JPH07193439A - Amplifier part - Google Patents

Amplifier part

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Publication number
JPH07193439A
JPH07193439A JP33121293A JP33121293A JPH07193439A JP H07193439 A JPH07193439 A JP H07193439A JP 33121293 A JP33121293 A JP 33121293A JP 33121293 A JP33121293 A JP 33121293A JP H07193439 A JPH07193439 A JP H07193439A
Authority
JP
Japan
Prior art keywords
transistor
amplifier
voltage
input
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP33121293A
Other languages
Japanese (ja)
Other versions
JP3052712B2 (en
Inventor
Osamu Nara
修 奈良
Seiji Miyoshi
清司 三好
Satoshi Yamamoto
聡 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5331212A priority Critical patent/JP3052712B2/en
Publication of JPH07193439A publication Critical patent/JPH07193439A/en
Application granted granted Critical
Publication of JP3052712B2 publication Critical patent/JP3052712B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To obtain an amplifier for obtaining a line driver circuit, which is small in both distortion and power consumption, regarding an amplifier part. CONSTITUTION:AB and +B class push-pull characteristics are obtained by performing a connection by using amplifiers 1 and 2, constant current sources 3 and 4, a one-conduction type transistor Tr 1, a one-conduction type transistor Tr 3 whose gate is connected with reference voltage 5, an opposite conductive type transistor Tr 2 and an opposite conductive type transistor Tr 4 whose gate is connected with reference voltage 6. Further, by applying a negative feedback, an amplifier small in distortion and power consumption is obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、伝送路にアナログ信号
を増幅して出力する為のラインドライバ回路(低インピ
ーダンス駆動用増幅器)を構成する場合等に用いる増幅
部に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an amplifying section used for constructing a line driver circuit (low impedance driving amplifier) for amplifying and outputting an analog signal on a transmission line.

【0002】ラインドライバ回路を使用するシステムの
1例につき説明する。図9は1例のラインドライバ回路
を用いる加入者線伝送システムのブロック図である。
An example of a system using a line driver circuit will be described. FIG. 9 is a block diagram of a subscriber line transmission system using an example line driver circuit.

【0003】図9に示す加入者線伝送システムは、2線
式メタリックケーブルの加入者線24の両端の、局側に
はディジタル回線終端部21を接続し、加入者宅側に
は、ディジタル回線終端部20を接続し双方向のディジ
タル伝送が出来るようにするものである。
The subscriber line transmission system shown in FIG. 9 has a digital line terminating unit 21 connected to both ends of a subscriber line 24 of a two-wire metallic cable on the station side and a digital line on the subscriber's home side. The terminal unit 20 is connected to enable bidirectional digital transmission.

【0004】ディジタル回線終端部20,21には、線
路終端部22と回線終端部23を有し、線路終端部22
には、送信信号を増幅出力するラインドライバ回路3
0,ハイブリッド31及び波形等化,タイミング抽出,
エコーキャンセラ等を有する受信部32を有している。
The digital line termination units 20 and 21 have a line termination unit 22 and a line termination unit 23, respectively.
Includes a line driver circuit 3 that amplifies and outputs a transmission signal.
0, hybrid 31 and waveform equalization, timing extraction,
The receiver 32 has an echo canceller and the like.

【0005】ラインドライバ回路30は、このようなと
ころに使用され、この場合は加入者毎に2個づづ必要と
なる為に、LSI化出来、歪みが小さく、消費電力が小
さいものであることが望まれている。
The line driver circuit 30 is used in such a place, and in this case, two lines are required for each subscriber, so that the line driver circuit 30 can be made into an LSI, has a small distortion, and consumes a small amount of power. Is desired.

