JPH07245273A - Substrate treatment device - Google Patents

Substrate treatment device

Info

Publication number
JPH07245273A
JPH07245273A JP3275894A JP3275894A JPH07245273A JP H07245273 A JPH07245273 A JP H07245273A JP 3275894 A JP3275894 A JP 3275894A JP 3275894 A JP3275894 A JP 3275894A JP H07245273 A JPH07245273 A JP H07245273A
Authority
JP
Japan
Prior art keywords
boat
substrate
reaction tube
section
air conditioning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3275894A
Other languages
Japanese (ja)
Inventor
Takao Sakai
隆夫 坂井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP3275894A priority Critical patent/JPH07245273A/en
Publication of JPH07245273A publication Critical patent/JPH07245273A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make uniform all the heat treatment results of substrates to be treated being mounted on a boat by providing an air-controlling part for forming a cylindrical contour with a peripheral surface section which is in the same shape and has the same size as the peripheral surface section of the cylindrical contour formed by the substrates to be treated and a boat at the reaction pipe feed gas introduction port side of a boat stage. CONSTITUTION:An air-controlling part is made of SiO2 and is formed in one piece with a port stage, four posts for forming plate materials 3 and 4 in opposing state are laid out along the peripheral edge of the plate materials, and a plurality of cuts 5a are formed each. An air-controlling plate in a same diameter is inserted into the cuts 5a over the practically entire range of the plate materials 3 and 4 consisting of for example SiC ceramic materials and the peripheral edge. The outer diameter of the plate materials 3 and 4 is set equally to that of a multiple-stage ring constituting a boat and the peripheral surface section of the cylindrical contour formed by the air-controlling part and the cylindrical contour peripheral surface section at the port side are equal in shape and dimensions, thus preventing swirls from being present near the substrate surface and obtaining a film with a uniform film thickness on the substrate surface.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、半導体基板の表面に
薄膜形成等の処理を行う基板処理装置のうち、内部空間
が反応室となる筒状の反応管と、反応管内で複数の被処
理基板を反応管の軸方向積層状態に塔載するボートと、
ボートを支持し反応管内の軸方向所定位置にボートを位
置決めするボートステージとを備え、反応管内に位置す
る被処理基板を所定温度に加熱しつつボートステージの
反ボート側に位置する反応管の原料ガス導入口から反応
管内へ原料ガスを反応管内で低圧力となるように導入し
て被処理基板表面に薄膜を形成し、あるいは基板表面の
酸化,基板表面から基板内部への不純物あるいはイオン
の拡散等の熱処理を行う基板処理装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus for performing processing such as thin film formation on the surface of a semiconductor substrate, and a cylindrical reaction tube having an internal space serving as a reaction chamber and a plurality of objects to be processed in the reaction tube. A boat for mounting the substrates in a stacked state of the reaction tubes in the axial direction,
A boat stage that supports the boat and positions the boat at a predetermined axial position in the reaction tube, and heats a substrate to be processed located in the reaction tube to a predetermined temperature, and a raw material for a reaction tube located on the side opposite to the boat stage of the boat stage. The raw material gas is introduced into the reaction tube from the gas inlet at a low pressure to form a thin film on the surface of the substrate to be processed, or the surface of the substrate is oxidized, and impurities or ions are diffused from the surface of the substrate into the inside of the substrate. The present invention relates to a substrate processing apparatus for performing heat treatment such as.

【0002】[0002]

【従来の技術】この種基板処理装置は減圧CVD装置あ
るいは酸化拡散装置として知られ、例えば図3のごとく
構成される。図は筒状反応管の軸線方向を鉛直方向とし
た縦型のものを示しているが、軸線方向を水平方向とし
た横型のものでも基本構成は同じであるので、ここで
は、縦型のものを主体に説明する。
2. Description of the Related Art This type of substrate processing apparatus is known as a low pressure CVD apparatus or an oxidation diffusion apparatus, and is constructed, for example, as shown in FIG. The figure shows a vertical type in which the axial direction of the cylindrical reaction tube is the vertical direction, but the basic configuration is the same for horizontal type with the axial direction in the horizontal direction, so here the vertical type is used. Will be explained mainly.

