JPH07319158A - Positive type resist composition - Google Patents

Positive type resist composition

Info

Publication number
JPH07319158A
JPH07319158A JP11129994A JP11129994A JPH07319158A JP H07319158 A JPH07319158 A JP H07319158A JP 11129994 A JP11129994 A JP 11129994A JP 11129994 A JP11129994 A JP 11129994A JP H07319158 A JPH07319158 A JP H07319158A
Authority
JP
Japan
Prior art keywords
represented
less
chain
carbon atoms
formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11129994A
Other languages
Japanese (ja)
Other versions
JP3443935B2 (en
Inventor
Kazuhiko Hashimoto
和彦 橋本
Nobuo Ando
信雄 安藤
Hiroshi Moriba
洋 森馬
Yasunori Kamiya
保則 上谷
Yoshiyuki Takada
佳幸 高田
Haruki Ozaki
晴喜 尾崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Chemical Co Ltd
Original Assignee
Sumitomo Chemical Co Ltd
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Filing date
Publication date
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Priority to JP11129994A priority Critical patent/JP3443935B2/en
Publication of JPH07319158A publication Critical patent/JPH07319158A/en
Application granted granted Critical
Publication of JP3443935B2 publication Critical patent/JP3443935B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To obtain this resist compsn. excellent in balance of various properties such as sensitivity, resolution, gamma-value, heat resistance, profile and the depth of focus and free from residue on development by using a specified compd. of novolak type resin, using a methylol compd. CONSTITUTION:This resist compsn. contains a photosensitive agent and alkali- soluble novolak resin. The photosensitive agent is 1,2- naphthoquinonediazidosulfonic ester of novolak type resin obtd. by allowing a methylol compd. represented by formula I to react with phenol represented by formula II in the presence of an acid catalyst. The novolak type resin consists of >=50wt.% tetranuclear compd. represented by formula III, <=10wt.% low mol.wt. component having a lower mol.wt. than the tetranuclear compd. and <=40wt.% high mol.wt. component having a higher mol.wt. than the tetranuclear compd. In the formulae I-III, each of R1-R10 is alkoxy, alkyl, hydroxyl, etc.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は紫外線及び遠紫外線(エ
キシマーレーザーを含む)等の放射線に感応する高集積
回路作製用レジストとして好適なポジ型レジスト組成物
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a positive resist composition suitable as a resist for producing highly integrated circuits which is sensitive to radiation such as ultraviolet rays and deep ultraviolet rays (including excimer lasers).

【0002】[0002]

【従来の技術】高集積回路作製用レジストとして例えば
特開平6−67418 号公報には、アルカリ可溶性ノボラッ
ク樹脂及び下式
2. Description of the Related Art As a resist for producing a highly integrated circuit, for example, JP-A-6-67418 discloses an alkali-soluble novolak resin and the following formula.

【0003】[0003]

【化8】 [Chemical 8]

【0004】〔式中、R1 は同一又は異なり、炭素数1
〜10のアルキル基、炭素数1〜7のアルコキシ基、炭素
数1〜7のアシル基、炭素数6〜10のアリール基、炭素
数2〜6のアルケニル基、炭素数6〜10のアリールオキ
シ基および炭素数2〜10のアルコキシカルボニル基から
選ばれる置換基を示し、R2 およびR3 は同一又は異な
り、水素原子、炭素数1〜10のアルキル基、炭素数6〜
10のアリール基、炭素数6〜10のアラルキル基およびフ
リル基から選ばれ、mは0〜3の整数を示し、そしてn
は1〜3の整数を示す(但しm+n≦4である)〕で示
される繰返し単位を有し、GPC による標準ポリスチレン
換算重量平均分子量(Mw)が4000以下であり、Mwと
数平均分子量(Mn)の比(Mw/Mn)が2.5 以下で
あり、そして1核体と2核体成分の全溶出成分に対する
面積比が15%未満であるフェノール樹脂とキノンジアジ
ドスルホン酸との縮合物に相当する、水酸基に対するキ
ノンジアジドスルホニル基の平均縮合率が75%以下であ
るキノンジアジド化合物、を含有することを特徴とする
ポジ型感放射線性樹脂組成物が記載されている。しかし
ながら、この組成物は解像度又はγ値等の観点から不満
足なものであった。
[Wherein R 1 is the same or different and has 1 carbon atom
To C10 alkyl group, C1 to C7 alkoxy group, C1 to C7 acyl group, C6 to C10 aryl group, C2 to C6 alkenyl group, C6 to C10 aryloxy Represents a substituent selected from a group and an alkoxycarbonyl group having 2 to 10 carbon atoms, R 2 and R 3 are the same or different and each represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or 6 to 6 carbon atoms.
Selected from an aryl group having 10 carbon atoms, an aralkyl group having 6 to 10 carbon atoms and a furyl group, m represents an integer of 0 to 3, and n
Represents an integer of 1 to 3 (provided that m + n ≦ 4)], the standard polystyrene-converted weight average molecular weight (Mw) by GPC is 4000 or less, and Mw and number average molecular weight (Mn Corresponding to a condensate of a phenolic resin and quinonediazide sulfonic acid having a ratio (Mw / Mn) of less than 2.5 and an area ratio of the mononuclear and dinuclear components to the total eluted components of less than 15%, A positive-type radiation-sensitive resin composition is described, which comprises a quinonediazide compound having an average condensation rate of quinonediazidesulfonyl groups with respect to hydroxyl groups of 75% or less. However, this composition was unsatisfactory from the viewpoint of resolution or γ value.

【0005】[0005]

【発明が解決しようとする課題】本発明は上記従来技術
の問題点を解決して、感度、解像度、γ値、耐熱性、プ
ロファイル及び焦点深度等の諸性能のバランスに優れ、
しかも現像残さ(スカム)のないポジ型レジスト組成物
を提供する。
SUMMARY OF THE INVENTION The present invention solves the above-mentioned problems of the prior art and has an excellent balance of various performances such as sensitivity, resolution, γ value, heat resistance, profile and depth of focus.
Moreover, a positive resist composition having no development residue (scum) is provided.

