JPH07167604A - Position-detecting sensor in fine movement - Google Patents

Position-detecting sensor in fine movement

Info

Publication number
JPH07167604A
JPH07167604A JP34214393A JP34214393A JPH07167604A JP H07167604 A JPH07167604 A JP H07167604A JP 34214393 A JP34214393 A JP 34214393A JP 34214393 A JP34214393 A JP 34214393A JP H07167604 A JPH07167604 A JP H07167604A
Authority
JP
Japan
Prior art keywords
electret
electrode
fine
large number
charging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34214393A
Other languages
Japanese (ja)
Inventor
Masahiko Sakai
正彦 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ono Sokki Co Ltd
Original Assignee
Ono Sokki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ono Sokki Co Ltd filed Critical Ono Sokki Co Ltd
Priority to JP34214393A priority Critical patent/JPH07167604A/en
Publication of JPH07167604A publication Critical patent/JPH07167604A/en
Pending legal-status Critical Current

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  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)

Abstract

PURPOSE:To provide a position detection sensor which allows detecting position in a movement of 1mum or less. CONSTITUTION:The sensor consists of an electret 1 containing numerous charged electrons, with fine intervals, 4a, 4b,..., and a comb-like electrode 2, corresponding to the electret 1 with a specified spacing, wherein electric charge and discharge repeatedly occurring, due to induction from the charged electrons, on numerous teeth 5e, 5f,... provided at the positions facing the charged electrons at relative movement to the electret 1 is converted into potential change for position detection caused by relative movement, for outputting.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、速度計、エンコ−ダ等
に使用される位置検出センサ−に関し、特に微細位置、
微少移動量の検出が可能な微細位置検出センサ−に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a position detecting sensor used in a speedometer, an encoder, etc.
The present invention relates to a fine position detection sensor capable of detecting a minute movement amount.

【0002】[0002]

【従来の技術】図4は従来のリニアゲ−ジセンサの斜視
図であり、スピンドルと一体に移動する移動スリットと
一定位置に固定された固定スリットを設け、一方に光源
(LED)と反対側にフォトトランジスタを配置した位
置検出センサ−を使用して、モアレ縞の移動による明暗
変化をフォトトランジスタによって電気信号に変換し、
スリット数に対応する出力パルスより位置移動量を計測
している。
2. Description of the Related Art FIG. 4 is a perspective view of a conventional linear gauge sensor. It is provided with a moving slit which moves integrally with a spindle and a fixed slit which is fixed at a fixed position. Using the position detection sensor with the transistor arranged, the phototransistor converts the light-dark change due to the movement of the moire fringes into an electric signal,
The position movement amount is measured from the output pulse corresponding to the number of slits.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、このよ
うな従来の位置検出センサ−では、スリット板の変位量
をスリット数に対応した出力パルスにより検出している
ので、分解能はスリットピッチによって決まってしま
い、従来技術によればスリットピッチは4〜10μm程
度が限度であって、信号内挿処理等の信号処理技術を併
用しても微細レベルまで改善することは不可能である。
また、高分解能の光学的回析を利用する方式のものでも
1μm程度までしか微細化できていない。こうした現状
から、最近特に高まっている高精度な位置決め、軌跡制
御を可能にする高分解能の速度計やエンコ−ダ等の要求
に対応できないという問題があった。
However, in such a conventional position detecting sensor, since the displacement amount of the slit plate is detected by the output pulse corresponding to the number of slits, the resolution is determined by the slit pitch. According to the conventional technology, the slit pitch is limited to about 4 to 10 μm, and it is impossible to improve the level to a fine level even when the signal processing technology such as signal interpolation processing is used together.
Further, even a system utilizing high-resolution optical diffraction can be miniaturized up to about 1 μm. Under these circumstances, there has been a problem in that it is not possible to meet the demands for high-resolution speedometers and encoders that enable particularly high-precision positioning and trajectory control that have recently been increasing.

