JPH07297094A - Electron source and electron beam drawing method and device - Google Patents

Abstract

PURPOSE:To speed up proximity effect compensation by providing a controller which can control the amount of radiation of electron for each electron source in an electron beam drawing for transferring the image of an array electron source onto a sample. CONSTITUTION:An electron beam 2 which is discharged from an array electron source 1 and has a section in the shape of an accelerated pattern to be drawn is transferred onto a sample 5 which is projected by a projection lens 4 and where a sensitized agent is applied for drawing. At this time, the position of the electron beam 2 is determined by a deflector 3. Only a region which can be drawn by the array electron source 1 from a control computer 6 is cut and is accumulated at a pattern data storage 7. Proximity effect compensation operation is performed to the pattern data based on the sensitivity of a known sensitizing agent by an operation device 8 and is returned to the pattern data storage 7 again. An array electron source controller 9 controls the array electron source 1 according to the content and radiates the electron beam 2 in a shape where the amount of application is compensated, thus speedily compensating proximity effect and achieving drawing accurately.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam drawing apparatus, a drawing method and an electron source used for manufacturing a semiconductor device or the like, and particularly to transfer and draw images of a plurality of electron sources arranged in a grid pattern on a sample. TECHNICAL FIELD The present invention relates to an electron beam drawing method and a drawing apparatus that reduce the proximity effect caused by doing so and perform drawing with high accuracy.

[0002]

2. Description of the Related Art One of the problems in electron beam writing is
There is known as the proximity effect. This is a phenomenon in which electron energy is accumulated on unnecessary portions other than the pattern to be drawn due to scattering of irradiated electrons in the photosensitive agent or reflection on the substrate, and the photosensitive agent is exposed. . The one that scatters in the photosensitizer and effectively expands the electron beam diameter is called forward scattering, and the one that reaches the substrate and reflects is called backscattering.

Of these, the range of backscattering is generally wider than the size of the processing dimension of the semiconductor element, and the result is equivalent to that of thin drawing with an electron beam that is blurred over a wide range. If this correction is not performed, energy accumulation in the photosensitizer at a portion having a high pattern density becomes excessive, and, for example, it appears as a phenomenon in which the width of the gap at a portion where a large graphic pattern approaches is narrowed.

In order to correct the proximity effect, the energy accumulation due to scattering exerted by each pattern is obtained in advance, and the irradiation amount is adjusted so that the deposited energy amount in each pattern in the photosensitizer becomes uniform after all patterns are drawn. It needs to be adjusted. In this method, it is necessary to solve a determinant having a dimension equal to the number of points to make the deposition energy uniform, and it takes a huge amount of time to calculate a fine dimension pattern or a highly integrated pattern by software. This calculation time is an obstacle to improving the throughput.

On the other hand, as a method for more easily performing correction, for example, a method called a ghost method or Japanese Patent Laid-Open No.
-212407 has been proposed. In these methods, after a normal pattern is drawn, an inversion pattern of the drawn pattern or a representative figure equivalent thereto is drawn by blurring the beam or drawing with a small irradiation amount.

In addition to this method, for example, there is a method of changing the irradiation amount of the contour portion of the pattern, changing the irradiation amount according to the width and size of the pattern, or changing the pattern dimension itself. Has been done. They are,
This is a simplified deposition energy control for the purpose of making correction hardware.

Further, in Japanese Patent Laid-Open No. 3-225816, a method has been proposed in which the electron beam is highly accelerated and the range of backscattering is widened to be regarded as uniform, and the proximity effect is approximated only by the pattern areal density. According to this method, it is possible to determine the irradiation amount correction value of each figure at the time of drawing only by performing an empty drawing once on the hardware before drawing.

As described above, in order to improve the throughput of electron beam writing, the proximity effect correction has been dealt with by simplifying the procedure required for the correction.

