JPH07276212A - Grinding method and grinding device - Google Patents

Grinding method and grinding device

Info

Publication number
JPH07276212A
JPH07276212A JP6689094A JP6689094A JPH07276212A JP H07276212 A JPH07276212 A JP H07276212A JP 6689094 A JP6689094 A JP 6689094A JP 6689094 A JP6689094 A JP 6689094A JP H07276212 A JPH07276212 A JP H07276212A
Authority
JP
Japan
Prior art keywords
tape
grinding
polishing
ultrasonic cleaning
foreign matter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6689094A
Other languages
Japanese (ja)
Inventor
Hiroyuki Tenmyo
浩之 天明
Tetsuya Yamazaki
哲也 山崎
Eiji Matsuzaki
永二 松崎
Hidetaka Shigi
英孝 志儀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6689094A priority Critical patent/JPH07276212A/en
Publication of JPH07276212A publication Critical patent/JPH07276212A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To remove foreign matter which adheres on a surface of an object to be ground and a surface of a grinding tape so as to prevent occurrence of grinding scars due to foreign matter by grinding while effecting ultrasonic cleaning for at least either of a face to be ground and the grinding tape. CONSTITUTION:A grinding tape 2 is fed from a tape supply reel 1 to wind it up by a tape winding reel 3. Feed speed of the grinding tape 2 is adjusted by a drive roller 4 on the halfway of winding process to bring the tape 2 into contact with a workpiece 6 by a contact roller 5 for grinding. At this time, the contact roller vibrates to gain distance of grinding. Furthermore, this grinding device is provided with a filter unit 9 for washing a tape for grinding 3 and removing foreign matter, an ultrasonic cleaning bath 7 for grinding tape which is composed of a pump 10, a filter 12 for cleaning an object to be ground and removing the foreign matter, and an ultrasonic cleaning bath 8 for object to be ground on which a pump 13 is mounted. Consequently, it is possible to highly flatten a difference in steps of insulating layers on wires having high aspect ratio on a substrate of electronic circuit and eliminate scars which occur during grinding of a plastic lens.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、有機材料、無機材料、
または、それら複合材料の研磨方法ならびに研磨装置に
関し、特に、表面の研磨傷を嫌う電子回路用薄膜多層基
板や、プラスチックレンズの精密加工に好適な研磨方法
と研磨装置に係るものである。
The present invention relates to an organic material, an inorganic material,
Further, the present invention relates to a polishing method and a polishing apparatus for these composite materials, and particularly to a polishing method and a polishing apparatus suitable for precision processing of a thin film multilayer substrate for electronic circuits and plastic lenses, which are averse to polishing scratches on the surface.

【0002】[0002]

【従来の技術】近年研磨技術は、従来の機械部品の表面
研磨のみでなく、電子部品(薄膜回路基板や磁気ディス
ク)、光学材料(プラスチックレンズ)等の高度な表面を
求められる分野にも利用されるようになってきた。電子
部品に研磨が用いられた例として、薄膜回路の絶縁層の
形成工程で有機絶縁材を硬化させた後、接続導体部の上
面に残存する絶縁剤を機械加工により除去、平坦化する
方法がある。これらについては、特開昭62-263697号公
報、特開平2-290095号公報や特開平3-268392号公報にお
いて論じられている。また、特開平4-84495号公報に
は、多層プリント配線板の積層時に穴から表面に溶けだ
した樹脂を硬化後ベルトサンダーにて研磨する方法につ
いて述べられている。また特開平4-119688号公報には、
基板の向きを変え、複数回研磨することにより研磨傷を
低減する研磨装置について述べられている。このように
電子部品の研磨方法としては、従来テープ研磨、サンド
ペーパー、ベルトサンダーによる研磨等の方法が用いら
れてきた。
2. Description of the Related Art In recent years, polishing technology has been used not only for conventional surface polishing of mechanical parts, but also for fields requiring advanced surfaces such as electronic parts (thin film circuit boards and magnetic disks) and optical materials (plastic lenses). It has started to be done. As an example in which polishing is used for electronic parts, there is a method in which after the organic insulating material is cured in the step of forming the insulating layer of the thin film circuit, the insulating agent remaining on the upper surface of the connecting conductor portion is removed by machining and flattened. is there. These are discussed in JP-A-62-263697, JP-A-2-290095 and JP-A-3-268392. Further, Japanese Patent Application Laid-Open No. 4-84495 describes a method of polishing a resin, which has melted from the hole to the surface during lamination of a multilayer printed wiring board, after curing with a belt sander. Further, in Japanese Patent Laid-Open No. 4-119688,
A polishing apparatus that reduces polishing scratches by changing the direction of the substrate and polishing multiple times is described. As described above, as methods for polishing electronic components, methods such as tape polishing, sandpaper, and belt sander polishing have been conventionally used.

