JPH0729788A - Projection aligner - Google Patents
Projection alignerInfo
- Publication number
- JPH0729788A JPH0729788A JP5167581A JP16758193A JPH0729788A JP H0729788 A JPH0729788 A JP H0729788A JP 5167581 A JP5167581 A JP 5167581A JP 16758193 A JP16758193 A JP 16758193A JP H0729788 A JPH0729788 A JP H0729788A
- Authority
- JP
- Japan
- Prior art keywords
- illumination
- aperture
- liquid crystal
- light
- fly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/001—Axicons, waxicons, reflaxicons
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0062—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between
- G02B3/0068—Stacked lens arrays, i.e. refractive surfaces arranged in at least two planes, without structurally separate optical elements in-between arranged in a single integral body or plate, e.g. laminates or hybrid structures with other optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Optics & Photonics (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Light Sources And Details Of Projection-Printing Devices (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体基板等に露光パタ
ーンを投影する投影式露光機に関し、特に変形照明用ア
パーチャーを有する投影式露光機に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection type exposure machine for projecting an exposure pattern onto a semiconductor substrate or the like, and more particularly to a projection type exposure machine having a modified illumination aperture.
【0002】[0002]
【従来の技術】従来の投影式露光機は図7の構成図に示
すように、照明光4を出力するための紫外線発光ランプ
と、照明光4を集光するための楕円反射鏡2と、照明光
4の光路を90°曲げるための平面反射鏡3と、照明光
4をその光軸に平行にするためのインプットレンズ5
と、照明光4のコヒーレント性を減じるためのフライア
イレンズ6と、フライアイレンズ6を通過した照明光4
の光路を90°曲げるための平面反射鏡7と、照明光4
を集光するためのコンデンサーレンズ8と、露光パター
ンを規定するレチクル9と、この露光パターンを被処理
物11に投影するための投影レンズ10と、フライアイ
レンズ6の後段にこのフライアイレンズを通過した照明
光4の光束および形状を変更するための変形照明用アパ
ーチャー12とを有する。2. Description of the Related Art As shown in the configuration diagram of FIG. 7, a conventional projection type exposure apparatus includes an ultraviolet light emitting lamp for outputting illumination light 4, an elliptical reflecting mirror 2 for converging the illumination light 4, and A plane reflecting mirror 3 for bending the optical path of the illumination light 4 by 90 °, and an input lens 5 for making the illumination light 4 parallel to its optical axis.
And a fly-eye lens 6 for reducing the coherence of the illumination light 4, and the illumination light 4 that has passed through the fly-eye lens 6.
Plane reflecting mirror 7 for bending the optical path of
Condenser lens 8 for condensing light, a reticle 9 for defining an exposure pattern, a projection lens 10 for projecting this exposure pattern on an object 11 to be processed, and a fly-eye lens 6 at the rear stage. And a modified illumination aperture 12 for changing the luminous flux and the shape of the illumination light 4 that has passed through.
【0003】次にこの露光機の動作について説明する。
紫外線発光ランプ1より出力された照明光4は楕円反射
光2により集光され、平面反射鏡3により90°曲げら
れた後、インプットレンズ5にて光軸と平行になりフラ
イアイレンズ6に入る。フライアイレンズ6を通過した
照明光4は変形照明用アパーチャー12により光束の大
きさ及び形状を変更され、楕円反射鏡7にて90°曲げ
られた後、コンデンサーレンズ8にて集光され、レチク
ル9、投影レンズ10を通過し、レチクルパターンを被
処理物11へ投影していた。Next, the operation of this exposure apparatus will be described.
The illumination light 4 output from the ultraviolet light emitting lamp 1 is condensed by the elliptical reflected light 2, bent by 90 ° by the plane reflection mirror 3, becomes parallel to the optical axis by the input lens 5, and enters the fly-eye lens 6. . The illumination light 4 that has passed through the fly-eye lens 6 is changed in the size and shape of the light flux by the modified illumination aperture 12, bent by 90 ° by the elliptical reflecting mirror 7, and then condensed by the condenser lens 8, and then the reticle. 9. The reticle pattern was projected onto the object to be processed 11 after passing through the projection lens 10.
