JPH0720623A - Method and device for removing unnecessary film and production of phase-shift mask blank - Google Patents

Method and device for removing unnecessary film and production of phase-shift mask blank

Info

Publication number
JPH0720623A
JPH0720623A JP16529093A JP16529093A JPH0720623A JP H0720623 A JPH0720623 A JP H0720623A JP 16529093 A JP16529093 A JP 16529093A JP 16529093 A JP16529093 A JP 16529093A JP H0720623 A JPH0720623 A JP H0720623A
Authority
JP
Japan
Prior art keywords
substrate
unnecessary film
cover member
peripheral portion
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16529093A
Other languages
Japanese (ja)
Other versions
JP3345468B2 (en
Inventor
Hideo Kobayashi
英雄 小林
Takashi Asakawa
敬司 浅川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP16529093A priority Critical patent/JP3345468B2/en
Publication of JPH0720623A publication Critical patent/JPH0720623A/en
Application granted granted Critical
Publication of JP3345468B2 publication Critical patent/JP3345468B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To provide a method and an equipment to dissolve off only an unnecessary film by a relatively simple method and to produce a phase-shift mask blank by this method. CONSTITUTION:The periphery 1a of the surface of a substrate 11 and the side face 1b of the substrate 11 are covered by the lower covering part 32 of a covering member 3 with a clearance 5 in between. A gas 6 is introduced from the gas inlet 31a of an upper covering part 31 to form a gas current flowing from the center of the substrate toward the periphery in the clearance 5, hence the intrusion of an unnecessary film removing soln. 41 supplied outside the covering member 3 from an injection nozzle 4 into the substrate center is blocked, and then the substrate 11 and the covering member 3 are simultaneously rotated by a spin chuck 2 to circulate the soln. 41 in the clearance 5 and to dissolve off the unnecessary film.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、フォトマスクブランク
ス、半導体基板、磁気ディスク用基板及びカラーフィル
ター等の基板表面に膜を形成する際に、基板表面主要部
以外の表面周縁部に形成された不要膜及び基板側面部に
形成された不要膜を除去する不要膜除去方法及びその装
置並びにこの不要膜除去方法を用いた位相シフトマスク
ブランクス製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is formed on a peripheral portion of a surface other than a main portion of a substrate surface when forming a film on the substrate surface such as a photomask blank, a semiconductor substrate, a magnetic disk substrate and a color filter. The present invention relates to an unnecessary film removing method and an apparatus for removing an unnecessary film and an unnecessary film formed on a side surface of a substrate, and a phase shift mask blank manufacturing method using the unnecessary film removing method.

【0002】[0002]

【従来の技術】例えば、半導体集積回路の製造に使用す
るフォトマスク並びにレチクル用基板を製造する分野に
おいて、基板上にSOG(スピン・オン・グラス)ある
いはレジスト等を塗布する方法として回転塗布法(スピ
ンコート法)が知られている。
2. Description of the Related Art For example, in the field of manufacturing a photomask and a reticle substrate used for manufacturing a semiconductor integrated circuit, a spin coating method (SOG (spin on glass), resist or the like is coated on the substrate. Spin coating method) is known.

【0003】この方法は、例えば、基板をスピンチャッ
クに略水平に固定し、その基板上に塗布液を滴下し、ス
ピンチャックを回転させることにより、その遠心力を利
用して基板上に均一な塗布膜を形成するものである。こ
の回転塗布法においては、塗布液の種類、塗布液の粘
度、所望する塗布膜厚により、回転数、回転時間等の調
整を行うが、基板の四隅あるいは基板周縁部にレジスト
液が溜まり、その部分に塗布膜の盛り上がり、すなわ
ち、著しく厚い部分が生じる。また、基板側面に不要な
塗布膜が形成される。特に、低粘度の塗布液を用いた場
合において、塗布膜厚を厚くするために低回転で塗布し
た場合、基板周縁部の塗布膜の盛り上がり及び基板側面
部への不要膜の形成はより顕著となる。
In this method, for example, a substrate is fixed on a spin chuck substantially horizontally, a coating solution is dropped on the substrate, and the spin chuck is rotated to make uniform on the substrate by utilizing its centrifugal force. A coating film is formed. In this spin coating method, the number of rotations, the rotation time, etc. are adjusted depending on the type of coating liquid, the viscosity of the coating liquid, and the desired coating film thickness. A bulge of the coating film, that is, a remarkably thick portion is generated in the portion. In addition, an unnecessary coating film is formed on the side surface of the substrate. In particular, when a low-viscosity coating liquid is used, when the coating film is applied at low speed to increase the coating film thickness, swelling of the coating film on the peripheral portion of the substrate and formation of an unnecessary film on the side surface of the substrate become more remarkable. Become.

【0004】図5はSOG又はレジシストを回転塗布し
た基板101の表面周縁部に形成された塗布膜の不要膜
である盛り上がり部112を示す平面図、図6は図5の
XーX線断面図である。これらの図面に示されるよう
に、基板周縁部の塗布膜が厚くなると、例えば、SOG
は亀裂もしくは剥離を生じる。図7に示したように、剥
がれたSOGの小片112aは、基板101上の表面主
要部に付着して直接欠陥となり、あるいは、欠陥の原因
となり、もしくは、以降のフォトマスクブランクスの製
造工程、フォトマスクの製作工程、フォトマスクの使用
工程において、ゴミの発生源となって各工程を汚染する
おそれがある。
FIG. 5 is a plan view showing a raised portion 112 which is an unnecessary film of a coating film formed on the peripheral portion of the surface of the substrate 101 on which SOG or resist is spin coated, and FIG. 6 is a sectional view taken along line XX of FIG. Is. As shown in these drawings, when the coating film on the peripheral portion of the substrate becomes thick, for example, SOG
Causes cracking or peeling. As shown in FIG. 7, the peeled small pieces 112a of SOG adhere to the main surface portion of the substrate 101 to directly form a defect, or cause a defect, or the subsequent photomask blank manufacturing process, photo In the mask manufacturing process and the photomask using process, there is a risk of becoming a source of dust and contaminating each process.

