JPH07151531A - Metallic foil thickness measuring device and method - Google Patents
Metallic foil thickness measuring device and methodInfo
- Publication number
- JPH07151531A JPH07151531A JP32087693A JP32087693A JPH07151531A JP H07151531 A JPH07151531 A JP H07151531A JP 32087693 A JP32087693 A JP 32087693A JP 32087693 A JP32087693 A JP 32087693A JP H07151531 A JPH07151531 A JP H07151531A
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- Prior art keywords
- metal foil
- thickness
- ray
- current
- rays
- Prior art date
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- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、金属箔の厚さを非破
壊、非接触で測定する測定装置およびその方法に関し、
特には、電解法または圧延法による金属箔の製造工程に
おける厚さのモニターに適したものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a non-destructive, non-contact measuring apparatus and method for measuring the thickness of a metal foil,
In particular, it is suitable for monitoring the thickness of the metal foil manufacturing process by the electrolytic method or rolling method.
【０００２】[0002]
【従来の技術】電解法または圧延法による金属箔の製造
工程においては、箔厚の制御などの工程管理のために、
その厚さを連続的に、短時間に、高い精度で、非破壊・
非接触で測定する必要がある。このような金属箔厚の測
定方法としては、特開平４−３３１３０８に開示されて
いるように、Ｘ線、β線などの電離放射線を金属箔厚に
照射し、透過する線量から厚さを測定することが知られ
ている。2. Description of the Related Art In the process of manufacturing a metal foil by an electrolytic method or a rolling method, in order to control the process such as controlling the foil thickness,
Its thickness is continuous, high-precision, non-destructive in a short time.
It is necessary to measure without contact. As a method for measuring the thickness of such a metal foil, as disclosed in JP-A-4-331308, the thickness of the metal foil is measured by irradiating the metal foil with ionizing radiation such as X-rays and β rays. Is known to do.
【０００３】Ｘ線、β線などの電離放射線の検出素子と
して、電離放射線に起因して半導体内に生じる電流パル
スをその表面に設けた電極により測定する半導体検出器
が知られ、電離放射線強度（線量）に比例する電流パル
スの単位時間における個数を計数することで測定してい
る。なお、このような半導体検出器は、CdTe、HgI2、Ga
Asなどの化合物半導体を用いた場合、バンドギャップが
広いため室温での動作が可能であり、また構成元素の原
子番号が大きいため小型で高い感度（検出効率）を得る
ことができる。As a detection element for ionizing radiation such as X-rays and β-rays, a semiconductor detector is known which measures a current pulse generated in a semiconductor due to ionizing radiation by an electrode provided on the surface thereof. It is measured by counting the number of current pulses proportional to (dose) per unit time. It should be noted that such semiconductor detectors include CdTe, HgI 2 , Ga
When a compound semiconductor such as As is used, it can operate at room temperature because of its wide bandgap, and it is small in size and high in sensitivity (detection efficiency) because of its large atomic number.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、従来の
電離放射線の検出方法では、金属箔の製造工程において
必要とされる箔厚測定精度を得ることが困難であった。However, with the conventional ionizing radiation detection method, it was difficult to obtain the foil thickness measurement accuracy required in the manufacturing process of the metal foil.
