JPH0720058B2 - Integrated circuit - Google Patents

Integrated circuit

Info

Publication number
JPH0720058B2
JPH0720058B2 JP62255830A JP25583087A JPH0720058B2 JP H0720058 B2 JPH0720058 B2 JP H0720058B2 JP 62255830 A JP62255830 A JP 62255830A JP 25583087 A JP25583087 A JP 25583087A JP H0720058 B2 JPH0720058 B2 JP H0720058B2
Authority
JP
Japan
Prior art keywords
circuit
power supply
input
input circuit
supply line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62255830A
Other languages
Japanese (ja)
Other versions
JPH0198317A (en
Inventor
孝一郎 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62255830A priority Critical patent/JPH0720058B2/en
Publication of JPH0198317A publication Critical patent/JPH0198317A/en
Publication of JPH0720058B2 publication Critical patent/JPH0720058B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003Modifications for increasing the reliability for protection
    • H03K19/00346Modifications for eliminating interference or parasitic voltages or currents
    • H03K19/00361Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、集積回路に関し、特に、耐電源ノイズ性を強
化した集積回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an integrated circuit, and more particularly to an integrated circuit having enhanced power supply noise resistance.

〔従来の技術〕[Conventional technology]

従来の集積回路においては、集積回路外部から入力され
る入力信号を内部へ伝達する入力回路に電源電圧を供給
する電圧供給線は、集積回路チップの電源端子と直結し
ていた。即ち、第5図の従来例に示すように、Pチャン
ネルMOSFET P1とNチャンネルMOSFET N1からなる入力
インバータ回路40の2本の電源線は、電源端子Vおよび
接地端子Gに、短い金属配線により接続されており、一
方、入力回路40の出力はPチャンネルMOSFET P2とNチ
ャンネルMOSFET N2からなる内部回路の入力となってお
り、内部回路の電源線V2および接地線G2はそれぞれ集積
回路内部を通り、集積回路チップ内の多数のMOSFETに接
続する極めて長い金属層配線の端部であり、反対の端部
において電源端子Vあるいは接地端子Gと接続されてい
た。
In the conventional integrated circuit, the voltage supply line for supplying the power supply voltage to the input circuit for transmitting the input signal input from the outside of the integrated circuit to the inside is directly connected to the power supply terminal of the integrated circuit chip. That is, as shown in the conventional example of FIG. 5, the two power supply lines of the input inverter circuit 40 composed of the P-channel MOSFET P1 and the N-channel MOSFET N1 are connected to the power supply terminal V and the ground terminal G by a short metal wire. On the other hand, the output of the input circuit 40 is the input of the internal circuit composed of the P-channel MOSFET P2 and the N-channel MOSFET N2, and the power supply line V2 and the ground line G2 of the internal circuit pass through the inside of the integrated circuit respectively. It was an end of an extremely long metal layer wiring connected to many MOSFETs in the integrated circuit chip, and was connected to the power supply terminal V or the ground terminal G at the opposite end.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