【0006】[0006]

【従来の技術】図10は従来例のラインドライバ回路の
ブロック図である。図10のラインドライバ回路では、
入力するアナログ信号を、電圧VRを振幅の中心とし
て、A級増幅する負帰還型の増幅器13と、入力するア
ナログ信号を、電圧VRを振幅の中心とし、増幅器13
と逆位相でA級増幅する負帰還型の増幅器14とを用
い、増幅器13,14の出力を、トランスTの両端に接
続してトランスTより、増幅した歪みの小さい信号を出
力するものである。
2. Description of the Related Art FIG. 10 is a block diagram of a conventional line driver circuit. In the line driver circuit of FIG.
A negative feedback amplifier 13 that amplifies the input analog signal by class A with the voltage VR as the center of amplitude, and the input analog signal with the voltage VR as the center of amplitude by the amplifier 13
And a negative feedback type amplifier 14 that performs class A amplification in the opposite phase, and the outputs of the amplifiers 13 and 14 are connected to both ends of the transformer T and the amplified signal with less distortion is output from the transformer T. .

【0007】[0007]

【発明が解決しようとする課題】しかしながら、増幅器
13,14はA級で動作する為に消費電力が大きい問題
点がある。
However, since the amplifiers 13 and 14 operate in class A, there is a problem that the power consumption is large.

【0008】本発明は、歪み及び消費電力共に小さいラ
インドライバ回路を得る為の増幅部の提供を目的として
いる。
It is an object of the present invention to provide an amplifier for obtaining a line driver circuit which has low distortion and low power consumption.

【0009】[0009]

【課題を解決するための手段】低消費電力の増幅器を得
る為には、図6(A)に示すB級プッシュプル特性の増
幅器を用いる方法が考えられるが、LSIのトランジス
タを用いて実現する場合は、用いるトランジスタの特性
にばらつきがある為にオフセット電圧が生ずると消費電
力が増加するので、図6(A)に示す不感帯の如く、あ
る程度広くしなければならない。
In order to obtain an amplifier with low power consumption, a method of using an amplifier having a class B push-pull characteristic shown in FIG. 6A can be considered, but it is realized by using a transistor of LSI. In this case, since power consumption increases when an offset voltage is generated due to variations in the characteristics of the transistors used, it is necessary to widen it to some extent as in the dead zone shown in FIG.

【0010】不感帯があると、歪みを少なくする為に負
帰還をかけても、不感帯部分は利得が0となり、信号の
一部が欠げてしまうクロスオーバ歪みが生ずる。クロス
オーバ歪みを少なくする為には、図6(B)に示す如
く、不感帯部分はAB級の動作をするようにするとよ
い。
If there is a dead zone, even if negative feedback is applied to reduce the distortion, the gain becomes 0 in the dead zone and a crossover distortion occurs in which a part of the signal is lost. In order to reduce the crossover distortion, it is advisable to perform the AB class operation in the dead zone as shown in FIG. 6 (B).

【0011】しかしAB級とB級の間に折れ線部分が出
来歪みを生ずるので、負帰還をかけると、図6(B)の
点線で示す如き特性が得られ、低歪み、低消費電力の増
幅部が得られる。
However, since a broken line portion between the class AB and the class B causes distortion, a characteristic as shown by a dotted line in FIG. 6 (B) is obtained by applying negative feedback, and amplification of low distortion and low power consumption is achieved. Part is obtained.

