JPH07131243A - Voltage-controlled oscillator - Google Patents
Voltage-controlled oscillatorInfo
- Publication number
- JPH07131243A JPH07131243A JP27061293A JP27061293A JPH07131243A JP H07131243 A JPH07131243 A JP H07131243A JP 27061293 A JP27061293 A JP 27061293A JP 27061293 A JP27061293 A JP 27061293A JP H07131243 A JPH07131243 A JP H07131243A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- capacitor
- external terminal
- voltage
- inductance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は高周波発振を可能にする
電圧制御発振器に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a voltage controlled oscillator capable of high frequency oscillation.
【0002】[0002]
【従来の技術】近年、BSチューナの周波数変換部とい
った2GHz帯の高周波を扱うブロックも集積回路化が
進められている。従来、周波数変換に用いられる局部発
振器としての電圧制御発振器は、発振の安定度の点から
クラップ発振回路がよく用いられ、図3のように構成さ
れていた。2. Description of the Related Art In recent years, blocks that handle high frequencies in the 2 GHz band, such as the frequency converter of a BS tuner, are being integrated into circuits. Conventionally, as a voltage controlled oscillator as a local oscillator used for frequency conversion, a Clap oscillation circuit is often used in terms of stability of oscillation, and is configured as shown in FIG.
【0003】図3において、1は発振周波数を決定する
共振回路、Lは共振回路を構成するインダクタンス、C
vは共振回路を構成するバリキャップダイオード、R1
は抵抗、Vtはバリキャップダイオードに同調電圧を印
加するための電圧源、C3は直流阻止のためのコンデン
サ、C1,C2は発振器の負性抵抗を増すためのコンデ
ンサ、2は集積回路、P1,P2,P3,P4は集積回
路の外部端子、Qはトランジスタ、R2,R3,R4は
トランジスタをバイアスする抵抗、Vccはトランジスタ
をバイアスする電圧源である。In FIG. 3, 1 is a resonance circuit that determines the oscillation frequency, L is the inductance that constitutes the resonance circuit, and C
v is a varicap diode that constitutes a resonance circuit, R1
Is a resistor, Vt is a voltage source for applying a tuning voltage to the varicap diode, C3 is a capacitor for blocking direct current, C1, C2 are capacitors for increasing the negative resistance of the oscillator, 2 is an integrated circuit, P1, P2, P3 and P4 are external terminals of the integrated circuit, Q is a transistor, R2, R3 and R4 are resistors for biasing the transistor, and Vcc is a voltage source for biasing the transistor.
【0004】図3において、直流バイアス素子を省略し
て交流等価回路に置き換えると、図4のようになる。電
圧源 Vt,VccとコンデンサC3は短絡され、抵抗R
1,R2,R3,R4は開放される。集積回路の外部端
子間には浮遊容量が存在している。高周波用集積回路で
はGND端子を数多く配置しているため、GNDとの間
に存在する浮遊容量が大きく特に考慮する必要がある。
図4では、外部端子P2,P3とGND間に付随する浮
遊容量をCP2,CP3で示してある。When the DC bias element is omitted in FIG. 3 and replaced with an AC equivalent circuit, the result is as shown in FIG. The voltage sources Vt, Vcc and the capacitor C3 are short-circuited, and the resistor R
1, R2, R3 and R4 are opened. Stray capacitance exists between the external terminals of the integrated circuit. Since a large number of GND terminals are arranged in the high frequency integrated circuit, the stray capacitance existing between the GND terminals is large, and it is necessary to take special consideration.
In FIG. 4, stray capacitances associated between the external terminals P2 and P3 and GND are indicated by CP2 and CP3.
