JPH07254746A - Equipment for driving light emitting equipment having optical modulator - Google Patents
Equipment for driving light emitting equipment having optical modulatorInfo
- Publication number
- JPH07254746A JPH07254746A JP4454694A JP4454694A JPH07254746A JP H07254746 A JPH07254746 A JP H07254746A JP 4454694 A JP4454694 A JP 4454694A JP 4454694 A JP4454694 A JP 4454694A JP H07254746 A JPH07254746 A JP H07254746A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- electrode
- optical modulator
- emitting device
- equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光変調器付発光装置の
駆動装置に係り、詳しくは、光通信システムに適用する
ことができ、特にペルチェ素子上のＧＮＤ電位変動及び
この変動に伴う半導体レーザの発振波長の揺らぎを低減
して、安定した光ファイバの光波形を得ることができ、
長距離伝送を実現することができる光変調器付発光装置
の駆動装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a driving device for a light emitting device with an optical modulator, and more particularly, it can be applied to an optical communication system, and in particular, a GND potential fluctuation on a Peltier device and a semiconductor accompanying this fluctuation. It is possible to reduce the fluctuation of the oscillation wavelength of the laser and obtain a stable optical waveform of the optical fiber.
The present invention relates to a drive device for a light emitting device with an optical modulator that can realize long-distance transmission.
【０００２】近年、光通信システムの長距離・大容量化
に伴い、光変調器付発光装置が実用化されつつある。こ
の光変調器付発光装置は、２５℃程度の常温で動作させ
ないと安定した光特性が得られないため、ケースに設置
された温度制御可能なペルチェ素子上にセラミック絶縁
部材を介して配置して構成されている。この時、光変調
器付発光装置の発光部の電極とセラミック絶縁部材上に
形成した電極とをワイヤボンディング等によりワイヤ配
線で接続し、更にこのセラミック絶縁部材上に形成した
電極とケースＧＮＤとをワイヤボンディング等によりワ
イヤ配線で接続している。[0002] In recent years, light emitting devices with optical modulators have been put into practical use with the increase in the distance and capacity of optical communication systems. This light emitting device with a light modulator cannot obtain stable light characteristics unless it is operated at room temperature of about 25 ° C. Therefore, it is arranged on a Peltier element with temperature controllability installed in a case via a ceramic insulating member. It is configured. At this time, the electrode of the light emitting portion of the light emitting device with an optical modulator and the electrode formed on the ceramic insulating member are connected by wire wiring by wire bonding or the like, and the electrode formed on the ceramic insulating member and the case GND are connected. The wires are connected by wire bonding or the like.
【０００３】しかしながら、この光変調器付発光装置の
駆動装置では、光変調器に変調をかけた場合、ペルチェ
素子上のＧＮＤとケースＧＮＤを接続するワイヤ配線に
より変調電流が生じ、この変調電流によりペルチェ素子
上のＧＮＤ電位が変動して、発光部に流れる電流が変動
してしまう。このように、発光部に流れる電流が変動す
ると、実効的な共振周波数が変動して、発振波長の揺ら
ぎを引き起こしてしまう。このため、長距離伝送に用い
られる光ファイバの光波形がずれてしまう等、長距離伝
送を行い難くなってしまうという問題があった。However, in the driving device of the light emitting device with an optical modulator, when the optical modulator is modulated, a modulation current is generated by the wire wiring connecting the GND on the Peltier element and the case GND, and this modulation current The GND potential on the Peltier device fluctuates, and the current flowing through the light emitting unit fluctuates. In this way, when the current flowing through the light emitting portion changes, the effective resonance frequency changes, causing fluctuations in the oscillation wavelength. For this reason, there has been a problem that it becomes difficult to perform long-distance transmission, for example, the optical waveform of the optical fiber used for long-distance transmission is deviated.
【０００４】そこで、ペルチェ素子上のＧＮＤ電位変動
及びこの変動に伴う発振波長の揺らぎを低減して、安定
した光ファイバの光波形を得ることができ、長距離伝送
を実現することができる光変調器付発光装置の駆動装置
が要求されている。Therefore, the optical modulation capable of reducing the fluctuation of the GND potential on the Peltier device and the fluctuation of the oscillation wavelength due to this fluctuation to obtain a stable optical waveform of the optical fiber and realizing long-distance transmission. A drive device for a light emitting device with a device is required.