【0012】この図6(B)に示すAB級+B級のプッ
シュプル特性を得、負帰還をかけ、図6(B)の点線で
示す特性が得られる増幅部を実現する為に、図1の本発
明の実施例の増幅部のブロック図に示す如く、電源電圧
とアース間に、一導電型の第1のトランジスタTr1と
反対導電型の第2のトランジスタTr2とを直列に接続
し、該接続点を出力とする回路と、第1の定電流源3
と、ゲートに第1の参照電圧5を接続した一導電型の第
3のトランジスタTr3を直列に接続した回路と、ゲー
トに第2の参照電圧6を接続した反対導電型の第4のト
ランジスタTr4と、第2の定電流源4とを直列に接続
した回路とを挿入し、入力するアナログ信号を、第1,
第2の増幅器1,2に入力するようにし、該第1の増幅
器1の出力を、該第1のトランジスタTr1のゲートに
接続すると共に、該第1の定電流源3と該第3のトラン
ジスタTr3との接続点に接続し、該第2の増幅器2の
出力を、該第2のトランジスタTr2のゲートに接続す
ると共に、該第4のトランジスタTr4と該第2の定電
流源4との接続点に接続し、且つ該第1のトランジスタ
Tr1と該第2のトランジスタTr2との接続点より抵
抗R1を介して該第1,第2の増幅器1,2の、振幅の
中心電圧V1のバイアスが印加されている入力に負帰還
をかけた構成とする。
In order to obtain the class AB + class B push-pull characteristics shown in FIG. 6 (B) and apply negative feedback to realize an amplifier section which can obtain the characteristics shown by the dotted line in FIG. 6 (B), As shown in the block diagram of the amplifier section of the embodiment of the present invention, a first conductivity type first transistor Tr1 and a second conductivity type second transistor Tr2 are connected in series between the power supply voltage and the ground. A circuit that outputs the connection point and the first constant current source 3
A circuit in which a third transistor Tr3 of one conductivity type having the first reference voltage 5 connected to the gate is connected in series, and a fourth transistor Tr4 of the opposite conductivity type having the second reference voltage 6 connected to the gate And a circuit in which the second constant current source 4 is connected in series are inserted, and the analog signal to be input is
The output of the first amplifier 1 is connected to the gate of the first transistor Tr1, and the first constant current source 3 and the third transistor are input to the second amplifiers 1 and 2. The output of the second amplifier 2 is connected to the connection point with Tr3, the output of the second amplifier 2 is connected to the gate of the second transistor Tr2, and the connection between the fourth transistor Tr4 and the second constant current source 4 is connected. Bias of the central voltage V1 of the amplitude of the first and second amplifiers 1 and 2 connected to the point and via the resistor R1 from the connection point of the first transistor Tr1 and the second transistor Tr2. Negative feedback is applied to the applied input.

【0013】[0013]

【作用】電源電圧を5V,振幅の中心電圧V1を2.4
Vとし、一導電型のトランジスタTr1,Tr3をPチ
ャネルMOSFETとし、反対導電型のトランジスタT
r2,Tr4をNチャネルMOSFETとして以下説明
する。
Function: The power supply voltage is 5V, and the amplitude center voltage V1 is 2.4.
V, the transistors Tr1 and Tr3 of one conductivity type are P-channel MOSFETs, and the transistor T of the opposite conductivity type is
The r2 and Tr4 will be described below as N-channel MOSFETs.

【0014】入力電圧が中心電圧V1より高くなり、第
1の増幅器1の電源よりの吸い込み電流が大きくなり、
出力電圧が不感帯の端の図6(A)のイ点に相当する電
圧になった時の吸い込み電流I0 に、定電流源3の電流
Irefを等しくなるようにし、又参照電圧5を、第1
の増幅器1の出力電圧が不感帯の端の図6(A)のイ点
に相当する電圧になった時以上はトランジスタTr3に
は電流が流れない電圧とする。
The input voltage becomes higher than the center voltage V1, the sink current from the power source of the first amplifier 1 becomes large,
The current Iref of the constant current source 3 is made equal to the sink current I 0 when the output voltage becomes a voltage corresponding to the point A in FIG. 6A at the end of the dead zone, and the reference voltage 5 is set to 1
When the output voltage of the amplifier 1 becomes the voltage corresponding to the point A in FIG. 6A at the end of the dead zone, the voltage is set so that no current flows in the transistor Tr3.

