JPH07202273A - Manufacture of semiconductor electric heat film - Google Patents

Abstract

PURPOSE: To form an exothermic thin film of thickness in a specific range with a coating of atomization growth for shorter heating period by preparing a material with the amount of admixture as a weight in a specific range, material-mixing the material and medium to the weight in a specific range, and further, treating the material at a temperature in a specific range for a specific period. CONSTITUTION: With a metal compound as main constituent, its mount is material-prepared (10) by a weight of 1-10%, using such compound as antimony of appropriate amount as an admixture during the manufacturing process. Then the material is evenly agitated, mixed with a medium such as water, so that material is mixed by a weight of 20-60% in amount. Meanwhile, a base material 12 quartz or the like is washed, dried, and hated, and it is left in a stove at a high temperature of 400-850 deg.C for 10-30 minutes. Lastly, atomization growth (13) is allowed to conducted to a coating thickness of 3-300 μ, and a semiconductive-type exothermic thin film is formed, as one body, together with the base material. Thus, heating is performed quickly to realize effect of saving of electricity.

Description

Detailed Description of the Invention

[0001]

[Field of Industrial Application] The production method of the present invention is mainly applied to a general metal compound such as gold, silver, indium, tin or the like, or an organic compound, phosphide, sulfide, selenide, etc. After preliminarily mixing with a medium such as methyl alcohol, ethyl alcohol, hydrochloric acid, etc., the basic material that has been further cleaned and dried is left in the stove to activate the surface of the basic material, and then the above fluid is added to the basic material. Gushing into the stove of
The ejected fluid instantaneously generates a high temperature to cause an oxidation-reduction action of atomization decomposition and form ions at charged positions to be evenly attached to the surface or directly to the surface of the basic material for activation. It spouts and instantaneously generates a redox action to directly form one semiconductor electrothermal film on the surface of the basic material.

Further, the present invention mainly uses a low expansion coefficient material such as quartz, glass, porcelain clay, mica, etc. after a metal compound is mixed with a medium material such as water, methyl alcohol, hydrochloric acid, ethyl alcohol and melted. After being combined with the base material surface to be manufactured and first heated for activation, the compounded liquid compound material is jetted into the stove or directly onto the base material surface to rapidly atomize the fluid by high temperature. After the decomposition by isomerization, redox action is generated,
In combination with the activation treatment of the surface of the basic material, it relates to a manufacturing method in which it naturally forms a further electric heating film so that it adheres and grows evenly on the surface of the basic material.

[0003]

2. Description of the Related Art Conventionally, this type of electrothermal heating system is generally constructed by winding a resistance wire into a resistance wire electric heater or a positive temperature coefficent heater and generating resistance after energization to convert it into electrothermal energy. To do
It is used as the main heating member, but it is difficult to wind the resistance wire, and the material of the resistance wire cannot be easily obtained, so the cost is also high, and the manufacturing and assembly costs are not the same. Of. Moreover, when it is energized, all of them produce bright red light, not only the maximum consumption of electricity, but also stains in the room, where if high temperature is used for a certain period of time, it easily oxidizes. And always trouble people.

According to a general positive temperate coefficient heater (PTC), the temperature at which it receives the heat is not so high that it is usually around 250 ° C. Because the change is large and the materials are also high, the rate of non-defective products is low,
Since the cost of the production equipment is higher, and it is not possible to manufacture a large area heating member there, only small pieces are manufactured and mounted in a parallel manner, which wastes work, time and cost, It does not comply with the economic principle of.
In addition, when used, it is difficult to design the change in current and cannot be directly connected to the container that receives heat, so that the overall thermal effect is reduced and the heating time is extended. In addition, the electric wires and the like connected to each other must be made thicker or designed with a relatively large load, which inevitably leads to an increase in the assembling cost. Moreover, its shape is also limited, and the design of the molding is difficult, which also cannot significantly improve the production and sale of general electric heating elements, so how does it generate a kind of high temperature? In order to save electricity by providing high heat generation efficiency with no bright light, and to develop a safe one, at the same time, it is possible for the subcontractors to proactively develop an electric heating member that lowers the manufacturing and use costs. It is a goal to develop.