【0006】[0006]

【課題を解決するための手段】本発明は、感光剤及びア
ルカリ可溶性ノボラック樹脂を含むポジ型レジスト組成
物であって、上記感光剤が一般式(Ia)又は(Ib)
The present invention is a positive resist composition containing a photosensitizer and an alkali-soluble novolac resin, wherein the photosensitizer is represented by the general formula (Ia) or (Ib).

【0007】[0007]

【化9】 [Chemical 9]

【0008】(式中、R1 及びR2 は各々独立して炭素
数6以下の鎖状のアルコキシ基、炭素数6以下の鎖状も
しくは環状のアルキル基、水素原子、又は水酸基、炭素
数6以下の鎖状のアルコキシ基及び炭素数6以下の鎖状
もしくは環状のアルキル基からなる群から選ばれる1種
以上の置換基を有してもよいフェニル基を表わし、R3
〜R6 は各々独立して水酸基、水素原子、炭素数6以下
の鎖状のアルコキシ基又は炭素数6以下の鎖状もしくは
環状のアルキル基を表わし、m0 は0〜6の整数を表わ
す。)で示されるメチロール化合物及び一般式(II)
(In the formula, R 1 and R 2 are each independently a chain alkoxy group having 6 or less carbon atoms, a chain or cyclic alkyl group having 6 or less carbon atoms, a hydrogen atom, a hydroxyl group, or 6 carbon atoms. R 3 represents a phenyl group which may have one or more substituents selected from the group consisting of the following chain alkoxy groups and chain or cyclic alkyl groups having 6 or less carbon atoms, and R 3
To R 6 each independently represent a hydroxyl group, a hydrogen atom, a chain alkoxy group having 6 or less carbon atoms, or a chain or cyclic alkyl group having 6 or less carbon atoms, and m 0 represents an integer of 0 to 6. ) And a general formula (II)

【0009】[0009]

【化10】 [Chemical 10]

【0010】(式中、R7 〜R10は各々独立して水酸
基、水素原子、炭素数6以下の鎖状のアルコキシ基又は
炭素数6以下の鎖状もしくは環状のアルキル基を表わ
す。)で示されるフェノール類を酸触媒の存在下に反応
させて得られるノボラック型樹脂の1,2−ナフトキノ
ンジアジドスルホン酸エステルであり、且つ、上記ノボ
ラック型樹脂が一般式(IIIa)又は(IIIb)
(In the formula, R 7 to R 10 each independently represent a hydroxyl group, a hydrogen atom, a chain alkoxy group having 6 or less carbon atoms, or a chain or cyclic alkyl group having 6 or less carbon atoms). Is a 1,2-naphthoquinonediazide sulfonic acid ester of a novolak type resin obtained by reacting the indicated phenols in the presence of an acid catalyst, and the novolak type resin is represented by the general formula (IIIa) or (IIIb).

【0011】[0011]

【化11】 [Chemical 11]

【0012】[0012]

【化12】 [Chemical 12]

【0013】(式中、R1 〜R10及びm0 は上記と同じ
意味である。)で示される4核体化合物の50重量%以
上、当該4核体化合物よりも分子量の小さい低分子量成
分(未反応のメチロール化合物及びフェノール類を含
む)の10重量%以下、及び4核体化合物よりも分子量の
大きい高分子量成分の40重量%以下からなることを特徴
とするポジ型レジスト組成物である。
(Wherein R 1 to R 10 and m 0 have the same meanings as described above), 50% by weight or more of the tetranuclear compound, a low molecular weight component having a smaller molecular weight than the tetranuclear compound. A positive resist composition comprising 10% by weight or less (including unreacted methylol compound and phenols) and 40% by weight or less of a high molecular weight component having a higher molecular weight than a tetranuclear compound. .

【0014】一般式(Ia)で示されるメチロール化合
物及び一般式(II)で示されるフェノール類を反応さ
せて得られるノボラック型樹脂は下式
The novolak type resin obtained by reacting the methylol compound represented by the general formula (Ia) and the phenol represented by the general formula (II) is represented by the following formula:

【0015】[0015]

【化13】 [Chemical 13]

【0016】(式中、R1〜R10 は前記の意味を表わし、
0 は0以上の整数を表わす。)で示され、一般式(I
b)で示されるメチロール化合物及び一般式(II)で
示されるフェノール類を反応させて得られるノボラック
型樹脂は下式
(In the formula, R 1 to R 10 have the above-mentioned meanings,
n 0 represents an integer of 0 or more. ), The general formula (I
The novolac type resin obtained by reacting the methylol compound represented by b) and the phenol represented by the general formula (II) is represented by the following formula:

【0017】[0017]

【化14】 [Chemical 14]

【0018】〔式中、R3 〜R10及びn0 は前記の意味
を表わし、Wは下式
[Wherein R 3 to R 10 and n 0 have the above-mentioned meanings, and W is the following formula:

【0019】[0019]

【化15】 [Chemical 15]

【0020】(式中、m0 は前記の意味を表わす)で示
される基を表わす。〕で示される。
(In the formula, m 0 represents the above-mentioned meaning). ] Is shown.

【0021】一般式(Ia)及び(Ib)においてR3
〜R6 の中少なくとも1つは水酸基であることが好まし
く、当該水酸基のo−又はp−位の中少なくとも1つは
炭素数6以下の鎖状(直鎖又は分岐状)のアルキル基で
あることがより好ましい。メチロール化合物としては一
般式(Ia)で示される化合物が好ましく、特に好まし
いメチロール化合物としては例えば下式(c)
In the general formulas (Ia) and (Ib), R 3
At least one of R 6 to R 6 is preferably a hydroxyl group, and at least one of the o- or p-positions of the hydroxyl group is a chain (linear or branched) alkyl group having 6 or less carbon atoms. Is more preferable. The methylol compound is preferably a compound represented by the general formula (Ia), and a particularly preferable methylol compound is, for example, the following formula (c).

