JPH07142802A - External harmonic generating laser oscillator - Google Patents

External harmonic generating laser oscillator

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Publication number
JPH07142802A
JPH07142802A JP28470993A JP28470993A JPH07142802A JP H07142802 A JPH07142802 A JP H07142802A JP 28470993 A JP28470993 A JP 28470993A JP 28470993 A JP28470993 A JP 28470993A JP H07142802 A JPH07142802 A JP H07142802A
Authority
JP
Japan
Prior art keywords
harmonic
laser
light
external
oscillator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28470993A
Other languages
Japanese (ja)
Other versions
JP2727935B2 (en
Inventor
Yukio Kudokoro
之夫 久所
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP5284709A priority Critical patent/JP2727935B2/en
Publication of JPH07142802A publication Critical patent/JPH07142802A/en
Application granted granted Critical
Publication of JP2727935B2 publication Critical patent/JP2727935B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To increase the speed of the start of an external harmonic generating laser oscillator and improve the output stability of the oscillator. CONSTITUTION:In an external harmonic generating laser oscillator 10, the second harmonic light (wavelength 532nm) of a CM-Q switch Nd:YAG laser which is emitted from a second harmonic light oscillator 11 is made to enter a beta-BBO crystal 15 to generate the fourth harmonic light (wavelength 266nm) and, at the same time, the switching of the fourth harmonic light is performed by the control of the polarization of the second harmonic light by using a Pockel cell 13 provided between a lambda/2 plate 12 with a rotary mechanism and a condensing lens 14.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、外部高調波発生レーザ
発振器に関し、特に、非線形光学結晶を用いた外部高調
波発生方式による外部高調波発生レーザ発振器に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an external harmonic generating laser oscillator, and more particularly to an external harmonic generating laser oscillator using an external harmonic generating system using a nonlinear optical crystal.

【0002】[0002]

【従来の技術】従来、非線形光学結晶を用いた外部高調
波発生方式による外部高調波発生レーザ発振器として
は、波長1.064μmのNd:YAGレーザ光に対し
て波長532nmの第2高調波光(SHG光)を発生す
るもの、および、Nd:YAGレーザの内部共振器型S
HG発振器の第3高調波光(THG光)または第4高調
波光(FHG光)を発生するものがある。なお、このよ
うな外部高調波発生レーザ発振器は、可視光や紫外光に
対する波長変換を共振器外部で行い、しかも、発生した
高調波光を安定させるとともに、光パルスの立ち上り時
間の短い高速スイッチング動作を必要とする場合に用い
られる。
2. Description of the Related Art Conventionally, as an external harmonic generating laser oscillator using an external harmonic generating method using a nonlinear optical crystal, a second harmonic light (SHG) having a wavelength of 532 nm is used for an Nd: YAG laser light having a wavelength of 1.064 μm. That emits light) and the internal cavity type S of the Nd: YAG laser
There is one that generates the third harmonic light (THG light) or the fourth harmonic light (FHG light) of the HG oscillator. Incidentally, such an external harmonic generation laser oscillator performs wavelength conversion for visible light or ultraviolet light outside the resonator, and also stabilizes the generated harmonic light, and performs high-speed switching operation with a short rise time of the optical pulse. Used when needed.

【0003】また、発生する高調波光をスイッチングす
る場合は、高調波光を発生させる非線形光学結晶に基本
波であるレーザ光を入射させる際に、このレーザ光自体
をオン/オフすることで高調波光のオン/オフをさせて
いた。
Further, in the case of switching the generated harmonic light, when the laser light which is the fundamental wave is made incident on the nonlinear optical crystal which generates the harmonic light, the laser light itself is turned on / off to generate the harmonic light. I was turning it on and off.

【0004】[0004]

【発明が解決しようとする問題】しかしながら、上述し
た従来の外部高調波発生レーザ発振器では、非線形光学
結晶に入射させるレーザ光をスイッチングしたりあるい
は変調周波数を変えているため、非線形光学結晶に入射
させるレーザ光の入力平均パワーも変わる。非線形光学
結晶による高調波光の発生の原理として、入射光と変換
光(高調波光・混合波光)の位相速度を合わせる(位相
整合)というのは、言い換えれば入射光と変換光の屈折
率整合をとることである。結晶の屈折率は結晶の温度に
よって変わるものであるから、位相整合(屈折率整合)
を温度整合で実現する場合はいうに及ばず、角度整合す
る際にも、結晶の温度が変わると、位相整合条件がずれ
て変換効率が変化することになる。
However, in the above-described conventional external harmonic generation laser oscillator, the laser light incident on the nonlinear optical crystal is switched or the modulation frequency is changed, so that it is incident on the nonlinear optical crystal. The input average power of laser light also changes. The principle of generating harmonic light by a nonlinear optical crystal is to match the phase velocities of incident light and converted light (harmonic light / mixed wave light) (phase matching). In other words, the refractive index matching of incident light and converted light is taken. That is. Since the refractive index of the crystal changes depending on the temperature of the crystal, phase matching (refractive index matching)
Not only in the case where the temperature matching is realized, but also in the angle matching, if the temperature of the crystal changes, the phase matching condition shifts and the conversion efficiency changes.

