JPH0722819A - Hybrid integrated circuit - Google Patents
Hybrid integrated circuitInfo
- Publication number
- JPH0722819A JPH0722819A JP5163053A JP16305393A JPH0722819A JP H0722819 A JPH0722819 A JP H0722819A JP 5163053 A JP5163053 A JP 5163053A JP 16305393 A JP16305393 A JP 16305393A JP H0722819 A JPH0722819 A JP H0722819A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- dielectric constant
- integrated circuit
- hybrid integrated
- impedance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は混成集積回路に関し、特
に移動体通信の送受信機等に用いる高周波の混成集積回
路に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid integrated circuit, and more particularly to a high frequency hybrid integrated circuit used in a transmitter / receiver for mobile communication.
【0002】[0002]
【従来の技術】従来のこの種の混成集積回路は、平面図
およびそのXY断面図である図3(A),(B)に示す
ように、放熱板4の上に半田付けされた例えば、誘電率
(εr)8〜10のセラミック等の基板3上に形成され
たマイクロストリップ線路6と、マイクロストリップ線
路6に搭載されたチップ抵抗R1〜R4と、チップコン
デンサC1〜C8と、スルーホール7を介して放熱板4
に半田付けされ基板3に搭載されたトランジスタ1,2
と、外部回路接続用の複数のリード5とを備える。トラ
ンジスタ2の出力側マイクロストリップ線路6にはトラ
ンジスタ2の出力インピーダンス整合用のラダー状に形
成された調整回路9を備える。2. Description of the Related Art A conventional hybrid integrated circuit of this type is, for example, soldered on a heat sink 4 as shown in FIGS. 3A and 3B, which are plan views and XY sectional views thereof. A microstrip line 6 formed on a substrate 3 such as a ceramic having a dielectric constant (εr) of 8 to 10, chip resistors R1 to R4 mounted on the microstrip line 6, chip capacitors C1 to C8, and through holes 7. Through the heat sink 4
Transistors 1 and 2 soldered to and mounted on substrate 3
And a plurality of leads 5 for connecting an external circuit. The output side microstrip line 6 of the transistor 2 is provided with a ladder-shaped adjusting circuit 9 for matching the output impedance of the transistor 2.
【0003】従来の混成集積回路の動作について説明す
ると、細部を図4(A)に示す調整回路9はコンデンサ
C7とLC共振回路を構成し、次のようにして、トラン
ジスタ2の出力インピーダンスと外部回路との整合を取
る。すなわち、図4(A)において、調整回路9のバー
a,b,cを順次切断することにより、調整回路9のL
C成分が大きくなり、図4(B)に示すスミスチャート
上におけるトランジスタ2の出力インピーダンス(A
点)が、誘導性(+xj)領域をB点の方向に移動する
とともに、容量性(−xj)領域側(C方向)に変化す
る。したがって、チップコンデンサC7の容量値を変更
すなわち交換することなくインピーダンス整合の調整が
できる。The operation of the conventional hybrid integrated circuit will be described. The adjustment circuit 9 shown in detail in FIG. 4A constitutes a capacitor C7 and an LC resonance circuit. The output impedance of the transistor 2 and the external circuit are as follows. Match the circuit. That is, in FIG. 4 (A), the bars a, b, and c of the adjusting circuit 9 are sequentially cut so that L of the adjusting circuit 9 is cut.
The C component becomes large, and the output impedance (A of the transistor 2 on the Smith chart shown in FIG.
The point moves in the inductive (+ xj) region in the direction of the point B and changes to the capacitive (−xj) region side (C direction). Therefore, the impedance matching can be adjusted without changing, that is, replacing the capacitance value of the chip capacitor C7.
【0004】なお、上記インピーダンス調整方法は、特
開昭61−133702号公報(文献1)記載のマイク
ロストリップ線路に設けたインピーダンス調整用のオー
プンスタブの一部の切断によりこのインピーダンス調整
を行なう方法の一変形である。The above impedance adjusting method is a method of performing this impedance adjustment by cutting a part of an impedance adjusting open stub provided in a microstrip line described in Japanese Patent Application Laid-Open No. 61-133702. It is a variation.