【0003】図3の装置は、通常SiO2 で作られる筒
状の反応管10と、反応管10を囲むヒータ11と、複
数の被処理基板12を軸方向積層状態に塔載するボート
12と上下方向に移動してボート12の反応管10内軸
方向位置の位置決めをするボートステージ14と、ヒー
タ11から反応管10内へ供給された輻射熱を外部へ逃
がさないようにする遮熱機構15と、原料ガスを反応管
10内へ導入するための原料ガス導入管16と、図示さ
れない真空排気系に接続された排気管17と、未処理基
板12を反応管10内へ挿入しあるいは処理済み基板1
2を反応管10外へ取り出すためにボートステージ14
を上下移動させる上下移動機構18とを主要構成要素と
して構成されている。
The apparatus shown in FIG. 3 includes a tubular reaction tube 10 usually made of SiO 2 , a heater 11 surrounding the reaction tube 10, and a boat 12 for mounting a plurality of substrates 12 to be processed in an axially stacked state. A boat stage 14 that moves up and down to position an axial position of the boat 12 inside the reaction tube 10, and a heat shield mechanism 15 that does not let radiant heat supplied from the heater 11 into the reaction tube 10 escape to the outside. A raw material gas introduction pipe 16 for introducing a raw material gas into the reaction tube 10, an exhaust pipe 17 connected to a vacuum exhaust system (not shown), and an untreated substrate 12 inserted into the reaction pipe 10 or a treated substrate 1
2 to take out the reaction tube 10 from the boat stage 14
And a vertical movement mechanism 18 for vertically moving the.

【0004】基板12への薄膜形成等の熱処理時には、
ボート13に軸方向積層状態に塔載された複数の基板1
2が反応管10内へ挿入され、ヒータ11により所定の
温度に加熱されたところで原料ガス導入管16から原料
ガスが排気系運転の下で1Torr前後以下の圧力とな
るように送り込まれる。このように反応管10内の原料
ガス圧力を低くすると、原料ガス分子の拡散が大きく、
反応管10内を軸方向に流れる原料ガスの基板中央部へ
のまわり込みが自由に行われ、薄膜形成,酸化,拡散い
ずれの処理においても処理結果の面内均一性が高くな
る。
During heat treatment such as thin film formation on the substrate 12,
A plurality of substrates 1 mounted on the boat 13 in an axially stacked state
When 2 is inserted into the reaction tube 10 and heated to a predetermined temperature by the heater 11, the raw material gas is fed from the raw material gas introduction pipe 16 so as to have a pressure of about 1 Torr or less under the operation of the exhaust system. When the pressure of the raw material gas in the reaction tube 10 is lowered in this way, the diffusion of the raw material gas molecules is large,
The raw material gas flowing in the reaction tube 10 in the axial direction can freely flow into the central portion of the substrate, and the in-plane uniformity of the processing result can be improved in any of the thin film formation, oxidation, and diffusion processes.

【0005】[0005]

【発明が解決しようとする課題】このように構成されか
つ運転される基板処理装置では、基板処理結果の軸方向
均一性も得られるよう、処理時に、基板はすべて反応管
内の均熱領域内に位置させられる。反応管内の均熱領域
の軸方向長さは、反応管の使用方法により異なり、例え
ば、薄膜形成のための低温領域と,薄膜形成後のアニー
ル処理のための高温領域とを反応管内に設定して薄膜形
成からアニール処理までを連続して行い、装置の生産性
を上げようとするものでは、各領域の長さが短くなり、
通常、ボートは、高低両温度領域を設定する反応管を対
象として軸方向長さの短い均熱領域に合わせたものが製
作されている。一方、反応管内の熱を外部へ逃がさない
ようにするために例えばSiO2 ケース内にSiO2
ールを充填して形成される遮熱機構は、反応管内の温度
勾配を小さくして所期の均熱領域長さを余裕をもって確
保するため、反応管のできるだけ下方に位置させてお
り、このために遮熱機構と均熱領域にあるボートの底面
を支えるボートステージとの間には空隙が存在し、この
空隙部で原料ガスの流れが乱れ、この乱れの影響が基板
10数枚分にわたり,この10数枚の基板における膜厚
分布は±5%を超えて±10%以上の範囲に分布するた
め、これらの基板は良品を得るためのダミー基板とな
り、1バッチで良品として得られるべき基板枚数の減り
方が大きく、装置のスループットが低下するという問題
があった。
In the substrate processing apparatus constructed and operated as described above, all the substrates are placed in the uniform temperature region in the reaction tube during the processing so that the axial uniformity of the substrate processing result can be obtained. Located. The axial length of the soaking region in the reaction tube varies depending on the method of using the reaction tube. For example, a low temperature region for thin film formation and a high temperature region for annealing treatment after thin film formation are set in the reaction pipe. In order to increase the productivity of the device by continuously performing thin film formation to annealing treatment, the length of each region becomes shorter,
Usually, the boat is manufactured so that the reaction tube for setting both the high temperature region and the low temperature region is targeted for a soaking region having a short axial length. On the other hand, in order to prevent the heat in the reaction tube from escaping to the outside, a heat shield mechanism formed by, for example, filling the SiO 2 case with SiO 2 wool reduces the temperature gradient in the reaction tube to achieve the desired level. In order to secure a sufficient length of the heat zone, it is located as low as possible in the reaction tube.Therefore, there is a gap between the heat shield mechanism and the boat stage that supports the bottom of the boat in the soaking zone. The flow of the raw material gas is disturbed in this void portion, and the influence of this disturbance is exerted over ten or more substrates, and the film thickness distribution on these ten or more substrates exceeds ± 5% and is distributed in the range of ± 10% or more. Therefore, these substrates become dummy substrates for obtaining non-defective products, and the number of substrates that should be obtained as non-defective products in one batch is largely reduced, and there is a problem that the throughput of the apparatus is reduced.

