JPH07307108A - Near infrared lighting device - Google Patents

Near infrared lighting device

Info

Publication number
JPH07307108A
JPH07307108A JP9772094A JP9772094A JPH07307108A JP H07307108 A JPH07307108 A JP H07307108A JP 9772094 A JP9772094 A JP 9772094A JP 9772094 A JP9772094 A JP 9772094A JP H07307108 A JPH07307108 A JP H07307108A
Authority
JP
Japan
Prior art keywords
infrared
light source
light
lighting device
near infrared
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9772094A
Other languages
Japanese (ja)
Inventor
Osamu Kawashima
攻 川島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KAWASHIMA KOKI CO Ltd
KAWASHIMA KOKI KK
Original Assignee
KAWASHIMA KOKI CO Ltd
KAWASHIMA KOKI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KAWASHIMA KOKI CO Ltd, KAWASHIMA KOKI KK filed Critical KAWASHIMA KOKI CO Ltd
Priority to JP9772094A priority Critical patent/JPH07307108A/en
Publication of JPH07307108A publication Critical patent/JPH07307108A/en
Pending legal-status Critical Current

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  • Geophysics And Detection Of Objects (AREA)
  • Burglar Alarm Systems (AREA)

Abstract

PURPOSE:To suppress the temperature rise of a near infrared transmission filter disposed in an irradiated surface by using a high-intensity type (short arc type) xenon lamp as the light source of a near infrared lighting device even in a high output light source. CONSTITUTION:A high-intensity type xenon lamp is used for the light source 11 of a near infrared lighting device. A reflecting mirror 12 covered with an optical coating film 13 which reflects only near infrared light of not less than 700nm and transmits light of not more.than 700nm is disposed in the vicinity of the light source 11, and the irradiation of near infrared light is performed through a near infrared transmission filter 5 provided on the opening side of a casing 10.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は近赤外照明装置に係わ
り、特に人が感知不能な近赤外部に強い線スペクトルを
有する大出力の近赤外照明装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a near-infrared illuminating device, and more particularly to a high-power near-infrared illuminating device having a strong line spectrum in the near-infrared portion which cannot be sensed by humans.

【0002】[0002]

【従来の技術】従来から銀行、住宅等の防犯用の撮像カ
メラ等の照明用に侵入者に撮像カメラ位置の存在を認識
させない為に人間が感知不能な近赤外光を被写体位置に
照射する様になした近赤外照明装置が特開昭62−25
5829号公報に開示されて公知である。
2. Description of the Related Art Conventionally, in order to prevent an intruder from recognizing the existence of the position of the image pickup camera for illumination of an image pickup camera for crime prevention in a bank, a house, etc., a near-infrared light which cannot be sensed by a human is irradiated onto the subject position. A near-infrared illuminating device as described above is disclosed in JP-A-62-25.
It is known and disclosed in Japanese Patent No. 5829.

【0003】上述の近赤外照明装置は高圧放電ランプや
高圧ハロゲンランプ等を用いている。この様な従来の近
赤外照明装置内では温度上昇が大きく、フィルターガラ
ス等が変形するので、温度上昇を抑制し、高出力、長寿
命の近赤外照明装置を得る様に成したもので、その構成
を図4を用いて説明する。
The above-mentioned near infrared lighting device uses a high pressure discharge lamp, a high pressure halogen lamp or the like. In such a conventional near-infrared lighting device, the temperature rise is large and the filter glass or the like is deformed, so that the temperature rise is suppressed, and a high-output, long-life near-infrared lighting device is obtained. The configuration will be described with reference to FIG.