【0005】以上のように構成された電圧制御発振器に
付いて、以下その動作について説明する。発振周波数の
変化はバリキャップダイオードCvに印加される直流電
圧を変化させ、容量値を変化することによってなされ
る。発振条件としては、インダクタンスLからトランジ
スタQ側を見たときに負性抵抗がえられること、言い替
えれば反射係数が1より大きいことが必要である。コン
デンサC1,C2の値は発振器の負性抵抗が十分得られ
るように設定されるが、1GHz以上の高周波で発振さ
せる場合には1pF程度の値に設定される。The operation of the voltage-controlled oscillator configured as described above will be described below. The oscillation frequency is changed by changing the DC voltage applied to the varicap diode Cv to change the capacitance value. As an oscillation condition, it is necessary that a negative resistance be obtained when the transistor Q side is seen from the inductance L, in other words, a reflection coefficient is larger than 1. The values of the capacitors C1 and C2 are set so that the negative resistance of the oscillator is sufficiently obtained, but when oscillating at a high frequency of 1 GHz or more, they are set to a value of about 1 pF.
【0006】[0006]
【発明が解決しようとする課題】しかしながら上記従来
の構成では、外部端子の浮遊容量CP2,CP3が発振器の
負性抵抗に大きく影響を与える。浮遊容量は、通常、1
pF近く存在しており、コンデンサC1,C2に比べ無
視できない程度の値であるため、発振器の負性抵抗を低
下させ、発振停止を招く。However, in the above conventional configuration, the stray capacitances CP2 and CP3 of the external terminals have a great influence on the negative resistance of the oscillator. Stray capacitance is usually 1
Since it exists near pF and has a value that cannot be ignored as compared with the capacitors C1 and C2, it lowers the negative resistance of the oscillator and causes oscillation stop.
【0007】特に、浮遊容量CP2は増幅素子であるトラ
ンジスタQのベースに付随するため、その影響が大き
い。In particular, the stray capacitance CP2 is associated with the base of the transistor Q, which is an amplifying element, so that its influence is great.
【0008】本発明は、上記従来の問題点を解決するも
ので、集積回路の外部端子の浮遊容量に影響されず、高
周波でも安定に発振させることができる電圧制御発振器
を提供することを目的とする。The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a voltage-controlled oscillator which can be stably oscillated even at a high frequency without being affected by the stray capacitance of the external terminal of the integrated circuit. To do.
【0009】[0009]
【課題を解決するための手段】この目的を達成するため
に、本発明の電圧制御発振器は、ベースにインダクタン
スの一端が接続されたトランジスタと上記インダクタン
スとが形成された半導体基板を有した集積回路を備え、
上記集積回路の内部では上記インダクタンスの他端が上
記集積回路の外部端子に接続されており、更に、上記集
積回路の外部ではバリキャップダイオードが上記外部端
子に接続されるという構成を有している。In order to achieve this object, a voltage controlled oscillator according to the present invention is an integrated circuit having a transistor in which one end of an inductance is connected to a base and a semiconductor substrate in which the inductance is formed. Equipped with
Inside the integrated circuit, the other end of the inductance is connected to an external terminal of the integrated circuit, and further, outside the integrated circuit, a varicap diode is connected to the external terminal. .
【0010】[0010]
【作用】この構成によって、トランジスタのベースが外
部端子に直接に接続されないため、外部端子の浮遊容量
が発振器の負性抵抗に影響を与えることがなく、十分な
発振安定度を得ることができる。With this configuration, since the base of the transistor is not directly connected to the external terminal, the stray capacitance of the external terminal does not affect the negative resistance of the oscillator, and sufficient oscillation stability can be obtained.