【0005】さらに、塗布膜たるSOGが基板表面に形
成されている位相シフトマスクを露光装置に取り付ける
際に、基板周縁部を支持する構造となっている場合があ
るが、この場合に基板周縁部が盛り上がっていると良好
に保持されないこととなる。
Further, there is a case where the substrate peripheral portion is supported when the phase shift mask having the SOG as a coating film formed on the substrate surface is attached to the exposure apparatus. If it is raised, it will not be held well.

【0006】この様な問題点を解決するための技術とし
て、例えば、特公昭58−19350号公報に開示され
ている方法がある。
As a technique for solving such a problem, for example, there is a method disclosed in Japanese Patent Publication No. 58-19350.

【0007】この方法は、基板の被覆膜の周縁部に位置
する不要膜を除去液により溶解除去するものである。す
なわち、図8及び図9に示されるように、スピンチャッ
ク102に載置した基板111上の被覆膜113の周縁
部に位置する不要膜を除去する際、除去液の案内部材と
して中空のピラミッド形状のカバー103で基板表面の
主要部を覆い、基板111とカバー103とを一体に回
転させ、カバー103の上方からノズル104を通じて
除去液141を供給してカバー103の斜面を介して不
要膜部に供給し、基板111の不要膜を溶解除去するよ
うにしたものである。
According to this method, the unnecessary film located on the peripheral portion of the coating film on the substrate is dissolved and removed by a removing liquid. That is, as shown in FIGS. 8 and 9, a hollow pyramid is used as a guide member for the removal liquid when removing the unnecessary film located on the peripheral portion of the coating film 113 on the substrate 111 mounted on the spin chuck 102. The main part of the substrate surface is covered with the shaped cover 103, the substrate 111 and the cover 103 are integrally rotated, and the removing liquid 141 is supplied from above the cover 103 through the nozzle 104 to form the unnecessary film portion through the slope of the cover 103. And the unnecessary film on the substrate 111 is dissolved and removed.

【0008】[0008]

【発明が解決しようとする課題】しかしながら、上述の
方法においては、案内部材であるピラミッド形状のカバ
ーの斜面を流れて基板の不要膜除去域に供給される除去
液は、基板とカバーとの間に形成される間隙から侵入し
て基板中心方向に流れ込み、除去すべきでない基板の主
要膜部をも一部溶解するという問題があった。
However, in the above-mentioned method, the removing liquid which flows through the slope of the pyramid-shaped cover which is the guide member and is supplied to the unnecessary film removing region of the substrate is between the substrate and the cover. There is a problem in that the main film portion of the substrate, which should not be removed, is also partially dissolved by penetrating through the gap formed in the substrate and flowing toward the center of the substrate.

【0009】本発明は、上述の背景のもとでなされたも
のであり、比較的簡単な方法により不要膜のみを溶解除
去できる不要膜除去方法及びその装置並びにこの不要膜
除去方法を用いた位相シフトマスクブランクス製造方法
を提供することを目的としたものである。
The present invention has been made under the background described above, and is a method and apparatus for removing an unnecessary film capable of dissolving and removing only an unnecessary film by a relatively simple method, and a phase using the method for removing an unnecessary film. An object of the present invention is to provide a shift mask blank manufacturing method.

【0010】[0010]

【課題を解決するための手段】上述の課題を解決するた
めに本発明にかかる不要膜除去方法は、 (構成1) 基板の少なくとも表面周縁部に形成された
不要膜を除去する不要膜除去方法であって、少なくとも
基板表面周縁部近傍をカバー部材で覆って該カバー部材
と基板表面周縁部との間に間隙を形成し、かつ、前記カ
バー部材の外側から供給された不要膜除去液が少なくと
も前記基板表面周縁部の不要膜に至ることができる液体
流路を形成するとともに、前記間隙内に基板中心部方向
から外周部方向に向かう気流を形成して前記カバー部材
の外側から供給された不要膜除去液が基板中心部に向か
って侵入するのを阻止し、かつ、前記基板とカバー部材
とを一体にして回転することにより、前記除去液が少な
くとも基板表面周縁部の不要膜に供給されるようにして
該不要膜を溶解除去するようにしたことを特徴とする構
成とし、この構成1の態様として、 (構成2) 構成1の不要膜除去方法において、前記カ
バー部材は、基板表面周縁部及び側面部を覆って該基板
表面周縁部及び側面部との間に間隙を形成し、かつ、前
記基板周縁部近傍に、前記間隙内に不要膜除去液を導入
する液体導入口を備えたものであり、前記液体流路は、
前記基板表面周縁部及び側面部との間に形成された間隙
によって構成されたものであり、前記カバー部材の外側
から供給された不要膜除去液を前記液体導入口から導入
し、前記基板表面周縁部及び側面部との間に形成された
間隙により構成された液体流路を通過させる間に不要膜
を溶解除去するようにしたことを特徴とする構成とし
た。
In order to solve the above-mentioned problems, an unnecessary film removing method according to the present invention comprises: (Structure 1) An unnecessary film removing method for removing an unnecessary film formed on at least a peripheral portion of a surface of a substrate. In addition, at least the vicinity of the peripheral portion of the substrate surface is covered with a cover member to form a gap between the cover member and the peripheral portion of the substrate surface, and the unnecessary film removing liquid supplied from the outside of the cover member is at least A liquid flow path that can reach an unnecessary film at the peripheral portion of the substrate surface is formed, and an air flow is formed in the gap from the central portion of the substrate toward the outer peripheral portion to supply unnecessary liquid from the outside of the cover member. By preventing the film removing liquid from entering toward the central part of the substrate, and by rotating the substrate and the cover member integrally, the removing liquid becomes an unnecessary film at least at the peripheral portion of the substrate surface. A constitution is characterized in that the unnecessary film is dissolved and removed by being supplied. As a mode of the constitution 1, (constitution 2), in the unnecessary film removing method of constitution 1, the cover member is a substrate. A liquid introducing port is formed to cover the surface peripheral portion and the side surface portion and form a gap between the substrate surface peripheral portion and the side surface portion, and to introduce the unnecessary film removing liquid into the gap in the vicinity of the substrate peripheral portion. The liquid flow path is provided with
The substrate surface peripheral portion is formed by a gap formed between the substrate surface peripheral portion and the side surface portion, and the unnecessary film removing liquid supplied from the outside of the cover member is introduced from the liquid introduction port, The unnecessary film is dissolved and removed while passing through the liquid flow path constituted by the gap formed between the portion and the side surface portion.

