JPH07325329A - Organic superlattice material, its production and element using that material - Google Patents

Abstract

PURPOSE:To obtain a transistor having high carrier mobility and to obtain an optical device excellent in nonlinear optical characteristics by forming at least two kinds of org. thin films and incorporating p-conjugate straight chain oligomers into the base skeleton of molecules which constitute these thin films. CONSTITUTION:This org. material has a structure of at least two layers produced by laminating at least two kinds of org. thin films each having 0.5-100mm film thickness. These org. thin films of at least two kinds consist of an org. superlattice material containing p-conjugate straight chain oligomers in the base skeleton of the molecules which constitute the thin film. The laminar film has a conductive band 1 and a valance band 2. The org. superlattice having such a quantum well like electron state can be produced by vacuum vapor deposition method such as org. molecular beam vapor deposition, and org. ion cluster beam vapor deposition, or electrolytic polymn. method or Langmuir- Blodgett method.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an organic superlattice material used as a non-linear optical material or an electronic material, a method for producing the same, and an electronic device and an optical device using the material.

[0002]

2. Description of the Related Art Electronic devices having high functionality such as ultra-high speed transistors, optoelectronic devices such as lasers, and optical control devices for modulating and switching light require new materials having the required material functions. . It is widely recognized that a superlattice material, which is a material that does not exist in nature, is effective as the new material, and the material is being developed mainly for compound semiconductors.

The superlattice material is a material in which new physical properties are exhibited by stacking thin films whose physical properties change layer by layer in multiple layers, such as quantum well lasers and super-wavelength controlled wavelengths. High speed transistors and the like have been realized by using this material. For the principles of physical properties manifestation in these superlattice materials, the concept of basic design, and necessary fabrication techniques, see "Physics and Applications of Semiconductor Superlattices", pages 1 to 129 (edited by the Physical Society of Japan, published by Baifukan (1984). )It is described in.

The basis of the phenomenon manifested by forming a material into a superlattice is the energy level by confining the electronic states, which usually represent electrons and holes, which are spread in three dimensions, into a quantum well, which is a potential artificially created. Resonance effect between quantum quantization and quantum wells. Also,
As the fabrication technology, the film thickness is controlled by the thickness of the order of atoms and molecules, and a crystal structure without disorder and an elaborate interface of different materials are required. Therefore, molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD) is used. ) Is commonly used.

However, since a superlattice material using an ordinary compound semiconductor is limited in its constituent materials and physical properties are limited in design, an organic superlattice using an organic compound as a raw material is a completely new material system. Lattice materials have been proposed. It is considered that the possibility of obtaining a new superlattice material is expanded by using an organic compound as its constituent material. Research and development on this organic superlattice is just beginning, and there are very few examples of its realization.

FIG. 16 is a cross-sectional view of a conventional example of an actually manufactured organic superlattice. This is produced by an organic molecular beam deposition method using a typical planar π-conjugated compound, a perylene derivative and a naphthalene derivative as raw materials. "Applied Physics Letters" 56th
Volume 7, page 674 (Published by American Physical Society (1989)
)), 70 in FIG. 16 is a quartz substrate layer which is a substrate,
Reference numeral 71 is a perylene derivative thin film layer, and 72 is a naphthalene derivative thin film layer. It is reported that the quantum effect is exhibited in the material because the absorption spectrum is slightly shifted. In addition, Ishitani et al. Have prepared and reported an organic superlattice material composed of hydrogenated tetraphenylporphyrin and zinc tetraphenylporphyrin, which are planar π-conjugated compounds. (Journal of Applied Physics, Vol. 73, No. 6, pp. 2826 (19
1993)).

[0007]

The conventional organic superlattice material is constructed as described above, for example, and the shift of the absorption spectrum is also observed, but the effect of greatly improving the physical properties is observed. There was a problem that it did not exist. Originally, the change in physical properties expected to be realized by the realization of organic superlattices, for example, the improvement in electrical conductivity and the increase in nonlinear optical constants has not been observed. On the other hand, the optimal material design is not done.

At present, as a method for producing an organic superlattice, the organic molecular beam deposition method is most commonly used, but this production method is still in the research and development stage, and applicable materials are available. Limited. Therefore,
At present, a superlattice is made of a combination of materials capable of molecular beam evaporation, and it is a multilayer thin film, but it is not the original superlattice material that exhibits new physical properties at present. As described above, in the conventional organic superlattice material, the constituent materials are not selected based on the material design for manufacturing the superlattice. That is, it is necessary to design a material that can freely set the physical properties of constituent materials required for superlattice material design, such as band structure, dielectric constant, refractive index, conductivity, electron affinity, and ionization potential. was there.

Also, in terms of the thin film structure, since the crystallinity of the material is low, the electronic state does not spread in one layer, or the electronic excitation has no coherence based on the periodic order. was there. In a superlattice material, in order to efficiently confine an electron or hole in a quantum well and cause resonance between wells, it is necessary that the electronic state has a spatial spread. is there. In order to develop such an electronic state, it is necessary that the electronic states of the individual molecules sufficiently interact with each other to form a band structure, and the spatial structure is periodic long-range order, that is, a crystal structure. Need sex.

Further, there is a problem in that a smooth interface between different kinds of materials necessary for forming a quantum well and inducing resonance between wells and having a sharp change in the physical property value is not formed. It was For that purpose, the material forming the interface is crystalline, and the matching of the lattice constant is required between them.

Further, there is a problem that the produced organic superlattice has poor structural stability.

Further, no high speed transistor using an organic superlattice material has been obtained at present.

Furthermore, no optical modulator using an organic superlattice material is available at present.

Further, at present, no optical switching element using an organic superlattice material, capable of high-speed switching and having a large switch ratio, has been obtained at present.

Further, at present, no logic device using an organic superlattice material, which is capable of high-speed response and exhibits bistability with respect to the intensity of input light, has been obtained at present.

[0016]

The first invention of the present invention is directed to an organic material comprising at least two layers of at least two kinds of organic thin films having a thickness of 0.5 to 100 mm, and the at least 2 In any of the seed organic thin films, the present invention relates to an organic superlattice material in which the basic skeleton of the molecule forming the thin film contains a π-conjugated linear oligomer.

