JPH07134398A - Photoresist composition - Google Patents
Photoresist compositionInfo
- Publication number
- JPH07134398A JPH07134398A JP25807993A JP25807993A JPH07134398A JP H07134398 A JPH07134398 A JP H07134398A JP 25807993 A JP25807993 A JP 25807993A JP 25807993 A JP25807993 A JP 25807993A JP H07134398 A JPH07134398 A JP H07134398A
- Authority
- JP
- Japan
- Prior art keywords
- parts
- weight
- photoresist composition
- polyvinyl alcohol
- dichromate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、リードフレームやシャ
ドウマスクなどのパターン形成を必要とする分野に有用
なフォトレジスト組成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoresist composition useful in fields requiring pattern formation such as lead frames and shadow masks.
【０００２】[0002]
【従来の技術】従来、エッチングレジストの感光性材料
として、ゼラチン、カゼイン等の天然化合物や、ポリビ
ニルアルコール等の合成高分子に、重クロム酸アンモニ
ウム等の光架橋試薬を混合した２成分系が用いられてい
る。しかし、ポリビニルアルコールは、高重合度である
と解像性が劣り、低重合度であると解像性は向上するが
現像時の密着性が悪いという問題があった。一方、エッ
チングレジストの密着性や解像性を向上させるためにポ
リビニルアルコールの変性を行おうとすると、手間やコ
ストがかかるという問題があった。2. Description of the Related Art Conventionally, as a photosensitive material for an etching resist, a two-component system in which a natural compound such as gelatin or casein or a synthetic polymer such as polyvinyl alcohol is mixed with a photocrosslinking reagent such as ammonium dichromate is used. Has been. However, polyvinyl alcohol has a problem that the resolution is inferior when the polymerization degree is high, and the resolution is improved when the polymerization degree is low, but the adhesion at the time of development is poor. On the other hand, when attempting to modify polyvinyl alcohol in order to improve the adhesion and resolution of the etching resist, there has been a problem that it takes time and cost.
【０００３】[0003]
【発明が解決しようとする課題】本発明者らは、ポリビ
ニルアルコール、重クロム酸塩および特定の官能基を有
する有機化合物を含むフォトレジスト組成物が、感度、
解像性、現像時の密着性および現像性に優れることを見
出し、本発明に至った。The present inventors have found that a photoresist composition containing polyvinyl alcohol, dichromate and an organic compound having a specific functional group has a high sensitivity,
The inventors have found that they have excellent resolution, adhesion during development, and developability, and have reached the present invention.
【０００４】[0004]
【課題を解決するための手段】すなわち、本発明は、 5
〜40重量％のポリビニルアルコール水溶液(A)100重量部
に対し、重クロム酸塩(B)0.1〜4 重量部と、官能基−Ｃ
ＯＮＲ1 Ｒ2(Ｒ1,Ｒ2は水素、アルキル基、フェニル
基、ベンジル基を示す。また、Ｒ1 およびＲ2 は環を形
成していてもよい。）または−ＣＨＯを分子中に少なく
とも１つ有する有機化合物(C) 0.01〜15重量部を含有す
るフォトレジスト組成物を提供する。That is, the present invention provides 5
0.1 to 4 parts by weight of dichromate (B) and functional group-C per 100 parts by weight of polyvinyl alcohol aqueous solution (A) of 40% by weight.
ONR 1 R 2 (R 1 and R 2 represent hydrogen, an alkyl group, a phenyl group and a benzyl group, and R 1 and R 2 may form a ring) or —CHO at least in the molecule. Provided is a photoresist composition containing 0.01 to 15 parts by weight of one organic compound (C).