【0015】入力電圧が中心電圧V1より低い方に大き
くなり、第2の増幅器2の電源よりの吐き出し電流が大
きくなり出力電圧が不感帯の端の図6(A)のロ点に相
当する電圧になった時の吐き出し電流I0 ’に、定電流
源4の電流Irefを等しくなるようにし、又参照電圧
6を、第2の増幅器2の出力電圧が不感帯の端の図6
(A)のロ点に相当する電圧になった時以上はトランジ
スタTr4には電流が流れない電圧とする(こうすると
参照電圧5の電圧はトランジスタTr4のドレインとゲ
ート間の電圧に等しくなる)。
The input voltage increases toward the lower side of the center voltage V1, the discharge current from the power source of the second amplifier 2 increases, and the output voltage becomes a voltage corresponding to the point B of FIG. 6A at the end of the dead zone. The current Iref of the constant current source 4 is set to be equal to the discharge current I 0 ′ when the output voltage of the second amplifier 2 becomes zero , and the reference voltage 6 is set at the end of the dead band of the output voltage of the second amplifier 2.
A voltage is set such that no current flows in the transistor Tr4 when the voltage corresponding to the point (A) is reached (the voltage of the reference voltage 5 becomes equal to the voltage between the drain and the gate of the transistor Tr4).

【0016】このようにすると、増幅器1への入力電圧
が正方向に大きくなり、出力電圧が図6(A)のイ点に
相当する電圧になる迄は、トランジスタTr3にはIr
ef−I0 の電流が流れ、増幅器1の出力インピーダン
スは低く利得は小さいが、イ点に相当する電圧以上にな
ると、トランジスタTr3には電流が流れなくなり、増
幅器1の出力インピーダンスは非常に高くなり利得は大
きくなる。
In this way, the input voltage to the amplifier 1 increases in the positive direction and the transistor Tr3 has Ir until the output voltage reaches a voltage corresponding to the point A in FIG. 6A.
The current of ef-I 0 flows, the output impedance of the amplifier 1 is low and the gain is small, but when the voltage exceeds the voltage corresponding to the point a, the current does not flow through the transistor Tr3, and the output impedance of the amplifier 1 becomes very high. The gain increases.

【0017】増幅器2側では、入力電圧が負方向に大き
くなり、出力電圧が図6(A)のロ点に相当する電圧に
なる迄は、トランジスタTr4にはIref−I0 ’の
電流が流れ、増幅器2の出力インピーダンスは低く利得
は小さいが、ロ点に相当する電圧以上になると、トラン
ジスタTr4には電流が流れなくなり、増幅器2の出力
インピーダンスは非常に高くなり利得は大きくなる。
On the amplifier 2 side, a current of Iref-I 0 'flows through the transistor Tr4 until the input voltage increases in the negative direction and the output voltage reaches the voltage corresponding to point B in FIG. 6 (A). Although the output impedance of the amplifier 2 is low and the gain is small, when the voltage becomes equal to or higher than the voltage corresponding to the point B, no current flows in the transistor Tr4, the output impedance of the amplifier 2 becomes very high, and the gain becomes large.

【0018】トランジスタTr1は、ゲートへの入力電
圧が高くなるに従いインピーダンスが小さくなり、トラ
ンジスタTr2は、ゲートへの入力電圧が上記と逆方向
に高くなるに従いインピーダンスが小さくなる。
The impedance of the transistor Tr1 becomes smaller as the input voltage to the gate becomes higher, and the impedance of the transistor Tr2 becomes smaller as the input voltage to the gate becomes higher in the opposite direction.

【0019】ここで、増幅部の等価回路を説明するが、
増幅器1側と増幅器2側とは同じようになるので、増幅
器1側につき図2を用いて説明する。即ち、吸い込み電
流I0 <定電流源3の電流Irefの間は、トランジス
タTr3のインピーダンスRsは小さく、増幅器1の出
力インピーダンスR0 より遙かに小さいので、等価回路
は図2(A)に示す如くなり、増幅度は(1)式に示す
如く、gm1×Rs×gm3×RLとなり(但しgm
1,gm3は増幅器1,トランジスタTr1の相互コン
ダクタンス、RLは出力負荷を示す)利得は小さくAB
級の動作をするようになる。
Here, the equivalent circuit of the amplifier section will be described.
Since the amplifier 1 side and the amplifier 2 side are the same, the amplifier 1 side will be described with reference to FIG. That is, while the sink current I 0 <the current Iref of the constant current source 3, the impedance Rs of the transistor Tr3 is small and much smaller than the output impedance R 0 of the amplifier 1, so the equivalent circuit is shown in FIG. The amplification factor is gm1 × Rs × gm3 × RL as shown in the equation (1)
1, gm3 is the transconductance of the amplifier 1 and the transistor Tr1, and RL is the output load.) The gain is small and AB
Behave like a class.