【0005】[0005]
【発明が解決しようとする課題】上述した従来の混成集
積回路は、基板の誘電率が大きいため、調整回路の調整
のため切断すべきバーの間隔を実用上の最小値である2
00μm以下と小さくしてもインピーダンス変化量が大
きく回路の最適値に調整することが困難であるという欠
点があった。In the conventional hybrid integrated circuit described above, since the dielectric constant of the substrate is large, the interval between the bars to be cut for adjusting the adjusting circuit is the practical minimum value.
There is a drawback that the amount of change in impedance is large and it is difficult to adjust to the optimum value of the circuit even if it is reduced to less than 00 μm.
【0006】[0006]
【課題を解決するための手段】本発明の混成集積回路
は、第1の誘電率の誘電体基板の一主面に搭載した複数
の周辺回路素子を含む高周波半導体装置と、入出力イン
ピーダンス整合用のインピーダンス調整素子を含み第1
のマイクロストリップ線路で形成した前記高周波半導体
装置の入出力回路を含む信号電送路とを備える混成集積
回路において、前記インピーダンス調整素子が前記第1
の誘電率よりも低い第2の誘電率の誘電体上に形成され
る予め定めた形状の第2のマイクロストリップ線路を備
えて構成されている。SUMMARY OF THE INVENTION A hybrid integrated circuit of the present invention is used for input / output impedance matching with a high frequency semiconductor device including a plurality of peripheral circuit elements mounted on one main surface of a dielectric substrate having a first dielectric constant. Including an impedance adjusting element of the first
And a signal transmission path including an input / output circuit of the high-frequency semiconductor device formed of the microstrip line, the impedance adjusting element having the first
The second microstrip line having a predetermined shape is formed on a dielectric having a second dielectric constant lower than the dielectric constant.
【0007】[0007]
【実施例】次に、本発明の実施例について図面を参照し
て説明する。この発明の一実施例の平面図である図1を
参照すると、この実施例の混成集積回路は、上述の従来
の混成集積回路の諸構成要素1〜7,C1〜C7,R1
〜R4に加えて、従来の調整部9の代りに調整部8を備
える。Embodiments of the present invention will now be described with reference to the drawings. Referring to FIG. 1, which is a plan view of an embodiment of the present invention, the hybrid integrated circuit of this embodiment is configured such that the constituent elements 1 to 7, C1 to C7, and R1 of the conventional hybrid integrated circuit described above.
In addition to ~ R4, an adjusting unit 8 is provided instead of the conventional adjusting unit 9.
【0008】この発明を特徴ずける調整部8の細部を示
す図2を参照すると、この調整部8は基板3の誘電率
(εr=8〜10)より低い誘電率の例えばテフロン系
(εr=2〜3)の誘電体を用いた基板81と、基板8
1上に従来の調整部9と同様にマイクロストリップ線路
として形成した調整用のバーe,f,gを有するラダー
部82とを備える。基板81は接着剤等で基板3に接着
され、ラダー部82は半田付けにより、マイクロストリ
ップ線路6に接続される。Referring to FIG. 2 showing details of the adjusting unit 8 which is a feature of the present invention, the adjusting unit 8 has a dielectric constant lower than that of the substrate 3 (εr = 8 to 10), for example, a Teflon system (εr =). Substrate 81 using the dielectric material of 2-3) and substrate 8
1 and a ladder section 82 having adjustment bars e, f, g formed as microstrip lines as in the conventional adjustment section 9. The substrate 81 is bonded to the substrate 3 with an adhesive or the like, and the ladder portion 82 is connected to the microstrip line 6 by soldering.
