JPH07161774A - Circuit forming method - Google Patents

Circuit forming method

Info

Publication number
JPH07161774A
JPH07161774A JP30908493A JP30908493A JPH07161774A JP H07161774 A JPH07161774 A JP H07161774A JP 30908493 A JP30908493 A JP 30908493A JP 30908493 A JP30908493 A JP 30908493A JP H07161774 A JPH07161774 A JP H07161774A
Authority
JP
Japan
Prior art keywords
polyimide resin
circuit
adhesion strength
metal
sulfuric acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30908493A
Other languages
Japanese (ja)
Inventor
Chigusa Ishii
千草 石井
Shuichi Ogasawara
小笠原修一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP30908493A priority Critical patent/JPH07161774A/en
Publication of JPH07161774A publication Critical patent/JPH07161774A/en
Pending legal-status Critical Current

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  • Manufacturing Of Printed Wiring (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To provide the method for improvement of adhesive strength between polyimide resin and the wiring such as PWB and the like formed using a metal polyimide substrate on which a metal film is directly formed on the surface of polyimide resin. CONSTITUTION:A circuit is formed on the surface of polyimide resin by patterning the metal film directly formed on the polyimide resin surface, and the polyimide resin surface between the exposed circuits is treated by sulfuric acid solution, preferably by the sulfuric acid solution of 5vol.% or higher. As a result, the obtained PWB and the like has high adhesive strength, the decrease in adhesive strength due to deterioration is small and does not cause any practical problem. Accordingly, the adhesive strength between the circuit and the polyimide resin is high even when the PWB and the like of a very fine circuit is formed by this method, and a high reliability can be obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はポリイミド樹脂表面に金
属被膜を直接形成した基板を用いて製造されたプリント
配線板(以下、「PWB」と示す。)、フレキシブルプ
リント回路板(以下、「FPC」と示す。)、テープ自
動ボンディング(以下、「TAB」と示す。)テープ等
の回路とポリイミド樹脂との密着性を改良する方法に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a printed wiring board (hereinafter referred to as "PWB") and a flexible printed circuit board (hereinafter referred to as "FPC") manufactured by using a substrate having a metal coating directly formed on a polyimide resin surface. ).), Tape automatic bonding (hereinafter referred to as "TAB"), and a method for improving the adhesion between a circuit such as a tape and a polyimide resin.

【0002】[0002]

【従来の技術】PWB、FPC、TABテープ等(以
下、「PWB等」と示す。)の電子部品は、ポリイミド
樹脂表面に金属被膜を形成した、いわゆる金属ポリイミ
ド基板を用いて製造される。この金属ポリイミド基板に
は、大きく分けて2種類のものがある。一つは、ポリイ
ミド樹脂表面に接着剤層を介して金属被膜をポリイミド
樹脂表面に貼り合わせるラミネート法により製造された
ものである。そして、他の一つは、ポリイミド樹脂表面
に直接金属層が設けられたものである。このような金属
ポリイミド基板は、ポリイミド樹脂表面に無電解めっき
法、蒸着法、スパッタリング法、イオンプレーティング
法等を用いて金属層を設けることにより、あるいは、金
属箔表面にポリイミド樹脂前駆体を塗布し硬化させるこ
とにより製造されている。
2. Description of the Related Art Electronic components such as PWBs, FPCs, TAB tapes (hereinafter referred to as "PWBs") are manufactured by using a so-called metal polyimide substrate having a metal coating formed on a polyimide resin surface. This metal polyimide substrate is roughly classified into two types. One is manufactured by a laminating method in which a metal coating is adhered to the polyimide resin surface via an adhesive layer on the polyimide resin surface. And the other one is that the metal layer is directly provided on the surface of the polyimide resin. Such a metal-polyimide substrate is formed by providing a metal layer on the surface of the polyimide resin by using an electroless plating method, a vapor deposition method, a sputtering method, an ion plating method, or by coating a polyimide resin precursor on the surface of the metal foil. It is manufactured by curing.