【0011】また、本発明にかかる不要膜除去装置は、 (構成3) 基板の少なくとも表面周縁部及び側面部に
形成された不要膜を除去する不要膜除去装置であって、
少なくとも基板表面周縁部近傍を覆って基板表面周縁部
との間に間隙を形成するとともに、該間隙内に基板中心
部方向から外周部方向に向かう気流を形成するための気
体導入口を備えたカバー部材と、前記カバー部材に不要
膜除去液を供給する不要膜除去液供給装置と、前記基板
とカバー部材とを一体にして回転する回転装置とを有
し、前記基板とカバー部材とを一体にして回転すること
により、前記除去液が少なくとも基板表面周縁部及び側
面部の不要膜に供給されるようにして該不要膜を溶解除
去するようにしたことを特徴とする構成とし、この構成
3の態様として、 (構成4) 構成3の不要膜除去装置において、前記カ
バー部材は、前記基板表面周縁部及び側面部を覆って該
基板表面周縁部及び側面部との間に間隙を形成し、か
つ、前記基板周縁部近傍に、前記間隙内に不要膜除去液
を導入する液体導入口を備えたものであり、前記カバー
部材の外側から供給された不要膜除去液を前記液体導入
口から導入し、前記基板表面周縁部及び側面部との間に
形成された間隙を通過させる間に不要膜を溶解除去する
ようにしたことを特徴とする構成とした。
Further, the unnecessary film removing apparatus according to the present invention is (Structure 3) is an unnecessary film removing apparatus for removing an unnecessary film formed on at least a peripheral edge portion and a side surface portion of a substrate,
A cover that covers at least the vicinity of the peripheral portion of the substrate surface and forms a gap between the peripheral portion of the substrate surface and a gas inlet for forming an airflow in the gap from the central portion of the substrate toward the outer peripheral portion. A member, an unnecessary film removing liquid supply device that supplies an unnecessary film removing liquid to the cover member, and a rotating device that integrally rotates the substrate and the cover member, and integrates the substrate and the cover member. And removing the unwanted film by dissolving the unwanted solution at least in the peripheral portion and the side surface of the substrate surface by rotating the spinning solution. As an aspect, (Structure 4) In the unnecessary film removing apparatus of Structure 3, the cover member covers the substrate surface peripheral portion and the side surface portion and forms a gap between the substrate surface peripheral portion and the side surface portion, and , In the vicinity of the peripheral portion of the substrate, a liquid introducing port for introducing the unnecessary film removing liquid into the gap is provided, and the unnecessary film removing liquid supplied from the outside of the cover member is introduced from the liquid introducing port, An unnecessary film is dissolved and removed while passing through a gap formed between the peripheral portion and the side surface portion of the substrate surface.

【0012】さらに、本発明にかかる位相シフトマスク
ブランクス製造方法は、 (構成5) 透光性基板上に位相シフト層となる膜を形
成する工程を有する位相シフトマスクブランクス製造方
法において、前記膜を形成する工程において、不要な部
分に形成された膜を、請求項1及び2の記載の不要膜除
去方法で除去する工程を有することを特徴とした構成と
したものである。
Further, the method of manufacturing a phase shift mask blank according to the present invention is (Structure 5): In the method of manufacturing a phase shift mask blank, the method comprising the step of forming a film to be a phase shift layer on a transparent substrate. In the forming step, there is a step of removing the film formed in the unnecessary portion by the unnecessary film removing method according to the first and second aspects.

【0013】[0013]

【作用】上述の構成1によれば、少なくとも基板表面周
縁部近傍をカバー部材で覆って該カバー部材と基板表面
周縁部との間に間隙を形成し、かつ、前記間隙内に基板
中心部方向から外周部方向に向かう気流を形成して前記
カバー部材の外側から供給された不要膜除去液が基板中
心部に向かって侵入するのを阻止するようにしたので、
不要膜除去液が不要膜以外に達することを防止して、不
要膜のみを除去することを可能とする。
According to the above configuration 1, at least the vicinity of the peripheral portion of the substrate surface is covered with the cover member to form a gap between the cover member and the peripheral portion of the substrate surface, and the central portion of the substrate is directed toward the central portion of the substrate. Since an air flow is formed from the outer peripheral direction to prevent the unnecessary film removing liquid supplied from the outside of the cover member from entering toward the central portion of the substrate,
It is possible to prevent the unnecessary film removing liquid from reaching a portion other than the unnecessary film and remove only the unnecessary film.