In a second aspect of the present invention, the repeating unit of the π-conjugated linear oligomer has the general formula (I):

[0018]

[Chemical 17] (In the formula, X is S, N—H, N—CH ₃ , Se or O,
R ¹ and R ² are the same or different and each is H and has 1 carbon atom.
To an alkyl group having 3 to 3 or an alkoxy group having 1 to 3 carbon atoms)
One or more aromatic molecular groups (I) represented by the general formula (II):

[0019]

[Chemical 18] (In the formula, Y is S, -CH = CH-, N-H, N-C.
H ₃ , Se or O, R ³ , R ⁴ are the same or different,
H, an alkyl group having 1 to 3 carbon atoms or 1 carbon atom, respectively
To an alkoxy group) to an aromatic molecular group (II)
One or more of, or the general formula (III):

[0020]

[Chemical 19] (In the formula, Z is N or C—H, R ⁵ , R ⁶ , and R ⁷ are the same or different, and each is H, an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms). The aromatic molecular group (III) is composed of one kind or two or more kinds, and the molecular chain end of the oligomer is H, an alkyl group having 1 to 3 carbon atoms, an alkoxy group having 1 to 3 carbon atoms, an azide group, a phenyl group,

[0021]

[Chemical 20] Or, those that are two of them.

In a third aspect of the present invention, the π-conjugated linear oligomer has the general formula (I):

[0023]

[Chemical 21] (In the formula, X is S, N—H, N—CH ₃ , Se or O,
R ¹ and R ² are the same or different and each is H and has 1 carbon atom.
To an alkyl group having 3 to 3 or an alkoxy group having 1 to 3 carbon atoms)
One or more aromatic molecular groups (I) represented by the general formula (II):

[0024]

[Chemical formula 22] (Wherein, Y is S, N-H, N- CH 3, Se or O,
R ³ and R ⁴ are the same or different and each is H and has 1 carbon atom.
To an alkyl group having 3 to 3 or an alkoxy group having 1 to 3 carbon atoms)
One or more aromatic molecular groups (II) represented by or general formula (III):

[0025]

[Chemical formula 23] (In the formula, Z is N or C—H, R ⁵ , R ⁶ , and R ⁷ are the same or different, and each is H, an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms). The present invention relates to an alternating copolymer composed of one or two or more kinds of aromatic molecular groups (III).

In a fourth aspect of the present invention, the π-conjugated linear oligomer has the general formula (I):

[0027]

[Chemical formula 24] (In the formula, X is S, N—H, N—CH ₃ , Se or O,
R ¹ and R ² are the same or different and each is H and has 1 carbon atom.
To an alkyl group having 3 to 3 or an alkoxy group having 1 to 3 carbon atoms)
One or more aromatic molecular groups (I) represented by the general formula (II):

[0028]

[Chemical 25] (Wherein, Y is S, N-H, N- CH 3, Se or O,
R ³ and R ⁴ are the same or different and each is H and has 1 carbon atom.
To an alkyl group having 3 to 3 or an alkoxy group having 1 to 3 carbon atoms)
One or more aromatic molecular groups (II) represented by or general formula (III):

[0029]

[Chemical formula 26] (In the formula, Z is N or C—H, R ⁵ , R ⁶ , and R ⁷ are the same or different, and each is H, an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms). The present invention relates to a block copolymer composed of one or two or more kinds of aromatic molecular groups (III).

In a fifth aspect of the present invention, the π-conjugated linear oligomer has the general formula (I):

[0031]

[Chemical 27] (In the formula, X is S, N—H, N—CH ₃ , Se or O,
R ¹ and R ² are the same or different and each is H and has 1 carbon atom.
To an alkyl group having 3 to 3 or an alkoxy group having 1 to 3 carbon atoms)
One or more aromatic molecular groups (I) represented by the general formula (II):

[0032]

[Chemical 28] (Wherein, Y is S, N-H, N- CH 3, Se or O,
R ³ and R ⁴ are the same or different and each is H and has 1 carbon atom.
To an alkyl group having 3 to 3 or an alkoxy group having 1 to 3 carbon atoms)
One or more aromatic molecular groups (II) represented by or general formula (III):

[0033]

[Chemical 29] (In the formula, Z is N or C—H, R ⁵ , R ⁶ , and R ⁷ are the same or different, and each is H, an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms). The basic thin film comprising a single aromatic molecular group of one or more of the aromatic molecular group (III) and constituting an organic superlattice is a π-conjugated linear oligomer of the single aromatic molecular group. Of 2
The present invention relates to a mixed thin film composed of one or more kinds, which is constituted by laminating one or two or more thin films having different composition ratios with the basic thin film.

In a sixth aspect of the present invention, the π-conjugated linear oligomer has the general formula (I):

[0035]

[Chemical 30] (In the formula, X is S, N—H, N—CH ₃ , Se or O,
R ¹ and R ² are the same or different and each is H and has 1 carbon atom.
To an alkyl group having 3 to 3 or an alkoxy group having 1 to 3 carbon atoms)
One or more aromatic molecular groups (I) represented by the general formula (II):

[0036]

[Chemical 31] (Wherein, Y is S, N-H, N- CH 3, Se or O,
R ³ and R ⁴ are the same or different and each is H and has 1 carbon atom.
To an alkyl group having 3 to 3 or an alkoxy group having 1 to 3 carbon atoms)
One or more aromatic molecular groups (II) represented by or general formula (III):

[0037]

[Chemical 32] (In the formula, Z is N or C—H, R ⁵ , R ⁶ , and R ⁷ are the same or different, and each is H, an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms). A basic thin film that is composed of different aromatic molecular groups of the aromatic compound (III) and constitutes an organic superlattice is a mixed thin film that is composed of two or more kinds of π-conjugated linear oligomers of the different aromatic molecular groups. The present invention relates to a structure formed by stacking one or more thin films having different composition ratios with the basic thin film.

The seventh invention of the present invention relates to the organic thin film layer, wherein each of the organic thin film layers is composed of a crystal of a π-conjugated linear oligomer.

The eighth invention of the present invention relates to the above-mentioned two or more kinds of organic thin film layers, in which the difference in lattice constant between the organic thin film layers having different compositions is within 10%.