【0003】ラミネート法で作成された金属ポリイミド
基板を用いて高密度の回路を作成する場合、回路形成工
程で不純物が接着剤層に吸着され、回路間の絶縁性が保
たれない。このため、高密度の回路を持つPWB等はポ
リイミド樹脂表面に直接金属被膜を設けたものが使用さ
れている。
When a high-density circuit is formed using a metal polyimide substrate formed by a laminating method, impurities are adsorbed by the adhesive layer in the circuit forming step, and insulation between circuits cannot be maintained. Therefore, a PWB or the like having a high-density circuit has a polyimide resin surface directly provided with a metal coating.

【0004】しかしながら、最近の電子部品の軽薄短小
化、多機能化の要求は電子部品に一層の高密度化を要求
してきている。このような要求を満たすものは、回路幅
も回路間隔も共に極めて狭いものとなっている。
However, the recent demand for lighter, thinner, shorter, smaller, and more multifunctional electronic components has demanded higher density of electronic components. Those satisfying such requirements have extremely narrow circuit widths and circuit intervals.

【0005】ところで、回路幅が狭くなることは、金属
被膜とポリイミド樹脂の接合面積が狭くなることを意味
する。よって、仮に金属被膜とポリイミド樹脂との密着
強度が十分でないと、金属被膜を加工して得た回路がポ
リイミド樹脂表面から僅かな衝撃等により剥離する事態
を招く。そして、現流品の金属ポリイミド基板では、こ
の回路が剥離するという危険性が高い。
By the way, a reduction in the circuit width means a reduction in the bonding area between the metal coating and the polyimide resin. Therefore, if the adhesion strength between the metal coating and the polyimide resin is not sufficient, the circuit obtained by processing the metal coating may be separated from the surface of the polyimide resin by a slight impact or the like. Further, in the current-art metal polyimide substrate, there is a high risk that this circuit will peel off.

【0006】この問題を解決すべく様々な方法で金属層
とポリイミド樹脂間の密着強度を改良する試みがなされ
ている。しかし、いまだに有効なものは提案されていな
い。というのは、金属被膜とポリイミド樹脂との密着強
度は種々の影響を受け、低下するからである。例えば、
金属被膜をパターニングして回路を形成するに際し、露
出したポリイミド樹脂が回路形成時に用いられる薬品等
に曝され、金属被膜とポリイミド樹脂との密着強度が低
下する場合がある。
In order to solve this problem, various attempts have been made to improve the adhesion strength between the metal layer and the polyimide resin. However, no valid one has been proposed yet. This is because the adhesion strength between the metal coating and the polyimide resin is affected by various effects and decreases. For example,
When a circuit is formed by patterning the metal coating, the exposed polyimide resin may be exposed to chemicals or the like used in forming the circuit, and the adhesion strength between the metal coating and the polyimide resin may be reduced.

【0007】[0007]

【発明が解決しようとする課題】本発明は、上記状況を
考慮してなされたものである。即ち、本発明は、ポリイ
ミド樹脂表面に金属被膜が直接形成された金属ポリイミ
ド基板を用いて製造されたPWB等の配線とポリイミド
樹脂との密着強度の改良法の提供を目的とする。
SUMMARY OF THE INVENTION The present invention has been made in consideration of the above situation. That is, an object of the present invention is to provide a method for improving the adhesion strength between a wiring such as a PWB manufactured by using a metal polyimide substrate having a metal film directly formed on a polyimide resin surface and the polyimide resin.

【0008】[0008]

【課題を解決するための手段】本発明者らは、ポリイミ
ド樹脂表面に直接金属被膜を形成した基板を用い、その
金属被膜をパターニングすることにより回路を形成した
後、回路間に露出したポリイミド樹脂を化学的に処理す
ることにより、回路のポリイミド樹脂に対する密着強度
が改良できることを見出し本発明を完成させるに至っ
た。
Means for Solving the Problems The inventors of the present invention used a substrate having a metal film directly formed on a polyimide resin surface, patterned the metal film to form a circuit, and then exposed the polyimide resin between the circuits. It was found that the adhesion strength of the circuit to the polyimide resin can be improved by chemically treating the resin, and the present invention has been completed.