【0014】構成2によれば、カバー部材として、基板
表面周縁部及び側面部を覆って該基板表面周縁部及び側
面部との間に間隙を形成し、かつ、前記基板周縁部近傍
に、前記間隙内に不要膜除去液を導入する液体導入口を
備えたものを用いて、基板表面周縁部及び側面部との間
に形成された間隙によって液体流路を形成し、カバー部
材の外側から供給された不要膜除去液を液体導入口から
導入し、上記液体流路を通過させる間に不要膜を溶解除
去するようにしたことにより、より確実に不要膜を除去
することを可能にしたものである。
According to the configuration 2, the cover member covers the peripheral edge portion and the side surface portion of the substrate to form a gap between the peripheral edge portion and the side surface portion of the substrate, and in the vicinity of the peripheral edge portion of the substrate, Using a liquid inlet that introduces the unnecessary film removing liquid into the gap, a liquid flow path is formed by the gap formed between the peripheral portion and the side surface of the substrate surface, and the liquid is supplied from the outside of the cover member. The unnecessary film removing liquid is introduced from the liquid introduction port, and the unnecessary film is dissolved and removed while passing through the liquid flow path, thereby making it possible to remove the unnecessary film more reliably. is there.

【0015】構成3及び4によれば、上記構成1及び2
の方法を実施できる装置を得ることができる。
According to the configurations 3 and 4, the above configurations 1 and 2
It is possible to obtain an apparatus capable of carrying out the method.

【0016】さらに構成5によれば、不要膜のみを確実
に除去して品質のよい位相シフトマスクブランクスを得
ることが可能となる。
Further, according to the constitution 5, only the unnecessary film can be surely removed and a high quality phase shift mask blank can be obtained.

【0017】[0017]

【実施例】図1は本発明の一実施例にかかる不要膜除去
装置の構成を示す断面図、図2は一実施例にかかる不要
膜除去装置の平面図、図3は一実施例にかかる不要膜除
去装置の斜視図、図4は図1の一部拡大図である。以
下、これらの図面を参照にしながら一実施例にかかる不
要膜除去方法及びその装置並びに位相シフトマスクブラ
ンクスを説明する。
1 is a sectional view showing the structure of an unnecessary film removing apparatus according to an embodiment of the present invention, FIG. 2 is a plan view of an unnecessary film removing apparatus according to one embodiment, and FIG. 3 is an embodiment. FIG. 4 is a partially enlarged view of FIG. 1 of the unnecessary film removing device. Hereinafter, an unnecessary film removing method, an apparatus therefor, and a phase shift mask blank according to an embodiment will be described with reference to these drawings.

【0018】図1において、符号1は位相シフトマスク
ブランクス、符号2はスピンチャック、符号3はカバー
部材、符号4は不要膜除去液噴出ノズル、符号41は不
要膜除去液である。
In FIG. 1, reference numeral 1 is a phase shift mask blank, reference numeral 2 is a spin chuck, reference numeral 3 is a cover member, reference numeral 4 is an unnecessary film removing liquid jet nozzle, and reference numeral 41 is an unnecessary film removing liquid.

【0019】この一実施例の装置は、スピンチャック2
の載置台21に位相シフトマスクブランクス1を載置
し、位相シフトマスクブランクス1の表面周縁部1a及
び側面部1bを覆って該位相シフトマスクブランクス1
の表面周縁部1a及び側面部1bとの間に間隙5を形成
するカバー部材3をスピンチャック2上に固定し、カバ
ー部材3の外側から供給された不要膜除去液41を、カ
バー部材3の液体導入口33から上記間隙5内に導入
し、一方、カバー部材3の内側に気体6を導入して、上
記間隙5内に位相シフトマスクブランクス1の中心部方
向から外周部方向に向かう気流を形成して上記カバー部
材3の外側から供給された不要膜除去液41が位相シフ
トマスクブランクス1の中心部に向かって侵入するのを
阻止し、かつ、位相シフトマスクブランクス1とカバー
部材3とを一体にして回転することにより、上記不要膜
除去液41が位相シフトマスクブランクス1の表面周縁
部1a及び側面部1bの不要膜に供給されるようにして
該不要膜を溶解除去するようにしたものである。
The apparatus according to this embodiment comprises a spin chuck 2
The phase shift mask blanks 1 is placed on the mounting table 21 of the above, and the phase shift mask blanks 1 are covered so as to cover the surface peripheral portion 1a and the side surface portions 1b.
The cover member 3 forming a gap 5 between the surface peripheral portion 1a and the side surface portion 1b is fixed on the spin chuck 2, and the unnecessary film removing liquid 41 supplied from the outside of the cover member 3 is supplied to the cover member 3. The gas 6 is introduced from the liquid introduction port 33 into the gap 5, while the gas 6 is introduced into the inside of the cover member 3 to generate an air flow in the gap 5 from the central portion of the phase shift mask blank 1 toward the outer peripheral portion. The unnecessary film removing liquid 41 formed and supplied from the outside of the cover member 3 is prevented from invading toward the center of the phase shift mask blanks 1, and the phase shift mask blanks 1 and the cover member 3 are separated from each other. By rotating integrally, the unnecessary film removing liquid 41 is supplied to the unnecessary films on the surface peripheral portion 1a and the side surface portion 1b of the phase shift mask blank 1 to dissolve and remove the unnecessary film. In which was to so that.

