JPH07221064A - Semiconductor wafer washing dryer - Google Patents

Semiconductor wafer washing dryer

Info

Publication number
JPH07221064A
JPH07221064A JP1255794A JP1255794A JPH07221064A JP H07221064 A JPH07221064 A JP H07221064A JP 1255794 A JP1255794 A JP 1255794A JP 1255794 A JP1255794 A JP 1255794A JP H07221064 A JPH07221064 A JP H07221064A
Authority
JP
Japan
Prior art keywords
container
semiconductor wafer
inert gas
high temperature
temperature inert
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1255794A
Other languages
Japanese (ja)
Inventor
Yukio Higaki
幸夫 檜垣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1255794A priority Critical patent/JPH07221064A/en
Publication of JPH07221064A publication Critical patent/JPH07221064A/en
Pending legal-status Critical Current

Links

Landscapes

  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To obtain a semiconductor wafer washing dryer which can uniformly dry a semiconductor. CONSTITUTION:The title dryer consists of a container 7 for housing a semiconductor wafer 1, a pure-water supply means 8 for supplying pure water into the container 7, a high-temperature inert gas supply means 10 for supplying a high-temperature inactive gas into the container 7, and a vacuum exhaust means 11 for evacuating the container 7 according to the supply of the high- temperature inert gas and reducing pressure.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は半導体ウエハプロセス
におけるウエハ洗浄乾燥装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer cleaning / drying apparatus in a semiconductor wafer process.

【0002】[0002]

【従来の技術】図3は従来の技術による半導体ウエハの
洗浄乾燥システムを示す模式図である。図において、1
は半導体ウエハ、2は半導体ウエハ1が薬液2a中に侵
漬される薬液槽、3は半導体ウエハ1が超純水3aで水
洗いされる水洗槽、4は半導体ウエハ1が乾燥される乾
燥槽であり親水性をもつ有機溶剤5をヒータ6で加熱す
る機構を備えている。
2. Description of the Related Art FIG. 3 is a schematic diagram showing a conventional semiconductor wafer cleaning / drying system. In the figure, 1
Is a semiconductor wafer, 2 is a chemical solution tank in which the semiconductor wafer 1 is immersed in the chemical solution 2a, 3 is a washing tank in which the semiconductor wafer 1 is washed with ultrapure water 3a, and 4 is a drying tank in which the semiconductor wafer 1 is dried. A mechanism for heating the hydrophilic organic solvent 5 with the heater 6 is provided.

【0003】次に動作について説明する。まず薬液槽2
に侵漬された半導体ウエハ1はエッチングや洗浄などの
処理をほどこされる。次に水洗槽3に移されて薬液2a
を超純水3aで洗い流される。つづいて乾燥槽4に移さ
れる、ここではイソプロピルアルコールなどの親水性を
もつ有機溶剤5が加熱ヒータ6によって連続的に蒸発し
ており、半導体ウエハ1表面に残留する水を置換蒸発、
乾燥させる。なお、図3では槽を3槽表記しているが洗
浄の目的や効薬を考慮して槽数を増すこともある。さら
に、乾燥槽4については記載した蒸気乾燥槽ではなく、
半導体ウエハを高速で回転させて水切りを行うスピン乾
燥機のものもある。
Next, the operation will be described. First, the chemical tank 2
The semiconductor wafer 1 soaked in is subjected to processing such as etching and cleaning. Next, it is transferred to the washing tank 3 and the chemical solution 2a
Are washed away with ultrapure water 3a. Subsequently, the organic solvent 5 having hydrophilicity such as isopropyl alcohol is continuously evaporated by the heater 6 in the drying tank 4, and the water remaining on the surface of the semiconductor wafer 1 is replaced by evaporation.
dry. Although three tanks are shown in FIG. 3, the number of tanks may be increased in consideration of the purpose of cleaning and the efficacy. Furthermore, the drying tank 4 is not the steam drying tank described above,
There is also a spin dryer in which a semiconductor wafer is rotated at high speed to drain water.

