JPH07297092A - Charged particle beam exposure method and device - Google Patents

Abstract

PURPOSE:To improve throughput. CONSTITUTION:The electrostatic capacitance of a capacitor in an amplifier circuit for high-frequency components is adjusted so that a set time can be minimized when input changes in large steps in an amplifier circuit 32. A variable resistor 33 which can constitute a low-pass filter by a coupling circuit with a deflector 30 is connected between the output terminal of the amplifier circuit 32 and the deflector 30. When the input of the amplifier circuit 32 changes in large steps, the resistance of the variable resistor 33 is reduced to 0. On the other hand, when the input changes in small steps, the coupling circuit constitutes a low-pass filter and switches the resistance of the variable resistor 33, thus reducing the set time of a deflector drive voltage.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle beam exposure method and apparatus.

[0002]

2. Description of the Related Art With the miniaturization of semiconductor integrated circuit devices, charged particle beam exposure apparatuses have been used. Electrons are used as the charged particles. According to this device, 0.
Fine processing of 05 μm or less can be performed with alignment accuracy of 0.02 μm or less. However, since the charged particle beam is scanned and exposed on the semiconductor wafer or the mask, the exposure time becomes longer than that of the optical exposure. Therefore, it is necessary to improve the throughput of the charged particle beam exposure apparatus.

FIG. 8 shows a main structure of a conventional charged particle beam exposure apparatus. Semiconductor wafer 1 as an exposure object
0 is placed on the moving stage 11. A resist film is deposited on the semiconductor wafer 10, and exposure is performed by irradiating the resist film with an electron beam EB as a charged particle beam. The scanning of the electron beam EB on the semiconductor wafer 10 is performed by the moving stage 11 and the main deflector 20 and the sub-deflector 30 arranged above the moving stage 11. Usually, the main deflector 20 is an electromagnetic type, and the sub deflector 30 is an electrostatic type.

The movable stage 11, the main deflector 20, and the sub-deflector 30 are listed in descending order of the scannable range with the required accuracy.
However, the sub-deflector 30, the main deflector 20, and the moving stage 11 are arranged in order of increasing scanning speed. The electron beam E on the semiconductor wafer 10 is utilized by utilizing such a scanning property.
The B scan is performed, for example, as shown in FIG. That is, the electron beam EB is scanned in the direction A within the sub-field F by the sub-deflector 30 and one sub-field F is scanned.
Every time the scanning inside is completed, the main deflector 20 performs step scanning in the longitudinal direction B of the stripe ST (direction perpendicular to the direction A) by the width of the subfield F. Further, the moving stage 11 continuously scans in the direction C perpendicular to the direction B.

In FIG. 8, the main deflection data DM is D / A.
It is converted into analog by the converter 21, then amplified by the amplifier circuit 22, and supplied to the main deflector 20 as the drive current I.
Similarly, the sub-deflection data DS is analogized by the D / A converter 31, then amplified by the amplifier circuit 32, and the drive voltage V
Is supplied to the sub deflector 30. When the sub-deflector 30 scans the electron beam EB in the direction A of FIG. 9, the driving voltage V changes by a small step for each shot of the electron beam EB, and when the scanning in the direction A is swung back from the end to the start. Indicates that the drive voltage V changes in large steps corresponding to the dotted line.
FIG. 10 (A) shows the waveform of the drive voltage V in the case of a small step change, and FIG. 10 (B) shows the waveform of the drive voltage V in the case of a large step change.

[0006]

Due to the frequency characteristics of the amplifier circuit 32 and the capacity of the sub-deflector 30, the settling time of the drive voltage V cannot be set to 0 when the input of the amplifier circuit 32 changes stepwise. During this settling time, the deflection error is large, so that the exposure cannot be performed, resulting in a waiting time, which causes a decrease in the throughput of the charged particle beam exposure apparatus.

Since the number of small step changes is larger than the number of large step changes, conventionally, the characteristics of the amplifier circuit 32 are adjusted so that the settling time Δt1 for small step changes is minimized. . Therefore, for example, when the settling time Δt1 is set to 100 ns, the settling time Δt2 at a large step change becomes a relatively large value of 500 ns, which hinders the throughput improvement of the charged particle beam exposure apparatus. This adjustment is performed by changing the electrostatic capacity of the capacitor included in the amplifier circuit 32 and passing a high frequency component.

