JPH07122480A - Reflection type mask - Google Patents

Abstract

PURPOSE:To provide a reflection type mask capable of sharply transferring a pattern having a desired shape formed on a reflection type mask to a photosensitive member like resist, so as to have high precision and high contrast. CONSTITUTION:A reflection type mask 1 is provided with a pattern having a desired shape and contains a board 2 on which a pattern having a desired shape is formed. A part corresponding with the pattern having a desired shape forms a protruding part 4, and the residual part forms a recessed part 5. The top part surface 3a of the protruding part 4 has light reflection characteristics, and the side wall 5S and the bottom surface 7 of the recessed part 5 have, at least, light absorption characteristics.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reflective mask,
In particular, the pattern of the desired shape provided on the reflective mask,
The present invention relates to a reflective mask capable of sharply transferring to a photosensitive member such as a resist with high accuracy and high contrast.

[0002]

X-ray lithography is widely used in the process of manufacturing fine structures such as semiconductor devices, micromachines, optical elements, sensors and actuators.

Among X-ray lithography, a soft X-ray (wavelength region of about 5 nm to about 13 nm) is used as a light source, and a desired shape provided on an X-ray mask is formed on a photosensitive member such as a resist formed on the surface of a wafer or the like. Reduction projection exposure X-ray lithography that uses soft X-rays to transfer the above pattern as a reduced shape pattern is a fine pattern of the order of micrometers (μm) or sub-micrometer (10 ⁻¹ μm). Attention has been paid to this process as a process for forming a fine structure that may have

FIG. 23 shows the applied physics Vol. 62, No. 7 (19).
93), and is a configuration diagram schematically showing an example of a conventional X-ray reduction exposure apparatus described in pages 691 to 694.

Referring to FIG. 23, this X-ray reduction exposure apparatus 200 includes a reflective mask 201 and a plurality of mirrors 20.
3, 204 are included.

Each of the plurality of mirrors 203 and 204 has a mirror surface having a predetermined curvature.

Next, the operation of the X-ray reduction exposure apparatus 200 will be described below. First, the reflective mask 201
Are placed on a reflective mask mount 206 provided at a predetermined position in the X-ray reduction exposure apparatus 200.

A wafer 205 is prepared, and a photosensitive member (not shown) such as a resist is formed on the surface of the wafer 205.

Next, a photosensitive member such as a resist (not shown)
The wafer 205 having the surface formed thereon is mounted on the wafer mounting member 20 provided at a predetermined position in the X-ray reduction exposure apparatus 200.
Place on 7.

Next, from a light source (not shown), for example,
The reflective mask 201 is irradiated with light in the ultraviolet region such as soft X-rays.

When the reflective mask 201 is irradiated with light 208 in the ultraviolet range such as soft X-rays, it reflects light 209 in the ultraviolet range such as soft X-rays having a desired pattern provided on the reflective mask 201. To do.

Soft X reflected by the reflective mask 201
The light 209 in the ultraviolet region such as a line emits a plurality of mirrors 203,
The reflection is sequentially repeated by 204, and reaches a photosensitive member (not shown) such as a resist formed on the surface of the wafer 205.

The pattern of the desired shape provided on the reflective mask 201 is successively reduced by the plurality of mirrors 203 and 204.

Then, the pattern of the desired shape provided on the reflective mask 201 is transferred as a reduced pattern onto a photosensitive member (not shown) such as a resist formed on the surface of the wafer 205.

FIG. 24 shows the X-ray reduction exposure apparatus 20 described above.
It is sectional drawing which shows roughly the conventional reflective mask used for X-ray exposure apparatuses, such as 0.

Referring to FIG. 24, this reflective mask 30
Reference numeral 1 denotes a substrate 302 having a light-absorbing property of absorbing light in the ultraviolet region such as X-rays, and a light-reflecting property of reflecting light in the ultraviolet region such as X-rays formed on the surface 302a of the substrate 302. And a light reflecting member 303 having the same.

As the substrate 302, for example, a silicon (Si) substrate is used as a member having a light absorbing property of absorbing light in the ultraviolet region such as X-rays.