[0005]

Accordingly, the present invention is
A metal compound such as silver, indium, tin, vanadium, etc., or an organic compound, selenide, phosphide, sulfide, etc. as a main component and a medium such as water, methyl alcohol, ethyl alcohol, ethylamine, triethylamine, hydrochloric acid, etc. By mixing it uniformly with one liquid compound at a suitable time, and adding antimony and iron compound or fluoride in a constant proportion in a timely manner as a mixture, and further, the basic material to be coated is cleaned and dried, and then subjected to high temperature and waste. Put it in a stove and heat it, and when the temperature reaches a high temperature of 400-800 ° C, heat the constant temperature for about 5-10 minutes to keep the temperature,
Heat the surface to activate it (decide after seeing the basic material, if glass is about 600 ° C
The temperature is set to 00 ° C), and the compounded material is jetted into the stove, and then momentarily decomposed into atomization to become charged ions and coat the surface of the basic material after the activation, thereby naturally A thin film is formed on the
It lies between 300μ, which is the main object of the present invention to transform the manpower required for use into a large and small disparate choice.

[0006]

In order to achieve the above object, the method for manufacturing a semiconductor electrothermal film of the present invention is such that the surface of the basic material directly exposed to heat by the exothermic film is uniformly jetted and coated. The shape of the basic material is a general glass, a kettle of ceramics, or a heating member of any shape, such as a tubular, cellular, flat plate ... There is no need to go through, that is, there is no loss of heat transfer, so that the efficiency of heating is greatly increased, and the effect of shortening the heating time and saving electricity is achieved.

[0007]

In view of the above-mentioned drawbacks, the present invention has obtained tests and researches and created a kind of semiconductor electrothermal film of the present invention. It was prepared by directly mixing a metal compound and a medium in a constant proportion, and Oxidation-reduction of atomization decomposes into charged ions, naturally combined with the process of adhering and growing, and directly adhering it to the surface of the basic material to be coated to form a single exothermic thin film. Molecules are heated by activation and bound to the exothermic membrane by a molecular dissociation form, and their physicochemical efficacy becomes very stable, and they are subjected to electric current to generate a thermal effect, and evenly and rapidly heated. it can.

[0008]

Other objects and advantages of the present invention will become more apparent by the detailed description based on the combined display of the drawings. The special structure and its technical means and features used to achieve the above-described designing purpose of the present invention will be described in detail as follows in combination with the drawings.

The manufacturing method of the semiconductor electrothermal film of the present invention includes the following steps as the whole manufacturing process: raw material preparation 10, material preparation 11, basic material cooking 12, high temperature atomization growth 13, etc. Is the process of. In the 10th stage of raw material preparation of the heating film, it is mainly gold, silver, indium,
Mainly metal compounds such as molybdenum, vanadium, tin, cadmium, etc. or organic compounds, selenides, phosphides, sulfides, etc. Among them, tin compounds are easily obtained and the cost is very low. As the main raw material, the oxide itself is not conductive, but if a certain amount of admixture is added, it will become a semiconductor, so if an appropriate amount of compounds such as antimony, iron, fluorine ... It becomes a mixture and is used to modify its conductivity by adjusting the added amount to a weight between 1% and 10%, and its resistance is adjusted to produce heat energy when it is made into a product.

In the eleventh step of preparing the material, the above compounds are uniformly prepared with a medium according to a certain proportion, and are evenly mixed through stirring, and the materials for the medium are water, methyl alcohol, ethyl alcohol, hydrochloric acid, The amount of ethylamine, triethylamine, etc. mixed is 20% to 60%
And the weight. Mix it evenly into one fluid,
In addition, the impurities contained therein are removed through an appropriate filtration treatment.

In the basic material cooking step 12, the basic material to be coated is a molded member that receives various kinds of heat, such as a member having a tubular shape or a flat plate shape, or a member having a cell-like shape shown in FIG. The basic material is a low expansion coefficient material such as quartz, glass, magnetic clay, mica, or other plastic that can withstand high temperatures.When operating it, first check the appearance to ensure that it has a perfect appearance, and further purify it. The surface (coated surface) is washed with soft water, diluted hydrochloric acid, etc., and dried by an appropriate method.

