JPH07183556A - Manufacture of photoelectric conversion element - Google Patents

Manufacture of photoelectric conversion element

Info

Publication number
JPH07183556A
JPH07183556A JP5328337A JP32833793A JPH07183556A JP H07183556 A JPH07183556 A JP H07183556A JP 5328337 A JP5328337 A JP 5328337A JP 32833793 A JP32833793 A JP 32833793A JP H07183556 A JPH07183556 A JP H07183556A
Authority
JP
Japan
Prior art keywords
electrode
light
groove
processing
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5328337A
Other languages
Japanese (ja)
Other versions
JP2981098B2 (en
Inventor
Sota Moriuchi
荘太 森内
Hiroaki Nakaya
浩明 中弥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5328337A priority Critical patent/JP2981098B2/en
Publication of JPH07183556A publication Critical patent/JPH07183556A/en
Application granted granted Critical
Publication of JP2981098B2 publication Critical patent/JP2981098B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/546Polycrystalline silicon PV cells

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  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To reduce surface reflection and to enhance a short-circuit current by a method wherein a plurality of uneven parts are formed on the surface on the light-receiving face of a semiconductor substrate by an ultrasonic machining method. CONSTITUTION:A plurality of grooves 12 are formed on the surface of a P-type polycrystal silicon substrate 11 by an ultrasonic machining machine. Then, an N-type diffused layer 13 is formed on the surface of the P-type polycrystal silicon substrate 11 on which the grooves 12 have been formed, and a titanium oxide layer as an antireflection film 15 is formed on it. Then, an inessential diffused layer on the rear is removed by an etching operation, and a BSF layer 16 and a rear electrode 17 are then formed by printing and firing an Al paste. Then, a silver paste is printed on a light-receiving face by a screen printing method, it is dried and fired, and a light-receiving-face electrode 18 is formed. At this time, the silver paste is printed in a flat part 19 on which the grooves 12 have not been formed. By the above process, a solar cell element is completed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は表面に凹凸部を有する光
電変換素子の製造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a photoelectric conversion element having a surface with irregularities.

【0002】[0002]

【従来の技術】シリコン太陽電池を例にとって説明す
る。
2. Description of the Related Art A silicon solar cell will be described as an example.

【0003】シリコン太陽電池において、表面への凹凸
部の形成による表面反射の低減は、光電変換効率の高効
率化を図る要素技術の1つとして重要なものとなってい
る。
In a silicon solar cell, reduction of surface reflection due to formation of irregularities on the surface is important as one of the elemental techniques for increasing the photoelectric conversion efficiency.

【0004】従来、単結晶シリコン基板を用いた太陽電
池においては、(100)面を持つ基板を、アルカリ溶
液中でエッチングを行なうことによって、表面にピラミ
ッド状の凹凸が形成できる。また、表面にレジストを塗
布し、これを格子状にパターニングした後、アルカリ溶
液中でエッチングを行なうことによって、逆ピラミッド
状の凹凸が形成できる。
Conventionally, in a solar cell using a single crystal silicon substrate, a substrate having a (100) plane is etched in an alkaline solution to form pyramid-shaped irregularities on the surface. Further, by applying a resist on the surface, patterning the resist in a grid pattern, and then performing etching in an alkaline solution, it is possible to form inverted pyramid-shaped irregularities.