【０００５】すなわち、単位時間に計数される電流パル
スの個数Ｎとしたとき、放射線線量の統計精度は、Ｎの
平方根の逆数となる。しかし、この電流パルスの個数Ｎ
は、比較的放射線線量の低い領域でのみ比例する。これ
は、電流パルスの幅が有限である（通常、１０μsec程
度の）ため、これ以上の頻度の電流パルスを計数できな
いためである。（なお、電流パルスの幅は、半導体内を
ホールが移動する速度、増幅器の周波数帯域などにより
決まる。）したがって、所定の測定時間内に検出できる
パルス個数の上限が限定されるので、放射線線量の測定
精度も限定されるため、箔厚測定精度も充分でない。例
えば、測定時間を１秒とすると、統計精度は０．１％程
度となり、金属箔厚の精度として、０．１％以上を得る
ことができない。That is, assuming that the number N of current pulses counted in a unit time is N, the statistical accuracy of radiation dose is the reciprocal of the square root of N. However, the number N of this current pulse
Is proportional only in regions of relatively low radiation dose. This is because the width of the current pulse is finite (usually about 10 μsec), so that the frequency of the current pulse cannot be counted. (Note that the width of the current pulse is determined by the speed at which holes move in the semiconductor, the frequency band of the amplifier, etc.) Therefore, the upper limit of the number of pulses that can be detected within a given measurement time is limited, so the radiation dose Since the measurement accuracy is also limited, the foil thickness measurement accuracy is not sufficient. For example, if the measurement time is 1 second, the statistical accuracy is about 0.1%, and the accuracy of the metal foil thickness cannot be 0.1% or more.
【０００６】本発明は上記の課題を解決したもので、本
発明の目的は、短時間に高い精度で、安定に測定できる
金属箔の厚さの測定方法および装置を提供するものであ
る。The present invention has solved the above-mentioned problems, and an object of the present invention is to provide a method and apparatus for measuring the thickness of a metal foil which can be stably measured with high accuracy in a short time.
【０００７】[0007]
【課題を解決するための手段】本発明による金属箔厚の
測定装置は、(ａ)Ｘ線を発生するＸ線発生手段と、(ｂ)
測定対象の金属箔を透過した該Ｘ線が入射する高抵抗半
導体と、(ｃ)該高抵抗半導体の対向する一対の面にそれ
ぞれ設けられた一対の電極と、(ｄ)該電極間にバイアス
電圧を印加するバイアス手段と、(ｅ)該電極から前記高
抵抗半導体を流れる電流信号を検出する電流検出回路
と、(ｆ)該電流信号の時間平均値を演算する演算手段と
を含むものである。MEANS FOR SOLVING THE PROBLEMS A metal foil thickness measuring apparatus according to the present invention comprises (a) X-ray generating means for generating X-rays, and (b)
A high-resistance semiconductor on which the X-rays transmitted through the metal foil to be measured are incident, (c) a pair of electrodes respectively provided on a pair of opposing surfaces of the high-resistance semiconductor, and (d) a bias between the electrodes. Bias means for applying a voltage, (e) a current detection circuit for detecting a current signal flowing through the high resistance semiconductor from the electrode, and (f) a calculation means for calculating a time average value of the current signal.
【０００８】また、本発明による金属箔厚の測定方法
は、(ａ)測定対象の金属箔にＸ線を入射し、(ｂ)バイア
ス電圧が印加された高抵抗半導体に前記金属箔を透過し
たＸ線を入射し、(ｃ)該透過したＸ線の入射により前記
高抵抗半導体を流れる電流信号を検出し、(ｄ)該電流信
号の時間平均値に基づき前記金属箔の厚さを演算するも
のである。Further, in the method for measuring the metal foil thickness according to the present invention, (a) X-rays are incident on the metal foil to be measured, and (b) the metal foil is transmitted through the high resistance semiconductor to which a bias voltage is applied. An X-ray is incident, (c) a current signal flowing through the high resistance semiconductor is detected by the incident X-ray, and (d) a thickness of the metal foil is calculated based on a time average value of the current signal. It is a thing.