【0004】図で1は全体として近赤外照明装置を示
し、2は反射笠であり、この反射笠2は回転軸8を中心
に回動自在となされ、支持台3に枢着されている。4は
光源としてのハロゲンランプを示す。反射笠2の前面側
には近赤外線を透過する近赤外透過フィルタ5を有し、
この近赤外透過フィルタ5の光源4側の後面にコールド
ミラー被膜6が配設され700nm以下の光の波長を反
射し、800nm以上の近赤外光の波長を透過する様に
なされている。7は近赤外透過フィルタ5の前面側に配
設した保護ガラスである。
In the figure, reference numeral 1 denotes a near-infrared illuminating device as a whole, and reference numeral 2 denotes a reflecting shade. The reflecting shade 2 is rotatable around a rotary shaft 8 and is pivotally attached to a support base 3. . Reference numeral 4 denotes a halogen lamp as a light source. A near-infrared transmission filter 5 that transmits near-infrared rays is provided on the front surface side of the reflection shade 2,
A cold mirror coating 6 is provided on the rear surface of the near-infrared transmission filter 5 on the light source 4 side so as to reflect a wavelength of light of 700 nm or less and transmit a wavelength of near-infrared light of 800 nm or more. Reference numeral 7 is a protective glass disposed on the front side of the near infrared transmission filter 5.

【0005】上述の近赤外照明装置1によると、近赤外
線透過フィルタ5の光源4側にコールドミラー6を設け
たので700nm以下の光は光源4側に反射されて、近
赤外透過フィルタ5の温度を300℃以下に抑制可能な
ものが得られる。
According to the near-infrared illuminating device 1 described above, since the cold mirror 6 is provided on the light source 4 side of the near-infrared transmitting filter 5, light of 700 nm or less is reflected to the light source 4 side and the near-infrared transmitting filter 5 The thing which can suppress the temperature of 300 degreeC or less is obtained.

【0006】[0006]

【発明が解決しようとする課題】上述の従来構成で説明
した近赤外照明装置1では光源4としてハロゲンランプ
やナトリウムランプが用いられているが、これらランプ
は光源4が大きく、近赤外光の発光出力等の効率が悪い
問題があった。
In the near-infrared illuminating device 1 described in the above-mentioned conventional configuration, a halogen lamp or a sodium lamp is used as the light source 4, but these lamps have a large light source 4 and near-infrared light. However, there was a problem that the efficiency of the light emission output was poor.

【0007】又、上述の近赤外照明装置では光源のハロ
ゲンランプ4から放射された700nm以下の波長の光
を赤外透過フィルタ5の直前に配置したコールドミラー
被膜6を用いてカットしているが、このコールドミラー
被膜6の反射効率は最大で80%程度であり、従って、
ハロゲンランプ4から放射された20%は近赤外透過フ
ィルタ5に吸収されて、例えば1KWのハロゲンランプ
4を用いても近赤外透過フィルタ5の温度は300℃に
達し、光源を大出力とすることが出来ない問題があっ
た。
Further, in the above-mentioned near-infrared illuminating device, light having a wavelength of 700 nm or less emitted from the halogen lamp 4 of the light source is cut by using the cold mirror film 6 arranged immediately before the infrared transmission filter 5. However, the reflection efficiency of this cold mirror coating 6 is about 80% at maximum, and therefore,
20% emitted from the halogen lamp 4 is absorbed by the near-infrared transmission filter 5, and even if the halogen lamp 4 of 1 kW is used, the temperature of the near-infrared transmission filter 5 reaches 300 ° C., and the light source has a large output. There was a problem that I could not do.

【0008】本発明は叙上の問題点を解消した近赤外照
明装置を提供しようとするもので、大出力の光源を用い
ても近赤外透過フィルタ5の温度上昇を極力低く抑制出
来、集光効率が高く、近赤外発光効率の良好な近赤外照
明装置を得んとするものである。
The present invention is intended to provide a near-infrared illuminating device which solves the above-mentioned problems, and it is possible to suppress the temperature rise of the near-infrared transmitting filter 5 as low as possible even if a high-power light source is used. It is intended to obtain a near-infrared lighting device having high light-collecting efficiency and good near-infrared emission efficiency.

【0009】[0009]

【課題を解決するための手段】本発明の近赤外照明装置
はその例が図1に示される様に、高輝度型キセノンラン
プを用いた光源11と、この光源11の近傍に配され、
該光源11から放射される近赤外光のみ反射し、他の波
長を透過させる光学被膜13の施された反射鏡12と、
光源11及び反射鏡12からの近赤外光のみ透過させる
近赤外透過フィルタ5とを具備してなるものである。
As shown in FIG. 1, the near-infrared lighting device of the present invention has a light source 11 using a high-intensity xenon lamp and a light source 11 disposed near the light source 11.
A reflecting mirror 12 provided with an optical coating 13 that reflects only near-infrared light emitted from the light source 11 and transmits other wavelengths;
It is provided with a near-infrared transmission filter 5 that transmits only near-infrared light from the light source 11 and the reflecting mirror 12.

