JPH07142309A - Method for exposing wafer - Google Patents

Abstract

PURPOSE:To improve the throughput in a probe inspecting step and a visual inspection step by excluding a chip, which is formed in the vicinity of the edge of a wafer under the state wherein the corners are broken. CONSTITUTION:A stepper 1 is used, and a product pattern 32 of a reticle 3 is transferred on a wafer 3. Thereafter, of product image patterns 42 formed on the wafer 91, a product image pattern 42d under the state, wherein a part generated in the vicinity of the edge of the wafer 91 is broken, undergoes double exposures. For example, an opening part 23 of a reticle blind 2 is set at the size of one chip at a position deviated with respect to the product pattern 32. Then, an intended product pattern 42d undergoes double exposures. The double exposures can be performed after the reticle 3 is removed. Or the double exposures are performed by using a double-exposure reticle wherein an opening pattern is formed. Furthermore, the double exposures are performed with an unmagnified projection exposure device by using a mask wherein an opening part is provided at an intended position.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of exposing a wafer in a photosensitive step of a semiconductor device manufacturing process.

[0002]

2. Description of the Related Art A conventional reticle 110 as shown in FIG. 8A is used for exposure by a reduction projection exposure apparatus in a conventional exposure process.
To use. The reticle 110 includes a transparent substrate 11
1 on the multi-chip product pattern 112 (112a,
112b, 112c, 112d) are formed.

Then, as shown in FIG. 8B, a reticle (11) is formed by a reduction projection exposure apparatus (not shown).
When the product pattern (112) is transferred to the wafer 120 by using (0), the product pattern image 122d (the hatched area) formed near the edge of the wafer 120 is exposed with the corners missing.

As described above, in some cases, the chip having the product pattern image 122d cannot be determined as a good product or a defective product in the probe inspection process. Therefore, the appearance inspection process is added to remove the chip as a defective product.

[0005]

However, as described above, since the probe inspection process and the appearance inspection process are performed to remove the chip with the lacked corners, the inspection is doubled. The throughput of the inspection process is reduced.

An object of the present invention is to provide a wafer exposure method which is excellent in increasing the throughput of the inspection process.

[0007]

The present invention is a wafer exposure method made to achieve the above object. That is, in the exposure step of transferring the product pattern formed on the reticle to the wafer using the reduction projection exposure apparatus, after transferring the product pattern of the reticle onto the wafer, the product pattern image formed by transferring the product pattern Double exposure is performed on a product pattern image that is partially missing near the edge of the wafer.

For example, after transferring the product pattern of the reticle to the wafer, the opening formed by the reticle blind of the reduction projection exposure apparatus is set at a position displaced from the product pattern of the reticle, and then the product pattern is formed. Of the product pattern image formed by transferring the image data, the product pattern image in which a part of the product pattern image near the edge of the wafer is missing is double exposed.

Alternatively, after transferring the product pattern of the reticle onto the wafer, the reticle is removed from the reduction projection exposure apparatus, the opening of the reticle blind of the reduction projection exposure apparatus is set to a predetermined size, and then the product Of the product pattern image formed by transferring the pattern, the product pattern image in a state in which a part generated near the edge of the wafer is missing is double exposed.

Alternatively, after transferring the product pattern of the reticle onto the wafer, the reticle installed in the reduction projection exposure apparatus is removed, and the reticle for double exposure having an opening pattern of a predetermined size is installed. Of the product pattern image formed by transferring the product pattern, the product pattern image in a state in which a part generated near the edge of the wafer is missing is double exposed.

Alternatively, a reticle on which a product pattern and an opening pattern for double exposure are formed is installed in a reduction projection exposure apparatus, and subsequently, the product pattern is transferred onto a wafer by using the product pattern of the reticle, Of the product pattern image formed by transferring the product pattern, a product pattern image in a state where a part of the product pattern near the edge of the wafer is missing is double exposed using the opening pattern of the reticle.

Further, after the product pattern of the reticle is transferred to the wafer, a mask having an opening is provided at a position corresponding to a region of the transferred product pattern in a state where a part of the product near the edge of the wafer is missing. Then, the same-magnification projection exposure apparatus double-exposes the product pattern image formed by transferring the product pattern, in which a part of the product pattern image near the edge of the wafer is missing.