[0009]

While semiconductor devices are becoming finer and more highly integrated year by year, higher throughput is required for electron beam writing. As a drawing method that dramatically improves the throughput while maintaining the microfabrication characteristic of electron beam drawing, multiple electron sources are arranged in a grid to generate an electron beam of a specific shape, and the image is transferred. A drawing method has been proposed in which transfer is performed on a sample using an optical system. Also in this drawing method, the proximity effect correction is an important issue, and if the proximity effect correction requires a lot of time, the advantage of improving the throughput is lost.

An object of the present invention is, in this drawing method,
It is to correct the proximity effect at high speed and perform drawing with high accuracy.

[0011]

Pattern data to be drawn is divided into areas that can be irradiated by an array electron source at a time, and transferred to a pattern data storage device. During this transfer, or with respect to the pattern data in the pattern data storage device, a calculation is performed so that the amount of deposited energy of each portion in the photosensitive agent on the sample irradiated with the electron beam becomes uniform, Proximity effect correction calculation such as pattern inversion processing, contour extraction processing, pattern size classification processing, and exposure amount averaging processing is performed, and the calculation result is transferred to the array electron source control device. The array electron source control device controls the electron emission amount from each electron source based on the proximity effect correction calculation result, and transfers the pattern of the corrected irradiation amount to perform drawing.

[0012]

The deposition energy distribution E when an electron beam is incident on one point in the photosensitizer is called an energy deposition function, and is represented by the following equation, where r is the distance from the incident point.

[0013]

[Equation 1]

Here, βf and βb are the forward scattering coefficient and the backward scattering coefficient, η is the ratio of the forward scattering coefficient and the backward scattering coefficient, and C is the normalization constant.

First, the pattern to be drawn is divided into small regions, and the deposition energy from the surrounding pattern is obtained at each division point. Next, the irradiation dose of each pattern is calculated so that the deposition energy of the drawing pattern is uniform in the drawing area. This calculation is equivalent to creating a coefficient matrix representing the influence of the deposition energy from the surrounding pattern and solving the determinant having the number of rows and the number of columns of the number of divisions of the small area. Further, a representative point may be assumed on the edge of each figure or within the figure, and calculation may be performed so that the deposition energy at this representative point becomes uniform.

This method is usually executed by software, and if the number of divisions of the small area is large, the calculation time becomes long. However, in the drawing method of the present invention in which the number of electron sources is fixed in the arrayed electron sources, the correction calculation can be easily implemented in hardware, and the calculation time can be shortened.

Further, more simply, a method of extracting the contour portion of the pattern and changing the irradiation amount, a method of irradiating an inverted pattern or a pattern corresponding thereto by diverging the beam, a method of changing the size of the pattern itself, etc. Has been done. These methods can also be easily realized by applying image processing technology, which has made remarkable progress in recent years.

[0018]

【Example】

(Embodiment 1) FIG. 1 is a block diagram showing the configuration of the first embodiment of the present invention. An electron beam 2 emitted from the array electron source 1 and accelerated by an accelerating electrode (not shown) and having a cross section of a pattern to be drawn is projected by the projection lens 4 onto the sample 5 coated with the photosensitizer. It is transferred to and draws. At this time, the position of the electron beam 2 is determined by the deflector 3. Hereinafter, this drawing method is referred to as an array electron source transfer method.

The pattern to be drawn is cut out from the control computer 6 only in the area that can be drawn by the array electron source 1 and stored in the pattern data storage device 7. A proximity effect correction calculation is performed on the pattern data by the calculation device 8 based on the known sensitivity of the photosensitizer, and is returned to the pattern data storage device 7 again. According to this content, the array electron source control device 9 controls the array electron source 1 to emit the electron beam 2 having a dose-corrected shape.

In addition to the array electron source transfer method, the proximity effect always occurs when drawing with an electron beam. The proximity effect is caused by non-uniformity of energy deposited on the photosensitizer in the irradiation area due to changes in the size and density of the pattern to be written. In order to correct this, it is sufficient to control the irradiation amount at each position so that the deposition energy of the drawn pattern is constant.