【0005】一例として、非線形光学結晶としてβ−B
BO結晶を用い、Nd:YAGの第2高調波光(波長5
32nm)をβ−BBO結晶に入射して第4高調波光
(波長266nm)に変換するときの変換効率と結晶温
度との関係を求めた一シュミレーション結果を図3に示
す。同図において、縦軸は、変換効率ηm を示し、横軸
は、位相整合状態の結晶温度からの結晶温度変化分dT
を示している。このシュミレーション結果より、結晶温
度が位相整合状態の結晶温度から約4.6℃変化しただ
けで、変換効率ηm が半分にまで減少することがわか
る。
As an example, β-B is used as a nonlinear optical crystal.
Using a BO crystal, Nd: YAG second harmonic light (wavelength 5
32 nm) is incident on the β-BBO crystal and converted into the fourth harmonic light (wavelength 266 nm), and one simulation result for obtaining the relationship between the conversion efficiency and the crystal temperature is shown in FIG. In the figure, the vertical axis represents the conversion efficiency η m , and the horizontal axis represents the change in crystal temperature dT from the crystal temperature in the phase-matched state.
Is shown. From this simulation result, it is understood that the conversion efficiency η m is reduced to half by only changing the crystal temperature by about 4.6 ° C. from the phase-matched crystal temperature.

【0006】非線形光学結晶には多かれ少なかれ若干の
吸収があるので、非線形光学結晶に入射されるレーザ光
の平均パワーが変わると、非線形光学結晶自身の温度も
変わり、非線形光学結晶の位相整合条件が変化する。図
3のシュミレーション結果より非線形光学結晶の温度が
瞬間的に5℃程度上昇することを防ぐために、非線形光
学結晶に対して恒温化制御することが考えられるが、通
常は熱伝達時間が大きいため、このような恒温化制御は
困難である。特に、非線形光学結晶に入射されるレーザ
光のパワーが1W程度になると、非線形光学結晶の温度
変化の影響が大きくなり、入射されるレーザ光を断続さ
せる場合には、変換される高調波光の立ち上がり特性
(スイッチング特性)が極端に悪くなるという問題が発
生する。
Since the non-linear optical crystal has more or less little absorption, if the average power of the laser light incident on the non-linear optical crystal changes, the temperature of the non-linear optical crystal itself changes and the phase matching condition of the non-linear optical crystal changes. Change. From the simulation result of FIG. 3, in order to prevent the temperature of the non-linear optical crystal from rising instantaneously by about 5 ° C., it is conceivable that the non-linear optical crystal is thermostatically controlled. However, since the heat transfer time is usually long, Such constant temperature control is difficult. Particularly, when the power of the laser light incident on the nonlinear optical crystal becomes about 1 W, the influence of the temperature change of the nonlinear optical crystal becomes large, and when the incident laser light is interrupted, the rise of the harmonic light to be converted is increased. There arises a problem that the characteristics (switching characteristics) are extremely deteriorated.

【0007】たとえば、パワーが5WのNd:YAGレ
ーザの第2高調波光をβ−BBO結晶に照射させて第4
高調波光を発生させる場合には、数秒程度の時間第2高
調波光を一旦オフするだけで、第4高調波光の0%から
100%への立ち上り時間として秒単位の立ち上り時間
が必要となる。その結果、レーザ加工機に使用する場合
には、レーザ光のオン/オフは頻繁に必要であるため、
秒単位の立ち上り時間が必要であることは、実用上の大
きな障害となっていた。
For example, the second harmonic light of an Nd: YAG laser having a power of 5 W is irradiated onto the β-BBO crystal to produce a fourth harmonic light.
When the harmonic light is generated, the second harmonic light is temporarily turned off for a time of about several seconds, and the rising time in seconds is required as the rising time from 0% to 100% of the fourth harmonic light. As a result, when used in a laser beam machine, it is necessary to turn on / off the laser light frequently,
The need for a rise time in seconds has been a major obstacle to practical use.

【0008】なお、ポッケルスセルを用いて高速スイッ
チングを行うものとしては、たとえば、Qスイッチ時刻
後からのポッケルスセルへの印加電圧の変化を、レーザ
ロッドの励起エネルギの大きさに依存する巨大パルスの
発生時刻と関係づけて制御するポッケルスセル制御回路
を備えることにより、上記励起エネルギの変動に対して
レーザ出力を安定化するパルスレーザ装置(特開昭61
−168979号公報)などが提案されているが、外部
高調波発生レーザ発振器の立ち上り時間の高速化の観点
からポッケルスセルを用いる従来例はない。
In order to perform high-speed switching using the Pockels cell, for example, a change in the voltage applied to the Pockels cell after the Q-switch time is changed by a huge pulse depending on the magnitude of the excitation energy of the laser rod. A pulse laser device that stabilizes the laser output against the fluctuations in the excitation energy by providing a Pockels cell control circuit that controls in association with the time of occurrence (Japanese Patent Laid-Open No. Sho 61-61).
However, there is no conventional example that uses a Pockels cell from the viewpoint of speeding up the rise time of the external harmonic generation laser oscillator.