【0009】即ち、上記課題を解決するための本発明の
方法は、ポリイミド樹脂表面に直接形成した金属被膜を
パターニングすることによってポリイミド樹脂表面に回
路を形成する工程において、回路形成後ポリイミド樹脂
表面を硫酸溶液、好ましくは5体積%以上の濃度の硫酸
溶液で処理するものである。処理方法としては浸漬が最
も簡便であるが、これにこだわるものではない。
That is, the method of the present invention for solving the above-mentioned problems is to form a circuit on the surface of a polyimide resin by patterning a metal coating formed directly on the surface of the polyimide resin to form a circuit on the surface of the polyimide resin after forming the circuit. It is treated with a sulfuric acid solution, preferably a sulfuric acid solution having a concentration of 5% by volume or more. Immersion is the simplest treatment method, but it is not limited to this.

【0010】[0010]

【作用】ポリイミド樹脂表面に直接金属被膜を形成した
場合、方法の如何を問わず、ポリイミド樹脂と金属被膜
との界面にはポリイミド樹脂の変質層が存在することが
知られている。例えば、無電解めっき法で得た金属ポリ
イミド基板に存在する変質層は、無電解めっきの前処理
として、アルカリ等でポリイミド樹脂表面を親水性に改
質することにより形成される。
It is known that when a metal coating is directly formed on the surface of the polyimide resin, an altered layer of the polyimide resin exists at the interface between the polyimide resin and the metal coating regardless of the method. For example, the altered layer existing on the metal polyimide substrate obtained by the electroless plating method is formed by hydrophilically modifying the surface of the polyimide resin with alkali or the like as a pretreatment for the electroless plating.

【0011】本発明の方法は、ポリイミド樹脂表面に直
接金属被膜を形成して得た金属ポリイミド基板を用い、
その金属被膜をパターニングして回路を形成した後、回
路間に露出したポリイミド樹脂を硫酸で処理するもので
ある。本発明の方法により回路の密着性が改良出来るの
は、回路間に露出したポリイミド樹脂の変質層が硫酸に
より改質され、機械的、化学的強度が向上するためと考
えられる。
The method of the present invention uses a metal polyimide substrate obtained by directly forming a metal coating on the surface of a polyimide resin,
After patterning the metal film to form a circuit, the polyimide resin exposed between the circuits is treated with sulfuric acid. It is considered that the reason why the circuit adhesion can be improved by the method of the present invention is that the deteriorated layer of the polyimide resin exposed between the circuits is modified by sulfuric acid to improve mechanical and chemical strength.

【0012】本発明で用いる硫酸溶液中の硫酸濃度が5
体積%未満の場合は、処理時間を長くしたり、処理温度
を高くしても変質層の改質効果はほとんど得られない。
また処理温度や処理時間は変質層の状態や用いる硫酸溶
液中の硫酸濃度によって影響されるので、一概に限定で
きない。よって、実操業に本発明の方法を適用する場合
には、適正条件を予め求めておくことが必要である。
The sulfuric acid solution used in the present invention has a sulfuric acid concentration of 5
When it is less than the volume%, the effect of modifying the deteriorated layer is hardly obtained even if the treatment time is lengthened or the treatment temperature is raised.
Further, the treatment temperature and the treatment time are influenced by the state of the altered layer and the sulfuric acid concentration in the sulfuric acid solution used, and therefore cannot be unconditionally limited. Therefore, when applying the method of the present invention to the actual operation, it is necessary to obtain appropriate conditions in advance.

【0013】なお、本発明が適用される基板はポリイミ
ド樹脂表面に直接金属被膜を形成した基板であり、その
金属の形成法、および金属の種類によって限定されな
い。
The substrate to which the present invention is applied is a substrate in which a metal coating is directly formed on the surface of a polyimide resin, and is not limited by the method of forming the metal and the kind of the metal.

