JPH07258843A - Sputtering device - Google Patents

Abstract

PURPOSE:To enable highly uniform erosion on a target by providing a sputtering device with a sputtering cathode parallel with the surface formed by the magnetic neutral line formed within a vacuum chamber and providing the device with a substrate electrode on the opposite side thereof. CONSTITUTION:The cathode 10 is hermetically mounted at the top part of a plasma generating chamber 2 and a DC bias voltage is applied on this cathode 10. The substrate 13 is mounted to face the target 12 in the substrate treating chamber 3. The highly uniform high-frequency discharge plasma is generated in the wide density range by an antenna 8 for introducing a high-frequency electric field on the surface of the target 12 within the magnetic neutral line 7 formed in the plasma generating chamber 2. A doughnut-shaped magnetic material 16 is disposed in the upper part near the substrate 3 to make the magnetic field on the substrate 13 as small as possible. Of the particle sputtered from the target 12, the particles advancing to the side walls of the chamber 1 are captured by a cylindrical deposition preventive body 9. The diameter of the magnetic neutral line 7 and the distance to the target 12 are changed during the process by controlling the currents to be passed to coils 4, 5, 6.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputtering apparatus for sputtering a target using plasma to deposit a substance on a substrate such as a semiconductor or an electronic component.

[0002]

2. Description of the Related Art Conventionally, as a sputtering apparatus, a magnetron type using a magnet has been mainly used. recently,
An ECR discharge type sputtering apparatus using electron cyclotron resonance has also been proposed. However, erosion uniformity in a large area cannot be obtained by either method,
The low utilization efficiency of the target is a problem. Further, since uniform erosion cannot be performed, there are problems such as generation of dust from a portion that is not eroded, and non-uniformity of large area film formation. FIG. 4 of the accompanying drawings shows an example of a conventionally used magnetron sputtering apparatus. That is, the illustrated apparatus has a substrate holder B that supports the substrate A.
Is placed in the vacuum container C, the cathode E is attached to the substrate holder B via the insulator D so as to serve as a lid of the vacuum container C, and the cathode E is mounted on the back surface opposite to the side to which the target F is attached. A double annular electromagnet G is attached, and a cathode E is connected to a DC bias power source H. In such a structure, since the magnetic pole is located at the center, the parallel magnetic field component with respect to the surface of the target F at the center becomes zero. Therefore, since the magnetic field component orthogonal to the electric field in the plasma sheath becomes zero at the center, E × B drift does not occur and erosion is reduced. In order to make up for this drawback, there is also known one in which a ring-shaped permanent magnet is provided on the back surface of the cathode so as to orbit it. However, this method requires a self-revolving mechanism, which causes problems such as dust generation and mechanism reliability.

[0003]

The ideal plasma for achieving large area uniform erosion is to form a uniform high density plasma on the target. However, even if it says high density, the conductivity of the sheath becomes higher when the density is 5 × 10 ¹² cm ⁻³ or more, and the sheath voltage necessary for sputtering is not generated, so the limit of high density is 5 × 10 ¹² cm ^{−. It} is considered to be around ³ . For example, in the case of applying to ultra-VLSI processing, it is necessary to perform sputter film formation on holes having a hole diameter of 0.2 μm and an aspect ratio of 5. In such a case, it is necessary to achieve high-density and high-uniformity plasma on the order of 10 ^-4 Torr. In the conventional magnetron sputtering device, an electromagnet or a permanent magnet is placed behind the target, so that uniform plasma cannot be formed over the entire surface of the target, and stable discharge is difficult to obtain at 5 × 10 ⁻⁴ Torr or less. There was a tendency to say. In order to solve the above problems, the present invention can generate plasma even at a pressure of 5 × 10 ⁻⁴ Torr or less because electrons are likely to remain in a magnetic neutral wire formed in a vacuum container. It is an object of the present invention to provide a sputtering apparatus that enables highly uniform erosion on a target.