When the light reflecting member 303 uses light in the ultraviolet region on the long wavelength side exceeding 12.5 nm as the wavelength region of the light used for the exposure, it depends on the wavelength region of the light used for the exposure. Is molybdenum (Mo)
And a silicon (Si) are alternately laminated, a Mo / Si multilayer film is used, and the wavelength range of light used for exposure is 1
When using light in the ultraviolet region on the short wavelength side of 2.5 nm or less, ruthenium (Ru) and boron carbide (generally,
B / C ₄ ) and Ru / B ₄ alternately laminated.
C multilayer film or NiC in which an alloy (NiCr) of nickel (Ni) and chromium (Cr) and carbon (C) are alternately laminated
A multilayer film such as an r / C multilayer film is used.

By the way, in the reflective mask 301,
A pattern having a desired shape is formed by the light reflecting member 303. A convex portion 304 is formed in the portion corresponding to the pattern of the desired shape. The convex portion 304 is composed of the light reflecting member 303.

A concave portion 305 is formed in the remaining portion other than the portion where the light reflecting member 303 is provided.

The concave portion 305 has a side wall 303S formed of the light reflecting member 303 and a bottom surface 3 formed of the substrate 302.
07 and. The bottom surface 307 has a light absorbing property.

Next, the operating principle of the reflective mask 301 will be described. X on the reflective mask 301
Of the light R _i1, R _i2 in the ultraviolet region of the line such as light R _i1 incident on the top surface 303a of the light reflecting member 303 is reflected by the top surface 303a of the light reflecting member 303, a photosensitive member such as a resist, Reach (not shown).

On the other hand, the X radiated on the reflection type mask 301
Of the light in the ultraviolet region such as a line, the light R _i2 incident on the concave portion 305 is absorbed by the bottom surface 307 of the concave portion 305 or scattered by the surface roughness of the bottom surface 307 of the concave portion 305 to be attenuated.

Then, on a photosensitive member (not shown) such as a resist, the amount of light R _e1 reflected by the top surface 303a of the light reflecting member 303 and the light R attenuated by the recess 305 are provided.
The pattern of the desired shape provided on the reflective mask 301 is transferred due to the difference from the light amount of _e2 .

Next, a conventional method of manufacturing a reflective mask will be described below with reference to the drawings.

25 to 26 are sectional views schematically showing a conventional manufacturing process of a reflective mask.

Referring to FIG. 25, first, in the step shown in FIG. 25A, a silicon (Si) substrate is used as a light absorbing member having a light absorbing property of absorbing light in the ultraviolet region such as X-rays. Prepare 302.

Next, in the step shown in FIG.
A multilayer film layer 303L such as a Mo / Si multilayer film layer, a Ru / B ₄ C multilayer film layer, or a NiCr / C multilayer film layer is uniformly formed on the surface 302a of the silicon (Si) substrate 302. Incidentally, an electron beam evaporation method, an ion beam sputtering method, an RF magnetron sputtering method, or the like is used for forming such a multilayer film layer 303L.

Next, in the step shown in FIG.
The resist layer 3 is formed on the surface 303La of the multilayer film layer 303L.
10 is formed with a uniform film thickness.

Next, in the step shown in FIG.
X-ray mask 31 having desired absorber pattern 311a
No. 1 is used, and the resist layer 31
0 is exposed. Note that this exposure step is also performed by the electron beam drawing method.

Next, in the step shown in FIG.
The resist layer 3 exposed in the step shown in FIG.
10 is developed to form a resist pattern 312 having an opening portion 312h having a desired shape.

Next, in the step shown in FIG.
Using the resist pattern 312 as a mask, the multilayer film layer 303L exposed through the opening portion 312h of the resist pattern 312 is covered with the surface 3 of the silicon (Si) substrate 302.
Etch until 02a is exposed.

In the step of etching the multilayer film layer 303L, anisotropic etching is usually used in terms of processing accuracy.

Next, in the step shown in FIG.
By removing the resist, the reflective mask 301 is obtained.

The reflective mask 301 manufactured by the above steps has a light-reflecting member 3 having a pattern of a desired shape.
The top surface 303a of No. 03 and the bottom surface 307 of the recess 305 formed by the substrate 302 having the light absorbing property are formed so as to be substantially parallel to each other. In the reflective mask 301, the top surface 303a of the light reflecting member 303,
That is, a light reflecting surface 303a that reflects the received light to a photosensitive member (not shown), and a bottom surface 307 of the concave portion 305, that is, a light shielding surface 307 that shields the received light from the photosensitive member (not shown). Are formed so as to be substantially parallel to each other.

