JPH07160007A - Resist removal method and device thereof - Google Patents
Resist removal method and device thereofInfo
- Publication number
- JPH07160007A JPH07160007A JP30206993A JP30206993A JPH07160007A JP H07160007 A JPH07160007 A JP H07160007A JP 30206993 A JP30206993 A JP 30206993A JP 30206993 A JP30206993 A JP 30206993A JP H07160007 A JPH07160007 A JP H07160007A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- ozone
- temperature
- resist film
- ashing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、レジスト除去方法及び
レジスト除去装置に係り、特に、オゾンアッシングを行
なう際に、レジストを効果的に加熱して基坂への熱影響
を軽減するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist removing method and a resist removing apparatus, and more particularly to effectively heating a resist during ozone ashing to reduce the thermal influence on the base slope. .
【０００２】[0002]
【従来の技術】半導体や薄膜センサの製造には、微細か
つ非常に精確な技術が要求されるが、ウエハプロセス、
中でもリソグラフィー技術は、製品の性能、歩留りや品
質等を決定する重要なファクターとなっている。リソグ
ラフィー技術は、レジスト塗布、マスキング、露光、現
像、エッチング、レジスト除去等の各工程から構成され
る。このうち、レジスト除去には、レジストを除去する
酸化剤や剥離液を用いて処理する方法があるが、酸素ガ
スプラズマによるアッシング方法（灰化処理）は、処理
速度を速くすることができるために、現在の主流を占め
ている。2. Description of the Related Art A fine and very precise technique is required for manufacturing a semiconductor or a thin film sensor.
Among them, lithography technology is an important factor that determines the performance, yield, quality, etc. of products. The lithographic technique comprises steps such as resist application, masking, exposure, development, etching and resist removal. Among these, there is a method of removing the resist using an oxidizing agent or a stripping solution for removing the resist, but the ashing method using oxygen gas plasma (ashing treatment) can increase the processing speed. , Currently occupy the mainstream.
【０００３】[0003]
【発明が解決しようとする課題】このように、酸素ガス
プラズマによる灰化処理は、高速処理を可能とする長所
を有するものであるが、荷電粒子による素子へのダメー
ジが大きく、集積回路等の高集積化、微細化傾向にとも
なって、素子に致命的な損傷を与える場合がある。そこ
で、素子へのダメージが少ないレジスト除去方法、特に
オゾンと紫外線とを利用するオゾンアッシング法が研究
されている。このオゾンアッシング法は、除去するレジ
ストの形成されている基坂を容器内部で加熱するととも
に、オゾンガスを注入して基坂と平行に流動させ、オゾ
ンガスに紫外線を照射するものである。オゾンに紫外線
を照射すると、下記式のように、ラジカル酸素
（Ｏ* ）が発生する。 Ｏ3 →Ｏ* ＋Ｏ2 …… そして、通常、レジスト材料は各種の炭化水素類で構成
されているので、ラジカル酸素と炭化水素との反応によ
り、下記式に示す分解反応（灰化反応）が起こり、レ
ジストが除去される。 ＣnＨm ＋（2n+m/2）Ｏ3→nＣＯ2 ＋ m/2Ｈ2Ｏ ＋（2n+m/2）Ｏ2……As described above, the ashing treatment by the oxygen gas plasma has an advantage that a high-speed treatment can be performed. However, the damage to the element by the charged particles is large, and the ashing treatment is difficult. With the trend toward higher integration and miniaturization, elements may be fatally damaged. Therefore, a resist removal method that causes less damage to the element, particularly an ozone ashing method that uses ozone and ultraviolet rays, has been studied. In this ozone ashing method, the base hill on which the resist to be removed is formed is heated inside the container, and ozone gas is injected to flow parallel to the base hill, and the ozone gas is irradiated with ultraviolet rays. When ozone is irradiated with ultraviolet rays, radical oxygen (O * ) is generated as shown in the following formula. O 3 → O * + O 2 ...... And since the resist material is usually composed of various hydrocarbons, the decomposition reaction (ashing reaction) shown in the following formula is caused by the reaction between radical oxygen and hydrocarbons. It happens and the resist is removed. C n H m + (2n + m / 2) O 3 → n CO 2 + m / 2 H 2 O ＋ ( 2n + m / 2 ) O 2 ……
【０００４】しかしながら、オゾンアッシング法におけ
る灰化反応は、ラジカル酸素量を多くするとともに、レ
ジストの温度を例えば２００〜２５０℃以上の高温状態
とすることが必要になる。レジスト及び基坂の温度を上
げる方法としては、例えば電気ヒーターに基坂を乗せて
加熱する技術の応用が考えられるものの、この場合に
は、電気ヒーターの温度が最も高く、基坂、レジストの
順に低くなっていくので、レジストを所望の温度まで上
昇させようとすれば、これよりも高い温度が基坂に付加
され、半導体からなる基坂の種類によっては熱破壊状態
に至るおそれがある。However, in the ashing reaction in the ozone ashing method, it is necessary to increase the amount of radical oxygen and to keep the temperature of the resist at a high temperature of 200 to 250 ° C. or higher. As a method of raising the temperature of the resist and the base hill, for example, application of a technique of heating the base hill on an electric heater is considered, but in this case, the temperature of the electric heater is the highest, and the base hill and the resist are in this order. If the resist is heated to a desired temperature, a temperature higher than this will be added to the base hill, and depending on the type of the base hill made of a semiconductor, there is a risk of a thermal breakdown state.