[0004]

In order to achieve the above object, according to the first aspect of the present invention, a sputtering phenomenon using plasma in a vacuum chamber in which at least a part of the side wall is made of a dielectric is used. In a sputtering apparatus for forming a film on a substrate by using a magnetic field generating means for forming a magnetic neutral line which is a position of zero magnetic field continuously existing in a vacuum chamber, and a magnetic field generating means. An electric field generating means for applying an electric field along the magnetic neutral wire formed in the vacuum chamber by the means to generate discharge plasma in the magnetic neutral wire, and a surface formed by the magnetic neutral wire to be formed. It is characterized in that the sputter cathode is provided in parallel and at a position apart from this surface, and the substrate electrode is provided at a position opposite to the surface formed by the magnetic neutral line from the sputter cathode.
The electric field generating means preferably consists of single or multiple radio frequency coils and may be placed near the magnetic neutral. Further, the magnetic field generating means can be composed of three magnetic field generating coils arranged coaxially, and by causing currents in opposite directions to flow in adjacent coils, each coil is placed near the surface of the intermediate coil. An annular magnetic neutral line, which is a continuation of zero magnetic field positions formed by the generated magnetic fields canceling each other, can be formed. This annular magnetic neutral wire can be made larger or smaller in diameter by adjusting the currents flowing through the three magnetic field generating coils, and can be formed above or below. The sputter cathode can be placed on or near the surface formed by the magnetic neutral wire.

Further, according to the second aspect of the present invention, a film is formed on the substrate by utilizing a sputtering phenomenon using plasma in a vacuum chamber in which at least a part of the side wall is made of a dielectric material. In the sputtering apparatus, a magnetic field generating means for forming a magnetic neutral line which is a position where a magnetic field is continuously present in the vacuum chamber, and a magnetic neutral line formed in the vacuum chamber by the magnetic field generating means. An electric field generating means for generating an electric discharge plasma in the magnetic neutral wire by applying an electric field along with, and a sputter which is provided inside the dielectric side wall of the vacuum chamber and blocks a sputtered substance toward the inner surface of the dielectric side wall of the vacuum chamber. And a substance shielding means. This spatter substance shielding means is
Preferably, it may comprise a hollow disk-shaped shield provided in the vacuum chamber between the sputter cathode and the electric field generating means, and blocking the sputtered particles toward the inner surface of the dielectric side wall of the vacuum chamber located inside the electric field generating means. . Alternatively, the sputtering material shielding means may be a thin-walled cylindrical shield provided along the inner surface of the dielectric side wall of the vacuum chamber, or may be used in combination with a hollow disk-shaped shield.

According to the third aspect of the present invention, a film is formed on a substrate by utilizing a sputtering phenomenon using plasma in a vacuum chamber in which at least a part of the side wall is made of a dielectric material. In the sputtering apparatus, a magnetic field generating means for forming a magnetic neutral line which is a position where a magnetic field is continuously present in the vacuum chamber, and a magnetic neutral line formed in the vacuum chamber by the magnetic field generating means. An electric field generating means for generating a discharge plasma in the magnetic neutral wire by applying an electric field along with the electric field generated by the electric field generating means, which is a vacuum of an electrostatic field component which is not uniform in the circumferential direction. In order to prevent the invasion into the chamber, it is provided with a Faraday cage composed of a plurality of strip-shaped metal thin pieces arranged along the circumferential direction and electrically connected to each other at one end. It is set to.

According to the fourth aspect of the present invention, a film is formed on a substrate by utilizing a sputtering phenomenon using plasma in a vacuum chamber in which at least a part of the side wall is made of a dielectric material. In the sputtering apparatus, a magnetic field generating means for forming a magnetic neutral line which is a position where a magnetic field is continuously present in the vacuum chamber, and a magnetic neutral line formed in the vacuum chamber by the magnetic field generating means. An electric field generating means for generating a discharge plasma in the magnetic neutral wire by applying an electric field along with, and means for expelling unnecessary substances including sputtered substances adhered to the inner surface of the dielectric side wall of the vacuum chamber. There is. The means for expelling unwanted material, including sputtered material, may preferably comprise means for generating a high frequency induction field for high frequency cleaning. Alternatively,
The means for expelling the unnecessary material including the sputtered material may be a means for heating the vacuum chamber wall, or a combination of both may be possible.

