JPH07321330A - Electron part - Google Patents
Electron partInfo
- Publication number
- JPH07321330A JPH07321330A JP11615994A JP11615994A JPH07321330A JP H07321330 A JPH07321330 A JP H07321330A JP 11615994 A JP11615994 A JP 11615994A JP 11615994 A JP11615994 A JP 11615994A JP H07321330 A JPH07321330 A JP H07321330A
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- potential
- metal
- conductive particles
- electrodes
- Prior art date
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、液晶表示装置等に用
いられる電子部品に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to electronic parts used in liquid crystal display devices and the like.
【０００２】[0002]
【従来の技術】近年、液晶表示装置のスイッチング素子
として用いられている薄膜トランジスタ（ＴＦＴ）にお
いて、工程簡略化や実装抵抗の軽減等からゲート配線や
ソース配線を直接実装部へ引き出すアレイ構成が用いら
れている。この従来の液晶表示装置に用いられるＴＦＴ
アレイのゲート配線およびソース配線と各実装電極の概
略斜視図を図３に示す。2. Description of the Related Art Recently, in a thin film transistor (TFT) used as a switching element of a liquid crystal display device, an array structure in which a gate wiring and a source wiring are directly drawn to a mounting portion is used in order to simplify the process and reduce mounting resistance. ing. TFT used in this conventional liquid crystal display device
FIG. 3 shows a schematic perspective view of the gate wiring and the source wiring of the array and each mounting electrode.
【０００３】ＴＦＴアレイは、透明基板１上に、マトリ
クス状に画素電極１０が配置され、各画素電極１０にＴ
ＦＴのドレイン電極が接続され、ゲート配線２とソース
配線３が絶縁層（図示せず）を介して交差して形成され
ている。そして、ゲート配線２およびソース配線３の各
延長部には実装電極２ａ，３ａが設けられている。つぎ
に、図３のＴＦＴアレイにＴＡＢ実装を施した従来のメ
タル構成を図４，図５を用いて以下に説明する。図４は
実装電極２ａ，３ａ上にＴＡＢ材を実装した平面図であ
り、図５は図４におけるＡ−Ａ’線の断面図である。In the TFT array, the pixel electrodes 10 are arranged in a matrix on the transparent substrate 1, and each pixel electrode 10 has a T-shaped pattern.
The drain electrode of the FT is connected, and the gate wiring 2 and the source wiring 3 are formed to intersect each other with an insulating layer (not shown) interposed therebetween. Mounting electrodes 2a and 3a are provided on the respective extension portions of the gate wiring 2 and the source wiring 3. Next, a conventional metal structure in which the TFT array of FIG. 3 is TAB mounted will be described below with reference to FIGS. 4 and 5. 4 is a plan view in which a TAB material is mounted on the mounting electrodes 2a and 3a, and FIG. 5 is a cross-sectional view taken along the line AA ′ in FIG.
【０００４】ＴＦＴアレイの実装電極２ａ，３ａは、ゲ
ートおよびソース配線材である例えばＡｌやＡｌ化合物
で形成されている。実装電極２ａ，３ａの上部は液晶駆
動用ＩＣとのコンタクトを得るために、ＴＦＴの最終工
程として絶縁保護膜４を開口している。なお、図５はゲ
ート配線２の実装電極２ａ部分の断面図であるが、ソー
ス配線３の実装電極３ａ部分の断面構成も図５と同様で
ある。一方、ＴＡＢ材５はポリイミドフィルムにＴＡＢ
電極６が配置され、ＴＡＢ電極６は例えば配線材にＡｕ
やＳｎメッキが施されている。The mounting electrodes 2a and 3a of the TFT array are formed of, for example, Al or Al compound which is a gate and source wiring material. In order to obtain contact with the liquid crystal driving IC, the upper part of the mounting electrodes 2a and 3a has an insulating protective film 4 opened as a final step of the TFT. Although FIG. 5 is a sectional view of the mounting electrode 2a portion of the gate wiring 2, the sectional configuration of the mounting electrode 3a portion of the source wiring 3 is the same as that in FIG. On the other hand, TAB material 5 is TAB on a polyimide film.
The electrode 6 is arranged, and the TAB electrode 6 is made of, for example, Au as a wiring material.