Among the plurality of exposure steps in the semiconductor device manufacturing process, the above-mentioned exposure method includes an exposure step of forming an ion implantation mask and an exposure mask forming an etching mask used for forming an opening pattern in a passivation film on a pad. It is applied to at least one exposure process except a specific exposure process such as a process.

[0014]

In the above wafer exposure method, the product pattern image formed by transferring the product pattern is double exposed by partially exposing the product pattern image in the vicinity of the edge of the wafer in which a part of the product pattern image is missing. , At least a normal pattern is not formed. Therefore, in the probe inspection step, a product having a product pattern partially lacking can be removed as a defective product. Therefore, it is not necessary to perform a visual inspection.

For example, in the product pattern image formed by transferring the product pattern by setting the opening formed by the reticle blind of the reduction projection exposure apparatus at a position displaced from the product pattern of the reticle, By double-exposureing the product pattern image in which a part near the edge of the wafer is cut off, the pattern transferred to that area is double transferred in a state where the normal pattern is shifted, Does not become a pattern.

Alternatively, after transferring the product pattern of the reticle onto the wafer, the reticle is removed from the reduction projection exposure apparatus, the opening of the reticle blind of the reduction projection exposure apparatus is set to a predetermined size, and the product pattern is transferred. By double-exposing the product pattern image formed in the vicinity of the edge of the wafer in the product pattern image formed by double exposure, no pattern is formed in that region. Further, since the exposure light is applied to the entire surface of the double exposure area, the double exposure is surely performed.

Alternatively, after transferring the product pattern of the reticle onto the wafer, the reticle installed in the reduction projection exposure apparatus is removed, and a double exposure reticle having an opening pattern of a predetermined size is installed, and then the product In the product pattern image formed by transferring the pattern, the product pattern image in the vicinity of the edge of the wafer, in which a part is missing, is double-exposed, so that no pattern is formed in that region. Further, although it takes a lot of time to replace the reticle with the double exposure reticle, since the exposure light is applied to the entire surface of the double exposure region, the double exposure is surely performed.

Alternatively, a reticle having a product pattern and an opening pattern for double exposure is installed in a reduction projection exposure apparatus, and the product pattern is transferred onto a wafer using the product pattern of the reticle, and then the product pattern is transferred. Of the product pattern image formed by transfer, a product pattern image in which a part generated near the edge of the wafer is missing,
By performing double exposure using the opening pattern of the reticle, no pattern is formed in that region. Furthermore, since the reticle is not replaced, it does not take time to replace the reticle. Moreover, since the exposure light is applied to the entire surface of the double exposure area, the double exposure is surely performed.

Further, after the product pattern of the reticle is transferred onto the wafer, a mask is used in which an opening is provided at a position corresponding to a region of the transferred product pattern in a state where a part of the product near the edge of the wafer is missing. Then, the product pattern image formed by transferring the product pattern by the same-magnification projection exposure device is double-exposed to the product pattern image in which a part of the product pattern image near the edge of the wafer is missing Pattern is not formed. further,
Since double exposure is performed by the same-magnification projection exposure apparatus, the throughput of the reduction projection exposure apparatus is the same as when double exposure is not performed.

In each of the above-mentioned exposure methods, among the plurality of exposure steps in the semiconductor device manufacturing process, an exposure step for forming an ion implantation mask and an etching mask used for forming an opening pattern in the passivation film on the pad are formed. By applying it to at least one exposure process other than the exposure process to be performed, a product with a part missing near the edge of the wafer becomes an electrical defect such as a conduction defect or a short circuit. Can be removed.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described with reference to the wafer exposure explanatory diagram of FIG. As shown in (1) of FIG.
The reduction projection exposure apparatus 1 includes an illumination system 11 and this illumination system 11
A reduction projection unit 13 that collects the oscillated light beam 12 and irradiates it on the wafer 91, and a stage 14 on which the wafer 91 is placed and movable at the position where the light beam 12 collected by the reduction projection unit 13 is collected. , And the reticle blind 2 provided in the optical path between the illumination system 11 and the reduction projection unit 13.
Then, the reticle 3 is installed in the optical path between the reticle blind 2 and the reduction projection unit 13.