In order to keep the deposition energy of the pattern constant, the influence of scattering from the surrounding pattern must be taken into consideration. First, the pattern to be drawn is divided into small regions, and the influence from the surrounding pattern is obtained at each division point corresponding to one electron source of the array electron source. this is,
The energy accumulation function is calculated from the presence or absence of the pattern around the dividing point of interest and the distance, and the energy accumulation function is arranged in the region to be considered to create a coefficient matrix showing the influence from the surroundings. Next, with the dose of the region to be drawn as an unknown number, an equation is set up so that the result obtained by multiplying by the coefficient matrix obtained above gives a constant dose in the pattern portion. By solving this equation, that is, by solving the determinant, the dose distribution of the region to be drawn, which was an unknown number, can be obtained.
If the emission electron intensity of each electron source of the array electron source is set by increasing or decreasing the sensitivity of the photosensitizer so as to obtain the dose distribution obtained here, the deposition energy of the pattern after drawing becomes constant. .

At this time, it is not necessary to associate the division point with one electron source of the array electron sources, and a plurality of electron sources may form one division area. Further, for example, a representative point may be assumed on the edge of each figure in the drawing pattern or on the figure, and the irradiation amount of each pattern may be calculated so that the deposition energy at this representative point becomes uniform. The size of the determinant to be calculated is small and the calculation speed is high in both the method of making one divided region with a plurality of electron sources and the method of assuming a representative point. These methods may be selected according to the required correction accuracy and correction time.

Usually, the pattern data handled by the electron beam drawing apparatus is stored as information such as position, size and repetition on the control computer, and in many cases the data is compressed to save the storage area. One of the features of the array electron source transfer method is that the pattern data to be drawn stored in the control computer is divided into areas that the array electron source can irradiate at one time.
Transfer to the pattern data storage device. The data transfer here is, for example, developing a rectangular pattern represented by a position and a size on the control computer on the coordinate grid of the array electron source. At this time, it is possible to simultaneously calculate the value of the energy deposition function and create the coefficient matrix. This process is exactly the same as the procedure of the proximity effect correction by software. Therefore, correction calculation can be performed in parallel with drawing, and highly accurate proximity effect correction can be performed without reducing throughput. Of course, the coefficient matrix may be calculated after the transfer of all data to the pattern data storage device is completed.

This method is exactly the same as the correction procedure by software, and may be performed by software.
However, the upper limit of the area that can be irradiated at one time is determined by the size of the array electron source, and the division number of the pattern data is fixed depending on the number of electron sources of the array electron source. Therefore,
The dedicated hardware of this method can be easily implemented and the calculation time can be shortened.

FIG. 2 shows an example of the correction result of the irradiation amount by this method.
Shown in. It is assumed that a photosensitive material is applied on a sample of a certain material at a certain acceleration voltage. At this time, it is assumed that the optimum irradiation amount of a pattern having a certain reference size with an average pattern density is 100. Under this condition, for example, as shown in part a of FIG. 2, the predetermined size cannot be obtained unless the irradiation amount of the isolated pattern smaller than the reference pattern is larger than the reference. Further, even with the same pattern as this, when a large pattern exists in the periphery as shown in part b of FIG. 2, the irradiation amount may be small. The irradiation amount shown in FIG. 2 indicates the calculation result of the correction amount with respect to the reference irradiation amount 100. In order to make the amount of deposition energy in the photosensitizer constant for each pattern, the radiation intensity distribution of the electron beam emitted on the array electron source may be set in this way.

(Example 2) The array electron source 1 is, for example, one that emits electrons by irradiating light from the front or back using a material that converts light into electrons, and one in which minute field emission chips are arrayed. , Those using a semiconductor PN junction, those sandwiching an insulator with a metal film, and the like. 2 of these materials
The pixels are arranged in a dimension and each is regarded as a pixel, and electron emission is controlled by an electric signal or an optical signal corresponding to the pattern.