In view of such problems, an object of the present invention is to provide a charged particle beam exposure method and apparatus capable of improving throughput.

[0009]

The charged particle beam exposure method and apparatus according to the present invention will be described with reference to the reference numerals of the corresponding components in the drawings. In the first invention, for example, as shown in FIGS. 1 and 4, the input of the amplifier circuit 32 is step-changed by at least the change amount of the first value and the second value larger than the first value, and the output of the amplifier circuit 32 is changed. In the charged particle beam exposure method of deflecting the charged particle beam EB incident on the exposure object 10 by the deflector 30 coupled to the end, as the amplifier circuit 32, output when the input stepwise changes by the first value. A variable impedance unit 33 capable of forming a low-pass filter in a coupling circuit with the deflector 30 is connected between the output end of the amplifier circuit 32 and the deflector 30 by using a high-speed response that causes damping vibration. However, when the step change amount is the first value, the coupling circuit forms a low-pass filter, and when the step change amount is the first value, the high-frequency component is higher than when the step change amount is the second value. The lower As to switch the impedance value of the variable impedance device 33.

In the second invention, for example, as shown in FIG. 1, a deflector 30 for deflecting the charged particle beam EB incident on the exposure object 10 and an input having at least a first value and a value larger than the first value. An amplifier circuit 32 whose output end is coupled to the deflector 30 by being step-changed by the amount of change from the second value,
In a charged particle beam exposure apparatus having
The reference numeral 2 has a quick response such that damping oscillation occurs when the input changes stepwise by the first value, is connected between the output end of the amplifier circuit 32 and the deflector 30, and is coupled to the deflector 30. A variable impedance unit 33 that can form a low-pass filter with a circuit, and a combination circuit that forms a low-pass filter when the step change amount has the first value and the step change amount has the second value. The control circuit 3 for switching and controlling the impedance value of the variable impedance unit 33 so that the high frequency component is further reduced when the first value is obtained.
4 and.

The exposure object 10 is, for example, a semiconductor wafer or a mask. The deflector may be either an electromagnetic deflector or an electrostatic deflector. The amplifier circuit may have either a single stage or a plurality of stages, and may be a buffer circuit having an amplification factor of 1 such as a voltage follower. The variable impedance unit 33 is composed of, for example, an impedance element, which is a resistor, a capacitor, or a coil, and a switch element that switches the coupling of the impedance element. The phrase "a low pass filter can be configured" means that a low pass filter is configured depending on the impedance value of the variable impedance unit.

In the first and second aspects of the present invention, since the amplifier circuit 32 having a high responsiveness is used, when the input of the amplifier circuit 32 changes stepwise by the second value larger than the first value, for example, As shown in FIG. 4 (B), the settling time can be made shorter than in the conventional case (FIG. 10 (B)). Also,
Since the amplification circuit 32 has high responsiveness, the amplification circuit 32 is
If the variable impedance unit 33 is not used when the input is step-changed by the first value, damping vibration occurs in the output as shown by the dotted line in FIG. 4A, but the variable impedance unit 33 and the deflector are used. Since the low-pass filter is configured by the coupling circuit with 30, the settling time can be shortened as compared with the case where the variable impedance unit 33 is not used, as shown by the solid line in FIG. further,
Since the impedance value of the variable impedance unit 33 is switched with respect to the change of the input of the amplifier circuit 32 instead of the output, the impedance value switching effect is large.

Therefore, according to the first and second inventions, 1
The exposure processing time for one exposure target can be shortened as compared with the conventional case, and the throughput of the charged particle beam exposure apparatus can be improved. In the first aspect of the first invention, for example, in FIG. 1 and FIG.
The step change amount of the second input is determined by the signal value before the input to the amplifier circuit 32, either before or after the step change, and the impedance value of the variable impedance unit 33 is switched according to the signal value.