【０００５】[0005]
【従来の技術】図４は従来の光変調器付発光装置の駆動
装置の構成を示す断面概略図である。従来は、接地部材
となるケース１０１上に温度制御可能なペルチェ素子１
０２を設置し、このペルチェ素子１０２上にセラミック
等の絶縁部材１０３を配置し、このセラミック絶縁部材
１０３上に光変調器付発光装置１０４を配置している。
この光変調器付発光装置１０４では、半導体レーザ部１
０４ａに直流電流が印加され、半導体レーザ部１０４ａ
で生成したレーザ光を光変調器部１０４ｂに導入し光変
調を行って、矢印の如くレーザ光を出力している。ま
た、光変調器付発光装置１０４の下部電極１１４とケー
スＧＮＤ１１３とをワイヤボンディング等によりワイヤ
配線１１２で接続している。2. Description of the Related Art FIG. 4 is a schematic sectional view showing the structure of a conventional driving device for a light emitting device with an optical modulator. Conventionally, a temperature controllable Peltier element 1 is provided on a case 101 which serves as a ground member.
02, the insulating member 103 made of ceramic or the like is arranged on the Peltier element 102, and the light emitting device 104 with an optical modulator is arranged on the ceramic insulating member 103.
In the light emitting device with an optical modulator 104, the semiconductor laser unit 1
Direct current is applied to the semiconductor laser unit 104a.
The laser light generated in step 1 is introduced into the optical modulator section 104b to perform optical modulation, and the laser light is output as indicated by the arrow. Further, the lower electrode 114 of the light emitting device with a light modulator 104 and the case GND 113 are connected by a wire wiring 112 by wire bonding or the like.
【０００６】この従来の光変調器付発光装置の駆動装置
は、温度制御可能なペルチェ素子１０２上に絶縁部材１
０３を介して設置して外部と熱的に遮断したうえで温度
制御されている。In this conventional driving device for a light emitting device with an optical modulator, an insulating member 1 is provided on a Peltier element 102 whose temperature is controllable.
It is installed via 03 and is thermally controlled from the outside and then temperature controlled.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上記し
た従来の光変調器付発光装置の駆動装置では、光変調器
部１０４ｂに変調をかけた場合、ペルチェ素子１０２上
のＧＮＤとケースＧＮＤ１１３を接続するワイヤ１１２
等によりペルチェ素子１０２上のＧＮＤ電位が変動し
て、半導体レーザ部１０４ａに流れるレーザ電流が変動
してしまう。このように、半導体レーザ部１０４ａに流
れるレーザ電流が変動すると、レーザの屈折率が変動し
実効的な共振周波数が変動して、半導体レーザ部１０４
ａの発振波長の揺らぎを引き起こしてしまう。このた
め、長距離伝送に用いられる光ファイバの光波形がずれ
てしまう等、長距離伝送を行い難くなってしまうという
問題があった。However, in the above-described conventional driving device for the light emitting device with the optical modulator, when the optical modulator section 104b is modulated, the GND on the Peltier element 102 and the case GND113 are connected. Wire 112
As a result, the GND potential on the Peltier element 102 changes, and the laser current flowing through the semiconductor laser unit 104a also changes. In this way, when the laser current flowing through the semiconductor laser unit 104a changes, the refractive index of the laser changes and the effective resonance frequency also changes, causing the semiconductor laser unit 104 to change.
This causes fluctuations in the oscillation wavelength of a. For this reason, there has been a problem that it becomes difficult to perform long-distance transmission, for example, the optical waveform of the optical fiber used for long-distance transmission is deviated.
【０００８】そこで、ペルチェ素子上のＧＮＤ電位変動
及びこの変動に伴う半導体レーザの発振波長の揺らぎを
低減して、安定した光ファイバの光波形を得ることがで
き、長距離伝送を実現することができる光変調器付発光
装置を提供することを目的とする。Therefore, fluctuations in the GND potential on the Peltier element and fluctuations in the oscillation wavelength of the semiconductor laser due to this fluctuation can be reduced to obtain a stable optical waveform of the optical fiber, and long-distance transmission can be realized. An object of the present invention is to provide a light emitting device with a light modulator that can be used.