【0020】I0 >Irefとなると、トランジスタT
r3のインピーダンスRsは非常に高く無限大に近くな
るので、等価回路は図2(B)に示す如くなり、増幅度
は(2)式に示す如く、gm1×R0 ×gm3×RLと
なり利得は大きくB級の動作をするようになる。
When I 0 > Iref, the transistor T
Since the impedance Rs of r3 is extremely high and approaches infinity, the equivalent circuit is as shown in FIG. 2B, and the gain is gm1 × R 0 × gm3 × RL as shown in equation (2), and the gain is You will be able to perform class B movements.

【0021】次に、図1のトランジスタTr1とTr2
の接続点を切断し、図3(A)に示す如き回路(定電流
源3,4、トランジスタTr3,Tr4関係の図示は省
略してある)とし、入力に直流電圧を入力し、図3
(A)のVpoとVno点の電圧を求めると、図3の
イ,ロに示す静特性となる。
Next, the transistors Tr1 and Tr2 shown in FIG.
3A is cut off to form a circuit as shown in FIG. 3A (constant current sources 3 and 4 and transistors Tr3 and Tr4 are not shown), and a DC voltage is input to the input.
When the voltages at points Vpo and Vno in (A) are obtained, the static characteristics shown in (a) and (b) of FIG. 3 are obtained.

【0022】次に図4(A)に示す如く、トランジスタ
Tr1とTr2の接続点を接続し、入力に直流電圧を入
力し、Voの点の電圧を求めると、図4に示す静特性と
なる。
Next, as shown in FIG. 4A, when the connection points of the transistors Tr1 and Tr2 are connected, a DC voltage is input to the input, and the voltage at the point of Vo is obtained, the static characteristics shown in FIG. 4 are obtained. .

【0023】即ち、不感帯の約2.41V〜2.39V
の間はAB級で、2.41V以下と2.39V以上はB
級を示すプッシュプル特性となる。次に図5(A)に示
す如く、トランジスタTr1とTr2の接続点より、抵
抗R1(5KΩ)を介して、増幅器1,2の、振幅の中
心電圧の2.4Vのバイアスがかけられている入力に負
帰還をかけると、上記接続点の電圧は図5に示す如く略
直線の静特性となり、図6(B)の点線で示す、所望の
特性を得ることが出来る。
That is, the dead zone is about 2.41V to 2.39V.
Is between AB and 2.41V or less and 2.39V or more is B
It has a push-pull characteristic that indicates a grade. Next, as shown in FIG. 5A, a bias of 2.4 V which is the center voltage of the amplitude of the amplifiers 1 and 2 is applied from the connection point of the transistors Tr1 and Tr2 through the resistor R1 (5 KΩ). When negative feedback is applied to the input, the voltage at the connection point has a substantially linear static characteristic as shown in FIG. 5, and the desired characteristic shown by the dotted line in FIG. 6B can be obtained.

【0024】[0024]

【実施例】図1は本発明の実施例の増幅部のブロック
図、図7は本発明の実施例のラインドライバ回路のブロ
ック図、図8は本発明の実施例のラインドライバ回路の
回路図である。
FIG. 1 is a block diagram of an amplifier section of an embodiment of the present invention, FIG. 7 is a block diagram of a line driver circuit of an embodiment of the present invention, and FIG. 8 is a circuit diagram of a line driver circuit of an embodiment of the present invention. Is.