【０００５】本発明は、このような課題を解決するもの
であり、オゾンアッシングを行なう際に、レジスト部分
を効果的に加熱するとともに、レジストよりも基坂の温
度が低くなるようにして熱影響を軽減するものである。The present invention is intended to solve such a problem, and when ozone ashing is performed, the resist portion is effectively heated, and the temperature of the base slope becomes lower than that of the resist, so that the heat effect is reduced. Is to reduce.
【０００６】[0006]
【課題を解決するための手段】本発明に係るレジスト除
去方法は、基坂上のレジストにオゾンを接触させること
によってアッシングを行なう場合に、オゾンガスをレジ
ストの表面に吹き付けるとともに、赤外線照射により主
としてレジストを加熱してレジストをアッシングするよ
うにしている。本発明に係るレジスト除去装置は、基坂
上のレジストにオゾンを接触させることによってアッシ
ングを行なう装置において、レジストの形成された基坂
を収容する容器と、該容器の内部に接続状態に配されオ
ゾンガスを基坂上のレジスト表面に供給するオゾン供給
手段と、容器の上部近傍に配され赤外線照射によって基
坂上のレジスト表面を加熱する赤外線照射手段とを具備
する構成を採用している。According to the method of removing a resist according to the present invention, when ashing is carried out by bringing ozone into contact with a resist on a substrate, ozone gas is blown onto the surface of the resist and infrared irradiation is mainly used to remove the resist. The resist is ashed by heating. A resist removing apparatus according to the present invention is an apparatus for performing ashing by bringing ozone into contact with a resist on a base slope, and a container for housing the base slope on which the resist is formed, and an ozone gas connected to the inside of the container. The ozone supply means for supplying the resist surface on the base slope and the infrared irradiation means arranged near the upper part of the container for heating the resist surface on the base slope by infrared irradiation are adopted.
【０００７】[0007]
【作用】容器内に収容した基坂上のレジストに赤外線を
照射すると、吸熱によってレジスト部分が高温となる
が、この際に基坂に対してはレジストを介して熱伝達が
なされるので、基坂の部分はレジストよりも低い温度に
保持される。高温状態のレジストにオゾンが吹き付けら
れることにより、レジストの灰化処理が行なわれる。レ
ジストの除去によって基坂の表面が露出すると、赤外線
の直射を受けることになるが、この場合にあっては、基
坂が鏡面仕上げされていることに基づいて、赤外線の大
部分を反射して直接の加熱による温度上昇が抑制され
る。When infrared rays are radiated to the resist on the base slope housed in the container, the resist portion becomes high temperature due to heat absorption. At this time, heat is transferred to the base slope through the resist. Is kept at a lower temperature than the resist. By spraying ozone on the resist in a high temperature state, the resist is incinerated. If the surface of the base hill is exposed by removing the resist, it will be directly exposed to infrared rays.In this case, however, most of the infrared rays are reflected due to the mirror finish of the base hill. The temperature rise due to direct heating is suppressed.
【０００８】[0008]
【実施例】以下、本発明に係るレジスト除去方法及びそ
の装置の実施例について、図１を参照して説明する。図
１にあって、符号１は容器、２は基坂支持手段、３はオ
ゾン供給手段、４は赤外線照射手段、５は真空引き手
段、６は紫外線照射手段、Ｘはレジスト膜（レジス
ト）、Ｙは基坂である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the resist removing method and apparatus according to the present invention will be described below with reference to FIG. In FIG. 1, reference numeral 1 is a container, 2 is Kisaka support means, 3 is ozone supply means, 4 is infrared irradiation means, 5 is vacuum drawing means, 6 is ultraviolet irradiation means, X is a resist film (resist), Y is Kisaka.