【0009】本発明の目的は、立ち上り時間の高速化お
よび出力安定度の向上が図れる外部高調波発生レーザ発
振器を提供することにある。
An object of the present invention is to provide an external harmonic wave generating laser oscillator capable of achieving a faster rise time and improved output stability.

【0010】[0010]

【課題を解決するための手段】本発明の外部高調波発生
レーザ発振器は、所定の偏光方向を有する基本波レーザ
光または高調波レーザ光を出射するレーザ発振器と、該
レーザ発振器から出射された前記基本波レーザ光または
前記高調波レーザ光が入射される1/2波長板と、該1
/2波長板を透過した前記基本波レーザ光または前記高
調波レーザ光を他の高調波レーザ光に変換する非線形光
学結晶とを含む外部高調波発生レーザ発振器において、
前記1/2波長板と前記非線形光学結晶との間に設けら
れた、印加電圧に応じて前記基本波レーザ光または前記
高調波レーザ光の偏光面を回転させることができる電気
光学素子を含むことを特徴とする。
An external harmonic generating laser oscillator according to the present invention is a laser oscillator for emitting a fundamental laser beam or a harmonic laser beam having a predetermined polarization direction, and the laser oscillator for emitting an external harmonic wave. A half-wave plate on which the fundamental laser light or the harmonic laser light is incident;
An external harmonic generation laser oscillator including a non-linear optical crystal that converts the fundamental laser light or the harmonic laser light that has passed through a 1/2 wavelength plate into another harmonic laser light,
An electro-optical element provided between the half-wave plate and the non-linear optical crystal and capable of rotating the polarization plane of the fundamental laser light or the harmonic laser light in accordance with an applied voltage. Is characterized by.

【0011】ここで、前記印加電圧の電圧値を制御する
印加電圧制御手段をさらに含んでもよく、前記電気光学
素子がポッケルスセルであってもよい。
Here, an applied voltage control means for controlling the voltage value of the applied voltage may be further included, and the electro-optical element may be a Pockels cell.

【0012】または、所定の偏光方向を有する基本波レ
ーザ光または高調波レーザ光を出射するレーザ発振器
と、該レーザ発振器から出射された前記基本波レーザ光
または前記高調波レーザ光が入射される1/2波長板
と、該1/2波長板を透過した前記基本波レーザ光また
は前記高調波レーザ光を他の高調波レーザ光に変換する
非線形光学結晶とを含む外部高調波発生レーザ発振器に
おいて、前記1/2波長板と前記非線形光学結晶との間
に設けられた、印加磁界に応じて前記基本波レーザ光ま
たは前記高調波レーザ光の偏光面を回転させることがで
きる磁気光学素子を含むことを特徴とする。
Alternatively, a laser oscillator that emits a fundamental wave laser beam or a harmonic wave laser beam having a predetermined polarization direction, and the fundamental wave laser beam or the harmonic wave laser beam emitted from the laser oscillator enters 1 An external harmonic generation laser oscillator including a / 2 wavelength plate and a nonlinear optical crystal that converts the fundamental laser light or the harmonic laser light transmitted through the 1/2 wavelength plate into another harmonic laser light, A magneto-optical element provided between the half-wave plate and the non-linear optical crystal and capable of rotating the polarization plane of the fundamental laser light or the harmonic laser light according to an applied magnetic field. Is characterized by.

【0013】ここで、前記印加磁界の値を制御する印加
磁界制御手段をさらに含んでもよく、前記磁気光学素子
がファラデーセルであってもよい。
Here, an applied magnetic field control means for controlling the value of the applied magnetic field may be further included, and the magneto-optical element may be a Faraday cell.

【0014】[0014]

【作用】本発明の外部高調波発生レーザ発振器では、非
線形光学結晶に入射される基本波レーザ光または高調波
レーザ光は、電気光学素子または磁気光学素子を透過し
たのち、一定出力にて連続で発振された状態で非線形光
学結晶に入射されるため、非線形光学結晶の中心部での
温度が変わることがない。また、非線形光学結晶での位
相整合は温度整合や角度整合のいずれにおいても非線形
光学結晶の主軸に対する偏光方向によって変換効率が調
整できるので、非線形光学結晶に入射させる基本波レー
ザ光または高調波レーザ光の偏光面を変えることによっ
て、基本波レーザ光または高調波レーザ光の強度を一定
としたままで、高調波発生の強度を可変させることがで
きる。
In the external harmonic generating laser oscillator according to the present invention, the fundamental laser light or the harmonic laser light incident on the nonlinear optical crystal is continuously transmitted at a constant output after passing through the electro-optical element or the magneto-optical element. Since the light enters the nonlinear optical crystal in the oscillated state, the temperature at the center of the nonlinear optical crystal does not change. Further, in the phase matching in the nonlinear optical crystal, the conversion efficiency can be adjusted by the polarization direction with respect to the principal axis of the nonlinear optical crystal in both the temperature matching and the angle matching, so that the fundamental laser light or the harmonic laser light incident on the nonlinear optical crystal can be adjusted. By changing the polarization plane of, the intensity of the harmonic generation can be varied while keeping the intensity of the fundamental laser light or the harmonic laser light constant.