And Sn plating are applied.
【０００５】そして、ＴＦＴアレイの実装電極２ａ，３
ａとＴＡＢ電極６とを導電性接着材８で電気的・機械的
に接続している。導電性接着材８は、導電性粒子８ａを
含有した接着材であり、導電性粒子８ａとしては、例え
ばＮｉ粒子や、樹脂ボールにＮｉやＡｕメッキされたも
のである。また、露出した実装電極２ａ，３ａを保護す
るために保護材９が塗布形成されている。このようにし
てＴＦＴ実装パネルが完成する。Then, the mounting electrodes 2a, 3 of the TFT array
a and the TAB electrode 6 are electrically and mechanically connected to each other with a conductive adhesive material 8. The conductive adhesive 8 is an adhesive containing conductive particles 8a, and the conductive particles 8a are, for example, Ni particles, or resin balls plated with Ni or Au. Further, a protective material 9 is applied and formed to protect the exposed mounting electrodes 2a and 3a. In this way, the TFT mounting panel is completed.
【０００６】このようなＴＦＴアレイのアレイ電極メタ
ルとＴＡＢ材メタルとの相関を電気化学法により評価し
た。まず、ポテンシオガルバノスタットを用いた評価系
を図６に示す。図６において、２１は動作電極、２２は
参照電極、２３は対極、２４は電界液、２５は電流計Ｉ
と電圧計Ｖを有する測定器である。参照電極２２にＡｇ
・ＡｇＣｌ、対極２３にＰｔ、電解液２４にＮａ2 ＳＯ
4水溶液（０．０１Ｍ／ｌ）を用いた。そして、動作電
極２１として、ＴＡＢ電極６のメッキ材であるＡｕ，Ｓ
ｎ、導電性接着材８の導電性粒子８ａを構成するＡｕ，
Ｎｉ、ＴＦＴアレイの実装電極２ａ，３ａとなる純Ａｌ
を用いて、動作電極２１，参照電極２２および対極２３
に電圧を印加して純Ａｌ，Ａｕ，Ｎｉ，Ｓｎの各メタル
の電位を測定した。この測定による分極曲線を図７に示
す。図７の横軸は電圧計Ｖの電圧値であり、Ａｇ・Ａｇ
Ｃｌの参照電極２２の電位に対する動作電極２１の電位
を示す。縦軸は電流計Ｉの電流値である。The correlation between the array electrode metal of such a TFT array and the TAB material metal was evaluated by an electrochemical method. First, FIG. 6 shows an evaluation system using a potentiogalvanostat. In FIG. 6, 21 is a working electrode, 22 is a reference electrode, 23 is a counter electrode, 24 is an electrolytic solution, and 25 is an ammeter I.
And a voltmeter V. Ag on the reference electrode 22
・ AgCl, Pt for counter electrode 23, Na 2 SO for electrolyte 24
4 aqueous solution (0.01 M / l) was used. Then, as the working electrode 21, Au, S which is the plating material of the TAB electrode 6 is used.
n, Au constituting the conductive particles 8a of the conductive adhesive 8,
Ni, pure Al to be the mounting electrodes 2a and 3a of the TFT array
By using the working electrode 21, the reference electrode 22 and the counter electrode 23.
A voltage was applied to the electrodes to measure the potentials of the pure Al, Au, Ni, and Sn metals. The polarization curve obtained by this measurement is shown in FIG. The horizontal axis of FIG. 7 is the voltage value of the voltmeter V, and Ag · Ag
The potential of the working electrode 21 with respect to the potential of the reference electrode 22 of Cl is shown. The vertical axis represents the current value of the ammeter I.