The side wall 303S of the light reflecting member 303 forming the concave portion 305 is formed so as to be substantially orthogonal to the top surface 303a of the light reflecting member 303.

[0037]

However, in the conventional reflective mask, it is difficult to transfer a pattern having a desired shape provided on the reflective mask onto a photosensitive member such as a resist so as to have a sufficiently high contrast. There was a problem that was.

That is, there is some reflection even in the concave portion of the reflection type mask, and the light reflected by the concave portion reaches the photosensitive member such as a resist, and the portion of the light shielding member that should originally be shielded is exposed. There is a problem that the contrast of a pattern transferred to a photosensitive member such as a resist is lowered.

More specifically, referring to FIG. 24 again, as described above, in the conventional reflective mask 301, it is formed by the top surface 303a of the light reflecting member 303 and the substrate 302 having light absorbing characteristics. Bottom surface 3 of the recess 305
07 are formed so as to be substantially parallel.

The side wall 303S of the light reflecting member 303 forming the concave portion 305 is formed so as to be substantially orthogonal to the surface of the light reflecting member 303.

Therefore, the parallel light in the ultraviolet region such as X-rays, which is applied to the reflective mask 301, is reflected by the light reflecting member 3.
03, the surface 303a is incident on the bottom surface 307 at the incident angle θ. The bottom surface 307 is incident on the surface 303a at the incident angle θ, or the side wall 30 formed of the light reflecting member 303.
For 3S, the incident angle is 90 ° −θ.
Although it depends on the shape of the concave portion 305, the light incident on the concave portion 305 is repeatedly reflected by the bottom surface 307 and the side wall 303S forming the concave portion 305, and then a certain amount of light is generated on the surface of the light reflecting member 303. As the light R _{e2 in the} emission direction parallel to the emission direction of the light beam reflected at 303a,
Is emitted.

Then, the surface 303 of the light reflecting member 303.
A certain amount of light R _e2 emitted in an emission direction parallel to the emission direction of the light reflected at a reaches a photosensitive member such as a resist and exposes a portion of the light shielding member that should be originally shielded. , Which causes a reduction in the contrast of a pattern transferred to a photosensitive member such as a resist.

Further, in the conventional reflection type mask 301, the concave portion 30 formed by the substrate 302 having the light absorbing property is used.
Since the bottom surface 307 forming 5 substantially only absorbs light in the ultraviolet region such as X-rays that has entered the concave portion 305, it cannot be said that the light is attenuated sufficiently in the concave portion 305. However, there is a problem that the contrast of a pattern transferred to a photosensitive member such as a resist is low.

Further, in the conventional reflective mask 301, the light reflecting member 303 and the substrate 302 having the light absorbing property are provided.
It has two configurations. Therefore, the recess 305
The bottom surface 307 formed of the substrate 302 having a light-absorbing property, which forms a layer, absorbs light in an ultraviolet region such as X-rays and is tinged with heat.

Therefore, the base material 30 having the light absorbing property
The reflective mask 301 is distorted due to the thermal expansion of No. 2 and the like, and the distortion of the reflective mask 301 distorts the pattern of the desired shape provided in the reflective mask. As a result, there is a problem that it is difficult to accurately transfer the pattern of the desired shape provided on the reflective mask 301 to a photosensitive member such as a resist.

The present invention has been made to solve the above problems, and a pattern of a desired shape provided on a reflective mask can be sharply applied to a photosensitive member such as a resist with a sufficiently high contrast. An object is to provide a reflective mask that can be transferred.

Another object of the present invention is to provide a reflective mask which can transfer a pattern of a desired shape provided on the reflective mask to a photosensitive member such as a resist with high accuracy.

[0048]

The present inventors have made diligent efforts to achieve the above-mentioned object, and as a result, if the side walls and bottom surface of the recess of the reflective mask are formed of a substrate having at least light absorbing characteristics. The inventors have found that a pattern of a desired shape provided on a reflective mask can be transferred onto a photosensitive member such as a resist so as to have a sufficiently high contrast, and have completed the present invention.