【0015】[0015]

【実施例】以下、本発明の実施例について、図面を参照
して説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0016】図1は、本発明の外部高調波発生レーザ発
振器の第1の実施例を示す概略構成図である。
FIG. 1 is a schematic configuration diagram showing a first embodiment of an external harmonic generating laser oscillator according to the present invention.

【0017】外部高調波発生レーザ発振器10は、CW
−QスイッチNd:YAGレーザの第2高調波光(波長
532nm)をβ−BBO結晶15に入射させて第4高
調波光(波長266nm)を発生させるためのものであ
るとともに、ポッケルスセル13を用いた第2高調波光
の偏光度制御によって第4高調波光のスイッチングを行
うものである。
The external harmonic generating laser oscillator 10 is a CW
The Q-switch Nd: YAG laser second harmonic light (wavelength 532 nm) is incident on the β-BBO crystal 15 to generate fourth harmonic light (wavelength 266 nm), and the Pockels cell 13 was used. The fourth harmonic light is switched by controlling the polarization degree of the second harmonic light.

【0018】外部高調波発生レーザ発振器10は、波長
532nmの第2高調波光を出射する内部共振器型の第
2高調波光発振器11と、第2高調波光発振器11から
出射された第2高調波光が入射される回転機構付きλ/
2板12と、回転機構付きλ/2板12を透過した第2
高調波光が入射されるポッケルスセル13と、ポッケル
スセル13を透過した第2高調波光が入射される集光レ
ンズ14と、集光レンズ14で集光された第2高調波光
を第4高調波光に変換するためのβ−BBO結晶15
と、β−BBO結晶15の出射側に設けられた、波長5
32nmの第2高調波光を透過するとともに波長266
nmの第4高調波光を全反射するようにコーティングさ
れた第1のダイクロイックミラー16と、第1のダイク
ロイックミラー16を透過した第2高調波光(すなわ
ち、β−BBO結晶15で第4高調波光に変換されなか
った第2高調波光)を吸収するためのダンパー17と、
第1のダイクロイックミラー16で全反射された第4高
調波光が入射される、波長532nmの第2高調波光を
透過するとともに波長266nmの第4高調波光を全反
射するようにコーティングされた第2のダイクロイック
ミラー18と、第2のダイクロイックミラー18を透過
してくる第2高調波光を遮断するカットフィルタ19
と、カットフィルタ19の出射側に設けられた、第4高
調波光を減衰させるアッテネータ20と、アッテネータ
20の出射側に設けられた、波長266nm用フォトダ
イオードを用いた内部パワーモニター21と、ポッケル
スセル13に印加電圧VS を印加するためのドライバー
22(高電圧発生回路)と、ドライバー22からポッケ
ルスセル13への印加電圧VS の出力をオン/オフさせ
るためのフォトカプラー23および外部制御機器24と
を備えている。
The external harmonic generating laser oscillator 10 is provided with an internal resonator type second harmonic optical oscillator 11 which emits second harmonic light having a wavelength of 532 nm and a second harmonic light which is emitted from the second harmonic optical oscillator 11. Λ / with incident rotation mechanism
2 plate 12 and the 2nd which penetrated λ / 2 plate 12 with a rotation mechanism
The Pockels cell 13 into which the harmonic light is incident, the condenser lens 14 into which the second harmonic light transmitted through the Pockels cell 13 is incident, and the second harmonic light condensed by the condenser lens 14 is converted into the fourth harmonic light. Β-BBO crystal 15 for conversion
And a wavelength of 5 provided on the emission side of the β-BBO crystal 15.
It transmits the second harmonic light of 32 nm and has a wavelength of 266.
The first dichroic mirror 16 coated to totally reflect the fourth harmonic light of nm, and the second harmonic light transmitted through the first dichroic mirror 16 (that is, the β-BBO crystal 15 converts the fourth harmonic light into the fourth harmonic light). A damper 17 for absorbing the unconverted second harmonic light),
The fourth harmonic light totally reflected by the first dichroic mirror 16 is incident, the second harmonic light having a wavelength of 532 nm is transmitted, and the second harmonic light having a wavelength of 266 nm is coated so as to be totally reflected. The dichroic mirror 18 and a cut filter 19 that blocks the second harmonic light transmitted through the second dichroic mirror 18.
And an attenuator 20 provided on the emission side of the cut filter 19 for attenuating the fourth harmonic light, an internal power monitor 21 provided on the emission side of the attenuator 20 using a photodiode for a wavelength of 266 nm, and a Pockels cell. A driver 22 (high-voltage generation circuit) for applying an applied voltage V S to the driver 13, a photocoupler 23 for turning on / off the output of the applied voltage V S from the driver 22 to the Pockels cell 13, and an external control device 24. It has and.