【0020】位相シフトマスクブランクス1は、合成石
英からなる透明基板(6インチ角、厚さ0.25イン
チ)11の上にクロム半透光膜(膜厚;210オングス
トローム、波長365nmに対する透過率;15%)1
2が形成され、この半透光膜12上にSOG膜(膜厚;
3700オングストローム)13が形成された構造であ
り、SOG膜13の基板周縁部1aに形成された不要膜
は基板外周端から基板中央部に向けて約2mm幅に形成
されているものである。なお、SOG膜13が周知の位
相シフトマスクの位相シフト層を構成するものであり、
位相シフトマスクブランクス1はこの位相シフトマスク
を製造する際の素材として用いられるものであって、そ
れ自体独立して取り引きの対象とされる場合も多い。
The phase shift mask blank 1 comprises a semitransparent chromium film (film thickness: 210 Å, wavelength 365 nm) on a transparent substrate (6 inch square, thickness 0.25 inch) 11 made of synthetic quartz; 15%) 1
2 is formed, and the SOG film (film thickness;
3700 angstrom) 13 is formed, and the unnecessary film formed on the substrate peripheral edge portion 1a of the SOG film 13 is formed to have a width of about 2 mm from the outer peripheral edge of the substrate toward the central portion of the substrate. The SOG film 13 constitutes a phase shift layer of a known phase shift mask,
The phase shift mask blanks 1 are used as a raw material when manufacturing this phase shift mask, and in many cases, the phase shift mask blanks 1 themselves are targeted for trade.

【0021】スピンチャック2は、位相シフトマスクブ
ランクス1を載置する載置台21が回転軸22によって
支持され、この回転軸を図示しないモータ等によって回
転駆動できるようになっており、いわゆる回転塗布法
(スピンコート法)に用いる装置である。
In the spin chuck 2, a mounting table 21 on which the phase shift mask blanks 1 are mounted is supported by a rotating shaft 22, and this rotating shaft can be rotationally driven by a motor or the like (not shown). This is an apparatus used for (spin coating method).

【0022】カバー部材3は、上部カバー部31と下部
カバー部32とからなる。上部カバー部31は、円錐面
体の頂部近傍を切断除去したような中空形状をなしたも
のであり、その上部開口部が気体導入口31aを構成す
る。また、下部カバー部32は、上部カバー部31から
連続して位相シフトマスクブランクス1の表面部及び側
面部に対向してこれらとの間に間隙5を形成するように
これらを覆うもので、平面視が、位相シフトマスクブラ
ンクス1の外形形状に略等しい正方形状をなしている。
また、下部カバー部33の基板11における周縁部1a
に対向する部位の略四角形状のラインに沿って、多数の
略長方形状をなした液体導入口33が形成されている。
この場合、隣接する液体導入口33の間にはそれぞれ接
続部33aが形成されている。カバー部材3は、外周部
の4カ所に取付けられた支持体34によってスピンチャ
ック2の載置台21上に固定される。この実施例では、
上部カバー部31の気体導入口31aの内径を約110
mmφ、下端部の内径を約140mmφ、高さを約40
mmとした。また、下部カバー部32の外形を示す平面
視正方形の一辺を約160mmとし、かつ、各液体導入
口33は、一辺の長さを約146mmの四角形状のライ
ンにその内側辺が接するように配列して形成し、その幅
を約5mmとした。さらに、間隙5のカバー部材3と基
板1との距離を約2mmとした。
The cover member 3 comprises an upper cover portion 31 and a lower cover portion 32. The upper cover portion 31 has a hollow shape such that the vicinity of the top of the conical body is cut and removed, and its upper opening portion constitutes the gas introduction port 31a. In addition, the lower cover part 32 continuously faces the upper cover part 31 and faces the surface part and the side surface part of the phase shift mask blanks 1 to cover them so as to form a gap 5 therebetween. The appearance is a square shape that is substantially the same as the outer shape of the phase shift mask blank 1.
In addition, the peripheral edge portion 1a of the lower cover portion 33 on the substrate 11
A large number of liquid inlets 33 having a substantially rectangular shape are formed along the substantially quadrangular line of the part facing each other.
In this case, the connection portions 33a are formed between the adjacent liquid introduction ports 33, respectively. The cover member 3 is fixed on the mounting table 21 of the spin chuck 2 by the support bodies 34 attached to the outer peripheral portion at four positions. In this example,
The inner diameter of the gas inlet 31a of the upper cover portion 31 is set to about 110
mmφ, inner diameter of the lower end is about 140 mmφ, height is about 40
mm. Further, one side of a square in a plan view showing the outer shape of the lower cover part 32 is set to about 160 mm, and each liquid introduction port 33 is arranged so that its inner side is in contact with a quadrangular line having a side length of about 146 mm. The width was about 5 mm. Further, the distance between the cover member 3 and the substrate 1 in the gap 5 is set to about 2 mm.

【0023】不要膜除去液噴出ノズル4は、図示しない
不要膜除去液供給装置から供給された不要膜除去液41
を上記カバー部材3の上部カバー部31の外側に噴出さ
せるものである。
The unnecessary film removing liquid jet nozzle 4 is provided with an unnecessary film removing liquid 41 supplied from an unnecessary film removing liquid supply device (not shown).
Is ejected to the outside of the upper cover portion 31 of the cover member 3.

【0024】次に、上述の構成の装置を用いて位相シフ
トマスクブランクス1のSOG膜13(位相シフト膜)
の不要膜を除去した例を説明する。
Next, the SOG film 13 (phase shift film) of the phase shift mask blank 1 is formed by using the apparatus having the above-mentioned structure.
An example in which the unnecessary film is removed will be described.

【0025】まず、位相シフトマスクブランクス1をス
ピンチャック2の載置台21上に載置し、この上を覆う
ようにカバー部材3を載置台21に固定する。
First, the phase shift mask blanks 1 is placed on the mounting table 21 of the spin chuck 2, and the cover member 3 is fixed to the mounting table 21 so as to cover it.

【0026】次に、カバー部材3の気体導入口31aか
ら、流速1m/秒程度の空気6を供給する。
Next, the air 6 having a flow rate of about 1 m / sec is supplied from the gas inlet 31a of the cover member 3.