The 13 stages of high temperature atomization growth are:
Appropriately clean the heated basic material, leave it in a high temperature stove, and heat it to a high temperature of 400 to 800 ° C for 5
In order to maintain a constant temperature for 10 minutes, the phenomenon of activation was generated on the surface of the base material, and a liquid material appropriately prepared according to the present invention was jetted into the high temperature stove in a fixed amount mixed with air, Using an air compressor, the relatively good air pressure was set to 2.0 kg / cm ^3, and due to the high temperature characteristics inside, the fluid of the conductive material was ejected and immediately decomposed (oxidized and reduced) into atomization. As it becomes mist-like charged ions and coats the surface of the basic material, it also makes it a kind of natural growth phenomenon depending on the time of atomization growth and the number of ejected materials, and its coating thickness is When a thin film having a thickness of about 3 μ to 300 μ is grown (selected according to actual needs), a metal thin film of a semiconductor is formed to be evenly coated on the surface of the basic material, and at a suitable position on the surface of the basic material. As in the ring side of a cellular member as shown in FIG. 3, a guayule 21 (having a heat-resistant temperature of 850 ° C. or higher and a resistivity of 0.3 Ω or lower) that withstands high temperatures is provided in a ring shape and is used for energization. The object of generating thermal energy is achieved by the resistance of the metal thin film of the semiconductor, after being supplied to the manufacture of the above, and being supplied with electricity by the metal thin film of the semiconductor.

A general atomization time is about 1
It is set for 0 to 30 minutes, and its height varies depending on the thickness of the attached thin film surface and the heating rate during manufacturing, and when taken out from the stove of the basic material to be coated appropriately, the surface of the basic material is slightly streaked. Since the thin film remains, the current consumed for the entire energization is very small, and moreover, heat energy is conducted from the outside to the inside, so there is no danger of explosion due to the large difference between the inside and outside temperatures (generally The PTC product used has the property of receiving heat from the inside to the outside, where the difference between the inside and outside temperatures is so large that a rupture occurs, and it reaches the effect of relatively saving electricity.
After the temperature test, the maximum temperature reaches 700 ℃ and does not emit bright light up to 500 ℃, but
When the temperature within 00 ° C is used, the function of each term does not change, so that the electric energy can be saved to about 30% or more, and it has a very good industrial utility value.

The following will further describe the characteristics of the actual product of the present invention in combination with one embodiment of a slight actual production. First, about 100 g of tin compound / antimony compound 2 g / hydrochloric acid of 10 cc and 50 cc of water are mixed evenly, and then combined with the processes of the production steps of the present invention as described above, as shown in the present invention immediately. If a semiconductor heat-generating film product is made, and the temperature of heat generation required for actual use is adjusted appropriately and mixed at a blending ratio that actually limits, the product of the required semiconductor heat-generating film will be obtained. If you test the heat-generating film obtained in this way,
It has about 20 to 30 Ω / mouth and also has the high temperature characteristics of its resistance wire and the characteristics of a positive temperature coefficent, the test of which is shown in FIGS.

[0015]

When the semiconductor electrothermal film provided in the present invention is derived from the above description, it clearly has the following features: The semiconductor raw material of the heat generating film is a liquid, and when the basic material is selected, the heat generating member is directly blown out according to actual needs, and it is also suitable for heating a member having an unregulated shape.

2. Since the raw material of the present invention uses a general metal compound and a chemical solvent which can be easily obtained, the manufacturing cost thereof is 50% lower than that of a general electric heating coil, so that the production is economically coded. 3. Since the heating surface and the basic material that receives heat are integrated, there is almost no heat resistance of air, and the heating speed becomes very fast, and it is possible to obtain a thermal efficiency of 90% or more by testing it (generally used Is about 40% to 60%
It has the effect of further saving electricity and achieves the purpose of easily adjusting the control of the operation by proportioning or coating thickness compounded according to the actual use needs, and No restrictions.

4. The cost of investment in the manufacturing equipment is very low, the cost of the equipment is very low, only a high temperature stove is required for the metal compound and the chemical solvent, and the cost is high and the cost is high. 5. The thin films formed are all metal oxides and metal ions, which are difficult to oxidize when used, stably maintain product quality, and effectively extend the service life.