【0005】一方、低コスト化に有効な多結晶シリコン
基板を用いた場合においては、基板内の面方位が様々で
あるため、結晶の面方位に依存するアリカリ溶液中のエ
ッチングでは、均一な凹凸は形成できず、そのため反射
も低減されない。そこで、近年、多結晶シリコンにおい
ては、結晶の面方位に依存せず表面反射を低減する方法
として、表面にV字状またはU字状の断面を持つ溝状の
凹凸を確保する方法が開発されている。溝の加工方法と
しては、表面にレジストを塗布し、パターニングをした
後、エッチングする化学的加工や、レーザビーム,ダイ
シングマシン等を用いた機械的加工が提案されている。
On the other hand, when a polycrystalline silicon substrate effective for cost reduction is used, the plane orientations in the substrate are various, so that uniform etching is performed in etching in an alkaline solution depending on the crystal plane orientation. Cannot be formed, and therefore reflection is not reduced. Therefore, in recent years, in polycrystalline silicon, a method of securing groove-shaped irregularities having a V-shaped or U-shaped cross section on the surface has been developed as a method of reducing surface reflection without depending on the crystal plane orientation. ing. As a method of processing the groove, a chemical processing of applying a resist on the surface, patterning and then etching, or a mechanical processing using a laser beam, a dicing machine or the like has been proposed.

【0006】太陽電池としては、ピラミッド状や溝のよ
うな凹凸が形成された基板に、不純物を拡散することに
よって接合を形成し、次いで受光面と裏面に電極をそれ
ぞれ形成することによって完成する。受光面電極の形成
法としては、蒸着法や金属ペーストのスクリーン印刷法
等があるが、低コスト化を要求される太陽電池において
は、金属ペーストのスクリーン印刷法が一般的である。
A solar cell is completed by forming a junction by diffusing impurities on a substrate on which irregularities such as pyramids and grooves are formed, and then forming electrodes on the light-receiving surface and the back surface, respectively. As a method of forming the light-receiving surface electrode, there are a vapor deposition method, a screen printing method of a metal paste, and the like, but a screen printing method of a metal paste is generally used in a solar cell that requires cost reduction.

【0007】[0007]

【発明が解決しようとする課題】以上のように、面方位
に依存しない凹凸の加工法としては、様々な方法が開発
されている。しかしながら、上記の方法には、反射率低
減の効果,コスト,量産性,受光面電極の占有率等に関
して、何らかの問題があるため、低コストの太陽電池を
量産することは困難であった。以下、これについて詳し
く述べる。
As described above, various methods have been developed as a method of processing unevenness that does not depend on the plane orientation. However, it is difficult to mass-produce a low-cost solar cell because the above method has some problems with respect to the effect of reducing reflectance, cost, mass productivity, occupancy of the light-receiving surface electrode, and the like. This will be described in detail below.

【0008】まず、エッチングによる化学的加工におい
て、アルカリ溶液を用いた異方性エッチングでは、均一
な溝を形成することができず、酸溶液を用いた等方性エ
ッチングでは、エッチングが幅方向にも進行するため、
アスペクト比が低く反射率低減の効果が少ない。さら
に、レジストの塗布工程とパターニング工程というコス
トのかかる工程が必要であることも問題となる。
First, in the chemical processing by etching, uniform grooves cannot be formed by anisotropic etching using an alkaline solution, and in isotropic etching using an acid solution, etching is performed in the width direction. Also progresses,
Low aspect ratio and little effect of reducing reflectance. Further, there is a problem that a costly process such as a resist coating process and a patterning process is required.

【0009】次に、レーザビームにより加工する方法
は、溝の形成は1本ずつとなり、量産性に劣ること、多
数のレーザビームを同時に照射するのは、高価なレーザ
加工機を複数台必要とし、コストがかかることが問題と
なる。
Next, in the method of processing with a laser beam, grooves are formed one by one, which is inferior in mass productivity, and simultaneous irradiation with a large number of laser beams requires a plurality of expensive laser processing machines. However, the problem is that it costs money.

【0010】次に、ダイシングマシンによる加工は、コ
スト的には比較的安価であるが、基板表面の溝は1本な
いしは多くとも十数本ずつしか加工されないため、量産
性の点で十分とはいえない。
Next, the processing by the dicing machine is relatively inexpensive in terms of cost, but since only one groove, or at most ten or more grooves, is processed on the substrate surface, it is not sufficient in terms of mass productivity. I can't say.

