JPH0715731B2 - Method of manufacturing thin film magnetic head - Google Patents
Method of manufacturing thin film magnetic headInfo
- Publication number
- JPH0715731B2 JPH0715731B2 JP62240645A JP24064587A JPH0715731B2 JP H0715731 B2 JPH0715731 B2 JP H0715731B2 JP 62240645 A JP62240645 A JP 62240645A JP 24064587 A JP24064587 A JP 24064587A JP H0715731 B2 JPH0715731 B2 JP H0715731B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating substrate
- thin film
- magnetic head
- film
- insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Description
【発明の詳細な説明】 〔概 要〕 絶縁基板上にスパッタにより金属膜又は絶縁膜を形成す
る工程を含む薄膜磁気ヘッドの製造方法に関し、 スパッタ処理中の絶縁基板上の金属膜又は絶縁膜に帯電
した電子による絶縁基板保持用ホルダへの異常放電に基
く絶縁基板等の損傷防止を目的とし、 ターゲットに対向する電極上に絶縁基板を載置し、該絶
縁基板を金属ホルダにより電極上に固定保持して該絶縁
基板上に金属膜又は絶縁膜をスパッタ法により形成する
薄膜磁気ヘッドの製造方法において、前記金属ホルダと
絶縁基板表面の電位をほぼ等しくした状態でスパッタを
行う構成とする。The present invention relates to a method of manufacturing a thin-film magnetic head including a step of forming a metal film or an insulating film on an insulating substrate by sputtering. To prevent damage to the insulating substrate, etc. due to abnormal discharge to the holder for holding the insulating substrate by charged electrons, place the insulating substrate on the electrode facing the target, and fix the insulating substrate on the electrode with the metal holder. In a method of manufacturing a thin film magnetic head in which a metal film or an insulating film is held and formed on the insulating substrate by a sputtering method, the metal holder and the surface of the insulating substrate are made to have substantially the same potential, and the sputtering is performed.
本発明は薄膜磁気ヘッドの製造方法に関し、特に絶縁基
板上にスパッタにより金属膜又は絶縁膜を形成する工程
の改良に関する。The present invention relates to a method of manufacturing a thin film magnetic head, and more particularly to improvement of a step of forming a metal film or an insulating film on an insulating substrate by sputtering.
磁気ディスク装置又は磁気テープ装置の大容量化及び高
速データ処理のために薄膜磁気ヘッドが用いられてい
る。この薄膜磁気ヘッドの製造工程において、スパッタ
リング、真空蒸着又はメッキ等の薄膜成長技術により基
板上に金属膜あるいは絶縁膜が形成される。A thin film magnetic head is used for increasing the capacity of a magnetic disk device or magnetic tape device and for high-speed data processing. In the manufacturing process of this thin film magnetic head, a metal film or an insulating film is formed on a substrate by a thin film growth technique such as sputtering, vacuum deposition or plating.
従来、インダクティブ型薄膜磁気ヘッドの場合、ギャッ
プ絶縁層としてAl2O3膜を絶縁性基板上にしてRFスパッ
タにより成膜しており、またシャントバイアス方式のMR
ヘッド（磁気抵抗効果型ヘッド）の場合にはバイアス層
としてチタン膜が基板上にRFスパッタリングにより成膜
されていた。この場合、スパッタ装置の電極上に載置さ
れた絶縁基板は金属製のホルダにより該電極上に固定保
持されていた。Conventionally, in the case of an inductive thin film magnetic head, an Al 2 O 3 film is used as a gap insulating layer on an insulating substrate by RF sputtering, and a shunt bias type MR
In the case of a head (magnetoresistive head), a titanium film was formed as a bias layer on the substrate by RF sputtering. In this case, the insulating substrate placed on the electrode of the sputtering apparatus was fixed and held on the electrode by a metal holder.