【0006】本発明の目的は、冒頭記載の基本構成によ
る熱処理装置を、ボート,反応管,ヒータに構造面,寸
法面あるいは使用方法面で何ら変更を加えることなく、
ボートに塔載された被処理基板の熱処理結果が全数面内
均一となり、全数良品として得られる処理を行うことの
できる装置に構成することである。
An object of the present invention is to provide a heat treatment apparatus having the basic structure described at the beginning without changing the boat, the reaction tube, and the heater in terms of structure, dimensions, or usage.
The heat treatment results of the substrates to be processed mounted on the boat are made uniform in the entire surface, and the apparatus is configured to be capable of performing the processing that is obtained as a non-defective product.

【0007】[0007]

【課題を解決するための手段】上記課題を解決するため
に、本発明においては、冒頭記載の基本構成をもつ基板
処理装置、すなわち、内部空間が反応室となる筒状の反
応管と、反応管内で複数の被処理基板を反応管の軸方向
積層状態に塔載するボートと、ボートを支持し反応管内
の軸方向所定位置にボートを位置決めするボートステー
ジとを備え、反応管内に位置する被処理基板を所定温度
に加熱しつつボートステージの反ボート側に位置する反
応管の原料ガス導入口から反応管内へ原料ガスを反応管
内で低圧力となるように導入して被処理基板表面に薄膜
を形成し、あるいは基板表面の酸化,基板表面から基板
内部への不純物あるいはイオンの拡散等の熱処理を行う
基板処理装置を、請求項第1項に記載のごとく、ボート
ステージの反応管原料ガス導入口側に、ボートのみある
いは被処理基板がボートに塔載された状態で被処理基板
とボートとで形成する筒状輪郭の周面断面と同形,等大
の周面断面をもつ筒状の輪郭を形成する整風部を備えた
装置とする。
In order to solve the above-mentioned problems, in the present invention, a substrate processing apparatus having the basic structure described at the beginning, that is, a cylindrical reaction tube having an internal space as a reaction chamber, and a reaction A boat that mounts a plurality of substrates to be processed in a tube in a stacked state in the axial direction of the reaction tube, and a boat stage that supports the boat and positions the boat at a predetermined axial position in the reaction tube are provided. While heating the processing substrate to a predetermined temperature, the raw material gas is introduced into the reaction tube from the raw material gas introduction port of the reaction tube located on the opposite side of the boat stage to a low pressure in the reaction tube to form a thin film on the surface of the substrate to be processed. A substrate processing apparatus for forming a substrate or performing a heat treatment such as oxidation of a substrate surface or diffusion of impurities or ions from the substrate surface to the inside of the substrate, the reaction tube of a boat stage according to claim 1. A cylinder having a peripheral cross section of the same shape as the peripheral cross section of the tubular contour formed by the substrate to be processed and the boat in the state where only the boat or the substrate to be processed is mounted on the boat at the raw gas introduction port side. The apparatus is provided with an air conditioning section that forms a contour of a shape.

【0008】そして、この整風部を、請求項第2項に記
載のごとく、ボート側の筒状輪郭の周面断面と同形,等
大の周縁をもつ複数の板材を、各板材の面積内に位置す
る支柱を介して互いに対向状態に一体化した構造とすれ
ば好適である。そして、この構造では、複数の板材を互
いに対向状態に一体化する支柱は、請求項第3項に記載
のごとく、各板材間に板材周縁に沿ってそれぞれ複数設
け、整風板を支持可能な突起もしくは切込みを設けたも
のとしてもよい。
As described in claim 2, a plurality of plate members each having the same shape as the peripheral surface cross section of the tubular contour on the boat side and a peripheral edge of equal size are provided within the area of each plate member. It is preferable to have a structure in which they are integrated so as to be opposed to each other through the positioned columns. Further, in this structure, the pillars that integrate a plurality of plate members in a mutually opposing state are provided in a plurality along the peripheral edge of the plate member between the plate members as described in claim 3, and a protrusion capable of supporting the air conditioning plate. Alternatively, a notch may be provided.

【0009】また、請求項第1項に記載の整風部は、請
求項第4項に記載のごとく、その筒状輪郭周面を周壁の
外周面とする筒状体とすればさらに好適である。
Further, the air conditioning section according to claim 1 is further suitable as a cylindrical body having a cylindrical contour peripheral surface as an outer peripheral surface of a peripheral wall as described in claim 4. .