Further, the portion corresponding to the pattern of the desired shape of the reflective mask is formed with a convex portion, and the remaining portion is formed with a concave portion, and the top surface of the convex portion is constituted to have a light reflecting property. In addition, the top surface of the convex portion and the bottom surface of the concave portion are not parallel to each other, so that the pattern of the desired shape provided on the reflective mask has a sufficiently high contrast on the photosensitive member such as resist. The present inventors have completed the present invention by finding that they can be transcribed.

That is, the reflective mask according to the first invention is a reflective mask having a pattern of a desired shape, including a substrate on which a pattern of the desired shape is formed, and a portion corresponding to the pattern of the desired shape is convex. Forming a portion, and the remaining portion forming a concave portion, the top surface of the convex portion has a light-reflecting characteristic, and the side wall and the bottom surface of the concave portion have at least a light-absorbing characteristic.

In the reflective mask according to the first aspect of the present invention, it is preferable that the bottom surface of the recess is not parallel to the top surface of the projection.

The reflective mask according to the second invention is
A reflective mask having a pattern of a desired shape, including a substrate on which a pattern of a desired shape is formed, a portion corresponding to the pattern of the desired shape forms a convex portion, and a remaining portion forms a concave portion The top surface of the section has a light-reflecting property, and the surface of the recess is not parallel to the top surface of the projection.

Further, the present inventor constructed both the top surface of the convex portion and the surface forming the concave portion of the reflective mask by a member having a high reflectance for light in the ultraviolet region such as X-rays. Also, if the top surface of the convex portion and the surface forming the concave portion are not parallel to each other, the problem of the distortion of the reflective mask described above is solved, and as a result, the pattern of the desired shape provided on the reflective mask is solved. The present invention has been completed on the finding that it can be transferred onto a photosensitive member such as a resist with high accuracy and with sufficiently strong contrast.

That is, a reflective mask according to the third invention is a reflective mask having a pattern of a desired shape, including a substrate on which a pattern of the desired shape is formed, and a portion corresponding to the pattern of the desired shape is convex. Forming a portion, the remaining portion forms a concave portion, the surface forming the concave portion has a surface that is not parallel to the top surface of the convex portion, the surface of the convex portion and the concave portion,
Both have light reflective properties.

The reflective mask according to the fourth invention is
A reflective mask for transferring a pattern of a desired shape onto a photosensitive member, which is provided for forming a pattern of the desired shape to be transferred onto the photosensitive member, and a light reflection surface for reflecting the received light on the photosensitive member, and a receiving surface. And a light-shielding surface that shields the exposed light from the photosensitive member, and the light-reflecting surface and the light-shielding surface are not parallel.

The light shielding surface may be formed of a light reflecting member or a light absorbing member.

[0057]

In the reflective mask according to the first aspect of the present invention, the side wall and the bottom surface of the recess have at least light absorbing characteristics.

Therefore, as compared with the conventional reflective mask in which only the bottom surface of the recess has substantially the light absorbing property, the side wall of the recess can absorb the received light, so that the light in the recess can be absorbed. Absorption is improved.

As a result, the reflective mask according to the first aspect of the present invention has a pattern of a desired shape provided on the reflective mask.
It can be transferred to a photosensitive member such as a resist so as to have a sufficiently high contrast as compared with a conventional reflective mask.

Further, in the first invention, when the bottom surface of the concave portion is not parallel to the top surface of the convex portion, the light incident parallel to the top surface of the convex portion and the bottom surface of the concave portion is incident on the bottom surface of the concave portion. The emission direction of the light beam reflected on the top surface of the convex portion can be changed to a different emission direction.

Therefore, it is possible to reduce the amount of reflected light reaching the photosensitive member such as the resist in the concave portion.

As a result, the pattern of the desired shape provided on the reflective mask can be transferred onto the photosensitive member such as a resist so as to have a sufficiently higher contrast than that of the conventional reflective mask.

The reflective mask according to the second invention is
The surface of the recess is not parallel to the top surface of the protrusion.

In the second invention, light incident parallel to the top surface of the convex portion and the surface of the concave portion is
The emission direction of the light reflected on the top surface of the convex portion can be changed to a different emission direction.

Therefore, of the light reflected in the recess,
The amount of light reaching a photosensitive member such as a resist can be reduced.