【0010】[0010]

【作用】本発明の近赤外照明装置は光源として高輝度型
キセノンランプが用いられているため、数ミリと極めて
小さく、点光源に近いため、光学的に集光効率のよいも
のが得られるだけでなく、近赤外部に強い線スペクトラ
ムを有して近赤外の800〜1000nmで大きな発光
が得られる。更に、光源の高輝度型キセノンランプの近
傍に近赤外光のみ反射する反射鏡を用いているため、光
源の前面に配した近赤外線フィルタに吸収される熱線を
極めて少なくすることが出来るので、大容量光源を用い
ても近赤外透過フィルタの温度上昇を極めて低く抑制可
能な近赤外照明装置が得られる。
Since the near-infrared lighting device of the present invention uses a high-intensity type xenon lamp as a light source, it is extremely small, such as a few millimeters, and is close to a point light source, so that an optical condensing efficiency can be obtained. Not only that, it has a strong line spectrum in the near-infrared region, and a large emission can be obtained in the near-infrared region of 800 to 1000 nm. Furthermore, since a reflecting mirror that reflects only near-infrared light is used in the vicinity of the high-intensity xenon lamp of the light source, the heat rays absorbed by the near-infrared filter arranged in front of the light source can be extremely reduced, Even if a large-capacity light source is used, it is possible to obtain a near-infrared lighting device that can suppress the temperature rise of the near-infrared transmission filter to an extremely low level.

【0011】[0011]

【実施例】以下、本発明の近赤外照明装置の一実施例を
図1乃至図3によって説明する。図1は本発明の近赤外
照明装置の一部を切断した側断面並びに裏面図を示すも
のであり、図2は光源として用いられるキセノンランプ
の分光特性図、図3は反射鏡の光学特性図を示してい
る。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the near infrared illumination device of the present invention will be described below with reference to FIGS. FIG. 1 is a side cross-sectional view and a back view of a part of the near-infrared lighting device of the present invention, FIG. 2 is a spectral characteristic diagram of a xenon lamp used as a light source, and FIG. 3 is an optical characteristic of a reflecting mirror. The figure is shown.

【0012】図1によって近赤外照明装置の一実施例を
詳記する。1は全体として、本例の近赤外照明装置を示
すものである。一般に近赤外光としての波長範囲は70
0nm〜3000nm程度であり、本例でもこの波長範
囲の近赤外光を放射する様に成された近赤外照明装置と
して説明を進める。尚、図4との対応部分には同一符号
を付している。
An embodiment of the near infrared illuminating device will be described in detail with reference to FIG. Reference numeral 1 generally indicates the near-infrared lighting device of this example. Generally, the wavelength range as near infrared light is 70
It is about 0 nm to 3000 nm, and the description will proceed in this example as a near-infrared illuminating device configured to emit near-infrared light in this wavelength range. The parts corresponding to those in FIG. 4 are designated by the same reference numerals.

【0013】近赤外照明装置1のケーシング10は金属
を略々漏斗状に形成し、ケーシング10表面から充分に
熱放射が行われる様に、例えば表面積を広く形成する。
図1には示されていないが放熱用のフィン等を設ける様
にしてもよい。漏斗状のケーシング10の前面は開口部
と成され、前面の開口部に円盤状の保護ガラス7が設け
られ、この保護ガラス7の後面に円盤状の近赤外透過フ
ィルタ5が配設されている。5は700nm以上の近赤
外光のみ透過する光学特性を有する近赤外透過フィルタ
であり、保護ガラス7は勿論、近赤外光を透過させる光
学特性を有するガラスが選択される。
The casing 10 of the near-infrared lighting device 1 is made of metal in a substantially funnel shape, and has a large surface area so that heat is sufficiently radiated from the surface of the casing 10.
Although not shown in FIG. 1, fins or the like for heat dissipation may be provided. A front surface of the funnel-shaped casing 10 is formed as an opening, and a disk-shaped protective glass 7 is provided in the front opening, and a disk-shaped near-infrared transmission filter 5 is arranged on the rear surface of the protection glass 7. There is. Reference numeral 5 is a near-infrared transmission filter having an optical property of transmitting only near-infrared light of 700 nm or more. Of course, not only the protective glass 7 but also a glass having an optical property of transmitting a near-infrared light is selected.