【0025】図1で、トランジスタTr1,Tr3はP
チャネルMOSFET、トランジスタTr2,Tr4は
NチャネルMOSFETとし、増幅器1,2はオペアン
プにて構成し、電源電圧は5V,振幅の中心電圧は2.
4Vとすると、静特性は先に説明せる如く、図4に示す
AB級+B級のプッシュプル特性に負帰還をかけた、図
5に示す、中心電圧は2.4Vを中心にして略直線に延
びた静特性となる。
In FIG. 1, the transistors Tr1 and Tr3 are P
The channel MOSFETs, the transistors Tr2 and Tr4 are N-channel MOSFETs, the amplifiers 1 and 2 are operational amplifiers, the power supply voltage is 5V, and the amplitude center voltage is 2.
Assuming that the static voltage is 4V, as described above, the negative pull is applied to the AB-class + B-class push-pull characteristics shown in FIG. 4, and the center voltage shown in FIG. It has extended static characteristics.

【0026】従って、入力に交流信号を入力すると、低
消費電力で歪みが少ない出力が得られる。図7は全差動
型のラインドライバ回路で、POSTAMP11ー1,
12ー1、トランジスタTr1ー1,Tr2ー1,抵抗
R1ー1、及びPOSTAMP11ー2,12ー2、ト
ランジスタTr1ー2,Tr2ー2,抵抗R1ー2に
て、夫々図5に示す増幅部を構成している。
Therefore, when an AC signal is input to the input, an output with low power consumption and little distortion can be obtained. FIG. 7 shows a fully differential line driver circuit, which includes POSTAMP11-1,
12-1, the transistors Tr1-1, Tr2-1, the resistor R1-1, and the POSTAMPs 112-2, 12-2, the transistors Tr1-2, Tr2-2, and the resistor R1-2, the amplifying unit shown in FIG. 5, respectively. Are configured.

【0027】又入力のIM,IPには、夫々逆位相の信
号を入力し、プリアンプ7にて、夫々位相を反転した信
号を出力し、一方の信号をPOSTAMP11ー1,1
2ー1側に入力し、他方の信号をPOSTAMP11ー
2,12ー2側に入力し、トランジスタTr1ー1,T
r2ー1の接続点の出力のOP点及びトランジスタTr
1ー2,Tr2ー2の接続点の出力のOM点より夫々増
幅した出力を得、OP,OM点間の電圧をトランスを介
して例えば加入者線に出力する。
Further, signals of opposite phases are inputted to the input IM and IP, respectively, and the preamplifier 7 outputs signals of which the phases are inverted, one of the signals being POSTAMP 11-1, 1
2-1 and the other signal is input to the POSTAMP 11-2 and 12-2 side, and the transistors Tr1-1 and T
OP point of output of connection point of r2-1 and transistor Tr
Amplified outputs are obtained from the OM points of the outputs of the connection points of 1-2 and Tr2-2, and the voltage between the OP and OM points is output to, for example, the subscriber line via the transformer.

【0028】更に、ラインドライバ回路内の中心電圧
2.4Vを安定にする為に、OP,OM点間の中心電圧
の2.4Vを、10KΩの抵抗R2,R3を用いて求
め、この電圧を、参照電圧の2.4Vを有する比較器8
に入力し、出力をプリアンプ7及び、コンデンサC5,
抵抗R7、コンデンサC6,抵抗R8を経て、プリアン
プ7の2つの出力に負帰還をかけている。
Further, in order to stabilize the center voltage of 2.4 V in the line driver circuit, the center voltage of 2.4 V between OP and OM points is obtained by using resistors R2 and R3 of 10 KΩ, and this voltage is calculated. , A comparator 8 having a reference voltage of 2.4V
To the preamplifier 7 and the capacitor C5.
Negative feedback is applied to the two outputs of the preamplifier 7 via the resistor R7, the capacitor C6, and the resistor R8.

【0029】又所望の利得が1.7倍の4.6dBであ
る為に、抵抗R4,R5を17KΩ,抵抗R9,R10
を10KΩとして負帰還をかけている。即ち本発明の増
幅部を用いることで、低消費電力で歪みの少ないライン
ドライバ回路を構成することが出来る。
Since the desired gain is 1.7 times 4.6 dB, the resistors R4 and R5 are set to 17 KΩ and the resistors R9 and R10 are set.
Is set to 10 KΩ and negative feedback is applied. That is, by using the amplifier of the present invention, a line driver circuit with low power consumption and little distortion can be configured.