【0004】本発明は上述の問題点に鑑みてなされたも
のであり、スリットピッチに対応する分解能を1μm以
下の分子レベル迄微細化できる高精度の微細位置検出セ
ンサ−を提供することを目的とする。
The present invention has been made in view of the above problems, and an object of the present invention is to provide a highly accurate fine position detecting sensor capable of making the resolution corresponding to the slit pitch fine to a molecular level of 1 μm or less. To do.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
に、本発明の微細位置検出センサ−は、速度計およびエ
ンコ−ダ等に使用される位置検出センサ−において、微
細な間隔で帯電させた多数の表面電荷を有するエレクト
レットと、該エレクトレットと所定間隔で相対し前記エ
レクトレットとの水平方向相対移動時に前記表面電荷に
対向する位置に設けた多数のくし歯上で繰り返し生ずる
帯電・放電を位置検出用の電位変化に変換出力するくし
歯状電極を備えている。
In order to achieve the above object, the fine position detecting sensor of the present invention is a position detecting sensor used for a speedometer, an encoder, etc., and is charged at fine intervals. The electret having a large number of surface charges, and the charging / discharging that repeatedly occurs on a large number of comb teeth provided at a position facing the electret at a predetermined interval and facing the surface charge when horizontally moving relative to the electret. It is provided with a comb-teeth-shaped electrode that converts and outputs a potential change for detection.

【0006】また、速度計およびエンコ−ダ等に使用さ
れる位置検出センサ−において、シリコンウェハ上に堆
積させたSiO2層表面の金属膜蒸着部分により分離さ
れるSiO2層露出部分に微細間隔の多数の帯電電極を
形成した固定電極板と、前記固定電極板と所定間隔で相
対するガラス板上の前記帯電電極に対向する位置に前記
帯電電極と同一間隔を持つ多数の検出電極を蒸着し水平
方向移動時に前記検出電極上で発生する位置検出用の周
期的な電圧信号を出力する移動電極板を備えている。
Further, in a position detecting sensor used for a speedometer, an encoder, etc., a fine gap is provided at an exposed portion of the SiO 2 layer separated by a metal film vapor deposition portion on the surface of the SiO 2 layer deposited on a silicon wafer. A fixed electrode plate having a large number of charging electrodes formed thereon, and a large number of detection electrodes having the same intervals as the charging electrodes at a position facing the charging electrodes on a glass plate facing the fixed electrode plate at a predetermined interval. A moving electrode plate is provided which outputs a periodic voltage signal for position detection generated on the detection electrode when moving in the horizontal direction.

【0007】[0007]

【作用】上記構成によれば、帯電させた微細間隔のエレ
クトレッ上の表面電荷に対応する位置に、くし歯を設け
たくし歯状電極とエレクトレットの間に水平方向の相対
移動があると、移動に対応してくし歯上で表面電荷によ
り繰り返し生ずる帯電・放電を、電位変化に変換して出
力するので、微細位置検出が可能になる。
According to the above structure, when there is relative movement in the horizontal direction between the comb-teeth-shaped electrode provided with the comb teeth and the electret at the position corresponding to the surface charge on the electret with the minute intervals charged, the movement is caused. Correspondingly, the charging / discharging that is repeatedly generated on the comb tooth due to the surface charge is converted into a potential change and output, so that fine position detection becomes possible.

【0008】あるいは、シリコンウェハ上のSiO2
表面を、金属膜で分離し露出部分を帯電させて微細間隔
の多数の帯電電極を形成した固定電極板と、ガラス板に
固定電極板上の帯電電極と対向し同間隔を有する多数の
検出電極を蒸着させた移動電極板とを、所定間隔で対向
させて設置し移動電極板が水平方向へ移動した際に、多
数の検出電極上で帯電電極によって発生する位置検出用
の周期的な電圧信号を出力するので、微細位置検出が可
能になる。
Alternatively, the surface of the SiO 2 layer on a silicon wafer is separated by a metal film, and the exposed portion is charged to form a large number of charging electrodes with fine intervals, and a glass plate is charged on the fixed electrode plate. A moving electrode plate, which is opposed to the electrode and has a large number of detection electrodes vapor-deposited at the same interval, is installed so as to face each other at a predetermined interval, and when the moving electrode plate moves in the horizontal direction, a charging electrode is placed on the large number of detection electrodes. Since a periodic voltage signal for position detection generated by is output, fine position detection becomes possible.