【0019】一般に、直線偏光のレーザ光を周波数逓倍
用の非線形光学結晶に入射させる場合には、λ/2板
(1/2波長板)を非線形光学結晶の入射側に設けて、
λ/2板の結晶軸に対してθ°回転させた直線偏光を入
射させることにより、λ/2板を通ったレーザ光の偏光
を2θ°回転させることができるため、λ/2板を手動
的に回転させて高調波の強度を調整することができる。
しかしながら、このようにλ/2板を手動的に回転させ
る方法では、レーザ光を高速にオン/オフしたりレーザ
光に変調をかけたりすることはできない。
Generally, when a linearly polarized laser beam is incident on a nonlinear optical crystal for frequency multiplication, a λ / 2 plate (1/2 wavelength plate) is provided on the incident side of the nonlinear optical crystal.
By inputting linearly polarized light that is rotated by θ ° with respect to the crystal axis of the λ / 2 plate, it is possible to rotate the polarized light of the laser light that has passed through the λ / 2 plate by 2θ °. The intensity of the higher harmonics can be adjusted by rotating the target.
However, the method of manually rotating the λ / 2 plate in this way cannot turn on / off the laser light at high speed or modulate the laser light.

【0020】そこで、外部高調波発生レーザ発振器10
では、高速に偏光面を回転させることができる電気光学
素子であるポッケルスセル13を回転機構付きλ/2板
12とβ−BBO結晶15(非線形光学結晶)との間に
配置する。いま、ポッケルスセル13における位相差α
とドライバ22からポッケルスセル13への印加電圧V
S (変調信号)との関係は、 α=K・VS (1) ここで、Kは定数 で表わされるため、印加電圧VS を連続的に変化させる
ことにより位相差αを連続的に変化させることができ
る。
Therefore, the external harmonic generating laser oscillator 10
Then, the Pockels cell 13, which is an electro-optical element capable of rotating the plane of polarization at high speed, is arranged between the λ / 2 plate 12 with the rotation mechanism and the β-BBO crystal 15 (nonlinear optical crystal). Now, the phase difference α in the Pockels cell 13
And the voltage V applied from the driver 22 to the Pockels cell 13
The relationship with S (modulation signal) is α = K · V S (1) Here, K is represented by a constant, and therefore the phase difference α is continuously changed by continuously changing the applied voltage V S. Can be made.

【0021】したがって、位相差αがちょうど半波長分
となる半波長電圧値va に印加電圧VS の電圧値を設定
することにより、集光レンズ14を介してβ−BBO結
晶15に入射する第2高調波光の偏光方向を90°だけ
回転させることができるので、β−BBO結晶15にお
ける第2高調波光から第4高調波光への変換効率を約0
%または約100%に制御することができる。また、印
加電圧VS の電圧値を半波長電圧値va よりも小さくす
ると、ポッケルスセル13を透過した第2高調波光は楕
円偏光に変換される。この楕円偏光をβ−BBO結晶1
5に入射させた場合は、楕円偏光を分解した偏光(電
界)成分のうちの一方の高調波発生に寄与する成分に見
合う大きさの変換光強度が得られるため、印加電圧VS
を制御して楕円偏光の互いに直交する電界成分の位相を
連続的に変えることによって、β−BBO結晶15にお
いて変換される第4高調波光の強度を0%〜100%の
間で自由にコントロールすることもできる。なお、ポッ
ケルスセル13の応答時間は、ナノ秒(10-9秒)オー
ダかあるいはそれ以下であるため、レーザ加工機の光源
として問題ない高速スイッチングが可能となる。
Therefore, by setting the voltage value of the applied voltage V S to the half-wave voltage value v a at which the phase difference α is exactly one half wavelength, the light enters the β-BBO crystal 15 via the condenser lens 14. Since the polarization direction of the second harmonic light can be rotated by 90 °, the conversion efficiency from the second harmonic light to the fourth harmonic light in the β-BBO crystal 15 is about 0.
% Or about 100%. When the voltage value of the applied voltage V S is made smaller than the half-wave voltage value v a , the second harmonic light transmitted through the Pockels cell 13 is converted into elliptically polarized light. This elliptically polarized light is converted into β-BBO crystal 1
If is incident to 5, since one size conversion light intensity commensurate with the component that contributes to harmonic generation of the polarization (electric field) component decomposed elliptically polarized light is obtained, the applied voltage V S
By continuously changing the phase of the electric field components of the elliptically polarized light which are orthogonal to each other, the intensity of the fourth harmonic light converted in the β-BBO crystal 15 is freely controlled between 0% and 100%. You can also Since the response time of the Pockels cell 13 is on the order of nanoseconds (10 −9 seconds) or less, high-speed switching can be performed without any problem as a light source of a laser processing machine.