【0010】[0010]

【作用】このようにして、ボートステージの反応管原料
ガス導入口側に、ボートのみあるいは被処理基板がボー
トに塔載された状態で被処理基板とボートとで形成する
筒状輪郭の周面断面と同形,等大の周面断面をもつ筒状
の輪郭を形成する整風部を備えたものとすれば、整風部
が、ボート側の筒状輪郭と同形,等大の周面断面をもつ
みずからの筒状輪郭と反応管の平滑な内壁面との間に筒
状の空間を形成し、遮熱機構のボート側端部等、ボート
の上流側で流れを乱された原料ガスがこの筒状空間を走
る間に乱れの原因となっている渦が消えて行き、整風部
の筒状輪郭周面が平滑な実質面でないときは、輪郭周面
側の薄い層を残して残りの流路断面が層流化し、ボート
位置に到達する。ボートは、縦型装置では、通常、複数
のリングを軸方向に間隔をおきつつ短支柱で接続した、
全体として筒状の構造をもち、リングの外径より小さい
径の基板がリング上に塔載される。従ってボートは軸方
向に円滑な筒体ではないので、流れの全断面中ボート側
の薄い層は層流とならないが、この薄い層を含むボート
まわりの流れが基板中央部へ膨張する形となり、流れを
乱す渦としては、ボートの各リング周縁の角に周縁全長
にわたって微小な渦を発生するのみで、この渦は基板に
は到達しない。基板中央部へ膨張もしくは拡散した原料
ガスは、基板が高温に加熱されているので、原料ガス中
の薄膜成分元素が基板に吸収されて密度の低いガスに変
わり、この低密度のガスに向かってボートまわりを流れ
ている高密度の原料ガスが拡散し、膜の厚みが成長して
行く。このように、基板表面には、密度に濃淡のある,
かつ位置が不安定な渦が生じないので、ボートの軸方向
全長にわたり、基板表面に膜厚の均一な膜が形成され
る。また、横型装置では、ボートは縦型装置におけるリ
ングを円板としているのが普通であり、かつ円板の直径
は基板径より大きいので、上述と同様の経過でボートの
軸方向全長にわたり基板表面の膜厚が均一化される。ま
た横型装置でボートの構造を、基板面積の一部を利用し
て各基板を狭持するものとしたものでは、基板周縁の角
に微小な渦を生じるが、この渦に包まれる周縁側の幅は
極めて小さいので、薄膜面積歩留りへの影響は実質的に
無視することができる。
In this way, the peripheral surface of the tubular contour formed by the substrate to be processed and the boat in the state where only the boat or the substrate to be processed is mounted on the boat on the side of the reaction gas source gas introduction port of the boat stage. If the air conditioning section is provided with a tubular contour that has the same shape as the cross section and an equal circumferential cross section, the air conditioning section has the same circumferential contour as the tubular contour on the boat side. A tubular space is formed between the tubular contour from the wall and the smooth inner wall surface of the reaction tube, and the source gas whose flow is disturbed on the upstream side of the boat such as the boat side end of the heat shield mechanism When the vortex that is causing turbulence disappears while traveling in a curved space, and the cylindrical contour peripheral surface of the air conditioning section is not a smooth substantial surface, the remaining flow path is left with a thin layer on the contour peripheral surface side. The cross section becomes laminar and reaches the boat position. A boat is a vertical device, and usually, a plurality of rings are connected by short struts at intervals in the axial direction.
A substrate having a tubular structure as a whole and having a diameter smaller than the outer diameter of the ring is mounted on the ring. Therefore, since the boat is not a smooth tubular body in the axial direction, the thin layer on the boat side does not become a laminar flow in the entire cross section of the flow, but the flow around the boat including this thin layer expands to the central part of the substrate, As a vortex that disturbs the flow, only a minute vortex is generated at the corner of each ring edge of the boat over the entire length of the edge, and the vortex does not reach the substrate. The raw material gas that has expanded or diffused to the central part of the substrate is heated to a high temperature, so that the thin film constituent elements in the raw material gas are absorbed by the substrate and changed to a low density gas, and toward this low density gas. The high-density source gas flowing around the boat diffuses, and the film thickness grows. Thus, the surface of the substrate has a density
In addition, since a vortex whose position is unstable does not occur, a film having a uniform film thickness is formed on the substrate surface over the entire axial length of the boat. Further, in the horizontal type device, the boat normally uses the ring in the vertical type device as a disk, and since the diameter of the disk is larger than the substrate diameter, the substrate surface over the entire axial length of the boat is the same as the above. The film thickness is uniform. Further, in a horizontal device in which the structure of the boat is such that each of the substrates is sandwiched by using a part of the substrate area, a minute vortex is generated at the corner of the peripheral edge of the substrate. Since the width is extremely small, the effect on the thin film area yield can be substantially ignored.