Further, according to the fifth aspect of the present invention, a film is formed on a substrate by utilizing a sputtering phenomenon using plasma in a vacuum chamber in which at least a part of the side wall is made of a dielectric material. In the sputtering apparatus, a magnetic field generating means for forming a magnetic neutral line which is a position where a magnetic field is continuously present in the vacuum chamber, and a magnetic neutral line formed in the vacuum chamber by the magnetic field generating means. An electric field generating means for generating a discharge plasma in this magnetic neutral line by applying an electric field along with the outer wall of the magnetic field generating means are provided in close contact with each other so that an unnecessary magnetic field is not formed in the outer space of the magnetic field generating means. And a cylindrical ferromagnet.

Furthermore, according to the sixth aspect of the present invention, a film is formed on the substrate by utilizing a sputtering phenomenon using plasma in a vacuum chamber in which at least a part of the side wall is made of a dielectric material. In the sputtering apparatus described above, magnetic field generating means for forming a magnetic neutral line which is a position of zero magnetic field continuously existing in the vacuum chamber, and magnetic neutrality formed in the vacuum chamber by the magnetic field generating means. It has an electric field generating means for generating an electric discharge plasma in this magnetic neutral wire by applying an electric field along the line, and a donut-shaped ferromagnetic material provided in the upper part near the substrate and minimizing the magnetic field on the substrate as much as possible. It is characterized by that.

[0010]

In the sputtering apparatus according to each invention of the present invention thus constituted, the spatial structure of the magnetic field generating means is
By changing the current flowing in the magnetic field generating means, the position or shape of the magnetic neutral line, that is, the zero magnetic field, can be arbitrarily changed with respect to the sputter target, so that highly uniform sputtering can be performed over the entire surface of the target by high density plasma become.

In the sputtering apparatus according to the third aspect of the present invention, in order to prevent the electrostatic field component of the electric field generated by the electric field generating means that is not uniform in the circumferential direction from entering the vacuum chamber, By providing a Faraday cage composed of a plurality of strip-shaped metal flakes that are arranged and electrically coupled to each other, only the electric field that is not uniform in the circumferential direction among the electromagnetic field components introduced by the electric field generating means is shielded in the circumferential direction. A uniform component is not shielded. Therefore, even when a conductive (metal) target is sputtered, a stable sputter (plasma) condition can be maintained without blocking high-frequency components introduced by the conductor attached to the dielectric part.
When a conductive (metal) target is used, it is, of course, necessary to prevent adhesion of a conductive film between the strip-shaped metal flakes.

When the substance sputtered on the dielectric portion into which the high frequency electromagnetic field is introduced is a substance having a low ion energy and a high sputtering yield, as in the fourth aspect of the present invention, the dielectric of the vacuum chamber is reduced. It is effective to provide a means for driving out unnecessary substances including sputtered substances adhering to the inner surface of the body side wall, and as this means, a device constituted by means for generating a high frequency induction electric field for high frequency cleaning.

Further, when a substance having a high vapor pressure at a relatively low temperature adheres to the high frequency electric field introducing window, a means for excluding unnecessary substances including sputtered substances adhering to the inner surface of the dielectric side wall of the vacuum chamber is provided. An apparatus according to the fourth aspect of the present invention, which is provided and which comprises means for heating the walls of the vacuum chamber, may advantageously be used.