The reticle blind 2 is, for example, substantially L
It is constituted by a combination of V-shaped light-shielding plates 21 and 22. The light-shielding plate 21 is moved in the arrow A or A direction, and the light-shielding plate 22 is appropriately moved in the arrow C or E direction so that the size of the opening 23 is increased. And position. The reticle 3 includes a transparent substrate 31 and product patterns 32 (32a to 32d) formed on the surface of the substrate 31.

First, in the first step, the reduction projection exposure apparatus 1 is used to transfer the product pattern 32 formed on the reticle 3 onto the wafer 91. Although not shown, a photosensitive film (for example, a resist film) is formed on the wafer 91.
Further, the opening 23 of the reticle blind 2 when transferring
Is opened to a size corresponding to the size of the product pattern 32.

As a result, as shown in (2) of FIG. 1, the product pattern (32) is transferred onto the wafer 91 to form product pattern images 42 (42a to 42d). At this time, the product pattern image 42d in the vicinity of the edge of the wafer 91 is transferred with a part thereof missing.

Next, as shown in (3) of FIG. 1, in a second step, for example, the openings 23 formed by the reticle blind 2 are formed into a plurality of product patterns 32 of the reticle 3.
Set to the position corresponding to the state of overlapping with. At that time, the size of the opening 23 corresponds to the size of one chip.

Then, as shown in (4) of FIG. 1, in a third step, the stage (14) is driven to perform double exposure on the exposure position of the reduction projection exposure apparatus (1) for double exposure.
Of the product pattern image 42d (portion indicated by diagonal lines) that is transferred in a state where a part of the area is aligned.
Area is double exposed. As a result, the product pattern image 42
Since the double exposure is performed in the area of d with the normal pattern being shifted, the normal pattern is not formed as a result. Even if a pattern is formed, the pattern does not have a normal shape.

In the above-mentioned exposure method, since a region of the product pattern image 42d, which is transferred in a state where a part thereof is cut off, is double-exposed, a normal pattern is not formed in that region, so that a normal product cannot be obtained. As a result, since the product is detected as a defective product in the probe inspection process, it is not necessary to perform a visual inspection. Therefore, the inspection time is shortened.

In the above-mentioned exposure method, the reticle blind 2 is operated to double-expose the position of the product pattern image 42d, so that the operability is good.

In the first embodiment described above, the size of the opening portion 23 of the reticle blind 2 is set to one chip size. However, as shown in FIG. Product pattern images 42b, 42 transferred by
When d is formed vertically, the opening 23 of the reticle blind 2 (the area indicated by the chain double-dashed line) is set in correspondence with the size of two chips of the product pattern images 42b and 42d, After that, the product pattern images 42b and 42d may be simultaneously double-exposed.

Further, as shown in (2) of FIG. 2, product pattern images 42a, 4 which are transferred in a state in which a part is missing
When 2b are formed side by side, the opening portion 23 of the reticle blind 2 (the area indicated by the chain double-dashed line) is set in correspondence with the size of two chips of the product pattern images 42a and 42b, After that, the product pattern images 42a, 42b
May be simultaneously double exposed.

Next, a second embodiment will be described with reference to the wafer exposure explanatory diagram of FIG. In the first step, (1) in FIG.
1, the product pattern (32) of the reticle (3) is transferred to the wafer 91 in the same manner as described above with reference to (1) and (2) of FIG. 1 to form the product pattern image 42. The detailed description of the reduction projection exposure apparatus (1), the reticle blind (2), the reticle (3), etc. is the same as the description given with reference to FIG.

Then, as shown in FIG. 3B, the second step is performed. In this step, the reticle (3) is removed from the reduction projection exposure apparatus (1) and the opening 23 of the reticle blind 2 of the reduction projection exposure apparatus (1) is set to a predetermined size. For example, the size corresponding to the product pattern image (42d) is set.