【0011】さらに、ダイシングマシンにより加工する
方法では、溝の凹部に沿っての金属ペーストの広がり
や、溝の凸部での金属ペーストの断線が発生しやすいと
いう問題がある。これは、ダイシングマシンにより加工
する方法では、溝が基板全面に形成され、電極直下にも
溝が形成されるためである。電極直下の表面に凹凸があ
る場合には、スクリーン印刷法による電極形成の際に、
金属ペーストが溝の凹部に沿って広がり、そのため、印
刷可能な最小印刷線幅は表面が平坦な場合に比べ太くな
る。その結果、電極占有率は表面が平坦な場合に比べて
増加し、短絡電流が減少する。また、電極面積の増加に
伴って、電極の拡散層への接触面積も増加し、電極近傍
における再結合が増加するため、開放電圧が低下する。
一方、溝の凸部では金属ペーストの断線が発生しやす
く、この場合には曲線因子が大きく低下する。
Further, the method of processing with a dicing machine has a problem that the metal paste is likely to spread along the concave portion of the groove and the metal paste is easily broken at the convex portion of the groove. This is because, in the method of processing with the dicing machine, the groove is formed on the entire surface of the substrate and the groove is formed immediately below the electrode. If there is unevenness on the surface directly below the electrode, when forming the electrode by screen printing,
The metal paste spreads along the concave portion of the groove, so that the minimum printable print line width becomes thicker than that when the surface is flat. As a result, the electrode occupancy increases as compared with the case where the surface is flat, and the short circuit current decreases. Further, as the electrode area increases, the contact area of the electrode with the diffusion layer also increases, and recombination in the vicinity of the electrode increases, so that the open circuit voltage decreases.
On the other hand, disconnection of the metal paste is likely to occur in the convex portion of the groove, and in this case, the fill factor is greatly reduced.

【0012】上述のように、表面への溝状の凹凸部の形
成は表面反射の低減には大きな効果があり、その加工法
としては、様々な方法が開発されているが、実際には、
コストの増加や、量産性に劣ることなどの問題がある。
また、電極直下にも凹部が形成された場合には、受光面
電極ペーストの凹部への広がりによる占有率増加等の問
題点がある。そのため、表面への凹凸部加工が量産工程
に導入された例はない。
As described above, the formation of the groove-shaped irregularities on the surface has a great effect on reducing the surface reflection, and various methods have been developed as the processing method, but in reality,
There are problems such as increased cost and poor mass productivity.
Further, when the recess is formed just below the electrode, there is a problem that the occupation ratio increases due to the spread of the light-receiving surface electrode paste into the recess. Therefore, there is no example in which the processing of the uneven portion on the surface is introduced into the mass production process.

【0013】本発明の目的は、上記問題点を解決し、面
方位に依存しない、溝状の凹凸部の形成による表面反射
の低減によって、短絡電流を向上させた太陽電池を、量
産性に富む方法で製造する方法を提供することにある。
An object of the present invention is to solve the above problems and reduce the surface reflection due to the formation of groove-shaped irregularities, which does not depend on the plane orientation, and has a high productivity for a solar cell having an improved short-circuit current. It is to provide a method of manufacturing by the method.

【0014】[0014]

【課題を解決するための手段】本発明による光電変換素
子の製造方法は、半導体基板の受光面側表面へ複数の凹
凸部を超音波加工法で形成し、さらに、この表面加工に
おいて、反射率低減のための凹凸部の形成を電極形成部
分でない部分に限定し、電極形成部分は溝を形成せず平
面のまま残すか、あるいは平坦な底面をもつ凹部を同時
に形成する。
A method of manufacturing a photoelectric conversion element according to the present invention comprises forming a plurality of irregularities on the surface of a semiconductor substrate on the light receiving surface side by ultrasonic processing, and further, in this surface processing, the reflectance is increased. The formation of the concavo-convex portion for reduction is limited to a portion other than the electrode formation portion, and the electrode formation portion is left as a flat surface without forming a groove, or a concave portion having a flat bottom surface is simultaneously formed.