前記従来のスパッタリング工程においては、薄膜表面に
異常放電が発生する場合が多かった。これはスパッタリ
ング中に基板に入射する電子により薄膜表面が帯電し、
接地された金属ホルダとの間でスパークすることが原因
である。このような異常放電により基板上に成膜中の薄
膜又はその下に形成されたヘッドパターン又は基板素地
にまで損傷を与え歩留りを大きく低下させていた。In the conventional sputtering process, an abnormal discharge often occurs on the surface of the thin film. This is because the thin film surface is charged by electrons entering the substrate during sputtering,
The cause is sparking with a grounded metal holder. Due to such abnormal discharge, the thin film being formed on the substrate, the head pattern formed under the thin film, or the substrate substrate is damaged, and the yield is greatly reduced.
本発明は上記従来技術の欠点に鑑みなされたものであっ
て、絶縁基板上にスパッタにより金属膜又は絶縁膜を形
成する場合の基板表面での異常放電を防止して成膜中の
薄膜、ヘッドパターン及び基板の損傷を防止した薄膜磁
気ヘッドの製造方法の提供を目的とする。The present invention has been made in view of the above-mentioned drawbacks of the prior art, in which a thin film during film formation by preventing abnormal discharge on the substrate surface when forming a metal film or an insulating film on an insulating substrate by sputtering, a head An object of the present invention is to provide a method for manufacturing a thin film magnetic head that prevents damage to a pattern and a substrate.
前記目的を達成するため、本発明では、ターゲットに対
向する電極上に絶縁基板を載置し、該絶縁基板を金属ホ
ルダにより電極上に固定保持して該絶縁基板上に薄膜を
スパッタ法により形成する薄膜磁気ヘッドの製造方法に
おいて、前記金属ホルダと成膜中の薄膜表面の電位をほ
ぼ等しくした状態でスパッタを行っている。In order to achieve the above object, in the present invention, an insulating substrate is placed on an electrode facing a target, the insulating substrate is fixed and held on the electrode by a metal holder, and a thin film is formed on the insulating substrate by a sputtering method. In the thin-film magnetic head manufacturing method described above, sputtering is performed with the metal holder and the surface of the thin-film during film formation being substantially equal in potential.
絶縁基板とこれを押える金属ホルダとの間の電位差が小
さいため基板とホルダ間の放電は発生しない。Since the potential difference between the insulating substrate and the metal holder that holds the insulating substrate is small, no discharge occurs between the substrate and the holder.
第１図は本発明に係る薄膜磁気ヘッド製造工程で用いる
スパッタ装置の実施例の構成図である。真空筐体21内に
高周波電源22に接続するターゲット23が配設される。こ
のターゲット23に対向して電極24が設けられる。電極24
は通常時はリード線29を介して接地されている。この電
極24上は絶縁基板25が載置される。絶縁基板25は金属ホ
ルダ26により電極24上に固定保持される。FIG. 1 is a block diagram of an embodiment of a sputtering apparatus used in the thin film magnetic head manufacturing process according to the present invention. A target 23 connected to a high frequency power source 22 is arranged in the vacuum housing 21. An electrode 24 is provided so as to face the target 23. Electrode 24
Is normally grounded via a lead wire 29. An insulating substrate 25 is placed on this electrode 24. The insulating substrate 25 is fixedly held on the electrode 24 by the metal holder 26.
スパッタを行う場合には、電極24のリード線29をＸ印の
ように遮断して接地から外した状態で行う。これにより
電極24はその上に搭載した絶縁基板25及び金属ホルダ26
とともに外部からの電気的導通が遮断され電気的に浮い
た状態となる。この状態でスパッタを行うことにより絶
縁基板25上に金属膜（又は絶縁膜）27が形成される。こ
の金属膜（又は絶縁膜）27の形成中に表面に電子28が帯
電する。このとき電極24は接地から外されているため電
極上に搭載した絶縁基板上の金属膜（又は絶縁膜）27と
ホルダ26との電位はほぼ等しい。従って表面帯電電子28
による金属膜（又は絶縁膜）27と金属ホルダ26との間の
放電は起らない。When performing sputtering, the lead wire 29 of the electrode 24 is cut off as shown by the X mark and is disconnected from the ground. As a result, the electrode 24 is mounted on the insulating substrate 25 and the metal holder 26.