In a ninth aspect of the present invention, the organic thin film layer has a high molecular weight by polymerizing or cross-linking between the molecules of the π-conjugated linear oligomer in the organic thin film layer. Regarding

In a tenth aspect of the present invention, the organic thin film layer induces a chemical reaction in the π-conjugated linear oligomer existing at the interface of the organic thin film layer, and the π-conjugated linear oligomer between thin films is formed. It relates to a polymer of an oligomer.

An eleventh aspect of the present invention is to irradiate the organic thin film layer with light, radiation or an electron beam from the outside,
The present invention relates to inducing a photochemical reaction to polymerize or crosslink the molecules in the organic thin film layer to increase the molecular weight.

A twelfth aspect of the present invention is to irradiate the organic thin film layer with light, radiation or an electron beam from the outside,
Inducing a photochemical reaction to polymerize the π-conjugated linear oligomer between or within the thin films.

The thirteenth invention of the present invention is as follows.
The present invention relates to a high speed transistor composed of a substrate and the organic superlattice material.

The fourteenth invention of the present invention is as follows.
The present invention relates to a light modulation element composed of a substrate and the organic superlattice material.

Further, the fifteenth invention of the present invention is as follows:
The present invention relates to an optical switching element including a substrate and the organic superlattice.

The sixteenth invention of the present invention is as follows:
It relates to an optical bistable device comprising a substrate and the organic superlattice material.

[0048]

EXAMPLES As the π-conjugated linear oligomer material which is the basis of the organic superlattice material in the first invention of the present invention, 1 of the general formula (I), (II) or (III) is used.
It may be composed of one kind or two or more kinds of aromatic molecular groups. The number of the molecular groups constituting the linear oligomer is not particularly limited, but it is a solid state at room temperature,
From the viewpoint of having a sufficient π-conjugated electron spread,
Three or more are preferable. Further, it is desirable that the structure of the thin film to be produced be controlled, that two or more kinds of π-conjugated linear oligomers constituting the mixed thin film have the same spatial shape and size, and the raw materials From the viewpoint that, when the number of the molecular groups increases in the synthesis of, the molecular weight dispersion is likely to occur and the separation is not easy, the number of molecular groups of the π-conjugated linear oligomer used is preferably 10 or less.

Further, considering synthetic ease, sufficient spread of π-conjugated electrons, easy handling of materials at room temperature, structural controllability during thin film production, etc., 5 to 8 of the above-mentioned molecules are taken into consideration. A π-conjugated linear oligomer having a group number is preferable.

A typical example is shown below.

For example

[0052]

[Chemical 33] A hexamer of oligothiophene (compound (1)) in which a thiophene ring represented by

[0053]

[Chemical 34] FIG. 1 shows an energy level diagram in the film thickness direction of a laminated thin film composed of an oligophenylene hexamer (compound (2)) having a benzene ring linearly bonded thereto. In FIG. 1, 1 is a conduction band and 2 is a valence band. It can be seen from FIG. 1 that this laminated film is a type 1 superlattice. Regarding the classification of this superlattice, "Physics and applications of semiconductor superlattices" 2
~ 4 pages (edited by the Physics Society of Japan, published by Baifukan (1984))
It is described in. The potential felt by an electron in the conduction band or a hole in the valence band of the superlattice system is approximately represented by a well-type potential. In this example, oligothiophene having a low energy at the bottom of the conduction band is used as a well, and oligothiophene having a high energy is used as a well. Phenylene becomes a barrier. The height of the barrier corresponds to the discontinuity of the energy band in the conduction band and the valence band at the hetero interface between the two semiconductors. If the thickness of the well, oligothiophene, is sufficiently larger than the thickness of the barrier, oligophenylene, the electrons cannot pass through the barrier and are localized in the vicinity of the well. As a result, the electrons are confined in the oligothiophene layer, and the densities of states are quantized because the electrons are bound in a specific space. As a result, a quantum effect, which cannot be seen in the bulk case, appears.

The organic superlattice having the quantum well-like electronic state shown in FIG. 1 is mainly used for vacuum vapor deposition such as organic molecular beam vapor deposition and organic ion cluster beam vapor deposition, electrolytic polymerization,
Langmuir-Blo
dgett) method or the like.

As the substrate in the present invention, a quartz plate, an amorphous substrate such as a slide glass, potassium bromide,
Examples thereof include alkali halide single crystal plates such as sodium chloride and potassium chloride, silicon wafers and the like, and plates obtained by vapor-depositing metals such as gold, silver and aluminum on these substrates.

The thickness of the organic thin film in the present invention is 0.5.
˜100 nm, preferably 0.5 to 10 nm, and if the film thickness is less than 0.5 nm, it cannot be manufactured because it is smaller than the size of the molecule, and if it exceeds 100 nm, specific physical properties due to thinning tend not to appear. is there.

It is preferable to use at least two kinds of organic thin films in the present invention, and it is more preferable to use two to four kinds in view of novel physical properties.

The organic thin film in the present invention is preferably laminated in at least two layers, and it is more preferable to use 2 to 50 layers from the viewpoint of effectively exhibiting the characteristics.

In the present invention, since the π-conjugated linear oligomer is used as the constituent molecule of the superlattice material, it is possible to suppress the deterioration of the characteristics due to the dispersion of the molecular weight which occurs when the polymer is used, and various The material properties of the basic constituent film can be designed by the combination of the materials described in 1. above, which enables material design and manufacture of an organic superlattice that effectively utilizes the effect of π electrons.

The π-conjugated linear oligomer according to the second aspect of the present invention is an aromatic molecular group (I) or (II) represented by the above general formula (I), (II) or (III).
Alternatively, (III) can be preferably used.

By using a π-conjugated linear oligomer composed of the aromatic molecular group represented by the general formula (I), (II) or (III) as the basic skeleton of the superlattice material, a thin film material The band structure, conductivity, permittivity, refractive index, electron affinity, ionization potential, etc., which are the basic physical properties of, can be freely controlled, and it is possible to design the material of the organic superlattice wider than before.

Preferred specific examples of the general formula (I) are, for example,

[0063]

[Chemical 35] And so on.

Preferred specific examples of the general formula (II) are, for example,

[0065]

[Chemical 36] And so on.

Preferred specific examples of the general formula (III) are, for example,

[0067]

[Chemical 37] And so on.