[0014]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an embodiment of the sputtering apparatus according to the present invention. In FIG. 1, reference numeral 1 denotes a vacuum chamber, which includes a cylindrical plasma generation chamber 2 having a quartz side wall and a substrate processing chamber 3. Three electromagnetic coils 4, 5 and 6 forming magnetic field generating means are provided on the outer side of the cylindrical side wall forming the cylindrical plasma generation chamber 2, and two upper and lower electromagnetic coils as shown in the figure. The same constant current in the same direction is made to flow in 4 and 6, and the opposite current is made to flow in the middle electromagnetic coil 5. As a result, a continuous magnetic field zero position is formed inside the plasma generating chamber 2 near the level of the intermediate electromagnetic coil 5, and a ring-shaped magnetic neutral wire 7 is formed. The size of the ring-shaped magnetic neutral wire 7 can be appropriately set by changing the ratio of the current flowing through the upper and lower two electromagnetic coils 4 and 6 and the current flowing through the intermediate electromagnetic coil 5. The position of the ring-shaped magnetic neutral wire 7 in the up-down direction is determined by the ratio of the current values passed through the electromagnetic coil 4 and the electromagnetic coil 6. For example, when the current flowing through the upper electromagnetic coil 4 is made larger than the current flowing through the lower electromagnetic coil 6, the position where the magnetic neutral line can be formed is lowered toward the electromagnetic coil 6 side. Go up to the coil 4 side. Further, as the current flowing through the intermediate electromagnetic coil 5 is increased, the diameter of the ring of magnetic neutral wire becomes smaller, and at the same time, the gradient of the magnetic field at the position where the magnetic field is zero becomes gentle. A high-frequency electric field introducing antenna 8 concentrically forming an electric field generating means is provided inside the intermediate electromagnetic coil 5 and is connected to a 13.56 MHz high-frequency power source. This antenna 8 can be configured as a single or multiple high frequency coil. The three electromagnetic coils 4, 5, 6 also function as a means for generating a high frequency induction electric field for high frequency cleaning and driving out unnecessary substances including sputtered substances adhering to the inner surface of the side wall of the plasma generation chamber 2 of the vacuum chamber 1. ing. In addition, the cylindrical plasma generation chamber 2
On the inner side of the cylindrical side wall which constitutes the above, a cylindrical cylindrical anti-adhesive body 9 which constitutes a sputtered substance shielding means is provided along substantially the entire height thereof so that the sputtered substance does not adhere to the inner surface of the cylindrical side wall. I have to. A cathode 10 is hermetically attached to the top of the cylindrical plasma generation chamber 2,
A DC bias voltage is applied to the DC bias power supply 11 by the DC bias power supply 11. A target 12 is mounted inside the cathode 10. On the other hand, in the substrate processing chamber 3 of the vacuum chamber 1, the substrate 13 is mounted on the substrate holder 14 so as to face the target 12, and the vacuum chamber 1 is evacuated from the exhaust port 1a by a vacuum exhaust system (not shown). Has been done.

In the operation of the illustrated apparatus having the above-described structure, the antenna 8 is provided on the surface of the target 12 in the magnetic neutral wire 7 formed in the plasma generating chamber 2 by the antenna 8 so as to have a highly uniform high frequency discharge plasma in a wide density range. Is generated. As a result, the target 12 is uniformly sputtered over the entire surface. Of the particles sputtered from the target 12, the particles advancing toward the side wall of the vacuum chamber 1 are captured by the cylindrical adherent 9, and the adhesion of the sputtered material to the side wall of the vacuum chamber 1 can be effectively prevented. Further, by controlling the current flowing through the upper and lower two electromagnetic coils 4 and 6 and the current flowing through the intermediate electromagnetic coil 5, respectively,
The diameter of the ring-shaped magnetic neutral wire 7 and the distance from the target 12 can be changed during the process, and as a result, highly uniform erosion can be achieved.

FIG. 2 shows a sputtering apparatus according to another embodiment of the present invention. In the apparatus according to this embodiment, portions corresponding to those of the apparatus of FIG. 1 are designated by the same reference numerals as those used in FIG. In the embodiment shown in FIG. 2, a yoke 15 forming a cylindrical ferromagnetic body is provided in close contact with the outside of the three electromagnetic coils 4, 5 and 6 forming the magnetic field generating means. It functions so that an unnecessary magnetic field is not formed in the outer spaces 5, 5 and 6. Further, in the substrate processing chamber 3 of the vacuum chamber 1, a donut-shaped ferromagnetic body 16 is provided above the substrate 13 so as to minimize the magnetic field on the substrate 13. Other configurations are substantially the same as the device shown in FIG.