【0009】動作について説明すると、基板81はベー
スの基板3に比較して誘電率がおよそ1/3〜1/5で
あるため、それら基板上のマイクロストリップ線路が同
一の物理長でもラダー部82の電気長は基板3上の調整
部9の電気長の1/√3〜1/√5、平均をとって約1
/2となる。したがって、インピーダンス調整のために
物理長を変更するためのラダー部82のバーe,f,g
の間隔を調整部9のバーa,b,cの間隔と同一の寸法
としても、他の条件が同一であれば、電気長の変化は従
来の約1/2ステップとなり、よりきめの細かい調整が
可能となる。In operation, since the substrate 81 has a dielectric constant of about ⅓ to ⅕ as compared with the base substrate 3, even if the microstrip lines on these substrates have the same physical length, the ladder section 82 is provided. Has an electric length of 1 / √3 to 1 / √5 of the electric length of the adjusting unit 9 on the substrate 3, and the average is about 1
/ 2. Therefore, the bars e, f, g of the ladder unit 82 for changing the physical length for impedance adjustment
Even if the interval is the same as the interval between the bars a, b, and c of the adjusting unit 9, if the other conditions are the same, the change in the electrical length is about 1/2 step of the conventional one, and a finer adjustment is possible. Is possible.
【0010】以上、本発明の実施例を説明したが、本発
明は上述の実施例に限られることがなく種々の変形が可
能である。例えば、ラダー部の代りに文献1記載のよう
なオープンスタブを用いることも、本発明の趣旨を逸脱
しない限り適用できることは勿論である。Although the embodiments of the present invention have been described above, the present invention is not limited to the above-mentioned embodiments and various modifications can be made. For example, it is needless to say that the open stub as described in Document 1 may be used instead of the ladder section as long as it does not depart from the gist of the present invention.
【0011】[0011]
【発明の効果】以上説明したように、本発明の混成集積
回路は、インピーダンス調整素子がベース基板の誘電率
よりも低い誘電率の誘電体上に形成されるマイクロスト
リップ線路を用いた調整部を備えることにより、上記マ
イクロストリップ線路の物理長の変化対応のインピーダ
ンス変化量が小さく、回路を容易に最適値に調整するこ
とが可能であるという効果がある。As described above, in the hybrid integrated circuit of the present invention, the impedance adjusting element is provided with an adjusting portion using a microstrip line formed on a dielectric material having a dielectric constant lower than that of the base substrate. With the provision, there is an effect that the amount of impedance change corresponding to the change in the physical length of the microstrip line is small, and the circuit can be easily adjusted to the optimum value.
【図1】本発明の混成集積回路の一実施例を示す平面図
である。FIG. 1 is a plan view showing an embodiment of a hybrid integrated circuit of the present invention.
【図2】図1の調整部の細部を示す平面図である。FIG. 2 is a plan view showing details of an adjusting unit in FIG.
【図3】従来の混成集積回路の一例を示す平面図および
断面図である。FIG. 3 is a plan view and a cross-sectional view showing an example of a conventional hybrid integrated circuit.
【図4】図3の調整部の細部を示す平面図および調整の
一例を示すスミスチャートである。4A and 4B are a plan view showing details of an adjustment unit in FIG. 3 and a Smith chart showing an example of adjustment.
1,2 トランジスタ 3,81 基板 4 放熱板 5 リード 6 マイクロストリップ線路 7 スルーホール 8,9 調整部 82 ラダー部 C1〜C7 チップコンデンサ R1〜R4 チップ抵抗 1, 2 Transistor 3,81 Substrate 4 Heat sink 5 Lead 6 Microstrip line 7 Through hole 8,9 Adjustment part 82 Ladder part C1 to C7 Chip capacitors R1 to R4 Chip resistance
Claims (3)
載した複数の周辺回路素子を含む高周波半導体装置と、
入出力インピーダンス整合用のインピーダンス調整素子
を含み第1のマイクロストリップ線路で形成した前記高
周波半導体装置の入出力回路を含む信号電送路とを備え
る混成集積回路において、 前記インピーダンス調整素子が前記第1の誘電率よりも
低い第2の誘電率の誘電体上に形成される予め定めた形
状の第2のマイクロストリップ線路を備えることを特徴
とする混成集積回路。1. A high-frequency semiconductor device including a plurality of peripheral circuit elements mounted on one main surface of a dielectric substrate having a first dielectric constant,
In a hybrid integrated circuit including a signal transmission path including an input / output circuit of the high-frequency semiconductor device, which includes an impedance adjustment element for input / output impedance matching, and is formed of a first microstrip line, the impedance adjustment element includes: A hybrid integrated circuit comprising a second microstrip line of a predetermined shape formed on a dielectric having a second dielectric constant lower than the dielectric constant.