In the third and fourth aspects of the present invention, among the aromatic groups represented by the general formula (I), (II) or (III), the molecular group constituting the π-conjugated linear oligomer is By using an alternating copolymer or a block copolymer consisting of the two components described above, it becomes possible to control the basic physical properties that cannot be obtained by a random copolymer, such as the physical properties of the material being uniform over the entire molecule. This enables the material design of the organic superlattice.

Specific preferred examples of the alternating copolymer are:

[0070]

[Chemical 38] And so on.

In the fifth and sixth aspects of the present invention, the basic skeleton of the π-conjugated linear oligomer has a basic aromatic moiety of the general formula (I), (II) or (III). Is a single component, or a homo-oligomer in which an alkyl group or an alkoxy group is bonded to a single component is used, or a co-oligomer of different components is used, and the basic constituent thin film is a homo-oligomer or a co-oligomer of two or more types. It is a mixed film, and by alternately stacking these, you can freely control the physical properties of the thin film such as band structure, conductivity, dielectric constant, refractive index, electron affinity, ionization potential, etc. Can be widely possible.

In addition, the mixed thin film using two or more kinds of the above-mentioned single component oligomers has, for example, a difference in relative energy between the valence band and the conduction band.

[0073]

[Chemical Formula 39] Is preferred.

Further, when a plurality of thin films having different composition ratios are laminated, a combination of, for example, the above compounds of 80:20 and 20:80 is preferable from the viewpoint of effectively forming a well layer.

In the seventh aspect of the present invention, since the π-conjugated linear oligomer is used as a basic molecule having the organic thin film as a constituent molecule and its structure is made crystalline, an electronic state in the organic thin film is obtained. Are spread, the quantum confinement effect can be effectively induced when the superlattice structure is produced, and the effect of the superlattice structure can be effectively exhibited.

In order to obtain the above-mentioned crystal, it is preferable to form a film by a dry process such as a molecular beam vapor deposition method or an ion beam vapor deposition method from the viewpoint that a sharp composition change can be obtained.

In the eighth aspect of the present invention, the difference in the lattice constant of the interface between different materials of the basic constituent thin film is within 10%, so that epitaxial growth and strained epitaxial growth at the interface are possible and the phase matching of the lattice is achieved. By taking the above, it is possible to fabricate an organic superlattice that does not generate voids in the spatial structure of the material and does not generate a large barrier in the band structure of electrons.

In the ninth aspect of the present invention, intermolecular polymerization of the π-conjugated linear oligomer may be achieved by attaching a photoactive substituent to the terminal of the molecule from the viewpoint of polymerization by a photochemical reaction. In order to crosslink, from the viewpoint of crosslinking by photochemical reaction, a reactive group may be bonded in the molecular chain. The molecular weight of the polymer after the polymerization or crosslinking is 200 from the viewpoint of the quantum effect expression and the stability of the material.
1 to 10,000 is preferable.

In the tenth aspect of the present invention, it is preferable to cause the oligomer to undergo a chemical reaction to polymerize to make the interface of different kinds of thin films continuous in view of stabilizing the superlattice structure as compared with a single layer. Later molecular weight is 200-1000
It is preferably 0 from the viewpoint of stabilizing the material.

In the eleventh aspect of the present invention, the method of polymerizing or crosslinking may be to irradiate the oligomer with light, radiation or electron beam, but the irradiation energy intensity is 1 megawatt or less is preferable.

In the ninth and eleventh inventions,
Basic π-conjugated linear oligomer in a thin film is irradiated with light, radiation or electron beam from the outside to induce a chemical reaction in the molecule and polymerize or crosslink to form a broader band structure. Also, the stability of the material can be increased.

In the twelfth aspect of the present invention, the method for polymerizing the oligomer may be irradiation with light, radiation or an electron beam, but the irradiation energy intensity is preferably 1 megawatt or less from the viewpoint of not inducing a morphological change in the material. .

In the tenth and twelfth aspects of the present invention, the π-conjugated linear oligomer at the heterogeneous thin film interface of the basic constituent thin film is irradiated with light, radiation or an electron beam from the outside to allow the heterogeneous molecules at the interface to be separated. By inducing and polymerizing a chemical reaction, the band structure at the interface between different thin films becomes continuous, and the stability of the material can be improved.

In the thirteenth invention of the present invention,
The well layer has a thickness of 5 to 10 nm, and the barrier layer has a thickness of 10 to 1
It is preferable to use a thin film in which about 10 layers are alternately laminated at 00 nm.

A high-speed transistor is manufactured by using the above organic superlattice material, and it is possible to improve the carrier mobility which is a device characteristic of the high-speed transistor.

In the fourteenth invention of the present invention,
Since the superlattice material is used for the optical waveguide layer, it is preferable to select a compound having a small absorption in the wavelength region of the guided light and a small optical scattering and thinning it.

An optical modulator is manufactured by using the organic superlattice material, and the device characteristics such as the modulation speed and the modulation ratio can be improved.

In the fifteenth invention of the present invention,
Since a superlattice material is used for the optical waveguide layer, it is preferable to select a compound having a small absorption in the wavelength region of the guided light and a small optical scattering and thinning it.

An optical switch is manufactured using the organic superlattice material, and the device characteristics such as the modulation speed and the switching ratio can be improved.

In the sixteenth invention of the present invention,
Since bistable characteristics can be obtained by external laser irradiation, it is preferable to select a material that does not absorb in the irradiation laser wavelength range and has little optical scattering, and make it thin.

An optical bistable element is manufactured using the above organic superlattice material, and it is possible to reduce the threshold light intensity value and improve the bistable characteristic which are the device characteristics.

Next, the organic superlattice material of the present invention, the method for producing the same, and the device using the material will be specifically described based on Examples, but the present invention is not limited thereto.

[Example 1] (Preparation of organic alternating laminated film)

[0094]

[Chemical 40] A compound (1) represented by

[0095]

[Chemical 41] The powder of the compound (2) represented by is put in another quartz crucible and set in a heating cell in a vacuum layer.
A 0 mm × 40 mm × 1 mm synthetic quartz plate was placed in the vacuum layer and vacuumed. After the degree of vacuum reached 10 ^-9 Torr, the two cells were alternately heated to 1
Compound (2) was added to 1 at a deposition rate of A / min or less.
Compound (1) of 5 nm was deposited on the substrate to a film thickness of 15 nm, and 17 layers were repeatedly laminated. The first
The layer was the compound (2). In the laminated film, the compound (1) serves as a well layer and the compound (2) serves as a barrier layer.