In the first aspect of the second aspect of the invention, for example, as shown in FIGS. 1 and 6, the control circuit 34B controls the amplifier circuit 32 so that the input step change amount of the amplifier circuit 32 is either before or after the step change. The impedance value of the variable impedance unit 33 is switched according to the signal value determined by the signal value before the input of. In these first modes, since the impedance value of the variable impedance unit 33 may be switched according to the signal value before the input to the amplifier circuit 32, the configuration becomes simple. Further, since the impedance value of the variable impedance unit 33 is switched according to the signal value before the input of the amplifier circuit 32, the input of the amplifier circuit 32 includes a transient waveform corresponding to the change of the input, for example, a glitch waveform. However, by setting the impedance value of the variable impedance device 33 to an appropriate value, it becomes possible to remove or reduce the transient waveform from the output of the amplifier circuit 32.

In the second aspect of the first invention, for example, in FIG. 3, each time the count value of the counter 35 changes by one in one direction, the input of the amplifier circuit 32 is step-changed by the first value, and the counter 35 is changed. When the count value returns from the maximum absolute value to the initial value, the input of the amplifier circuit 32 is step-changed by the second value, and the impedance value of the variable impedance unit 33A is switched according to the count value of the counter 35.

In the second aspect of the second invention, for example, as shown in FIG. 3, each time the count value i changes by one in one direction, the input of the amplifier circuit 32 is step-changed by the first value to change the count value i. A counter 35 that steps-changes the input of the amplifier circuit 32 by a second value when the absolute value returns from the maximum value to the initial value,
The control circuit 34A, which is coupled to the preceding stage of the amplifier circuit 32, controls the variable impedance unit 33 according to the count value of the counter 35.
Switch the impedance value of A.

In the second mode, the amplifier circuit 32 when the count value of the counter 35 returns from the maximum absolute value to the initial value.
Since the impedance value of the variable impedance unit 33 may be switched and controlled by the step change of the input of the above and the next step change, the configuration becomes simple. In the third aspect of the first invention, for example, in FIG. 7 and FIG. 1, the signal value before the input of the amplifier circuit 32 is temporarily stored in the storage means 345,
The variable impedance unit 33 is based on the current value DS of the signal value and the previous value DSB stored in the storage means 345.
Switch the impedance value of.

In the third aspect of the second aspect of the invention, as shown in FIGS. 7 and 1, for example, the control circuit 34C includes a storage means 345 for temporarily storing the signal value before the input corresponding to the input of the amplifier circuit 32, The variable impedance unit 3 is based on the current value of the signal value and the previous value stored in the storage means 345.
Circuits 346 and 343 for switching the impedance value of 3
A and 344.

In the third aspect, the settling time of the output of the amplifier circuit 32 can be shortened with respect to an arbitrary step change such as vector scanning to improve the throughput of the charged particle beam exposure apparatus. In the fourth aspect of the first invention, the variable impedance unit 33 is a variable resistor as shown in FIG. 1, for example.

In the fourth aspect of the second invention, the variable impedance unit 33 is a variable resistor as shown in FIG. 1, for example. In the fourth aspect, since the variable parameter of the variable impedance unit 33 is only the resistance value, it becomes easy to find the optimum resistance value.

[0021]

Embodiments of the present invention will be described below with reference to the drawings. In different drawings, the same or similar components corresponding to each other are denoted by the same or similar reference numerals. FIG. 1 shows a main configuration of a charged particle beam exposure apparatus common to the following first to third embodiments.

In this device, a variable resistor 23 is connected between the output end of the amplifier circuit 22 and the drive signal input end of the main deflector 20, and the resistance value of the variable resistor 23 is controlled by a control circuit 24. There is. Similarly, the output end of the amplifier circuit 32 and the sub-deflector 3
The variable resistor 33 is connected between the drive signal input terminal of 0 and the resistance value of the variable resistor 33 is controlled by the control circuit 34. The configurations of the variable resistor 23 and the control circuit 24 can be the same as those of the variable resistor 33 and the control circuit 34 except for the characteristic values of the elements, and therefore, in the following, the variable resistor 33 and the control circuit 34 will be described. Only specific examples are shown.

2A to 2D show configuration examples 33A to 33D of the variable resistor 33. Variable resistors 33A to 33
Each D has a configuration in which a resistor and a switch element, for example, an analog switch are combined, and the resistance value is switched and controlled by turning on / off the switch element. In the variable resistor 33A, the resistor R1 and the switch element SW0 are connected in parallel, and the switch element SW0 is turned on or off by the control signal C0 supplied to the control input terminal of the switch element SW0. The resistance value is switched to 0 or R1.