FIG. 3 shows a method of controlling the electron emission amount of each pixel of the array electron source 1. In FIG. 3A, the voltage applied to the electron source 11 of each pixel is changed by the control signal 13 to control the emission amount of the electron beam 12. The electron source 11 of FIG.
For the electron source material, a material in which a semiconductor PN junction and an insulator are sandwiched between metal films is applied. FIG. 3B shows an electron beam 12 emitted from the photoelectron conversion element 11 a by the light 15 emitted from the light emitting element 14 controlled by the control signal 13.
Is an example of being emitted. In this case, the radiation amount of the electron beam 12 is controlled by the radiation intensity of the light emitting element 14. Figure 3
(C) is an example in which the amount of electron emission is controlled by the voltage applied to the extraction electrode 16. The electron source 11 may be an array of minute field emission chips, an array using a semiconductor PN junction, or an array sandwiching an insulator between metal films. When the voltage applied to the electron source is changed or the extraction voltage is changed, the initial velocity of the electron beam changes. However, under normal drawing conditions, these voltages are considered to be smaller and less affected than the acceleration voltage, but if the reference of the voltage applied to the electron source and the reference of the acceleration electrode 20 are the same in FIG. Can be eliminated.

(Embodiment 3) Separately from this, the electron emission amount can be relatively changed by changing the emission time for each pixel. If the irradiation time is short, the energy deposited in the photosensitizer is small, and if the irradiation time is long, the amount of deposited energy is relatively large. To control the emission time,
The time of the signal of the electron emission applied to each pixel may be controlled. In the example of (a), (b) and (c) of FIG.
Change the time to add. Further, FIG. 3D shows an example in which the emission time of the electron beam 12 is changed by opening and closing the light control device 17 controlled by the emission time control device 18 for the continuous light 15 entering the photoelectric conversion element 11a. ing. Figure 3
In the example shown in (e), the trajectory of the electron beam 12 is changed by the blanking electrode 19 as shown by the broken line, and the electron beam 12 is blocked by a diaphragm (not shown). In this case, the voltage applied to the blanking electrode 19 is controlled by the emission time controller 18.

In the method of controlling the emission time, the emission time according to the amount of emission is set in the timer and the time is counted to turn on / off the electron emission. FIG. 3 (f) shows an example of the timing of the control signal. It is assumed that the pixel 1 having the control signal 1 corresponds to the pixel 2 and the control signal 2 corresponds to the pixel 2. As a result of the dose correction calculation, it is assumed that the radiation amount of pixel 1 is 6 in arbitrary units and pixel 2 is 3. First, time T
At 0, the control signal is turned on and counting of the time signal is started. Then, at the third time T1 of the time signal, the control signal 2
Is turned off and the control signal 1 is turned off at the sixth time T2 to obtain the required radiation amount. In FIG. 3 (f), the radiation starts at the radiation start time T0 at the same time, but the timing of radiation of the pixels shorter than the longest radiation time may be arbitrary as long as it falls within the longest radiation time.

Alternatively, the electron emission itself may be pulsed to count the number of pulses. In that case,
If the time signal in (f) is replaced with the electron emission pulse and the electron emission for each pixel is controlled by the control signal 1 and the control signal 2,
The same effect as the above example can be obtained.

(Embodiment 4) One of the applications of the electron source as shown in Embodiments 2 and 3 is a display for image display (not shown). If the image signal is regarded as pattern data and the electron beam radiation amount is controlled, a thin display with high contrast and high brightness can be realized.

(Fifth Embodiment) FIG. 4 shows a simpler proximity effect correction method than that of the first embodiment. FIG. 4A shows a pattern to be drawn.

A method of generating an inverted pattern of the drawing pattern shown in FIG. 4B and performing multiple drawing with respect to the pattern to be drawn in FIG. 4A is known as so-called ghost exposure. . At the time of drawing the reverse pattern, the irradiation amount is reduced and the projection lens condition is changed to blur the electron beam for irradiation. Ghost exposure is a method of blurring the electron beam to perform drawing, but there is a correction effect without blurring. Further, as shown in FIG. 4C, a method of multiple-drawing a typical pattern having the same effect, such as a rectangular pattern having the same area and the same center of gravity as the inverted pattern, instead of the inverted pattern. But it's okay.