【0004】[0004]
【発明が解決しようとする課題】この従来の投影式露光
機では、変形照明用アパーチャーとして固定の専用アパ
ーチャーを用いて露光を行っているため、レチクルパタ
ーン毎の最適な変形照明用アパーチャーを選択すること
は不可能であった。また、所定形状の変形照明用アパー
チャーを複数用意しレチクルパターンに応じて自動で交
換する機能を持つ投影式露光機も存在するが、通常の量
産工場では数百種類のレチクルが存在するため、個々の
レチクルパターンに適合した変形照明用アパーチャーを
全て用意することはスペース的、コスト的に困難であ
る。よって、個々のレチクルパターンに対する最良の解
像力および焦点深度を得ることは困難であるという問題
点があった。In this conventional projection type exposure apparatus, since exposure is carried out using a fixed dedicated aperture as the modified illumination aperture, the optimum modified illumination aperture is selected for each reticle pattern. It was impossible. There is also a projection type exposure machine that has a function of automatically changing a plurality of apertures for modified illumination of a predetermined shape and automatically changing them according to the reticle pattern.However, in a normal mass production factory, there are several hundred types of reticles. It is difficult in terms of space and cost to prepare all of the modified illumination apertures that match the reticle pattern. Therefore, it is difficult to obtain the best resolution and depth of focus for each reticle pattern.
【0005】また、実開昭61−151号公報や特開平
1−183818号公報に示すように、機械的に形状を
変化させることが可能な変形照明用アパーチャーを有す
る投影式露光機も存在するが、機械的に形状を変化させ
る際に光学系内にパーティクルを発生し製品欠陥を発生
する可能性があるという問題点が問題点があった。Further, as shown in Japanese Utility Model Laid-Open No. 61-151 and Japanese Patent Laid-Open No. 183818/1989, there is also a projection type exposure machine having a modified illumination aperture capable of mechanically changing the shape. However, there is a problem in that when mechanically changing the shape, particles may be generated in the optical system to cause a product defect.
【0006】[0006]
【課題を解決するための手段】本発明の投影式露光機
は、照明光を出力するための照明光学系と、照明光のコ
ヒーレント性を減じるためのフライアイと、露光パター
ンを規定するための露光マスクと、前記露光パターンを
被処理物に投影するための投影光学系とを有する投影式
露光機において、前記フライアイの付近にこのフライア
イを通過した照明光の光束の大きさ及び形状を光学的に
制御する変形照明用アパーチャーを備えている。SUMMARY OF THE INVENTION A projection type exposure apparatus of the present invention includes an illumination optical system for outputting illumination light, a fly eye for reducing coherence of illumination light, and an exposure pattern for defining an exposure pattern. In a projection type exposure machine having an exposure mask and a projection optical system for projecting the exposure pattern onto an object to be processed, the size and shape of the luminous flux of the illumination light passing through the fly eye near the fly eye are determined. It is equipped with an optically controlled aperture for modified illumination.
【0007】[0007]
【実施例】次に本発明について図面を参照して説明す
る。図1は本発明の一実施例の投影式露光機の構成図で
ある。図1に示すように、照明光4を出力するための紫
外線発光ランプ1と、照明光4を集光するための楕円反
射鏡2と、照明光4の光路を90°曲げるための平面反
射鏡3と、照明光4をその光軸に平行にするためのイン
プットレンズ5と、照明光4のコヒーレント性を減じる
ためのフライアイレンズ6と、フライアイレンズ6を通
過した照明光4の光路を90°曲げるための平面反射鏡
7と、照明光4を集光するためのコンデンサーレンズ8
と、露光パターンを規定するレチクル9と、この露光パ
ターンを被処理物11に投影するための投影レンズ10
と、フライアイレンズ6の後段にこのフライアイレンズ
を通過した照明光4の光束の大きさ及び形状を変更する
ための変形照明用液晶アパーチャー13と、変形照明用
液晶アパーチャー13を冷却するためのチラー14と、
変形照明用液晶アパーチャー13を制御するための液晶
コントローラー15と、液晶コントローラー15を制御
するためのメインコントローラー16とを有する。The present invention will be described below with reference to the drawings. FIG. 1 is a block diagram of a projection type exposure apparatus according to an embodiment of the present invention. As shown in FIG. 1, an ultraviolet light emitting lamp 1 for outputting the illumination light 4, an elliptical reflecting mirror 2 for converging the illumination light 4, and a flat reflecting mirror for bending the optical path of the illumination light 4 by 90 °. 3, an input lens 5 for making the illumination light 4 parallel to its optical axis, a fly-eye lens 6 for reducing the coherence of the illumination light 4, and an optical path of the illumination light 4 passing through the fly-eye lens 6. A flat reflecting mirror 7 for bending 90 °, and a condenser lens 8 for collecting the illumination light 4
A reticle 9 for defining an exposure pattern, and a projection lens 10 for projecting the exposure pattern on an object 11 to be processed.