【０００９】さらに、測定対象である厚さｔの前記金属
箔に入射するＸ線のエネルギーＥがｄ2（ｅｘｐ（−μ
（Ｅ）ｔ））／ｄｔ2の値を零とする値の近傍に定めら
れている（ただし、μ（Ｅ）はＸ線のエネルギーＥにお
ける測定対象の金属の吸収係数である）こと、また、前
記高抵抗半導体がＣｄＴｅ、ＣｄＺｎＴｅなどのＣｄＴ
ｅ結晶からなることが望ましい。なお、Ｘ線のエネルギ
ーＥは、そのエネルギーにピークを持つ白色Ｘ線を用い
てもよい。Further, the energy E of X-rays incident on the metal foil having a thickness t to be measured is d 2 (exp (-μ
(E) t)) / dt 2 is set to a value near zero (where μ (E) is the absorption coefficient of the metal to be measured at X-ray energy E), and , The high resistance semiconductor is CdT such as CdTe or CdZnTe
It is desirable to be composed of e crystals. As the energy E of the X-ray, white X-ray having a peak at the energy may be used.
【００１０】[0010]
【作用および効果】本発明によれば、Ｘ線の検出部分に
高抵抗半導体を用いているので機械的な振動などに影響
されることなく、同時にその出力信号をアナログ電流信
号として取り出し、時間平均値として測定している。し
たがって、高い精度で、高い密度のＸ線量を測定できる
ので、金属箔の厚さを短時間で高い精度で測定すること
が可能となる。According to the present invention, since the high resistance semiconductor is used for the X-ray detecting portion, its output signal is simultaneously extracted as an analog current signal without being affected by mechanical vibration and the like, and time averaged. It is measured as a value. Therefore, since the X-ray dose of high density can be measured with high accuracy, the thickness of the metal foil can be measured with high accuracy in a short time.
【００１１】さらに、測定対象である厚さｔの前記金属
箔に入射するＸ線のエネルギーＥを、ｄ2（ｅｘｐ（−
μ（Ｅ）ｔ））／ｄｔ2の値を零とする値の近傍に定め
られているので、厚さの変化に対する検出線量の変化量
を高くすることができるので、さらに高い精度での測定
が可能となる。特に、検出部分の高抵抗半導体にＣｄＴ
ｅ結晶を用いた場合、吸収係数が高いため、装置を小型
にできる。Further, the energy E of X-rays incident on the metal foil having a thickness t to be measured is d 2 (exp (-
Since the value of μ (E) t)) / dt 2 is set near the value that makes it zero, it is possible to increase the amount of change in the detected dose with respect to the change in thickness. Is possible. Especially, CdT is added to the high resistance semiconductor of the detection part.
When the e crystal is used, the absorption coefficient is high, so that the device can be downsized.
【００１２】[0012]
【実施例】本発明の一実施例である金属箔厚の測定装置
について、図１を用いて以下詳細に説明する。EXAMPLE A metal foil thickness measuring apparatus according to an example of the present invention will be described in detail below with reference to FIG.
【００１３】Ｘ線１をＸ線発生管２により発生し、測定
対象である金属箔３（３５μｍ、Ｆｅ箔）に対して照射
する。Ｘ線発生管２には、Ｘ線電源４から４０ＫｅＶの
管電圧を供給しており、２０ｍＡの管電流でＸ線を発生
する。このＸ線のエネルギー分布は、ほぼ０ＫｅＶから
４０ＫｅＶまで分布しており、１９ＫｅＶにピークをも
つ。なお、Ｘ線発生管２の管電圧を変えることでＸ線の
エネルギー分布を連続的に変えることができる。An X-ray 1 is generated by an X-ray generation tube 2 and is applied to a metal foil 3 (35 μm, Fe foil) which is an object of measurement. A tube voltage of 40 KeV is supplied from the X-ray power source 4 to the X-ray generation tube 2, and an X-ray is generated with a tube current of 20 mA. The energy distribution of this X-ray is distributed from approximately 0 KeV to 40 KeV, and has a peak at 19 KeV. The energy distribution of the X-rays can be continuously changed by changing the tube voltage of the X-ray generating tube 2.