【０００９】以下、レジスト除去装置について説明する
と、前記容器１には、基坂支持手段２、オゾン供給手段
３、真空引き手段５及び掃気管１１等が内外を気密に貫
通した状態に配され、上蓋１２が石英の透明板によって
形成される（または透明窓の部分を有する）。そして、
掃気管１１は、その内方開口が収容された基坂Ｙの表
面、レジスト膜Ｘの表面の近傍位置となるように設定さ
れ、外方から窒素ガスを送り込んで酸素ガスと置換する
際に使用される。The resist removing apparatus will be described below. The container 1 is provided with a base slope supporting means 2, an ozone supplying means 3, a vacuuming means 5, a scavenging pipe 11 and the like in a state where the inside and outside are hermetically penetrated. The upper lid 12 is formed by a transparent plate of quartz (or has a transparent window portion). And
The scavenging pipe 11 is set so that its inner opening is located near the surface of the base hill Y in which it is housed and the surface of the resist film X, and is used when nitrogen gas is sent from the outside to replace oxygen gas. To be done.
【００１０】前記基坂支持手段２は、電動モータ等の回
転駆動源２１と、該回転駆動源２１に接続され容器１の
底部を気密状態で回転可能に貫通させられる回転軸２２
と、該回転軸２２に取り付けられ容器１の内部で回転さ
せられかつ電気ヒータを内蔵状態のホットプレート２３
と、該ホットプレート２３に一体に配され基坂Ｙが搭載
される基坂ホルダ２４と、該基坂ホルダ２４の温度を検
出するための熱電対等の温度センサ２５とを有してい
る。The base slope supporting means 2 is a rotary drive source 21 such as an electric motor, and a rotary shaft 22 connected to the rotary drive source 21 and rotatably piercing the bottom of the container 1 in an airtight state.
And a hot plate 23 attached to the rotary shaft 22 and rotated inside the container 1 and having an electric heater built therein.
The base plate holder 24, which is integrally arranged on the hot plate 23 and on which the base plate Y is mounted, and the temperature sensor 25 such as a thermocouple for detecting the temperature of the base plate holder 24.
【００１１】前記オゾン供給手段３は、例えば容器１の
外方に配されて酸素からオゾンを生成するオゾン発生器
３１と、該オゾン発生器３１に対して容器１の側壁を貫
通した状態に接続されオゾンガスを必要に応じてキャリ
アガスとともに移送する供給配管３２と、該供給配管３
２の先端に基坂ホルダ２４の上の基坂Ｙ（レジスト膜
Ｘ）に近傍状態に配されるオゾン噴出ノズル３３とを有
している。これら供給配管３２及びオゾン噴出ノズル３
３には、例えば多重管構造として冷媒を挿通させて冷却
を行なう等の冷却手段が講じられている。The ozone supply means 3 is connected, for example, to an ozone generator 31 arranged outside the container 1 to generate ozone from oxygen, and to the ozone generator 31 so as to penetrate the side wall of the container 1. A supply pipe 32 for transferring the ozone gas which has been transferred together with a carrier gas as required, and the supply pipe 3
At the tip of No. 2, there is an ozone ejection nozzle 33 arranged in the vicinity of the base slope Y (resist film X) on the base slope holder 24. These supply pipe 32 and ozone ejection nozzle 3
In 3, a cooling means is provided, for example, as a multi-tube structure to insert a cooling medium for cooling.
【００１２】前記赤外線照射手段４は、例えば容器１の
上方位置に配される赤外線ランプ等によって構成され、
赤外線を基坂ホルダ２４の上のレジスト膜Ｘに照射し
て、吸熱を生じさせることにより加熱を行なうものであ
る。The infrared irradiating means 4 is composed of, for example, an infrared lamp arranged above the container 1,
The resist film X on the base slope holder 24 is irradiated with infrared rays to generate heat and heat.