【0015】[0015]

【作用】超音波加工法では、加工物を面状に一度に加工
することができる。したがって、多数の凹凸部を同時に
加工することができる点で、低コストで量産性に富む方
法である。また、受光面側表面の受光部分に溝を形成
し、同時に電極形成部分に、平面のまま残される部分、
または平坦な底面を持つ受光電極形成用の溝を形成する
ことができる。そのため、溝の凹部への受光面電極ペー
ストの広がりによる占有率増加等の問題は生じない。
In the ultrasonic machining method, the workpiece can be machined into a planar shape at once. Therefore, it is a low cost and highly productive method in that a large number of concavo-convex portions can be processed at the same time. In addition, a groove is formed in the light receiving portion of the light receiving surface side surface, and at the same time, a portion left as a flat surface in the electrode forming portion
Alternatively, a groove for forming a light receiving electrode having a flat bottom surface can be formed. Therefore, problems such as increase in occupancy due to the spread of the light-receiving surface electrode paste in the recesses of the grooves do not occur.

【0016】[0016]

【実施例】以下に本発明の一実施例について説明する。
また、比較のため従来例についても示す。
EXAMPLES An example of the present invention will be described below.
In addition, a conventional example is also shown for comparison.

【0017】図1は、本発明により製造した多結晶シリ
コン太陽電池の斜視図である。P型多結晶シリコン基板
11の表面に後述の図2に示すような超音波加工機によ
り複数の溝12を形成する。
FIG. 1 is a perspective view of a polycrystalline silicon solar cell manufactured according to the present invention. A plurality of grooves 12 are formed on the surface of the P-type polycrystalline silicon substrate 11 by an ultrasonic processing machine as shown in FIG. 2 described later.

【0018】図2は超音波加工機の構成の説明図であ
る。超音波加工機は超音波発振機21,超音波振動子2
2,コーン23,ホーン24,工具25,スラリー(砥
粒を含む加工液)26を供給する砥粒供給装置27およ
び加工テーブル28等からなり、加工テーブル28上に
P型多結晶シリコン基板29が固定される。超音波加工
の原理は、超音波発振機21で発生した高周波を超音波
振動子22にかけて、周波数20〜40KHz、振幅数
μmの超音波振動を発生させる。これを半波長共振する
コーン23およびホーン24を用いて、工具25の先端
で振幅5〜100μmとなるよう振幅拡大する。P型多
結晶シリコン基板29と工具25の先端の間には、スラ
リーを流し込み、工具25に加工圧をかけてP型多結晶
シリコン基板29に押し当てると、砥粒が振動してシリ
コン基板の表面を破砕し、表面は工具25の形状に加工
される。
FIG. 2 is an explanatory view of the configuration of the ultrasonic processing machine. The ultrasonic processing machine is an ultrasonic oscillator 21 and an ultrasonic transducer 2.
2, a cone 23, a horn 24, a tool 25, an abrasive grain supply device 27 for supplying a slurry (a machining liquid containing abrasive grains) 26, a machining table 28, and the like, and a P-type polycrystalline silicon substrate 29 on the machining table 28. Fixed. The principle of ultrasonic processing is to apply the high frequency generated by the ultrasonic oscillator 21 to the ultrasonic oscillator 22 to generate ultrasonic vibration with a frequency of 20 to 40 KHz and an amplitude of several μm. The cone 23 and the horn 24 that resonate at a half wavelength are used to expand the amplitude so that the amplitude becomes 5 to 100 μm at the tip of the tool 25. When a slurry is poured between the P-type polycrystalline silicon substrate 29 and the tip of the tool 25 and a processing pressure is applied to the tool 25 to press it against the P-type polycrystalline silicon substrate 29, the abrasive grains vibrate and the silicon substrate The surface is crushed and the surface is processed into the shape of the tool 25.