【0027】次に、スピンチャック2のよって、位相シ
フトマスクブランクス1とカバー部材3とを一体にして
100rpmで回転させながら、不要膜除去液41とし
て、イソプロピルアルコールを、不要膜除去液噴出ノズ
ル4から上部カバー部31の外側にした向きに噴出させ
る。このときの噴出流速を約60cc/分、噴出時間を
約10秒間とする。これにより、不要膜除去液41は、
回転作用により上部カバー部31の斜面全体に拡がりな
がら斜面を流下し、液体導入口33を通じて間隙5内に
導入され、この間隙5内を通って外部に排出される間
に、基板11の表面周縁部1a及び側面部1bに形成さ
れた不要膜を溶解して除去する。
Next, while the phase shift mask blanks 1 and the cover member 3 are integrally rotated by the spin chuck 2 at 100 rpm, isopropyl alcohol is used as the unnecessary film removing liquid 41, and the unnecessary film removing liquid jet nozzle 4 is used. From the upper cover portion 31 toward the outside. The jet flow velocity at this time is about 60 cc / min, and the jet time is about 10 seconds. Thereby, the unnecessary film removing liquid 41 is
By the rotating action, it spreads over the entire slope of the upper cover portion 31, flows down the slope, is introduced into the gap 5 through the liquid introduction port 33, and is discharged to the outside through the gap 5, while the surface peripheral edge of the substrate 11 is being discharged. The unnecessary film formed on the portion 1a and the side surface portion 1b is dissolved and removed.

【0028】次いで、不要膜除去液41の供給を停止し
て約2秒程度経過した後に、気体導入口31からの空気
の供給を停止し、その後、1000rpmで15秒間基
板11を回転させ、不要膜除去域の乾燥を行う。
Next, after about 2 seconds have passed since the supply of the unnecessary film removing liquid 41 was stopped, the supply of air from the gas inlet 31 was stopped, and then the substrate 11 was rotated at 1000 rpm for 15 seconds to eliminate the need. Dry the film removal area.

【0029】これにより、基板11の中心部への除去液
の侵入がなく、周縁部1aに形成されていた2mm幅の
不要膜及び基板側面部1bに形成された不要膜が完全に
除去されて、不要な箇所のSOG膜が完全に除去された
位相シフトマスクブランクスを得ることができた。
As a result, the removing liquid does not enter the central portion of the substrate 11 and the unnecessary film having a width of 2 mm formed on the peripheral edge portion 1a and the unnecessary film formed on the side surface portion 1b of the substrate are completely removed. Thus, it was possible to obtain a phase shift mask blank in which the SOG film in an unnecessary portion was completely removed.

【0030】なお、上述の一実施例では、位相シフトマ
スクブランクスの不要なSOG膜を除去する例について
述べたが、本発明はこれに限られるものではなく、基板
上の周縁部及び側面部に形成された他の不要膜、例え
ば、レジスト塗布膜や遮光膜を除去する場合にも適用で
きる。
In the above-mentioned one embodiment, the example of removing the unnecessary SOG film of the phase shift mask blanks has been described, but the present invention is not limited to this, and the peripheral edge portion and the side surface portion on the substrate are not limited to this. It can also be applied to the case of removing other unnecessary films formed, for example, a resist coating film or a light shielding film.

【0031】また、位相シフトマスクブランクスに限ら
れるものではなく、周縁部に不要膜を有する基板、例え
ば、カラーフィルター基板、磁気ディスク基板などにも
適用できることは勿論である。
Further, the present invention is not limited to the phase shift mask blanks, and it is needless to say that the present invention can be applied to a substrate having an unnecessary film on its peripheral portion, such as a color filter substrate or a magnetic disk substrate.

【0032】さらに、不要膜除去液としては、除去対象
たる不要膜と相溶する溶液であればよく、例えば、不要
膜がSOG塗布膜においては、アセトン、イソプロピル
アルコール、アルカリ水溶液等を用いる。また、不要膜
がレジスト塗布膜の場合には、ケトン、エステル、芳香
族炭化水素などの液体を用いることができる。
Further, the unnecessary film removing liquid may be any solution that is compatible with the unnecessary film to be removed. For example, when the unnecessary film is an SOG coating film, acetone, isopropyl alcohol, alkaline aqueous solution or the like is used. Further, when the unnecessary film is a resist coating film, a liquid such as ketone, ester, aromatic hydrocarbon can be used.

【0033】また、カバー部材の形状は、上記実施例の
形状に限らず、不要膜除去液が流下する傾斜外壁面を有
するカバーであって、上部に気体導入口を備え、また、
所望の基板周縁部及び基板側面部との間に間隙空間を形
成し、かつ、所望の不要膜除去域に不要膜除去液を供給
できる構造であれば、いかなる形状であっても構わな
い。気体も、空気以外に、窒素、ヘリウム等の不活性ガ
スその他のガスを用いてもよい。
Further, the shape of the cover member is not limited to the shape of the above-mentioned embodiment, and it is a cover having an inclined outer wall surface through which the unnecessary film removing liquid flows down, and is provided with a gas introduction port at the upper part,
Any shape may be used as long as a gap space is formed between the desired peripheral portion of the substrate and the side surface of the substrate and the unnecessary film removing liquid can be supplied to the desired unnecessary film removing region. As the gas, other than air, an inert gas such as nitrogen or helium or other gas may be used.