【0009】[0009]

【実施例】以下本発明の一実施例を図に基づいて説明す
る。
An embodiment of the present invention will be described below with reference to the drawings.

【0010】図1は本発明の位置実施例に係る微細位置
検出センサ−の斜視図である。
FIG. 1 is a perspective view of a fine position detecting sensor according to a position embodiment of the present invention.

【0011】図1に示す実施例は、X(水平)方向に対
しY方向向きに、1μm以下の分子レベルピッチP1で
チャ−ジされた多数の表面電荷4a、b、c、d…によ
るエレクトレット1と、エレクトレット1の表面電荷4
a、b、c、d…と相対する位置に、ピッチP1と同列
ピッチP2で配置される多数の金属くし歯5e、f、
g、h…を持つくし歯状電極2と、くし歯状電極2にエ
レクトレット1の電荷により発生するチャ−ジの平均電
位を検出するための検出用抵抗R3とでなり、エレクト
レット1と、くし歯状電極2はX方向に所定間隔で対向
するコンデンサ状に配置される。
In the embodiment shown in FIG. 1, an electret is formed by a large number of surface charges 4a, b, c, d ... Charged in the Y direction with respect to the X (horizontal) direction at a molecular level pitch P1 of 1 μm or less. 1 and the surface charge 4 of the electret 1
A large number of metal comb teeth 5e, f, which are arranged at a pitch P1 and a pitch P2 in the same row at positions facing a, b, c, d ...
It is composed of a comb-shaped electrode 2 having g, h ..., and a detection resistor R3 for detecting the average potential of the charge generated in the comb-shaped electrode 2 by the charge of the electret 1, and the electret 1 and the comb. The tooth-shaped electrodes 2 are arranged in a capacitor shape facing each other at a predetermined interval in the X direction.

【0012】つぎに、動作について説明する。Next, the operation will be described.

【0013】エレクトレット1は、高分子材料のPVD
F(ポリフッ化ビニリデン)、FEP(4フッ化エチレ
ン6フッ化プロピレン共重合体)、PTFE(4フッ化
エチレン)等を素材として、高温下でこれらの素材に電
界をかけ、そのまま常温まで冷却するサ−モ法、常温下
で素材に電界をかけコロナ放電させるコロナ法、真空中
で素材に電子線を照射する電子ビ−ム法、などによって
チャ−ジして作成するものであり、特に電子ビ−ム法の
場合は走査により素材上に微細ピッチのチャ−ジライン
を引くことができる。こうして一旦チャ−ジされると電
界を取り除いてもそのまま静電力を保持する。
The electret 1 is made of a polymer material PVD.
Using F (polyvinylidene fluoride), FEP (tetrafluoroethylene hexafluoropropylene copolymer), PTFE (tetrafluoroethylene), etc. as a material, an electric field is applied to these materials at high temperature, and the material is cooled to room temperature as it is. It is created by charging using a thermo method, a corona method of applying an electric field to the material at room temperature to cause a corona discharge, or an electron beam method of irradiating the material with an electron beam in a vacuum. In the case of the beam method, fine-pitch charge lines can be drawn on the material by scanning. In this way, once charged, the electrostatic force is maintained even if the electric field is removed.

【0014】エレクトレット1と所定間隔で対向するく
し歯状電極2の材質は、エレクトレット1の静電界を拾
える金属体であればよく、保持する所定間隔はチャ−ジ
されるエレクトレット1の静電力と、くし歯状電極2か
らの必要検出レベルによって任意に決まる。
The material of the comb-teeth-shaped electrode 2 facing the electret 1 at a predetermined interval may be a metal body capable of picking up the electrostatic field of the electret 1, and the predetermined interval to be held is the electrostatic force of the electret 1 to be charged. , It is arbitrarily determined by the required detection level from the comb-teeth-shaped electrode 2.