【0004】[0004]

【発明が解決しようとする課題】従来の半導体ウエハ洗
浄乾燥装置は以上のように構成されているので、半導体
ウエハ1は各槽間を移動する際に空気に触れ部分的に乾
燥し、そのため析出物あるいは斑点としてのパターン欠
陥を生じプロセス歩留まりを低下させるなどの問題点が
あった。さらに同様の現象は最終の乾燥槽4内でも発生
し、水滴が十分に有機溶剤5に置換されきらない、ある
いは均一に乾燥が進行しないなどの理由で乾燥斑を生じ
る問題点もあった。なお、スピン乾燥法でも水滴の飛散
に時間的ずれがあるため乾燥斑の発生は避けられない。
Since the conventional semiconductor wafer cleaning / drying apparatus is constructed as described above, the semiconductor wafer 1 is exposed to the air when it is moved between the tanks and is partially dried, so that it is deposited. There is a problem in that a pattern defect as an object or a spot occurs and the process yield is lowered. Furthermore, the same phenomenon occurs in the final drying tank 4, and there is a problem that unevenness in drying occurs because the water droplets are not sufficiently replaced with the organic solvent 5 or the drying does not proceed uniformly. Even in the spin drying method, the occurrence of dry spots cannot be avoided because there is a time lag in the scattering of water droplets.

【0005】この発明は上記のような問題点を解消する
ためになされたもので、乾燥斑の発生を防止し、プロセ
ス歩留まりの向上ができる半導体ウエハ洗浄乾燥装置を
得ることを目的とする。
The present invention has been made to solve the above problems, and an object thereof is to obtain a semiconductor wafer cleaning / drying apparatus capable of preventing the occurrence of dry spots and improving the process yield.

【0006】[0006]

【課題を解決するための手段】この発明に係る請求項1
の半導体ウエハ洗浄乾燥装置は、半導体ウエハを収納す
る容器と、容器内に純水を供給する純水供給手段と、容
器内に高温不活性ガスを供給する高温不活性ガス供給手
段と、高温不活性ガスの供給に合わせ容器内を真空排気
する真空排気手段とで構成したものである。
[Means for Solving the Problems] Claim 1 according to the present invention
The semiconductor wafer cleaning / drying apparatus of No. 1 is a container for storing semiconductor wafers, a pure water supply unit for supplying pure water into the container, a high temperature inert gas supply unit for supplying high temperature inert gas into the container, and a high temperature inert gas. It is composed of a vacuum evacuation means for evacuating the inside of the container in accordance with the supply of the active gas.

【0007】また、請求項2においては、半導体ウエハ
を収納する容器と、容器内に純水を供給する純水供給手
段と、容器内に高温不活性ガスを供給する高温不活性ガ
ス高圧供給手段と、耐圧容器内が高温不活性ガスで高圧
になった状態を検出し大気開放し減圧する排気手段とで
構成したものである。
Further, according to a second aspect of the present invention, a container for housing the semiconductor wafer, a pure water supply means for supplying pure water into the container, and a high temperature inert gas high pressure supply means for supplying high temperature inert gas into the container. And an exhaust means for detecting a state in which the pressure vessel is pressurized to a high pressure by a high temperature inert gas and opening the atmosphere to reduce the pressure.

【0008】また、請求項3,4においては、請求項1
又は2の構成に加え容器内に薬液を供給する薬液供給手
段を設けたものである。
Further, in claims 3 and 4, claim 1
Alternatively, in addition to the configuration of 2, the chemical liquid supply means for supplying the chemical liquid is provided in the container.

【0009】[0009]

【作用】この発明における半導体ウエハ洗浄乾燥装置
は、容器内で洗浄から乾燥までの工程が連続してなされ
るため、半導体ウエハの各槽移動がなく部分的乾燥を防
止する。
In the semiconductor wafer cleaning / drying apparatus according to the present invention, the steps from cleaning to drying are continuously performed in the container, so that there is no movement of the semiconductor wafer in each tank and partial drying is prevented.

【0010】また、乾燥時の真空排気手段又は高圧状態
を大気開放する排気手段による急激な減圧が、乾燥を瞬
時にし半導体ウエハ全面が均一に乾燥され乾燥斑の発生
を防止する。
Further, abrupt decompression by a vacuum evacuation means at the time of drying or an evacuation means for releasing a high-pressure state to the atmosphere instantaneously dries to uniformly dry the entire surface of the semiconductor wafer and prevent the occurrence of dry spots.