Then, as shown in (3) of FIG. 3, in the third step, the stage (14) of the reduction projection exposure apparatus (1) is driven to align the wafer 91 with the exposure position, and the product pattern is obtained. The image 42d (the hatched portion) is double exposed.
As a result, the entire area of the product pattern image 42d is exposed, and no pattern is formed in this area.

In the above-mentioned exposure method, since the area of the product pattern image 42d transferred in a state where a part thereof is cut off is double-exposed, a pattern is not formed in that area, so that a normal product cannot be obtained. As a result, in the probe inspection process, it is not necessary to perform the probe inspection of the area.
Moreover, it is not necessary to perform a visual inspection. Therefore, the inspection time is shortened.

Further, in the above-mentioned exposure method, although it takes a lot of time to remove the reticle 3, a light beam (1
Since 2) is irradiated, double exposure is surely performed. Further, by operating the reticle blind 2, the product pattern image 42
Operability is good because double exposure is required at the position of d.

Also in the second embodiment, the opening 23 of the reticle blind 2 is set corresponding to the size of two chips of the product pattern image 42, as described in FIG.
After that, two chips of the product pattern image 42 may be simultaneously double exposed.

Next, a third embodiment will be described with reference to FIG. In the first step, (1) in FIG.
1, the product pattern (32) of the reticle (3) is transferred to the wafer 91 in the same manner as described above with reference to (1) and (2) of FIG. 1 to form the product pattern image 42. The detailed description of the reduction projection exposure apparatus (1), the reticle blind (2), the reticle (3), etc. is the same as the description given with reference to FIG.

Then, as shown in FIG. 4B, the second step is performed. In this step, the reticle (3) is removed from the reduction projection exposure apparatus (1), and then the double exposure reticle 5 is installed in the reduction projection exposure apparatus (1). The double-exposure reticle 5 includes, for example, a light-transmissive substrate 51, a light-shielding film 52 (a hatched region) formed on the upper surface thereof, and a light-shielding film 52.
The opening pattern 53 is formed in a size of 1 chip, for example.

Thereafter, as shown in (3) of FIG. 4, in a third step, the stage (14) of the reduction projection exposure apparatus (1) is driven to align the wafer (91) with the exposure position,
The product pattern image 42d (the hatched portion) is double exposed. As a result, the entire area of the product pattern image 42d is exposed, and no pattern is formed in this area.

In the above-mentioned exposure method, since the area of the product pattern image 42d transferred in a state where a part thereof is cut off is double-exposed, a pattern is not formed in that area, so that a normal product cannot be obtained. As a result, there is no need to probe the area in the probe inspection step. Moreover, it is not necessary to perform a visual inspection. Therefore, the inspection time is shortened.

Further, in the above-mentioned exposure method, it takes a lot of time to replace the reticle 3 with the double exposure reticle 5, but since the light beam (12) is applied to the entire area of the double exposure, the double exposure can be surely performed. , The pattern is not formed. Furthermore, it is not necessary to operate the reticle blind 2.

In the double exposure reticle 5 used in the above-described exposure method, the opening pattern 53 is formed in a size of one chip, but it is also possible to form it in a size of two chips or more.

For example, as shown in (1) of FIG. 5, when there is a product pattern image 42 (42b, 42c, 42d) which is transferred in a state where a part thereof is cut off at the edge portion of the wafer 91, For example, in the drawing, the opening pattern 53
Double exposure is performed by making the left side of the image corresponding to the product pattern images 42b and 42d. Then, as shown in (2) of FIG. 5, in the drawing, the upper side of the opening pattern 53 is the product pattern image 42.
Double exposure may be performed corresponding to c and 42d.

Alternatively, after the step shown in FIG. 5 (2) is performed first, the step shown in FIG. 5 (1) may be performed. Although not shown, or across the plurality of product pattern images, the opening pattern (53) of the mask (5)
Double exposure may be performed in correspondence with the above.

Next, a fourth embodiment will be described with reference to the wafer exposure explanatory diagram of FIG. As shown in (1) of FIG. 6, in the first step, the reticle 6 is installed in a reduction projection exposure apparatus (not shown). This reticle 6 has a transparent substrate 61.
Further, a product pattern 62 similar to the product pattern (32) and an opening pattern 63 for double exposure are formed. This opening pattern 63 is, for example, a product pattern 63.
Is formed in a size corresponding to one chip. Since the detailed description of the reduction projection exposure apparatus is the same as the description given with reference to FIG. 1, the description thereof is omitted here.