【００１４】金属箔３を透過したＸ線１’は、半導体検
出素子５に入射する。半導体検出素子５は、塩素ドープ
高抵抗ＣｄＴｅ半導体単結晶基板（３０×３０ｍｍ、厚
さ２ｍｍ）の対向する主面に電極を形成したものであ
る。そのカソード電極Ｋは、無電解めっきにより形成し
たＰｔ（白金）電極であり、電子に対する障壁の高さ
（０．９ｅＶ）がホールに対する障壁の高さ（０．６ｅ
Ｖ）よりも高い。また、そのアノード電極Ａは、真空蒸
着により形成されたＩｎ（インジウム）電極であり、電
子に対する障壁の高さ（０．１ｅＶ）がホールに対する
障壁の高さ（１．４ｅＶ）よりも低い。なお、両電極を
同一の材質で構成することもできるが、このような電極
を用いることで暗電流を低減でき、検出精度が向上す
る。The X-ray 1'transmitted through the metal foil 3 enters the semiconductor detection element 5. The semiconductor detection element 5 is one in which electrodes are formed on opposing main surfaces of a chlorine-doped high resistance CdTe semiconductor single crystal substrate (30 × 30 mm, thickness 2 mm). The cathode electrode K is a Pt (platinum) electrode formed by electroless plating, and the height of the barrier for electrons (0.9 eV) is the height of the barrier for holes (0.6 eV).
Higher than V). Further, the anode electrode A is an In (indium) electrode formed by vacuum evaporation, and the height of the barrier against electrons (0.1 eV) is lower than the height of the barrier against holes (1.4 eV). Although both electrodes can be made of the same material, dark current can be reduced and detection accuracy can be improved by using such electrodes.
【００１５】半導体検出素子５のカソード電極Ｋ・アノ
ード電極Ａ間にデジタル電流計７内の電流検出回路８を
介してバイアス電源６から定電圧のバイアス電圧（５０
Ｖ）が印加されている。電流検出回路７により、半導体
検出素子５を流れる電流を検出している。電流検出回路
７の出力は、デジタル電流計７内のＡ／Ｄ変換回路９に
入力される。このＡ／Ｄ変換回路９は、二重積分型変換
回路であり、積分時間内の電流信号を積分し、その時間
平均電流値に変換する演算手段として動作する。A constant bias voltage (50) is applied between the cathode electrode K and the anode electrode A of the semiconductor detection element 5 from the bias power source 6 via the current detection circuit 8 in the digital ammeter 7.
V) is being applied. The current detection circuit 7 detects the current flowing through the semiconductor detection element 5. The output of the current detection circuit 7 is input to the A / D conversion circuit 9 in the digital ammeter 7. The A / D conversion circuit 9 is a double integration type conversion circuit, and operates as a calculation unit that integrates a current signal within an integration time and converts it into a time average current value.
【００１６】この時間平均電流値により、金属箔３を透
過したＸ線１’の強度を高精度に測定することができ
る。すなわち、Ｘ線１’の強度を１０8/secと充分高く
することで、統計精度を０．０１％を得ることができ
る。また、デジタル電流計７の測定精度は、積分時間を
１秒程度とすることにより、０．０１％以下とすること
ができる。したがって、金属箔３を透過したＸ線１’の
強度を０．０１％の精度で計測できるため、金属箔３の
膜厚を０．０１％の精度で測定できる。Ｘ線１’の強度
を充分強く（１０6/sec以上と）し、電流を平均化する
時間（積分時間時間）を統計精度と電流測定精度が同程
度になるように設定することで、測定時間および測定精
度を最適とすることができる。なお、電流信号の時間平
均値を演算する演算手段としてアナログ積分回路を用い
ることもできるが、積分型のＡ／Ｄ変換回路９を用いて
いることで電流測定精度を容易に向上させることができ
る。With this time average current value, the intensity of the X-ray 1'transmitted through the metal foil 3 can be measured with high accuracy. That is, statistical accuracy of 0.01% can be obtained by sufficiently increasing the intensity of the X-ray 1'to 10 8 / sec. Further, the measurement accuracy of the digital ammeter 7 can be set to 0.01% or less by setting the integration time to about 1 second. Therefore, since the intensity of the X-ray 1 ′ transmitted through the metal foil 3 can be measured with an accuracy of 0.01%, the film thickness of the metal foil 3 can be measured with an accuracy of 0.01%. Measure by setting the intensity of X-ray 1'strong enough (10 6 / sec or more) and setting the time to average the current (integration time) so that the statistical accuracy and the current measurement accuracy are about the same. The time and measurement accuracy can be optimized. Although an analog integrating circuit can be used as the calculating means for calculating the time average value of the current signal, the accuracy of current measurement can be easily improved by using the integrating A / D conversion circuit 9. .