【0011】[0011]
【実施例】図1は本発明の一実施例による電圧制御発振
器である。図1において、1は発振周波数を決定する共
振回路、Lは共振回路を構成するインダクタンス、Cv
は共振回路を構成するバリキャップダイオード、R1
は抵抗、Vtはバリキャップダイオードに同調電圧を印
加するための電圧源、C3は直流阻止のためのコンデン
サ、C1,C2は発振器の負性抵抗を増すためのコンデ
ンサ、Qはトランジスタ、R2,R3,R4はトランジ
スタをバイアスする抵抗、2は集積回路、P1,P2,
P3,P4は集積回路の外部端子、Vccはトランジスタ
をバイアスする電圧源であり、これらは従来例と同じで
ある。従来例と異なるのは、インダクタンスLとコンデ
ンサC1を集積回路内に取り込み、半導体基板上に形成
している点である。半導体基板上では、素子間を結合す
るためにアルミニウムなどの金属を用いて内部配線して
おり、この内部配線を用いればインダクタンスを形成す
ることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a voltage controlled oscillator according to an embodiment of the present invention. In FIG. 1, 1 is a resonance circuit that determines the oscillation frequency, L is an inductance that forms the resonance circuit, and Cv
Is a varicap diode that constitutes a resonance circuit, R1
Is a resistor, Vt is a voltage source for applying a tuning voltage to the varicap diode, C3 is a capacitor for blocking direct current, C1, C2 are capacitors for increasing the negative resistance of the oscillator, Q is a transistor, R2, R3. , R4 is a resistor for biasing a transistor, 2 is an integrated circuit, P1, P2,
P3 and P4 are external terminals of the integrated circuit, Vcc is a voltage source for biasing the transistor, and these are the same as in the conventional example. The difference from the conventional example is that the inductance L and the capacitor C1 are incorporated in an integrated circuit and formed on a semiconductor substrate. On the semiconductor substrate, metal such as aluminum is used for internal wiring to couple the elements, and an inductance can be formed by using this internal wiring.
【0012】図1において、直流バイアス素子を省略し
て交流等価回路に置き換えると、図2のようになる。電
圧源Vt,VccとコンデンサC3は短絡され、抵抗R
1,R2,R3,R4は開放される。さらに、図2で
は、外部端子P2,P3に付随する浮遊容量をCP2,C
P3で示してある。従来例と異なり、トランジスタQのベ
ースには浮遊容量が存在しない。When the DC bias element is omitted in FIG. 1 and replaced with an AC equivalent circuit, the result is as shown in FIG. The voltage sources Vt, Vcc and the capacitor C3 are short-circuited, and the resistor R
1, R2, R3 and R4 are opened. Further, in FIG. 2, stray capacitances associated with the external terminals P2 and P3 are shown as CP2 and C2.
This is indicated by P3. Unlike the conventional example, the base of the transistor Q has no stray capacitance.
【0013】以上のように構成された電圧制御発振器に
ついて、以下その動作について説明する。発振周波数の
変化は、バリキャップダイオードCvに印加される直流
電圧を変化させ、容量値を変化することによってなされ
る。外部端子P2の浮遊容量CP2がバリキャップダイオ
ードCvに並列に存在するが、バリキャップダイオード
Cvの容量値が可変できるので、浮遊容量CP2の影響を
調整することができる。発振条件としては、インダクタ
ンスLからトランジスタQ側を見たときに負性抵抗がえ
られること、言い替えれば反射係数が1より大きいこと
が必要である。コンデンサC2,C3の値は発振器の負
性抵抗が十分得られるように設定される。外部端子P3
の浮遊容量CP3がコンデンサC2に並列に存在するが、
コンデンサC2の容量値は任意に選ぶことができるの
で、浮遊容量CP3の影響を含めて適正値に設定すること
ができる。The operation of the voltage controlled oscillator configured as described above will be described below. The oscillation frequency is changed by changing the DC voltage applied to the varicap diode Cv and changing the capacitance value. Although the stray capacitance CP2 of the external terminal P2 exists in parallel with the varicap diode Cv, since the capacitance value of the varicap diode Cv can be changed, the influence of the stray capacitance CP2 can be adjusted. As an oscillation condition, it is necessary that a negative resistance be obtained when the transistor Q side is seen from the inductance L, in other words, a reflection coefficient is larger than 1. The values of the capacitors C2 and C3 are set so that the negative resistance of the oscillator is sufficiently obtained. External terminal P3
Stray capacitance CP3 exists in parallel with the capacitor C2,
Since the capacitance value of the capacitor C2 can be arbitrarily selected, it can be set to an appropriate value including the influence of the stray capacitance CP3.