【０００７】その結果、Ａｕ，Ｓｎ，Ｎｉを５０ｍｖ／
ｓｅｃでカソード分極すると、参照電極２２に対するＡ
ｕの平衡電位は＋１．８３ｖ、Ｎｉでは＋１．２２ｖ、
Ｓｎでは−０．３３４ｖであり、Ａｕ，ＮｉはＳｎより
低印加電圧で還元電流が流れ出す。一方、参照電極２２
に対する純Ａｌの平衡電位は−０．５８ｖであり、５０
ｍｖ／ｓｅｃでアノード分極すると、Ａｌの溶出に伴う
酸化電流が流れる。図７に示すように、ＴＡＢ材メタル
（Ａｕ，Ｓｎ）とアレイ電極メタル（Ａｌ）との相関に
おいて、特に導電性粒子８ａの構成要素であるＡｕやＮ
ｉがＡｌに接触した場合には、ＡｕとＡｌ間、ＮｉとＡ
ｌ間において電池反応が進行してＡｌが腐食しやすい状
態にあることがわかる。As a result, Au, Sn, and Ni were added at 50 mv /
When cathode polarization is performed in sec, A to the reference electrode 22
The equilibrium potential of u is + 1.83v, Ni is + 1.22v,
In Sn, it is −0.334v, and in Au and Ni, the reducing current starts flowing at a lower applied voltage than Sn. On the other hand, the reference electrode 22
The equilibrium potential of pure Al is -0.58v,
When anodic polarization is performed at mv / sec, an oxidation current flows along with the elution of Al. As shown in FIG. 7, in the correlation between the TAB material metal (Au, Sn) and the array electrode metal (Al), in particular, Au or N which is a constituent element of the conductive particle 8a.
When i contacts Al, between Au and Al, Ni and A
It can be seen that the cell reaction progresses during the interval of 1 and Al is easily corroded.
【０００８】[0008]
【発明が解決しようとする課題】したがって、上記従来
のＴＦＴ実装パネルを高温高湿下にさらすと、ＴＦＴア
レイの実装電極２ａ，３ａとＴＡＢ電極６との間に電池
反応を生じ、局部腐食を生じる。腐食は進行度によって
電極配線の腐食断線に至るものがある。この発明の目的
は、高温高湿下においても電極間の接続部における電池
反応を抑制して、電極の腐食および断線を防止すること
のできる電子部品を提供することである。Therefore, when the above-mentioned conventional TFT mounting panel is exposed to high temperature and high humidity, a battery reaction occurs between the mounting electrodes 2a and 3a of the TFT array and the TAB electrode 6 to cause local corrosion. Occurs. Corrosion may lead to corrosion breakage of electrode wiring depending on the degree of progress. An object of the present invention is to provide an electronic component capable of suppressing a battery reaction at a connection portion between electrodes even under high temperature and high humidity, and preventing corrosion and disconnection of the electrodes.
【０００９】[0009]
【課題を解決するための手段】請求項１記載の電子部品
は、導電性粒子を含有する導電性接着材を用いて他の電
極と接続する電極に、前記導電性粒子の還元電位よりも
高い酸化電位を有する金属を用いたことを特徴とする。
請求項２記載の電子部品は、請求項１記載の電子部品に
おいて、他の電極に接続する電極に用いる金属は、腐食
電流が小さくなる高融点金属を添加したアルミニウムか
らなるものである。According to another aspect of the present invention, there is provided an electronic component, in which an electrode connected to another electrode by using a conductive adhesive containing conductive particles is higher than a reduction potential of the conductive particles. It is characterized by using a metal having an oxidation potential.
According to a second aspect of the present invention, in the electronic component according to the first aspect, the metal used for an electrode connected to another electrode is aluminum to which a refractory metal having a small corrosion current is added.
【００１０】請求項３記載の電子部品は、請求項２記載
の電子部品において、アルミニウムに添加する高融点金
属としてジルコニウムを用いたものである。According to a third aspect of the present invention, in the electronic component according to the second aspect, zirconium is used as the refractory metal added to aluminum.
【００１１】[0011]
【作用】この発明の構成によれば、導電性粒子を含有す
る導電性接着材を用いて他の電極と接続する電極に、導
電性粒子の還元電位よりも高い酸化電位を有する金属を
用いたことにより、高温高湿下においても、電極間にお
いてそれぞれ電位差を保持して、電池反応を抑制し、電
極の腐食および断線を防止することができる。According to the structure of the present invention, a metal having an oxidation potential higher than the reduction potential of the conductive particles is used for the electrode connected to the other electrode by using the conductive adhesive containing the conductive particles. As a result, even under high temperature and high humidity, it is possible to maintain the potential difference between the electrodes, suppress the battery reaction, and prevent corrosion and disconnection of the electrodes.