【００１７】次に、Ｘ線のエネルギーＥを変化させた場
合の検出感度の変化を図２に示す。Ｘ線発生管２に印加
する管電圧を２０〜６５ＫｅＶとして、ピークのＸ線エ
ネルギーを１０〜３０ＫｅＶと変化させた場合の検出感
度（Ｆｅ箔の厚さが１８、２５、３５および７０μｍの
場合）を示している。この図から、それぞれの厚さにお
いてＸ線のエネルギーＥが１４、１７、１９および２４
ＫｅＶの場合に検出感度が最も高いことがわかる。ま
た、そのＸ線のエネルギーＥが、２０％程度ずれていて
も検出感度に大きな違いのないことがわかる。Next, FIG. 2 shows changes in detection sensitivity when the energy E of X-rays is changed. Detection sensitivity when the tube voltage applied to the X-ray generation tube 2 is 20 to 65 KeV and the peak X-ray energy is changed to 10 to 30 KeV (when the thickness of the Fe foil is 18, 25, 35 and 70 μm) Is shown. From this figure, the X-ray energy E is 14, 17, 19 and 24 at each thickness.
It can be seen that the detection sensitivity is highest in the case of KeV. Further, it can be seen that even if the energy E of the X-rays deviates by about 20%, there is no great difference in detection sensitivity.
【００１８】箔厚ｔの場合の検出感度ｋは、μ（Ｅ）を
Ｘ線のエネルギーＥにおける測定対象の金属の吸収係数
として、ｅｘｐ（−μ（Ｅ）ｔ）のｔの微分値である、The detection sensitivity k in the case of the foil thickness t is the differential value of t of exp (-μ (E) t), where μ (E) is the absorption coefficient of the metal to be measured at the energy E of the X-ray. ,
【式１】ｋ＝ｄ（ｅｘｐ（−μ（Ｅ）ｔ））／ｄｔ で与えられる。さらに、この検出感度ｋが最も高くなる
のは、さらに、この検出感度ｋの微分値が０となる近傍
である。したがって、Formula 1 is given by k = d (exp (-μ (E) t)) / dt. Furthermore, the detection sensitivity k becomes highest in the vicinity where the differential value of the detection sensitivity k becomes 0. Therefore,
【式２】ｄｋ／ｄｔ＝ｄ2（ｅｘｐ（−μ（Ｅ）ｔ））
／ｄｔ2 が０となる近傍とすることで検出感度ｋを最も高くでき
る。[Formula 2] dk / dt = d 2 (exp (-μ (E) t))
The detection sensitivity k can be maximized by setting / dt 2 to be near 0.
【００１９】したがって、測定対象の金属箔の材質、お
よびその厚さに応じてＸ線発生管２に印加する管電圧を
上記式２の条件を満足するように設定することで高い測
定精度を得ることが可能である。なお、Ｘ線発生管以外
のＸ線発生手段を用いた場合にも上記の条件を満足する
ようにＸ線のエネルギーＥを定めればよい。Therefore, a high measurement accuracy is obtained by setting the tube voltage applied to the X-ray generation tube 2 so as to satisfy the condition of the above expression 2 in accordance with the material of the metal foil to be measured and its thickness. It is possible. The energy E of the X-ray may be set so as to satisfy the above condition even when an X-ray generating means other than the X-ray generating tube is used.