【0022】β−BBO結晶15は一般に「Type
1」と呼ばれているものであり、角度マッチングまたは
温度マッチングにより位相整合がとれるようにカットさ
れている。この位相整合を完全にするためには、β−B
BO結晶15へ入射させる第2高調波光の偏光方向をβ
−BBO結晶15の光学軸に対して所定の角度に一意的
に合わせることが必要である。しかし、β−BBO結晶
15へ入射してくる第2高調波光の偏光方向は、第2高
調波光発振器11を構成する偏光板およびブルュースタ
ー板(ともに不図示)などによって規定されているた
め、第2高調波光の偏光方向を自由に回転させることは
困難である。したがって、β−BBO結晶15自体を回
転させて微調することが必要となるが、β−BBO結晶
15は角度調整機構や結晶の恒温化ユニットが取り付け
られているため、この部分に微調回転機構を設けること
は困難である。そこで、外部高調波発生レーザ発振器1
0では、ポッケルスセル13にドライバ22から印加電
圧VS をかけない状態で、または、印加電圧VS の電圧
値を半波長電圧値va とした状態で、第4高調波光の出
力が最大または最小となるように、内部パワーモニター
21を見ながら回転機構付きλ/2板12を回転させて
調整する。
The β-BBO crystal 15 is generally called "Type".
It is called "1" and is cut so that phase matching can be achieved by angle matching or temperature matching. To complete this phase matching, β-B
The polarization direction of the second harmonic light incident on the BO crystal 15 is β
-It is necessary to uniquely adjust to a predetermined angle with respect to the optical axis of the BBO crystal 15. However, since the polarization direction of the second harmonic light incident on the β-BBO crystal 15 is defined by the polarizing plate and the Brewster plate (both not shown) that constitute the second harmonic light oscillator 11, It is difficult to freely rotate the polarization direction of harmonic light. Therefore, it is necessary to rotate the β-BBO crystal 15 itself to make fine adjustment. However, since the β-BBO crystal 15 has an angle adjusting mechanism and a crystal thermostat unit attached, a fine adjustment rotating mechanism is attached to this portion. It is difficult to provide. Therefore, the external harmonic generation laser oscillator 1
At 0, the output of the fourth harmonic light is maximum or in a state where the applied voltage V S is not applied to the Pockels cell 13 from the driver 22 or the voltage value of the applied voltage V S is a half wavelength voltage value v a. The λ / 2 plate 12 with a rotating mechanism is rotated and adjusted while looking at the internal power monitor 21 so as to minimize the adjustment.

【0023】図2は、本発明の外部高調波発生レーザ発
振器の第2の実施例を示す概略構成図である。
FIG. 2 is a schematic configuration diagram showing a second embodiment of the external harmonic generating laser oscillator according to the present invention.

【0024】外部高調波発生レーザ発振器50は、CW
−QスイッチNd:YAGレーザの第2高調波光(波長
532nm)をβ−BBO結晶55に入射させて第4高
調波光(波長266nm)を発生させるためのものであ
るとともに、ファラデーセル53を用いた第2高調波光
の偏光度制御によって第4高調波光のスイッチングを行
うものである。
The external harmonic generating laser oscillator 50 is a CW
The Faraday cell 53 was used for making the second harmonic light (wavelength 532 nm) of the -Q switch Nd: YAG laser incident on the β-BBO crystal 55 to generate the fourth harmonic light (wavelength 266 nm). The fourth harmonic light is switched by controlling the polarization degree of the second harmonic light.

【0025】外部高調波発生レーザ発振器50は、以下
に示す点で、図1に示した第1の実施例の外部高調波発
生レーザ発振器10と異なる。 (1)回転機構付きλ/2板52と集光レンズ54との
間に、図1に示したポッケルスセル13の代わりに、印
加磁界Hに応じて偏光面を回転させることができる磁気
光学素子であるファラデーセル53を含む。 (2)ドライバー62は、ファラデーセル53に電流I
を供給して、ファラデーセル53に印加磁界Hを印加す
るためのものである。
The external harmonic wave generating laser oscillator 50 differs from the external harmonic wave generating laser oscillator 10 of the first embodiment shown in FIG. 1 in the following points. (1) Instead of the Pockels cell 13 shown in FIG. 1 between the λ / 2 plate 52 with a rotating mechanism and the condenser lens 54, a magneto-optical element capable of rotating the polarization plane according to the applied magnetic field H. Faraday cell 53 is included. (2) The driver 62 causes the Faraday cell 53 to receive the current I.
To apply the applied magnetic field H to the Faraday cell 53.

【0026】ファラデーセル53における偏光面の回転
角β(ファラデー回転角)は、ファラデーセル53の長
さLおよび印加磁界Hに対して、 β=KV ・L・H (2) ここで、KV はベルデ定数 で与えられる。したがって、印加磁界Hは電流Iによっ
て自由に制御できるので、電流Iを変化させることによ
り、回転角βを0°〜90°の間で変化させることがで
きる。その結果、ポッケルスセル13を用いた場合と同
様にして、高速スイッチングが可能となる。
The rotation angle β (Faraday rotation angle) of the plane of polarization in the Faraday cell 53 is β = K V · L · H (2) where K is the relationship with the length L of the Faraday cell 53 and the applied magnetic field H. V is given by the Verdet constant. Therefore, since the applied magnetic field H can be freely controlled by the current I, the rotation angle β can be changed between 0 ° and 90 ° by changing the current I. As a result, high-speed switching is possible in the same manner as when the Pockels cell 13 is used.

【0027】以上の説明では、第2高調波光を第4高調
波光に変換したが、本発明の外部高調波発生レーザ発振
器はこれに限らず、たとえば基本波レーザ光を任意の高
調波光に変換する場合にも有効である。
In the above description, the second harmonic light is converted into the fourth harmonic light, but the external harmonic generating laser oscillator of the present invention is not limited to this, and for example, the fundamental laser light is converted into arbitrary harmonic light. It is also effective in cases.