【0022】[0022]

【化16】 [Chemical 16]

【0023】等が挙げられる。一般式(II)で示され
るフェノール類としては、例えばフェノール、o−クレ
ゾール、m−クレゾール、p−クレゾール、2,5−キ
シレノール、2,3−キシレノール、2,4−キシレノ
ール、3,4−キシレノール、3,5−キシレノール、
2,6−キシレノール、2,3,5−トリメチルフェノ
ール、2,3,6−トリメチルフェノール、2−t−ブ
チル−5−メチルフェノール、2−i−プロピル−5−
メチルフェノール、2−シクロヘキシル−5−メチルフ
ェノール、レゾルシノール、2−メチルレゾルシノー
ル、カテコール及びピロガロール等が挙げられる。好ま
しいフェノール類としては例えばフェノール、クレゾー
ル及びキシレノール等が挙げられ、特に好ましいフェノ
ール類としてはフェノール、m−クレゾール、p−クレ
ゾール、2,5−キシレノール、2,6−キシレノール
及び3,5−キシレノールからなる群から選ばれる少な
くとも1種のフェノールが挙げられる。酸触媒として
は、例えばp−トルエンスルホン酸等の有機酸及び無機
酸(塩酸、硫酸等)が挙げられる。一般式(Ia)又は
(Ib)で示されるメチロール化合物及び一般式(I
I)で示されるフェノール類の反応は好ましくは低級脂
肪族アルコール(メタノール、エタノール等)等の有機
溶媒の存在下に行われる。反応温度は好ましくは10〜60
℃であり、メチロール化合物、フェノール類及び酸触媒
の使用量並びに反応時間は適宜設定される。
And the like. Examples of the phenols represented by the general formula (II) include phenol, o-cresol, m-cresol, p-cresol, 2,5-xylenol, 2,3-xylenol, 2,4-xylenol, 3,4-. Xylenol, 3,5-xylenol,
2,6-xylenol, 2,3,5-trimethylphenol, 2,3,6-trimethylphenol, 2-t-butyl-5-methylphenol, 2-i-propyl-5-
Examples thereof include methylphenol, 2-cyclohexyl-5-methylphenol, resorcinol, 2-methylresorcinol, catechol and pyrogallol. Preferable phenols include, for example, phenol, cresol and xylenol, and particularly preferable phenols include phenol, m-cresol, p-cresol, 2,5-xylenol, 2,6-xylenol and 3,5-xylenol. At least one phenol selected from the group consisting of Examples of the acid catalyst include organic acids such as p-toluenesulfonic acid and inorganic acids (hydrochloric acid, sulfuric acid, etc.). A methylol compound represented by the general formula (Ia) or (Ib) and a general formula (I
The reaction of the phenols represented by I) is preferably carried out in the presence of an organic solvent such as a lower aliphatic alcohol (methanol, ethanol, etc.). The reaction temperature is preferably 10 to 60
C., and the amounts of the methylol compound, phenols and acid catalyst used, and the reaction time are appropriately set.

【0024】一般式(IIIa)又は(IIIb)で示
される4核体化合物を含む、前記式で示されるノボラッ
ク型樹脂としては上記4核体化合物を75重量%以上含む
ものが好ましい。当該樹脂中の4核体化合物よりも分子
量の小さい低分子量成分の含有量は好ましくは5重量%
以下であり、同じく4核体化合物よりも分子量の大きい
高分子量成分の含有量は好ましくは25重量%以下であ
る。4核体化合物としては一般式(IIIa)で示され
る化合物が好ましく、より好ましい4核体化合物として
は例えば下式(d)
As the novolak type resin represented by the above formula, which contains the tetranuclear compound represented by the general formula (IIIa) or (IIIb), one containing 75% by weight or more of the tetranuclear compound is preferable. The content of the low molecular weight component having a smaller molecular weight than the tetranuclear compound in the resin is preferably 5% by weight.
Similarly, the content of the high molecular weight component having a higher molecular weight than that of the tetranuclear compound is preferably 25% by weight or less. The tetranuclear compound is preferably a compound represented by the general formula (IIIa), and more preferable tetranuclear compounds include, for example, the following formula (d)

【0025】[0025]

【化17】 [Chemical 17]

【0026】で示される化合物等が挙げられる。Examples thereof include compounds represented by

【0027】1,2−ナフトキノンジアジドスルホン酸
エステルは前記式で示されるノボラック型樹脂と、1,
2−ナフトキノンジアジド−5−(又は−4−)スルホ
ン酸クロリドとを、例えば有機塩基(トリエチルアミン
及びピリジン等)等の存在下に反応させることにより製
造することができる。
The 1,2-naphthoquinone diazide sulfonic acid ester is a novolac type resin represented by the above formula,
It can be produced by reacting 2-naphthoquinonediazide-5- (or-4-) sulfonic acid chloride in the presence of, for example, an organic base (triethylamine, pyridine, etc.) and the like.