【0011】さらに、薬液供給手段によって同一容器内
での薬液処理から乾燥までを一貫して実施することを可
能にする。
Further, the chemical liquid supply means makes it possible to consistently carry out from the chemical liquid treatment to the drying in the same container.

【0012】[0012]

【実施例】【Example】

実施例1.以下、この発明の実施例を図について説明す
る。図1はこの発明の一実施例である半導体ウエハ洗浄
乾燥装置の概略断面構成を示す模式図である。図におい
て、1は従来例と同様の半導体ウエハ、7は半導体ウエ
ハ1を紙面垂直方向に複数枚収納する容器でここでは真
空容器、8は真空容器7と連通する供給パイプ8aバル
ブ8bなどからなり超純水を供給する純水供給手段、9
は真空容器7と連通する排水パイプ、10は真空容器7
と連通する供給パイプ10aバルブ10bなどからなり
高温不活性ガスを供給する高温不活性ガス供給手段、1
1は真空容器7の真空引きをする真空排気手段のここで
は真空ポンプ、12は排水パイプ9と真空ポンプ11と
の分岐部に設けられた三方バルブである。
Example 1. Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing a schematic cross-sectional structure of a semiconductor wafer cleaning / drying apparatus according to an embodiment of the present invention. In the figure, 1 is a semiconductor wafer similar to the conventional example, 7 is a container for accommodating a plurality of semiconductor wafers 1 in a direction perpendicular to the plane of the drawing, here a vacuum container, and 8 is a supply pipe 8a valve 8b communicating with the vacuum container 7 and the like. Pure water supply means for supplying ultrapure water, 9
Is a drain pipe communicating with the vacuum container 7, and 10 is the vacuum container 7.
A high temperature inert gas supply means for supplying a high temperature inert gas, which comprises a supply pipe 10a and a valve 10b communicating with
Reference numeral 1 denotes a vacuum pump, here a vacuum pump, for evacuating the vacuum container 7, and reference numeral 12 denotes a three-way valve provided at a branch portion between the drain pipe 9 and the vacuum pump 11.

【0013】次に動作について説明する。真空容器7の
中に半導体ウエハ1を整列収納した後、三方バルブ12
を排水パイプ9側に開くとともに純水供給手段8のバル
ブ8bを開き供給パイプ8aから常温超純水を真空容器
7内に供給する。これによって半導体ウエハ1を流し洗
いするが、この時三方バルブ12を開閉して真空容器7
内の液面を制御して洗浄を促進しても良い。常温超純水
につづいて85℃程度の高温超純水を供給し洗浄の促進
と次の乾燥に備える。更に高温にするためには100℃
以上の純水蒸気を供給しても良い。純水供給が停止され
純粋排水後、高温不活性ガス供給手段10のバルブ10
bを開き供給パイプ10aより85℃以上に加熱した窒
素等の高温不活性ガスを供給する。これと同時に三方バ
ルブ12を真空ポンプ11側に開き真空容器7内を減圧
状態とする。これにより半導体ウエハ1の表面は均等に
乾燥される。更に高温不活性ガスの供給を停止し真空状
態を継続することでより完全な乾燥状態が得られる。
Next, the operation will be described. After the semiconductor wafers 1 are aligned and stored in the vacuum container 7, the three-way valve 12
Is opened to the drain pipe 9 side and the valve 8b of the pure water supply means 8 is opened to supply normal temperature ultrapure water into the vacuum container 7 through the supply pipe 8a. As a result, the semiconductor wafer 1 is flushed and washed. At this time, the three-way valve 12 is opened and closed to open the vacuum container 7.
Cleaning may be promoted by controlling the liquid surface inside. After the normal temperature ultrapure water, high temperature ultrapure water of about 85 ° C. is supplied to promote cleaning and prepare for the next drying. 100 ℃ for higher temperature
The above pure steam may be supplied. After the pure water supply is stopped and the pure water is discharged, the valve 10 of the high temperature inert gas supply means 10
b is opened and a high temperature inert gas such as nitrogen heated to 85 ° C. or higher is supplied from the supply pipe 10a. At the same time, the three-way valve 12 is opened toward the vacuum pump 11 to bring the inside of the vacuum container 7 into a depressurized state. As a result, the surface of the semiconductor wafer 1 is evenly dried. Further, by stopping the supply of the high temperature inert gas and continuing the vacuum state, a more complete dry state can be obtained.