上述した従来の集積回路においては、電源端子Vに負方
向のノイズが生じた場合又は接地端子Gに正方向のノイ
ズが生じた場合に、集積回路が誤動作しやすいという欠
点がある。この誤動作について、第5図および第6図
(a),(b),(c),(d)を用いて説明する。例
えば第5図において電源端子Vに5V,接地端子を0V,入力
端子Iには第6図(a)に示すように3V印加されている
状態においては、O1は0V,O2は5Vとなるが、この状態で
接地端子Gに第6図(b)に示すような数ns程度のノイ
ズが入力された場合には接地端子GとNチャンネルMOSF
ET N1のソースとの間の金属配線は短いのでノイズはそ
のまま伝わり、MOSFET N1のソースとゲートの電位差が
小さくなり、入力端子Iの電位からノイズの電位を引い
た値がMOSFET N1の閾値電圧より小さくなるとN1は非導
通となる。一方PチャンネルMOSFET P1は入力端子Iに
TTLレベル(第6図では3V)が印加されている状態で
は、ソース電位である電源端子の電極からみて−2Vの電
位がゲートに印加されている状態であるため導通してお
り、従って、O1は第6図(c)に示すように上昇する。
その結果MOSFET N2が導通し、O2は第6図(d)に示す
ように本来ハイレベルであるべきものがローレベルに低
下し、誤った信号を集積回路内部に伝達するため、集積
回路が誤動作することとなる。
The conventional integrated circuit described above has a drawback that the integrated circuit is apt to malfunction when negative power noise is generated at the power supply terminal V or positive noise is generated at the ground terminal G. This malfunction will be described with reference to FIGS. 5 and 6 (a), (b), (c), (d). For example, in the state where 5V is applied to the power supply terminal V, 0V to the ground terminal, and 3V to the input terminal I as shown in FIG. 6 (a) in FIG. 5, O1 becomes 0V and O2 becomes 5V. In this state, when noise of about several ns is input to the ground terminal G as shown in FIG. 6 (b), the ground terminal G and the N channel MOSF are connected.
Since the metal wiring between the source of ET N1 is short, noise is transmitted as it is, the potential difference between the source and gate of MOSFET N1 becomes small, and the value obtained by subtracting the potential of noise from the potential of input terminal I is lower than the threshold voltage of MOSFET N1. When it becomes smaller, N1 becomes non-conductive. On the other hand, P-channel MOSFET P1 is connected to input terminal I
When the TTL level (3V in FIG. 6) is applied, the potential is −2V as seen from the electrode of the power supply terminal, which is the source potential, and therefore the gate is conductive, so that O1 Rises as shown in FIG. 6 (c).
As a result, the MOSFET N2 becomes conductive, and the O2, which should originally be at the high level, drops to the low level as shown in FIG. 6 (d), and an erroneous signal is transmitted to the inside of the integrated circuit, so that the integrated circuit malfunctions. Will be done.

本発明は、入力回路に電源電圧を供給する電源線および
接地線をCR時定数回路を介して電源端子および接地端子
とそれぞれ接続することにより、電源端子あるいは接地
端子に入力されたノイズを平滑化し、入力回路のノイズ
による誤動作を防止した集積回路を得ることができるも
のである。
The present invention smoothes noise input to a power supply terminal or a ground terminal by connecting a power supply line and a ground line that supply a power supply voltage to an input circuit to a power supply terminal and a ground terminal via a CR time constant circuit, respectively. Thus, it is possible to obtain an integrated circuit in which malfunction due to noise in the input circuit is prevented.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の集積回路は、入力信号の供給を受ける入力回路
と、前記入力回路と接続される内部回路と、これら入力
回路および前記内部回路の全体を横切るように配設され
この内部回路に前記第1および第2の電源をそれぞれ供
給する第1および第2の電源線と、前記第1および第2
の電源線の各々の一端に設けられた第1および第2の電
源端子の各々を経由して前記入力回路に前記第1および
第2の電源をそれぞれ供給する第1および第2の入力回
路用電源線とを備える集積回路において、一端が前記第
1の電源端子に他端が前記第1の入力回路用電源線にそ
れぞれ接続された第1の抵抗と、一端が前記第1の入力
回路用電源線に他端が前記第1の電源線にそれぞれ接続
された第1の容量素子とを含む第1のCR時定数回路と、
一端が前記第2の電源端子に他端が前記第2の入力回路
用電源線にそれぞれ接続された第2の抵抗と、一端が前
記第2の入力回路用電源線に他端が前記第2の電源線に
それぞれ接続された第2の容量素子とを含む第2のCR時
定数回路との少なくともいずれか一方を備えて構成され
る。
The integrated circuit of the present invention is arranged such that an input circuit supplied with an input signal, an internal circuit connected to the input circuit, and the input circuit and the entire internal circuit are arranged so as to cross the entire input circuit and the internal circuit. First and second power supply lines for supplying first and second power supplies, respectively, and the first and second power supply lines.
For the first and second input circuits for supplying the first and second power supplies to the input circuit via the first and second power supply terminals provided at one end of each of the power supply lines In an integrated circuit including a power supply line, one end is connected to the first power supply terminal and the other end is connected to the first input circuit power supply line, and one end is connected to the first input circuit. A first CR time constant circuit including a power source line and a first capacitive element having the other end connected to the first power source line;
A second resistor having one end connected to the second power supply terminal and the other end connected to the second input circuit power supply line; and one end connected to the second input circuit power supply line and the other end connected to the second And a second CR time constant circuit including a second capacitive element connected to each of the power supply lines.