【0014】ケーシング10の略々中間位置には光源1
1が配設される。この光源11としては高輝度型(短ア
ーク型)キセノンランプが用いられる。この短アーク型
キセノンランプはアーク長が1〜2mm程度の石英製放
電管に常温で6気圧程度のキセノンガスを封入したもの
で、平均輝度が104 〜9×104 cd/cm2 程度の
高輝度が得られる。この短アーク型キセノンランプの定
格ランプ電力は75W〜30KW程度のものまでが市販
されている。
A light source 1 is provided at a substantially intermediate position of the casing 10.
1 is provided. As the light source 11, a high brightness type (short arc type) xenon lamp is used. This short arc type xenon lamp is a quartz discharge tube having an arc length of about 1 to 2 mm, filled with xenon gas of about 6 atm at room temperature, and has an average brightness of about 10 4 to 9 × 10 4 cd / cm 2 . High brightness can be obtained. The short arc type xenon lamp having a rated lamp power of about 75 W to 30 KW is commercially available.

【0015】この様なキセノンランプの分光分布を図2
に示す。即ち、分光分布は紫外光領域から可視光領域2
0aまでの700nm以下は、自然昼光に似た連続スペ
クトルであり、700nm以上の近赤外光領域20bで
は強い線スペクトルを有している。この分光特性は入力
電圧(定格入力)を高めてもほとんど変化しないことも
知られている。
The spectral distribution of such a xenon lamp is shown in FIG.
Shown in. That is, the spectral distribution ranges from the ultraviolet light region to the visible light region 2
700 nm or less up to 0a is a continuous spectrum similar to natural daylight, and has a strong line spectrum in the near infrared light region 20b of 700 nm or more. It is also known that this spectral characteristic hardly changes even if the input voltage (rated input) is increased.

【0016】この短アーク型キセノンランプ11はケー
シング10の略々中間の中心位置で、その長手方向をケ
ーシング10の前面及び裏面方向に向けて配設され、こ
の短アーク型キセノンランプ11を覆う様に半月型の反
射鏡12を配設する様にケーシング10内に所定方法で
係止させる。半月型の反射鏡12には略々中心位置に透
孔18が穿たれ、キセノンランプ11の一端が、この透
孔18に挿通保持されている。又、このキセノンランプ
11を前後(矢印A−B方向)に移動させて、焦点深度
が調整可能な構成となされている。この調整機構は照明
装置に広く利用されているので具体的構成を省略する
が、ケーシング10の後部に突出した調整螺子15を回
動させることでキセノンランプ11をA−B方向に微調
整可能となされている。
The short arc type xenon lamp 11 is arranged at a central position substantially in the middle of the casing 10 with its longitudinal direction directed toward the front and back sides of the casing 10 so as to cover the short arc type xenon lamp 11. The half-moon type reflecting mirror 12 is locked in the casing 10 by a predetermined method so that the half-moon type reflecting mirror 12 is arranged on the casing 10. The half-moon type reflecting mirror 12 has a through hole 18 at a substantially central position, and one end of the xenon lamp 11 is inserted and held in the through hole 18. Further, the xenon lamp 11 is moved back and forth (in the direction of arrow AB) so that the depth of focus can be adjusted. Since this adjusting mechanism is widely used in lighting devices, a specific configuration thereof will be omitted, but the xenon lamp 11 can be finely adjusted in the AB direction by rotating the adjusting screw 15 protruding to the rear portion of the casing 10. Has been done.

【0017】17は外部電源との接続部、14はケーシ
ング10の略々中心位置の上側から後方に突出させた把
手であり、ケーシング10の中心位置後方の下側には後
方から前方に溝19aの形成された支持部19が形成さ
れ、ケーシング10を保持する支持台3に固定螺子16
で保持される様に成されている。
Reference numeral 17 denotes a connecting portion for connecting to an external power source, and 14 denotes a handle protruding rearward from an upper side of a substantially central position of the casing 10, and a groove 19a is provided on a lower side of the central position of the casing 10 from rearward to frontward. Is formed on the support base 3 for holding the casing 10.
It is designed to be held in.