【0028】アルカリ可溶性ノボラック樹脂としては、
例えば、o−クレゾール、m−クレゾール、p−クレゾ
ール、2,5−キシレノール、3,5−キシレノール、
3,4−キシレノール、2,3,5−トリメチルフェノ
ール、2−i−プロピル−5−メチルフェノール、2−
シクロヘキシル−5−メチルフェノール及び2−t−ブ
チル−5−メチルフェノール等から選ばれる1種のフェ
ノール化合物又は2種以上の混合物と、脂肪族アルデヒ
ド(ホルムアルデヒド、アセトアルデヒド及びグリオキ
サール等)及び芳香族アルデヒド(ベンズアルデヒド及
びサリチルアルデヒド等)から選ばれる1種のアルデヒ
ド類又は2種以上の混合物とを、有機酸(蓚酸、酢酸及
びp−トルエンスルホン酸等)、無機酸(塩酸、硫酸及
び燐酸等)及び二価金属塩(酢酸亜鉛等)から選ばれる
触媒の存在下、反応溶媒の共存下に又は反応溶媒を使用
せずに、縮合させて得られる樹脂が挙げられる。好まし
いアルデヒド類としてはホルムアルデヒド等が挙げられ
る。縮合反応は通常、60〜120 ℃の温度で約2〜約30時
間行われる。縮合により得られたアルカリ可溶性ノボラ
ック樹脂はスカムの観点から、好ましくは、分別等の操
作を加えてポリスチレン換算分子量900 以下の成分の面
積がGPC パターン(uv254nm 検出器を使用)におい
て、未反応のフェノール化合物の面積を除く全面積に対
して25%以下(より好ましくは20%以下)にすることが
できる。分別は縮合により得られたアルカリ可溶性ノボ
ラック樹脂を、例えばアルコール(メタノール及びエタ
ノール等)、ケトン(アセトン、メチルエチルケトン及
びメチルイソブチルケトン等)、エチレングリコールエ
ーテル類、エーテルエステル類(エチルセロソルブアセ
テート等)及びエーテル類(テトラヒドロフラン等)等
の良溶媒に溶解し、次いで得られた溶液を水中に注いで
沈澱させる方法、或いは当該溶液をペンタン、ヘキサン
及びヘプタン等の溶媒と混合して分液させる方法等によ
り行われる。前記感光剤及び分別後のアルカリ可溶性ノ
ボラック樹脂に加えて、さらに、フェノール性水酸基を
2個以上有する分子量900 未満のアルカリ可溶性化合物
を添加したポジ型レジスト組成物が、各種性能の観点か
ら特に好ましい。好ましいアルカリ可溶性化合物として
は、例えばアンチゲンW、一般式(IV)
As the alkali-soluble novolac resin,
For example, o-cresol, m-cresol, p-cresol, 2,5-xylenol, 3,5-xylenol,
3,4-xylenol, 2,3,5-trimethylphenol, 2-i-propyl-5-methylphenol, 2-
One phenol compound selected from cyclohexyl-5-methylphenol, 2-t-butyl-5-methylphenol and the like, or a mixture of two or more kinds thereof, an aliphatic aldehyde (formaldehyde, acetaldehyde, glyoxal and the like) and an aromatic aldehyde ( Benzaldehyde, salicylaldehyde, etc.) and an organic acid (oxalic acid, acetic acid, p-toluenesulfonic acid, etc.), an inorganic acid (hydrochloric acid, sulfuric acid, phosphoric acid, etc.) A resin obtained by condensation in the presence of a catalyst selected from valent metal salts (zinc acetate, etc.) in the presence of a reaction solvent or without using a reaction solvent can be mentioned. Formaldehyde etc. are mentioned as a preferable aldehyde. The condensation reaction is usually performed at a temperature of 60 to 120 ° C. for about 2 to about 30 hours. From the viewpoint of scum, the alkali-soluble novolac resin obtained by condensation is preferably subjected to an operation such as fractionation so that the area of the component having a polystyrene equivalent molecular weight of 900 or less is unreacted phenol in the GPC pattern (using a uv254nm detector). It can be 25% or less (more preferably 20% or less) with respect to the total area excluding the area of the compound. Alkali-soluble novolak resins obtained by condensation are used for separation, for example, alcohols (methanol and ethanol, etc.), ketones (acetone, methyl ethyl ketone, methyl isobutyl ketone, etc.), ethylene glycol ethers, ether esters (ethyl cellosolve acetate, etc.) and ethers. Dissolve in a good solvent such as compounds (tetrahydrofuran) and then pour the obtained solution into water to precipitate it, or mix the solution with a solvent such as pentane, hexane and heptane to separate the solution. Be seen. A positive resist composition in which an alkali-soluble compound having two or more phenolic hydroxyl groups and a molecular weight of less than 900 is further added to the photosensitizer and the separated alkali-soluble novolac resin is particularly preferable from the viewpoint of various performances. Preferred alkali-soluble compounds include, for example, Antigen W and general formula (IV)

【0029】[0029]

【化18】 [Chemical 18]

【0030】(式中、R11は水素原子又は炭素数6以下
の鎖状アルキル基を表わし、R12〜R 17は水素原子又は
炭素数6以下の鎖状もしくは環状アルキル基を表わし、
pは0又は1を表わす。)で示される化合物、及び下式
(In the formula, R11Is a hydrogen atom or a carbon number of 6 or less
Represents a chain alkyl group of12~ R 17Is a hydrogen atom or
Represents a chain or cyclic alkyl group having 6 or less carbon atoms,
p represents 0 or 1. ) A compound represented by

【0031】[0031]

【化19】 [Chemical 19]

【0032】で示される化合物等が挙げられる。上記ア
ルカリ可溶性化合物を添加する場合、より好ましい添加
量はポジ型レジスト組成物の全固形分中、3〜40重量%
である。又、感光剤の好ましい使用量はポジ型レジスト
組成物の全固形分中、10〜50重量%である。レジスト液
の調製は前述した固形分を、適当な乾燥速度を有し、溶
剤が蒸発したときに均一で平滑な塗膜を与えるレジスト
溶剤と混合することにより行われる。このような溶剤と
しては、例えばエチルセロソルブアセテート、プロピレ
ングリコールモノメチルアセテート、酢酸n−アミル、
乳酸エチル、2−ヘプタノン及びγ−ブチロラクトン等
が挙げられる。
Examples thereof include compounds represented by: When the above alkali-soluble compound is added, a more preferable amount is 3 to 40% by weight based on the total solid content of the positive resist composition.
Is. The preferred amount of the photosensitizer used is 10 to 50% by weight based on the total solid content of the positive resist composition. The resist solution is prepared by mixing the above-mentioned solid content with a resist solvent which has an appropriate drying rate and gives a uniform and smooth coating film when the solvent evaporates. Examples of such a solvent include ethyl cellosolve acetate, propylene glycol monomethyl acetate, n-amyl acetate,
Examples thereof include ethyl lactate, 2-heptanone and γ-butyrolactone.

【0033】[0033]

【発明の効果】本発明のポジ型レジスト組成物は感度、
解像度、γ値、耐熱性、プロファイル及び焦点深度等の
諸性能のバランスに優れ、しかもスカムがない。
The positive resist composition of the present invention has sensitivity,
Excellent balance of performance such as resolution, γ value, heat resistance, profile and depth of focus, and no scum.

【0034】[0034]

【実施例】次に実施例を挙げて本発明をさらに具体的に
説明する。例中、部は重量部を示す。
EXAMPLES Next, the present invention will be described more specifically with reference to examples. In the examples, “part” means “part by weight”.