【0015】いまエレクトレット1と、くし歯状電極2
の間にX方向の相対移動があると、各ピッチ毎(P1、
P2相当)くし歯5e、f、g、h…上に、エレクトレ
ット1の表面電荷の誘導によるチャ−ジとディスチャ−
ジが繰り返されるため、抵抗R3の両端電圧変化を検出
することにより分子レベルの微細位置検出デ−タが得ら
れる。この検出デ−タをF−V変換、方向弁別、信号内
挿等の通常構成で処理することにより、分子レベルの高
分解能速度計、エンコ−ダ等を構成できる。
Now, the electret 1 and the comb-shaped electrode 2
If there is relative movement in the X direction between the pitches (P1, P1,
(Equivalent to P2) Charge and discharge due to induction of surface charge of the electret 1 on the comb teeth 5e, f, g, h ...
Since the error is repeated, the fine position detection data at the molecular level can be obtained by detecting the voltage change across the resistor R3. By processing this detection data with a normal configuration such as FV conversion, direction discrimination, and signal interpolation, a high resolution speedometer at the molecular level, an encoder, etc. can be constructed.

【0016】この場合、移動する移動体はエレクトレッ
ト1か、くし歯状電極2のどちらかにすればよい。
In this case, the moving body may be either the electret 1 or the comb-shaped electrode 2.

【0017】また、図1ではエレクトレッ1をリニア方
式で示しているが、図2のように円板型のエレクトレッ
ト10にして、電極側も同形状に対応させれば微細回転
角検出用のロ−タリ−方式に転用できることは自明であ
る。
Further, although the electret 1 is shown in a linear system in FIG. 1, if a disc type electret 10 is used as shown in FIG. -It is obvious that it can be transferred to the tally system.

【0018】このような本実施例は従来の光学式、磁気
式に比較して、変位量を直接電気量として検出できるの
で信号処理が著しく簡素化される。エレクトレット1の
チャ−ジに電子ビ−ム法を用いれば、電荷ピッチを分子
レベル迄細かく刻むことができるので、分子レベルの高
分解能のシステムの構成が可能になる。光学式、磁気式
と同様な通常の信号処理による方向判別、逓倍等により
さらに高分解能にできる。殆ど電力を消費しないセンサ
−を使用するので、電源装置の収納スペ−スが無い場合
や、重量制限がある場合等に効果的な、低消費電力の微
細位置制御装置を構成することができる。
In this embodiment, as compared with the conventional optical type and magnetic type, the displacement amount can be directly detected as the electric amount, so that the signal processing is remarkably simplified. If the electron beam method is used for the charge of the electret 1, the charge pitch can be finely cut down to the molecular level, so that a high-resolution system at the molecular level can be constructed. Higher resolution can be achieved by directional discrimination, multiplication, etc. by ordinary signal processing similar to the optical type and magnetic type. Since the sensor that consumes almost no power is used, it is possible to configure a low power consumption fine position control device that is effective when there is no space for accommodating the power supply device or when there is a weight limit.

【0019】図3は本発明の第2実施例に係る微細位置
検出センサ−の構成図である。
FIG. 3 is a block diagram of a fine position detecting sensor according to the second embodiment of the present invention.

【0020】第2実施例では、図3のようにシリコンウ
ェハ43上にSiO2層44をCVD法により堆積さ
せ、その上にハシゴ状のマスクを置きアルミ等の金属膜
45を蒸着して電極分離帯としたのち、SiO2層44
の残った露出部分をコロナ放電等の方法によりチャ−ジ
ングして、1μm以下の微細ピッチPのチャ−ジ電極4
6を形成して固定電極板41を作成する。
In the second embodiment, as shown in FIG. 3, a SiO 2 layer 44 is deposited on a silicon wafer 43 by a CVD method, a ladder-shaped mask is placed on the SiO 2 layer 44, and a metal film 45 such as aluminum is vapor-deposited on the electrode. After the separation band, the SiO 2 layer 44
The remaining exposed portion of the electrode is charged by a method such as corona discharge to charge electrode 4 with fine pitch P of 1 μm or less.
6 is formed to form the fixed electrode plate 41.