【0018】本例の半円型の反射鏡12はその内面に図
3の光学特性曲線21に示す様に、700nm以上の近
赤外光を反射し、他の700nm以下の波長を透過させ
る光学被膜13が形成されているので短アーク型キセノ
ンランプ11から放射した700nm以上の近赤外光2
0bは半円型の反射鏡12の光学被膜13で反射され、
ケーシング前方に配された近赤外透過フィルタ5及び保
護ガラス7を透過して強いスペクトルの近赤外光のみを
放射する。
The semi-circular reflecting mirror 12 of this example is an optical device that reflects near infrared light of 700 nm or more on its inner surface and transmits other wavelengths of 700 nm or less, as shown by an optical characteristic curve 21 in FIG. Since the coating 13 is formed, near-infrared light of 700 nm or more emitted from the short arc type xenon lamp 11
0b is reflected by the optical coating 13 of the semicircular reflecting mirror 12,
Only the near-infrared light having a strong spectrum is emitted through the near-infrared transmission filter 5 and the protective glass 7 arranged in front of the casing.

【0019】更に、短アーク型キセノンランプ11から
放射された700nm以下の紫外線領域から可視光領域
までの光20aは光学被膜13及び反射鏡12を透過し
て、ケーシング10に吸収され、ケーシング10の表面
から熱は放散される。
Further, the light 20a emitted from the short arc type xenon lamp 11 from the ultraviolet region of 700 nm or less to the visible light region is transmitted through the optical coating 13 and the reflecting mirror 12, and is absorbed by the casing 10 to be absorbed by the casing 10. Heat is dissipated from the surface.

【0020】この様な本例の近赤外照明装置は防犯用の
近赤外カメラ等の照明装置に利用すると、この近赤外照
明装置から放射される近赤外光は人間の眼では認識出来
ないので近赤外カメラ位置を認知出来ない構成となすこ
とが出来る。
When such a near-infrared lighting device of this example is used for a lighting device such as a security near-infrared camera, the near-infrared light emitted from this near-infrared lighting device is recognized by the human eye. Since it is not possible, it can be configured so that the near infrared camera position cannot be recognized.

【0021】本発明の近赤外照明装置は上述の様に光源
として従来の様にハロゲンランプやナトリウムランプに
代わって高輝度型(短アーク型)キセノンランプを用い
ているので800nm乃至1000nmで強い近赤外光
を発光し、特に発光源は数ミリと点光源に近いために光
学的集光効率の極めてよいものが得られる。
Since the near-infrared lighting device of the present invention uses a high-intensity type (short arc type) xenon lamp as a light source instead of a halogen lamp or a sodium lamp as in the conventional case as described above, it is strong at 800 nm to 1000 nm. It emits near-infrared light, and since the light emitting source is a few millimeters, which is close to that of a point light source, it is possible to obtain an extremely high optical condensing efficiency.

【0022】又、従来構成では1KWのハロゲンランプ
を光源として用いた時の近赤外透過フィルタの温度は3
00℃の高温に達しているが、本発明の近赤外照明装置
では近赤外光以外の図2で示す分光特性の場合、700
nm以下の紫外光領域から可視光領域の波長の光20a
が近赤外透過フィルタ5が配設された前方に放射されな
いので、例えば、1KWの高輝度型キセノンランプを用
いた時の近赤外透過フィルタ5の温度上昇は100℃程
度に保ち得るものが得られ、近赤外透過フィルタに吸収
される熱線を少なくすることが可能となる。
Further, in the conventional structure, the temperature of the near infrared transmitting filter is 3 when a 1 kW halogen lamp is used as a light source.
Although reaching a high temperature of 00 ° C., the near-infrared lighting device of the present invention has a spectral characteristic other than near-infrared light shown in FIG.
Light 20a having a wavelength in the range from ultraviolet light to visible light below nm
Is not radiated to the front where the near-infrared transmission filter 5 is arranged, so that the temperature rise of the near-infrared transmission filter 5 when using a 1 KW high-intensity xenon lamp can be maintained at about 100 ° C. As a result, the heat rays absorbed by the near infrared transmission filter can be reduced.