【0035】合成例1 ビスフェノールC69.1g 、苛性ソーダ25.9g 及び水476g
の混合物に37%ホルマリン130.8gを室温で2時間かけて
滴下した。滴下終了後、同温度で4時間攪拌した。次い
で、氷酢酸46.7g を加えて30分攪拌した。酢酸エチル30
0gを添加後、得られた混合物をイオン交換水で6回洗浄
し、洗浄後に得られた油層をエバポレーターで濃縮して
酢酸エチルを留出させた。得られた濃縮残さにメタノー
ル1L を加えた後、全量が200gになるまでエバポレータ
ーで濃縮して前記式(c)で示されるメチロール化合物
のメタノール溶液を得た。
Synthesis Example 1 Bisphenol C 69.1 g, caustic soda 25.9 g and water 476 g
130.8 g of 37% formalin was added dropwise to the mixture at room temperature over 2 hours. After completion of dropping, the mixture was stirred at the same temperature for 4 hours. Then, 46.7 g of glacial acetic acid was added and stirred for 30 minutes. Ethyl acetate 30
After adding 0 g, the obtained mixture was washed 6 times with ion-exchanged water, and the oil layer obtained after washing was concentrated with an evaporator to distill off ethyl acetate. 1 L of methanol was added to the obtained concentrated residue, and then concentrated by an evaporator until the total amount became 200 g to obtain a methanol solution of the methylol compound represented by the above formula (c).

【0036】合成例2 2,5−キシレノール303g、p−トルエンスルホン酸2
3.6g 及びメタノール302gの混合物中に約35℃で合成例
1で得たメタノール溶液を滴下した。滴下終了後、同温
度で10時間攪拌した。トルエン600gを添加後、水洗し、
次いで油層をエバポレーターで濃縮した。得られた残さ
を濾過後、攪拌しながら、濾液をn−ヘプタン1Kg中に
滴下した。析出物をトルエンに溶解し、n−ヘプタン60
0g中に攪拌しながら滴下した。析出物を濾過後、濾上物
をn−ヘプタンで洗浄し、次いで乾燥してノボラック型
樹脂A28.6g を得た。GPC 分析(uv254nm 検出器を使
用)の結果、前記式(d)で示される4核体化合物の含
有量は86.5%であり、高分子量成分の含有量は13.4%で
あり、低分子量成分の含有量は0.1 %であった。
Synthesis Example 2 303 g of 2,5-xylenol, p-toluenesulfonic acid 2
The methanol solution obtained in Synthesis Example 1 was added dropwise to a mixture of 3.6 g and 302 g of methanol at about 35 ° C. After the completion of dropping, the mixture was stirred at the same temperature for 10 hours. After adding 600 g of toluene, wash with water,
Then the oil layer was concentrated by an evaporator. After filtering the obtained residue, the filtrate was added dropwise to 1 kg of n-heptane while stirring. The precipitate is dissolved in toluene and n-heptane 60 is added.
It was added dropwise to 0 g with stirring. After filtering the precipitate, the product on the filter was washed with n-heptane and then dried to obtain 28.6 g of novolac type resin A. As a result of GPC analysis (using a uv254nm detector), the content of the tetranuclear compound represented by the formula (d) was 86.5%, the content of the high molecular weight component was 13.4%, and the content of the low molecular weight component was The amount was 0.1%.

【0037】合成例3 o−クレゾール268.6g、p−トルエンスルホン酸23.6g
及びメタノール302gの混合物中に約35℃で合成例1と同
様にして得たメタノール溶液を滴下した。滴下終了後、
同温度で10時間攪拌した。酢酸エチル600gを添加し、水
洗後にトルエン1Kgを加えてエバポレーターで濃縮し
た。得られた残さをn−ヘプタン1Kg中に攪拌しながら
滴下した。析出物をトルエンに溶解し、以後、合成例2
と同様にしてノボラック型樹脂Bの81.48gを得た。分析
の結果、下式(e)で示される4核体化合物の含有量は
84.9%であり、高分子量成分の含有量は15.0%であり、
低分子量成分の含有量は0.1 %であった。
Synthesis Example 3 268.6 g of o-cresol, 23.6 g of p-toluenesulfonic acid
A methanol solution obtained in the same manner as in Synthesis Example 1 was added dropwise to a mixture of and 302 g of methanol at about 35 ° C. After the dropping is completed,
The mixture was stirred at the same temperature for 10 hours. After adding 600 g of ethyl acetate and washing with water, 1 kg of toluene was added and the mixture was concentrated with an evaporator. The obtained residue was added dropwise to 1 Kg of n-heptane while stirring. The precipitate was dissolved in toluene, and thereafter, Synthesis Example 2
In the same manner as above, 81.48 g of novolak type resin B was obtained. As a result of the analysis, the content of the tetranuclear compound represented by the following formula (e) is
84.9%, the content of high molecular weight component is 15.0%,
The content of low molecular weight components was 0.1%.

【0038】[0038]

【化20】 [Chemical 20]

【0039】合成例4 フェノール233.8g、p−トルエンスルホン酸23.6g 及び
メタノール302gの混合物中に約35℃で合成例1と同様に
して得たメタノール溶液を滴下した。滴下終了後、50℃
で10時間攪拌し、次いでトルエン600gを添加した。70℃
で水洗後、油層を濃縮した。濃縮残さにメタノール1Kg
を添加後、濃縮し、次いで得られた残さを水1Kg中に攪
拌しながら滴下した。得られた析出物をメタノールで希
釈後、水600g中に攪拌しながら滴下した。得られた析出
物を水及びメタノールの混合液(3:1)で洗浄後、乾
燥してノボラック型樹脂Cの78.5g を得た。分析の結
果、下式(f)で示される4核体化合物の含有量は77.2
%であり、高分子量成分の含有量は22.7%であり、低分
子量成分の含有量は0.1 %であった。
Synthesis Example 4 To a mixture of 233.8 g of phenol, 23.6 g of p-toluenesulfonic acid and 302 g of methanol, a methanol solution obtained in the same manner as in Synthesis Example 1 was added dropwise at about 35 ° C. 50 ° C after dropping
The mixture was stirred for 10 hours and then 600 g of toluene was added. 70 ° C
After washing with water, the oil layer was concentrated. 1Kg of methanol in the concentrated residue
Was added and the mixture was concentrated, and the obtained residue was added dropwise to 1 Kg of water with stirring. The obtained precipitate was diluted with methanol and then added dropwise to 600 g of water while stirring. The obtained precipitate was washed with a mixed solution of water and methanol (3: 1) and then dried to obtain 78.5 g of novolac type resin C. As a result of the analysis, the content of the tetranuclear compound represented by the following formula (f) was 77.2.
%, The content of high molecular weight components was 22.7%, and the content of low molecular weight components was 0.1%.