〔実施例〕〔Example〕

次に、本発明について図面を参照して説明する。 Next, the present invention will be described with reference to the drawings.

第1図は本発明の集積回路の入力回路部分の一実施例を
示す回路図である。電源端子Vと入力回路用電源線V1の
間に抵抗RVと容量CVにより構成されたCR時定数回路が設
置され、また接地端子Gと入力回路用接地線G1の間に抵
抗RGと容量CGからなるCR時定数回路12が設置されてお
り、V1とG1はそれぞれ入力回路10の電源供給線および接
地電位供給線となっている。また、容量CVのV1と反対側
の端子T1は入力回路10を除く内部回路用の電源を供給す
る内部電源線V2に、容量CGのV2と反対側の端子T2は内部
回路用の接地を供給する内部接地線G2にそれぞれ接続さ
れる。これら内部電源線V2および内部接地線G2はそれぞ
れ電源端子および接地端子から遠く引きまわされ、内部
回路素子の巨大な浮遊容量を含むため上記電源端子およ
び接地端子の影響を殆ど受けない。このような接続とす
ることにより、電源端子および接地端子から入力される
ノイズを平滑化するとともに、内部回路が一斉にスイッ
チングしたときなどの大電流に起因する電位変動(ノイ
ズ)に対しても、CVあるいはCGを介してこれら電源線V
1,V2および接地線G1,G2の高周波(パルス)成分の電位
が常にほぼ同電位となるよう連動するため、この内部ノ
イズに対しても入力回路の動作を安定に保持できる。CR
時定数回路11は電源電圧に対して負方向のノイズによる
誤動作を時定数回路12は接地電圧に対して正方向のノイ
ズによる誤動作を防止するものであるが、必要に応じ
て、一方の時定数回路のみを設置しても良い。
FIG. 1 is a circuit diagram showing an embodiment of an input circuit portion of an integrated circuit of the present invention. A CR time constant circuit composed of a resistance RV and a capacitance CV is installed between the power supply terminal V and the input circuit power supply line V1, and a resistor RG and a capacitance CG are connected between the ground terminal G and the input circuit ground line G1. The CR time constant circuit 12 is provided, and V1 and G1 are the power supply line and the ground potential supply line of the input circuit 10, respectively. Further, the terminal T1 on the side opposite to V1 of the capacitor CV supplies the internal power supply line V2 which supplies power for the internal circuits except the input circuit 10, and the terminal T2 on the side opposite to V2 of the capacitor CG supplies the ground for the internal circuit. Are connected to the internal ground line G2. The internal power supply line V2 and the internal ground line G2 are drawn far from the power supply terminal and the ground terminal, respectively, and contain a huge stray capacitance of the internal circuit element, so that they are hardly affected by the power supply terminal and the ground terminal. By making such a connection, noise input from the power supply terminal and the ground terminal is smoothed, and potential fluctuations (noise) caused by a large current such as when the internal circuits switch all at once, These power lines V through CV or CG
Since the potentials of the high frequency (pulse) components of 1, V2 and the ground lines G1, G2 are always kept at substantially the same potential, the operation of the input circuit can be stably maintained against this internal noise. CR
The time constant circuit 11 prevents malfunction due to noise in the negative direction with respect to the power supply voltage, and the time constant circuit 12 prevents malfunction due to noise in the positive direction with respect to the ground voltage. You may install only a circuit.