【０００９】[0009]
【課題を解決するための手段】請求項１記載の発明は、
温度制御素子上に絶縁部材が配置され、該絶縁部材上に
光変調器付発光装置が配置され、該光変調器付発光装置
の発光部上に形成した第１の電極と該絶縁部材上に形成
した第２の電極とが第１のワイヤ配線により接続され、
該絶縁部材上の該第２の電極と直流バイアス端子とが第
２のワイヤ配線により接続され、該光変調器付発光装置
の下部電極と該接地部材とが第３のワイヤ配線により接
続されてなる光変調器付発光装置の駆動装置において、
該光変調器付発光装置の光変調器部上に形成した第３の
電極と直列に接続された抵抗素子を設けてなることを特
徴とするものである。The invention according to claim 1 is
An insulating member is arranged on the temperature control element, a light emitting device with a light modulator is arranged on the insulating member, and a first electrode formed on a light emitting portion of the light emitting device with a light modulator and the insulating member are arranged on the insulating member. The formed second electrode is connected by the first wire wiring,
The second electrode on the insulating member and the DC bias terminal are connected by a second wire wiring, and the lower electrode of the light emitting device with an optical modulator and the ground member are connected by a third wire wiring. In the driving device of the light emitting device with a light modulator,
It is characterized in that a resistance element connected in series with a third electrode formed on the light modulator portion of the light emitting device with a light modulator is provided.
【００１０】請求項２記載の発明は、上記請求項１記載
の発明において、前記抵抗素子は、前記光変調器部の前
記第３の電極とワイヤ配せにより接続され、かつ前記絶
縁部材上に形成された電極内に形成されてなることを特
徴とするものである。According to a second aspect of the present invention, in the above-mentioned first aspect of the invention, the resistance element is connected to the third electrode of the optical modulator section by a wire arrangement, and on the insulating member. It is characterized in that it is formed in the formed electrode.
【００１１】[0011]
【作用】本発明では、後述する実施例の図１〜３に示す
如く、光変調器部４ｂの電極１３から引き出したワイヤ
配線１５に繋がれた電極内に抵抗素子１６を形成し、こ
の抵抗素子１５を光変調器部４ｂに直列に挿入して構成
したため、後述する（１）式から判るように、従来の抵
抗Ｒとなる抵抗素子１６を設けていない場合よりも、ペ
ルチェ素子２上のＧＮＤ変動電位ΔＶを低減することが
できる。このため、半導体レーザ部４ａの発振波長の揺
らぎを低減することができるので、安定した光ファイバ
の光波形を得ることができ、長距離伝送を実現すること
ができる。In the present invention, as shown in FIGS. 1 to 3 of the embodiment described later, the resistance element 16 is formed in the electrode connected to the wire wiring 15 drawn from the electrode 13 of the optical modulator portion 4b, and the resistance element 16 is formed. Since the element 15 is formed by inserting the element 15 in series with the optical modulator portion 4b, as can be seen from the expression (1) described later, the element 15 on the Peltier element 2 is provided as compared with the case where the conventional resistance element 16 which becomes the resistance R is not provided. The GND fluctuation potential ΔV can be reduced. Therefore, fluctuations in the oscillation wavelength of the semiconductor laser section 4a can be reduced, so that a stable optical waveform of the optical fiber can be obtained and long-distance transmission can be realized.
【００１２】[0012]
【実施例】以下、本発明の実施例を図面を参照して説明
する。図１は本発明に係る一実施例の光変調器付発光装
置の駆動装置の構成を示す平面図、図２は図１に示すケ
ース、ペルチェ素子、絶縁部材及び光変調器付発光装置
部分の構造を示す断面図である。本実施例の光変調器付
発光装置の駆動装置は、図１，２に示す如く、ＫＯＶＲ
等のケース１内に温度制御可能なペルチェ素子２が設置
され、このペルチェ素子２上にセラミック等の絶縁部材
３が配置され、この絶縁部材３上に半導体レーザ部４ａ
と光変調器部４ｂとからなる光変調器付発光装置４が配
置されている。次いで、光変調器付発光装置４の半導体
レーザ部４ａ上に形成したＡｕ等の電極５と絶縁部材３
上に形成したＡｕ等の電極６とがワイヤボンディング法
等によりＡｕ等のワイヤ配線７で接続され、更にこの絶
縁部材３上に形成したＡｕ等の電極６とケース１に形成
した直流バイアス端子８とがワイヤボンディング法等に
よりＡｕ等のワイヤ配線９で接続されている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a plan view showing the configuration of a driving device for a light emitting device with an optical modulator according to an embodiment of the present invention, and FIG. 2 is a case, a Peltier element, an insulating member and a light emitting device with an optical modulator part shown in FIG. It is sectional drawing which shows a structure. As shown in FIGS. 1 and 2, the driving device of the light emitting device with the optical modulator of the present embodiment is KOVR.