【0021】一方、電気的絶縁体板、例えばガラス板4
7上に固定電極1のチャ−ジ電極46と同ピッチPの検
出電極48を蒸着した移動電極板42を作成し、固定電
極板41と所定間隔を保ちチャ−ジ電極46と検出電極
48が丁度対向するように、コンデンサ型に重ねて設置
する。
On the other hand, an electrically insulating plate such as a glass plate 4
A moving electrode plate 42 is formed by vapor-depositing the detection electrodes 48 having the same pitch P as the charge electrodes 46 of the fixed electrode 1 on the movable electrode plate 7, and the charge electrode 46 and the detection electrodes 48 are kept at a predetermined distance from the fixed electrode plate 41. The capacitors are placed on top of each other so that they face each other.

【0022】いま、移動電極板42が矢印方向に移動す
ると、前実施例の場合と同様に固定電極板41のチャ−
ジ電極46より、移動電極板42の検出電極48に誘導
される電位変化によって周期的な電圧信号が発生する。
この電圧デ−タ、周波数デ−タを読み取り前実施例と同
様に微細レベルの高分解能速度計、エンコ−ダ等を構成
できる。
Now, when the movable electrode plate 42 moves in the direction of the arrow, the charge of the fixed electrode plate 41 is changed to the same as in the previous embodiment.
A periodic voltage signal is generated by the di-electrode 46 due to the potential change induced in the detection electrode 48 of the moving electrode plate 42.
This voltage data and frequency data are read, and a fine level high resolution speedometer, encoder, etc. can be constructed as in the previous embodiment.

【0023】[0023]

【発明の効果】以上説明したように、本発明によれば、
微細な間隔で電荷チャ−ジしたエレクトレットに、その
チャ−ジ電荷に対応する誘導用くし歯を設けたくし歯状
電極を対向させて、相対移動時に誘導によって生ずる帯
電・放電を位置検出用の電位変化に変換出力するように
構成し、あるいは、シリコンウェハ上のSiO2層表面
に微細間隔の帯電電極を形成した固定電極板に、電気的
絶縁体板上の帯電電極と対向位置に同間隔の検出電極を
形成した移動電極板を対向させ、移動時に検出電極に誘
導する位置検出用の周期的な電圧信号を出力するように
構成したので、1μm以下の微細レベルの高分解能速度
計、エンコ−ダ等を構成することが可能になる。信号処
理が著しく簡素化される。低消費電力の速度計、エンコ
−ダ等を構成できる。
As described above, according to the present invention,
The electret, which has been charged with charge at minute intervals, is made to face the comb-shaped electrode provided with the comb teeth for induction corresponding to the charge, and the charge / discharge generated by induction during relative movement is detected as the potential for position detection. A fixed electrode plate that is configured to convert and output the change, or has a charging electrode with a fine interval formed on the surface of the SiO 2 layer on the silicon wafer, and the charging electrode on the electrical insulator plate has the same interval at a position facing the charging electrode. Since the moving electrode plates on which the detection electrodes are formed are opposed to each other and a periodic voltage signal for position detection that is induced to the detection electrodes is output during movement, a high-resolution speedometer with a fine level of 1 μm or less, an encoder It becomes possible to configure the da etc. Signal processing is significantly simplified. A low power consumption speedometer, encoder, etc. can be configured.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例に係る微細位置検出センサ−
の斜視図である。
FIG. 1 is a fine position detection sensor according to an embodiment of the present invention.
FIG.

【図2】本発明の円板型エレクトレットの説明図であ
る。
FIG. 2 is an explanatory view of a disc type electret of the present invention.

【図3】本発明の第2実施例に係る微細位置検出センサ
−の構成図である。
FIG. 3 is a configuration diagram of a fine position detection sensor according to a second embodiment of the present invention.

【図4】従来のリニアゲ−ジセンサの斜視図である。FIG. 4 is a perspective view of a conventional linear gauge sensor.