At the same time, electrical continuity from the outside is cut off, and the state becomes electrically floating. By performing sputtering in this state, the metal film (or insulating film) 27 is formed on the insulating substrate 25. Electrons 28 are charged on the surface during the formation of the metal film (or insulating film) 27. At this time, since the electrode 24 is removed from the ground, the potentials of the metal film (or insulating film) 27 on the insulating substrate mounted on the electrode and the holder 26 are substantially equal. Therefore, surface charged electrons 28
No electric discharge occurs between the metal film (or insulating film) 27 and the metal holder 26 due to.
第２図に本発明の別の実施例の構成を示す。この実施例
においては、電極24は接地した状態とし、電極24上にポ
リイミドシート等の絶縁フィルム30を設け、この絶縁フ
ィルム30上に絶縁基板25及び金属ホルダ26を設置してい
る。これにより絶縁基板上に形成される金属膜（又は絶
縁膜）27と金属ホルダ26との電位はほぼ等しくなりスパ
ッタリング中の異常放電は起らない。その他の構成は第
１図の実施例と同様である。FIG. 2 shows the configuration of another embodiment of the present invention. In this embodiment, the electrode 24 is grounded, an insulating film 30 such as a polyimide sheet is provided on the electrode 24, and the insulating substrate 25 and the metal holder 26 are placed on the insulating film 30. As a result, the metal film (or insulating film) 27 formed on the insulating substrate and the metal holder 26 have substantially the same potential, and abnormal discharge does not occur during sputtering. Other configurations are similar to those of the embodiment shown in FIG.
以上のようなRFスパッタリングは薄膜磁気ヘッド製造工
程における膜厚0.5〜1.0μｍのAl2O3膜を成膜する場
合、あるいは膜厚0.1〜0.3μｍのTi膜を成膜する場合等
に用いられる。The RF sputtering as described above is used when forming an Al 2 O 3 film having a film thickness of 0.5 to 1.0 μm or a Ti film having a film thickness of 0.1 to 0.3 μm in the thin film magnetic head manufacturing process. .
本発明に係る薄膜磁気ヘッドの製造工程全体の概略を第
３図に示す。ウェハ（基板）１上に後述の方法により電
磁変換素子２が形成され、その後各電磁変換素子毎にチ
ップ３として分割して切出される。次に各チップ３を加
工してスライダ４を形成し、このスライダ４をシンバル
５の先端に取付けて磁気ヘッドを製造する。An outline of the whole manufacturing process of the thin film magnetic head according to the present invention is shown in FIG. Electromagnetic conversion elements 2 are formed on a wafer (substrate) 1 by a method described later, and thereafter each electromagnetic conversion element is divided into chips 3 and cut out. Next, each chip 3 is processed to form a slider 4, and the slider 4 is attached to the tip of the cymbal 5 to manufacture a magnetic head.
電磁変換素子の詳細を第４図に示す。Details of the electromagnetic conversion element are shown in FIG.
（ａ）図は素子全体図、（ｂ）図は磁極部の断面図であ
る。コイル7a,7bは２層に巻回形成され、各コイルを挟
んで３層の絶縁層8a,8b,8cが形成されている。コイル7
a,7bの端部には端子6a,6bが形成される。コイル7a,7bの
一部を挟んで上下一対の磁極9a,9bが設けられ、極端先
端にはギャップＧが形成される。FIG. 3A is an overall view of the element, and FIG. 1B is a cross-sectional view of a magnetic pole portion. The coils 7a, 7b are wound in two layers, and three layers of insulating layers 8a, 8b, 8c are formed so as to sandwich each coil. Coil 7
Terminals 6a and 6b are formed at the ends of a and 7b. A pair of upper and lower magnetic poles 9a and 9b are provided with a part of the coils 7a and 7b sandwiched therebetween, and a gap G is formed at the extreme tip.