【図１】本発明のよる金属箔厚の測定装置を説明するた
めの概念図である。FIG. 1 is a conceptual diagram for explaining a metal foil thickness measuring device according to the present invention.
【図２】本発明におけるＸ線のエネルギーＥを変化させ
た場合の検出感度の変化を示す図である。FIG. 2 is a diagram showing a change in detection sensitivity when the energy E of X-rays is changed in the present invention.
１ Ｘ線 ２ Ｘ線発生管 ３ 金属箔 ４ Ｘ線電源 ５ 半導体検出素子 ６ バイアス電源 ７ デジタル電流計 ８ 電流検出回路 ９ Ａ／Ｄ変換回路 1 X-ray 2 X-ray generation tube 3 Metal foil 4 X-ray power supply 5 Semiconductor detection element 6 Bias power supply 7 Digital ammeter 8 Current detection circuit 9 A / D conversion circuit
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【手続補正書】[Procedure amendment]
【提出日】平成６年１月１２日[Submission date] January 12, 1994
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００３[Name of item to be corrected] 0003
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００３】Ｘ線、β線などの電離放射線の検出素子と
して、電離放射線に起因して電離箱内に生じる電流パル
スをその表面に設けた電極により測定する検出方法が知
られ、電離放射線強度（線量）に比例する電流パルスの
単位時間における個数を計数することで測定している。As a detection element for ionizing radiation such as X-rays and β-rays, there is known a detection method in which a current pulse generated in the ionization chamber due to ionizing radiation is measured by an electrode provided on the surface of the ionizing radiation. It is measured by counting the number of current pulses proportional to (dose) per unit time.
【手続補正２】[Procedure Amendment 2]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】０００５[Name of item to be corrected] 0005
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【０００５】すなわち、単位時間に計数される電流パル
スの個数Ｎとしたとき、放射線線量の統計精度は、Ｎの
平方根の逆数となる。しかし、この電流パルスの個数Ｎ
は、比較的放射線線量の低い領域でのみ比例する。これ
は、電流パルスの幅が有限である（通常、１０μｓｅｃ
程度の）ため、これ以上の頻度の電流パルスを計数でき
ないためである。（なお、電流パルスの幅は、電離され
た電子が移動する速度、増幅器の周波数帯域などにより
決まる。）したがって、所定の測定時間内に検出できる
パルス個数の上限が限定されるので、放射線線量の測定
精度も限定されるため、箔厚測定精度も充分でない。例
えば、測定時間を１秒とすると、統計精度は０．１％程
度となり、金属箔厚の精度として、０．１％以上を得る
ことができない。That is, assuming that the number N of current pulses counted in a unit time is N, the statistical accuracy of radiation dose is the reciprocal of the square root of N. However, the number N of this current pulse
Is proportional only in regions of relatively low radiation dose. This is because the width of the current pulse is finite (typically 10 μsec).
Therefore, it is not possible to count current pulses with a frequency higher than this. (Note that the width of the current pulse is determined by the speed at which the ionized electrons move, the frequency band of the amplifier, etc.) Therefore, the upper limit of the number of pulses that can be detected within a given measurement time is limited, so that the radiation dose Since the measurement accuracy is also limited, the foil thickness measurement accuracy is not sufficient. For example, if the measurement time is 1 second, the statistical accuracy is about 0.1%, and the accuracy of the metal foil thickness cannot be 0.1% or more.