【００１２】特に、導電性接着材の導電性粒子がＮｉや
Ａｕよりなる場合に、ＮｉやＡｕの還元電位よりも高い
酸化電位を有する金属としてジルコニウムを添加したア
ルミニウムを電極に用いることにより、電池反応を抑制
し、電極の腐食および断線を防止することができる。In particular, when the conductive particles of the conductive adhesive are made of Ni or Au, by using aluminum containing zirconium as a metal having an oxidation potential higher than the reduction potential of Ni or Au for the electrode, a battery can be obtained. The reaction can be suppressed, and the corrosion and disconnection of the electrode can be prevented.
【００１３】[0013]
【実施例】この発明の一実施例について説明する。この
実施例では、従来例の図３〜図５におけるＴＦＴアレイ
の実装電極２ａ，３ａを、腐食電流が小さくなる高融点
金属であるジルコニウム（Ｚｒ）を添加したＡｌ（Ａｌ
Ｚｒ）で形成したことを特徴とし、その他の構成は従来
と同様である。EXAMPLE An example of the present invention will be described. In this embodiment, the mounting electrodes 2a and 3a of the TFT array shown in FIGS. 3 to 5 of the conventional example are made of Al (Al) to which zirconium (Zr) which is a refractory metal having a small corrosion current is added.
It is characterized in that it is formed of Zr), and the other structure is the same as the conventional one.
【００１４】Ｚｒ添加量によってＡｌＺｒの実装電極２
ａ，３ａの電位は変化する。純Ａｌとの比較を含めＡｌ
Ｚｒについて、図６に示す従来例と同様にして電気化学
法により測定した分極曲線を図１に示す。図１の横軸は
図６に示す電圧計Ｖの電圧値であり、Ａｇ・ＡｇＣｌを
用いた参照電極２２の電位に対する動作電極２１の電位
を示す。縦軸は電流計Ｉの電流値である。なお、図１中
の各Ｅ0 の値はこの実施例での参照電極２２に対する純
Ａｌ，Ａｌ−Ｚｒ０．７ａｔ％，Ａｌ−Ｚｒ１．４ａｔ
％の各メタルの平衡電位である。AlZr mounting electrode 2 depending on the amount of Zr added
The potentials of a and 3a change. Al including comparison with pure Al
A polarization curve of Zr measured by an electrochemical method in the same manner as in the conventional example shown in FIG. 6 is shown in FIG. The horizontal axis of FIG. 1 is the voltage value of the voltmeter V shown in FIG. 6, and shows the potential of the working electrode 21 with respect to the potential of the reference electrode 22 using Ag / AgCl. The vertical axis represents the current value of the ammeter I. The values of E 0 in FIG. 1 are pure Al, Al-Zr 0.7 at% and Al-Zr 1.4 at for the reference electrode 22 in this embodiment.
% Is the equilibrium potential of each metal.
【００１５】図１に示すように、純Ａｌは−０．５ｖで
は既に酸化電流が測定されている。しかし、Ｚｒ添加の
ＡｌＺｒは−０．５ｖよりも高いところで酸化電流が測
定されており、また、Ｚｒ濃度の高いＡｌＺｒ（Ａｌ−
Ｚｒ１．４ａｔ％）の方が、Ｚｒ濃度の低いＡｌＺｒ
（Ａｌ−Ｚｒ０．７ａｔ％）より高いところで酸化電流
が測定されている。As shown in FIG. 1, the oxidation current of pure Al was already measured at -0.5v. However, the oxidation current of AlZr added with Zr is higher than -0.5v, and the oxidation current is measured at a high Zr concentration.
Zr1.4at%) has a lower Zr concentration than AlZr
The oxidation current is measured at a higher temperature than (Al-Zr 0.7 at%).
【００１６】このＺｒ濃度が０．７％と１．４％のＡｌ
Ｚｒを、図３〜図５のゲートおよびソースの実装電極２
ａ，３ａに用い、実装電極部のメタル構成を従来例同
様、図６に示す電気化学法により評価した結果を図２に
示す。なお、従来例でも説明したように、ＴＡＢ電極６
は配線材にＡｕやＳｎメッキが施されてあり、導電性接
着材８は、Ｎｉ粒子や、ＮｉやＡｕメッキした樹脂ボー
ルからなる導電性粒子８ａを含有した接着材である。Al having Zr concentrations of 0.7% and 1.4%
Zr is the mounting electrode 2 for the gate and the source in FIGS.