A temperature controllable Peltier element 2 is installed in a case 1, and an insulating member 3 made of ceramic or the like is arranged on the Peltier element 2 and a semiconductor laser portion 4a is provided on the insulating member 3.
And a light modulator-equipped light emitting device 4 including the light modulator unit 4b. Next, the electrode 5 made of Au or the like and the insulating member 3 formed on the semiconductor laser portion 4a of the light emitting device with optical modulator 4 are formed.
The electrode 6 made of Au or the like formed above is connected by a wire wiring 7 made of Au or the like by a wire bonding method or the like, and the electrode 6 made of Au or the like formed on the insulating member 3 and the DC bias terminal 8 formed on the case 1. And are connected by a wire wiring 9 of Au or the like by a wire bonding method or the like.
【００１３】次いで、絶縁部材３上の端部まで延びた光
変調器付発光装置４のＡｕ等の下部電極１０とケース１
底部に形成したケースＧＮＤ部１１とがワイヤボンディ
ング法等によりＡｕ等のワイヤ配線１２で接続され、光
変調器付発光装置４の光変調器部４ｂ上に形成したＡｕ
等の電極１３と絶縁部材３上に形成したＡｕ等の電極１
４とがワイヤボンディング法等によりＡｕ等のワイヤ配
線１５で接続されている。また、この絶縁部材３上に形
成した電極１４内には、ＴａＮ等の１０Ω程度の抵抗素
子１６が形成されている。そして、更にこの絶縁部材３
上に形成した電極１４とケース１に形成した変調信号入
力端子１７とがワイヤボンディング法等によりＡｕ等の
ワイヤ配線１８で接続され、この変調信号入力端子１７
とケースＧＮＤ部１１間に５０Ω程度のＴａＮ等のマッ
チング用抵抗素子１９が形成されている。Next, the lower electrode 10 of Au or the like of the light emitting device with a light modulator 4 extending to the end on the insulating member 3 and the case 1 are formed.
An Au formed on the light modulator portion 4b of the light emitting device with a light modulator 4 is connected to the case GND portion 11 formed at the bottom by a wire wiring 12 such as Au by a wire bonding method or the like.
Electrode 13 such as Au and the electrode 1 such as Au formed on the insulating member 3
4 are connected by a wire wiring 15 made of Au or the like by a wire bonding method or the like. Further, in the electrode 14 formed on the insulating member 3, a resistance element 16 of about 10Ω such as TaN is formed. And further, this insulating member 3
The electrode 14 formed above and the modulation signal input terminal 17 formed on the case 1 are connected by a wire wiring 18 such as Au by a wire bonding method or the like.
A matching resistance element 19 such as TaN of about 50Ω is formed between the case GND portion 11 and the case GND portion 11.
【００１４】次に、図３は図１，２に示す光変調器付発
光装置の駆動装置の回路図である。本実施例におけるペ
ルチェ素子２上のＧＮＤ変動電位ΔＶは、図３の回路図
から判るように、次の（１）式の如く、Next, FIG. 3 is a circuit diagram of a driving device of the light emitting device with an optical modulator shown in FIGS. As can be seen from the circuit diagram of FIG. 3, the GND fluctuation potential ΔV on the Peltier device 2 in the present embodiment is expressed by the following equation (1).
【００１５】[0015]
【数１】 [Equation 1]
【００１６】なる。ここで、ＺGND は、光変調器付発光
装置４の電極１０とケースＧＮＤ部１１間に生じるイン
ダクタンス成分であり、ＺC は、主として光変調器付発
光装置４を構成するＰＮ接合部に生じるキャパシタンス
成分であり、Ｒは電極１３に形成した抵抗素子１８の抵
抗値であり、ΔＶMOD は、光変調器部４ｂとケースＧＮ
Ｄ間の変動電位である。It becomes Here, Z GND is an inductance component generated between the electrode 10 of the light emitting device with a light modulator 4 and the case GND portion 11, and Z C is mainly generated in a PN junction portion forming the light emitting device with a light modulator 4. A capacitance component, R is a resistance value of the resistance element 18 formed on the electrode 13, and ΔV MOD is the optical modulator unit 4b and the case GN.