【０００５】ポリビニルアルコールとしては特に制限は
ないが、重合度 200〜1500、さらには 300〜700 のもの
が好ましい。重合度が1500より高い場合には充分な解像
性が得られず、逆に 200より低い場合には密着性に問題
が生じる。また、ケン化度は70〜98、さらには75〜95の
ものが好適に用いるられる。ケン化度が98を越えるとポ
ットライフや水溶性に問題があり、70未満であると密着
性が劣る。なお、ポリビニルアルコールは、カルボン酸
塩、ホルマール、ブチラール変性されたものであっても
よい。また、ポリビニルアルコールは、２種以上を混合
して用いてもよい。The polyvinyl alcohol is not particularly limited, but those having a polymerization degree of 200 to 1500, and more preferably 300 to 700 are preferable. When the degree of polymerization is higher than 1500, sufficient resolution cannot be obtained, and on the contrary, when the degree of polymerization is lower than 200, problems arise in adhesion. Further, those having a saponification degree of 70 to 98, more preferably 75 to 95, are preferably used. When the saponification degree exceeds 98, there is a problem in pot life and water solubility, and when it is less than 70, the adhesion is poor. The polyvinyl alcohol may be modified with a carboxylate, formal, or butyral. Moreover, you may use polyvinyl alcohol in mixture of 2 or more types.
【０００６】重クロム酸塩(B) としては、重クロム酸ア
ンモニウム、重クロム酸カリウム等が挙げられる。重ク
ロム酸塩(B) は、5 〜40重量％のポリビニルアルコール
水溶液(A)100重量部に対し、 0.1〜4 重量部、好ましく
は 0.2〜1 重量部用いられる。Examples of the dichromate (B) include ammonium dichromate and potassium dichromate. The dichromate (B) is used in an amount of 0.1 to 4 parts by weight, preferably 0.2 to 1 part by weight, based on 100 parts by weight of the polyvinyl alcohol aqueous solution (A) of 5 to 40% by weight.
【０００７】特定の官能基を有する有機化合物(C) とし
ては、例えば、ホルムアミド、N,N-ジメチルホルムアミ
ド、N-メチルホルムアミド、N-ベンジルホルムアミド、
ホルムアニリド、アセトアミド、N,N-ジメチルアセトア
ミド、N,N-ジエチルアセトアミド、N-メチルアセトアミ
ド、アセトアニリド、プロピオンアミド、n-ブチルアミ
ド、i-ブチルアミド、マロンアミド、ベンズアミド、ア
セトアルデヒド、プロピオンアルデヒドおよびε−カプ
ロラクタム等が挙げられ、これらの１種または２種以上
が用いられる。有機化合物(C) は、5 〜40重量％のポリ
ビニルアルコール水溶液(A)100重量部に対し、0.01〜15
重量部、好ましくは 0.1〜10重量部用いられる。Examples of the organic compound (C) having a specific functional group include formamide, N, N-dimethylformamide, N-methylformamide, N-benzylformamide,
Formanilide, acetamide, N, N-dimethylacetamide, N, N-diethylacetamide, N-methylacetamide, acetanilide, propionamide, n-butylamide, i-butylamide, malonamide, benzamide, acetaldehyde, propionaldehyde and ε-caprolactam, etc. And one or more of these are used. The organic compound (C) is added in an amount of 0.01 to 15 to 100 parts by weight of a polyvinyl alcohol aqueous solution (A) of 5 to 40% by weight.
Parts by weight, preferably 0.1 to 10 parts by weight are used.
【０００８】本発明のフォトレジスト組成物は、感度が
高く、高解像性を有するとともに現像時の密着性に優れ
るため、微細パターンを必要とするリードフレーム、シ
ャドウマスクの製造に好適に用いられる。Since the photoresist composition of the present invention has high sensitivity, high resolution and excellent adhesion at the time of development, it is suitable for use in the production of lead frames and shadow masks that require fine patterns. .
【０００９】次に、本発明のフォトレジスト組成物を用
いてリソグラフィーを行なう方法について説明する。ま
ず、本発明のフォトレジスト組成物を、処理すべき基材
上にスピンコーター、バーコーター等を用いて均一に塗
布し、プリベーク処理を施して厚さ 1〜10μｍ程度のレ
ジスト膜を形成させる。プリベーク条件は使用したポリ
ビニルアルコールおよび有機化合物にもよるが、一般に
温度30〜80℃、時間 5〜15分程度が適当である。Next, a method of carrying out lithography using the photoresist composition of the present invention will be described. First, the photoresist composition of the present invention is uniformly applied onto a substrate to be treated by using a spin coater, a bar coater or the like, and prebaked to form a resist film having a thickness of about 1 to 10 μm. The prebaking condition depends on the polyvinyl alcohol and the organic compound used, but generally a temperature of 30 to 80 ° C. and a time of 5 to 15 minutes are suitable.