【0003】[0003]

【発明が解決しようとする課題】従来研磨に用いられて
きた研磨布や研磨テープは、クリーンルーム等の高洗浄
室で製造されたものではないためテープ表面に対する異
物による汚染の懸念がある。また仮に高洗浄室で製造さ
れたとしてもテープ表面には研磨中に砥粒や被研磨物か
ら出た異物による汚染の懸念がある。これらの異物は、
微細加工を行う際に、表面の研磨傷の原因となり、歩留
まりを低下させる原因である。そのため、従来の研磨方
法では、研磨液等を用いて研磨剤を流すことによりテー
プや被研磨物から出た異物を研磨面より除去する方法が
用いられてきた。しかし、異物の粒子が細かくなると被
研磨物と異物の吸着力が異物の大きさに比べて大きくな
り、研磨液を流すだけでは粒子が取れないといった問題
があった。
Since the polishing cloth and the polishing tape that have been conventionally used for polishing are not manufactured in a high cleaning room such as a clean room, there is a concern that the tape surface may be contaminated by foreign matter. Even if the tape is manufactured in a high-cleaning room, there is a concern that the tape surface may be contaminated by the abrasive grains or foreign matters generated from the object to be polished during polishing. These foreign objects are
This is a cause of polishing scratches on the surface when performing fine processing, and is a cause of lowering the yield. Therefore, in the conventional polishing method, a method has been used in which a foreign substance that has come out of the tape or the object to be polished is removed from the polished surface by flowing an abrasive with a polishing liquid or the like. However, when the particles of the foreign matter become finer, the adsorption force between the object to be polished and the foreign matter becomes larger than the size of the foreign matter, and there is a problem that the particles cannot be removed only by flowing the polishing liquid.

【0004】本発明の目的は、被研磨物表面の表面に付
着した異物を積極的に取り除くことにより清浄な表面を
得、異物等による研磨傷が発生しない研磨方法と研磨装
置を提供することにある。
It is an object of the present invention to provide a polishing method and a polishing apparatus in which a foreign material attached to the surface of an object to be polished is positively removed to obtain a clean surface and polishing scratches due to the foreign material do not occur. is there.

【0005】[0005]

【課題を解決するための手段】本発明は、上記課題を解
決するために、被研磨物となる基板と研磨テープの少な
くとも一方を超音波洗浄しながら研磨するようにしたも
のである。また、本発明による研磨方法を実現させるた
めに、研磨装置の基板固定治具と研磨用テープ、クーラ
ントの少なくとも1つに超音波洗浄機能を具備させたも
のである。
In order to solve the above problems, the present invention is such that at least one of a substrate to be polished and a polishing tape is ultrasonically cleaned and polished. Further, in order to realize the polishing method according to the present invention, at least one of the substrate fixing jig, the polishing tape and the coolant of the polishing apparatus is provided with an ultrasonic cleaning function.

【0006】[0006]

【作用】本発明によれば、被研磨物や研磨用テープの超
音波洗浄が可能になる。このため、被研磨物表面や研磨
テープ表面に付着している異物が除去され、異物に起因
した研磨傷の発生を防止できる。
According to the present invention, the object to be polished and the polishing tape can be ultrasonically cleaned. For this reason, foreign matter adhering to the surface of the object to be polished or the surface of the polishing tape is removed, and the occurrence of polishing scratches due to the foreign matter can be prevented.