The variable resistor 33B includes wiring and resistors R1 to R1.
One end of R3 is commonly connected, and the other ends thereof are commonly connected via switch elements SW0 to SW3. The resistance value of the variable resistor 33B is the switching element S
Control signals C0 to C supplied to control input terminals of W0 to SW3
It is possible to switch to a maximum of 14 steps according to the data of 3. The variable resistor 33C is different from the variable resistor 33B in that
A switching element S is also provided on one end side of each of the resistors R1 to R3.
W4 to SW6 are connected, and a switch element SW
4 to SW6 are turned on / off in conjunction with the switch elements SW1 to SW3, respectively.

The variable resistor 33D has a resistor R1, a resistor R2, and a resistor R3 connected in series, and has a switch element SW.
One ends of 0 to SW2 are both connected to one end of the resistor R1,
The other ends of the switch elements SW2, SW1 and SW0 are connected between the resistors R1 and R2, between the resistors R2 and R3, and to the other end of the resistor R3, respectively. The resistance value of the variable resistor 33D is the switch elements SW0 to SW.
It is possible to switch to a maximum of 7 steps according to the data of the control signals C0 to C2 supplied to the 2 control input terminals.

Various other types of variable resistors 33 are conceivable. For example, a configuration in which a series connection and a parallel connection of resistors are combined and a switch element is incorporated therein may be used. [First Embodiment] FIG. 3 shows a sub-deflector driving circuit of the first embodiment.

In this circuit, the variable resistor 33 is shown in FIG.
The variable resistor 33A shown in (A) is used. The sub-deflector scanning memory 36 is addressed by the count value i of the counter 35, and the sub-deflection data DS = f (i) read from the sub-deflector scanning memory 36 is supplied to the D / A converter 31 and digitally supplied. Be converted. The control circuit 34A includes a counter 35
Only when the count value i of 0 is 0, the zero detection signal D is set to the logical value "1".
And a delay circuit 342 which supplies a control signal C0 obtained by delaying the zero detection signal D to the control input terminal of the switch element SW0. Switch element SW
0 turns on only when the control signal C0 is "1".

As for the delay time of the delay circuit 342, when the count value i changes from n to 0, the difference between the time when the switch element SW0 turns on and the time when the output of the amplifier circuit 32 starts changing is 0 or more. And the settling time t4 of the output of the amplifier circuit 32
(Fig. 4) smaller value, preferably 50 for settling time t4
% Or less, for example, 10 ns when Δt4 = 200 ns. This point is the same in the other embodiments described below.

With the switch element SW0 turned on, D
Amplifying circuit 3 by changing the input value of A / A converter 31 by 1
A capacitor, which is included in the amplifier circuit 32 and passes a high frequency component, to the extent that an attenuation waveform is generated in the output of the amplifier circuit 32 as shown by the dotted line in FIG. 4A when the input of 2 is changed in small steps. The capacitance of the amplifier circuit 3
Increase the responsiveness of 2. Preferably, the switch element SW
When the count value i changes from n to 0 and the input of the amplifier circuit 32 changes in a large step with 0 turned on, the settling time Δt4 is minimized as shown in FIG. 4B, for example. First, the characteristics of the amplifier circuit 32 are adjusted.

Next, the operation of the first embodiment constructed as described above will be explained. The initial value of the count value i of the counter 35 is 1
The count value i changes from 1 to n by the clock CLK, the output of the amplifier circuit 32 increases stepwise in small steps, and the electron beam EB is scanned in the direction A shown in FIG. 9, for example. While the count value i is from 1 to n, the control signal C0 has the logical value "0", the switch element SW0 is turned off, and the resistance value of the variable resistor 33A becomes R1.

The resistor R1 and the electrostatic capacitance of the sub-deflector 30 form a CR integrator circuit, that is, a low-pass filter, and a high-frequency vibration component contained in the drive voltage V is removed. As shown by the solid line in (A), the drive voltage V changes, and the settling time Δt5 becomes shorter than the settling time Δt3 when the switch element SW0 is turned on. Since a low-pass filter is formed even if a resistor is connected in series to the electromagnetic deflector, the main deflector 2 in FIG.
The same result can be obtained when the variable resistor 23 is connected to 0.

When the count value i changes from n to 0, the output of the amplifier circuit 32 decreases in large steps, and the direction A shown in FIG.
It is swung back from the end of the scan to the beginning. At the time of this large step change, the switch element SW0 is turned on, and the output of the amplifier circuit 32 is directly supplied to the sub deflector 30.
As a result, the settling time Δt4 in the large step change becomes shorter than in the conventional case.

The characteristic of the amplifier circuit 32 is adjusted so that the settling time Δt4 becomes a minimum value of 200 ns, the resistor R1 is constituted by a continuous variable resistor, and the settling time Δ is set by a small step change.
When the resistance value of the resistor R1 was adjusted to minimize t5, the settling time Δt5 could be set to 100 ns. 5A shows the relationship between the step change amount of the deflector drive voltage V and the resistance value R of the variable resistor 33 in FIG. 1, and FIG. 5B shows the settling time for the step change amount at this time. Show. FIG. 5C shows the settling time of the drive voltage V with respect to the step change amount of the drive voltage V in the case of the conventional configuration shown in FIG.

As is apparent from FIG. 5, according to the first embodiment, the settling time when the driving voltage V changes stepwise is shortened, and the throughput of the charged particle beam exposure apparatus is improved. [Second Embodiment] FIG. 6 shows a settling time adjusting circuit according to the second embodiment.

This circuit comprises a variable resistor 33C shown in FIG. 2C and a control circuit 34B. Control circuit 34B
Is connected to the data input end of the register 344 and the control input ends of the switch elements SW0 to SW3 to the data output end of the register 344, which is connected to the data output end of the data conversion circuit 343 configured by a ROM, for example. . The sub-deflection data DS is supplied to the input end of the data conversion circuit 343. The sub-deflection data DS is also input data of the D / A converter 31 shown in FIG.

For example, in the case of raster scanning as shown in FIG. 9, the value of the next sub deflection data DS is uniquely determined by the current value of the sub deflection data DS. That is, the sub-deflection data D
The step change amount is determined by S. Therefore, as a result, in order to make the step change amount correspond to an appropriate resistance value of the variable resistor 33C, the sub deflection data DS is data-converted by the data conversion circuit 343 and supplied to the register 344, which is supplied to the drive voltage V At the timing of step change, the strobe signal SP1 supplied to the clock input terminal of the register 344 is raised and held in the register 344, and the switch elements SW0 to SW3 are set so as to minimize the settling time with respect to this step change amount. Is controlled to switch the resistance value of the variable resistor 33C.

The second embodiment is effective when the step change amount is 3 or more. Further, even if the amount of step change is only large and small, it is possible to remove or reduce the glitch waveform from the output of the amplifier circuit 32, which is effective. That is, since a transient glitch waveform is included in the output of the D / A converter 21 according to the change of the sub-deflection data DS, this glitch waveform or this glitch waveform could not be removed completely by a configuration not shown. By changing the resistance value of the variable resistor 33C to an appropriate value, it is possible to remove or reduce the thing from the output of the amplifier circuit 32.

[Third Embodiment] FIG. 7 shows a settling time adjusting circuit according to a third embodiment. In this circuit, the control circuit 3 of FIG.
A control circuit 34C is used instead of 4B. The control circuit 34C supplies the sub deflection data DS to one input end of the subtraction circuit 346 via the register 345, and the subtraction circuit 3
The sub-deflection data DS is directly supplied to the other input terminal of 46, and the output of the subtraction circuit 346 is supplied to the input terminal of the data conversion circuit 343A.

The sub deflection data DS is the strobe signal SP2.
After the sub-deflection data DS changes at the timing of, the difference between the current position of the sub-deflection data DS and its previous value DSB, that is, the value corresponding to the step change amount of the drive voltage V is converted into data. It is supplied to the circuit 343A. When the drive voltage V changes stepwise, the output of the data conversion circuit 343A is held in the register 344 at the timing of the strobe signal SP1, and the resistance value of the variable resistor 33C is switched to an appropriate value.

If the delay time from the input end to the output end of the control circuit 34C is too long, for example, by connecting a buffer register in the preceding stage of the D / A converter 31 of FIG. The switching timing of can be set to an appropriate time. According to the third embodiment, the settling time of the drive voltage V can be shortened with respect to arbitrary step changes such as vector scanning, and the throughput of the charged particle beam exposure apparatus can be improved.

The present invention includes various modifications other than the above. For example, if the variable resistor is combined with the deflector to form a low-pass filter, the effect of the present invention can be obtained. Therefore, the variable resistor is not limited to the variable resistor, and the variable resistor is combined with the electrostatic or electromagnetic deflector. Any impedance device that constitutes a low-pass filter may be used.

[0042]

As described above, in the charged particle beam exposure method according to the first aspect of the invention and the charged particle beam exposure apparatus according to the second aspect of the invention, an amplifier circuit having high responsiveness is used. When the input changes stepwise by a second value that is larger than the first value, the settling time can be made shorter than before. In addition, because of the high responsiveness, the amplifier circuit, when the input step changes by the first value,
If the variable impedance unit is not used, damping oscillation will occur in the output, but the settling time should be shorter than that without the variable impedance unit because the low-pass filter is composed of the coupling circuit of the variable impedance unit and the deflector. You can Furthermore, since the impedance value of the variable impedance unit is switched with respect to the change of the input, not the output of the amplifier circuit, that is, the change of the output of the amplifier circuit is predicted and the impedance value is switched, the switching effect is large. Therefore, it is possible to shorten the exposure processing time for one exposure target as compared with the conventional case, and it is possible to improve the throughput of the charged particle beam exposure.

In the first aspect of the first invention and the second aspect of the invention, the impedance value of the variable impedance unit may be switched according to the signal value before the input to the amplifier circuit, so that the structure is simplified. Further, since the impedance value of the variable impedance unit 33 is switched according to the signal value before the input of the amplifier circuit, even if the input of the amplifier circuit includes a transient waveform corresponding to the change of the input, for example, a glitch waveform. By setting the impedance value of the variable impedance device to an appropriate value, it is possible to remove or reduce the transient waveform from the output of the amplifier circuit.

In the second aspect of the first invention and the second invention, the step change of the input of the amplifier circuit when the count value of the counter returns from the maximum absolute value to the initial value and the next step change are variable. Since the impedance value of the impedance unit may be controlled to be switched, the structure is simplified. In the third aspect of the first invention and the second invention, the signal value before the input of the amplifier circuit is temporarily stored in the storage means, and based on the current value of the signal value and the previous value stored in the storage means. Since the impedance value of the variable impedance device is switched, there is an effect that the settling time of the output of the amplifier circuit can be shortened and the throughput of the charged particle beam exposure apparatus can be improved for arbitrary step changes such as vector scanning.

In the fourth aspect of the first aspect of the invention, the variable parameter of the variable impedance device is only the resistance value, so that it is easy to find the optimum resistance value.

[Brief description of drawings]

FIG. 1 is a main part configuration diagram of a charged particle beam exposure apparatus common to each embodiment of the present invention.

FIG. 2 is a circuit diagram showing a configuration example of the variable resistor of FIG.

FIG. 3 is a sub-deflector driving circuit diagram of the first embodiment of the present invention.

FIG. 4 is a waveform diagram showing a step change in deflector drive voltage.

FIG. 5 is a diagram showing a relationship between a deflector drive voltage change amount, a variable resistance value, and a settling time.

FIG. 6 is a settling time adjustment circuit diagram of a second embodiment of the present invention.

FIG. 7 is a settling time adjustment circuit diagram of a third embodiment of the present invention.

FIG. 8 is a configuration diagram of a main part of a conventional charged particle beam exposure apparatus.

FIG. 9 is an explanatory diagram of an electron beam scanning direction.

FIG. 10 is a waveform diagram showing a step change in deflector drive voltage.