【0014】実施例2.また、実施例1では真空容器7
を真空排気することで半導体ウエハ1を乾燥させたが、
急激な圧力低下を発生させれば同様の目的を達成するこ
とが可能である。即ち図2において、容器は加圧容器1
3とし実施例1に記述した手順と同様に超純水による洗
浄後排水し、続いて高温不活性ガスを高温不活性ガス供
給手段10より供給する。ここで排気排水バルブ14を
閉としてさらに高温不活性ガス供給をつづけると加圧容
器13内は高温高圧状態となる。これを図示しない検出
器で検出しつづいて排気手段である排気排水バルブ14
を開くと加圧容器13内は排気パイプ15を介して一気
に大気圧に戻りこの時の減圧膨張により半導体ウエハ1
は均一に完全乾燥される。
Example 2. Further, in the first embodiment, the vacuum container 7
The semiconductor wafer 1 was dried by evacuating the
The same purpose can be achieved by generating a sudden pressure drop. That is, in FIG. 2, the container is a pressurized container 1.
In the same manner as the procedure described in the first embodiment, after cleaning with ultrapure water, drainage is performed, and then high temperature inert gas is supplied from the high temperature inert gas supply means 10. If the exhaust / drain valve 14 is closed and the high temperature inert gas is further supplied, the inside of the pressurizing container 13 becomes a high temperature / high pressure state. This is detected by a detector (not shown), and the exhaust / drain valve 14 serving as exhaust means is continuously detected.
When opened, the inside of the pressure vessel 13 returns to atmospheric pressure at once through the exhaust pipe 15, and the semiconductor wafer 1 is decompressed and expanded at this time.
Is evenly dried.

【0015】実施例3.なお、上記実施例1,2では水
洗から乾燥までの工程を提供する装置であるが、さらに
容器7,13に酸やアルカリの薬液を供給できる薬液供
給手段17(図示せず)を具備させることによって、薬
液処理から水洗、乾燥までを一貫して行うことが可能と
なる。
Example 3. In the above-mentioned Embodiments 1 and 2, the apparatus provides the steps from washing to drying, but the containers 7 and 13 should further be provided with a chemical liquid supply means 17 (not shown) capable of supplying an acid or alkali chemical liquid. This makes it possible to consistently perform processes from chemical treatment to water washing and drying.

【0016】[0016]

【発明の効果】以上のように、この発明の請求項1によ
れば半導体ウエハを収納する容器と、容器内に純水を供
給する純水供給手段と、容器内に高温不活性ガスを供給
する高温不活性ガス供給手段と、高温不活性ガスの供給
に合わせ容器内を真空排気し減圧状態にする真空排気手
段とで構成し、請求項2によれば半導体ウエハを収納す
る容器と、容器内に純水を供給する純水供給手段と、容
器内に高温不活性ガスを供給する高温不活性ガス高圧供
給手段と、容器内が高温不活性ガスで高圧になった状態
を検出し大気開放し減圧する排気手段とで構成したの
で、乾燥斑の発生が防止されプロセス歩留まりの向上が
できる半導体ウエハ洗浄乾燥装置が得られる効果があ
る。
As described above, according to the first aspect of the present invention, the container for storing the semiconductor wafer, the pure water supply means for supplying the pure water into the container, and the high temperature inert gas for the inside of the container are supplied. 3. A container for storing a semiconductor wafer according to claim 2, which comprises: a high temperature inert gas supply means, and a vacuum evacuation means for evacuating the inside of the container to reduce the pressure in accordance with the supply of the high temperature inert gas. Pure water supply means for supplying pure water into the container, high temperature inert gas high pressure supply means for supplying high temperature inert gas into the container, and detection of the high pressure inside the container due to high temperature inert gas and opening to the atmosphere Since it is constituted by the exhaust means for reducing the pressure, it is possible to obtain a semiconductor wafer cleaning / drying apparatus capable of preventing the occurrence of dry spots and improving the process yield.