As a result, in the reflective mask according to the second invention, the pattern of the desired shape provided on the reflective mask is formed on the photosensitive member such as resist as compared with the conventional reflective mask.
It can be transferred so as to have a sufficiently high contrast.

In the reflective mask according to the third invention, the surface forming the concave portion has a surface which is not parallel to the top surface of the convex portion,
Both the surface of the convex portion and the surface of the concave portion have a light reflecting property.

In the third invention, the surface forming the recess has a surface which is not parallel to the top surface of the projection, and as a result, the light is incident parallel to the top surface of the projection and the surface of the surface forming the recess. The light can be changed to an emitting direction different from the emitting direction of the light reflected on the top surface of the convex on the surface forming the concave.

By appropriately selecting the angle between the surface of the concave portion and the top surface of the convex portion, the light reflected on the surface of the concave portion is adjusted so as not to reach the photosensitive member such as resist. Alternatively, the light reflected by the surface of the surface forming the recess can be guided to a portion such as a resist that does not affect the pattern transferred to the photosensitive member.

As described above, by adjusting the angle between the surface forming the concave portion and the top surface of the convex portion, even if the surface of the surface forming the concave portion has a light reflecting property, the surface of the concave portion is formed. The light reflected by does not reach the photosensitive member such as the resist or is guided to a portion that does not affect the pattern to be transferred. A non-reflecting portion (light shielding portion) is formed.

The surface of the concave portion, which is the apparent non-reflecting portion (light-shielding portion), has a light-reflecting property of reflecting light in the ultraviolet region such as X-rays with a high reflectance.
The surface forming the concave portion hardly absorbs light in the ultraviolet region such as X-rays and reflects it, so that heat cannot be stored in this portion.

Therefore, the reflective mask is distorted due to the thermal expansion of the substrate having the light-absorbing characteristics as seen in the conventional reflective mask, and the distortion of the reflective mask causes the reflective type mask to distort. The problem of distortion of the pattern of the desired shape provided on the mask is reduced.

Therefore, in the reflection type mask according to the third invention, the pattern of the desired shape provided on the reflection type mask can be applied to a photosensitive member such as a resist with high accuracy and sufficiently more than a conventional reflection type mask. It can be transferred so as to have a high contrast.

In the reflective mask according to the fourth aspect of the present invention, the light reflecting surface and the light shielding surface are not parallel to each other. In the reflective mask according to the fourth aspect of the present invention, since the light reflecting surface and the light shielding surface are not parallel to each other, the light incident on the light reflecting surface and the light shielding surface in parallel is The emission direction of the light reflected by can be changed to a different emission direction.

Therefore, the amount of light reflected on the light-shielding surface reaching the photosensitive member such as a resist is reduced, or the light reflected on the light-shielding surface affects the pattern transferred to the photosensitive member such as a resist. You can lead to the part that does not exist.

[0076]

[Examples] Examples will be shown below.
Used only to illustrate the invention,
The present invention is in no way limited by the following examples.

Example 1 FIG. 1 is a sectional view schematically showing an example of a reflective mask according to the present invention.

With reference to FIG. 1, the reflective mask 1 is
For example, the figure shows a reflective mask used in an X-ray exposure apparatus or the like, which has a substrate 2 having a light-absorbing property of absorbing light in the ultraviolet region such as X-rays, and a top surface 2a of a convex portion of the substrate 2.
And a light-reflecting member 3 having a light-reflecting property which is formed on the upper surface and reflects light in the ultraviolet region such as X-rays.

As the material of the substrate 2, any material can be used as long as it has a light absorbing property of absorbing light in the ultraviolet region such as X-rays.
Although not particularly limited, for example, Al ₃ N ₄ ,
A ceramic material such as Pb (Ti _0.5 Zr _0.5 ) O ₃ can be used.

The light reflecting member 3 may be, for example, Mo / Si multilayer film, Ru / B ₄ C multilayer film, NiCr.
A multilayer film such as a / C multilayer film can be used.

By the way, in this reflective mask 1, the substrate 2 is formed with a pattern of a desired shape. The convex portion 4 is formed in the portion corresponding to the pattern of the desired shape.
In this embodiment, the convex portion 4 is composed of the substrate 2 and the light absorbing member 3.

The remaining portion forms the recess 5. The top surface 3a of the convex portion 4, that is, the top surface 3a of the light absorbing member has a light reflecting property.