In the embodiment shown in FIGS. 1 and 2, when the target 12 is conductive, a DC bias from a DC power source may be applied as shown, but when an insulating target is used, a high frequency is applied. It can be adapted to use RF bias from the power supply. A high frequency of 13.56 MHz is applied to the antenna 8 for introducing a high frequency electric field, but the frequency is not limited to this. Similarly for the high frequency applied to the cathode target 12, 13.5
It is not limited to 6MHz. Furthermore, when the antenna 8 and the cathode target 12 use the same frequency power source, it is necessary to provide a phase control circuit for adjusting the phase between the two power sources.

Next, an example of an experiment conducted using the apparatus having the configuration shown in FIGS. 1 and 2 will be described. In the apparatus shown in FIGS. 1 and 2, when the target 12 is made of quartz and a high frequency power source of 13.56 MHz is used instead of the DC bias power source 11 for target bias, the pressure of the argon gas in the vacuum chamber 1 is At 5 × 10 ^-4 Torr, RF bias power is 400W, RF power applied to antenna 8 is 800W
Under these conditions, a high erosion rate of 1200 Å / min ± 4% and high erosion uniformity were obtained. As a comparative example, even when the RF bias is used in the conventional apparatus shown in FIG. 4, it is possible to obtain the same erosion speed under some conditions, but under the static magnetic field,
%, Erosion homogeneity of less than 10% is not obtained, and even in a dynamic magnetic field, only about 10% of homogeneity is actually obtained.

FIG. 3 shows a strip-shaped deposition-inhibiting plate 17 which can be used in place of the insulating cylindrical deposition-inhibiting body 9 shown in FIGS. 1 and 2. This deposition preventive plate 17 is a support 1 at both upper and lower ends.
8 and 19 and a plurality of strip-shaped thin metal pieces 20 arranged at equal intervals in the circumferential direction between both supports, and one support 18
Is made of a conductor, and the other support 19 is made of an insulating material such as glass or ceramic, and one end of a plurality of strip-shaped sheet metal pieces 20 is electrically coupled to each other by a support 18 made of a conductor to be a Faraday. It is configured as a basket. The Faraday cage attachment plate serves to prevent the intrusion of non-uniform electrostatic field components in the circumferential direction in the high-frequency electric field generated together with the prevention of adhesion of sputtered substances from the target to the inner wall of the vacuum chamber. do. In the case of sputtering a conductive target, a strip-shaped metal plate is used to prevent the entire deposition-prevention plate from becoming a conductive tube by connecting strip-shaped metal plates with adjacent conductive substances. It is necessary to form a shielded space that does not cause film adhesion between the plates.

In the embodiment shown in FIGS. 1 and 2, the quartz cylindrical protective body 9 or the Faraday cage shown in FIG. 3 is used as the sputtering material shielding means. As a means for shielding the flying particles, for example, a dotted line 9'in FIG.
It is also possible to provide a hollow disk-shaped shield between the target 12 and the coil in the plasma space close to the coil, as shown in FIG. Further, in the embodiment shown in FIG. 1, the dotted line 16 '
As shown in FIG. 2, similarly to the case of the embodiment of FIG. 2, a donut-shaped ferromagnetic material may be provided in the upper part near the substrate 13 to reduce the magnetic field on the substrate 13 as much as possible. Further, in the embodiment shown in FIG. 1 and FIG. 2, a high frequency induction electric field for high frequency cleaning is generated in the three coils to drive out unnecessary substances including sputtered substances attached to the inner surface of the side wall of the plasma generation chamber 2 of the vacuum chamber 1. Although it has a function as a means, a means for generating a high frequency induction electric field for high frequency cleaning can be separately provided. Furthermore, in each of the illustrated embodiments, a means for heating the vacuum chamber wall may be provided to drive out unnecessary substances including sputtered substances adhering to the inner surface of the side wall of the plasma generation chamber 2 of the vacuum chamber 1.