【0011】なお、整風部の必要軸方向長さは、整風部
まわりのガスの流速により異なり、流速が速いと、遮熱
機構のボート側端部等,整風部上流側での流れの乱れが
大きく、渦の大きさや数が増すので、整風部の必要長さ
が長くなり、流速が小さいと短かくてすむ。整風部はボ
ートステージと遮熱機構との間など、ボートステージ上
流側の空間を利用して設けるものであるので、原料ガス
の流量もしくは成膜速度等との関連で遮熱機構等、上流
側挿入物の固定位置の変更、あるいは反応管を囲むヒー
タ電熱線のタップ調整等により、均熱領域の軸方向移動
等の工夫が必要である。
The required axial length of the air conditioning section depends on the flow velocity of the gas around the air conditioning section. If the flow velocity is high, the flow disturbance on the upstream side of the air conditioning section, such as the end of the heat shield mechanism on the boat side, will occur. Since the size and number of vortices are large, the required length of the air conditioning section is long, and the flow velocity is low, the length is short. Since the air conditioning section is provided by utilizing the space on the upstream side of the boat stage, such as between the boat stage and the heat shield mechanism, the upstream side of the heat shield mechanism, etc. is related to the flow rate of the source gas or the film formation speed. It is necessary to devise such as axial movement of the soaking region by changing the fixing position of the insert or adjusting the heating wire of the heater surrounding the reaction tube.

【0012】なお、上記整風部は、ボートステージの反
応管原料ガス導入口側に備えるものとしているが、基板
処理装置として、この整風部を、ボートステージの一部
とした構造のものとしてよく、あるいは、整風部を別体
として形成してボートステージに一体化もしくは近接さ
せた構造のものとしてもよい。そして、整風部を、ボー
ト側の筒状輪郭の周面断面と同形,等大の周縁をもつ複
数の板材を、各板材の面積内に位置する支柱を介して互
いに対向状態に一体化した構造とすれば、適宜の枚数の
板材と,適宜の長さの支柱とで整風部単位を形成し、原
料ガスの流速に見合った単位数積み重ね、長さに過不足
のない整風部を容易に形成することができる。
The air conditioning section is provided on the reaction tube raw material gas introduction port side of the boat stage. However, as a substrate processing apparatus, the air conditioning section may be a part of the boat stage. Alternatively, the air conditioning section may be formed separately and integrated with or close to the boat stage. And, the air conditioning section is a structure in which a plurality of plate members having the same shape as the peripheral cross section of the tubular contour on the boat side and having a peripheral edge of equal size are integrated so as to be opposed to each other through the columns located within the area of each plate member. If so, an appropriate number of plate members and columns of an appropriate length form an air conditioning unit, and the air conditioning unit can be easily formed by stacking a number of units corresponding to the flow rate of the raw material gas. can do.

【0013】また、複数の板材を互いに対向状態に一体
化する支柱に突起もしくは切込みを設けて整風板を支持
可能とした場合には、使用する整風板の枚数や位置によ
り、整風部まわりのガス流の状態を変えることができ、
ボート内全基板上の膜厚均一化等、処理結果の面内均一
化に必要,十分な流れを形成することができる。また、
整風部を、ボート側の筒状輪郭周面断面と断面が同形,
等大の周面を周壁の外周面とする筒状体とすれば、流れ
が、表面の滑らかな筒状体と反応管内壁面との間の全断
面で層流となってボート位置に到達し、ボート内全基板
上の膜厚均一化がより確実に行われる。また、整風部
は、高温雰囲気中で使用されるので材質として石英ある
いは耐熱セラミックスが用いられるため、整風部を筒状
体として構造を単純化することにより、整風部をより安
価に形成することができる。
Further, when a protrusion or a notch is provided on a column which integrally integrates a plurality of plate members in a state of being opposed to each other so that the air conditioning plate can be supported, the gas around the air conditioning part is changed depending on the number and position of the air conditioning plates to be used. You can change the flow condition,
It is possible to form a flow that is necessary and sufficient for making the processing result uniform on the surface, such as making the film thickness uniform on all the substrates in the boat. Also,
The air conditioning section has the same cross section as the cross section of the tubular contour on the boat side.
If a cylindrical body with an equal-sized peripheral surface as the outer peripheral surface of the peripheral wall is used, the flow reaches the boat position as a laminar flow over the entire cross section between the cylindrical body with a smooth surface and the inner wall surface of the reaction tube. Therefore, the film thickness on all the substrates in the boat can be made more reliable. Further, since the air conditioning section is used in a high-temperature atmosphere, quartz or heat-resistant ceramics is used as the material, so the air conditioning section can be formed at a lower cost by simplifying the structure using a tubular body. it can.