【0014】[0014]

【実施例】次に本発明の実施例について述べる。 (実施例1)東レ・デュポン社製ポリイミド樹脂フィル
ム「Kapton 200 H」の表面を30体積%のヒ
ドラジン一水和物水溶液を用い25℃で2分間処理し、
ポリイミド樹脂表面に親水性の変質層を形成した。その
後水洗し、奥野製薬製「OPC−80 キャタリスト
M」を用い触媒付与を行った。その後、水洗し、奥野製
薬製「OPC−555 アクセレーター」を用い促進処
理を行った。その後、以下に示した組成の無電解めっき
液を用い、無電解めっき条件でポリイミド樹脂表面に無
電解銅めっきを施した。そして、ポリイミド樹脂表面に
厚さ0.2μmの均一な無電解銅めっき被膜を形成し
た。
EXAMPLES Next, examples of the present invention will be described. (Example 1) The surface of polyimide resin film "Kapton 200 H" manufactured by Toray-Dupont Co., Ltd. was treated with an aqueous solution of 30% by volume of hydrazine monohydrate at 25 ° C. for 2 minutes,
A hydrophilic altered layer was formed on the surface of the polyimide resin. After that, it was washed with water and made by Okuno Seiyaku "OPC-80 Catalyst.
M ”was used to apply the catalyst. Then, it wash | cleaned with water and accelerated treatment was performed using "OPC-555 accelerator" by Okuno Seiyaku. After that, an electroless plating solution having the composition shown below was used to perform electroless copper plating on the surface of the polyimide resin under electroless plating conditions. Then, a uniform electroless copper plating film having a thickness of 0.2 μm was formed on the surface of the polyimide resin.

【0015】(無電解めっき液の組成) CuSO4・5H2O : 10 g/l EDTA・2Na : 30 g/l 37%HCHO : 5 ml/l PEG#1000 : 0.5 g/l 2,2'-ビピリジル : 10 mg/l(Composition of electroless plating solution) CuSO 4 .5H 2 O: 10 g / l EDTA.2Na: 30 g / l 37% HCHO: 5 ml / l PEG # 1000: 0.5 g / l 2, 2'-bipyridyl: 10 mg / l

【0016】(無電解めっき条件) 温 度 : 65 ℃ 撹 拌 : 空気撹拌 時 間 : 10 分間 pH : 12.5(Electroless plating conditions) Temperature: 65 ° C. Stirring: Air stirring time: 10 minutes pH: 12.5

【0017】次に得られた無電解銅めっき被膜表面に、
以下に示す組成の電気銅めっき液を用い、以下に示した
電解条件で電気銅めっきを施した。そして、ポリイミド
樹脂表面に厚さ35μmの銅被膜を形成した。
Next, on the surface of the electroless copper plating film obtained,
Using the electrolytic copper plating solution having the composition shown below, electrolytic copper plating was performed under the electrolytic conditions shown below. Then, a copper coating having a thickness of 35 μm was formed on the surface of the polyimide resin.

【0018】(めっき液の組成) CuSO4・5H2O : 80 g/l H2SO4 : 180 g/l(Composition of plating solution) CuSO 4 .5H 2 O: 80 g / l H 2 SO 4 : 180 g / l

【0019】(めっき条件) 温 度 : 23 ℃ 陽 極 : 含りん銅 陰極電流密度 : 3 A/dm2 撹 拌 : 空気およびカソードロッ
カー 時 間 : 1 時間
(Plating conditions) Temperature: 23 ° C. Positive electrode: Phosphorus-containing copper Cathode current density: 3 A / dm 2 Stirring: Air and cathode rocker time: 1 hour

【0020】次に、得られた銅めっき被膜をフォトリソ
グラフィーの手法によって幅35μm、間隔35μmの
回路を持つ基板を作成した。次いで、この基板のポリイ
ミド樹脂に対する回路の密着強度を常法に従い測定し
た。得られた密着強度は1.0Kgf/cmであった。
Next, a substrate having a circuit with a width of 35 μm and an interval of 35 μm was prepared from the obtained copper plating film by a photolithography technique. Then, the adhesion strength of the circuit to the polyimide resin on this substrate was measured by a conventional method. The obtained adhesion strength was 1.0 Kgf / cm.