【0014】以上のように本実施例によれば、インダク
タンスLを半導体基板上に構成したことにより、トラン
ジスタQのベースには浮遊容量が存在しない。また、外
部端子の浮遊容量CP2,CP3の影響はバリキャップダイ
オードCv,コンデンサC2を調整することで吸収でき
る。従って発振条件として必要な負性抵抗を十分に得る
ことが可能となる。As described above, according to this embodiment, since the inductance L is formed on the semiconductor substrate, the base of the transistor Q has no stray capacitance. Further, the influence of the stray capacitances CP2 and CP3 of the external terminals can be absorbed by adjusting the varicap diode Cv and the capacitor C2. Therefore, it is possible to sufficiently obtain the negative resistance required as the oscillation condition.
【0015】なお本実施例では、コンデンサC1を半導
体基板上に形成しているが、トランジスタQのベース・
エミッタ間には拡散容量が存在するためコンデンサC1
は必ずしも必要ではない。また、コンデンサC2を半導
体基板上に形成することにより、外部端子P3を削除し
てもよい。In this embodiment, the capacitor C1 is formed on the semiconductor substrate, but the base of the transistor Q
Since there is a diffusion capacitance between the emitters, the capacitor C1
Is not always necessary. Further, the external terminal P3 may be eliminated by forming the capacitor C2 on the semiconductor substrate.
【0016】[0016]
【発明の効果】以上のように本発明の電圧制御発振器
は、共振回路のインダクタンスを半導体基板上に形成し
たことにより、トランジスタのベースに浮遊容量が存在
しないため、1GHz以上の高周波でも十分な負性抵抗
を得ることができ安定な発振を実現することができると
いう効果が得られる。As described above, in the voltage controlled oscillator according to the present invention, since the inductance of the resonance circuit is formed on the semiconductor substrate, there is no stray capacitance in the base of the transistor, so that a sufficient negative voltage is obtained even at a high frequency of 1 GHz or more. It is possible to obtain the effect that the sexual resistance can be obtained and stable oscillation can be realized.
【図1】本発明の一実施例における電圧制御発振器の回
路図FIG. 1 is a circuit diagram of a voltage controlled oscillator according to an embodiment of the present invention.
【図2】同電圧制御発振器の交流等価回路の一例を示す
図FIG. 2 is a diagram showing an example of an AC equivalent circuit of the voltage controlled oscillator.
【図3】従来の電圧制御発振器の回路の一例を示す図FIG. 3 is a diagram showing an example of a circuit of a conventional voltage controlled oscillator.
【図4】図3の交流等価回路の一例を示す図FIG. 4 is a diagram showing an example of the AC equivalent circuit of FIG.