It is a variable potential between D.
【００１７】このように、本実施例では、光変調器部４
ｂの電極１２から引き出したワイヤ配線１４に繋がれた
電極１３内に抵抗素子１５を形成し、この抵抗素子１５
を光変調器部４ｂに直列に挿入して構成したため、
（１）式から判るように、従来の抵抗Ｒとなる抵抗素子
１５を設けてない場合よりも、ペルチェ素子２上のＧＮ
Ｄ変動電位ΔＶを低減することができる。このため、半
導体レーザ部４ａの発振波長の揺らぎを低減することが
できるので、安定した光ファイバの光波形を得ることが
でき、長距離伝送を実現することができる。なお、本実
施例では、Ｒ＝１０Ω程度を選べば、Ｌｉｇｈｔ−ＯＦ
Ｆ時の光吸収電流を２０ｍＡ程度で光変調器部４ｂへの
印加電圧ロスが０．２Ｖ程度にすることができるので、
消光比劣化には殆ど影響ないようにすることができる。As described above, in this embodiment, the optical modulator section 4 is used.
The resistance element 15 is formed in the electrode 13 connected to the wire wiring 14 drawn from the electrode 12 of FIG.
Since the optical modulator unit 4b is inserted in series,
As can be seen from the equation (1), the GN on the Peltier element 2 is larger than that in the case where the conventional resistance element 15 serving as the resistance R is not provided.
The D fluctuation potential ΔV can be reduced. Therefore, fluctuations in the oscillation wavelength of the semiconductor laser section 4a can be reduced, so that a stable optical waveform of the optical fiber can be obtained and long-distance transmission can be realized. In this embodiment, if R = 10Ω is selected, the Light-OF
When the light absorption current at F is about 20 mA, the applied voltage loss to the optical modulator unit 4b can be about 0.2 V,
It is possible to make the extinction ratio deterioration almost unaffected.
【００１８】[0018]
【発明の効果】本発明によれば、ペルチェ素子上のＧＮ
Ｄ電位変動及びこの変動に伴う半導体レーザの発振波長
の揺らぎを低減して、安定した光ファイバの光波形を得
ることができ、長距離伝送を実現することができるとい
う効果がある。According to the present invention, the GN on the Peltier device is
It is possible to reduce fluctuations in the D potential and fluctuations in the oscillation wavelength of the semiconductor laser due to this fluctuation, to obtain a stable optical waveform of the optical fiber, and to realize long-distance transmission.
【図１】本発明に係る一実施例の光変調器付発光装置の
駆動装置の構成を示す平面図である。FIG. 1 is a plan view showing the configuration of a driving device of a light emitting device with a light modulator according to an embodiment of the present invention.
【図２】図１に示すケース、ペルチェ素子、絶縁部材及
び光変調器付発光装置部分の構造を示す断面図である。FIG. 2 is a cross-sectional view showing a structure of a case, a Peltier element, an insulating member, and a light emitting device with an optical modulator shown in FIG.
【図３】図１，２に示す光変調器付発光装置の回路図で
ある。FIG. 3 is a circuit diagram of the light emitting device with an optical modulator shown in FIGS.
【図４】従来のケース上に設置したペルチェ素子上にセ
ラミック板を介して形成した光変調器付発光装置の構造
を示す断面概略図である。FIG. 4 is a schematic cross-sectional view showing the structure of a light emitting device with an optical modulator formed on a Peltier device installed on a conventional case via a ceramic plate.