At this time, multiple drawing is not always necessary. As shown in FIG. 4D, the pattern drawing 4A to be originally drawn and the inverted pattern drawing 4 generated by the arithmetic unit are shown.
If (b) is added while changing the electron emission amount and a new electron emission amount is set and writing is performed at once, the writing time is reduced.
In FIG. 4D, the difference in the amount of electron emission at this time is indicated by the difference in the shaded lines.

FIG. 4E shows an example of extracting the contour of the pattern to be drawn. The effect of proximity effect correction can be obtained by increasing or decreasing the irradiation amount of the extracted contour portion with respect to the portion other than the contour portion. The irradiation amount of the contour portion is often determined by the ratio with the inside of the contour, but may be determined by the distance to the adjacent pattern. Moreover, by setting the irradiation amount of the contour portion to 0,
The effect of reducing the pattern size can be obtained. As a result, it becomes possible to deal with the dimensional fluctuation due to process conditions such as development and etching of the photosensitive agent. At this time, if the contour width can be set, many process conditions can be dealt with. For that purpose, a program in the arithmetic unit may be set so that the contour width is variable.

This contour extraction processing may be applied to the above-mentioned inversion pattern. A portion of the inversion pattern having a large area with respect to the scattering region has a small influence on the proximity effect correction except the contour portion, and the irradiation amount may be zero. Further, the proximity effect correction can be performed with higher accuracy by controlling the contour width of the reverse pattern.

Although not shown in the drawing, the irradiation amount may be changed or the size of the pattern itself may be increased or decreased depending on the absolute size of the pattern.

In order to perform such an arithmetic operation, a dedicated arithmetic device as in the present invention may be used, but a general-purpose image processing device may be substituted for the arithmetic device.

In addition to the above, there is a method called an exposure amount averaging process in which the area density of the drawing pattern is calculated, and the irradiation amount is small in a portion having a high area density and is large in a portion having a low density. is there. This method is effective when the acceleration voltage of the electron beam is high and the region affected by the proximity effect is wide. When the acceleration voltage is high, the corrected irradiation dose is
Almost the same value as the result shown in is obtained. This method
The irradiation amount can be corrected simply by calculating the area density of the pattern around the pattern to be drawn, and the information on the pattern position is unnecessary. Therefore, even in the conventional variable shaping type or collective figure irradiation type electron beam drawing apparatus, it is only necessary to perform blank drawing for processing only pattern data before drawing, and the effect of shortening the correction time is great. In the array electron source transfer method, if the area density is calculated when the pattern data to be drawn is transferred to the pattern data storage device, not only empty drawing before drawing becomes unnecessary, but also correction calculation can be performed at high speed. The effect of shortening the correction time is great.

(Embodiment 6) The arrangement electron source transfer method is shown in FIG.
As shown in, a region that can be irradiated at one time, that is, data corresponding to the size of the array electron source is cut out from all the pattern data to be drawn. At this time, if the size of the data area to be cut out and the size of the array electron source are the same, the proximity effect from the adjacent area cannot be considered.
Therefore, as shown in FIG. 5, with respect to the sizes Ex and Ey of the arrayed electron sources, the area of the pattern data storage device is enlarged by the ranges Px and Py that the proximity effect reaches so as to overlap the adjacent areas. To do. If you do this,
All proximity effects in adjacent areas can be taken into account.

The region where the proximity effect extends depends on the acceleration voltage and the materials of the sample and the photosensitizer. Usually, it is sufficient to consider about three times the backscattering coefficient βb, and for example, on a silicon substrate, the values shown in Table 1 are obtained. Table 1 on the sample
The area of the pattern data storage device may be enlarged by multiplying the magnification of the transfer optical system to determine Px and Py so that the area larger by the value can be corrected and calculated.

However, it is not necessary to take a large area of the data storage device in the case of an isolated pattern which can be regarded as having little influence even if each of the drawn patterns is farther from or closer to the values shown in Table 1. In particular,
This corresponds to the case where a pattern such as a hole pattern in the LSI layer is small and the pattern density is rough.