【００１３】前記真空引き手段５は、容器１の外方に配
される真空ポンプ５１と、該真空ポンプ５１に接続され
容器１を貫通してその内部開口５２ａが容器１の内部に
臨まされて容器１の内部ガスを吸引する排気管５２とを
有している。The evacuation means 5 has a vacuum pump 51 disposed outside the container 1, and a vacuum pump 51 connected to the vacuum pump 51 and penetrating the container 1 so that an inner opening 52a thereof faces the inside of the container 1. And an exhaust pipe 52 for sucking the internal gas of the container 1.
【００１４】前記紫外線照射手段６は、容器１の上方位
置または容器１の内部に配され、例えば紫外線ランプ等
によって構成されるとともに、前述したように、オゾン
に紫外線を照射することによってラジカル酸素を発生さ
せるものが適用される。The ultraviolet irradiation means 6 is arranged above the container 1 or inside the container 1 and is constituted by, for example, an ultraviolet lamp or the like, and as described above, irradiates ozone with ultraviolet rays to generate radical oxygen. What happens is applied.
【００１５】このように構成されているレジスト除去装
置によるレジスト除去方法について以下説明する。A resist removing method using the resist removing apparatus thus configured will be described below.
【００１６】レジスト膜Ｘの形成された基坂Ｙを容器１
の内部の基坂ホルダ２４に搭載して、ホットプレート２
３の作動により基坂Ｙを熱破壊温度よりも低い温度（例
えば１５０℃）まで補助的に加熱しておくととともに、
赤外線照射手段４を作動させて、レジスト膜Ｘに赤外線
を照射して所望温度（例えば２００℃前後）の雰囲気と
する。これらの加熱の際に、着色が施された状態のレジ
スト膜Ｘは、吸熱によって高温状態となり易いが、レジ
スト膜Ｘを経由して基坂Ｙの部分に熱伝達がなされるの
で、基坂Ｙの部分は、温度破壊が生じない程度に維持さ
れる。The base plate Y on which the resist film X is formed is placed in the container 1
It is mounted on the base plate holder 24 inside the hot plate 2
With the operation of 3, auxiliary heating of Kisaka Z to a temperature lower than the thermal destruction temperature (for example, 150 ° C.) is auxiliary and
The infrared irradiation means 4 is operated to irradiate the resist film X with infrared rays to create an atmosphere of a desired temperature (for example, around 200 ° C.). During these heatings, the colored resist film X is likely to reach a high temperature state due to heat absorption, but since heat is transferred to the portion of the base slope Y via the resist film X, the base slope Y The part of is maintained to the extent that temperature destruction does not occur.
【００１７】レジスト膜Ｘの温度を所望温度にするとと
もに、オゾン供給手段３の作動によりオゾンガスを供給
配管３２を経由してオゾン噴出ノズル３３に供給し、レ
ジスト膜Ｘに吹き付ける。この際に窒素ガスをキャリア
ガスとして使用して、流速を高めた状態でオゾンガスを
吹き付けるとよく、そして、オゾンガスと窒素ガスとの
混合ガス中に、酸素が含まれないように脱酸素処理して
おくことが望ましい。The temperature of the resist film X is set to a desired temperature, and the ozone gas is supplied to the ozone jet nozzle 33 through the supply pipe 32 by the operation of the ozone supply means 3 and sprayed on the resist film X. At this time, using nitrogen gas as a carrier gas, it is advisable to spray ozone gas at a high flow rate, and deoxidize the mixed gas of ozone gas and nitrogen gas so that oxygen is not contained. It is desirable to set it.
【００１８】オゾンガスを吹き付けるとともに、紫外線
照射手段６の作動により紫外線をオゾンに照射すると、
レジスト膜Ｘの近傍でラジカル酸素が生成されて、ラジ
カル酸素との接触によりレジスト膜Ｘが灰化処理され
る。このような灰化処理時にあっては、前述した式に
示す分解反応（灰化反応）に基づいて二酸化炭素、水蒸
気、酸素が発生するが、これらの気体は真空引き手段５
における真空ポンプ５１の作動により内部開口５２ａか
ら吸引されて、排気管５２を経由して容器１の外まで排
出される。When ozone gas is sprayed and ultraviolet rays are applied to ozone by the operation of the ultraviolet irradiation means 6,
Radical oxygen is generated in the vicinity of the resist film X, and the resist film X is incinerated by contact with the radical oxygen. At the time of such ashing treatment, carbon dioxide, water vapor, and oxygen are generated based on the decomposition reaction (ashing reaction) shown in the above formula, but these gases are evacuated by the vacuuming means 5.