【0021】その後、この基板を25℃、濃度20体積
%の硫酸溶液に1時間浸漬した。その後水洗し、風乾
し、前記と同様にしてポリイミド樹脂に対する回路の密
着強度を測定した。得られた密着強度は1.2Kgf/
cmであった。
Thereafter, this substrate was immersed in a sulfuric acid solution having a concentration of 20% by volume at 25 ° C. for 1 hour. Then, it was washed with water and dried in air, and the adhesion strength of the circuit to the polyimide resin was measured in the same manner as above. The obtained adhesion strength is 1.2 Kgf /
It was cm.

【0022】次に、この基板を濃度20重量%、25℃
の塩酸溶液に1時間浸漬し、劣化テストを行った。その
後、回路とポリイミド樹脂との密着強度を測定した。得
られた密着強度は1.0Kgf/cmであった。この基
板は実用に耐え、信頼性も高いものといえる。
Next, this substrate was placed at a concentration of 20% by weight at 25 ° C.
The sample was immersed in the hydrochloric acid solution (1) for 1 hour to perform a deterioration test. Then, the adhesion strength between the circuit and the polyimide resin was measured. The obtained adhesion strength was 1.0 Kgf / cm. It can be said that this substrate is practical and has high reliability.

【0023】(実施例2)処理に用いる硫酸溶液の濃度
を5体積%とし、処理温度を50℃とし、処理時間を1
時間とした以外は実施例1と同様にして回路を形成し
た。
Example 2 The concentration of the sulfuric acid solution used for the treatment was 5% by volume, the treatment temperature was 50 ° C., and the treatment time was 1
A circuit was formed in the same manner as in Example 1 except that the time was set.

【0024】実施例1と同様にして回路とポリイミド樹
脂との密着強度を測定した。得られた密着強度は1.1
Kgf/cmであった。
The adhesion strength between the circuit and the polyimide resin was measured in the same manner as in Example 1. The obtained adhesion strength is 1.1.
It was Kgf / cm.

【0025】次に、実施例1と同様にして劣化テストを
行った。その後、回路とポリイミド樹脂との密着強度を
測定した。得られた密着強度は1.0Kgf/cmであ
った。この基板は実用に耐え、信頼性も高いものといえ
る。
Next, a deterioration test was conducted in the same manner as in Example 1. Then, the adhesion strength between the circuit and the polyimide resin was measured. The obtained adhesion strength was 1.0 Kgf / cm. It can be said that this substrate is practical and has high reliability.

【0026】(実施例3)蒸着法によりポリイミド樹脂
表面に銅被膜を形成した基板(シェルダール社製「Nova
clad」)を用いた以外は実施例1と同様にして回路を形
成した。
Example 3 A substrate having a copper film formed on the surface of a polyimide resin by a vapor deposition method (“Nova manufactured by Sherdal Co.”)
A circuit was formed in the same manner as in Example 1 except that "clad") was used.

【0027】次いで、この基板のポリイミド樹脂に対す
る回路の密着強度を実施例1と同様にして測定した。得
られた密着強度は1.0Kgf/cmであった。
Then, the adhesion strength of the circuit to the polyimide resin on this substrate was measured in the same manner as in Example 1. The obtained adhesion strength was 1.0 Kgf / cm.

【0028】その後、この基板を25℃、濃度20体積
%の硫酸溶液に1時間浸漬した。その後水洗し、風乾
し、前記と同様にしてポリイミド樹脂に対する回路の密
着強度を測定した。得られた密着強度は1.1Kgf/
cmであった。
Thereafter, this substrate was immersed in a sulfuric acid solution having a concentration of 20% by volume at 25 ° C. for 1 hour. Then, it was washed with water and dried in air, and the adhesion strength of the circuit to the polyimide resin was measured in the same manner as above. The obtained adhesion strength is 1.1 Kgf /
It was cm.