【0019】図3は、工具25の先端の加工面の概略の
斜視図であり、図4〜図6は図3の○印の部分の各種の
形状の拡大図である。工具25は、たとえば100mm
角の多結晶シリコン基板を加工できる寸法のものを用い
た。
FIG. 3 is a schematic perspective view of the machined surface of the tip of the tool 25, and FIGS. 4 to 6 are enlarged views of various shapes of the part marked with a circle in FIG. The tool 25 is, for example, 100 mm
The size of the corner polycrystalline silicon substrate was used.

【0020】図4は、溝の断面形状がU字状となるよ
う、工具25先端に、幅40μm、ピッチ100μmで
多数の微小なU字状の突起41を加工した。また、電極
形成部分は加工されずに残るよう、電極の寸法に合わせ
て、2.5mmのピッチで、150μm幅の切欠き42
を入れ、さらに図示されないが、主電極形成部分は1.
5mmの幅で、工具に切欠きを入れた。
In FIG. 4, a large number of minute U-shaped projections 41 having a width of 40 μm and a pitch of 100 μm were processed at the tip of the tool 25 so that the groove has a U-shaped cross section. Further, the notch 42 having a width of 150 μm is formed at a pitch of 2.5 mm in accordance with the dimension of the electrode so that the electrode formation portion remains without being processed.
Although not shown in the figure, the main electrode forming portion is 1.
A notch was made in the tool with a width of 5 mm.

【0021】加工条件として、周波数25〜30K
Z 、発振機出力300〜500W、工具先端での振幅
5〜15μm、加工圧0〜50gfとし、砥粒はボロン
カーバイドあるいはダイヤモンドで粒度が♯500〜♯
1000のものを用い、加工液としては純水を用いた。
As processing conditions, a frequency of 25 to 30K
H Z , oscillator output 300 to 500 W, amplitude at tool tip 5 to 15 μm, processing pressure 0 to 50 gf, abrasive grain is boron carbide or diamond and grain size is # 500 to #
1000 was used, and pure water was used as the working liquid.

【0022】以上の条件で加工を行なったところ、1枚
あたりの加工時間が15秒から2分の時間で、基板上に
深さ50〜100μmの所望形状の溝を加工することが
できた。さらに、電極形成部分は上面を平坦に残すこと
ができた。加工後の溝の寸法は工具の寸法に比べて5〜
20μm程度大きく形成された。これは砥粒の大きさに
よるものである。
When the processing was carried out under the above conditions, a groove having a desired shape having a depth of 50 to 100 μm could be processed on the substrate in a processing time of 15 seconds to 2 minutes per sheet. Further, the upper surface of the electrode formation portion could be left flat. The size of the groove after processing is 5 to 5 compared to the size of the tool.
It was formed to be large by about 20 μm. This is due to the size of the abrasive grains.

【0023】従来例においては、溝はダイシングマシン
によって形成した。このとき、前記の実施例に対応させ
るため、ダイシングマシンのブレードの厚みを50μ
m、溝の深さを70μm、溝のピッチを100μmとし
た。溝のピッチは100μmであるため、100mmの
角の基板へは1000本の溝を形成した。カットスピー
ドを比較的高速である約100mm/sとしたが、ダイ
シングマシンに装着できるブレードは1枚であったの
で、基板1枚当りの加工時間は約20分であった。
In the conventional example, the groove was formed by a dicing machine. At this time, in order to correspond to the above-mentioned embodiment, the blade thickness of the dicing machine is set to 50 μm.
m, the groove depth was 70 μm, and the groove pitch was 100 μm. Since the pitch of the grooves is 100 μm, 1000 grooves were formed on the substrate having a 100 mm corner. Although the cutting speed was set to a relatively high speed of about 100 mm / s, the processing time per substrate was about 20 minutes because only one blade could be mounted on the dicing machine.