【0040】[0040]

【化21】 [Chemical 21]

【0041】合成例5 合成例2で得たノボラック型樹脂A3g、1,2−ナフ
トキノンジアジド−5−スルホン酸クロリド3.4g及びジ
オキサン32.2g の混合物中にトリエチルアミン1.5gを20
〜30℃で1時間かけて滴下し、次いで30℃で7時間攪拌
した。さらに、酢酸1gを添加し、同温度で1時間攪拌
した後、反応混合物を濾過し、得られた濾上物をジオキ
サン5gで洗浄した。濾洗液を酢酸1.9gを含むイオン交
換水300g中に注ぎ、次いで1時間攪拌した。析出物を濾
過し、濾上物をイオン交換水300g中で攪拌しながら洗浄
した。濾過後の結晶を40℃で乾燥して感光剤Dを得た。
Synthesis Example 5 In a mixture of 3 g of the novolak type resin A obtained in Synthesis Example 2, 3.4 g of 1,2-naphthoquinonediazide-5-sulfonic acid chloride and 32.2 g of dioxane, 1.5 g of triethylamine was added.
The solution was added dropwise at -30 ° C over 1 hour and then stirred at 30 ° C for 7 hours. Furthermore, 1 g of acetic acid was added, and the mixture was stirred at the same temperature for 1 hour. Then, the reaction mixture was filtered, and the obtained filtered product was washed with 5 g of dioxane. The filter washing solution was poured into 300 g of ion-exchanged water containing 1.9 g of acetic acid, and then stirred for 1 hour. The precipitate was filtered, and the product on the filter was washed in 300 g of ion-exchanged water while stirring. The crystals after filtration were dried at 40 ° C. to obtain a photosensitizer D.

【0042】合成例6 合成例3で得たノボラック型樹脂B2g、1,2−ナフ
トキノンジアジド−5−スルホン酸クロリド2.7g及びジ
オキサン23.5g の混合物中にトリエチルアミン1.2gを20
〜30℃で1時間かけて滴下し、次いで30℃で7時間攪拌
した。さらに、酢酸1gを添加し、同温度で1時間攪拌
した後、反応混合物を濾過し、得られた濾上物をジオキ
サン5gで洗浄した。濾洗液を酢酸1.4gを含むイオン交
換水400g中に注ぎ、次いで1時間攪拌した。析出物を濾
過し、濾上物をイオン交換水300g中で攪拌しながら洗浄
した。濾過後の結晶を40℃で乾燥して感光剤Eを得た。 合成例7 合成例4で得たノボラック型樹脂C9g、1,2−ナフ
トキノンジアジド−5−スルホン酸クロリド9.4g及びジ
オキサン92.1g の混合物中にトリエチルアミン4.3gを20
〜30℃で1時間かけて滴下し、次いで30℃で7時間攪拌
した。さらに、酢酸1.5 gを添加し、同温度で1時間攪
拌した後、反応混合物を濾過し、得られた濾上物をジオ
キサン9.4 gで洗浄した。濾洗液を酢酸5.1gを含むイオ
ン交換水508g中に注ぎ、次いで1時間攪拌した。析出物
を濾過し、濾上物をイオン交換水648g中で攪拌しながら
洗浄後、合成例6と同様にして感光剤Fを得た。
Synthetic Example 6 1.2 g of triethylamine was added to a mixture of 2 g of the novolak type resin B obtained in Synthetic Example 3, 2.7 g of 1,2-naphthoquinonediazide-5-sulfonic acid chloride and 23.5 g of dioxane.
The solution was added dropwise at -30 ° C over 1 hour and then stirred at 30 ° C for 7 hours. Furthermore, 1 g of acetic acid was added, and the mixture was stirred at the same temperature for 1 hour. Then, the reaction mixture was filtered, and the obtained filtered product was washed with 5 g of dioxane. The filter washing solution was poured into 400 g of ion-exchanged water containing 1.4 g of acetic acid, and then stirred for 1 hour. The precipitate was filtered, and the product on the filter was washed in 300 g of ion-exchanged water while stirring. The crystals after filtration were dried at 40 ° C. to obtain a photosensitizer E. Synthetic Example 7 In a mixture of 9 g of the novolak type resin C obtained in Synthetic Example 4, 9.4 g of 1,2-naphthoquinonediazide-5-sulfonic acid chloride and 92.1 g of dioxane, 4.3 g of triethylamine was added.
The solution was added dropwise at -30 ° C over 1 hour and then stirred at 30 ° C for 7 hours. Further, 1.5 g of acetic acid was added, and the mixture was stirred at the same temperature for 1 hour. Then, the reaction mixture was filtered, and the obtained filtered product was washed with 9.4 g of dioxane. The filter washing solution was poured into 508 g of ion-exchanged water containing 5.1 g of acetic acid, and then stirred for 1 hour. The precipitate was filtered, and the filter cake was washed with 648 g of ion-exchanged water while stirring, and then a photosensitizer F was obtained in the same manner as in Synthesis Example 6.

【0043】合成例8 m−クレゾール148.5g、p−クレゾール121.5g、メチル
イソブチルケトン252g、10%蓚酸37g 及び90%酢酸84.8
g の混合物に37%ホルマリン129.5gを100 ℃で40分かけ
て滴下した。滴下終了後、同温度で15時間反応させた。
冷却後、水洗し、次いで脱水してノボラック樹脂のメチ
ルイソブチルケトン溶液(樹脂分42.3%)を得た。GPC
によるポリスチレン換算重量平均分子量は4300であっ
た。上記溶液450g、メチルイソブチルケトン910g及びn
−ヘプタン996gの混合物を60℃で30分攪拌後、放置し、
次いで分液した。得られた下層に2−ヘプタノン380gを
添加後、メチルイソブチルケトン及びn−ヘプタンをエ
バポレーターで除去してノボラック樹脂Gの2−ヘプタ
ノン溶液を得た。GPC によるポリスチレン換算重量平均
分子量は9000であり、分子量900 以下の成分の面積はm
−クレゾール及びp−クレゾールを除く全面積に対して
17%であった。
Synthesis Example 8 m-cresol 148.5 g, p-cresol 121.5 g, methyl isobutyl ketone 252 g, 10% oxalic acid 37 g and 90% acetic acid 84.8.
129.5 g of 37% formalin was added dropwise to the mixture of g at 100 ° C. over 40 minutes. After the dropping was completed, the reaction was carried out at the same temperature for 15 hours.
After cooling, it was washed with water and then dehydrated to obtain a solution of novolac resin in methyl isobutyl ketone (resin content: 42.3%). GPC
The polystyrene-reduced weight average molecular weight was 4,300. 450 g of the above solution, 910 g of methyl isobutyl ketone and n
Stirring the mixture of 996 g of heptane at 60 ° C. for 30 minutes, then allowing it to stand,
Then, the layers were separated. After adding 380 g of 2-heptanone to the obtained lower layer, methyl isobutyl ketone and n-heptane were removed by an evaporator to obtain a 2-heptanone solution of novolak resin G. The polystyrene-converted weight average molecular weight by GPC is 9000, and the area of components with a molecular weight of 900 or less is m.
-For all areas except cresol and p-cresol
It was 17%.