Example 2 (Superlattice Effect Using Oligomer) Powders of the compound (1) and the compound (2) used in Example 1 were placed in separate quartz crucibles and heated in a vacuum chamber. Set to 25 mm x 40 mm x 3 mm
The synthetic quartz plate of No. 1 was placed in a vacuum chamber and vacuumed. After the degree of vacuum reached to 10 ^-9 Torr, the two cells were alternately heated and the deposition rate of 1 A / min or less was applied to the compound (2) to a thickness of 10 mm and the compound (1) to a thickness of 5 nm. On the substrate, and repeat 1
0 layers were laminated. The first layer was the compound (2). In this laminated film, the compound (1) serves as a well layer and the compound (2) serves as a barrier layer.

The ultraviolet-visible absorption spectrum of the laminated thin film thus prepared is shown in FIG. In this figure, the horizontal axis represents the energy (eV) of absorbed light and the vertical axis represents the absorbance. Further, (I) of FIG. 2 shows an absorption spectrum of the laminated film produced in this example, and (II) shows 1000 A formed on a synthetic quartz plate.
Is an absorption spectrum of the compound (1) single film, and (IV) is an absorption spectrum of the 500A compound (2) single film formed in a synthetic quartz plate shape. As shown in FIG. 2, it was found that the peak of the compound (1) has a higher energy shift than in the case of the single film, and the quantum effect due to superlattice formation appears.

[Examples 3 to 33] As shown in Table 1, a combination of compounds represented by the general formula (I), (II) or (III) was used and laminated in the same manner as in Example 2, When the absorption spectra of the laminated films were measured, it was found that in all cases, the energy shift was higher than the absorption peak of the single film of the well layer, and the quantum effect due to superlattice formation appeared.

[0099]

[Table 1]

[0100]

[Table 2]

[0101]

[Table 3]

[0102]

[Table 4] [Example 34] (Copolymer having two or more oligomers)

[0103]

[Chemical 42] Compound (3)

[0104]

[Chemical 43] The powders of block copolymer oligomers having different composition ratios of thiophene and pyrrole contained in the molecular structure represented by the compound (4) are placed in different quartz crucibles and set in a heating cell in a vacuum chamber. . Further, gold used as a gate electrode was deposited on the surface of 30 nm by a vacuum vapor deposition method, and SiO ₂ used as an insulating film was further deposited by 300 nm by a sputtering method. 25 mm × 40 mm × 1
A mm synthetic quartz plate was placed in a vacuum chamber and vacuumed. After the degree of vacuum reaches 10 ^-9 Torr, the cell is heated and deposited on the substrate alternately so that the film thickness of each layer is 10 nm under the condition that the deposition rate is 1 A / min or less. Was formed. Further, gold as a gate electrode or a drain electrode was vapor-deposited with a thickness of 30 nm on the produced thin film to produce a stagger type field effect transistor element shown in FIG. Here, 10 is a quartz substrate, 11 is a gate electrode, 12 is an insulating film, 13 is an organic superlattice layer consisting of 10 layers, 14 is a source electrode, and 15 is a drain electrode.

When a negative electric field was applied to this cell and the FET characteristics were measured, the characteristics shown in FIG. 4 were obtained. Figure 4
In, the horizontal axis is the voltage value between the source electrode and the drain electrode,
The vertical axis represents the current value between the source electrode and the drain electrode. The voltage applied to the gate electrode was -40V. Here, (IV) is the characteristic of the FET element manufactured according to this example,
(V) is

[0106]

[Chemical 44] Is a characteristic of a stagger type FET device using a random copolymer of oligothiophene pyrrole (compound (5)) represented by

As shown in FIG. 4, it was found that the organic superlattice produced in this example had improved FET characteristics as compared with the random copolymer.

[Examples 35 to 64] As shown in Table 2,
When a combination of the compounds represented by the general formula (I), (II) or (III) was used and laminated in the same manner as in Example 23, and the electric conductivity of the laminated film was measured. It was also found that the properties of the random copolymer thin film were improved over the electrical conductivity.

[0109]

[Table 5]

[0110]

[Table 6]

[0111]

[Table 7]

[0112]

[Table 8] [Example 65] (Lamination of thin films in which the mixing ratio is changed with an oligomer composed of a single component) The compound (1) and the compound (2) used in Example 1
Each of the powders was placed in a different quartz crucible and set in a heating cell in a vacuum chamber. Next, gold used as a gate electrode was vapor-deposited with a thickness of 30 nm, and SiO ₂ used as an insulating film was further deposited with a thickness of 300 nm thereon.
A 1 mm synthetic quartz plate was placed in a vacuum chamber and vacuumed. After the vacuum reaches 10 ^-9 Torr, 2
The two cells were simultaneously heated to form a mixed thin film of the compound (1) and the compound (2) on the substrate. At this time, compound (1)
The temperature of each crucible was adjusted so that the mixing ratio of the compound (2) and the compound (2) was 2: 8. The film thickness was 50 nm.

Next, the temperatures of the two crucibles were changed, the temperatures of the respective crucibles were adjusted so that the mixing ratio of the compound (1) and the compound (2) was 9: 1, and then the mixing ratio was set to 2: 8. A laminated film was prepared by depositing on the thin film. The thickness of this layer is 1
It was set to 0 nm.

By repeating the above operation, a 10-layer organic superlattice having a mixing ratio of 2: 8 and 9: 1 was prepared. In this case, a layer having a mixing ratio of 2: 8 is a barrier layer and a layer having a mixing ratio of 9:
Layer 1 is a well layer.

Next, gold as a source electrode or a drain electrode was vapor-deposited with a thickness of 30 nm on this 10-layer laminated film to manufacture a stagger type FET element as shown in FIG. In FIG. 5, 20 is a substrate, 21 is a gate electrode, 22 is an insulating film, and 23.
Is a barrier layer, 24 is a well layer, 25 is a source electrode, and 26 is a drain electrode. When the FET characteristics of this element were measured, it was found that the characteristics were improved as compared with the FET of the compound (1) or compound (2) single thin film.