【0030】図8は図7のブロック図に対する回路図
で、同一機能のものは同じ記号で示してあり、図5のV
refに相当するものがバイアス回路のVbとなってい
る。上記は、一導電型トランジスタ,反対導電型トラン
ジスタとして、PチャネルMOSFET,NチャネルM
OSFETを用いて説明したが、PNPトランジスタ,
NPNトランジスタを用いてもよい。
FIG. 8 is a circuit diagram corresponding to the block diagram of FIG. 7, and those having the same function are indicated by the same symbols.
The one corresponding to ref is Vb of the bias circuit. The above is a P-channel MOSFET, N-channel M as one conductivity type transistor and opposite conductivity type transistor.
Although it has been described using the OSFET, the PNP transistor,
NPN transistors may be used.

【0031】[0031]

【発明の効果】以上詳細に説明せる如く本発明によれ
ば、低消費電力で歪みの少ないラインドライバ回路を構
成することが出来る効果がある。
As described in detail above, according to the present invention, it is possible to construct a line driver circuit with low power consumption and little distortion.

【図面の簡単な説明】[Brief description of drawings]

【図1】は本発明の実施例の増幅部のブロック図、FIG. 1 is a block diagram of an amplification unit according to an embodiment of the present invention,

【図2】は図1の増幅部の等価回路及び利得を示す図、FIG. 2 is a diagram showing an equivalent circuit and a gain of the amplifier section of FIG.

【図3】は1例の増幅部の単体の静特性を示す図、FIG. 3 is a diagram showing static characteristics of a single amplifying section,

【図4】は1例の増幅部の負帰還をかけない場合の静特
性を示す図、
FIG. 4 is a diagram showing static characteristics of an amplifier of one example when negative feedback is not applied;

【図5】は1例の増幅部の静特性を示す図、FIG. 5 is a diagram showing static characteristics of an example amplification section;

【図6】は1例のB級プッシュプル,B級+AB級プッ
シュプルの特性図、
FIG. 6 is a characteristic diagram of a class B push-pull, class B + AB class push-pull of one example,

【図7】は本発明の実施例のラインドライバ回路のブロ
ック図、
FIG. 7 is a block diagram of a line driver circuit according to an embodiment of the present invention,

【図8】は本発明の実施例のラインドライバ回路の回路
図、
FIG. 8 is a circuit diagram of a line driver circuit according to an embodiment of the present invention,

【図9】は1例のラインドライバ回路を用いる加入者線
伝送システムのブロック図、
FIG. 9 is a block diagram of a subscriber line transmission system using an example line driver circuit;

【図10】は従来例のラインドライバ回路のブロック図
である。
FIG. 10 is a block diagram of a conventional line driver circuit.

【符号の説明】[Explanation of symbols]