【0024】以上の工程によってU字状の溝を形成した
基板を洗浄した後、加工時のダメージ層を除去するた
め、フッ酸と硝酸の混合液によって基板のエッチングを
行なった。
After cleaning the substrate having the U-shaped groove formed by the above steps, the substrate was etched with a mixed solution of hydrofluoric acid and nitric acid in order to remove a damaged layer during processing.

【0025】次に、図1に示されるように、このように
して溝を形成されたP型多結晶シリコン基板11の表面
に、POCl3 を用いたガス拡散によって、N型の拡散
層13を形成し、その表面にパッシベーション層14と
して熱酸化法により薄い熱酸化膜を形成した。その上
に、反射防止膜15として常圧CVDによって酸化チタ
ン膜を形成した。次いでエッチングによって裏面の不要
な拡散層を取り除いた後、BSF層16および裏面電極
17をAlペーストを印刷・焼成することによって形成
した。次いで銀ペーストをスクリーン印刷法によって受
光面に印刷し、これを乾燥・焼成することによって受光
面電極18とした。この際に、銀ペーストは、溝が形成
されていない平坦部19に印刷を行なった。以上の工程
によって本発明による太陽電池素子が完成した。
Next, as shown in FIG. 1, an N-type diffusion layer 13 is formed on the surface of the P-type polycrystalline silicon substrate 11 thus formed with a groove by gas diffusion using POCl 3. Then, a thin thermal oxide film was formed as a passivation layer 14 on the surface by a thermal oxidation method. A titanium oxide film was formed thereon as the antireflection film 15 by atmospheric pressure CVD. Then, after removing the unnecessary diffusion layer on the back surface by etching, the BSF layer 16 and the back surface electrode 17 were formed by printing and firing an Al paste. Next, silver paste was printed on the light-receiving surface by a screen printing method, and this was dried and baked to form the light-receiving surface electrode 18. At this time, the silver paste was printed on the flat portion 19 where the groove was not formed. Through the above steps, the solar cell element according to the present invention is completed.

【0026】本実施例により作製した太陽電池の光電変
換特性を、従来例により作製した太陽電池の特性と合わ
せて次の表1に示す。
The photoelectric conversion characteristics of the solar cell manufactured by this example are shown in the following Table 1 together with the characteristics of the solar cell manufactured by the conventional example.

【0027】[0027]

【表1】 [Table 1]

【0028】本実施例により作製した太陽電池は、従来
例により作製した太陽電池に比べると、短絡電流,開放
電圧,曲線因子ともに向上しており、これは、電極の占
有率および接触面積の低減がなされ、かつペーストの断
線等が発生していないことを示すものである。
The solar cell manufactured according to the present example has improved short-circuit current, open-circuit voltage and fill factor as compared with the solar cell manufactured according to the conventional example, which means that the occupancy rate of electrodes and the contact area are reduced. And that there is no disconnection of the paste.

【0029】図5は、工具先端のU字状の突起51の形
状,幅,ピッチは図4に示されるものと同様であるが、
基板の電極形成部分には底面が平坦な溝が加工されるよ
うに、電極の寸法に合わせて、工具に2.5mmのピッ
チで、150μm幅の凸部分52を加工し、さらに図示
されない主電極形成部分は1.5mmの幅で凸部分を加
工した。
In FIG. 5, the shape, width and pitch of the U-shaped projection 51 at the tip of the tool are the same as those shown in FIG.
In order to form a groove having a flat bottom surface on the electrode formation portion of the substrate, a convex portion 52 of 150 μm width is formed on the tool at a pitch of 2.5 mm according to the size of the electrode, and a main electrode (not shown) is formed. The formed portion was formed by processing a convex portion with a width of 1.5 mm.