FIG. 2 shows the results of evaluation of the metal structure of the mounting electrode portions used for a and 3a by the electrochemical method shown in FIG. 6 as in the conventional example. As described in the conventional example, the TAB electrode 6
The wiring material is plated with Au or Sn, and the conductive adhesive 8 is an adhesive containing Ni particles and conductive particles 8a made of resin balls plated with Ni or Au.
【００１７】図２から、実装関連材であるＡｕやＮｉや
Ｓｎの還元電位とＴＦＴ電極であるＡｌＺｒの酸化電位
の相関において、Ｚｒ濃度０．７ａｔ％，１．４ａｔ％
のＡｌＺｒどちらも酸化電流の流れ始める酸化電位はＳ
ｎ，Ｎｉ各還元電位よりも高く、したがってＡｌＺｒと
Ｓｎ間およびＡｌＺｒとＮｉ間ではそれぞれが接触して
も電池反応は生じにくいことが判った。また、Ｚｒ濃度
０．７ａｔ％のＡｌＺｒの酸化電位はＡｕの還元電位よ
り低く、電池反応が生じる。しかし、Ｚｒ濃度１．４ａ
ｔ％のＡｌＺｒの酸化電位はＡｕの還元電位より高く、
したがってＡｌＺｒとＡｕ間ではＺｒが高濃度であれば
それぞれが接触しても電池反応は生じにくいことが判っ
た。From FIG. 2, in the correlation between the reduction potential of Au, Ni, and Sn which are mounting-related materials and the oxidation potential of AlZr which is a TFT electrode, the Zr concentrations are 0.7 at% and 1.4 at%.
In both AlZr, the oxidation potential at which the oxidation current starts to flow is S
It was found that the cell potential is higher than the reduction potentials of n and Ni, so that a cell reaction is unlikely to occur between AlZr and Sn and between AlZr and Ni even if they come into contact with each other. Further, the oxidation potential of AlZr having a Zr concentration of 0.7 at% is lower than the reduction potential of Au, and a battery reaction occurs. However, Zr concentration 1.4a
The oxidation potential of t% AlZr is higher than the reduction potential of Au,
Therefore, it was found that between Zr and Au, if the Zr concentration is high, the battery reaction is unlikely to occur even if they contact each other.
【００１８】また、この実施例によるＴＦＴアレイを温
度８５℃，湿度８５％の環境下で放置試験し、光学顕微
鏡による観察を行った。その結果、ＡｌＺｒは純Ａｌと
比べてメタル露出部での腐食が少なく、かつ純Ａｌは腐
食の大きな拡がりが見られたのに対して、ＡｌＺｒはピ
ンホールレベルの形状で、その数も少なかった。以上の
ようにこの実施例によれば、実装部材であるＡｕやＮｉ
やＳｎの還元電位よりも高い酸化電位を有するＡｌＺｒ
を実装電極２ａ，３ａに用いることにより、電極電位差
を大きく保持して、実装部材とＡｌＺｒ間の電池反応を
抑制し、Ａｌ腐食を防止でき、信頼性の向上を図ること
ができる。Further, the TFT array according to this example was subjected to a standing test in an environment of a temperature of 85 ° C. and a humidity of 85%, and observed by an optical microscope. As a result, AlZr was less corroded in the exposed metal part than pure Al, and a large spread of corrosion was seen in pure Al, whereas AlZr was pinhole level shape and the number was small. . As described above, according to this embodiment, the mounting members Au and Ni are used.
AlZr having an oxidation potential higher than the reduction potential of Sn and Sn
By using the as the mounting electrodes 2a and 3a, a large electrode potential difference can be maintained, a battery reaction between the mounting member and AlZr can be suppressed, Al corrosion can be prevented, and reliability can be improved.