[Examples 66 to 75] As shown in Table 3,
Using a combination of compounds represented by the general formulas (I), (II) or (III), a mixed film was laminated in the same manner as in Example 44, and the electric conductivity of the laminated film was measured. In each case, the characteristics were improved compared to the electric conductivity of each single thin film, and it was found that the quantum effect due to superlattice formation appeared.

[0117]

[Table 9]

[0118]

[Table 10] [Example 76] (Crystal superlattice) When a laminated thin film made from the powders of the compound (1) and the compound (2) shown in Example 2 was prepared, the substrate temperature during deposition was set to 100 ° C. , The crystallinity of each layer is 90%
Improved.

Using this laminated film, a stagger type field effect transistor was manufactured in the same manner as in Example 2, and the electrical characteristics were measured. The characteristics were improved as compared with those in Example 2. It is considered that this is because the number of crystal grain boundaries serving as trap sites when carriers move is reduced due to improvement in crystallinity. By improving the crystallinity of each thin film layer, the effect of the superlattice can be further improved.

Example 77 (Epitaxial growth superlattice)

[0121]

[Chemical formula 45] And an oligopyrrole hexamer (compound (6))

[0122]

[Chemical formula 46] Using the oligofuran hexamer represented by (Compound (7)) to prepare a laminated thin film by the same method as described in Example 55, it is possible to obtain a thin film in which the crystallinity of each layer is 98%. I was able to. The difference in lattice constant between these compounds is about 8
%, It was found that the pseudo-epitaxial growth was caused by the effect of van der Waals force peculiar to organic substances.

Example 78 (Photochemical Intramolecular Polymerization Reaction) A potassium bromide (KBr) 001 single crystal substrate having a size of 15 mm × 15 mm × 3 mm was prepared by an organic molecular beam deposition method.

[0124]

[Chemical 47] After depositing 20 nm of the substance (compound (8)) shown in

[0125]

[Chemical 48] (Compound (9)) shown in (3) was laminated in a thickness of 10 nm. This operation was repeated to produce a laminated thin film composed of 10 layers. This thin film was irradiated with an excimer laser beam having a wavelength of 351 nm (energy per pulse: 1 mJ / cm ² ) so that the total amount of light was 5 J / cm ² . FIG. 6 shows a comparison of infrared absorption spectra of this thin film before and after irradiation. In FIG. 6, (VI) is before irradiation,
II) is the spectrum after irradiation. It can be seen that the absorption attributed to the azo bond near 1500 cm ⁻¹ is increased, whereas the absorption attributed to the azido group at 2300 cm ⁻¹ is significantly reduced. From this, it was found that the compound (9) caused a polymerization reaction by light irradiation.

Example 79 (Photochemical Interlayer Polymerization Reaction) A potassium bromide (KBr) 001 single crystal substrate having a size of 15 mm × 15 mm × 3 mm was prepared by an organic molecular beam deposition method.

[0127]

[Chemical 49] (Compound (10)) shown in 1 is deposited to a thickness of 10 nm, and

[0128]

[Chemical 50] The substance (compound (11)) shown in 1) was laminated in a thickness of 5 nm. This operation was repeated to produce a laminated thin film consisting of 20 layers. Excimer laser light with a wavelength of 248 nm (energy per pulse: 1 mJ / cm ² ) was applied to this thin film.
Was irradiated so that the total amount of light was 4 J / cm ² . FIG. 7 shows a comparison of infrared absorption spectra of this thin film after irradiation. Compared to the absorption is lost attributable to an azide group 2300 cm ^-1, 1500 cm ^-1
The absorption attributed to nearby azo bonds is significantly increased. From this, it was found that compound (10) and compound (11) caused a polymerization reaction by light irradiation.

[Example 80] (Organic HEMT element) [0129] The compound (1) was deposited to 100 nm on a 3-inch n-type silicon plate by the organic molecular beam evaporation method used in Example 1, and then deposited thereon.

[0130]

[Chemical 51] A laminated film was prepared by depositing a trimer of methoxyoligophenylene vinylene (compound (12)) represented by Next, an aluminum electrode having a thickness of 50 nm is provided on the laminated film by a normal vacuum deposition method to form a gate electrode,
Further, a gold electrode having a thickness of 50 nm was provided as a source electrode and a drain electrode. In this way, the transistor element shown in FIG. 8 was obtained. In this case, the channel layer is the compound (1), and the methoxyoligotunylene vinylene trimer functions as a carrier injection layer. In FIG. 8, 30
Is a substrate and 31 is a compound (1) that functions as a channel layer.
Thin film, compound acting as 32 carrier injection layer (1
2) Thin film, 33 is a source electrode, 34 is a gate electrode, and 35
Is a drain electrode.

Next, the electrical characteristics of this element are shown in FIG.
In this figure, the horizontal axis is the source-drain voltage (V _DS ) and the vertical axis is the source-drain current (I _DS ). When the gate voltage (VG) is 0V, V
_{Even if DS} becomes large, I _DS hardly flows, but positive V
_{When G} is applied, a large I _DS will flow.
Moreover, saturation of I _DS was observed in a region where V _DS was large, and typical transistor characteristics were obtained. Shows the conventional compound (1) alone film electrical characteristics when (thickness 500 nm) only was used in the active layer by a dotted line in FIG. 9, the same V _DS
Even when the voltage was applied, a larger I _DS flowed in the device manufactured this time, and a transistor with higher carrier mobility could be obtained.

Example 81 (Organic Crystal HEMT Element) In the thin film manufacturing process described in Example 80, the substrate temperature during deposition was set to 100 ° C. to form a film. Crystallinity is improved and crystallinity is 86
It was possible to fabricate a laminated film having a%. When the FET characteristics of this thin film were measured by the same method as in Example 80, an element with further improved carrier mobility could be manufactured.

Example 82 (Light Modulating Element) After depositing 30 nm of gold on a LaSF9 substrate of 20 mm × 10 mm × 1 mm, the entire substrate was subjected to the above-mentioned organic molecular beam deposition method.