Subsequently, as shown in FIG. 6B, the reticle blind 2 of the reduction projection exposure apparatus (not shown) is operated so as to correspond to the product pattern 62 to open the opening 23.
Is set to a size corresponding to the product pattern 62. The detailed description of the reticle blind 2 is the same as the description given with reference to FIG. 1, and the description thereof is omitted here.

Then, as shown in (3) of FIG. 6, a reticle (6) is formed by a reduction projection exposure apparatus (not shown).
The product pattern (62) is transferred to the wafer 91 to form a product pattern image 42.

Then, as shown in FIG. 6D, the second step is performed. In this step, the opening 23 of the reticle blind 2 is set to a size corresponding to the opening pattern 63 of the reticle 6 and moved to a position corresponding to the opening pattern 63.

Thereafter, as shown in FIG. 6 (5), in a third step, the stage (not shown) of the reduction projection exposure apparatus is driven to move the wafer 91 to the exposure position of the reduction projection exposure apparatus.
The area to be double-exposed (the area of the product pattern image 42d in this case) is aligned, and the product pattern image 4
Double exposure is performed on 2d (hatched portion). As a result, the entire area of the product pattern image 42d is exposed, and no pattern is formed in this area.

In the above-mentioned exposure method, since the area of the product pattern image 42d transferred in a state where a part thereof is cut off is double-exposed, a pattern is not formed in that area, so that a normal product cannot be obtained. As a result, since the product is not formed in that region, it is not necessary to perform the probe inspection of the product in the probe inspection process. Also, no visual inspection is required. Therefore, the inspection time is shortened.

Further, in the above-mentioned exposure method, since the reticle 6 is not replaced, it does not take time to replace the reticle. In addition, since the light beam (12) is applied to the entire surface of the double exposure area, the double exposure can be surely performed, and no pattern is formed in the area. However, the number of product patterns that can be formed on the reticle 6 may decrease depending on the chip size.

Next, a fifth embodiment will be described with reference to the wafer exposure explanatory diagram of FIG. In the first step, (1) in FIG.
As shown in FIG. 1, the product pattern (32) of the reticle (3) is transferred to the wafer 91 in the same manner as described above with reference to (1) and (2) of FIG.
To form. The detailed description of the reduction projection exposure apparatus (1), the reticle blind (2), the reticle (3), etc. is the same as the description given with reference to FIG.

Next, the second step is performed. In this process,
Double exposure is performed using a mask 7 as shown in (2) of FIG. 7 by a unit-magnification projection exposure apparatus (not shown). The mask 7 includes a light-transmitting substrate 71 and a light-shielding film 72 formed on the substrate 71.
An opening 73 is provided at a position corresponding to the area 44 of the product pattern image.

Then, as shown in (3) of FIG. 7, a product transferred using the mask 7 in a state in which a portion generated near the edge of the wafer 91 is cut off by an equal-magnification projection exposure apparatus (not shown). The pattern image area 44 (hatched area) is double exposed. As a result, the area 44 (hatched area) of the product pattern image is entirely exposed and no pattern is formed in that area.

In the above-mentioned exposure method, since the area 44 of the product pattern image is double-exposed by the same-magnification projection exposure apparatus, a pattern is not formed in that area, so that a normal product cannot be obtained. As a result, since the product is not formed in that region, it is not necessary to perform the probe inspection of the product in the probe inspection process. Also, no visual inspection is required. Therefore, the inspection time is shortened.

Further, in the above-mentioned exposure method, since double exposure is performed by the unit-magnification projection exposure apparatus, the throughput of the reduction projection exposure apparatus becomes the same as the state in which double exposure is not performed. Further, since the area 44 of the product pattern image is entirely exposed, double exposure is surely performed.

Next, a case where one of the exposure methods described with reference to FIGS. 1 to 7 is applied to a semiconductor device manufacturing process will be described by taking a dynamic RAM manufacturing process as an example.