【0030】前述の実施例と同様の条件で加工を行なっ
たところ、1枚当りの加工時間が15秒から2分の時間
で、基板上に深さ50〜100μmの所望形状の溝を加
工することができ、さらに、電極形成部分は底面が平坦
な溝を加工することができた。この後、前述の実施例と
同様の工程によって、太陽電池を作製した。ただし、受
光面側電極を形成する際には、銀ペーストは、底部が平
坦な溝が形成された部分に印刷を行なった。本実施例に
おいても、前述の実施例と同様に従来より短絡電流,開
放電圧,曲線因子ともに上回る特性を得た。
When processing was carried out under the same conditions as in the above-mentioned embodiment, a groove having a desired shape with a depth of 50 to 100 μm was formed on the substrate in a processing time of 15 seconds to 2 minutes per sheet. In addition, a groove having a flat bottom surface could be processed in the electrode formation portion. After that, a solar cell was manufactured by the same steps as those in the above-described example. However, when forming the light-receiving surface side electrode, the silver paste was printed on a portion where a groove having a flat bottom was formed. Also in this embodiment, similar to the above-mentioned embodiments, the characteristics in which the short circuit current, the open circuit voltage, and the fill factor are higher than those of the conventional ones are obtained.

【0031】図6は、溝の断面形状がV字状となるよ
う、工具先端に、先端角度50°、ピッチ100μmで
多数の微小なV字状の突起61を加工した。電極形成部
分が加工されずに残るように、電極の寸法に合わせて、
2.5mmのピッチで、150μm幅の切欠き62を入
れ、さらに図示されない主電極形成部分は1.5mmの
幅で工具に切欠きを入れた。前述の実施例と同様の条件
で加工を行なったところ、1枚当りの加工時間が30秒
で、基板に深さ50〜100μmの所望形状の溝を加工
することができ、さらに、電極形成部分は、上面が平坦
になるように残すことができた。この後前述の実施例と
同様の工程によって、太陽電池を作製した。この場合も
同様に従来例より短絡電流,開放電圧,曲線因子ともに
上回る特性を得た。
In FIG. 6, a large number of minute V-shaped projections 61 are formed at the tip of the tool at a tip angle of 50 ° and a pitch of 100 μm so that the groove has a V-shaped cross section. According to the dimensions of the electrode, so that the electrode formation part remains unprocessed,
Notches 62 having a width of 150 μm were formed at a pitch of 2.5 mm, and not-shown main electrode forming portions were notched in the tool with a width of 1.5 mm. When the processing was performed under the same conditions as in the above-mentioned embodiment, the processing time per sheet was 30 seconds, and a groove having a desired shape with a depth of 50 to 100 μm could be processed in the substrate. Could be left with a flat top surface. After this, a solar cell was produced by the same steps as those in the above-mentioned examples. In this case as well, similar characteristics to the conventional example were obtained in terms of short circuit current, open circuit voltage, and fill factor.

【0032】前述の実施例は多結晶シリコン基板の場合
について述べたが、単結晶シリコン基板または他の半導
体基板の場合にも応用できる。
Although the above embodiments have been described with reference to a polycrystalline silicon substrate, they can be applied to a single crystal silicon substrate or another semiconductor substrate.

【0033】[0033]

【発明の効果】本発明によれば、半導体基板に、反射低
減のための表面の凹凸を、基板の面方位に依存せず、し
かも安価な装置を用いて高速で形成することができ、そ
の結果、量産プロセスにおいて従来より高効率の太陽電
池を得ることができる。なお、ここでは実用性の観点か
ら表面の凹凸としては、断面がU字状やV字状の溝を例
として説明したが、工具の加工により、その他の断面形
状の溝や、ピラミッド状の凹凸なども高速で加工でき、
表面反射率の低減に効果があることは自明である。
According to the present invention, surface irregularities for reducing reflection can be formed on a semiconductor substrate at a high speed by using an inexpensive device which does not depend on the plane orientation of the substrate. As a result, it is possible to obtain a solar cell having a higher efficiency than ever before in a mass production process. Here, from the viewpoint of practicality, the surface unevenness has been described by taking a groove having a U-shaped or V-shaped cross section as an example, but a groove having another cross-sectional shape or a pyramid-shaped unevenness is formed by machining a tool. Can be processed at high speed,
It is obvious that it is effective in reducing the surface reflectance.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明により製作した太陽電池の一例の斜視図
である。
FIG. 1 is a perspective view of an example of a solar cell manufactured according to the present invention.