[0134]

[Chemical 52] The oligocenedylene dipyrrole dimer (compound (13)) shown in was vapor-deposited at 100 nm, and gold was vapor-deposited at 30 nm on the central portion of the substrate by a usual vacuum vapor deposition method. Two sapphire triangular prisms were pressed against this thin film to obtain a device having the structure shown in FIG. In FIG. 10, 40 is an optical waveguide layer composed of the compound (13), 41 is an electrode film, 4
Reference numeral 2 is a semi-cylindrical prism, and 43 is a substrate. A laser diode light having a wavelength of 833 nm was incident on one prism to guide the light in the thin film, and then the other prism took out the guided light.

[0135] was applied an alternating electric field of a sine wave of 1 kH _Z between the gold electrodes in the device, the output light in response to the electric field intensity as shown in FIG. 11 is changed. As described above, the optical switch could be manufactured by this method.

[Example 83] (Optical switch element) After depositing 30 nm of gold on a LaSF9 substrate of 20 mm x 10 mm x 1 mm (Fig. 12 (a)), the organic molecular beam vapor deposition method was used.

[0137]

[Chemical 53] 80 nm for the dimer of oligophenylene dithiophene (compound (14)) and 20 nm for the compound (13)
Was deposited (FIG. 12B). A pattern of a Mach-Cendor element was formed on this laminated film by using a conventionally known lithography technique (FIG. 12).
(C)). Further, a siloxane polymer (trade name “Ladder Polymer” manufactured by Ryoden Kasei Co., Ltd.) was applied thereon by a spin coating method to a film thickness of 1 μm, and then 30 nm of gold was vapor-deposited again at the position indicated by 1 in FIG. , Mach-Cender type waveguide device was fabricated. FIG. 13 is a sectional view taken along line AA of FIG. Here, the cross section of the waveguide film was 500 μm × 300 μm. 5 in FIGS. 12 and 13
0 is an organic thin film which is an optical waveguide film of the compound (14), 51
Is a gold electrode film, 52 is a siloxane polymer film (insulating film),
53 indicates a substrate.

Laser diode light with a wavelength of 833 nm is made incident from the end face of this element, and 1 KH is applied between the gold electrodes.
When an alternating electric field having a sine wave of z was applied, the intensity of the output light changed corresponding to the electric field intensity as shown in FIG. As described above, the optical switch could be manufactured by this method.

Example 84 (Optical Bistable Device) A phenylene octamer represented by the compound (8) was deposited to a thickness of 20 nm on a 20 mm × 10 mm × 1 mm quartz glass substrate by an organic molecular beam deposition method. Then, the octamer of thiophene represented by the compound (9) was deposited thereon to a thickness of 10 nm. This operation was repeated 10 times to prepare an organic superlattice thin film element having a thickness of 2000 nm. This sample was irradiated from the vertical direction with continuous wave laser light having a wavelength of 830 nm obtained by combining an argon ion laser and a dye laser, and the transmitted light was detected by a high speed photodiode.
Further, the incident light was subjected to high speed modulation at a frequency of 1 GHz by a high speed optical modulator and a part thereof was taken out as a trigger. Connect the trigger of incident light and the output of transmitted light to the XY of the oscilloscope,
When the Lissajous figure was plotted, the bistable characteristics shown in FIG. 15 were obtained. The operating power at this time was on the order of mW, and a bistable element having a low threshold and a high speed response was obtained.

[0140]

According to the present invention, an organic superlattice is produced by using a π-conjugated linear oligomer, and by using this organic superlattice material, a transistor having a higher carrier mobility than ever, and further a conductive material can be obtained. It has become possible to provide optical devices with excellent non-linear optical characteristics such as waveguide type optical modulators, Mach-Cender type optical switches and optical bistable elements.

[Brief description of drawings]

FIG. 1 is a conceptual diagram of a band structure of an organic superlattice composed of a compound (1) and a compound (2).

FIG. 2 is an ultraviolet-visible absorption spectrum of an organic superlattice thin film composed of compound (1) and compound (2).

FIG. 3 is a schematic sectional view of a stagger type field effect transistor element.

FIG. 4 FET of organic superlattice thin film described in Example 23
It is a graph which shows the transistor characteristic of an element.

5 is a schematic cross-sectional view of a stagger type field effect transistor device using the laminated organic superlattice thin film described in Example 44. FIG.

6 is an infrared absorption spectrum of the thin film described in Example 57. FIG.

7 is an infrared absorption spectrum of the thin film described in Example 58. FIG.

FIG. 8 is a schematic sectional view of the HEMT type field effect transistor element described in Example 59.

9 is a HEM of the organic superlattice thin film described in Example 59. FIG.
It is a graph which shows the transistor characteristic of a T element.

FIG. 10 is a schematic cross-sectional view of a prism-coupled light modulation element.

FIG. 11 is a graph showing the light modulation characteristics of the prism-coupled light modulation element.

FIG. 12 is a conceptual diagram of a manufacturing process of a Mach-Zehnder interferometer type optical switch.

FIG. 13 is a schematic sectional view of a Mach-Zehnder type switch.

FIG. 14 is a graph showing an optical modulation characteristic of a Mach-Zehnder type optical switch.

FIG. 15 is a graph showing characteristics of an optical bistable element.

FIG. 16 is a schematic sectional view of a conventional organic superlattice.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Eiji Nobutoki 8-1-1 Tsukaguchihonmachi, Amagasaki City Mitsubishi Electric Corporation Material Device Research Center (72) Inventor Chie Fukada 8-1-1 Tsukaguchihonmachi, Amagasaki Mitsubishi Electric Corporation Material Device Research Center (72) Inventor Nobuyasu Nakao 8-1-1 Tsukaguchihonmachi, Amagasaki City Mitsubishi Electric Corporation Material Device Research Center

Claims (16)