【0017】さらに、請求項3,4によれば請求項1又
は2に加えて薬液供給手段を設けたので薬液処理から乾
燥までを一貫して実施することが可能なり生産性を向上
させる。
Further, according to the third and fourth aspects, in addition to the first or second aspect, the chemical liquid supply means is provided, so that it is possible to consistently carry out from the chemical liquid treatment to the drying, thereby improving the productivity.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の実施例1における半導体ウエハ洗浄
乾燥装置の構成を示す模式図である。
FIG. 1 is a schematic diagram showing a configuration of a semiconductor wafer cleaning / drying apparatus according to a first embodiment of the present invention.

【図2】この発明の実施例2における半導体ウエハ洗浄
乾燥装置の構成を示す模式図である。
FIG. 2 is a schematic diagram showing a configuration of a semiconductor wafer cleaning / drying apparatus according to a second embodiment of the present invention.

【図3】従来の半導体ウエハ洗浄乾燥システムを示す模
式図である。
FIG. 3 is a schematic diagram showing a conventional semiconductor wafer cleaning / drying system.

【符号の説明】[Explanation of symbols]

1 半導体ウエハ 7 真空容器(容器) 8 純水供給手段 10 高温不活性ガス供給手段 11 真空排気手段(真空ポンプ) 13 加圧容器(容器) 14 排気手段(排気排水バルブ) 1 Semiconductor Wafer 7 Vacuum Container (Container) 8 Pure Water Supply Means 10 High Temperature Inert Gas Supply Means 11 Vacuum Evacuation Means (Vacuum Pump) 13 Pressurized Container (Container) 14 Evacuation Means (Exhaust Drain Valve)

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 半導体ウエハを収納する容器と、該容器
内に純水を供給する純水供給手段と、上記容器内に高温
不活性ガスを供給する高温不活性ガス供給手段と、上記
高温不活性ガスの供給に合わせ上記容器内を真空排気し
減圧状態にする真空排気手段とを備えたことを特徴とす
る半導体ウエハ洗浄乾燥装置。
1. A container for accommodating a semiconductor wafer, pure water supply means for supplying pure water into the container, high temperature inert gas supply means for supplying high temperature inert gas into the container, and the high temperature inert gas. A semiconductor wafer cleaning / drying apparatus comprising: a vacuum evacuation unit that evacuates the inside of the container according to the supply of an active gas to reduce the pressure.
【請求項2】 半導体ウエハを収納する容器と、該容器
内に純水を供給する純水供給手段と、上記容器内に高温
不活性ガスを供給する高温不活性ガス供給手段と、上記
容器内が上記高温不活性ガスで高圧になった状態を検出
し大気開放し減圧する排気手段とを備えたことを特徴と
する半導体ウエハ洗浄乾燥装置。
2. A container for accommodating a semiconductor wafer, pure water supply means for supplying pure water into the container, high temperature inert gas supply means for supplying high temperature inert gas into the container, and inside the container. Is equipped with an exhaust means for detecting a high pressure of the high temperature inert gas and opening the atmosphere to reduce the pressure.
【請求項3】 半導体ウエハを収納する容器と、該容器
内に薬液を供給する薬液供給手段と、上記容器内に純水
を供給する純水供給手段と、上記容器内に高温不活性ガ
スを供給する高温不活性ガス供給手段と、上記容器内を
真空排気する真空排気手段とを備えたことを特徴とする
半導体ウエハ洗浄乾燥装置。
3. A container for housing a semiconductor wafer, a chemical solution supply means for supplying a chemical solution into the container, a pure water supply means for supplying pure water into the container, and a high temperature inert gas in the container. A semiconductor wafer cleaning / drying apparatus comprising: a high temperature inert gas supply means for supplying the gas; and a vacuum evacuation means for evacuating the inside of the container.
【請求項4】 半導体ウエハを収納する容器と、該容器
内に薬液を供給する薬液供給手段と、上記容器内に純水
を供給する純水供給手段と、上記容器内に高温不活性ガ
スを供給する高温不活性ガス供給手段と、上記容器内が
上記高温不活性ガスで高圧になった状態を検出し大気開
放し減圧する排気手段とを備えたことを特徴とする半導
体ウエハ洗浄乾燥装置。
4. A container for housing a semiconductor wafer, a chemical solution supply means for supplying a chemical solution into the container, a pure water supply means for supplying pure water into the container, and a high temperature inert gas in the container. 2. A semiconductor wafer cleaning / drying apparatus comprising: a high temperature inert gas supply means for supplying; and an exhaust means for detecting a high pressure inside the container by the high temperature inert gas to open the atmosphere to reduce the pressure.
JP1255794A 1994-02-04 1994-02-04 Semiconductor wafer washing dryer Pending JPH07221064A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1255794A JPH07221064A (en) 1994-02-04 1994-02-04 Semiconductor wafer washing dryer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1255794A JPH07221064A (en) 1994-02-04 1994-02-04 Semiconductor wafer washing dryer