And a modified illumination liquid crystal aperture 13 for changing the size and shape of the luminous flux of the illumination light 4 that has passed through the fly's eye lens 6 and a cooling illumination liquid crystal aperture 13. Chiller 14,
A liquid crystal controller 15 for controlling the modified illumination liquid crystal aperture 13 and a main controller 16 for controlling the liquid crystal controller 15 are provided.
【0008】次に動作について説明する。図1におい
て、紫外線発光ランプ1より出力された照明光4は楕円
反射鏡2により集光され、平面反射鏡3により90°曲
げられた後、インプットレンズ5にて光軸と平行になり
フライアイレンズ6に入る。フライアイレンズ6を通過
した照明光4はレチクルパターンに最適の光束の大きさ
及び形状に変更するための変形照明用液晶アパーチャー
13を通過し、楕円反射鏡7にて90°曲げられた後、
コンデンサーレンズ8で集光され、レチクル9、投影レ
ンズ10を通過し、レチクルパターンを被処理物11へ
投影する。Next, the operation will be described. In FIG. 1, the illumination light 4 output from the ultraviolet light emitting lamp 1 is condensed by the elliptical reflecting mirror 2 and bent by 90 ° by the plane reflecting mirror 3, and then becomes parallel to the optical axis by the input lens 5 to fly eye. Enter the lens 6. The illumination light 4 that has passed through the fly-eye lens 6 passes through the modified illumination liquid crystal aperture 13 for changing the size and shape of the light flux that is optimum for the reticle pattern, and after being bent 90 ° by the elliptical reflecting mirror 7,
The light is condensed by the condenser lens 8, passes through the reticle 9 and the projection lens 10, and projects the reticle pattern onto the object 11.
【0009】図2は本実施例の要部の構成を示す図で、
同図(a)、(b)はそれぞれフライアイレンズ6と変
形照明用液晶アパーチャー13の形状図である。図3は
本実施例のフライアイレンズ6と変形照明用液晶アパー
チャー13との位置関係を示した図である。図4、図
5、図6はそれぞれ本実施例の変形照明用液晶アパーチ
ャー13の動作例を示す形状図である。FIG. 2 is a diagram showing the construction of the main part of this embodiment.
9A and 9B are shape diagrams of the fly-eye lens 6 and the modified illumination liquid crystal aperture 13, respectively. FIG. 3 is a diagram showing the positional relationship between the fly-eye lens 6 and the modified illumination liquid crystal aperture 13 of this embodiment. 4, 5 and 6 are shape diagrams showing an operation example of the modified illumination liquid crystal aperture 13 of the present embodiment.
