gen Nakatani 8-1-1 Tsukaguchihonmachi, Amagasaki City Mitsubishi Electric Corporation Itami Works (72) Inventor Atsushi Sugitate 8-1-1 Tsukaguchihonmachi, Amagasaki Mitsubishi Electric Itami Co., Ltd. In-house (72) Inventor Takashi Eura 8-1-1 Tsukaguchi-honmachi, Amagasaki City Mitsubishi Electric Co., Ltd. Itami Factory (72) Inventor Toshinori Yagi 8-1-1 Tsukaguchi-honmachi, Amagasaki Mitsubishi Electric Corporation Production Technology Research In-house (72) Inventor Nobuyuki Sumoto 8-1-1 Tsukaguchi-honmachi, Amagasaki City Mitsubishi Electric Corporation Production Technology Laboratory (72) Inventor Keiko Ito 8-1-1 Tsukaguchi-honmachi, Amagasaki Mitsubishi Electric Corporation Production Technology In the laboratory

Claims (15)

[Claims] 1. A transparent substrate capable of transmitting laser light, a metal film laminated on the surface of the transparent substrate and having a high reflectance for the laser light, and a metal film having a refractive index on the metal film. Dielectric multilayer thin film formed by alternately stacking different first and second dielectric members, and a plurality of openings formed in a predetermined pattern penetrating the dielectric multilayer thin film and the metal film And a dielectric mask. 2. A transparent substrate capable of transmitting a laser beam, a metal film laminated on the surface of the transparent substrate and having a high reflectance for the laser beam, the surface of the metal film and the transparent film. On the back surface of the flexible substrate
Firstly formed by alternately laminating dielectric members of
And the second dielectric multilayer thin film, the first dielectric multilayer thin film and the metal film, and the second dielectric multilayer thin film, respectively. A dielectric mask having a plurality of first and second openings. 3. A transparent substrate capable of transmitting a laser beam, an antireflection film laminated on the surface of the transparent substrate, a laser resistance lower than that of the antireflection film laminated on the surface of the antireflection film, and A metal film having a high reflectance for the laser beam; and a dielectric multilayer thin film formed by alternately laminating first and second dielectric members having different refractive indexes on the metal film, A dielectric mask, comprising: a dielectric multilayer thin film; and a plurality of openings formed through a metal film and arranged in a predetermined pattern. 4. A transparent substrate capable of transmitting laser light, first and second antireflection films respectively laminated on the front and back surfaces of the transparent substrate, and on the surface of the first antireflection film. A laminated metal film having a lower laser resistance than the first antireflection film and a high reflectance with respect to the laser light, and the first and the second antireflection films having different refractive indexes on the metal film and the second antireflection film, respectively. First and second dielectric multilayer thin films formed by alternately stacking second dielectric members, the first dielectric multilayer thin film and the metal film, and the second dielectric multilayer thin film, respectively. A dielectric mask, comprising: a plurality of first and second openings that are formed so as to penetrate therethrough and that are arranged in corresponding positions in a predetermined pattern. 5. A transparent substrate capable of transmitting a laser beam, a first antireflection film laminated on the surface of the transparent substrate, and a first antireflection film laminated on the surface of the first antireflection film. A metal film having a lower laser resistance than the antireflection film and a high reflectance with respect to the laser beam, and first and second dielectric members having different refractive indexes are alternately laminated on the metal film. The dielectric multilayer thin film, a plurality of openings penetrating the dielectric multilayer thin film and the metal film and arranged in a predetermined pattern, and a second laminated on the back surface of the transparent substrate.
And an anti-reflection film for the dielectric mask. 6. The first dielectric member is made of hafnium oxide (HfO ₂ ) or aluminum oxide (Al ₂ O ₃ ).
6. The dielectric mask according to claim 1, wherein silicon oxide (SiO ₂ ) is used for each of the second dielectric members. 7. The dielectric mask according to claim 1, wherein the translucent substrate is made of synthetic quartz glass or fluorite and has a thickness of 3 mm to 13 mm. 8. The metal film is made of aluminum, chromium,
The dielectric mask according to claim 3, wherein the dielectric mask is formed of any one of gold, silver, copper, and rhodium. 9. The dielectric mask according to claim 2, wherein the area of the second opening is larger than the area of the first opening by 5% to 20%. 10. The dielectric mask according to claim 1, wherein the side surface of the transparent substrate is mirror-polished. 11. An antireflection film is formed on a mirror-polished side surface of a translucent substrate.
The dielectric mask described. 12. A laser light source for performing ablation processing by irradiating a laser beam on a surface of a dielectric multilayer thin film on a transparent substrate in a desired pattern through a mask original plate, and the laser transmitted through a processed surface. Transmitted light amount detecting means for detecting the transmitted light amount of light, and a predetermined laser intensity is sequentially calculated from the transmitted light amount detected by the transmitted light amount detecting means, and the laser intensity of the laser light emitted from the laser light source is a desired value. An apparatus for manufacturing a dielectric mask, comprising: 13. The optical energy density of the first shot of the laser beam applied to the surface of the dielectric multilayer thin film on the transparent substrate is 100% to 2% of the processing threshold of the dielectric multilayer thin film.
The light energy density after the second shot is set to about 80% to 100% of the processing threshold, and the light energy density after the second shot is set to the range below the processing threshold of the transparent substrate and the antireflection film. A method of manufacturing a dielectric mask, characterized in that the laser beam is irradiated by setting the value to a value. 14. A protective film made of a material having a laser light absorption coefficient sufficiently larger than that of the dielectric multi-layered thin film is formed on the surface of the dielectric multi-layered thin film on the translucent substrate, and the laser beam is irradiated. A method for manufacturing a dielectric mask, comprising: 15. The method of manufacturing a dielectric mask according to claim 14, wherein the protective film is formed by coating any one of polystyrene, an epoxy-based resist and polyamic acid.