第2図は第1図に示す本発明の実施例をより具体的な第
1の実施例を示した回路図である。時定数回路21は第1
図と同様に抵抗RVと容量CVで構成され、時定数回路22も
同様に抵抗RGと容量CGで構成されている。入力回路20は
PチャンネルMOSFET P1とNチャンネルMOSFET N1で構
成されたインバータでその出力O1は、内部回路であるP
チャンネルMOSFET P2とNチャンネルMOSFET N2で構成
されたインバータの入力となっている。また、入力回路
20の電源電圧供給線V1は、RVとCVの接続点から取り出さ
れ、接地電圧供給線G1はRGとCGの接続点から取り出され
ている。第1の実施例と同様に、CVの他端は内部電源線
V2に、CGの他端は内部接地線G2にそれぞれ接続されてい
る。この第2図の実施例の回路において、例えば、第5
図の従来例の回路と同様に、第6図(b)の如きノイズ
が接地端子Gに入力された場合に、ノイズはCR時定数回
路22により平滑化されるため、G1に発生するノイズの波
高は接地端子Gに入力されたノイズの波高に対してずっ
と小さくなる。G1に発生するノイズの波高はCG及びRGに
より変化するため、許容限界のノイズの波高および入力
時間に応じてRGおよびCGを設定することにより、ノイズ
によるG1の電位上昇をN1が非導通にならない範囲に押さ
えることができ、その結果O1はハイレベルを保持し、O2
はローレベルで不変となり、誤動作を防止することがで
きる。
FIG. 2 is a circuit diagram showing a more specific first embodiment of the present invention shown in FIG. The time constant circuit 21 is the first
Similar to the figure, it is composed of a resistor RV and a capacitor CV, and the time constant circuit 22 is also composed of a resistor RG and a capacitor CG. The input circuit 20 is an inverter composed of a P-channel MOSFET P1 and an N-channel MOSFET N1 and its output O1 is P which is an internal circuit.
It is the input of the inverter composed of channel MOSFET P2 and N channel MOSFET N2. Also the input circuit
The 20 power supply voltage supply line V1 is taken out from the connection point of RV and CV, and the ground voltage supply line G1 is taken out from the connection point of RG and CG. Similar to the first embodiment, the other end of CV is an internal power supply line.
The other end of CG is connected to V2 and the internal ground line G2, respectively. In the circuit of the embodiment of FIG. 2, for example,
Similar to the circuit of the conventional example in the figure, when noise as shown in FIG. 6 (b) is input to the ground terminal G, the noise is smoothed by the CR time constant circuit 22, so that the noise generated in G1 is The wave height becomes much smaller than the wave height of the noise input to the ground terminal G. Since the noise wave height generated in G1 changes depending on CG and RG, setting RG and CG according to the allowable noise wave height and input time prevents N1 from becoming non-conducting due to G1 potential rise due to noise. Can be held in range, resulting in O1 holding high and O2
Becomes invariable at low level, and it is possible to prevent malfunction.

第3図は本発明の第2の実施例を示す回路図である。第
3図の実施例では、第2図の実施例における(CR時定数
回路のR部分である抵抗RVをドレインとゲートが接続さ
れたPチャンネルディプリーション型MOSFET PDに、抵
抗RGをドレインとゲートが接続されたNチャンネル型MO
SFET NDに置き換えている以外は同一である。第2図の
実施例の場合、ノイズによって上昇したG1の電位が再び
放電するに要する時間に比較的長時間を要し、これが入
力回路のスイッチング特性および入力電圧対出力電圧特
性に悪影響を及ぼすおそれがあるが、第3図の実施例の
構成では、電源端子VからV1をみた場合の抵抗あるいは
接地端子GからG1をみた場合の抵抗は大きく、逆にV1か
らVあるいはG1からGをみた場合の抵抗はずっと小さく
できるため、G1あるいはV1のノイズによる電位上昇をす
みやかに放電することが可能となり、上述の悪影響を除
去ないしは軽減することができるという利点がある。
FIG. 3 is a circuit diagram showing a second embodiment of the present invention. In the embodiment of FIG. 3, the resistor RV, which is the R portion of the CR time constant circuit in the embodiment of FIG. 2, is connected to the P-channel depletion type MOSFET PD whose drain and gate are connected, and the resistor RG is connected to the drain. N-channel MO with gate connected
It is the same except that it is replaced with SFET ND. In the case of the embodiment shown in FIG. 2, it takes a relatively long time to discharge the potential of G1 raised by noise again, which may adversely affect the switching characteristic of the input circuit and the input voltage-output voltage characteristic. However, in the configuration of the embodiment of FIG. 3, the resistance when viewing V1 from the power supply terminal V or the resistance when viewing G1 from the ground terminal G is large, and conversely when viewing V1 to V or G1 to G. Since the resistance of can be made much smaller, it is possible to discharge the potential rise due to the noise of G1 or V1 promptly, and there is an advantage that the above-mentioned adverse effects can be eliminated or reduced.