Publications (1)

Publication Number Publication Date
JPH07221064A true JPH07221064A (en) 1995-08-18

Family

ID=11808651

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1255794A Pending JPH07221064A (en) 1994-02-04 1994-02-04 Semiconductor wafer washing dryer

Country Status (1)

Country Link
JP (1) JPH07221064A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143637A (en) * 1998-03-13 2000-11-07 Nec Corporation Process for production of semiconductor device and cleaning device used therein
KR100332507B1 (en) * 1996-12-20 2002-07-31 후지쯔 가부시끼가이샤 Method for manufacturing semiconductor device including substrate processing process and substrate processing apparatus
KR100464853B1 (en) * 2002-06-20 2005-01-06 삼성전자주식회사 Method and apparatus for drying wafer by instant decompressing and heating

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100332507B1 (en) * 1996-12-20 2002-07-31 후지쯔 가부시끼가이샤 Method for manufacturing semiconductor device including substrate processing process and substrate processing apparatus
US6143637A (en) * 1998-03-13 2000-11-07 Nec Corporation Process for production of semiconductor device and cleaning device used therein
KR100464853B1 (en) * 2002-06-20 2005-01-06 삼성전자주식회사 Method and apparatus for drying wafer by instant decompressing and heating

Similar Documents

Publication Publication Date Title
KR100335322B1 (en) Processing method such as semiconductor wafer and processing device therefor
US5368649A (en) Washing and drying method
JP3715052B2 (en) Wafer dryer
US6757989B2 (en) Wafer drying apparatus
US6889447B2 (en) Method for drying a wafer and apparatus for performing the same
WO2018180181A1 (en) Substrate processing device and substrate processing method
KR100480588B1 (en) Drying method of semiconductor device by using vacuum dryer
US11842903B2 (en) Apparatus for treating substrate and method for treating substrate
JP2000058498A (en) Wafer drying method, drying tank, cleaning tank and cleaning device
JP2003249478A (en) Wafer drying method
JPH07221064A (en) Semiconductor wafer washing dryer
JP2002016038A (en) Apparatus for semiconductor wafer cleaning and method for wafer cleaning using the same
JP2006294966A (en) Substrate drying method, substrate dryer and recording medium
JP6085424B2 (en) Substrate processing method, substrate processing apparatus, and storage medium
JPH06252115A (en) Method for cleaning object to be cleaned
JPH06163508A (en) Method and equipment for drying substrate
JPH0265233A (en) Device for removing moisture of semiconductor wafer
JP3999946B2 (en) Substrate processing method and substrate processing apparatus
JPH04354128A (en) Method and apparatus for chemical liquid treatment of substrate, and method and apparatus for chemical liquid treatment washing and drying of substrate
JP6117061B2 (en) Substrate processing method and apparatus
KR940008366B1 (en) Cleaning and drying method and processing apparatus therefor
JPH10289895A (en) Substrate treating method and device
CN221201089U (en) Atomizing device for drying wafer and wafer drying equipment
JP3009006B2 (en) Equipment for drying semiconductor substrates
JPH0362521A (en) Process of cleaning semiconductor wafer and device thereof