【００１９】また、この実施例では、図５に示す構成に
おいて、ＴＦＴアレイの実装電極２ａ，３ａとなる電極
材料にＡｌＺｒを用いたが、液晶駆動用ＩＣを載置する
ＴＡＢ材５の実装電極であるＴＡＢ電極６にＡｌＺｒを
用いることにより効果を得ることができる。また、液晶
駆動用ＩＣの実装電極にＡｌＺｒを用いることもでき
る。Further, in this embodiment, in the structure shown in FIG. 5, AlZr is used as the electrode material for the mounting electrodes 2a and 3a of the TFT array, but the mounting electrode of the TAB material 5 on which the liquid crystal driving IC is mounted is mounted. The effect can be obtained by using AlZr for the TAB electrode 6 which is Also, AlZr can be used for the mounting electrodes of the liquid crystal driving IC.
【００２０】なお、電極材料であるＡｌに含有されるＺ
ｒの含有量は、０．３〜１０．０％の範囲においてより
良い効果がある。ＴＦＴアレイの配線材は、液晶表示装
置としての表示特性上、細線，薄膜が望まれる。したが
って、Ｚｒ濃度の上限（１０．０％）は前記配線材のデ
バイス設計上の比抵抗値で規定され、Ｚｒ濃度の下限
（０．３％）は本発明の目的とするＡｌ防食効果が得ら
れ、かつ成膜ターゲットのつくりやすさ（均一濃度分布
等）から規定した。Z contained in Al which is an electrode material
The content of r has a better effect in the range of 0.3 to 10.0%. The wiring material of the TFT array is desired to be a thin line or a thin film in view of display characteristics as a liquid crystal display device. Therefore, the upper limit (10.0%) of the Zr concentration is defined by the specific resistance value of the wiring material in the device design, and the lower limit (0.3%) of the Zr concentration provides the Al anticorrosion effect which is the object of the present invention. And the ease of forming the film-forming target (uniform concentration distribution, etc.).
【００２１】また、この実施例では、電極材料として、
Ａｌに含有する高融点金属としてＺｒを用いたが、スカ
ンジウム（Ｓｃ）やタングステン（Ｗ）を用いても同様
の効果を得ることができる。以上の実施例から明らかな
ように、この発明を適用する電子部品として、スイッチ
ング素子としてＴＦＴを有する液晶表示装置があり、ゲ
ートおよびソース・ドレイン電極の実装電極をＡｌＺｒ
で形成することにより、実装部材であるＡｕやＮｉやＳ
ｎの還元電位とＴＦＴ電極であるＡｌＺｒの酸化電位と
の間に電極電位差を大きく保持して、高温高湿下におい
ても、実装部材とＡｌＺｒ間の電池反応を抑制し、Ａｌ
腐食を防止でき、信頼性の向上を図ることができる。ま
た、Ａｌ腐食については、ＡｕメッキされたＴＡＢ電極
との相関において特に有効であり、信頼性の高い液晶表
示装置を得ることができる。In this embodiment, the electrode material is
Although Zr is used as the refractory metal contained in Al, the same effect can be obtained by using scandium (Sc) or tungsten (W). As is clear from the above embodiments, there is a liquid crystal display device having a TFT as a switching element as an electronic component to which the present invention is applied, and the mounting electrodes for the gate and source / drain electrodes are AlZr.
By being formed with, the mounting members Au, Ni, S
A large electrode potential difference is maintained between the reduction potential of n and the oxidation potential of AlZr, which is the TFT electrode, to suppress the battery reaction between the mounting member and AlZr even under high temperature and high humidity.
Corrosion can be prevented and reliability can be improved. Further, Al corrosion is particularly effective in correlation with the Au-plated TAB electrode, and a highly reliable liquid crystal display device can be obtained.
【００２２】[0022]
【発明の効果】この発明によれば、導電性粒子を含有す
る導電性接着材を用いて他の電極と接続する電極に、導
電性粒子の還元電位よりも高い酸化電位を有する金属を
用いたことにより、高温高湿下においても、電極間にお
いてそれぞれ電位差を保持して、電池反応を抑制し、電
極の腐食および断線を防止することができ、信頼性の向
上を図ることができる。According to the present invention, a metal having an oxidation potential higher than the reduction potential of the conductive particles is used for the electrode connected to another electrode by using the conductive adhesive containing the conductive particles. As a result, even under high temperature and high humidity, the potential difference can be held between the electrodes, the battery reaction can be suppressed, the electrodes can be prevented from corrosion and disconnection, and the reliability can be improved.