1,2,13,14は増幅器、 3,4は定電流源、 5,6は参照電圧、 7はプリアンプ、 8は比較器、 11ー1,11ー2,12ー1,12ー2はPOSTA
MP、 20,21はディジタル回線終端部、 22は線路終端部、 23は回線終端部、 24は加入者線、 30はラインドライバ回路、 31はハイブリッド、 32は受信部、 R1,R1ー1,R1ー2,R2〜R10,R12〜R
14は抵抗、 C1〜C7はコンデンサ、 Tはトランスを示す。
1, 2, 13, 14 are amplifiers, 3 and 4 are constant current sources, 5 and 6 are reference voltages, 7 is a preamplifier, 8 is a comparator, 11-1, 11-2, 12-1 and 12-2 are POSTA
MP, 20, 21 are digital line terminating units, 22 are line terminating units, 23 are line terminating units, 24 is a subscriber line, 30 is a line driver circuit, 31 is a hybrid, 32 is a receiving unit, R1, R1-1, R1-2, R2-R10, R12-R
Reference numeral 14 is a resistor, C1 to C7 are capacitors, and T is a transformer.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 電源電圧とアース間に、一導電型の第1
のトランジスタ(Tr1)と反対導電型の第2のトラン
ジスタ(Tr2)とを直列に接続し、該接続点を出力と
する回路と、第1の定電流源(3)と、ゲートに第1の
参照電圧(5)を接続した一導電型の第3のトランジス
タ(Tr3)を直列に接続した回路と、ゲートに第2の
参照電圧(6)を接続した反対導電型の第4のトランジ
スタ(Tr4)と、第2の定電流源(4)とを直列に接
続した回路とを挿入し、入力するアナログ信号を、第
1,第2の増幅器(1,2)に入力するようにし、該第
1の増幅器(1)の出力を、該第1のトランジスタ(T
r1)のゲートに接続すると共に、該第1の定電流源
(3)と該第3のトランジスタ(Tr3)との接続点に
接続し、該第2の増幅器(2)の出力を、該第2のトラ
ンジスタ(Tr2)のゲートに接続すると共に、該第4
のトランジスタ(Tr4)と該第2の定電流源(4)と
の接続点に接続し、且つ該第1のトランジスタ(Tr
1)と該第2のトランジスタ(Tr2)との接続点より
抵抗(R1)を介して該第1,第2の増幅器(1,2)
の、振幅の中心電圧(V1)のバイアスが印加されてい
る入力に負帰還をかけたことを特徴とする増幅部。
1. A first of one conductivity type is provided between a power supply voltage and ground.
Circuit (Tr1) and a second transistor (Tr2) of opposite conductivity type are connected in series, and the connection point serves as an output, a first constant current source (3), and a first gate at the gate. A circuit in which a third transistor (Tr3) of one conductivity type connected to the reference voltage (5) is connected in series, and a fourth transistor (Tr4 of the opposite conductivity type in which the second reference voltage (6) is connected to the gate). ) And a circuit in which a second constant current source (4) is connected in series, and an analog signal to be input is input to the first and second amplifiers (1, 2). The output of the first amplifier (1) is connected to the first transistor (T
r1) and the connection point of the first constant current source (3) and the third transistor (Tr3), and the output of the second amplifier (2) The second transistor (Tr2) is connected to the gate of
Connected to a connection point between the second transistor (Tr4) and the second constant current source (4), and the first transistor (Tr4).
1) and the second transistor (Tr2) via a resistor (R1) from the connection point between the first and second amplifiers (1, 2)
2. An amplifier section characterized in that a negative feedback is applied to an input to which a bias of an amplitude center voltage (V1) is applied.
JP5331212A 1993-12-27 1993-12-27 Amplifier Expired - Lifetime JP3052712B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5331212A JP3052712B2 (en) 1993-12-27 1993-12-27 Amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5331212A JP3052712B2 (en) 1993-12-27 1993-12-27 Amplifier

Publications (2)

Publication Number Publication Date
JPH07193439A true JPH07193439A (en) 1995-07-28
JP3052712B2 JP3052712B2 (en) 2000-06-19

Family

ID=18241154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5331212A Expired - Lifetime JP3052712B2 (en) 1993-12-27 1993-12-27 Amplifier

Country Status (1)

Country Link
JP (1) JP3052712B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004040754A1 (en) * 2002-10-31 2004-05-13 Thine Electronics, Inc. Differential circuit and receiver with same
CN112350552A (en) * 2020-10-29 2021-02-09 西安微电子技术研究所 MOSFET driver with output peak current not affected by power supply voltage change

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004040754A1 (en) * 2002-10-31 2004-05-13 Thine Electronics, Inc. Differential circuit and receiver with same
EP1564884A1 (en) * 2002-10-31 2005-08-17 Thine Electronics, Inc. Differential circuit and receiver with same
EP1564884A4 (en) * 2002-10-31 2006-01-18 Thine Electronics Inc Differential circuit and receiver with same
US7339421B2 (en) 2002-10-31 2008-03-04 Thine Electronics, Inc. Differential circuit and receiver with same
CN112350552A (en) * 2020-10-29 2021-02-09 西安微电子技术研究所 MOSFET driver with output peak current not affected by power supply voltage change

Also Published As

Publication number Publication date
JP3052712B2 (en) 2000-06-19

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