第4図は本発明の第3の実施例を示す回路図である。電
源端子Vと入力回路の電源電圧供給線V1の間には第2図
の実施例におけるCR時定数のR部分である抵抗RVを抵抗
R1およびドインとゲートが接続されたPチャンネルMOSF
ET PDの並列接続回路11が挿入されている。また、接地
端子Gと入力回路の接地電圧供給線G1の間には、同様に
抵抗R2およびドレインとゲートが接続されたNチャンネ
ルMOSFET NDの並列接続回路12が挿入されている。Pチ
ャンネルMOSFET P1とNチャンネルMOSFET N1で構成さ
れた入力回路10はV1とG1に接続され、入力端子Iから入
力した信号を反転して、PチャンネルMOSFET P2および
NチャンネルMOSFET N2により構成された内部回路へ伝
えることは第5図の場合と同様である。この第4図の実
施例の回路において、例えば第5図の従来例の回路と同
様に、第6図(b)の如きノイズが接地端子Gに入力さ
れた場合に、ノイズは抵抗R2と入力回路の接地電圧供給
用配線G1の浮遊容量CGによる時定数回路の働きでノイズ
は減衰し、G1の電位変動を小さくすることができるため
に、入力回路10の出力O1の上昇の程度はP2およびN2で構
成された内部回路の回路閾値以下に押さえられ、出力O2
の変動を生じなくすることができる。また、接地端子G
へのノイズの有無にかかわらず入力端子Iから入力され
る信号がTTLレベルであるため、入力信号がハイレベル
の時は、PチャンネルMOSFETは導通状態であることもあ
り、またNチャンネルMOSFETも導通状態であるので、G1
には電流が流れ込み、G1の電位を上昇させ、これが入力
回路の特性を劣化させる要因となるが、本発明において
は、G1の電位が上昇した場合には、NDを通じて接地端子
Gへ電流を流すことにより、G1の電位上昇を押さえるこ
とができる。また、入力回路10のスイッチング時のG1の
電位上昇および接地端子からのノイズによるG1の電位上
昇についてもGの電位が正常な接地電位となるのに追従
して速かにNDを通じて放電し、正常な電位に回復するこ
とができる。電源端子Vに生じた負方向のノイズに対し
ても、R1とCVにより減衰することは上述したと同様であ
り、またV1の電位の低下がPDの働きにより、Vの電源電
位への回復に速やかに追従して回復することも上述の場
合と同様である。なお、時定数回路を設置したことによ
って生じる入力回路の特性劣化、例えば入力対出力特性
およびスイッチング特性の劣化を防止するために、第2
図のRVおよび第3図,第4図のPDの抵抗値はP1の導通時
抵抗の1/10以下に、第2図のRGおよび第3図,第4図の
NDの抵抗値はN1の導通時抵抗の1/10以下にそれぞれ設定
することが望ましい。
FIG. 4 is a circuit diagram showing a third embodiment of the present invention. Between the power supply terminal V and the power supply voltage supply line V1 of the input circuit, a resistor RV which is the R part of the CR time constant in the embodiment of FIG.
R1 and P-channel MOSF with gate connected to drain
The parallel connection circuit 11 of the ET PD is inserted. Further, between the ground terminal G and the ground voltage supply line G1 of the input circuit, a resistance R2 and a parallel connection circuit 12 of N-channel MOSFETs ND whose drains and gates are similarly connected are inserted. The input circuit 10 composed of the P-channel MOSFET P1 and the N-channel MOSFET N1 is connected to V1 and G1, and the signal input from the input terminal I is inverted to form the internal circuit composed of the P-channel MOSFET P2 and the N-channel MOSFET N2. Transmission to the circuit is the same as in the case of FIG. In the circuit of the embodiment shown in FIG. 4, when noise as shown in FIG. 6 (b) is input to the ground terminal G, noise is input to the resistor R2 as in the circuit of the conventional example shown in FIG. Noise is attenuated by the function of the time constant circuit due to the stray capacitance CG of the ground voltage supply wiring G1 of the circuit, and the potential fluctuation of G1 can be reduced, so that the output O1 of the input circuit 10 rises at P2 and It is suppressed below the circuit threshold of the internal circuit composed of N2, and the output O2
Can be eliminated. Also, the ground terminal G
Since the signal input from the input terminal I is TTL level regardless of the presence or absence of noise to the P-channel MOSFET, the P-channel MOSFET may be conductive when the input signal is high level, and the N-channel MOSFET may be conductive. G1 because it is in a state
A current flows into the circuit, which raises the potential of G1, which causes deterioration of the characteristics of the input circuit. In the present invention, when the potential of G1 rises, a current is passed to the ground terminal G through ND. As a result, it is possible to suppress the rise in the potential of G1. Also, regarding the potential rise of G1 at the time of switching the input circuit 10 and the potential rise of G1 due to the noise from the ground terminal, the potential of G is discharged normally through ND in accordance with the normal ground potential of G, It is possible to recover the potential. The negative direction noise generated at the power supply terminal V is also attenuated by R1 and CV as described above, and the decrease in the potential of V1 can be restored to the power supply potential of V by the action of PD. Promptly following and recovering is similar to the above case. In order to prevent the deterioration of the characteristics of the input circuit caused by the installation of the time constant circuit, for example, the deterioration of the input-output characteristics and the switching characteristics, the second
The resistance value of RV in the figure and PD in Figures 3 and 4 is less than 1/10 of the resistance of P1 in conduction, and RG in Figure 2 and in Figure 3 and 4
It is desirable to set the resistance value of ND to 1/10 or less of the resistance when N1 is conducting.