【0010】図2(a)、(b)に示すように、変形照
明用液晶アパーチャー13は円形の液晶パネル構造をな
し、個々の液晶17はフライアイレンズ6の個々のフラ
イアイ18に対し1対1に対応した形状を持ち、5〜1
0mm角の大きさである。また、図3に示すように、イ
ンプットレンズ5によって光軸に平行な状態になった照
明光4はフライアイレンズ6により点線で示すように拡
大される。本実施例の変更照明用液晶アパーチャー13
は個々のフライアイ18から出力される照明光4を個々
に遮ることができるよう、個々のフライアイ18から出
力された照明光4が互いに交わる位置より手前のフライ
アイ18側に設置される。As shown in FIGS. 2 (a) and 2 (b), the modified illumination liquid crystal aperture 13 has a circular liquid crystal panel structure, and each liquid crystal 17 corresponds to one fly eye 18 of the fly eye lens 6. Has a shape corresponding to 1 to 5, 1
The size is 0 mm square. Further, as shown in FIG. 3, the illumination light 4 made parallel to the optical axis by the input lens 5 is expanded by the fly-eye lens 6 as shown by the dotted line. Modified Illumination Liquid Crystal Aperture 13 of this Embodiment
Is installed on the fly eye 18 side in front of the position where the illumination light 4 output from each fly eye 18 intersects with each other so that the illumination light 4 output from each fly eye 18 can be individually blocked.
【0011】また、メインコントローラー16は個々の
レチクルパターンに対して最良の解像度および焦点深度
を得ることができる変形照明用アパーチャーの形状デー
タを記憶している。メインコントローラー16にレシピ
の指定をするとメインコントローラー16は液晶コント
ローラー15に形状データを送り、液晶コントローラー
15は変形照明用液晶アパーチャー13の個々の液晶1
7を制御動作させ、照明光4の通過もしくは遮断を行
う。The main controller 16 also stores the shape data of the modified illumination aperture that can obtain the best resolution and depth of focus for each reticle pattern. When the recipe is designated to the main controller 16, the main controller 16 sends the shape data to the liquid crystal controller 15, and the liquid crystal controller 15 causes the individual liquid crystal 1 of the liquid crystal aperture 13 for the modified illumination.
7 is controlled to pass or block the illumination light 4.
【0012】以上の動作により、図4に示すような輪帯
照明アパーチャー、図5に示すような四つ穴照明アパー
チャー、その他、考えられる全てのパターンを形成する
ことができる。この際、個々の液晶17をさらに細分化
すれば輪帯部分をさらに円弧状に近づけることができ
る。上述した本実施例の液晶制御動作は液晶シャッター
の原理を用いて実施している。By the above operation, it is possible to form an annular illumination aperture as shown in FIG. 4, a four-hole illumination aperture as shown in FIG. 5, and all other conceivable patterns. At this time, if each of the liquid crystals 17 is further subdivided, the ring zone portion can be made closer to an arc shape. The liquid crystal control operation of the present embodiment described above is performed using the principle of the liquid crystal shutter.
【0013】さらに、液晶コントローラー15にて液晶
17の透過率を制御することにより、所望のニュートラ
ルデンシティフィルター(NDフィルター)を有した変
形照明用液晶アパーチャー13が実現できる。図6に示
すように、中心付近のフライアイレンズからの照明光出
力部に透過率50%のNDフィルターを設けた輪帯照明
アパーチャーも容易に可能となる。その他、考えられる
全てのパターンの変形照明用アパーチャーを形成した上
で、フライアイ18に対しそれぞれ個別に任意の透過率
を指定することが可能となる。Further, by controlling the transmittance of the liquid crystal 17 by the liquid crystal controller 15, the liquid crystal aperture 13 for modified illumination having a desired neutral density filter (ND filter) can be realized. As shown in FIG. 6, an annular illumination aperture in which an ND filter having a transmittance of 50% is provided in the illumination light output portion from the fly-eye lens near the center is also easily possible. In addition, it is possible to individually specify an arbitrary transmittance for each fly eye 18 after forming apertures for modified illumination of all possible patterns.