1 共振回路 2 集積回路 Cv バリキャップダイオード L インダクタンス Q トランジスタ Vt,Vcc 電圧源 CP2,CP3 浮遊容量 C1,C2,C3 コンデンサ R1,R2,R3,R4 抵抗 P1,P2,P3,P4 集積回路の外部端子 1 Resonant Circuit 2 Integrated Circuit Cv Varicap Diode L Inductance Q Transistor Vt, Vcc Voltage Source CP2, CP3 Stray Capacitance C1, C2, C3 Capacitor R1, R2, R3, R4 Resistor P1, P2, P3, P4 External Terminal of Integrated Circuit
Claims (1)
れたトランジスタと上記インダクタンスとが形成された
半導体基板を有した集積回路を備え、上記集積回路の内
部では上記インダクタンスの他端が上記集積回路の外部
端子に接続されており、更に、上記集積回路の外部では
バリキャップダイオードが上記外部端子に接続されてな
る電圧制御発振器。1. An integrated circuit comprising: a transistor having a base to which one end of an inductance is connected; and a semiconductor substrate on which the inductance is formed. Inside the integrated circuit, the other end of the inductance is outside the integrated circuit. A voltage-controlled oscillator which is connected to a terminal and further has a varicap diode connected to the external terminal outside the integrated circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27061293A JPH07131243A (en) | 1993-10-28 | 1993-10-28 | Voltage-controlled oscillator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27061293A JPH07131243A (en) | 1993-10-28 | 1993-10-28 | Voltage-controlled oscillator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07131243A true JPH07131243A (en) | 1995-05-19 |
Family
ID=17488519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27061293A Pending JPH07131243A (en) | 1993-10-28 | 1993-10-28 | Voltage-controlled oscillator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07131243A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002015272A1 (en) * | 2000-08-14 | 2002-02-21 | Niigata Seimitsu Co., Ltd. | Tuner device |
KR100342373B1 (en) * | 1999-08-31 | 2002-07-03 | 가타오카 마사타카 | Voltage controlled oscillator |
JP2011082711A (en) * | 2009-10-05 | 2011-04-21 | Nippon Dempa Kogyo Co Ltd | Voltage-controlled oscillator |
WO2012095208A1 (en) * | 2011-01-13 | 2012-07-19 | Sb Limotive Germany Gmbh | Device for measuring a battery voltage |
JP2012156700A (en) * | 2011-01-25 | 2012-08-16 | Ricoh Co Ltd | Error amplification circuit and switching regulator |
US8283989B2 (en) | 2009-10-05 | 2012-10-09 | Nihon Dempa Kogyo Co., Ltd. | Voltage controlled oscillator |
US8289093B2 (en) | 2009-10-05 | 2012-10-16 | Nihon Dempa Kogyo Co., Ltd. | Voltage controlled oscillator |
US8416028B2 (en) | 2009-10-05 | 2013-04-09 | Nihon Dempa Kogyo Co., Ltd. | Voltage controlled oscillator and electronic component |
US8508305B2 (en) | 2010-10-20 | 2013-08-13 | Lapis Semiconductor Co., Ltd. | Oscillation circuit |
-
1993
- 1993-10-28 JP JP27061293A patent/JPH07131243A/en active Pending
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100342373B1 (en) * | 1999-08-31 | 2002-07-03 | 가타오카 마사타카 | Voltage controlled oscillator |
WO2002015272A1 (en) * | 2000-08-14 | 2002-02-21 | Niigata Seimitsu Co., Ltd. | Tuner device |
JP2011082711A (en) * | 2009-10-05 | 2011-04-21 | Nippon Dempa Kogyo Co Ltd | Voltage-controlled oscillator |
US8283989B2 (en) | 2009-10-05 | 2012-10-09 | Nihon Dempa Kogyo Co., Ltd. | Voltage controlled oscillator |
US8289093B2 (en) | 2009-10-05 | 2012-10-16 | Nihon Dempa Kogyo Co., Ltd. | Voltage controlled oscillator |
US8416028B2 (en) | 2009-10-05 | 2013-04-09 | Nihon Dempa Kogyo Co., Ltd. | Voltage controlled oscillator and electronic component |
US8547183B2 (en) | 2009-10-05 | 2013-10-01 | Nihon Dempa Kogyo Co., Ltd. | Voltage controlled oscillator |
US8508305B2 (en) | 2010-10-20 | 2013-08-13 | Lapis Semiconductor Co., Ltd. | Oscillation circuit |
WO2012095208A1 (en) * | 2011-01-13 | 2012-07-19 | Sb Limotive Germany Gmbh | Device for measuring a battery voltage |
JP2012156700A (en) * | 2011-01-25 | 2012-08-16 | Ricoh Co Ltd | Error amplification circuit and switching regulator |
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