【0023】更に、高輝度型キセノンランプ11として
150Wの出力のものを用いた場合の照射距離は従来の
ハロゲンランプ1KW以上のものと同等であることも確
かめ得た。
Further, it was confirmed that the irradiation distance when the high-intensity xenon lamp 11 having an output of 150 W was used was equivalent to that of the conventional halogen lamp of 1 KW or more.

【0024】[0024]

【発明の効果】本発明の近赤外照明装置によれば高出力
の高輝度型キセノンランプを用いても近赤外透過フィル
タの温度上昇を極力低く抑えられ、同一出力の従来のハ
ロゲンランプ等に比べて温度上昇を略々1/3にするこ
とが可能となり、更に小出力の高輝度型キセノンランプ
でも高出力のハロゲンランプと同等の照射距離のある近
赤外照明装置が得られるので近赤外用サーチライトとし
て利用価値の大きなものが得られる。
According to the near-infrared lighting device of the present invention, the temperature rise of the near-infrared transmission filter can be suppressed as low as possible even if a high-power high-intensity xenon lamp is used, and a conventional halogen lamp of the same output, etc. It is possible to reduce the temperature rise to about 1/3 compared to the above, and it is possible to obtain a near-infrared lighting device with a irradiation distance equivalent to that of a high-output halogen lamp even with a low-output high-luminance xenon lamp. A highly useful infrared searchlight can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の近赤外照明装置の構成図である。FIG. 1 is a configuration diagram of a near-infrared lighting device of the present invention.

【図2】本発明の近赤外照明装置に用いるキセノンラン
プの分光特性図である。
FIG. 2 is a spectral characteristic diagram of a xenon lamp used in the near-infrared lighting device of the present invention.

【図3】本発明の近赤外照明装置の反射鏡の光学特性図
である。
FIG. 3 is an optical characteristic diagram of a reflecting mirror of the near-infrared lighting device of the present invention.

【図4】従来の近赤外照明装置の側面図である。FIG. 4 is a side view of a conventional near infrared lighting device.

【符号の説明】[Explanation of symbols]

1 近赤外照明装置 3 支持台 5 近赤外透過フィルタ 10 ケーシング 11 光源(キセノンランプ) 12 反射鏡 13 光学被膜 DESCRIPTION OF SYMBOLS 1 Near-infrared lighting device 3 Support stand 5 Near-infrared transmission filter 10 Casing 11 Light source (xenon lamp) 12 Reflector 13 Optical coating

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 高輝度型キセノンランプを用いた光源
と、 上記光源の近傍に配され、該光源から放射される近赤外
光のみ反射し、他の波長を透過させる光学被膜の施され
た反射鏡と、 上記光源及び上記反射鏡からの近赤外光のみ透過させる
近赤外透過フィルタとを具備して成ることを特徴とする
近赤外照明装置。
1. A light source using a high-intensity xenon lamp, and an optical coating disposed near the light source, which reflects only near-infrared light emitted from the light source and transmits other wavelengths. A near-infrared illuminating device comprising: a reflecting mirror; and a near-infrared transmission filter that transmits only near-infrared light from the light source and the reflecting mirror.
JP9772094A 1994-05-11 1994-05-11 Near infrared lighting device Pending JPH07307108A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9772094A JPH07307108A (en) 1994-05-11 1994-05-11 Near infrared lighting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9772094A JPH07307108A (en) 1994-05-11 1994-05-11 Near infrared lighting device

Publications (1)

Publication Number Publication Date
JPH07307108A true JPH07307108A (en) 1995-11-21

Family

ID=14199735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9772094A Pending JPH07307108A (en) 1994-05-11 1994-05-11 Near infrared lighting device

Country Status (1)

Country Link
JP (1) JPH07307108A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0790590A1 (en) * 1996-02-12 1997-08-20 Siemens Nixdorf Informationssysteme AG Infrared security system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0790590A1 (en) * 1996-02-12 1997-08-20 Siemens Nixdorf Informationssysteme AG Infrared security system

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