【0007】[0007]

【実施例】本発明の実施例を図1に示す。この図は、本
発明を適用したテープ研磨装置の構成を示したものであ
る。本装置では、テープ供給リール1.から研磨テープ
2.を送りだし、テープ巻取りリール3.で巻取るよう
になっている。途中の駆動ローラ4.で研磨テープの送
り速度を調節し、コンタクトローラ5.でワーク6.と
接し、研磨する構造になっている。このときコンタクト
ローラ5.が振動し、研磨する距離を稼いでいる。本発
明の特徴は、図1の研磨テープ用超音波洗浄槽7.と被
研磨物用の超音波洗浄槽8.を設けた点である。研磨テ
ープ用超音波洗浄槽は、異物除去用のフィルターユニッ
ト9.とポンプ10.から構成されている。その水流方
向を図中11.に示す。また、被研磨物用の超音波洗浄
槽にも同様に異物除去用のフィルターユニット12.と
ポンプ13が搭載されている。この図1では、被研磨物
用の超音波洗浄槽と研磨テープ用超音波洗浄槽が別々に
記されているが、研磨テープ洗浄剤と被研磨物用の潤滑
剤を同一の物質で使用することも可能であり、これをま
とめて構成した装置の例を図2に示す。異物除去用のフ
ィルターユニット9.とポンプ10.、被研磨物用の超
音波洗浄槽用の異物除去用のフィルターユニット12.
とポンプ13を図2のフィルターユニット14にまとめ
ている。図3に研磨液の供給口に超音波洗浄機を取り付
けた例を示す。図3には、研磨剤散布用のノズルに超音
波発生源15を搭載したものであり、これにもフィルタ
ーユニット16が搭載してある。
FIG. 1 shows an embodiment of the present invention. This figure shows the structure of a tape polishing apparatus to which the present invention is applied. In this device, the tape supply reel 1. To polishing tape 2. The tape take-up reel 3. It is designed to be wound up with. Drive roller on the way 4. Adjust the feed rate of the polishing tape with and contact roller 5. Work 6. It has a structure that contacts with and polishes. At this time, contact roller 5. Vibrates and gains a distance to polish. The feature of the present invention is that the ultrasonic cleaning tank for polishing tape 7 of FIG. 7. Ultrasonic cleaning tank for polishing objects That is the point. Ultrasonic cleaning tank for polishing tape is a filter unit for removing foreign substances 9. And pump 10. It consists of The water flow direction is 11. Shown in. Further, in the ultrasonic cleaning tank for the object to be polished, the filter unit 12. And a pump 13 are mounted. In FIG. 1, the ultrasonic cleaning tank for the object to be polished and the ultrasonic cleaning tank for the polishing tape are shown separately, but the polishing tape cleaning agent and the lubricant for the object to be polished are the same substance. It is also possible to do so, and an example of an apparatus configured by combining them is shown in FIG. Filter unit for removing foreign substances 9. And pump 10. Filter unit for removing foreign matter for ultrasonic cleaning tank for polishing object 12.
And the pump 13 are combined in the filter unit 14 of FIG. FIG. 3 shows an example in which an ultrasonic cleaning machine is attached to the supply port of the polishing liquid. In FIG. 3, an ultrasonic wave generation source 15 is mounted on a nozzle for spraying an abrasive, and a filter unit 16 is also mounted on this.

【0008】以下、上記装置による研磨を薄膜基板に適
用した例について説明する。
An example in which polishing by the above apparatus is applied to a thin film substrate will be described below.

【0009】(例1):研磨に供した基板の例を図4に
示す。基板17.は、ガラス(コーニング製7059ガ
ラス)を用いた。その上に日立化成工業(株)製ポリイミ
ドワニスPIQ 18.をスピンコートし、キュアベーク
し、最終膜厚10μmとした基板を研磨した。研磨砥粒
には、アルミナを用い、湿式で研磨を行った。研磨条件
を表1に示す。
(Example 1): FIG. 4 shows an example of a substrate subjected to polishing. Substrate 17. Used glass (Corning 7059 glass). On top of that, Hitachi Chemical Co., Ltd. polyimide varnish PIQ 18. Was spin-coated, cured and baked, and the substrate having a final film thickness of 10 μm was polished. Alumina was used as the abrasive grains, and wet polishing was performed. The polishing conditions are shown in Table 1.