〔発明の効果〕〔The invention's effect〕

以上説明したように、本発明は、電源端子もしくは接地
端子のいずれか一方、または、双方と入力回路への電源
供給線との間にCR時定数回路を設置することにより、電
源端子あるいは接地端子に生じたパルスノイズによる誤
動作に対して信頼性が強化された集積回路を得ることが
できる効果がある。
As described above, according to the present invention, by installing a CR time constant circuit between either the power supply terminal or the ground terminal, or both and the power supply line to the input circuit, the power supply terminal or the ground terminal is provided. There is an effect that it is possible to obtain an integrated circuit with enhanced reliability against malfunction due to pulse noise generated in the above.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の集積回路の入力回路部の構成を示す回
路図、第2図は第1図に示す実施例をより具体的にした
第1の実施例を示す回路図、第3図は本発明の第2の実
施例を示す回路図、第4図は本発明の第3の実施例を示
す回路図、第5図は従来例を示す回路図、第6図はノイ
ズの状態を説明する概念図である。 図において、V……電源端子、I……入力端子、G……
接地端子、11,12……CR時定数回路、RV,RG……抵抗、C
V,CG……容量、V1……入力回路用電源線、G1……入力回
路用接地線、10……入力回路、O1……入力回路の出力、
21,22,31,32……CR時定数回路、PD……Pチャンネルデ
ィプリーション型MOSFET、ND……Nチャンネルディプリ
ーション型MOSFET、20,30……入力回路、P1,P2……Pチ
ャンネルエンハンスメント型MOSFET、N1,N2……Nチャ
ンネルエンハンスメント型MOSFET、V2……内部電源線、
G2……内部接地線。
1 is a circuit diagram showing a configuration of an input circuit portion of an integrated circuit of the present invention, FIG. 2 is a circuit diagram showing a first embodiment more concretely showing the embodiment shown in FIG. 1, and FIG. Is a circuit diagram showing a second embodiment of the present invention, FIG. 4 is a circuit diagram showing a third embodiment of the present invention, FIG. 5 is a circuit diagram showing a conventional example, and FIG. It is a conceptual diagram explaining. In the figure, V ... power supply terminal, I ... input terminal, G ...
Ground terminal, 11,12 ... CR time constant circuit, RV, RG ... Resistance, C
V, CG ... Capacity, V1 ... Input circuit power supply line, G1 ... Input circuit ground line, 10 ... Input circuit, O1 ... Input circuit output,
21,22,31,32 …… CR time constant circuit, PD …… P channel depletion type MOSFET, ND …… N channel depletion type MOSFET, 20,30 …… Input circuit, P1, P2 …… P Channel enhancement type MOSFET, N1, N2 …… N channel enhancement type MOSFET, V2 …… Internal power supply line,
G2: Internal ground wire.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】入力信号の供給を受ける入力回路と、前記
入力回路と接続される内部回路と、これら入力回路およ
び前記内部回路の全体を横切るように配設されこの内部
回路に前記第1および第2の電源をそれぞれ供給する第
1および第2の電源線と、前記第1および第2の電源線
の各々の一端に設けられた第1および第2の電源端子の
各々を経由して前記入力回路に前記第1および第2の電
源をそれぞれ供給する第1および第2の入力回路用電源
線とを備える集積回路において、 一端が前記第1の電源端子に他端が前記第1の入力回路
用電源線にそれぞれ接続された第1の抵抗と、一端が前
記第1の入力回路用電源線に他端が前記第1の電源線に
それぞれ接続された第1の容量素子とを含む第1のCR時
定数回路と、 一端が前記第2の電源端子に他端が前記第2の入力回路
用電源線にそれぞれ接続された第2の抵抗と、一端が前
記第2の入力回路用電源線に他端が前記第2の電源線に
それぞれ接続された第2の容量素子とを含む第2のCR時
定数回路との少なくともいずれか一方を備えることを特
徴とする集積回路。