【0044】実施例(例番号1〜3) 合成例8で得たノボラック樹脂G、感光剤及び下式で示
される添加剤Hを下表に示す組成で2−ヘプタノンが50
部になるように混合後、孔径0.2 μmのフィルターで濾
過してレジスト液を調製した。
Examples (Example Nos. 1 to 3) The novolak resin G obtained in Synthesis Example 8, the photosensitizer, and the additive H represented by the following formula had the composition shown in the following table and 50 parts of 2-heptanone.
After mixing so as to form parts, a resist solution was prepared by filtering with a filter having a pore size of 0.2 μm.

【0045】[0045]

【化22】 [Chemical formula 22]

【0046】常法により洗浄したシリコンウエハーにス
ピンナーを用いて上記レジスト液を1.1 μm厚に塗布
し、ホットプレートで90℃・1分ベークした。次いで36
5nm(i線)の露光波長を有する縮小投影露光器(ニコンN
SR1755i7A NA =0.5 )で露光量を段階的に変化させて
露光した。次にホットプレートで110 ℃・1分ベークし
た。次いで、アルカリ性現像液SOPD〔住友化学工業
(株)製〕で1分現像してポジ型パターンを得た。感度
は50μmのラインアンドスペースパターンが1:1にな
る露光量で測定した。解像度は実効感度で膜減り無く分
離するラインアンドスペースパターンの寸法を走査型電
子顕微鏡で観察した。プロファイル及びスカムは実効感
度における0.45μmラインアンドスペースパターンの断
面形状を走査型電子顕微鏡で観察した。耐熱性は124 ℃
のホットプレート上で5分加熱し、レジストパターンの
ダレ具合を5段階で評価した(5は最良であり、1は最
悪である)。焦点深度は実効感度における0.40μmライ
ンアンドスペースパターンが膜減り無く分離する焦点の
幅を走査型電子顕微鏡で観察した。
A silicon wafer washed by a conventional method was coated with the above resist solution to a thickness of 1.1 μm using a spinner and baked at 90 ° C. for 1 minute on a hot plate. Then 36
Reduction projection exposure tool with exposure wavelength of 5 nm (i-line) (Nikon N
SR1755i7A NA = 0.5) was used to change the exposure amount stepwise. Then, it was baked on a hot plate at 110 ° C. for 1 minute. Then, it was developed with an alkaline developer SOPD [Sumitomo Chemical Co., Ltd.] for 1 minute to obtain a positive pattern. The sensitivity was measured by the exposure amount at which the line and space pattern of 50 μm became 1: 1. The resolution was the effective sensitivity, and the dimensions of the line-and-space pattern that separated without film loss were observed with a scanning electron microscope. As for the profile and scum, the cross-sectional shape of the 0.45 μm line-and-space pattern in effective sensitivity was observed with a scanning electron microscope. Heat resistance is 124 ° C
Was heated on a hot plate for 5 minutes and the degree of sagging of the resist pattern was evaluated on a scale of 5 (5 is the best, 1 is the worst). Regarding the depth of focus, the width of the focus at which the 0.40 μm line-and-space pattern at the effective sensitivity is separated without film loss was observed with a scanning electron microscope.

【0047】[0047]

【表1】 [Table 1]

───────────────────────────────────────────────────── フロントページの続き (72)発明者 上谷 保則 大阪府大阪市此花区春日出中3丁目1番98 号 住友化学工業株式会社内 (72)発明者 高田 佳幸 大阪府大阪市此花区春日出中3丁目1番98 号 住友化学工業株式会社内 (72)発明者 尾崎 晴喜 大阪府大阪市此花区春日出中3丁目1番98 号 住友化学工業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Yasunori Uetani 3-98 Kasugade, Konohana-ku, Osaka City, Osaka Prefecture Sumitomo Chemical Co., Ltd. (72) Inventor Yoshiyuki Takada Kasuga, Konohana-ku, Osaka City, Osaka Prefecture 3-3-198 Naka Sumitomo Chemical Co., Ltd. (72) Inventor Haruki Ozaki 3-1-198 Kasuga, Konohana-ku, Osaka City, Osaka Prefecture Sumitomo Chemical Co., Ltd.