【0010】表1 研磨条件 No 砥粒粒度 研磨回数 荷重 1 # 2000 20パス(10往復) 500g/inch 2 # 4000 同上 同上 3 # 8000 同上 同上 4 #10000 同上 同上 超音波洗浄装置を搭載していない従来の装置で研磨した
基板の表面は、研磨傷が入っており、その深さは、約1.
5μm、数は10か所程度であり、傷の延べ延長は、25mm
程度であった。
Table 1 Polishing condition No Abrasive grain size Polishing frequency Load 1 # 2000 20 pass (10 reciprocations) 500g / inch 2 # 4000 Same as above 3 Same as above 3 # 8000 Same as above 4 # 10000 Same as above Same as above No ultrasonic cleaning device is installed The surface of the substrate polished by conventional equipment contains polishing scratches, and the depth is about 1.
5μm, the number is about 10 places, the total extension of the scratch is 25mm
It was about.

【0011】一方、新たに超音波洗浄機と異物除去用の
フィルターユニット(テープ、被研磨物の両者)を取り付
けた結果、深さ1μm以上の傷はなくなり、基板上の数
箇所に深さ0.025μmの傷が残る程度であった。この効
果は、明らかに、被研磨物表面と研磨用テープ表面を超
音波洗浄しながら研磨を行うことによって発生したもの
である。この例では、被研磨物表面と研磨用テープの何
れに対しても超音波洗浄を施しているが、被研磨物面と
研磨用テープの何れかに超音波洗浄を施した場合にも、
この例よりは弱くはなるが、効果が得られる。
On the other hand, as a result of newly installing an ultrasonic cleaning machine and a filter unit for removing foreign matters (both tape and object to be polished), scratches having a depth of 1 μm or more disappear, and a depth of 0.025 is found at several places on the substrate. The scratches of μm remained. This effect is apparently caused by polishing while ultrasonically cleaning the surface of the object to be polished and the surface of the polishing tape. In this example, ultrasonic cleaning is applied to both the surface to be polished and the polishing tape, but even when ultrasonic cleaning is applied to either the surface to be polished or the polishing tape,
It is weaker than this example, but the effect is obtained.

【0012】(例2):近年要求される高性能の電子回
路部品の製造プロセスにおいては、性能の大幅向上のた
め高密度、高アスペクト比の配線パターンを高度に平坦
化する方法が必要とされている。そのサンプル試料の作
製方法を図5に示す。アルミナ基板19.上にポリイミ
ド18.を形成し、その上に配線層とスタッド20.を
形成し、さらにポリイミドを形成して絶縁層21.を形
成する。次に配線の段差を研磨し、2層目の配線をスパ
ッタ成膜とホトエッチングにより形成する。配線は、膜
厚20±2μmでパターン形状は20μmライン&スペースとし
た。絶縁層21.のポリイミドの膜厚は、フルキュア後
で、20μmとした。この凹凸基板を本発明による装置を
用い、表1の条件で研磨した。
(Example 2): In the manufacturing process of high-performance electronic circuit parts which has been demanded in recent years, a method of highly flattening a wiring pattern having a high density and a high aspect ratio is required in order to greatly improve the performance. ing. A method for manufacturing the sample sample is shown in FIG. Alumina substrate 19. Polyimide on top 18. A wiring layer and studs 20. Of the insulating layer 21. To form. Next, the step of the wiring is polished, and the second wiring is formed by sputtering film formation and photoetching. The wiring has a film thickness of 20 ± 2 μm and the pattern shape is a line and space of 20 μm. Insulating layer 21. The film thickness of polyimide was set to 20 μm after full cure. This uneven substrate was polished under the conditions shown in Table 1 using the device according to the present invention.

【0013】その結果、従来方法で作成した基板は、2
層目配線のうち40%が深い研磨傷により断線していた
が、本発明による装置を用いたところ深い研磨傷が存在
せず、断線率も1%以下となった。
As a result, the number of substrates produced by the conventional method is 2
Although 40% of the layer wiring was broken due to deep polishing scratches, no deep polishing scratches were found when the device according to the present invention was used, and the breaking rate was 1% or less.

【0014】いずれの実施例においても従来法では得ら
れないような研磨傷の無い表面が得られ、本発明の有効
性が実証された。
In each of the examples, a surface without polishing scratches, which cannot be obtained by the conventional method, was obtained, and the effectiveness of the present invention was verified.

【0015】また、搭載したフィルターユニットをより
高度な装置にすることにより、半導体等の超精密加工に
おいても研磨傷を発生させること無く表面研磨が出来る
と考えられる。
Further, it is considered that the surface polishing can be performed without generating polishing scratches even in ultra-precision machining of semiconductors and the like by using a more sophisticated device as the mounted filter unit.