【0014】本実施例では、変形照明用アパーチャーと
して変形照明用液晶アパーチャー13を用いることによ
り、露光の際のレシピにて個々のレチクルパターンに対
し最も適合した変形照明用アパーチャーをメインコント
ローラー16により指定することが可能となる。その
上、機械的に変形照明用アパーチャーを交換するのでは
なく、液晶シャッターの原理を用いるため発塵は一切な
い。また、照明光4の照射による変形照明用液晶アパー
チャー13の発熱に対しては、チラー14により冷媒を
循環させ放熱を行う構造を採用している。In the present embodiment, by using the modified illumination liquid crystal aperture 13 as the modified illumination aperture, the main controller 16 designates the modified illumination aperture most suitable for each reticle pattern in the recipe at the time of exposure. It becomes possible to do. Moreover, since the deformation illumination aperture is not mechanically replaced and the principle of the liquid crystal shutter is used, no dust is generated. Further, with respect to the heat generation of the modified illumination liquid crystal aperture 13 due to the irradiation of the illumination light 4, a structure in which a coolant is circulated by a chiller 14 to radiate heat is adopted.
【0015】[0015]
【発明の効果】以上説明したように本発明は、全てのレ
チクルに対応する変形照明用アパーチャーの形状データ
をメインコントローラーに持ち、変形照明用液晶アパー
チャーの液晶をデータ通りの形状にコントロールするこ
とにより、レシピ指定のみで個々のレチクルパターンに
対し最良の解像度および焦点深度を得ることができると
いう効果がある。また、液晶シャッターの原理を用いて
変形照明用アパーチャーの形状を成形しているので、変
形照明用アパーチャーの変更に伴う発塵による製品欠陥
の可能性は皆無となるという効果がある。As described above, according to the present invention, the shape data of the modified illumination aperture corresponding to all the reticles is held in the main controller, and the liquid crystal of the modified illumination liquid crystal aperture is controlled to the shape according to the data. There is an effect that the best resolution and depth of focus can be obtained for each reticle pattern only by designating the recipe. Further, since the shape of the modified illumination aperture is formed by using the principle of the liquid crystal shutter, there is an effect that there is no possibility of a product defect due to dust generation due to the modification of the modified illumination aperture.
【図1】本発明の一実施例の投影式露光機の構成図であ
る。FIG. 1 is a configuration diagram of a projection type exposure apparatus according to an embodiment of the present invention.
【図2】本発明の一実施例における要部の構成を示す図
で、同図(a)はフライアイレンズの形状図、同図
(b)は変形照明用液晶アパーチャーの形状図である。2A and 2B are diagrams showing a configuration of a main part in one embodiment of the present invention, wherein FIG. 2A is a shape diagram of a fly-eye lens, and FIG. 2B is a shape diagram of a modified illumination liquid crystal aperture.
【図3】本発明の一実施例におけるフライアイレンズと
変形照明用液晶アパーチャーの位置関係図である。FIG. 3 is a positional relationship diagram of a fly-eye lens and a modified illumination liquid crystal aperture according to an embodiment of the present invention.
【図4】本発明の一実施例における変形照明用液晶アパ
ーチャーの動作例1の説明図である。FIG. 4 is an explanatory diagram of an operation example 1 of the liquid crystal aperture for modified illumination in the embodiment of the present invention.
【図5】本発明の一実施例における変形照明用液晶アパ
ーチャーの動作例2の説明図である。FIG. 5 is an explanatory diagram of an operation example 2 of the modified illumination liquid crystal aperture according to the embodiment of the invention.
【図6】本発明の一実施例における変形照明用液晶アパ
ーチャーの動作例3の説明図である。FIG. 6 is an explanatory diagram of an operation example 3 of the liquid crystal aperture for modified illumination in the embodiment of the present invention.
【図7】従来の投影式露光機の構成図である。FIG. 7 is a configuration diagram of a conventional projection type exposure apparatus.