上記構成の薄膜磁気ヘツドの製造工程を第５図に示す。
アルミナ・チタンカーバイド等からなるウエハ（基板）
10上に酸化アルミニウム（Al2O3）からなる保護膜11が
形成され、この保護膜11上に例えばパーマロイの下部磁
極12が形成される（ａ図）。次に下部磁極12上にギャッ
プ形成用絶縁層13が形成される（ｂ図）。次にこの絶縁
層13上に熱硬化性感光樹脂からなる下部絶縁層14がフォ
トプロセスにより形成される（ｃ図）。次に下部絶縁層
14上にコイル15がレジストのパターンを用いたフレーム
・メッキ法により形成される（ｄ図）。次にコイル15全
体上に同じ熱硬化性樹脂からなる上部絶縁層17をフォト
プロセスにより形成する（ｅ図）。次に上部絶縁層17上
に上部磁極18が形成される（ｆ図）。最後に上部保護膜
19を形成しウェハ10がチップ毎に切出され、各チップの
上面（Ｂ）側及びスライダ面（Ａ）側が研磨される（ｇ
図）。FIG. 5 shows the manufacturing process of the thin film magnetic head having the above structure.
Wafer (substrate) made of alumina, titanium carbide, etc.
A protective film 11 made of aluminum oxide (Al 2 O 3 ) is formed on the protective film 11, and a lower magnetic pole 12 of, for example, permalloy is formed on the protective film 11 (see FIG. A). Next, the insulating layer 13 for forming a gap is formed on the lower magnetic pole 12 (FIG. 6B). Next, a lower insulating layer 14 made of a thermosetting photosensitive resin is formed on the insulating layer 13 by a photo process (Fig. C). Next lower insulation layer
A coil 15 is formed on 14 by a frame plating method using a resist pattern (Fig. D). Next, an upper insulating layer 17 made of the same thermosetting resin is formed on the entire coil 15 by a photo process (Fig. E). Next, the upper magnetic pole 18 is formed on the upper insulating layer 17 (Fig. F). Finally the upper protective film
Then, the wafer 10 is cut out to form chips 19, and the upper surface (B) side and the slider surface (A) side of each chip are polished (g
Figure).
以上説明したように、本発明において、電極上の絶縁基
板表面とこれを押える金属ホルダの電位をほぼ等しくし
た状態でスパッタを行うため、絶縁基板上の帯電電子に
よる基板とホルダ間の異常放電が防止され、基板上の金
属膜、コイルパターン及び基板自体の損傷が防止され歩
留りが向上する。As described above, in the present invention, since sputtering is performed in a state in which the potentials of the insulating substrate surface on the electrode and the metal holder that holds the electrode are substantially equal, abnormal discharge between the substrate and the holder due to charged electrons on the insulating substrate occurs. Therefore, the metal film on the substrate, the coil pattern, and the substrate itself are prevented from being damaged, and the yield is improved.
第１図は本発明実施例の構成図，第２図は本発明の別の
実施例の構成図、第３図は本発明適用例の工程説明図、
第４図は本発明に係る薄膜磁気ヘッドの構成図、第５図
は本発明実施例の工程説明図である。 22……高周波電源、23……ターゲット、 24……電極、25……絶縁基板、 26……ホルダ、27……金属膜（又は絶縁膜）、 28……電子、30……絶縁フレーム。FIG. 1 is a block diagram of an embodiment of the present invention, FIG. 2 is a block diagram of another embodiment of the present invention, and FIG. 3 is a process explanatory diagram of an application example of the present invention.