【符号の説明】[Explanation of symbols]

1 エレクトレット 2 くし歯状電極 3 検出用抵抗R 4 表面電荷 5 くし歯 10 円板型エレクトレット 41 固定電極板 42 移動電極板 43 シリコンウェハ 44 SiO2 45 金属膜 46 帯電電極 47 ガラス板 48 検出電極1 Electret 2 Comb Toothed Electrode 3 Detection Resistor R 4 Surface Charge 5 Comb Tooth 10 Disc Electret 41 Fixed Electrode Plate 42 Moving Electrode Plate 43 Silicon Wafer 44 SiO 2 45 Metal Film 46 Charging Electrode 47 Glass Plate 48 Detection Electrode

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 速度計およびエンコ−ダ等に使用される
位置検出センサ−において、 微細な間隔で帯電させた多数の表面電荷を有するエレク
トレットと、該エレクトレットと所定間隔で相対し前記
エレクトレットとの水平方向相対移動時に前記表面電荷
に対向する位置に設けた多数のくし歯上で繰り返し生ず
る帯電・放電を位置検出用の電位変化に変換出力するく
し歯状電極を備えたことを特徴とする微細位置検出セン
サ−。
1. A position detecting sensor used for a speedometer, an encoder, etc., comprising: an electret having a large number of surface charges charged at minute intervals, and the electret facing the electret at a predetermined interval. A fine feature characterized by comprising a comb-shaped electrode for converting and outputting charging / discharging repeatedly generated on a large number of comb teeth provided at positions opposed to the surface charges during relative movement in the horizontal direction into potential changes for position detection. Position detection sensor.
【請求項2】 速度計およびエンコ−ダ等に使用される
位置検出センサ−において、 シリコンウェハ上に堆積させたSiO2層表面の金属膜
蒸着部分により分離されるSiO2層露出部分に微細間
隔の多数の帯電電極を形成した固定電極板と、前記固定
電極板と所定間隔で相対する電気的絶縁体板上の前記帯
電電極に対向する位置に前記帯電電極と同一間隔を持つ
多数の検出電極を蒸着し水平方向移動時に前記検出電極
上で発生する位置検出用の周期的な電圧信号を出力する
移動電極板を備えたことを特徴とする微細位置検出セン
サ−。
2. A position detecting sensor used for a speedometer, an encoder, etc., wherein a fine interval is provided between exposed portions of the SiO 2 layer separated by a metal film deposition portion on the surface of the SiO 2 layer deposited on a silicon wafer. Fixed electrode plate on which a large number of charging electrodes are formed, and a large number of detection electrodes having the same interval as the charging electrode at a position facing the charging electrode on an electrical insulator plate facing the fixed electrode plate at a predetermined interval. A fine position detecting sensor, comprising: a moving electrode plate for vapor-depositing and outputting a periodic voltage signal for position detection generated on the detecting electrode when moving in the horizontal direction.
JP34214393A 1993-12-14 1993-12-14 Position-detecting sensor in fine movement Pending JPH07167604A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34214393A JPH07167604A (en) 1993-12-14 1993-12-14 Position-detecting sensor in fine movement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34214393A JPH07167604A (en) 1993-12-14 1993-12-14 Position-detecting sensor in fine movement

Publications (1)

Publication Number Publication Date
JPH07167604A true JPH07167604A (en) 1995-07-04

Family

ID=18351463

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34214393A Pending JPH07167604A (en) 1993-12-14 1993-12-14 Position-detecting sensor in fine movement

Country Status (1)

Country Link
JP (1) JPH07167604A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107677198A (en) * 2017-10-31 2018-02-09 深圳市柔纬联科技有限公司 The self-driven closely position detector of electret
JP2019049183A (en) * 2017-09-11 2019-03-28 ニエン メイド エンタープライズ カンパニー リミテッドNien Made Enterprise Co., Ltd. Control system for window shutter
CN113932836A (en) * 2020-07-14 2022-01-14 昆山微电子技术研究院 Non-contact spatial position sensing device based on electret

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019049183A (en) * 2017-09-11 2019-03-28 ニエン メイド エンタープライズ カンパニー リミテッドNien Made Enterprise Co., Ltd. Control system for window shutter
CN107677198A (en) * 2017-10-31 2018-02-09 深圳市柔纬联科技有限公司 The self-driven closely position detector of electret
CN113932836A (en) * 2020-07-14 2022-01-14 昆山微电子技术研究院 Non-contact spatial position sensing device based on electret
CN113932836B (en) * 2020-07-14 2024-04-05 昆山微电子技术研究院 Non-contact type spatial position sensing device based on electrets

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