【0028】[0028]

【発明の効果】本発明は、上述のとおり構成されている
ので、次の効果を奏する。
Since the present invention is configured as described above, it has the following effects.

【0029】印加電圧に応じて偏光面を回転させること
ができる電気光学素子または印加磁界に応じて偏光面を
回転させることができる磁気光学素子を含むことによ
り、高速スイッチングが可能となるため、高出力な外部
高調波発生レーザ発振器におけるレーザのオン/オフ特
性(立ち上がり時間応答性)を秒オーダまたは分オーダ
からナノ秒オーダに改善することができる。その結果、
たとえば、Nd:YAGレーザのCW−Qスイッチパル
スレーザの第4高調波光(波長266nm)を用いて、
Qスイッチパルス1ショット単位でドットを制御するレ
ーザマーキングする装置の光源にも、本発明の外部高調
波発生レーザ発振器を適用することができる。また、レ
ーザビームの高速スイッチングの必要なレーザトリミン
グ装置やレーザスクライバー装置などにも、本発明の外
部高調波発生レーザ発振器を使用することができる。さ
らに、高速スイッチングが必要な用途のみでなく、高調
波光のオン/オフの頻度がランダムになったりまたは途
中で変わるときでも、安定度を大きく改善させることが
できる。
By including an electro-optical element capable of rotating the plane of polarization in accordance with an applied voltage or a magneto-optical element capable of rotating the plane of polarization in response to an applied magnetic field, high-speed switching is possible, and thus high It is possible to improve the on / off characteristics (rise time response) of a laser in an output external harmonic generation laser oscillator from the order of seconds or minutes to the order of nanoseconds. as a result,
For example, using the fourth harmonic light (wavelength 266 nm) of the CW-Q switch pulse laser of the Nd: YAG laser,
The external harmonic generating laser oscillator of the present invention can also be applied to a light source of a laser marking device that controls dots in units of one shot of a Q switch pulse. Further, the external harmonic generating laser oscillator of the present invention can also be used for a laser trimming device, a laser scriber device and the like which require high-speed switching of a laser beam. Further, not only in applications requiring high-speed switching, the stability can be greatly improved even when the frequency of ON / OFF of harmonic light becomes random or changes in the middle.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の外部高調波発生レーザ発振器の第1の
実施例を示す概略構成図である。
FIG. 1 is a schematic configuration diagram showing a first embodiment of an external harmonic generation laser oscillator of the present invention.

【図2】本発明の外部高調波発生レーザ発振器の第2の
実施例を示す概略構成図である。
FIG. 2 is a schematic configuration diagram showing a second embodiment of the external harmonic generation laser oscillator of the present invention.

【図3】従来の外部高調波発生レーザ発振器において、
非線形光学結晶としてβ−BBO結晶を用い、Nd:Y
AGの第2高調波光(波長532nm)をβ−BBO結
晶に入射して第4高調波光(波長266nm)に変換す
るときの変換効率と結晶温度との関係を求めた一シュミ
レーション結果を示すグラフである。
FIG. 3 shows a conventional external harmonic generation laser oscillator,
A β-BBO crystal is used as the nonlinear optical crystal, and Nd: Y
In the graph which shows one simulation result which calculated | required the relationship between the conversion efficiency at the time of making the 2nd harmonic light (wavelength 532nm) of AG enter into (beta) -BBO crystal, and converting into 4th harmonic light (wavelength 266nm). is there.

【符号の説明】[Explanation of symbols]

10,50 外部高調波発生レーザ発振器 11,51 第2高調波光発振器 12,52 λ/2板 13 ポッケルスセル 14,54 集光レンズ 15,55 β−BBO結晶 16,56 第1のダイクロイックミラー 17,57 ダンパー 18,58 第2のダイクロイックミラー 19,59 カットフィルタ 20,60 アッテネータ 21,61 内部パワーモニター 22,62 ドライバー 23,63 フォトカプラー 24,64 外部制御機器 63 ファラデーセル 10,50 External harmonic generation laser oscillator 11,51 Second harmonic optical oscillator 12,52 λ / 2 plate 13 Pockels cell 14,54 Condensing lens 15,55 β-BBO crystal 16,56 First dichroic mirror 17, 57 Damper 18,58 Second dichroic mirror 19,59 Cut filter 20,60 Attenuator 21,61 Internal power monitor 22,62 Driver 23,63 Photocoupler 24,64 External control device 63 Faraday cell