【0016】このようにして高度に平坦化かつ微細に加
工された基板表面上においては、種々の微細加工を高精
度に実行することが可能となり、更に複雑な構造体を得
ることが出来る等の利点がある。例えば、電子回路基板
においては、微細パターンを形成し、上下方向への微細
かつ高密度の接続をすることが可能となり、以上の工程
を繰り返すことにより、高密度薄膜多層基板を形成する
ことが可能である。
On the surface of the substrate that has been highly flattened and finely processed in this manner, various fine processings can be performed with high accuracy, and a more complicated structure can be obtained. There are advantages. For example, in electronic circuit boards, it is possible to form fine patterns and make fine and high-density connections in the vertical direction. By repeating the above steps, it is possible to form high-density thin-film multilayer boards. Is.

【0017】[0017]

【発明の効果】本発明によれば、様々な材料の研磨を被
研磨物の表面に研磨傷を発生させること無く研磨を行う
ことが出来る効果がある。そのため、電子回路基板で
は、高アスペクト比の配線による絶縁層の段差を高度に
平坦化することができる。また、プラスチックレンズな
どを研磨傷なしで研磨することが出来る効果がある。
According to the present invention, it is possible to polish various materials without causing scratches on the surface of the object to be polished. Therefore, in the electronic circuit board, it is possible to highly flatten the step of the insulating layer due to the wiring having the high aspect ratio. Further, there is an effect that a plastic lens or the like can be polished without polishing scratches.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の装置構成図である。FIG. 1 is a device configuration diagram of the present invention.

【図2】本発明の装置構成図である。FIG. 2 is a device configuration diagram of the present invention.

【図3】本発明の装置構成図である。FIG. 3 is a device configuration diagram of the present invention.

【図4】研磨に供した試料の構成(ポリイミド塗布膜)
を示す図である。
FIG. 4 is a structure of a sample subjected to polishing (polyimide coating film)
FIG.

【図5】研磨に供した試料の構成(段差付きポリイミド
塗布膜)を示す図である。
FIG. 5 is a diagram showing a structure of a sample subjected to polishing (polyimide coating film with step).

【符号の説明】[Explanation of symbols]

1…テープ供給リール、 2…研磨テープ、 3…テープ巻取りリール、 4…駆動ローラ、 5…コンタクトローラ、 6…ワーク、 7…研磨テープ用超音波洗浄槽、 8…被研磨物用の超音波洗浄槽、 9…フィルターユニット、 10…ポンプ、 11…水流方向、 12…フィルターユニット、 13…ポンプ、 14…フィルターユニット、 15…超音波発生源、 16…フィルターユニット、 17…ガラス基板、 18…ポリイミド、 19…アルミナ基板、 20…配線層とスタッド、 21…絶縁層。 DESCRIPTION OF SYMBOLS 1 ... Tape supply reel, 2 ... Polishing tape, 3 ... Tape take-up reel, 4 ... Drive roller, 5 ... Contact roller, 6 ... Work, 7 ... Ultrasonic cleaning tank for polishing tape, 8 ... Ultra for polishing objects Sonic cleaning tank, 9 ... Filter unit, 10 ... Pump, 11 ... Water flow direction, 12 ... Filter unit, 13 ... Pump, 14 ... Filter unit, 15 ... Ultrasonic source, 16 ... Filter unit, 17 ... Glass substrate, 18 ... Polyimide, 19 ... Alumina substrate, 20 ... Wiring layer and stud, 21 ... Insulating layer.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 志儀 英孝 神奈川県横浜市戸塚区吉田町292番地株式 会社日立製作所生産技術研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hidetaka Shigi 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Stock Engineering Institute, Hitachi, Ltd.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】被研磨面と研磨用テープの少なくとも一方
に対して超音波洗浄を施しながら行うことを特徴とする
有機材料、無機材料、および、それら複合材料の研磨方
法。
1. A method of polishing an organic material, an inorganic material, and a composite material thereof, which comprises performing ultrasonic cleaning on at least one of a surface to be polished and a polishing tape.
【請求項2】請求項1を達成するために、テープ研磨装
置にテープ洗浄用、基板洗浄用の超音波洗浄機を搭載し
たことを特徴とするテープ研磨装置。
2. The tape polishing apparatus according to claim 1, wherein the tape polishing apparatus is equipped with an ultrasonic cleaning machine for cleaning the tape and cleaning the substrate.
【請求項3】請求項1を達成するために、テープ研磨装
置のクーラント供給口に超音波発生源を搭載したことを
特徴とするテープ研磨装置。
3. The tape polishing apparatus according to claim 1, wherein an ultrasonic wave generation source is mounted on a coolant supply port of the tape polishing apparatus.
【請求項4】請求項1を達成するために、請求項2、請
求項3に示す少なくとも1つの超音波洗浄機を搭載した
ことを特徴とするテープ研磨装置。
4. A tape polishing apparatus, characterized in that at least one ultrasonic cleaning machine according to claim 2 or 3 is mounted in order to achieve claim 1.
【請求項5】請求項3と請求項4に記載した洗浄を効果
的に行うために、超音波洗浄槽の液体を循環させ、循環
している液体をフィルターユニットに通すことを特徴と
するテープ研磨装置。
5. A tape characterized by circulating a liquid in an ultrasonic cleaning tank and passing the circulating liquid through a filter unit in order to effectively carry out the cleaning described in claims 3 and 4. Polishing equipment.
【請求項6】請求項1から5に記載した研磨方法あるい
は、研磨装置によって製造した部品。
6. A component manufactured by the polishing method or the polishing apparatus according to claim 1.
JP6689094A 1994-04-05 1994-04-05 Grinding method and grinding device Pending JPH07276212A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6689094A JPH07276212A (en) 1994-04-05 1994-04-05 Grinding method and grinding device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6689094A JPH07276212A (en) 1994-04-05 1994-04-05 Grinding method and grinding device