【００１０】続いて、レジスト膜の不溶化させたい部分
に紫外線を照射してパターン描画を行い、さらに現像液
で処理し未露光部分を選択的に溶解除去することによ
り、レジストパターンを形成する。現像液としては、
水、温水等が好適に用いられる。レジストパターンを形
成した基材に、必要に応じてポストベーク処理を施した
後、エッチング処理を行い、基材露出部にエッチングパ
ターンを形成する。ポストベーク処理は、そのまま、ま
たは酸化クロム水溶液に浸漬した後、例えば温度110〜1
50 ℃、時間10〜30分の条件で行なう。エッチングはド
ライエッチング、ウエットエッチングいずれも適応可能
である。エッチング後、残存するレジストパターンを剥
離等により除去すれば、リソグラフィー工程の１サイク
ルが終了する。Subsequently, a portion of the resist film to be insolubilized is irradiated with ultraviolet rays to draw a pattern, and is further treated with a developing solution to selectively dissolve and remove the unexposed portion to form a resist pattern. As a developer,
Water or warm water is preferably used. The base material on which the resist pattern is formed is post-baked if necessary, and then is etched to form an etching pattern on the exposed portion of the base material. The post-baking treatment is performed as it is or after being immersed in an aqueous solution of chromium oxide, for example, at a temperature of 110 to 1
Perform at 50 ℃ for 10 to 30 minutes. Both dry etching and wet etching can be applied. After etching, if the remaining resist pattern is removed by peeling or the like, one cycle of the lithography process is completed.
【００１１】[0011]
【実施例】以下、本発明を実施例により具体的に説明す
る。例中、部は重量部を表す。 〔実施例１〕水80部に、ケン化度87、重合度 500のポリ
ビニルアルコール20部を溶解させた水溶液 100部に、ア
セトアルデヒド 3部および重クロム酸アンモニウム 0.2
部を混合溶解させた水溶液を、厚さ 150μｍの銅材にス
ピンコーターを用いて塗布、その後乾燥させ、厚さ10μ
ｍのレジスト膜を形成させた。 〔実施例２〕アセトアルデヒドをアセトアミドに代えた
以外は、実施例１と同様にして、厚さ10μｍのレジスト
膜を形成させた。EXAMPLES The present invention will be specifically described below with reference to examples. In the examples, parts represent parts by weight. [Example 1] 3 parts of acetaldehyde and 0.2 parts of ammonium dichromate were dissolved in 100 parts of an aqueous solution prepared by dissolving 20 parts of polyvinyl alcohol having a saponification degree of 87 and a polymerization degree of 500 in 80 parts of water.
Part of the solution is mixed and dissolved in a copper material with a thickness of 150 μm using a spin coater and then dried to a thickness of 10 μm.
m resist film was formed. Example 2 A resist film having a thickness of 10 μm was formed in the same manner as in Example 1 except that acetaldehyde was used instead of acetaldehyde.
【００１２】〔実施例３〕水85部に、ケン化度93、重合
度 700のポリビニルアルコール10部およびケン化度93、
重合度 300のポリビニルアルコール 5部を溶解させた水
溶液 100部に、アセトアミド10部および重クロム酸アン
モニウム 1.0部を混合溶解させた水溶液を用い、実施例
１と同様にして、厚さ10μｍのレジスト膜を形成させ
た。 〔比較例１〕アセトアルデヒドを除いた以外は、実施例
１と同様にして、厚さ10μｍのレジスト膜を形成させ
た。Example 3 In 85 parts of water, 10 parts of polyvinyl alcohol having a saponification degree of 93 and a polymerization degree of 700 and a saponification degree of 93,
An aqueous solution prepared by mixing 10 parts of acetamide and 1.0 part of ammonium dichromate in 100 parts of an aqueous solution of 5 parts of polyvinyl alcohol having a degree of polymerization of 300 was dissolved in the same manner as in Example 1 to form a resist film having a thickness of 10 μm. Was formed. Comparative Example 1 A resist film having a thickness of 10 μm was formed in the same manner as in Example 1 except that acetaldehyde was removed.