6. Since the product has low thermal inertia after heating and has a very fast cooling rate, it is free from the risk of burns, secures the safety of use, and is suitable for the production of precision heat-generating members that are generally used. 7. The heat energy of the product of the present invention is 80% higher than that of infrared light when compared with the infrared heat energy and the radiant heat energy, and the product combining it with the display of FIG. If it is used in combination with a transparent basic material such as glass, it has a function of producing a transparent heat generating film and at the same time reflecting infrared rays.

Further, the present invention has completed a test, and the test method is as shown in FIG. 2, in which a power source is connected to the electrode plates 20 at both ends of the product so that when the power is turned on, the heat is immediately and quickly maintained. , Its heating speed becomes very fast, 30
When heated for a second, the temperature reaches 500 ° C. left and right without bright light, and the fact that the speed is high and the temperature is high makes ordinary electric heating products incomparable to the products of the present invention. The consumption of electric current is also extremely low, which is about half or more that of a general electric heating coil. Its rationalization performance is very good, its melting point reaches 1500 ° C., and its hardness reaches Morse of 8 degrees, which is the same as that of quartz. Further, even if it penetrates into a solution of concentrated nitric acid, hydrochloric acid and 20% sodium for 24 hours, the function of the whole product does not change.

Summarizing the above, the method for manufacturing a semiconductor electrothermal film of the present invention has the use effect of speeding up the heating and saving electricity, and further has the economic benefit of also lowering the investment and production costs. In fact, it is an invention to manufacture a new heating member that is highly useful in one industry.

[Brief description of drawings]

FIG. 1 is a diagram simply showing a production stage of the present invention.

FIG. 2 is a test plane explanatory view of a sample of the present invention.

FIG. 3 is a structural appearance reference diagram of a cellular sample of the present invention.

FIG. 4 is a test diagram of the output and temperature relationship of the present invention.

FIG. 5 is a test diagram for increasing the temperature according to the present invention.

FIG. 6 is a test curve diagram where the product of the invention is superior to infrared.

[Explanation of symbols]

 10 Raw Material Preparation 11 Material Preparation 12 Basic Material Cooking 13 Atomization Growth 20 Electrode Plate 21 Guael

Claims (2)

[Claims] 1. Mainly metal compounds such as gold, silver, indium, tin, vanadium, etc. or organic compounds, selenides, phosphides, sulfides, etc., and an appropriate amount of antimony, iron, fluorine during the manufacturing process. And other compounds as admixtures, the amount of which is 1% to 10% by weight in the raw material preparation step, the above raw materials are evenly stirred, and the material used as the medium is water / methyl alcohol A material blending means in which raw materials such as hydrochloric acid, ethyl alcohol, ethylamine, triethylamine, etc. are evenly mixed with each other to make a material of one fluid, and the mediator is mixed, and the quantity is 20% to 60% by weight; The basic material to be coated serves to generate heat in any molded member, and the material is a material with a low expansion coefficient such as quartz, glass, mica, and plastic that can withstand high heat. The surface of the soft water to be cleaned is thoroughly washed (the surface to be coated), and it is dried by an appropriate method. In the basic material cooking step, the heated basic material is appropriately cleaned and left in a hot stove. , An activation phenomenon occurs on its surface after heating at high temperature, and a fixed amount of a fluid material to be further cooked is mixed with air and jetted into the high temperature stove at a temperature of 400-
The temperature is set to a high temperature of 850 ° C., the time is set to 10 to 30 minutes, and a fluid of a conductive material is jetted, and then immediately decomposed into atomization to become atomized charge-position ions,
The coating thickness of its atomization growth is 3μ-300μ, so that it evenly covers the surface of the base material.
Production of a semiconductor electrothermal film, characterized in that it comprises a high temperature atomization growth step in which a semi-conductive type exothermic thin film is formed together with the basic material by spraying on the surface of the activated basic material directly or indirectly. Law. 2. In the case of performing the above-mentioned atomization, it is mixed with air and the oxidation and reduction are sufficiently advanced,
A kind of natural growth phenomenon in a semiconductor material, depending on the time of atomization and the number of particles ejected to the semiconductor material so that the metal ion of the charged position is completely evenly covered with the metal oxide on the surface of the basic material. The manufacturing method according to claim 1, wherein the base material is integrally attached to the surface of the base material.