In order to apply the above-described exposure method, it is required that the probe inspection step be surely defective. Therefore, it is better to avoid applying the method to the exposure step of forming the ion implantation mask made of the resist used in the ion implantation step among the plurality of exposure steps in the dynamic RAM manufacturing process. The ion implantation process is
Since it may be performed in a self-aligned manner by using an element isolation region or the like, even if the above-mentioned exposure method is applied to the step of forming an ion implantation mask, a defect may not be detected by probe inspection in some cases. Further, even when the above exposure method is applied when forming an opening pattern in the passivation film on the pad,
It is not applicable as it is at least open on the pad.

Therefore, steps suitable for applying the above-mentioned exposure method include, for example, an element isolation region forming step, a gate electrode forming step, a contact hole forming step, a wiring step and the like.

A case where the above-mentioned exposure method is applied when forming an etching mask for forming an element isolation region using a positive resist by the LOCOS method will be described. For example, when the entire surface of the chip is exposed by double exposure, a LOCOS oxide film is formed on the entire surface of the chip. Therefore, a diffusion layer such as a source / drain region of a transistor should be formed on a semiconductor substrate. Can not be. Therefore, it is possible to remove the product as an electrically defective product by probe inspection.

When a negative type resist is used, the LOCOS oxide film is not formed because the resist remains on the entire surface of the chip. Therefore, a short circuit occurs between the elements,
The probe inspection allows the product to be removed as an electrically defective product.

Alternatively, a case where the above-described exposure method is applied when forming an etching mask for forming a gate electrode using, for example, a positive resist will be described. For example, when the entire surface of the chip is exposed by double exposure, the gate electrode cannot be formed on the chip because the etching mask is not formed. Therefore, it is possible to remove the product as an electrically defective product by probe inspection.

When a negative type resist is used, the resist remains on the entire surface of the chip. Therefore, even if the etching is performed, the film forming the gate electrode remains on the entire surface of the chip, so that a short circuit occurs between the elements. Therefore, it becomes possible to remove the product as an electrically defective product by probe inspection.

Further, a case where the above-mentioned exposure method is applied when forming an etching mask for forming a contact hole using a positive resist will be described. For example, when the entire surface of the chip is exposed by double exposure, since the etching mask is not formed, the insulating film formed on the chip in the etching step is removed. Therefore, when the wiring is formed in the wiring process, a short circuit occurs. Therefore, it becomes possible to remove the product as an electrically defective product by probe inspection.

When a negative resist is used, the resist remains on the entire surface of the chip. Therefore, even if the etching is performed, the contact hole cannot be formed, resulting in poor conduction. Therefore, it becomes possible to remove the product as an electrically defective product by probe inspection.

Alternatively, a case will be described in which the above-described exposure method is applied when forming an etching mask for forming a wiring (which may include a pad) using a positive resist. For example, when the entire surface of the chip is exposed by double exposure, the etching mask is not formed, and therefore wiring is provided on the chip (may include a pad).
Cannot be formed. Therefore, the probe inspection pad cannot be formed, and the probe inspection cannot be performed. Therefore, the product can be removed as an electrically defective product.

When a negative resist is used, the resist remains on the entire surface of the chip. Therefore, even if the etching is performed, a film for forming wirings (which may include pads) remains on the entire surface of the chip, so that a short circuit occurs between the elements.
Therefore, it becomes possible to remove the product as an electrically defective product by probe inspection.

Further, as described in the first embodiment, when the reticle blind on which the product pattern image is formed is shifted and the double exposure is performed, the reticle blind is surely generated so that an electrical defect may occur. Need to be shifted. The shift amount is appropriately determined according to each product.

[0069]

As described above, according to the present invention,
Of the product pattern image formed by transferring the product pattern, the product pattern image in a state where a part of the product pattern near the edge of the wafer is missing is double-exposed, so at least a normal pattern is present in the double-exposed area. Not formed.
Or no pattern is formed. Therefore, since it is detected as a defective product in the probe inspection process, it is not necessary to perform a visual inspection. Therefore, the throughput of the inspection process can be improved.