By the operation of the vacuum pump 51, the gas is sucked from the internal opening 52a and discharged to the outside of the container 1 via the exhaust pipe 52.
【００１９】これらの灰化処理においては、基坂支持手
段２における回転駆動源２１の作動により、回転軸２２
を経由してホットプレート２３及び基坂ホルダ２４が回
転させられ、これによりオゾンガスを均一にレジスト膜
Ｘに吹き付けて、灰化反応によるレジスト膜Ｘの除去を
満遍なくかつ均等に実施することができる。In these ashing processes, the rotation shaft 22 is operated by the operation of the rotary drive source 21 in the base slope supporting means 2.
The hot plate 23 and the base hill holder 24 are rotated via this, whereby ozone gas can be uniformly sprayed on the resist film X, and the removal of the resist film X by the ashing reaction can be carried out uniformly and evenly.
【００２０】なお、灰化処理時に、掃気管１１から窒素
ガスを供給して、レジスト膜Ｘの近傍に存在する酸素ガ
スと置換して、分解反応（灰化反応）を起こす部分の酸
素ガス濃度を低下させることが行なわれる。つまり、前
述した式から明らかなように、酸素ガス濃度を小さく
することにより、灰化効率が高まり処理速度が向上す
る。During the ashing process, nitrogen gas is supplied from the scavenging pipe 11 to replace the oxygen gas existing in the vicinity of the resist film X to cause a decomposition reaction (ashing reaction). Is reduced. That is, as is clear from the above equation, by reducing the oxygen gas concentration, the ashing efficiency is increased and the processing speed is improved.
【００２１】一方、レジスト膜Ｘが除去されることによ
って、基坂Ｙの表面が露出する現象が生じ、この露出面
に赤外線が照射されることになるが、しかし、基坂Ｙは
本来鏡面仕上げされているために、赤外線の大部分を反
射して吸収されることが少なく、赤外線による温度上昇
が抑制され、レジスト膜Ｘよりも温度が低くなる状態が
維持される。On the other hand, when the resist film X is removed, the surface of the base slope Y is exposed and infrared rays are radiated to the exposed face. However, the base slope Y is originally a mirror finish. Therefore, most of the infrared rays are not reflected and absorbed, the temperature rise due to the infrared rays is suppressed, and the temperature lower than that of the resist film X is maintained.
【００２２】また、オゾンからのラジカル酸素の生成反
応は、紫外線の照射に加えて、加熱によっても起きてし
まうが、レジスト膜Ｘの部分が最も温度が高く、かつこ
の近傍にオゾンが供給されるので、赤外線により加熱さ
れたレジスト膜Ｘがラジカル酸素に晒されることにな
り、これにより灰化処理速度を高めることができる。The reaction of producing radical oxygen from ozone occurs not only by irradiation of ultraviolet rays but also by heating, but the temperature of the resist film X is the highest and ozone is supplied in the vicinity thereof. Therefore, the resist film X heated by infrared rays is exposed to radical oxygen, which can increase the ashing processing speed.
【００２３】[0023]
【発明の効果】本発明に係るレジスト除去方法及びその
装置によれば、以下のような効果を奏する。 （１） オゾンアッシングを行なう際に、赤外線照射に
よりレジストを表面から加熱し、オゾンガスをレジスト
の表面に吹き付けるものであるから、レジストの表面部
分が最も温度が高くなり、レジストの加熱により灰化反
応を生じさせてレジストを効果的に除去することができ
る。 （２） レジストを所望の温度まで上昇させる場合に、
これよりも基坂の温度が低く抑えられるため、基坂の熱
破壊を防止するとともに、基坂への熱影響を従来技術と
比較して軽減することができる。 （３） 最も温度の高いレジスト表面でラジカル酸素が
生成されるため、ラジカル酸素の損失が少なく、オゾン
アッシングを高速で実施することができる。The resist removing method and apparatus according to the present invention have the following effects. (1) When ozone ashing is performed, the resist is heated from the surface by infrared irradiation and the ozone gas is sprayed onto the resist surface. Therefore, the surface portion of the resist has the highest temperature, and the ashing reaction is caused by heating the resist. And the resist can be effectively removed. (2) When raising the resist to a desired temperature,
Since the temperature of the base slope can be kept lower than this, it is possible to prevent thermal damage to the base slope and reduce the thermal influence on the base slope as compared with the prior art. (3) Since radical oxygen is generated on the resist surface having the highest temperature, loss of radical oxygen is small, and ozone ashing can be performed at high speed.