【0014】[0014]

【実施例】図1に請求項第3項発明の一実施例を示す。
この実施例では、整風部はボートステージの一部として
形成され、板材3の厚みの途中から板材4側をボートス
テージ中の整風部と考えることができる。整風部は構成
材料をSiO2 として元のボートステージ(図3,符号
14)に一体化され、板材3,4を対向状態に一体化す
る支柱5は、この例では、板材の周縁に沿って4本配さ
れ、それぞれ複数の切込み5aが形成され、この切込み
に例えばSiC系のセラミックス材料からなる,板材
3,4と周縁の実質全範囲にわたり同径の整風板が挿入
される。板材3,4の外径は、ボートを構成する多段リ
ングの外径に等しく設定され、整風部が形成する筒状輪
郭の周面断面とボート側の筒状輪郭周面断面とを形状,
寸法ともに同一としている。なお、図の符号3aは、ボ
ートステージを軸方向に移動させる棒体を固定するため
のボスであり、符号3bはボートのボートステージ面上
の位置決めをするための孔である。なお、図中の寸法は
実装置を対象とした一例を示す。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an embodiment of the invention according to claim 3.
In this embodiment, the air conditioning section is formed as a part of the boat stage, and the plate material 4 side can be considered as the air conditioning section in the boat stage from the middle of the thickness of the plate material 3. The air conditioning section is integrated with the original boat stage (reference numeral 14 in FIG. 3) using SiO 2 as a constituent material, and the support column 5 that integrates the plate members 3 and 4 in a facing state is formed along the peripheral edge of the plate member in this example. A plurality of cuts 5a are formed in each of the four slits, and air-conditioning plates made of, for example, a SiC-based ceramic material and having the same diameter are inserted into the cuts 5a over substantially the entire range of the peripheral edges. The outer diameters of the plate members 3 and 4 are set to be equal to the outer diameters of the multi-stage rings forming the boat, and the peripheral surface section of the tubular contour formed by the air conditioning section and the cylindrical contour peripheral section on the boat side are shaped,
The dimensions are the same. Reference numeral 3a in the drawing is a boss for fixing a rod body that moves the boat stage in the axial direction, and reference numeral 3b is a hole for positioning the boat on the boat stage surface. It should be noted that the dimensions in the figure show an example intended for an actual device.

【0015】図2には、図1に示した整風部を有するボ
ートステージにボートを支持させた状態を、従来のボー
トステージの場合と対比して示す。整風部が従来のボー
トステージ1と遮熱機構6との間の空隙を活用して設け
られている様子がわかる。なお、図では、図を見易くす
るため、ボートの多段リングを省略してある。図1に示
したボートステージ2を用い、以下の条件でSiO2
を形成した。
FIG. 2 shows a state in which the boat is supported by the boat stage having the air conditioning section shown in FIG. 1, in comparison with the conventional boat stage. It can be seen that the air conditioning section is provided by utilizing the gap between the conventional boat stage 1 and the heat shield mechanism 6. In the figure, the multi-stage ring of the boat is omitted in order to make the figure easier to see. Using the boat stage 2 shown in FIG. 1, a SiO 2 film was formed under the following conditions.

【0016】成膜温度:690〔℃〕 原料(以下の3つは常態液体材料で、膜形成にはその蒸
気を原料ガスとして用いる): TEOS〔Tetra-Ortho-Silicate,Si(OC2 5 )4〕:
50〔SCCM〕 TMOP〔Trimehyl Phosphate,PO(OCH3 ) 3 〕:1
5〔SCCM〕 TEB 〔Triethyl Borate,B(OC2 5 )4〕:4〔S
CCM〕 これらの蒸気のほかに、 O2 :300〔SCCM〕 成膜時の圧力:0.5〔Torr〕 以上の条件で膜厚6000ÅのSiO2 膜を繰り返し成
膜の結果、石英ボートの下部に位置するSi基板でも、
整風板が挿入された整風部により流れの乱れが収まり、
基板中央部へまわり込んでくる原料ガス中に乱れがな
く、膜厚分布±5%程度以下を安定して得ることができ
た。
Film-forming temperature: 690 [° C.] Raw material (the following three are normal liquid materials, and the vapor is used as a raw material gas for film formation): TEOS [Tetra-Ortho-Silicate, Si (OC 2 H 5) ) 4 ]:
50 [SCCM] TMOP [Trimehyl Phosphate, PO (OCH 3 ) 3 ]: 1
5 [SCCM] TEB [Triethyl Borate, B (OC 2 H 5 ) 4 ]: 4 [S
CCM] In addition to these vapors, O 2 : 300 [SCCM] Pressure during film formation: 0.5 [Torr] As a result of repeatedly forming a SiO 2 film having a film thickness of 6000 Å under the conditions above, the lower part of the quartz boat Even the Si substrate located at
The turbulence of the flow is stopped by the air conditioning section with the air conditioning plate inserted,
There was no turbulence in the raw material gas flowing into the central part of the substrate, and a film thickness distribution of ± 5% or less could be stably obtained.