In the exposure method of the present invention, at least one of a plurality of exposure steps in the semiconductor device manufacturing process except a specific exposure step (ion implantation mask forming step, passivation film etching mask forming step). By applying it to the exposure step, a product in which a part generated near the edge of the wafer is chipped can be an electrically defective product such as a conduction defect or a short circuit. Therefore, the product can be reliably removed in the probe inspection process. Moreover, since the number of double exposures can be set to once, the throughput can be improved.

[Brief description of drawings]

FIG. 1 is an exposure explanatory diagram of a first embodiment.

FIG. 2 is an explanatory diagram of another example of setting a reticle blind.

FIG. 3 is an exposure explanatory diagram of the second embodiment.

FIG. 4 is an exposure explanatory diagram of the third embodiment.

FIG. 5 is a diagram illustrating a correspondence between an opening pattern and a double exposure area.

FIG. 6 is an exposure explanatory diagram of the fourth embodiment.

FIG. 7 is an explanatory diagram of exposure according to the fifth embodiment.

FIG. 8 is an explanatory diagram of exposure in a conventional example.

[Explanation of symbols]

 1 Reduction Projection Exposure Device 2 Reticle Blind 3 Reticle 5 Reticle 6 Reticle 7 Mask 23 Opening 32 Product Pattern 42 Product Pattern Image 53 Opening Pattern 62 Product Pattern 63 Opening Pattern 73 Opening 91 Wafer

Claims (7)

[Claims] 1. A product formed by transferring a product pattern of a reticle to a wafer and then transferring the product pattern in a photosensitive step of transferring a product pattern formed on a reticle to a wafer using a reduction projection exposure apparatus. A method for exposing a wafer, wherein a product pattern image in which a part of the pattern image generated near the edge of the wafer is missing is double exposed. 2. The wafer exposure method according to claim 1, wherein after the product pattern of the reticle is transferred to the wafer, the opening of the reticle blind of the reduction projection exposure apparatus is shifted with respect to the product pattern of the reticle. Is set to a different position, and subsequently, in the product pattern image formed by transferring the product pattern, a product pattern image in a state in which a part generated near the edge of the wafer is missing is double exposed. Wafer exposure method. 3. The wafer exposure method according to claim 1, wherein after the product pattern of the reticle is transferred to the wafer, the reticle is removed from the reduction projection exposure apparatus to remove the reticle blind of the reduction projection exposure apparatus. The opening is set to a predetermined size, and then, of the product pattern images formed by transferring the product pattern, a product pattern image in which a part of the product pattern image near the edge of the wafer is missing is double exposed. A method for exposing a wafer, comprising: 4. The wafer exposure method according to claim 1, wherein after transferring the product pattern of the reticle onto the wafer, the reticle installed in a reduction projection exposure apparatus is removed to form an opening pattern of a predetermined size. The formed double-exposure reticle is installed, and then, of the product pattern images formed by transferring the product pattern, the product pattern image in a state in which a part generated near the edge of the wafer is missing is double-exposed. A method for exposing a wafer, comprising: 5. The wafer exposure method according to claim 1, wherein the reduction projection exposure apparatus is provided with a reticle having a product pattern and an opening pattern for double exposure, and the product pattern of the reticle is subsequently used. Of the product pattern image formed by transferring the product pattern to the wafer by using the opening pattern of the reticle and then forming a part of the product pattern image near the edge of the wafer. A method for exposing a wafer, which comprises double exposing a pattern image. 6. The wafer exposure method according to claim 1, wherein after the product pattern of the reticle is transferred to the wafer, a part of the product pattern near the edge of the wafer is transferred in a state where a part of the product pattern is transferred. Of the product pattern image formed by transferring the product pattern by the unit-magnification projection exposure apparatus using the mask provided with the opening at the position
An exposure method for a wafer, which comprises double-exposing a product pattern image, which is produced in the vicinity of the edge of the wafer and is partially cut off. 7. Among a plurality of exposure steps in a semiconductor device manufacturing process, an exposure step of forming an ion implantation mask and an exposure step of forming an etching mask used when forming an opening pattern in a passivation film on a pad are performed. The method according to claim 1, wherein at least one exposure step is excluded.
A wafer exposure method using the wafer exposure method according to any one of claims 2, 3, 4, 5 and 6.