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 所定の偏光方向を有する基本波レーザ光
または高調波レーザ光を出射するレーザ発振器と、該レ
ーザ発振器から出射された前記基本波レーザ光または前
記高調波レーザ光が入射される1/2波長板と、該1/
2波長板を透過した前記基本波レーザ光または前記高調
波レーザ光を他の高調波レーザ光に変換する非線形光学
結晶とを含む外部高調波発生レーザ発振器において、 前記1/2波長板と前記非線形光学結晶との間に設けら
れた、印加電圧に応じて前記基本波レーザ光または前記
高調波レーザ光の偏光面を回転させることができる電気
光学素子を含むことを特徴とする外部高調波発生レーザ
発振器。
1. A laser oscillator which emits a fundamental wave laser beam or a harmonic wave laser beam having a predetermined polarization direction, and the fundamental wave laser beam or the harmonic wave laser beam emitted from the laser oscillator is incident 1 1/2 wave plate and the 1 /
An external harmonic generating laser oscillator including a nonlinear optical crystal that converts the fundamental laser light or the harmonic laser light that has passed through a two-wave plate into another harmonic laser light, wherein the half-wave plate and the nonlinear An external harmonic generating laser including an electro-optical element that is provided between the optical crystal and can rotate a polarization plane of the fundamental laser light or the harmonic laser light according to an applied voltage. Oscillator.
【請求項2】 前記印加電圧の電圧値を制御する印加電
圧制御手段をさらに含むことを特徴とする請求項1記載
の外部高調波発生レーザ発振器。
2. The external harmonic wave generating laser oscillator according to claim 1, further comprising applied voltage control means for controlling a voltage value of the applied voltage.
【請求項3】 前記電気光学素子がポッケルスセルであ
ることを特徴とする請求項1または請求項2記載の外部
高調波発生レーザ発振器。
3. The external harmonic generating laser oscillator according to claim 1, wherein the electro-optical element is a Pockels cell.
【請求項4】 所定の偏光方向を有する基本波レーザ光
または高調波レーザ光を出射するレーザ発振器と、該レ
ーザ発振器から出射された前記基本波レーザ光または前
記高調波レーザ光が入射される1/2波長板と、該1/
2波長板を透過した前記基本波レーザ光または前記高調
波レーザ光を他の高調波レーザ光に変換する非線形光学
結晶とを含む外部高調波発生レーザ発振器において、 前記1/2波長板と前記非線形光学結晶との間に設けら
れた、印加磁界に応じて前記基本波レーザ光または前記
高調波レーザ光の偏光面を回転させることができる磁気
光学素子を含むことを特徴とする外部高調波発生レーザ
発振器。
4. A laser oscillator which emits a fundamental wave laser beam or a harmonic wave laser beam having a predetermined polarization direction, and the fundamental wave laser beam or the harmonic wave laser beam emitted from the laser oscillator is incident 1 1/2 wave plate and the 1 /
An external harmonic generating laser oscillator including a nonlinear optical crystal that converts the fundamental laser light or the harmonic laser light that has passed through a two-wave plate into another harmonic laser light, wherein the half-wave plate and the nonlinear An external harmonic generation laser including a magneto-optical element that is provided between the optical crystal and can rotate the polarization plane of the fundamental laser light or the harmonic laser light according to an applied magnetic field. Oscillator.
【請求項5】 前記印加磁界の値を制御する印加磁界制
御手段をさらに含むことを特徴とする請求項4記載の外
部高調波発生レーザ発振器。
5. The external harmonic wave generating laser oscillator according to claim 4, further comprising an applied magnetic field control means for controlling the value of the applied magnetic field.
【請求項6】 前記磁気光学素子がファラデーセルであ
ることを特徴とする請求項4または請求項5記載の外部
高調波発生レーザ発振器。
6. The external harmonic generation laser oscillator according to claim 4, wherein the magneto-optical element is a Faraday cell.
JP5284709A 1993-11-15 1993-11-15 External harmonic generation laser oscillator Expired - Lifetime JP2727935B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5284709A JP2727935B2 (en) 1993-11-15 1993-11-15 External harmonic generation laser oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5284709A JP2727935B2 (en) 1993-11-15 1993-11-15 External harmonic generation laser oscillator

Publications (2)

Publication Number Publication Date
JPH07142802A true JPH07142802A (en) 1995-06-02
JP2727935B2 JP2727935B2 (en) 1998-03-18

Family

ID=17681970

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5284709A Expired - Lifetime JP2727935B2 (en) 1993-11-15 1993-11-15 External harmonic generation laser oscillator

Country Status (1)

Country Link
JP (1) JP2727935B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100356209C (en) * 2005-05-20 2007-12-19 福州福特科光电有限公司 Dark ultraviolet visible near infrared polarizer
JP2011043548A (en) * 2009-08-19 2011-03-03 Lasertec Corp Light source device
JP2011215540A (en) * 2010-04-02 2011-10-27 Mitsubishi Electric Corp Wavelength conversion device and wavelength conversion laser device using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04125526A (en) * 1990-09-18 1992-04-27 Toshiba Corp Higher harmonic generation device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04125526A (en) * 1990-09-18 1992-04-27 Toshiba Corp Higher harmonic generation device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100356209C (en) * 2005-05-20 2007-12-19 福州福特科光电有限公司 Dark ultraviolet visible near infrared polarizer
JP2011043548A (en) * 2009-08-19 2011-03-03 Lasertec Corp Light source device
JP2011215540A (en) * 2010-04-02 2011-10-27 Mitsubishi Electric Corp Wavelength conversion device and wavelength conversion laser device using the same

Also Published As

Publication number Publication date
JP2727935B2 (en) 1998-03-18

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