[Claims] 1. An organic material composed of at least two layers of at least two kinds of organic thin films having a film thickness of 0.5 to 100 nm, and the thin film is constituted by any one of the at least two kinds of organic thin films. Organic superlattice material in which the basic skeleton of the molecule contains a π-conjugated linear oligomer. 2. The repeating unit of the π-conjugated linear oligomer has the general formula (I): (In the formula, X is S, N—H, N—CH ₃ , Se or O,
R ¹ and R ² are the same or different and each is H and has 1 carbon atom.
To an alkyl group having 3 to 3 or an alkoxy group having 1 to 3 carbon atoms)
One or more aromatic molecular groups (I) represented by the following general formula (II): (In the formula, Y is S, -CH = CH-, N-H, N-C.
H ₃ , Se or O, R ³ , R ⁴ are the same or different,
H, an alkyl group having 1 to 3 carbon atoms or 1 carbon atom, respectively
To an alkoxy group) to an aromatic molecular group (II)
One or more of the general formula (III): (In the formula, Z is N or C—H, R ⁵ , R ⁶ , and R ⁷ are the same or different, and each is H, an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms). An aromatic molecular group (III), which is composed of one kind or two or more kinds, and has an oligomer whose molecular chain end is H, an alkyl group having 1 to 3 carbon atoms, an alkoxy group having 1 to 3 carbon atoms, an azide group, a phenyl group, Chemical 4] Alternatively, the organic superlattice material according to claim 1, which is two kinds thereof. 3. The π-conjugated linear oligomer has the general formula (I): (In the formula, X is S, N—H, N—CH ₃ , Se or O,
R ¹ and R ² are the same or different and each is H and has 1 carbon atom.
To an alkyl group having 3 to 3 or an alkoxy group having 1 to 3 carbon atoms)
One or more aromatic molecular groups (I) represented by the following general formula (II): (Wherein, Y is S, N-H, N- CH 3, Se or O,
R ³ and R ⁴ are the same or different and each is H and has 1 carbon atom.
To an alkyl group having 3 to 3 or an alkoxy group having 1 to 3 carbon atoms)
One or more of the aromatic molecular groups (II) represented by or the general formula (III): (In the formula, Z is N or C—H, R ⁵ , R ⁶ , and R ⁷ are the same or different, and each is H, an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms). The organic superlattice material according to claim 2, wherein the organic superlattice material is an alternating copolymer composed of one kind or two or more kinds of the aromatic molecular group (III). 4. The π-conjugated linear oligomer has the general formula (I): (In the formula, X is S, N—H, N—CH ₃ , Se or O,
R ¹ and R ² are the same or different and each is H, an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms), or one or more species of the aromatic molecular group (I), General formula (II): (Wherein, Y is S, N-H, N- CH 3, Se or O,
R ³ and R ⁴ are the same or different and each is H, one or two of aromatic molecular group (II) represented by C 1 to C 3 alkyl group or C 1 to C 3 alkoxy group).
One or more, or general formula (III): (In the formula, Z is N or C—H, R ⁵ , R ⁶ , and R ⁷ are the same or different, and each is H, an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms). 2 out of 1 type or 2 or more types of aromatic molecular group (III)
The organic superlattice material according to claim 2, which is a block copolymer composed of one kind of aromatic molecular group. 5. The π-conjugated linear oligomer has the general formula (I): (In the formula, X is S, N—H, N—CH ₃ , Se or O,
R ¹ and R ² are the same or different and each is H, an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms), or one or more species of the aromatic molecular group (I), General formula (II): (Wherein, Y is S, N-H, N- CH 3, Se or O,
R ³ and R ⁴ are the same or different and each is H, one or two of aromatic molecular group (II) represented by C 1 to C 3 alkyl group or C 1 to C 3 alkoxy group).
One or more or general formula (III): (In the formula, Z is N or C—H, R ⁵ , R ⁶ , and R ⁷ are the same or different, and each is H, an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms). The basic thin film comprising a single aromatic molecular group of one or more of the aromatic molecular group (III) and constituting an organic superlattice is a π-conjugated linear oligomer of the single aromatic molecular group. 2. The organic superlattice material according to claim 1, wherein the organic superlattice material is a mixed thin film composed of two or more of the above, and is formed by laminating one or two or more thin films having different composition ratios with the basic thin film. 6. The π-conjugated linear oligomer has the general formula (I): (In the formula, X is S, N—H, N—CH ₃ , Se or O,
R ¹ and R ² are the same or different and each is H and has 1 carbon atom.
To an alkyl group having 3 to 3 or an alkoxy group having 1 to 3 carbon atoms)
One or more aromatic molecular groups (I) represented by the following general formula (II): (Wherein, Y is S, N-H, N- CH 3, Se or O,
R ³ and R ⁴ are the same or different and each is H and has 1 carbon atom.
To an alkyl group having 3 to 3 or an alkoxy group having 1 to 3 carbon atoms)
One or more of the aromatic molecular groups (II) represented by or the general formula (III): (In the formula, Z is N or C—H, R ⁵ , R ⁶ , and R ⁷ are the same or different, and each is H, an alkyl group having 1 to 3 carbon atoms or an alkoxy group having 1 to 3 carbon atoms). A mixed thin film composed of different aromatic molecular groups of the aromatic molecular group (III), and the basic thin film constituting the organic superlattice is two or more kinds of π-conjugated linear oligomers of the different aromatic molecular groups. And is formed by laminating one or more thin films having a different composition ratio from the basic thin film.
The described organic superlattice material. 7. The organic superlattice material according to claim 1, wherein each of the organic thin film layers is made of a crystal of a π-conjugated linear oligomer. 8. The organic superlattice material according to claim 1, wherein, in the two or more organic thin film layers, the difference in lattice constant between the organic thin film layers having different compositions is within 10%. 9. The organic thin film layer according to claim 1, wherein the π-conjugated linear oligomer in the organic thin film layer is polymerized or cross-linked to increase the molecular weight. The organic superlattice material described in 1. 10. The organic thin film layer is obtained by polymerizing the π-conjugated linear oligomer between thin films by inducing a chemical reaction in the π-conjugated linear oligomer present at the interface of the organic thin film layer. The organic superlattice material according to any one of claims 1 to 8. 11. The organic thin film layer is irradiated with light, radiation or an electron beam from the outside to induce a photochemical reaction to polymerize or crosslink the molecules in the organic thin film layer to increase the molecular weight. Item 10. A method for producing an organic superlattice material according to Item 9. 12. The organic thin film layer is irradiated with light, radiation or an electron beam from the outside to induce a photochemical reaction to polymerize a π-conjugated linear oligomer between or within the thin films. A method for producing the described organic superlattice material. 13. A high-speed transistor comprising a substrate and the organic superlattice material according to claim 1. 14. A light modulation element comprising a substrate and the organic superlattice material according to claim 1. 15. An optical switching element comprising a substrate and the organic superlattice material according to claim 1. 16. An optical bistable device comprising a substrate and the organic superlattice material according to claim 1. Description: