JPH0727787A - Semiconductor-type acceleration sensor - Google Patents

Semiconductor-type acceleration sensor

Info

Publication number
JPH0727787A
JPH0727787A JP17448293A JP17448293A JPH0727787A JP H0727787 A JPH0727787 A JP H0727787A JP 17448293 A JP17448293 A JP 17448293A JP 17448293 A JP17448293 A JP 17448293A JP H0727787 A JPH0727787 A JP H0727787A
Authority
JP
Japan
Prior art keywords
sensor
substrate
semiconductor
type acceleration
acceleration sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17448293A
Other languages
Japanese (ja)
Inventor
Masaru Goto
優 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Marelli Corp
Original Assignee
Kansei Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kansei Corp filed Critical Kansei Corp
Priority to JP17448293A priority Critical patent/JPH0727787A/en
Publication of JPH0727787A publication Critical patent/JPH0727787A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent the operating defect of a cantilever due to dust particles or the like and to enhance the production yield and the quality of an accelaration sensor by a method wherein a semiconductor-type sensor element is covered with a sensor cover. CONSTITUTION:A plate spring part 7 and a mass part 8 are installed on a beam part 5, and the semiconductor-type acceleration sensor element is formed. The sensor element and a peripheral circuit 9 are mounted on a substrate 4, and the substrate 4 is attached to a base 1. A metal shell 13 which covers the whole of the substrate 4 is welded to the base 1 at its peripheral edge part. Then, a sensor cover 20 is formed to be a box shape, its lower-side face is opened, and the whole of the sensor element is covered from the upper part. In addition, the sensor cover 20 is bonded to the substrate 4, and a plurality of gas ventilation holes 21 are made on the upper-side face of the sensor cover 20 so as to provide a function by which an inert gas, for oxidation prevention, which is sealed in the metal shell 13, flows into the sensor cover 20.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、半導体式加速度セン
サに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor type acceleration sensor.

【0002】[0002]

【従来の技術】従来の半導体式加速度センサの構造を図
3に基づいて説明する。同図において、1は平板状の金
属性ステム(ベース)で、その周辺部には外部との電気
接続をするための貫通孔が穿設され、その貫通孔には硬
質ガラス2を溶着することによりリード端子3が固定さ
れている。リード端子3とステム1とは硬質ガラス2に
よって電気的に絶縁されており、また硬質ガラス2は気
密性よく介在されている。また、このステム1上にはセ
ラミック基板4が搭載され、かつそのセラミック基板4
上にはカンチレバー(梁部)5及び台座6により成る半
導体式加速度センサエレメントが搭載されている。
2. Description of the Related Art The structure of a conventional semiconductor type acceleration sensor will be described with reference to FIG. In the figure, reference numeral 1 is a flat metal stem (base), and a through hole for electrical connection with the outside is formed in the peripheral portion thereof, and the hard glass 2 is welded to the through hole. The lead terminal 3 is fixed by. The lead terminal 3 and the stem 1 are electrically insulated by a hard glass 2, and the hard glass 2 is interposed with good airtightness. A ceramic substrate 4 is mounted on the stem 1, and the ceramic substrate 4
A semiconductor type acceleration sensor element including a cantilever (beam portion) 5 and a pedestal 6 is mounted on the top.

【0003】またカンチレバー5は、半導体板をエッチ
ングすることにより基部に薄肉状の板バネ部7が形成さ
れ、その一端が台座6に固定されている。またそのカン
チレバー5の先端部に形成された厚肉状の部分は、その
一部(質量)を被測定加速度に応じて変位できるように
した自由端8となるように形成されている。また板バネ
部7には歪ゲージが形成され、ワイヤボンデングにより
セラミック基板4上に形成された回路9に電気接続さ
れ、さらにその回路9からリード端子3にワイヤ線11
をワイヤボンデイングにより電気接続されている。12
はストッパーであり、その形状は逆L字状にされて立設
され、カンチレバー5の上方への最大変位量を規制して
いる。
The cantilever 5 has a thin plate spring portion 7 formed at the base by etching a semiconductor plate, and one end thereof is fixed to the pedestal 6. Further, the thick-walled portion formed at the tip portion of the cantilever 5 is formed so as to have a free end 8 capable of displacing a part (mass) thereof according to the acceleration to be measured. Further, a strain gauge is formed in the leaf spring portion 7 and is electrically connected to a circuit 9 formed on the ceramic substrate 4 by wire bonding, and the wire 9 is connected from the circuit 9 to the lead terminal 3.
Are electrically connected by wire bonding. 12
Is a stopper, the shape of which is an inverted L-shape and is erected so as to regulate the maximum amount of upward displacement of the cantilever 5.

【0004】13は周縁部に鍔部14が形成された金属
性シェルで、プレス加工により凹部が形成され、箱型と
なり、不活性ガス中でその周縁部がステム1の周縁部に
溶着されて気密封止されている。なお、この気密封止は
ステム1の周縁部が金属性シェル13の鍔部14に一致
するように上方から金属性シェル13をステム1にかぶ
せ、接触させた後に、プレスにより圧力を加えながら金
属性シェル13とステム1との間に通電することにより
両者を溶接するものである。
Reference numeral 13 designates a metallic shell having a flange 14 formed on the peripheral edge thereof, which has a recess formed by press working to form a box shape, and the peripheral edge is welded to the peripheral edge of the stem 1 in an inert gas. It is hermetically sealed. The hermetic sealing is performed by covering the stem 1 with the metallic shell 13 from above so that the peripheral edge of the stem 1 is aligned with the flange portion 14 of the metallic shell 13 and bringing them into contact with each other, while applying pressure by a press. The electric shell 13 and the stem 1 are energized to weld them together.

【0005】このように構成された、半導体式加速度セ
ンサに加速度が上下方向に外部から加えられた場合に
は、カンチレバー5の自由端8が上下方向に振動し、そ
の結果板バネ部7に歪を生じる。その歪の大きさに応じ
て半導体式歪ゲージの抵抗値が変化し、電気信号として
加速度が検出される。
When acceleration is applied to the semiconductor type acceleration sensor in the vertical direction from the outside, the free end 8 of the cantilever 5 vibrates in the vertical direction, and as a result, the leaf spring portion 7 is distorted. Cause The resistance value of the semiconductor strain gauge changes according to the magnitude of the strain, and the acceleration is detected as an electric signal.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、上記の
如き平板状ステム1と金属性シェル13との溶接にあっ
ては、図4に示すように、それらの周縁部を上下A方向
からプレス機械によって押さえながら通電して溶接する
ために高熱を発生し、微小な溶融金属の飛沫粉が金属シ
ェル13内部に向かってスプラッシュとして微細粒子1
5が飛び散り、カンチレバー5と、例えば台座6との間
の微小な隙間に入り込み、カンチレバー5の上下方向へ
の振動障害をもたらし作動不良をもたらす恐れを発生し
ていた。
However, in the welding of the plate-like stem 1 and the metallic shell 13 as described above, as shown in FIG. High heat is generated due to welding while energizing while pressing, and fine molten metal splash powder is sprayed toward the inside of the metal shell 13 as fine particles 1
5 scatters, enters a minute gap between the cantilever 5 and, for example, the pedestal 6, and causes a vertical vibrational disturbance of the cantilever 5, resulting in a malfunction.

【0007】また、本件半導体式加速度センサを作成す
る周囲環境の中を漂う塵やほこりが前記と同様にカンチ
レバー5と、例えば台座6との間の微小な隙間に入り込
む恐れがあった。この発明は、ゴミ、ほこり等によるカ
ンチレバー5の作動不良を未然に防止して半導体式加速
度センサの生産の歩止り、品質等を向上させることを目
的とする。
In addition, there is a possibility that dust and dust floating in the surrounding environment for producing the semiconductor type acceleration sensor of the present invention may enter into a minute gap between the cantilever 5 and the pedestal 6 as described above. It is an object of the present invention to prevent malfunction of the cantilever 5 due to dust, dust, etc., and improve the production yield and quality of the semiconductor acceleration sensor.

【0008】[0008]

【課題を解決するための手段】この発明に係る半導体式
加速度センサは、梁部が形成され、該梁部に質量が設け
られてなる半導体式加速度センサエレメントと、該半導
体式加速度エレメント及びその周辺回路が搭載されて、
ベースに取付られる基板と、該基板の上方から基板全体
を覆って周縁部が基板に溶着されてなる金属性シェルと
を備えてなる半導体式加速度センサにおいて、前記半導
体式加速度センサエレメントはセンサカバーによって覆
われてなる。
SUMMARY OF THE INVENTION A semiconductor type acceleration sensor according to the present invention includes a semiconductor type acceleration sensor element having a beam portion and a mass provided on the beam portion, the semiconductor type acceleration element and its periphery. Circuit is installed,
In a semiconductor type acceleration sensor comprising a substrate mounted on a base and a metallic shell covering the entire substrate from above the substrate and having a peripheral edge welded to the substrate, the semiconductor type acceleration sensor element is provided by a sensor cover. Be covered.