[0021]

As described above, according to the present invention, since the magnetic neutral line discharge plasma is used, it is possible to form a uniform plasma on the target and achieve a uniform erosion which has never been achieved. Become. Further, when a conductive target is used by providing a sputtered substance shielding means for blocking sputtered substance directed toward the inner surface of the dielectric side wall of the vacuum chamber, sputtered particles adhere to the high frequency electromagnetic field introduction part and prevent the introduction of the high frequency electromagnetic field. The problem of being formed can be avoided, and stable sputter film formation can be performed.

[Brief description of drawings]

FIG. 1 is a schematic vertical sectional view showing an embodiment of the present invention.

FIG. 2 is a schematic vertical sectional view showing another embodiment of the present invention.

FIG. 3 is a schematic perspective view showing an example of a sputtering material shielding means that can be used in the sputtering apparatus of FIGS. 1 and 2.

FIG. 4 is a schematic vertical sectional view showing an example of a conventional double-pole electromagnet magnetron sputtering apparatus.

[Explanation of symbols]

 1: Vacuum chamber 2: Plasma generation chamber 3: Substrate processing chamber 4, 5, 6: Electromagnetic coil 7: Plasma ring made of circular magnetic neutral wire 8: Antenna for introducing high-frequency electric field 9: Cylinder made of quartz Adhesive shield 10: Cathode 11: DC bias power supply 12: Target 13: Substrate 14: Substrate holder 15: Yoke 16: Donut-shaped ferromagnetic substance 17: Protective plate 18, 19: Support 20: Strip-shaped thin metal piece

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toshio Hayashi 2500 Hagizono, Chigasaki City, Kanagawa Prefecture, Japan Vacuum Technology Co., Ltd.

Claims (14)