Claims (5)
(ｂ)測定対象の金属箔を透過した該Ｘ線が入射する高抵
抗半導体と、(ｃ)該高抵抗半導体の対向する一対の面に
それぞれ設けられた一対の電極と、(ｄ)該電極間にバイ
アス電圧を印加するバイアス手段と、(ｅ)該電極から前
記高抵抗半導体を流れる電流信号を検出する電流検出回
路と、(ｆ)該電流信号の時間平均値を演算する演算手段
とを含むことを特徴とする金属箔厚の測定装置。1. (a) X-ray generating means for generating X-rays,
(b) a high resistance semiconductor on which the X-rays transmitted through the metal foil to be measured are incident, (c) a pair of electrodes respectively provided on a pair of opposing surfaces of the high resistance semiconductor, (d) the electrode Bias means for applying a bias voltage therebetween, (e) a current detection circuit for detecting a current signal flowing through the high-resistance semiconductor from the electrode, and (f) operation means for calculating a time average value of the current signal. An apparatus for measuring the thickness of a metal foil, which includes:
(ｂ)バイアス電圧が印加された高抵抗半導体に前記金属
箔を透過したＸ線を入射し、(ｃ)該透過したＸ線の入射
により前記高抵抗半導体を流れる電流信号を検出し、
(ｄ)該電流信号の時間平均値に基づき前記金属箔の厚さ
を演算することを特徴とする金属箔厚の測定方法。2. (a) Injecting X-rays into a metal foil to be measured,
(b) irradiating a high resistance semiconductor to which a bias voltage is applied with X-rays transmitted through the metal foil, and (c) detecting a current signal flowing through the high resistance semiconductor by incidence of the transmitted X-rays,
(d) A method for measuring a metal foil thickness, which comprises calculating the thickness of the metal foil based on a time average value of the current signal.
射するＸ線のエネルギーＥがｄ2（ｅｘｐ（−μ（Ｅ）
ｔ））／ｄｔ2の値を零とする値の近傍に定められてい
る（ただし、μ（Ｅ）はＸ線のエネルギーＥにおける測
定対象の金属の吸収係数である）ことを特徴とする請求
項２記載の金属箔厚の測定方法。3. The energy E of X-rays incident on the metal foil having a thickness t to be measured is d 2 (exp (−μ (E)
t)) / dt 2 is set to a value near zero (where μ (E) is the absorption coefficient of the metal to be measured at X-ray energy E). Item 2. A method for measuring a metal foil thickness according to item 2.
る請求項１記載の金属箔厚の測定装置。4. The metal foil thickness measuring device according to claim 1, wherein the high resistance semiconductor is made of a CdTe crystal.
る請求項２乃至３記載の金属箔厚の測定方法。5. The method for measuring the metal foil thickness according to claim 2, wherein the high-resistance semiconductor is made of CdTe crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32087693A JPH07151531A (en) | 1993-11-29 | 1993-11-29 | Metallic foil thickness measuring device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32087693A JPH07151531A (en) | 1993-11-29 | 1993-11-29 | Metallic foil thickness measuring device and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07151531A true JPH07151531A (en) | 1995-06-16 |
Family
ID=18126254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32087693A Pending JPH07151531A (en) | 1993-11-29 | 1993-11-29 | Metallic foil thickness measuring device and method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07151531A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI404911B (en) * | 2010-02-23 | 2013-08-11 | Test Research Inc | Method for thickness calibraiton and measuring thickness of material |
| KR101320312B1 (en) * | 2011-12-09 | 2013-10-22 | 주식회사 포스코 | System for measuring thickness of steel plate using plc with digital signal process functionality |
| CN108027235A (en) * | 2015-12-10 | 2018-05-11 | 株式会社东芝 | Apparatus for measuring thickness |
-
1993
- 1993-11-29 JP JP32087693A patent/JPH07151531A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI404911B (en) * | 2010-02-23 | 2013-08-11 | Test Research Inc | Method for thickness calibraiton and measuring thickness of material |
| KR101320312B1 (en) * | 2011-12-09 | 2013-10-22 | 주식회사 포스코 | System for measuring thickness of steel plate using plc with digital signal process functionality |
| CN108027235A (en) * | 2015-12-10 | 2018-05-11 | 株式会社东芝 | Apparatus for measuring thickness |
| CN108027235B (en) * | 2015-12-10 | 2020-07-07 | 株式会社东芝 | Thickness measuring device |
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