[0043]

[Table 1]

(Embodiment 7) FIG. 6 shows a pattern data storage device 7, a computing device 8 and an array electron source control device 9 of the present invention.
It is the figure which showed the example of the structure of.

The pattern data storage device 7 comprises a memory 24 and a restoration circuit 25. The pattern data output from the control computer 6 and having information such as position, size, and repetition is expanded by the restoration circuit 25 into pixels corresponding to the pattern image at the time of drawing and stored in the memory 24. The gradation, that is, the number of bits, of the memory unit corresponding to one pixel needs to be about 8 bits or more if the radiation amount control is performed in units of about 1%. The arithmetic unit 8 includes a CPU 21, a temporary storage data memory 23, a program storage memory 22, and the like. If a plurality of algorithms are registered in the program storage memory 22, they can be selected as needed. The result calculated by the arithmetic unit 8 is transferred to the pattern data storage unit 7 again. The array electron source control device 9 is an interface between the pattern data storage device 7 and the array electron source 1. For example, when the radiation amount control of the array electron source 1 is a voltage type, the contents of the pattern data storage device 7 are converted by the DA converter 26, and the signal is sent to the electron source through the amplifier 27. Further, when the radiation amount of the array electron source 1 is controlled by the radiation time, the array electron source control device 9a of FIG. 6 is used instead of the array electron source control device 9, and the radiation time is set by the set time counter 28. Control.

In FIG. 6, the array electron source control devices 9 and 9a and the array electron source 1 are structurally separated from each other, but they may be integrated. In addition, the pattern data storage device 7,
The array electron source 1 including the arithmetic unit 8 and the array electron source controllers 9 and 9a may be realized.

(Embodiment 8) FIG. 7 shows a control computer 6 of the present invention.
3 is a block diagram showing a configuration from to array electron source 1. FIG. FIG. 7A shows an example in which a plurality of pattern data storage devices 7 are provided, and FIG. 7B shows an example in which a plurality of pattern data storage devices 7 and calculation devices 8 are provided. In either case, when the radiation amount calculation time is longer than the actual radiation time, the purpose is to eliminate waiting time and improve throughput by parallelizing radiation and calculation.

The numbers of the pattern data storage devices 7 and the arithmetic devices 8 are determined by the relationship between the preparation time and the radiation time. The preparation time is defined as the sum of the calculation time and the data transfer time. The emission time is determined by the current density emitted from the electron source and the sensitivity of the photosensitizer. If the preparation time is equal to or shorter than the emission time, the pattern data storage device 7 and the arithmetic device 8 may be one set. However, when the preparation time is n times as long as the radiation time, if the pattern data storage device 7 and the arithmetic device 8 are provided as an integer set larger than n, the throughput does not decrease.
This flow is shown in FIG.

In all of the examples given here, the array electron source 1 is square and the area of the pattern on the array electron source is also square. However, depending on the type of pattern to be drawn,
The array electron source 1 does not have to be square in shape, and may be rectangular or the like. Further, the area of the pattern to be drawn may use only a part of the array electron source, or may use both the whole area and the partial area.

[0050]

EFFECTS OF THE INVENTION In electron beam drawing for transferring an image of an array electron source onto a sample, it is possible to perform drawing by correcting the proximity effect at high speed and with high accuracy.

[Brief description of drawings]

FIG. 1 is a block diagram showing a first embodiment of the present invention.

FIG. 2 is an explanatory diagram showing a relationship between a pattern and an electron beam irradiation amount.

FIG. 3 is an explanatory diagram showing a method of controlling the radiation amount of an array electron source.

FIG. 4 is an explanatory diagram showing another correction method.

FIG. 5 is an explanatory diagram showing a region where an array electron source can emit at one time and a proximity effect correction region.

FIG. 6 is a block diagram showing the contents of a pattern data storage device, a calculation device, and an array electron source control device.

FIG. 7 is a block diagram showing the configurations of a pattern data storage device, a calculation device, and an array electron source control device.