【0029】次に、実施例1と同様にして劣化テストを
行った。その後、回路とポリイミド樹脂との密着強度を
測定した。得られた密着強度は1.0Kgf/cmであ
った。この基板は実用に耐え、信頼性も高いものといえ
る。
Then, a deterioration test was conducted in the same manner as in Example 1. Then, the adhesion strength between the circuit and the polyimide resin was measured. The obtained adhesion strength was 1.0 Kgf / cm. It can be said that this substrate is practical and has high reliability.

【0030】(比較例1)処理に用いる硫酸溶液の濃度
を4体積%とし、処理温度を60℃とし、処理時間を2
時間とした以外は実施例1と同様にして回路を形成し
た。
(Comparative Example 1) The concentration of the sulfuric acid solution used for the treatment was 4% by volume, the treatment temperature was 60 ° C., and the treatment time was 2
A circuit was formed in the same manner as in Example 1 except that the time was set.

【0031】実施例1と同様にして回路とポリイミド樹
脂との密着強度を測定した。得られた密着強度は1.1
Kgf/cmであった。
The adhesion strength between the circuit and the polyimide resin was measured in the same manner as in Example 1. The obtained adhesion strength is 1.1.
It was Kgf / cm.

【0032】次に、実施例1と同様にして劣化テストを
行った。その後、回路とポリイミド樹脂との密着強度を
測定した。得られた密着強度は0.6Kgf/cmであ
り、著しい低下が認められた。この基板は信頼性に欠け
るものである。
Then, a deterioration test was conducted in the same manner as in Example 1. Then, the adhesion strength between the circuit and the polyimide resin was measured. The obtained adhesion strength was 0.6 Kgf / cm, and a remarkable decrease was observed. This substrate is unreliable.

【0033】[0033]

【発明の効果】本発明の方法により作成されたPWB等
は、密着強度が高く、劣化による密着強度の低下も僅か
であり、実用上問題とならない。
EFFECTS OF THE INVENTION PWBs produced by the method of the present invention have a high adhesion strength, and the deterioration of the adhesion strength due to deterioration is slight, which is not a practical problem.

【0034】よって、本発明の方法で極めて微細な回路
のPWB等を作成した場合でも、回路とポリイミド樹脂
との密着強度は高く、充分信頼性のおけるものとなる。
Therefore, even when a PWB or the like having an extremely fine circuit is produced by the method of the present invention, the adhesion strength between the circuit and the polyimide resin is high and the reliability is sufficiently high.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 ポリイミド樹脂表面に直接形成した金
属被膜をパターニングすることによってポリイミド樹脂
表面に回路を形成する方法において、回路形成後、露出
したポリイミド樹脂表面を硫酸溶液で処理することを特
徴とする回路形成法。
1. A method for forming a circuit on a surface of a polyimide resin by patterning a metal coating formed directly on the surface of the polyimide resin, wherein the exposed surface of the polyimide resin is treated with a sulfuric acid solution after the circuit is formed. Circuit formation method.
【請求項2】 硫酸溶液中の硫酸濃度を5体積%以上
とすることを特徴とする請求項1記載の回路形成法。
2. The circuit forming method according to claim 1, wherein the sulfuric acid concentration in the sulfuric acid solution is 5% by volume or more.
JP30908493A 1993-12-09 1993-12-09 Circuit forming method Pending JPH07161774A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30908493A JPH07161774A (en) 1993-12-09 1993-12-09 Circuit forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30908493A JPH07161774A (en) 1993-12-09 1993-12-09 Circuit forming method

Publications (1)

Publication Number Publication Date
JPH07161774A true JPH07161774A (en) 1995-06-23

Family

ID=17988698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30908493A Pending JPH07161774A (en) 1993-12-09 1993-12-09 Circuit forming method

Country Status (1)

Country Link
JP (1) JPH07161774A (en)

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