【0034】[0034]

【発明の効果】以上詳述したように、本発明にかかる不
要膜除去方法及びその装置並びに位相シフトマスクブラ
ンクス製造方法によれば、少なくとも基板表面周縁部近
傍をカバー部材で覆って該カバー部材と基板表面周縁部
との間に間隙を形成し、かつ、前記間隙内に基板中心部
方向から外周部方向に向かう気流を形成して前記カバー
部材の外側から供給された不要膜除去液が基板中心部に
向かって侵入するのを阻止するようにしたので、不要膜
除去液が不要膜以外に達することを防止して、不要膜の
みを確実に除去することが可能となり、また、これによ
り、品質のよい位相シフトマスクブランクスを得ること
が可能となる。
As described above in detail, according to the method for removing an unnecessary film, the apparatus therefor, and the method for manufacturing a phase shift mask blank according to the present invention, at least the vicinity of the peripheral portion of the substrate surface is covered with a cover member. A gap is formed between the peripheral surface of the substrate surface and an air flow from the central portion of the substrate toward the outer peripheral portion is formed in the gap so that the unnecessary film removing liquid supplied from the outside of the cover member is central to the substrate. Since it is prevented from invading toward the part, it is possible to prevent the unnecessary film removing liquid from reaching a portion other than the unnecessary film, and it is possible to reliably remove only the unnecessary film. It is possible to obtain a good phase shift mask blank.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例にかかる不要膜除去装置の構
成を示す断面図である。
FIG. 1 is a sectional view showing a configuration of an unnecessary film removing device according to an embodiment of the present invention.

【図2】一実施例にかかる不要膜除去装置の平面図であ
る。
FIG. 2 is a plan view of an unnecessary film removing device according to an embodiment.

【図3】一実施例にかかる不要膜除去装置の斜視図であ
る。
FIG. 3 is a perspective view of an unnecessary film removing device according to an embodiment.

【図4】図1の一部拡大図である。FIG. 4 is a partially enlarged view of FIG.

【図5】不要膜の説明図である。FIG. 5 is an explanatory diagram of an unnecessary film.

【図6】図5のXーX線断面図である。6 is a sectional view taken along line XX of FIG.

【図7】不要膜が剥離した状態を示す説明図である。FIG. 7 is an explanatory diagram showing a state in which an unnecessary film is peeled off.

【図8】従来の不要膜除去装置の説明図である。FIG. 8 is an explanatory diagram of a conventional unnecessary film removing device.

【図9】従来の不要膜除去装置の説明図である。FIG. 9 is an explanatory diagram of a conventional unnecessary film removing device.

【符号の説明】[Explanation of symbols]

1…位相シフトマスクブランクス、11…基板、12…
半透光膜、13…SOG膜、2…スピンチャック、21
載置台、22…回転軸、3…カバー部材、31…上部カ
バー部、31a…気体導入口、32…下部カバー部、3
3…液体導入口、4…不要膜除去液噴出ノズル、41…
不要膜除去液、5…間隙、6…気体。
1 ... Phase shift mask blanks, 11 ... Substrate, 12 ...
Semi-transparent film, 13 ... SOG film, 2 ... Spin chuck, 21
Mounting table, 22 ... Rotating shaft, 3 ... Cover member, 31 ... Upper cover part, 31a ... Gas inlet port, 32 ... Lower cover part, 3
3 ... Liquid introducing port, 4 ... Unwanted film removing liquid ejection nozzle, 41 ...
Unnecessary film removing liquid, 5 ... gap, 6 ... gas.