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】感光剤及びアルカリ可溶性ノボラック樹脂
を含むポジ型レジスト組成物であって、上記感光剤が一
般式(Ia)又は(Ib) 【化1】 (式中、R1 及びR2 は各々独立して炭素数6以下の鎖
状のアルコキシ基、炭素数6以下の鎖状もしくは環状の
アルキル基、水素原子、又は水酸基、炭素数6以下の鎖
状のアルコキシ基及び炭素数6以下の鎖状もしくは環状
のアルキル基からなる群から選ばれる1種以上の置換基
を有してもよいフェニル基を表わし、R3〜R6 は各々
独立して水酸基、水素原子、炭素数6以下の鎖状のアル
コキシ基又は炭素数6以下の鎖状もしくは環状のアルキ
ル基を表わし、m0 は0〜6の整数を表わす。)で示さ
れるメチロール化合物及び一般式(II) 【化2】 (式中、R7 〜R10は各々独立して水酸基、水素原子、
炭素数6以下の鎖状のアルコキシ基又は炭素数6以下の
鎖状もしくは環状のアルキル基を表わす。)で示される
フェノール類を酸触媒の存在下に反応させて得られるノ
ボラック型樹脂の1,2−ナフトキノンジアジドスルホ
ン酸エステルであり、且つ、上記ノボラック型樹脂が一
般式(IIIa)又は(IIIb) 【化3】 【化4】 (式中、R1 〜R10及びm0 は上記と同じ意味であ
る。)で示される4核体化合物の50重量%以上、当該4
核体化合物よりも分子量の小さい低分子量成分(未反応
のメチロール化合物及びフェノール類を含む)の10重量
%以下、及び4核体化合物よりも分子量の大きい高分子
量成分の40重量%以下からなることを特徴とするポジ型
レジスト組成物。
1. A positive resist composition containing a photosensitizer and an alkali-soluble novolac resin, wherein the photosensitizer is represented by the general formula (Ia) or (Ib): (In the formula, R 1 and R 2 are each independently a chain alkoxy group having 6 or less carbon atoms, a chain or cyclic alkyl group having 6 or less carbon atoms, a hydrogen atom, or a hydroxyl group, a chain having 6 or less carbon atoms. Represents a phenyl group optionally having one or more substituents selected from the group consisting of a linear alkoxy group and a chain or cyclic alkyl group having 6 or less carbon atoms, and R 3 to R 6 are each independently A hydroxyl group, a hydrogen atom, a chain-like alkoxy group having 6 or less carbon atoms or a chain-like or cyclic alkyl group having 6 or less carbon atoms, and m 0 represents an integer of 0 to 6) and general Formula (II): (In the formula, R 7 to R 10 are each independently a hydroxyl group, a hydrogen atom,
It represents a chain alkoxy group having 6 or less carbon atoms or a chain or cyclic alkyl group having 6 or less carbon atoms. ) Is a 1,2-naphthoquinonediazide sulfonic acid ester of a novolak type resin obtained by reacting a phenol represented by the formula (1) in the presence of an acid catalyst, and the novolak type resin is represented by the general formula (IIIa) or (IIIb). [Chemical 3] [Chemical 4] (In the formula, R 1 to R 10 and m 0 have the same meanings as described above.) 50% by weight or more of the tetranuclear compound represented by
Consist of less than 10% by weight of low molecular weight components (including unreacted methylol compounds and phenols) having a lower molecular weight than nucleoside compounds, and 40% by weight or less of high molecular weight components having a greater molecular weight than tetranuclear compounds A positive resist composition comprising:
【請求項2】アルカリ可溶性ノボラック樹脂が、そのGP
C パターンにおけるポリスチレン換算分子量で900 以下
の範囲の面積比が未反応フェノール化合物のパターン面
積を除く全パターン面積に対して25%以下である、請求
項1に記載のポジ型レジスト組成物。
2. An alkali-soluble novolak resin is a GP thereof.
The positive resist composition according to claim 1, wherein the area ratio in the range of 900 or less in terms of polystyrene equivalent molecular weight in the C pattern is 25% or less with respect to the total pattern area excluding the pattern area of the unreacted phenol compound.
【請求項3】さらに、フェノール性水酸基を2個以上有
する分子量900 未満のアルカリ可溶性化合物を含む、請
求項1又は2に記載のポジ型レジスト組成物。
3. The positive resist composition according to claim 1, further comprising an alkali-soluble compound having two or more phenolic hydroxyl groups and a molecular weight of less than 900.
【請求項4】フェノール性水酸基を2個以上有する分子
量900 未満のアルカリ可溶性化合物が一般式(IV) 【化5】 (式中、R11は水素原子又は炭素数6以下の鎖状アルキ
ル基を表わし、R12〜R 17は水素原子又は炭素数6以下
の鎖状もしくは環状アルキル基を表わし、pは0又は1
を表わす。)で示される化合物である、請求項3に記載
のポジ型レジスト組成物。
4. A molecule having two or more phenolic hydroxyl groups.
An alkali-soluble compound having an amount of less than 900 is represented by the general formula (IV):(In the formula, R11Is a hydrogen atom or a chain alkyl group having 6 or less carbon atoms
Represents a group, R12~ R 17Is a hydrogen atom or a carbon number of 6 or less
Represents a chain or cyclic alkyl group of p is 0 or 1
Represents 4. The compound according to claim 3, which is a compound represented by
Positive resist composition.
【請求項5】一般式(Ia)で示されるメチロール化合
物が下式(c) 【化6】 で示される化合物である、請求項1〜4のいずれかに記
載のポジ型レジスト組成物。
5. A methylol compound represented by the general formula (Ia) is represented by the following formula (c): The positive resist composition according to claim 1, which is a compound represented by
【請求項6】一般式(II)で示されるフェノール類が
フェノール、m−クレゾール、p−クレゾール、2,5
−キシレノール、2,6−キシレノール及び3,5−キ
シレノールからなる群から選ばれる少なくとも1種のフ
ェノールである、請求項1〜5のいずれかに記載のポジ
型レジスト組成物。
6. Phenols represented by the general formula (II) are phenol, m-cresol, p-cresol and 2,5.
The positive resist composition according to claim 1, which is at least one phenol selected from the group consisting of -xylenol, 2,6-xylenol and 3,5-xylenol.
【請求項7】一般式(IIIa)で示される4核体化合
物が下式(d) 【化7】 で示される化合物である、請求項1〜6のいずれかに記
載のポジ型レジスト組成物。
7. A tetranuclear compound represented by the general formula (IIIa) is represented by the following formula (d): The positive resist composition according to claim 1, which is a compound represented by
JP11129994A 1994-05-25 1994-05-25 Positive resist composition Expired - Fee Related JP3443935B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11129994A JP3443935B2 (en) 1994-05-25 1994-05-25 Positive resist composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11129994A JP3443935B2 (en) 1994-05-25 1994-05-25 Positive resist composition

Publications (2)

Publication Number Publication Date
JPH07319158A true JPH07319158A (en) 1995-12-08
JP3443935B2 JP3443935B2 (en) 2003-09-08

Family

ID=14557707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11129994A Expired - Fee Related JP3443935B2 (en) 1994-05-25 1994-05-25 Positive resist composition

Country Status (1)

Country Link
JP (1) JP3443935B2 (en)

Also Published As

Publication number Publication date
JP3443935B2 (en) 2003-09-08

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