1. An input circuit supplied with an input signal, an internal circuit connected to the input circuit, and an input circuit arranged to traverse the input circuit and the entire internal circuit. The first and second power supply lines for supplying a second power supply respectively, and the first and second power supply terminals provided at one end of each of the first and second power supply lines, respectively. An integrated circuit comprising first and second power supply lines for input circuit for supplying the first and second power supplies to an input circuit, wherein one end is the first power supply terminal and the other end is the first input A first resistance element connected to the circuit power supply line, and a first capacitive element having one end connected to the first input circuit power supply line and the other end connected to the first power supply line, respectively. 1 CR time constant circuit and one end of the second power supply terminal A second resistor having the other end connected to the second input circuit power supply line, and one end connected to the second input circuit power supply line and the other end connected to the second power supply line, respectively. An integrated circuit comprising at least one of a second CR time constant circuit including a second capacitance element.
【請求項2】前記第1および第2の抵抗が各々ドレイン
とゲートとを共通接続したMOSFETである特許請求の範囲
第1項記載の集積回路。
2. The integrated circuit according to claim 1, wherein each of the first and second resistors is a MOSFET in which a drain and a gate are commonly connected.
【請求項3】前記第1および第2の抵抗が各々ドレイン
とゲートとを共通接続したMOSFETと第3の抵抗との並列
接続回路である特許請求の範囲第1項記載の集積回路。
3. The integrated circuit according to claim 1, wherein the first and second resistors are a parallel connection circuit of a MOSFET having a drain and a gate commonly connected and a third resistor.
JP62255830A 1987-10-09 1987-10-09 Integrated circuit Expired - Lifetime JPH0720058B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62255830A JPH0720058B2 (en) 1987-10-09 1987-10-09 Integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62255830A JPH0720058B2 (en) 1987-10-09 1987-10-09 Integrated circuit

Publications (2)

Publication Number Publication Date
JPH0198317A JPH0198317A (en) 1989-04-17
JPH0720058B2 true JPH0720058B2 (en) 1995-03-06

Family

ID=17284197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62255830A Expired - Lifetime JPH0720058B2 (en) 1987-10-09 1987-10-09 Integrated circuit

Country Status (1)

Country Link
JP (1) JPH0720058B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5041741A (en) * 1990-09-14 1991-08-20 Ncr Corporation Transient immune input buffer
JPH0548426A (en) * 1991-08-16 1993-02-26 Nec Kyushu Ltd Signal amplifier circuit
US5204554A (en) * 1991-12-06 1993-04-20 National Semiconductor Corporation Partial isolation of power rails for output buffer circuits
JPH10135336A (en) * 1996-10-25 1998-05-22 Toshiba Corp Semiconductor integrated circuit device, method of reducing noise produced by semiconductor integrated circuit device and internal power system of semiconductor integrated circuit device
DE19855445C1 (en) * 1998-12-01 2000-02-24 Siemens Ag Arrangement for reducing electromagnetic emission for ICs

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50110761A (en) * 1974-02-08 1975-09-01
JPS5976141U (en) * 1982-11-12 1984-05-23 日立電子株式会社 level conversion circuit

Also Published As

Publication number Publication date
JPH0198317A (en) 1989-04-17

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