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】 基板の少なくとも表面周縁部に形成され
た不要膜を除去する不要膜除去方法であって、 少なくとも基板表面周縁部近傍をカバー部材で覆って該
カバー部材と基板表面周縁部との間に間隙を形成し、か
つ、前記カバー部材の外側から供給された不要膜除去液
が少なくとも前記基板表面周縁の不要膜に至ることがで
きる液体流路を形成するとともに、前記間隙内に基板中
心部方向から外周部方向に向かう気流を形成して前記カ
バー部材の外側から供給された不要膜除去液が基板中心
部に向かって侵入するのを阻止し、かつ、前記基板とカ
バー部材とを一体にして回転することにより、前記除去
液が少なくとも基板表面周縁部の不要膜に供給されるよ
うにして該不要膜を溶解除去するようにしたことを特徴
とする不要膜除去方法。
1. A method for removing an unnecessary film formed on at least a peripheral portion of a surface of a substrate, comprising: covering at least a peripheral portion of the substrate surface with a cover member; A gap is formed between the cover member and the unnecessary film removing liquid supplied from the outside of the cover member to form a liquid flow path that can reach at least the unnecessary film on the peripheral edge of the substrate surface. An air flow is formed from the part direction toward the outer peripheral part to prevent the unnecessary film removing liquid supplied from the outside of the cover member from entering toward the center part of the substrate, and the substrate and the cover member are integrated. The unnecessary film removing method is characterized in that the removing liquid is supplied to at least the unnecessary film on the peripheral portion of the substrate surface to dissolve and remove the unnecessary film by being rotated.
【請求項2】 請求項1に記載の不要膜除去方法におい
て、 前記カバー部材は、基板表面周縁部及び側面部を覆って
該基板表面周縁部及び側面部との間に間隙を形成し、か
つ、前記基板周縁部近傍に、前記間隙内に不要膜除去液
を導入する液体導入口を備えたものであり、 前記液体流路は、前記基板表面周縁部及び側面部との間
に形成された間隙によって構成されたものであり、 前記カバー部材の外側から供給された不要膜除去液を前
記液体導入口から導入し、前記基板表面周縁部及び側面
部との間に形成された間隙により構成された液体流路を
通過させる間に不要膜を溶解除去するようにしたことを
特徴とする不要膜除去方法。
2. The unnecessary film removing method according to claim 1, wherein the cover member covers the substrate surface peripheral portion and the side surface portion and forms a gap between the substrate surface peripheral portion and the side surface portion, and A liquid introduction port for introducing an unnecessary film removing liquid into the gap is provided in the vicinity of the substrate peripheral portion, and the liquid flow channel is formed between the substrate surface peripheral portion and the side surface portion. A gap formed between the substrate surface peripheral portion and the side surface portion by introducing the unnecessary film removing liquid supplied from the outside of the cover member from the liquid introduction port. A method for removing an unnecessary film, characterized in that the unnecessary film is dissolved and removed while passing through the liquid flow path.
【請求項3】 基板の少なくとも表面周縁部に形成され
た不要膜を除去する不要膜除去装置であって、 少なくとも基板表面周縁部近傍を覆って基板表面周縁部
との間に間隙を形成するとともに、該間隙内に基板中心
部方向から外周部方向に向かう気流を形成するための気
体導入口を備えたカバー部材と、 前記カバー部材に不要膜除去液を供給する不要膜除去液
供給装置と、 前記基板とカバー部材とを一体にして回転する回転装置
とを有し、 前記基板とカバー部材とを一体にして回転することによ
り、前記除去液が少なくとも基板表面周縁部の不要膜に
供給されるようにして該不要膜を溶解除去するようにし
たことを特徴とする不要膜除去装置。
3. An unnecessary film removing device for removing an unnecessary film formed on at least a peripheral portion of a surface of a substrate, wherein at least a vicinity of the peripheral portion of the substrate surface is covered and a gap is formed between the peripheral portion and the peripheral surface of the substrate. A cover member provided with a gas introduction port for forming an airflow in the gap from the substrate center direction toward the outer peripheral direction, and an unnecessary film removal liquid supply device for supplying an unnecessary film removal liquid to the cover member, A rotation device that integrally rotates the substrate and the cover member is provided, and the removal liquid is supplied to at least the unnecessary film at the peripheral portion of the substrate surface by rotating the substrate and the cover member integrally. An unnecessary film removing device characterized in that the unnecessary film is dissolved and removed in this manner.
【請求項4】 請求項3に記載の不要膜除去装置におい
て、 前記カバー部材は、前記基板表面周縁部及び側面部を覆
って該基板表面周縁部及び側面部との間に間隙を形成
し、かつ、前記基板周縁部近傍に、前記間隙内に不要膜
除去液を導入する液体導入口を備えたものであり、 前記カバー部材の外側から供給された不要膜除去液を前
記液体導入口から導入し、前記基板表面周縁部及び側面
部との間に形成された間隙を通過させる間に不要膜を溶
解除去するようにしたことを特徴とする不要膜除去装
置。
4. The unnecessary film removing apparatus according to claim 3, wherein the cover member covers the substrate surface peripheral portion and the side surface portion to form a gap between the substrate surface peripheral portion and the side surface portion, Further, in the vicinity of the substrate peripheral portion, a liquid introduction port for introducing the unnecessary film removing liquid into the gap is provided, and the unnecessary film removing liquid supplied from the outside of the cover member is introduced from the liquid introducing port. The unnecessary film removing device is characterized in that the unnecessary film is dissolved and removed while passing through a gap formed between the peripheral edge portion and the side surface portion of the substrate.
【請求項5】 透光性基板上に位相シフト層となる膜を
形成する工程を有する位相シフトマスクブランクス製造
方法において、 前記膜を形成する工程において、不要な部分に形成され
た膜を、請求項1及び2の記載の不要膜除去方法で除去
する工程を有することを特徴とした位相シフトマスクブ
ランクス製造方法。
5. A method of manufacturing a phase shift mask blank comprising a step of forming a film to be a phase shift layer on a transparent substrate, wherein in the step of forming the film, a film formed in an unnecessary portion is formed. A method of manufacturing a phase shift mask blank, comprising a step of removing by the unnecessary film removing method according to the items 1 and 2.
JP16529093A 1993-07-05 1993-07-05 Method and apparatus for removing unnecessary film and method for manufacturing phase shift mask blanks Expired - Fee Related JP3345468B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16529093A JP3345468B2 (en) 1993-07-05 1993-07-05 Method and apparatus for removing unnecessary film and method for manufacturing phase shift mask blanks

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16529093A JP3345468B2 (en) 1993-07-05 1993-07-05 Method and apparatus for removing unnecessary film and method for manufacturing phase shift mask blanks

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030051198A (en) * 2001-09-28 2003-06-25 호야 가부시키가이샤 Method of manufacturing a mask blank and a mask, the mask blank and the mask, and useless film removing method and apparatus
US6733686B2 (en) 2000-03-15 2004-05-11 Hoya Corporation Method and device for removing an unnecessary film
WO2004088420A1 (en) * 2003-03-31 2004-10-14 Hoya Corporation Method for producing mask blank and method for producing transfer mask
US6939807B2 (en) * 2002-10-17 2005-09-06 Semes Co., Ltd. Apparatus for manufacturing semiconductor devices with a moveable shield
WO2005085950A1 (en) * 2004-03-05 2005-09-15 Hoya Corporation Method of manufacturing photomask blank
JP2015111312A (en) * 2003-09-29 2015-06-18 Hoya株式会社 Mask blank and method for manufacturing transfer mask

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6733686B2 (en) 2000-03-15 2004-05-11 Hoya Corporation Method and device for removing an unnecessary film
KR20030051198A (en) * 2001-09-28 2003-06-25 호야 가부시키가이샤 Method of manufacturing a mask blank and a mask, the mask blank and the mask, and useless film removing method and apparatus
US7226705B2 (en) 2001-09-28 2007-06-05 Hoya Corporation Method of manufacturing a mask blank and a mask, the mask blank and the mask, and useless film removing method and apparatus
US6939807B2 (en) * 2002-10-17 2005-09-06 Semes Co., Ltd. Apparatus for manufacturing semiconductor devices with a moveable shield
WO2004088420A1 (en) * 2003-03-31 2004-10-14 Hoya Corporation Method for producing mask blank and method for producing transfer mask
US7354860B2 (en) 2003-03-31 2008-04-08 Hoya Corporation Manufacturing method of mask blank and manufacturing method of transfer mask
JP2015111312A (en) * 2003-09-29 2015-06-18 Hoya株式会社 Mask blank and method for manufacturing transfer mask
WO2005085950A1 (en) * 2004-03-05 2005-09-15 Hoya Corporation Method of manufacturing photomask blank

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