【0009】[0009]

【作用】上記構成によれば、半導体式加速度センサエレ
メントをセンサカバーで覆うことによって製造途中に
塵、ほこりが入らないようにしてカンチレバーの作動不
良を防止する。
According to the above structure, the semiconductor type acceleration sensor element is covered with the sensor cover to prevent dust and dirt from entering during the manufacturing process and prevent malfunction of the cantilever.

【0010】[0010]

【実施例】この発明による実施例を図1及び図2に基づ
いて詳細に説明する。図1及び図2において、図3にお
いて説明した構成のものと同一のもの、または均等なも
のには同一符号を付してその詳細説明を省略する。図1
及び図2において、20はセンサカバーで、箱状に形成
され、かつその下側面が開口して形成されており、半導
体式センサエレメント全体を上方から覆つている。また
センサカバー20は、セラミック基板4に接着されると
共に、センサカバー20の上側面には複数の気体流通孔
21が穿設され、金属性シェル13に封入された酸化防
止用不活性ガスがセンサカバー20内に流入される機能
が備えられている。
Embodiments of the present invention will be described in detail with reference to FIGS. 1 and 2. 1 and 2, the same or equivalent components as those described with reference to FIG. 3 are designated by the same reference numerals, and detailed description thereof will be omitted. Figure 1
In addition, in FIG. 2, reference numeral 20 denotes a sensor cover, which is formed in a box shape and has a lower side surface opened so as to cover the entire semiconductor type sensor element from above. Further, the sensor cover 20 is adhered to the ceramic substrate 4, and a plurality of gas flow holes 21 are formed on the upper side surface of the sensor cover 20 so that the inert gas for oxidation sealed in the metallic shell 13 is used as the sensor. It has a function of flowing into the cover 20.

【0011】[0011]

【発明の効果】以上説明したように、この発明によれば
カンチレバーの作動不良を防止できるので、センサの品
質を向上でき、生産性を向上できる等の効果が発揮され
る。
As described above, according to the present invention, the malfunction of the cantilever can be prevented, so that the quality of the sensor can be improved and the productivity can be improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による実施例を説明するための斜視図で
ある。
FIG. 1 is a perspective view for explaining an embodiment according to the present invention.

【図2】図1の断面説明図である。FIG. 2 is a cross-sectional explanatory diagram of FIG.

【図3】従来例の断面説明図である。FIG. 3 is a cross-sectional explanatory view of a conventional example.

【図4】従来例不具合の説明図である。FIG. 4 is an explanatory diagram of a defect of a conventional example.

【符号の説明】[Explanation of symbols]

20 センサカバー 21 気体流通孔 20 sensor cover 21 gas flow hole

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 梁部(5)が形成され、該梁部に板バネ
部(7)及び質量部(8)が設けられてなる半導体式加
速度センサエレメントと、該半導体式加速度エレメント
及びその周辺回路(9)が搭載されて、ベース(1)に
取付られる基板(4)と、上方から前記基板(4)全体
を覆って周縁部がベース(1)に溶着されてなる金属性
シェル(13)とを備えてなる半導体式加速度センサに
おいて、前記半導体式加速度センサエレメントはセンサ
カバー(20)によって覆われてなることを特徴とする
半導体式加速度センサ。
1. A semiconductor type acceleration sensor element having a beam portion (5), and a plate spring portion (7) and a mass portion (8) provided on the beam portion, and the semiconductor type acceleration element and its surroundings. A circuit board (9) is mounted and is mounted on the base (1), and a metallic shell (13) is formed by welding the circuit board (4) from above and covering the entire circuit board (4) at its peripheral edge. And a semiconductor type acceleration sensor, wherein the semiconductor type acceleration sensor element is covered with a sensor cover (20).
JP17448293A 1993-07-14 1993-07-14 Semiconductor-type acceleration sensor Pending JPH0727787A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17448293A JPH0727787A (en) 1993-07-14 1993-07-14 Semiconductor-type acceleration sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17448293A JPH0727787A (en) 1993-07-14 1993-07-14 Semiconductor-type acceleration sensor

Publications (1)

Publication Number Publication Date
JPH0727787A true JPH0727787A (en) 1995-01-31

Family

ID=15979258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17448293A Pending JPH0727787A (en) 1993-07-14 1993-07-14 Semiconductor-type acceleration sensor

Country Status (1)

Country Link
JP (1) JPH0727787A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2361547A1 (en) * 2008-10-13 2011-06-20 Askey Computer Corp. Circuit board of communication product and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2361547A1 (en) * 2008-10-13 2011-06-20 Askey Computer Corp. Circuit board of communication product and manufacturing method thereof

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