１ ケース ２ ペルチェ素子 ３ 絶縁部材 ４ 光変調器付発光装置 ４ａ 半導体レーザ部 ４ｂ 光変調器部 ５，６，１０，１３，１４ 電極 ７，９，１２，１５，１８ ワイヤ配線 ８ 直流バイアス端子 １１ ケースＧＮＤ部 １６，１９ 抵抗素子 １７ 変調信号入力端子 1 Case 2 Peltier Element 3 Insulating Member 4 Light Emitting Device with Optical Modulator 4a Semiconductor Laser Section 4b Optical Modulator Section 5, 6, 10, 13, 14 Electrode 7, 9, 12, 15, 18 Wire Wiring 8 DC Bias Terminal 11 Case GND part 16,19 Resistance element 17 Modulation signal input terminal
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｓ 3/133 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical indication H01S 3/133
Claims (2)
配置され、該絶縁部材（３）上に光変調器付発光装置
（４）が配置され、該光変調器付発光装置（４）の発光
部（４ａ）上に形成した第１の電極（５）と該絶縁部材
（３）上に形成した第２の電極（６）とが第１のワイヤ
配線（７）により接続され、該絶縁部材（３）上の該第
２の電極（６）と直流バイアス端子（８）とが第２のワ
イヤ配線（９）により接続され、該光変調器付発光装置
（４）の下部電極（１０）と該接地部材（１１）とが第
３のワイヤ配線（１２）により接続されてなる光変調器
付発光装置の駆動装置において、該光変調器付発光装置
（４）の光変調器部（４ｂ）上に形成した第３の電極
（１３）と直列に接続された抵抗素子（１６）を設けて
なることを特徴とする光変調器付発光装置。1. An insulating member (3) is arranged on a temperature control element (2), and a light emitting device (4) with a light modulator is arranged on the insulating member (3). The first electrode (5) formed on the light emitting part (4a) of (4) and the second electrode (6) formed on the insulating member (3) are connected by the first wire wiring (7). Then, the second electrode (6) on the insulating member (3) and the DC bias terminal (8) are connected by the second wire wiring (9), and the light emitting device (4) with an optical modulator is connected. In a driving device of a light emitting device with an optical modulator, the lower electrode (10) and the grounding member (11) are connected by a third wire wiring (12). A resistance element (16) connected in series with the third electrode (13) formed on the modulator section (4b) is provided. Modulator with the light emitting device.
（４ｂ）の前記第３の電極（１３）とワイヤ配線（１
５）により接続され、かつ前記絶縁部材（３）上に形成
された電極（１４）内に形成されてなることを特徴とす
る請求項１記載の光変調器付発光装置の駆動装置。2. The resistance element (16) is a wire wiring (1) with the third electrode (13) of the optical modulator section (4b).
5. The driving device for a light emitting device with a light modulator according to claim 1, wherein the driving device is provided in the electrode (14) which is connected by 5) and is formed on the insulating member (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4454694A JPH07254746A (en) | 1994-03-16 | 1994-03-16 | Equipment for driving light emitting equipment having optical modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4454694A JPH07254746A (en) | 1994-03-16 | 1994-03-16 | Equipment for driving light emitting equipment having optical modulator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07254746A true JPH07254746A (en) | 1995-10-03 |
Family
ID=12694506
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4454694A Withdrawn JPH07254746A (en) | 1994-03-16 | 1994-03-16 | Equipment for driving light emitting equipment having optical modulator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07254746A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0816884A1 (en) * | 1996-06-28 | 1998-01-07 | NEC Corporation | Temperature controlled optical coupling structure |
| CN102798943A (en) * | 2011-05-24 | 2012-11-28 | 住友电气工业株式会社 | Optical transceiver implemented with tunable LD |
| US8509575B2 (en) | 2009-06-02 | 2013-08-13 | Mitsubishi Electric Corporation | Semiconductor optical modulation device |
-
1994
- 1994-03-16 JP JP4454694A patent/JPH07254746A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0816884A1 (en) * | 1996-06-28 | 1998-01-07 | NEC Corporation | Temperature controlled optical coupling structure |
| US5848210A (en) * | 1996-06-28 | 1998-12-08 | Nec Corporation | Temperature controlled optical coupling structure |
| US8509575B2 (en) | 2009-06-02 | 2013-08-13 | Mitsubishi Electric Corporation | Semiconductor optical modulation device |
| KR101349582B1 (en) * | 2009-06-02 | 2014-01-09 | 미쓰비시덴키 가부시키가이샤 | Semiconductor light modulating device |
| CN102798943A (en) * | 2011-05-24 | 2012-11-28 | 住友电气工业株式会社 | Optical transceiver implemented with tunable LD |
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