【００２３】特に、導電性接着材の導電性粒子がＮｉや
Ａｕよりなる場合に、ＮｉやＡｕの還元電位よりも高い
酸化電位を有する金属としてジルコニウムを添加したア
ルミニウムを電極に用いることにより、電池反応を抑制
し、電極の腐食および断線を防止することができ、信頼
性の向上を図ることができる。In particular, when the conductive particles of the conductive adhesive are made of Ni or Au, by using aluminum containing zirconium as a metal having an oxidation potential higher than the reduction potential of Ni or Au for the electrode, The reaction can be suppressed, the electrodes can be prevented from corroding and breaking, and the reliability can be improved.
【図１】この発明の実施例を説明するためのＡｌＺｒに
ついて電気化学法により測定した分極曲線を示す図であ
る。FIG. 1 is a diagram showing a polarization curve measured by an electrochemical method for AlZr for explaining an example of the present invention.
【図２】この発明の実施例における実装関連材を電気化
学法により測定した分極曲線を示す図である。FIG. 2 is a diagram showing a polarization curve of a mounting-related material in an example of the present invention measured by an electrochemical method.
【図３】液晶表示装置に用いられるＴＦＴアレイの斜視
図である。FIG. 3 is a perspective view of a TFT array used in a liquid crystal display device.
【図４】従来のＴＡＢ材をＴＦＴアレイに装着した平面
図である。FIG. 4 is a plan view in which a conventional TAB material is mounted on a TFT array.
【図５】図４におけるＡ−Ａ’線の断面図である。5 is a cross-sectional view taken along the line A-A ′ in FIG.
【図６】電気化学法による評価系を示す図である。FIG. 6 is a diagram showing an evaluation system by an electrochemical method.
【図７】従来例における実装関連材を電気化学法により
測定した分極曲線を示す図である。FIG. 7 is a diagram showing a polarization curve of a mounting-related material in a conventional example measured by an electrochemical method.
２ａ 実装電極 ５ ＴＡＢ材 ６ ＴＡＢ電極 ８ 導電性接着材 ８ａ 導電性粒子 2a Mounting electrode 5 TAB material 6 TAB electrode 8 Conductive adhesive 8a Conductive particle
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/60 ３１１ Ｒ 6918−4Ｍ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Office reference number FI technical display location H01L 21/60 311 R 6918-4M
Claims (3)
いて他の電極と接続する電極に、前記導電性粒子の還元
電位よりも高い酸化電位を有する金属を用いたことを特
徴とする電子部品。1. A metal having an oxidation potential higher than the reduction potential of the conductive particles is used for an electrode connected to another electrode by using a conductive adhesive containing conductive particles. Electronic components.
は、腐食電流が小さくなる高融点金属を添加したアルミ
ニウムからなる請求項１記載の電子部品。2. The electronic component according to claim 1, wherein the metal used for an electrode connected to another electrode is aluminum to which a refractory metal having a small corrosion current is added.
てジルコニウムを用いた請求項２記載の電子部品。3. The electronic component according to claim 2, wherein zirconium is used as the refractory metal added to aluminum.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11615994A JP3148515B2 (en) | 1994-05-30 | 1994-05-30 | Liquid crystal display and electronic components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11615994A JP3148515B2 (en) | 1994-05-30 | 1994-05-30 | Liquid crystal display and electronic components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07321330A true JPH07321330A (en) | 1995-12-08 |
| JP3148515B2 JP3148515B2 (en) | 2001-03-19 |
Family
ID=14680242
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11615994A Expired - Fee Related JP3148515B2 (en) | 1994-05-30 | 1994-05-30 | Liquid crystal display and electronic components |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3148515B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120200985A1 (en) * | 2009-10-30 | 2012-08-09 | Masashi Shoji | Electrode foil and capacitor using same |
-
1994
- 1994-05-30 JP JP11615994A patent/JP3148515B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120200985A1 (en) * | 2009-10-30 | 2012-08-09 | Masashi Shoji | Electrode foil and capacitor using same |
| US8749954B2 (en) * | 2009-10-30 | 2014-06-10 | Panasonic Corporation | Electrode foil and capacitor using same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3148515B2 (en) | 2001-03-19 |
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