Publications (1)

Publication Number Publication Date
JPH07276212A true JPH07276212A (en) 1995-10-24

Family

ID=13328965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6689094A Pending JPH07276212A (en) 1994-04-05 1994-04-05 Grinding method and grinding device

Country Status (1)

Country Link
JP (1) JPH07276212A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002542055A (en) * 1999-04-23 2002-12-10 スリーエム イノベイティブ プロパティズ カンパニー Glass grinding method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002542055A (en) * 1999-04-23 2002-12-10 スリーエム イノベイティブ プロパティズ カンパニー Glass grinding method
JP4808848B2 (en) * 1999-04-23 2011-11-02 スリーエム イノベイティブ プロパティズ カンパニー Glass grinding method

Similar Documents

Publication Publication Date Title
US6276997B1 (en) Use of chemical mechanical polishing and/or poly-vinyl-acetate scrubbing to restore quality of used semiconductor wafers
US5683289A (en) CMP polishing pad conditioning apparatus
KR100222228B1 (en) Regeneration method and apparatus of wafer and substrate
JPH0839407A (en) Device for grinding and polishing wafer used in removal of silicon dust
JP2005039293A (en) Method of cleaning cmp pad conditioning disk
US10573610B2 (en) Method for wafer level packaging
KR100443770B1 (en) Method and apparatus for polishing a substrate
JP2001332517A (en) Chemical mechanical polishing method for substrate
US20030168169A1 (en) Chemical-mechanical polishing apparatus, polishing pad and method for manufacturing semiconductor device
JPH07276212A (en) Grinding method and grinding device
US5893983A (en) Technique for removing defects from a layer of metal
US20040089326A1 (en) Method for post chemical-mechanical planarization cleaning of semiconductor wafers
JPH06226601A (en) Polishing method and device
JPH06260772A (en) Lessening method of mechanical polish flaw
JP2007242659A (en) Printed wiring board and its manufacturing process
EP0750968B1 (en) Apparatus for conditioning a polishing pad
JP2003311605A (en) Abrasive grain burying device and method, and polishing device using it
JPH04162585A (en) Manufacture of printed wiring board
JPH08125336A (en) Manufacture of thin film multilayer wirings
JP2004322305A (en) Substrate surface flattening/cleaning device
US20200098637A1 (en) Method for fabricating a semiconductor device
JPH04284629A (en) Manufacture of semiconductor substrate
JP2001150351A (en) Electrodeposition grinding wheel for dressing
KR20040006369A (en) Method of cleaning of semiconductor substrate
KR200293789Y1 (en) Device for preventing hardening slurry in polishing apparatus