【0017】[0017]

【発明の効果】以上に述べたように、本発明において
は、冒頭記載の基本構成による基板処理装置を、ボート
ステージの反応管原料ガス導入口側に、ボートのみある
いは被処理基板がボートに塔載された状態で被処理基板
とボートとで形成する筒状輪郭の周面断面と同形,等大
の周面断面を持つ筒状の輪郭を形成する整風部を備えた
装置としたので、反応管内を原料ガス導入口側からボー
ト方向へ流れる原料ガスの流れに乱れがあっても、整風
部位置到達後は、流れが整風部輪郭の筒状周面と反応管
内壁面との間の筒状の流れとなり、乱れを構成している
渦が流れとともに消えて行き、ボート位置到達後は整風
部あるいはボート周面側の薄い層を残して残りが層流化
され、この層流を構成している原料ガスが基板まわりか
ら一様に基板中央部へ拡散して膜が形成されるようにな
るため、基板表面近傍には、密度に濃淡がありかつ位置
が不安定な渦が存在せず、ボートの上流側に位置する基
板でも、前記実施例のように、基板表面に膜厚の均一な
膜が得られるようになり、装置のスループットを向上さ
せることができた。
As described above, according to the present invention, the substrate processing apparatus having the basic configuration described in the beginning is provided on the side of the reaction gas source gas introducing port of the boat stage, and only the boat or the substrate to be processed is towered on the boat. Since the apparatus is provided with an air conditioning unit that forms a cylindrical contour having the same circumferential cross section as that of the cylindrical contour formed by the substrate to be processed and the boat in the mounted state, Even if there is turbulence in the flow of the raw material gas flowing from the raw material gas inlet side in the tube toward the boat, after reaching the air conditioning section, the flow is tubular between the peripheral surface of the contour of the air conditioning section and the inner wall surface of the reaction tube. The vortices that make up the turbulence disappear along with the flow, and after reaching the boat position, the remainder is made laminar, leaving a thin layer on the air conditioning section or the boat peripheral surface side. The source gas is uniformly distributed around the substrate. Since a film is formed by diffusion, near the substrate surface, there is no vortex whose density is light and dark and whose position is unstable, and even in the substrate located upstream of the boat, Thus, a film having a uniform film thickness can be obtained on the surface of the substrate, and the throughput of the device can be improved.

【0018】なお、上記効果をもたらす整風部を、請求
項第2項発明の構造とすることにより、原料ガスの流量
に応じた高さのものの形成が容易となり、また、請求項
第3項発明の構造とすることにより、整風板の枚数調整
や位置調整が容易となることから、ボート内全基板上の
膜厚分布均一化に必要,十分な流れを形成することがで
きる。
By providing the air conditioning section having the above effect with the structure according to the second aspect of the invention, it becomes easy to form the air conditioning portion having a height corresponding to the flow rate of the raw material gas, and the third aspect of the invention. With this structure, it is easy to adjust the number of air rectifying plates and position of the air rectifying plate, and thus it is possible to form a flow necessary and sufficient for uniforming the film thickness distribution on all the substrates in the boat.

【0019】さらに、整風部を、請求項第4項の構造と
することにより、原料ガスの流れが全断面で層流化して
ボート位置に到達するので、膜厚均一化がより一層確実
に行われる。また、整風部の構造が単純化され、整風部
を安価に形成することができる。
Further, since the air conditioning section has the structure according to the fourth aspect, the flow of the raw material gas becomes a laminar flow in the entire cross section and reaches the boat position, so that the film thickness can be made more reliable. Be seen. Further, the structure of the air conditioning section is simplified, and the air conditioning section can be formed at low cost.

【図面の簡単な説明】[Brief description of drawings]

【図1】請求項第3項発明による整風部の一実施例を示
す図であって、同図(a)は上面図、同図(b)は正面
1A and 1B are views showing an embodiment of an air conditioning unit according to claim 3, wherein FIG. 1A is a top view and FIG. 1B is a front view.

【図2】図1に示した整風部を備えたボートステージに
ボートを支持させたときの常態を、従来のボートステー
ジの場合と対比して示す図であって、同図(a)は従来
のボートステージにボートを支持させた状態を示す図、
同図(b)は図1に示した整風部を備えたボートステー
ジにボートを支持させた状態を示す図
FIG. 2 is a view showing a normal state when a boat is supported on a boat stage equipped with the air conditioning section shown in FIG. 1, in comparison with the case of a conventional boat stage, and FIG. Figure showing the state of supporting the boat on the boat stage of
FIG. 2B is a view showing a state in which the boat is supported on the boat stage having the air conditioning unit shown in FIG.

【図3】本発明が対象とした基板処理装置の従来の構成
例を示す断面図
FIG. 3 is a cross-sectional view showing a conventional configuration example of a substrate processing apparatus targeted by the present invention.