1 紫外線発光ランプ 2 楕円反射鏡 3 平面反射鏡 4 照明光 5 インプットレンズ 6 フライアイレンズ 7 平面反射鏡 8 コンデンサーレンズ 9 レチクル 10 投影レンズ 11 被処理物 12 変形照明用アパーチャー 13 変形照明用液晶アパーチャー 14 チラー 15 液晶コントローラー 16 メインコントローラー 17 液晶 18 フライアイ 1 UV Light Emitting Lamp 2 Elliptical Reflector 3 Planar Reflector 4 Illumination Light 5 Input Lens 6 Fly's Eye Lens 7 Planar Reflector 8 Condenser Lens 9 Reticle 10 Projection Lens 11 Workpiece 12 Deformed Illumination Aperture 13 Deformed Illumination Aperture 14 Chiller 15 Liquid crystal controller 16 Main controller 17 Liquid crystal 18 Fly eye
Claims (3)
照明光のコヒーレント性を減じるためのフライアイと、
露光パターンを規定するための露光マスクと、前記露光
パターンを被処理物に投影するための投影光学系とを有
する投影式露光機において、前記フライアイの付近にこ
のフライアイを通過した照明光の光束の大きさ及び形状
を光学的に制御可能な変形照明用アパーチャーを備えた
ことを特徴とする投影式露光機。1. An illumination optical system for outputting illumination light,
Fly-eye to reduce the coherence of illumination light,
In a projection type exposure machine having an exposure mask for defining an exposure pattern, and a projection optical system for projecting the exposure pattern onto an object to be processed, in the vicinity of the fly eye, the illumination light passing through the fly eye A projection type exposure apparatus comprising an aperture for modified illumination capable of optically controlling the size and shape of a light beam.
ッタ機能を備えたパネル構造である請求項1記載の投影
式露光機。2. The projection type exposure apparatus according to claim 1, wherein the modified illumination aperture has a panel structure having a liquid crystal shutter function.
ーが複数の液晶の集合体である請求項2記載の投影式露
光機。3. The projection exposure apparatus according to claim 2, wherein the modified illumination aperture of the panel structure is an assembly of a plurality of liquid crystals.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5167581A JPH0729788A (en) | 1993-07-07 | 1993-07-07 | Projection aligner |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5167581A JPH0729788A (en) | 1993-07-07 | 1993-07-07 | Projection aligner |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0729788A true JPH0729788A (en) | 1995-01-31 |
Family
ID=15852410
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5167581A Pending JPH0729788A (en) | 1993-07-07 | 1993-07-07 | Projection aligner |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0729788A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6333780B1 (en) | 1999-12-27 | 2001-12-25 | Mitsubishi Denki Kabushiki Kaisha | Projection aligner |
WO2007039257A1 (en) * | 2005-10-03 | 2007-04-12 | Firma Carl Zeiss Smt Ag | Illumination system comprising an otpical filter |
JP2008172256A (en) * | 1997-03-31 | 2008-07-24 | Asml Holding Nv | Adjustable slit device and method of varying line width |
CN112306004A (en) * | 2019-07-26 | 2021-02-02 | 长鑫存储技术有限公司 | Semiconductor process recipe management method and system |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS645433B2 (en) * | 1982-03-25 | 1989-01-30 | Matsushita Electric Ind Co Ltd | |
JPH0513301A (en) * | 1991-06-28 | 1993-01-22 | Mitsubishi Electric Corp | Projection aligner |
JPH05304076A (en) * | 1992-02-26 | 1993-11-16 | Nikon Corp | Projection and light exposure device |
-
1993
- 1993-07-07 JP JP5167581A patent/JPH0729788A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS645433B2 (en) * | 1982-03-25 | 1989-01-30 | Matsushita Electric Ind Co Ltd | |
JPH0513301A (en) * | 1991-06-28 | 1993-01-22 | Mitsubishi Electric Corp | Projection aligner |
JPH05304076A (en) * | 1992-02-26 | 1993-11-16 | Nikon Corp | Projection and light exposure device |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008172256A (en) * | 1997-03-31 | 2008-07-24 | Asml Holding Nv | Adjustable slit device and method of varying line width |
US6333780B1 (en) | 1999-12-27 | 2001-12-25 | Mitsubishi Denki Kabushiki Kaisha | Projection aligner |
WO2007039257A1 (en) * | 2005-10-03 | 2007-04-12 | Firma Carl Zeiss Smt Ag | Illumination system comprising an otpical filter |
CN112306004A (en) * | 2019-07-26 | 2021-02-02 | 长鑫存储技术有限公司 | Semiconductor process recipe management method and system |
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