[Explanation of symbols]

 10 semiconductor wafer 11 moving stage 20 main deflector 21, 31 D / A converter 22, 32 amplification circuit 23, 33, 33A to 33D variable resistor 24, 34, 34A to 34C control circuit 30 sub deflector 35 counter 36 sub Deflector scanning memory 341 Zero detection circuit 342 Delay circuit 343, 343A Data conversion circuit 344, 345 register 346 Subtraction circuit EB Electron beam

Claims (10)

[Claims] 1. A deflector connected to an output terminal of the amplifier circuit by stepwise changing an input of the amplifier circuit (32) by at least a change amount between a first value and a second value larger than the first value. 30) In the charged particle beam exposure method of deflecting the charged particle beam (EB) incident on the exposure object (10) in 30), the amplifier circuit attenuates to an output when the input stepwise changes by the first value. A variable impedance unit (33) capable of forming a low-pass filter by a coupling circuit with the deflector is connected between the output end of the amplifier circuit and the deflector by using a device having high responsiveness to the extent that vibration occurs. However, when the step change amount is the first value, the coupling circuit forms a low-pass filter, and when the step change amount is the first value, the high frequency component is higher than that when the step change amount is the first value. The variable so that A charged particle beam exposure method characterized by switching the impedance value of an impedance unit. 2. The step change amount of the input of the amplifier circuit (32) is determined by the signal value before the input to the amplifier circuit, which is either before or after the step change, and the variable according to the signal value. Impedance meter (33C)
2. The charged particle beam exposure method according to claim 1, wherein the impedance value of is switched. 3. The count value of the counter (35) is 1 in one direction.
The input of the amplifier circuit (32) is changed to the first
When the count value of the counter changes from the maximum absolute value to the initial value, the input of the amplifier circuit is step changed by the second value, and the variable impedance is changed according to the count value of the counter. The charged particle beam exposure method according to claim 2, wherein the impedance value of the container (33A) is switched. 4. A signal value before input to the amplifier circuit (32) is temporarily stored in a storage means (345), and based on a current value of the signal value and a previous value stored in the storage means. 2. The impedance value of the variable impedance unit (33C) is switched by means of a switch.
The charged particle beam exposure method described. 5. The variable impedance unit (33) comprises:
5. The charged particle beam exposure method according to claim 1, wherein the charged particle beam exposure method is a variable resistor. 6. A deflector (30) for deflecting a charged particle beam (EB) incident on an exposure object (10).
And the input is at least a first value and a second value greater than the first value.
In a charged particle beam exposure apparatus having an amplifier circuit (32) whose output end is coupled to the deflector and which is step-varied by a change amount with respect to the value, the amplifier circuit has an input step-varied by the first value. A variable impedance unit which has a quick response to such a degree that damping vibration occurs when it is connected, is connected between the output end of the amplifier circuit and the deflector, and is capable of forming a low-pass filter by a coupling circuit with the deflector ( 33), when the step change amount is the first value, the coupling circuit constitutes a low-pass filter, and when the step change amount is the second value, A charged particle beam exposure apparatus comprising: a control circuit (34) for switching and controlling an impedance value of the variable impedance unit so as to further reduce a high frequency component. 7. The signal value of the control circuit (34B), wherein the step change amount of the input of the amplifier circuit (32) is determined by the signal value before the input of the amplifier circuit, either before or after the step change. According to the variable impedance unit (33
7. The charged particle beam exposure apparatus according to claim 6, wherein the impedance value of C) is switched. 8. When the absolute value of the count value returns from the maximum value to the initial value by stepwise changing the input of the amplifier circuit (32) by the first value every time the count value changes by one in one direction. A counter (35) for stepwise changing the input of the amplifier circuit by the second value is coupled to the preceding stage of the amplifier circuit, and the control circuit (34A) controls the variable impedance unit according to the count value of the counter. 8. The charged particle beam exposure apparatus according to claim 7, wherein the impedance value of (33A) is switched. 9. The control circuit (34C) includes storage means (345) for temporarily storing a signal value before the input corresponding to the input of the amplifier circuit (32), a current value of the signal value and the storage. Circuits (346, 343A, 3) for switching the impedance value of the variable impedance unit (33) based on the previous value stored in the means.
44) and a charged particle beam exposure apparatus according to claim 6. 10. The variable impedance device (33)
Is a variable resistor.
The charged particle beam exposure apparatus according to any one of 1.