【符号の説明】[Explanation of symbols]

1 ボートステージ 2 ボートステージ 3 板材 4 板材 5 支柱 7 ボート 10 反応管 11 ヒータ 12 基板(被処理基板) 13 ボート 14 ボートステージ 15 遮熱機構 16 原料ガス導入管 1 Boat Stage 2 Boat Stage 3 Plate Material 4 Plate Material 5 Support 7 Boat 10 Reaction Tube 11 Heater 12 Substrate (Processing Substrate) 13 Boat 14 Boat Stage 15 Heat Shielding Mechanism 16 Raw Material Gas Introducing Pipe

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】内部空間が反応室となる筒状の反応管と、
反応管内で複数の被処理基板を反応管の軸方向積層状態
に塔載するボートと、ボートを支持し反応管内の軸方向
所定位置にボートを位置決めするボートステージとを備
え、反応管内に位置する被処理基板を所定温度に加熱し
つつボートステージの反ボート側に位置する反応管の原
料ガス導入口から反応管内へ原料ガスを反応管内で低圧
力となるように導入して被処理基板表面に薄膜を形成
し、あるいは基板表面の酸化,基板表面から基板内部へ
の不純物あるいはイオンの拡散等の熱処理を行う基板処
理装置において、ボートステージの反応管原料ガス導入
口側に、ボートのみあるいは被処理基板がボートに塔載
された状態で被処理基板とボートとで形成する筒状輪郭
の周面断面と同形,等大の周面断面をもつ筒状の輪郭を
形成する整風部を備えていることを特徴とする基板処理
装置。
1. A cylindrical reaction tube having an internal space as a reaction chamber,
Located in the reaction tube is equipped with a boat that mounts a plurality of substrates to be processed in the reaction tube in an axially stacked state of the reaction tube, and a boat stage that supports the boat and positions the boat at a predetermined axial position in the reaction tube. While heating the substrate to be processed to a predetermined temperature, the raw material gas is introduced from the raw material gas inlet of the reaction tube located on the side opposite to the boat stage into the reaction tube to a low pressure inside the reaction tube, and then the surface of the substrate to be processed is introduced. In a substrate processing apparatus that forms a thin film or performs heat treatment such as oxidation of the substrate surface or diffusion of impurities or ions from the substrate surface to the inside of the substrate, only the boat or the treated object at the reaction gas source gas inlet side of the boat stage Provided with an air conditioning section that forms a cylindrical contour having the same peripheral surface cross section as the cylindrical contour formed by the substrate to be processed and the boat while the substrate is mounted on the boat. A substrate processing apparatus, characterized by that.
【請求項2】請求項第1項に記載の装置において、ボー
ト側の筒状輪郭の周面断面と同形,等大の周面断面をも
つ筒状の輪郭を形成する整風部は、該輪郭の周面断面と
同形,等大の周縁をもつ複数の板材を、各板材の面積内
に位置する支柱を介して互いに対向状態に一体化してな
る構造のものであることを特徴とする基板処理装置。
2. The apparatus according to claim 1, wherein the air conditioning section forming a tubular contour having a peripheral cross-section of the same shape and equal size as the peripheral cross-section of the tubular contour on the boat side is the contour. Substrate processing having a structure in which a plurality of plate materials having the same shape as the peripheral cross-section and a peripheral edge of equal size are integrated so as to face each other via a pillar located within the area of each plate material. apparatus.
【請求項3】請求項第2項に記載の装置において、複数
の板材を互いに対向状態に一体化する支柱は、各板材間
で板材周縁に沿ってそれぞれ複数設けられ、整風板を支
持可能な突起もしくは切込みを備えていることを特徴と
する基板処理装置。
3. The apparatus according to claim 2, wherein a plurality of support columns that integrate a plurality of plate members in a mutually opposing state are provided along the peripheral edge of the plate members so as to support the air conditioning plate. A substrate processing apparatus comprising a protrusion or a notch.
【請求項4】請求項第1項に記載の装置において、ボー
ト側の筒状輪郭の周面断面と同形,等大の周面断面をも
つ筒状の輪郭を形成する整風部は、該周面を周壁の外周
面とする筒状体としたことを特徴とする基板処理装置。
4. The apparatus according to claim 1, wherein the air conditioning section forming a tubular contour having a circumferential cross-section having the same shape and equal size as the circumferential cross-section of the boat-side tubular contour is the circumferential contour. A substrate processing apparatus, characterized in that it is a cylindrical body whose surface is an outer peripheral surface of a peripheral wall.
JP3275894A 1994-03-03 1994-03-03 Substrate treatment device Pending JPH07245273A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3275894A JPH07245273A (en) 1994-03-03 1994-03-03 Substrate treatment device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3275894A JPH07245273A (en) 1994-03-03 1994-03-03 Substrate treatment device

Publications (1)

Publication Number Publication Date
JPH07245273A true JPH07245273A (en) 1995-09-19

Family

ID=12367749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3275894A Pending JPH07245273A (en) 1994-03-03 1994-03-03 Substrate treatment device

Country Status (1)

Country Link
JP (1) JPH07245273A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003041139A1 (en) * 2001-11-08 2003-05-15 Tokyo Electron Limited Thermal treating apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003041139A1 (en) * 2001-11-08 2003-05-15 Tokyo Electron Limited Thermal treating apparatus
US7144823B2 (en) 2001-11-08 2006-12-05 Tokyo Electron Limited Thermal treatment apparatus
US7479619B2 (en) 2001-11-08 2009-01-20 Tokyo Electron Limited Thermal processing unit

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