FIG. 4 is a configuration diagram of a thin film magnetic head according to the present invention, and FIG. 5 is a process explanatory diagram of an embodiment of the present invention. 22 …… high frequency power supply, 23 …… target, 24 …… electrode, 25 …… insulating substrate, 26 …… holder, 27 …… metal film (or insulating film), 28 …… electronic, 30 …… insulating frame.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 堤 昭一 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (56)参考文献 特開 昭62−172708（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shoichi Tsutsumi 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture, Fujitsu Limited (56) References JP 62-172708 (JP, A)
Claims (3)
に絶縁基板（25）を載置し、該絶縁基板（25）を金属ホ
ルダ（26）により電極（24）上に固定保持して該絶縁基
板（25）上に金属膜又は絶縁膜（27）をスパッタ法によ
り形成する薄膜磁気ヘッドの製造方法において、前記金
属ホルダ（26）と絶縁基板（25）表面の電位をほぼ等し
くした状態でスパッタを行うことを特徴とする薄膜磁気
ヘッドの製造方法。1. An insulating substrate (25) is placed on an electrode (24) facing a target (23), and the insulating substrate (25) is fixed and held on the electrode (24) by a metal holder (26). In the method for manufacturing a thin film magnetic head in which a metal film or an insulating film (27) is formed on the insulating substrate (25) by a sputtering method, the potentials of the metal holder (26) and the surface of the insulating substrate (25) are made substantially equal. A method for manufacturing a thin film magnetic head, characterized in that sputtering is performed in the state.
ことにより該電極上の金属ホルダ（26）と絶縁基板（2
5）との間の電位差をなくしたことを特徴とする特許請
求の範囲第１項記載の薄膜磁気ヘッドの製造方法。2. A metal holder (26) on the electrode (2) and an insulating substrate (2) by interrupting electrical conduction to the electrode (24).
5. The method for manufacturing a thin film magnetic head according to claim 1, wherein the potential difference between the thin film magnetic head and the magnetic field is eliminated.
を設け、該絶縁性フィルム（30）上に前記金属ホルダ
（26）及び絶縁基板（25）を設置して該金属ホルダ（2
6）と絶縁基板（25）との間の電位差をなくしたことを
特徴とする特許請求の範囲第１項記載の薄膜磁気ヘッド
の製造方法。3. An insulating film (30) on the electrode (24)
And installing the metal holder (26) and the insulating substrate (25) on the insulating film (30).
6. The method for manufacturing a thin film magnetic head according to claim 1, wherein the potential difference between the insulating substrate (25) and the insulating substrate (6) is eliminated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62240645A JPH0715731B2 (en) | 1987-09-28 | 1987-09-28 | Method of manufacturing thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62240645A JPH0715731B2 (en) | 1987-09-28 | 1987-09-28 | Method of manufacturing thin film magnetic head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6484407A JPS6484407A (en) | 1989-03-29 |
| JPH0715731B2 true JPH0715731B2 (en) | 1995-02-22 |
Family
ID=17062577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62240645A Expired - Fee Related JPH0715731B2 (en) | 1987-09-28 | 1987-09-28 | Method of manufacturing thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0715731B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11279757A (en) * | 1998-03-27 | 1999-10-12 | Shincron:Kk | Method and device for forming thin film of composite metal compound |
| JPH11279758A (en) * | 1998-03-30 | 1999-10-12 | Shincron:Kk | Formation of metallic compound thin film and film forming device |
| JP2001011605A (en) * | 1999-06-30 | 2001-01-16 | Shincron:Kk | Method and equipment for forming compound thin film of multicomponent metal |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5137148A (en) * | 1974-09-25 | 1976-03-29 | Toyo Boseki | FUHOWAHORIESUTERUJUSHISOSEIBUTSU |
| JPS60185656U (en) * | 1984-05-21 | 1985-12-09 | 株式会社豊田中央研究所 | High frequency sputtering device |
| JPS6145918A (en) * | 1984-08-09 | 1986-03-06 | Nec Kansai Ltd | Measuring method of thickness of thin film |
-
1987
- 1987-09-28 JP JP62240645A patent/JPH0715731B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11279757A (en) * | 1998-03-27 | 1999-10-12 | Shincron:Kk | Method and device for forming thin film of composite metal compound |
| JPH11279758A (en) * | 1998-03-30 | 1999-10-12 | Shincron:Kk | Formation of metallic compound thin film and film forming device |
| JP2001011605A (en) * | 1999-06-30 | 2001-01-16 | Shincron:Kk | Method and equipment for forming compound thin film of multicomponent metal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6484407A (en) | 1989-03-29 |
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