【００１３】実施例１〜３および比較例１で得られたレ
ジスト膜に、ネガフィルム（コダック社製「No.2ステッ
プタブレット」）を介して、高圧水銀ランプで 500mJ/c
m2の紫外線を照射し、水で現像した後、レジストパター
ンの外観を観察した。また、レジスト膜が基材上に残存
した段数を測定して、感度を評価した。結果を表１に示
す。500 mJ / c of high pressure mercury lamp was applied to the resist films obtained in Examples 1 to 3 and Comparative Example 1 through a negative film ("No. 2 step tablet" manufactured by Kodak Co., Ltd.).
After irradiating with m 2 of ultraviolet rays and developing with water, the appearance of the resist pattern was observed. Further, the number of steps in which the resist film remained on the substrate was measured to evaluate the sensitivity. The results are shown in Table 1.
【００１４】[0014]
【表１】 [Table 1]
【００１５】[0015]
【発明の効果】本発明により、感度、解像性、現像時の
密着性、現像性に優れるフォトレジスト組成物が得られ
るようになった。According to the present invention, a photoresist composition having excellent sensitivity, resolution, adhesion during development and developability has been obtained.
Claims (2)
液(A)100重量部に対し、重クロム酸塩(B)0.1〜4 重量部
と、官能基−ＣＯＮＲ1 Ｒ2(Ｒ1,Ｒ2 は水素、アルキル
基、フェニル基、ベンジル基を示す。また、Ｒ1 および
Ｒ2 は環を形成していてもよい。）または−ＣＨＯを分
子中に少なくとも１つ有する有機化合物(C) 0.01〜15重
量部を含有することを特徴とするフォトレジスト組成
物。1. A dichromate (B) of 0.1 to 4 parts by weight and a functional group --CONR 1 R 2 (R 1 , R 2 ) per 100 parts by weight of a polyvinyl alcohol aqueous solution (A) of 5 to 40% by weight. Represents hydrogen, an alkyl group, a phenyl group, a benzyl group, and R 1 and R 2 may form a ring) or an organic compound (C) 0.01-having at least one —CHO in the molecule. A photoresist composition comprising 15 parts by weight.
メチルホルムアミド、N-メチルホルムアミド、N-ベンジ
ルホルムアミド、ホルムアニリド、アセトアミド、N,N-
ジメチルアセトアミド、N,N-ジエチルアセトアミド、N-
メチルアセトアミド、アセトアニリド、プロピオンアミ
ド、n-ブチルアミド、i-ブチルアミド、マロンアミド、
ベンズアミド、アセトアルデヒド、プロピオンアルデヒ
ドおよびε−カプロラクタムから選ばれる少なくとも１
種であることを特徴とする請求項１記載のフォトレジス
ト組成物。2. The organic compound (C) is formamide, N, N-dimethylformamide, N-methylformamide, N-benzylformamide, formanilide, acetamide, N, N-
Dimethylacetamide, N, N-diethylacetamide, N-
Methylacetamide, acetanilide, propionamide, n-butylamide, i-butylamide, malonamide,
At least one selected from benzamide, acetaldehyde, propionaldehyde and ε-caprolactam
The photoresist composition of claim 1, which is a seed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25807993A JPH07134398A (en) | 1993-10-15 | 1993-10-15 | Photoresist composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25807993A JPH07134398A (en) | 1993-10-15 | 1993-10-15 | Photoresist composition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07134398A true JPH07134398A (en) | 1995-05-23 |
Family
ID=17315236
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25807993A Pending JPH07134398A (en) | 1993-10-15 | 1993-10-15 | Photoresist composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07134398A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7354808B2 (en) | 2003-08-15 | 2008-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Resist composition and method for manufacturing semiconductor device using the same |
-
1993
- 1993-10-15 JP JP25807993A patent/JPH07134398A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7354808B2 (en) | 2003-08-15 | 2008-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Resist composition and method for manufacturing semiconductor device using the same |
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