【図１】本発明に係るレジスト除去方法及びその装置の
実施例を示す一部をブロック図とした正断面図である。FIG. 1 is a partial cross-sectional front view showing a resist removing method and an apparatus therefor according to an embodiment of the present invention.
【符号の説明】 １ 容器 ２ 基坂支持手段 ３ オゾン供給手段 ４ 赤外線照射手段 ５ 真空引き手段 ６ 紫外線照射手段 １１ 掃気管 １２ 上蓋 ２１ 回転駆動源 ２２ 回転軸 ２３ ホットプレート ２４ 基坂ホルダ ２５ 温度センサ ３１ オゾン発生器 ３２ 供給配管 ３３ オゾン噴出ノズル ５１ 真空ポンプ ５２ 排気管 ５２ａ 内部開口 Ｘ レジスト膜（レジスト） Ｙ 基坂[Explanation of Codes] 1 Container 2 Kisaka Supporting Means 3 Ozone Supplying Means 4 Infrared Irradiating Means 5 Vacuum Evacuation Means 6 Ultraviolet Irradiating Means 11 Scavenging Pipes 12 Upper Lids 21 Rotational Drive Sources 22 Rotating Shafts 23 Hot Plates 24 Kisaka Hills 25 Temperature Sensors 31 Ozone Generator 32 Supply Pipe 33 Ozone Ejection Nozzle 51 Vacuum Pump 52 Exhaust Pipe 52a Internal Opening X Resist Film (Resist) Y Kisaka
Claims (2)
ことによってアッシングを行なう方法であって、オゾン
ガスをレジストの表面に吹き付けるとともに、赤外線照
射により主としてレジストを加熱してレジストをアッシ
ングすることを特徴とするレジスト除去方法。1. A method of performing ashing by bringing ozone into contact with a resist on a base slope, wherein ozone gas is blown onto the surface of the resist, and the resist is mainly heated by infrared irradiation to ash the resist. Method for removing resist.
ことによってアッシングを行なう装置であって、レジス
トの形成された基坂を収容する容器と、該容器の内部に
接続状態に配されオゾンガスを基坂上のレジスト表面に
供給するオゾン供給手段と、容器の上部近傍に配され赤
外線照射によって基坂上のレジスト表面を加熱する赤外
線照射手段とを具備することを特徴とするレジスト除去
装置。2. An apparatus for performing ashing by bringing ozone into contact with a resist on a base slope, the container containing the base slope on which the resist is formed, and the ozone gas base connected inside the container in a connected state. A resist removing apparatus comprising: an ozone supply unit for supplying the resist surface on a slope; and an infrared irradiation unit arranged near the upper part of the container to heat the resist surface on the base slope by infrared irradiation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30206993A JP3248320B2 (en) | 1993-12-01 | 1993-12-01 | Resist removing method and resist removing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30206993A JP3248320B2 (en) | 1993-12-01 | 1993-12-01 | Resist removing method and resist removing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07160007A true JPH07160007A (en) | 1995-06-23 |
| JP3248320B2 JP3248320B2 (en) | 2002-01-21 |
Family
ID=17904546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30206993A Expired - Fee Related JP3248320B2 (en) | 1993-12-01 | 1993-12-01 | Resist removing method and resist removing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3248320B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19924058A1 (en) * | 1999-05-26 | 2000-11-30 | Bosch Gmbh Robert | Surface decontamination apparatus, especially for organic contaminant removal from a structured silicon wafer or body, comprises an ozone reactor in which a structured body is heated during ozone exposure |
| GB2352873A (en) * | 1999-06-04 | 2001-02-07 | Nec Corp | Method and apparatus for removing photoresist from a semiconductor wafer |
-
1993
- 1993-12-01 JP JP30206993A patent/JP3248320B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19924058A1 (en) * | 1999-05-26 | 2000-11-30 | Bosch Gmbh Robert | Surface decontamination apparatus, especially for organic contaminant removal from a structured silicon wafer or body, comprises an ozone reactor in which a structured body is heated during ozone exposure |
| GB2352873A (en) * | 1999-06-04 | 2001-02-07 | Nec Corp | Method and apparatus for removing photoresist from a semiconductor wafer |
| US6559064B1 (en) | 1999-06-04 | 2003-05-06 | Nec Electronics Corporation | Method and apparatus for removing photoresist on semiconductor wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3248320B2 (en) | 2002-01-21 |
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