[Claims] 1. A sputtering apparatus configured to form a film on a substrate by utilizing a sputtering phenomenon using plasma in a vacuum chamber in which at least a part of a side wall is made of a dielectric material, is continuously formed in the vacuum chamber. A magnetic field generating means for forming a magnetic neutral line which is a position of the existing magnetic field zero, and an electric field is applied along the magnetic neutral line formed in the vacuum chamber by the magnetic field generating means to generate the magnetic neutrality. An electric field generating means for generating a discharge plasma on the wire, and a sputter cathode is provided at a position parallel to the surface of the magnetic neutral wire to be formed. A sputtering apparatus having a substrate electrode provided at the position. 2. The sputtering apparatus according to claim 1, wherein the electric field generating means is composed of a single or multiple high frequency coil, and is arranged inside the portion of the magnetic field generating means located near the magnetic neutral line. 3. The magnetic field generating means is composed of three magnetic field generating coils arranged coaxially, and by causing currents in opposite directions to flow in adjacent coils, each coil is provided in the vicinity of the plane of the intermediate coil. The generated magnetic fields cancel each other out to form an annular magnetic neutral line that is a connection of zero magnetic field positions, and this annular magnetic neutral line adjusts the currents that flow in the three magnetic field generating coils. The sputtering apparatus according to claim 1, wherein the diameter of the magnetic field is adjusted and the gradient of the magnetic field at the position where the magnetic field is zero is adjusted. 4. The sputtering apparatus according to claim 1, wherein the sputter cathode is arranged on or near a surface formed by the magnetic neutral wire. You can 5. The sputtering apparatus according to claim 1, wherein a DC or high frequency bias is applied to the sputtering cathode. 6. A sputtering apparatus in which a film is formed on a substrate by utilizing a sputtering phenomenon using plasma in a vacuum chamber in which at least a part of a side wall is made of a dielectric, is continuously formed in the vacuum chamber. A magnetic field generating means for forming a magnetic neutral line which is a position of the existing magnetic field zero, and an electric field is applied along the magnetic neutral line formed in the vacuum chamber by the magnetic field generating means to generate the magnetic neutrality. An electric field generating means for generating a discharge plasma in the wire, and a sputtering material shielding means provided inside the dielectric side wall of the vacuum chamber for blocking a sputtering material toward the inner surface of the dielectric side wall of the vacuum chamber. Sputtering equipment. 7. Sputtered material shielding means is provided in the vacuum chamber between the sputter cathode and the electric field generating means, and sputter particles are directed from the sputter cathode to the inner surface of the dielectric side wall of the vacuum chamber located inside the electric field generating means. 7. The sputtering apparatus according to claim 6, which is made of a hollow disk-shaped shield that blocks the above-mentioned phenomenon. 8. The sputtering apparatus according to claim 6, wherein the sputtering material shielding means comprises a thin cylindrical shield provided along the inner surface of the dielectric side wall of the vacuum chamber. 9. A sputtering apparatus in which a film is formed on a substrate by utilizing a sputtering phenomenon using plasma in a vacuum chamber in which at least a part of a side wall is made of a dielectric material, is continuously formed in the vacuum chamber. A magnetic field generating means for forming a magnetic neutral line which is a position of the existing magnetic field zero, and an electric field is applied along the magnetic neutral line formed in the vacuum chamber by the magnetic field generating means to generate the magnetic neutrality. Electric field generating means for generating a discharge plasma in the wire and the circumferential direction to prevent the electrostatic field component of the electric field generated by the electric field generating means that is not uniform in the circumferential direction from entering the vacuum chamber. A sputtering apparatus comprising: a Faraday cage in which one ends of a plurality of strip-shaped metal thin pieces installed at equal intervals are electrically coupled. 10. A sputtering apparatus configured to form a film on a substrate by utilizing a sputtering phenomenon using plasma in a vacuum chamber in which at least a part of a side wall is made of a dielectric material, is continuously formed in the vacuum chamber. A magnetic field generating means for forming a magnetic neutral line which is a position of the existing magnetic field zero, and an electric field is applied along the magnetic neutral line formed in the vacuum chamber by the magnetic field generating means to generate the magnetic neutrality. A sputtering apparatus comprising: an electric field generating means for generating a discharge plasma in a wire; and a means for driving out unnecessary substances including sputtered substances adhering to the inner surface of the dielectric side wall of the vacuum chamber. 11. The sputtering apparatus according to claim 10, wherein the means for destroying the unnecessary substance including the sputtering substance comprises a means for generating a high frequency induction electric field for high frequency cleaning. 12. The sputtering apparatus according to claim 10, wherein the means for expelling the unnecessary material containing the sputtering material comprises means for heating the vacuum chamber wall. 13. A sputtering apparatus in which a film is formed on a substrate by utilizing a sputtering phenomenon using plasma in a vacuum chamber in which at least a part of a side wall is made of a dielectric, is continuously formed in the vacuum chamber. A magnetic field generating means for forming a magnetic neutral line which is a position of the existing magnetic field zero, and an electric field is applied along the magnetic neutral line formed in the vacuum chamber by the magnetic field generating means to generate the magnetic neutrality. An electric field generating means for generating a discharge plasma in the wire; and a cylindrical ferromagnetic material provided in close contact with the outer wall of the magnetic field generating means to prevent an unnecessary magnetic field from being formed in the external space of the magnetic field generating means. Characteristic sputtering equipment. 14. A sputtering apparatus in which a film is formed on a substrate by utilizing a sputtering phenomenon using plasma in a vacuum chamber in which at least a part of a side wall is made of a dielectric material, is continuously formed in the vacuum chamber. A magnetic field generating means for forming a magnetic neutral line which is a position of the existing magnetic field zero, and an electric field is applied along the magnetic neutral line formed in the vacuum chamber by the magnetic field generating means to generate the magnetic neutrality. A sputtering apparatus comprising: an electric field generating means for generating a discharge plasma on a wire; and a donut-shaped ferromagnetic material provided in the upper part in the vicinity of the substrate and for minimizing the magnetic field on the substrate as much as possible.