FIG. 8 is a flowchart showing the flow of pattern data emitted by an array electron source.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Array electron source, 2 ... Electron beam, 3 ... Deflector, 4 ... Projection lens, 5 ... Sample, 6 ... Control computer, 7 ... Pattern data storage device, 8 ... Arithmetic device, 9 ... Array electron source control device.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI Technical display location G21K 5/04 CM H01J 37/06 Z 37/305 B 9172-5E

Claims (15)

[Claims] 1. An arrayed electron source capable of emitting an electron beam having a cross section of an arbitrary shape by arranging a plurality of electron sources in a grid pattern and controlling the electron emission of each electron source. An array-shaped electron source having a control device capable of controlling the amount of electron emission for each electron source. 2. The arrayed electron source according to claim 1, wherein the electron emission amount of each electron source is controlled by changing a voltage applied to each electron source. 3. The arrayed electron source according to claim 1, wherein the electron emission amount of each electron source is controlled by the emission time of each electron source. 4. An electron source which is provided with an electron source in which a plurality of electron sources are arrayed in a lattice and a projection optical system which projects an image of the array of electron sources on a sample. An electron beam having a cross section of an arbitrary shape is projected onto a sample, and the electron emission amount of each electron source of the arrayed electron source is determined by referring to a pattern within a range that can be drawn by the arrayed electron source at one time. An electron beam drawing method characterized in that the control is performed by the following. 5. The array according to claim 4, wherein the array of electron sources is referred to by a pattern in a range in which the array of electron sources can be drawn at a time, and a pattern of a periphery of a range in which the array of electron sources can be rendered at a time. Beam drawing method for determining and controlling the amount of electron emission of each electron source of a circular electron source. 6. The electron emission amount of each electron source of the array of electron sources is determined so that the deposition energy of each figure of the drawn pattern in the photosensitizer becomes constant. Electron beam drawing method. 7. The electron of each of the arrayed electron sources according to claim 4 or 5, wherein a representative point is set on each figure of the drawn pattern and the deposition energy of the representative point in the photosensitive agent is constant. An electron beam writing method for determining the electron emission of a source. 8. The first electron source of each of the arrayed electron sources corresponding to the pattern to be drawn according to claim 4 or 5.
By the combination of the second radiation amount of each electron source of the arrayed electron sources corresponding to the first drawing and the inversion pattern of the pattern to be drawn or the pattern having the same effect as the inversion pattern An electron beam drawing method comprising a second drawing. 9. The electron emission amount of each electron source of the arrayed electron sources corresponding to a pattern to be drawn, and an inverted pattern of the pattern to be drawn, or a pattern having an effect equivalent to that of the inverted pattern. An electron beam drawing method in which the electron emission amount of each electron source of the corresponding array of electron sources is added to perform writing as a new electron emission amount at once. 10. The electron emission amount of each electron source of the arrayed electron sources according to claim 4 or 5, wherein an outline portion of each figure of a pattern to be drawn is extracted and only the outline portion is made independent from each figure. Electron beam drawing method to determine. 11. The electron beam drawing method according to claim 4, wherein the electron emission amount of each electron source of the array of electron sources is determined based on the density of the area of the pattern around the pattern to be drawn. 12. An electron beam writing apparatus for performing writing using the electron beam writing method according to claim 4 or 5, comprising: an array of electron sources; and a control computer that outputs pattern data to the array of electron sources. An electron beam drawing apparatus, characterized in that a pattern data storage device having at least a storage unit larger than the number of electron sources of the array electron source for associating each electron source of the array electron source with pattern data is provided therebetween. . 13. The electron beam drawing apparatus according to claim 12, further comprising a calculation device for calculating an electron emission amount of each electron source of the array of electron sources by referring to pattern data before drawing. 14. The array of electrons at the time of drawing according to claim 13, based on the electron emission amount of each electron source of the array of electron sources calculated by the calculation device and the sensitivity of a photosensitizer used for drawing. An electron beam drawing device that draws by controlling the electron emission amount of each electron source. 15. An electron beam drawing apparatus according to claim 14, wherein a plurality of the pattern data storage device and / or the arithmetic device are provided to perform drawing and arithmetic operation in parallel.