【図2】超音波加工機の構成図である。FIG. 2 is a configuration diagram of an ultrasonic processing machine.

【図3】超音波加工機の工具の先端の斜視図である。FIG. 3 is a perspective view of a tip of a tool of an ultrasonic processing machine.

【図4】工具加工面の一部の拡大図である。FIG. 4 is an enlarged view of a part of a tool processing surface.

【図5】工具加工面の一部の拡大図である。FIG. 5 is an enlarged view of a part of a tool processing surface.

【図6】工具加工面の一部の拡大図である。FIG. 6 is an enlarged view of a part of a tool processing surface.

【符号の説明】[Explanation of symbols]

11 P型多結晶シリコン基板 12 溝 13 N型拡散層 14 パッシベーション層 15 反射防止膜 16 BSF層 17 裏面電極 18 受光面電極 19 平坦部 11 P-type polycrystalline silicon substrate 12 Groove 13 N-type diffusion layer 14 Passivation layer 15 Antireflection film 16 BSF layer 17 Backside electrode 18 Light-receiving surface electrode 19 Flat part

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 半導体基板の受光面側表面に複数の凹凸
部を超音波加工法で形成することを特徴とする光電変換
素子の製造方法。
1. A method for manufacturing a photoelectric conversion element, which comprises forming a plurality of irregularities on the light-receiving surface side of a semiconductor substrate by ultrasonic processing.
【請求項2】 凹部を受光面側表面の電極形成部分でな
い部分に形成し、電極形成部分は凹部を形成せず平面の
まま残すことを特徴とする請求項1記載の光電変換素子
の製造方法。
2. The method for manufacturing a photoelectric conversion element according to claim 1, wherein the concave portion is formed in a portion of the light receiving surface side surface which is not the electrode forming portion, and the electrode forming portion is left as a flat surface without forming the concave portion. .
【請求項3】 底面が平坦でない凹部を受光面側の表面
の電極形成部分でない部分に形成し、電極形成部分は平
坦な底面を持つ凹部を同時に形成することを特徴とする
請求項1記載の光電変換素子の製造方法。
3. The recess according to claim 1, wherein a recess having an uneven bottom surface is formed in a portion of the surface on the light-receiving surface side which is not an electrode forming portion, and the electrode forming portion simultaneously forms a recess having a flat bottom surface. Method for manufacturing photoelectric conversion element.
JP5328337A 1993-12-24 1993-12-24 Method for manufacturing photoelectric conversion element Expired - Fee Related JP2981098B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5328337A JP2981098B2 (en) 1993-12-24 1993-12-24 Method for manufacturing photoelectric conversion element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5328337A JP2981098B2 (en) 1993-12-24 1993-12-24 Method for manufacturing photoelectric conversion element

Publications (2)

Publication Number Publication Date
JPH07183556A true JPH07183556A (en) 1995-07-21
JP2981098B2 JP2981098B2 (en) 1999-11-22

Family

ID=18209113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5328337A Expired - Fee Related JP2981098B2 (en) 1993-12-24 1993-12-24 Method for manufacturing photoelectric conversion element

Country Status (1)

Country Link
JP (1) JP2981098B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020072736A (en) * 2001-03-12 2002-09-18 (주)솔라사인 Crystalline silicon solar cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020072736A (en) * 2001-03-12 2002-09-18 (주)솔라사인 Crystalline silicon solar cell

Also Published As

Publication number Publication date
JP2981098B2 (en) 1999-11-22

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