前記第2のマイクロストリップ線路で形成され縦方向に
平行に配置された予め定めた幅の2つの第1の線路とこ
れら2つの第1の線路を短絡するように配置された横方
向の複数の第2の線路とから成るはしご形である前記形
状のスタブ回路を備え、 前記複数の第2の線路を1つずつ切断することによりイ
ンピーダンス調整を行なうことを特徴とする請求項1記
載の混成集積回路。2. The impedance adjusting element is formed by the second microstrip line, and two first lines having a predetermined width and arranged in parallel in the longitudinal direction are short-circuited to these two first lines. A ladder-shaped stub circuit composed of a plurality of lateral second lines arranged so that impedance adjustment is performed by cutting the plurality of second lines one by one. The hybrid integrated circuit according to claim 1, wherein:
前記第2のマイクロストリップ線路で形成された予め定
めた形状のオープンスタブを備え、 前記オープンスタブを予め定めた調整規則に基ずいて1
ステップつずつ切除することによりインピーダンス調整
を行なうことを特徴とする請求項1記載の混成集積回
路。3. The impedance adjusting element comprises an open stub having a predetermined shape, which is formed by the second microstrip line, and the open stub is based on a predetermined adjustment rule.
The hybrid integrated circuit according to claim 1, wherein the impedance adjustment is performed by cutting out step by step.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5163053A JP2590686B2 (en) | 1993-07-01 | 1993-07-01 | Hybrid integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5163053A JP2590686B2 (en) | 1993-07-01 | 1993-07-01 | Hybrid integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0722819A true JPH0722819A (en) | 1995-01-24 |
JP2590686B2 JP2590686B2 (en) | 1997-03-12 |
Family
ID=15766283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5163053A Expired - Fee Related JP2590686B2 (en) | 1993-07-01 | 1993-07-01 | Hybrid integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2590686B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1079458A2 (en) * | 1999-08-25 | 2001-02-28 | Murata Manufacturing Co., Ltd. | Variable inductance element |
KR100294980B1 (en) * | 1997-12-12 | 2001-09-17 | 김춘호 | Radio frequency switch using distributed constant line capable of controlling length of signal path |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63193602A (en) * | 1987-02-04 | 1988-08-10 | Murata Mfg Co Ltd | Method for determining circuit pattern |
JPH02215209A (en) * | 1989-02-16 | 1990-08-28 | Matsushita Electric Ind Co Ltd | Microwave low noise converter |
JPH03119806A (en) * | 1989-10-03 | 1991-05-22 | Kyocera Corp | Microwave plane circuit adjusting method |
JPH043502A (en) * | 1990-04-19 | 1992-01-08 | Tokin Corp | High frequency circuit impedance adjustment method |
-
1993
- 1993-07-01 JP JP5163053A patent/JP2590686B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63193602A (en) * | 1987-02-04 | 1988-08-10 | Murata Mfg Co Ltd | Method for determining circuit pattern |
JPH02215209A (en) * | 1989-02-16 | 1990-08-28 | Matsushita Electric Ind Co Ltd | Microwave low noise converter |
JPH03119806A (en) * | 1989-10-03 | 1991-05-22 | Kyocera Corp | Microwave plane circuit adjusting method |
JPH043502A (en) * | 1990-04-19 | 1992-01-08 | Tokin Corp | High frequency circuit impedance adjustment method |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100294980B1 (en) * | 1997-12-12 | 2001-09-17 | 김춘호 | Radio frequency switch using distributed constant line capable of controlling length of signal path |
EP1079458A2 (en) * | 1999-08-25 | 2001-02-28 | Murata Manufacturing Co., Ltd. | Variable inductance element |
EP1079458A3 (en) * | 1999-08-25 | 2001-03-07 | Murata Manufacturing Co., Ltd. | Variable inductance element |
US6404319B1 (en) | 1999-08-25 | 2002-06-11 | Murata Manufacturing, Co., Ltd. | Variable inductance element |
Also Published As
Publication number | Publication date |
---|---|
JP2590686B2 (en) | 1997-03-12 |
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