The recess 5 has a side wall 5S and a bottom surface 7 formed of the substrate 2. The bottom surface 7 has a light absorbing property.

The side wall 5S of the recess 5 is formed of the substrate 2 having the light absorbing property and the side wall 3S formed of the light reflecting member 3 having the light reflecting property.
Including and

Referring to FIGS. 1 and 24, this reflective mask 1 is different from FIG. 24 in that it includes a side wall 2S formed of a substrate 2 having a light absorbing property as a side wall 5S of recess 5. It is particularly different from the conventional reflective mask 301 shown in FIG.

Therefore, only the bottom surface 307 of the concave portion 305 is formed by the substrate 2 having the light absorbing characteristic that forms the side wall 5S of the concave portion 5 as compared with the conventional reflective mask 301 having at least the light absorbing characteristic. Side wall 2S
Also in the above, the absorption of light in the recess 5 is improved by the amount that the light in the ultraviolet region such as the received X-ray can be absorbed.

Therefore, in the reflective mask 1 shown in the first embodiment, the pattern of the desired shape provided on the reflective mask 1 is applied to a photosensitive member (not shown) such as a resist as compared with the conventional reflective mask 301. And can be transferred so as to have a sufficiently high contrast.

Next, the operating principle of the reflective mask 1 will be described. Of the light R _i1, R _i2 in the ultraviolet range of the X-rays irradiated onto the reflective mask 1, the top surface 3a of the light reflecting member 3, i.e., the light R _i1 incident on the top surface 3a of the convex portion 4 is , The top surface 3a of the light reflecting member 3, that is,
The light is reflected by the top surface 3a of the convex portion 4 having a light-reflecting property and reaches a photosensitive member such as a resist.

On the other hand, of the lights R _i1 and R _i2 in the ultraviolet region such as X-rays which are applied to the reflective mask 1, the light R _{i2 which} is incident on the recess 5 is absorbed by the bottom surface 7 of the recess 5 or is recessed. 5 is absorbed by the side wall 5S, more specifically, the side wall 2S formed of the substrate 2 having the light-absorbing property that constitutes the side wall 5S of the recess 5, or scattered by the surface roughness of the bottom surface 7 of the recess 5. It decays.

Then, on the photosensitive member (not shown) such as a resist, the surface 3a of the light reflecting member 3, that is, the convex portion 4 is formed.
Light R reflected by the top surface 3a having the light reflecting property of
Due to the difference between the light amount of _{e1 and} the light amount of the light R _e2 attenuated in the concave portion 5, the pattern of the desired shape provided on the reflective mask is transferred.

Next, a method of manufacturing the reflective mask 1 will be described below with reference to the drawings.

2 to 3 are cross-sectional views schematically showing the manufacturing process of the reflective mask according to the present invention.

Referring to FIG. 2, first, in the step shown in FIG. 2A, the substrate 9 is provided on the surface 8a of the supporting member 8. The substrate 9 is not particularly limited to the following cases, but may be a silicon (Si) substrate or a silicon (S) substrate.
i) A substrate in which titanium (Ti), chromium (Cr), aluminum (Al), gold (Au) or the like is coated on the surface of the substrate to a film thickness of about 300Å can be preferably used. As the substrate 9, it is preferable to use one whose surface 9a is mirror-finished. Note that the support member 8 is not a particularly indispensable member (the same applies to the following examples).

Next, in a step shown in FIG. 2B, a resist layer 10 made of, for example, polymethyl methacrylate (PMMA) is typically formed on the surface 9a of the substrate 9 to have a desired thickness ( It is formed in several tens μm to several hundreds μm).

Next, in the step shown in FIG. 2C, the X-ray mask 11 having the desired absorber pattern 11a is used, and for example, light of a wavelength in the X-ray region of synchrotron radiation (SR light) ( Wavelength of about 0.3 nm to 1.0 nm),
The resist layer 10 is exposed.

Next, in the step shown in FIG. 2D, the resist layer 10 exposed in the step shown in FIG. 2C is developed to form a resist pattern 12 having an opening 12h having a desired shape.

Next, in the step shown in FIG. 3A, the substrate 9 having the resist pattern 12 is formed, for example, on Al.
Electrolytic solution (sol solution) 1 in which ceramic materials such as ₂ N ₄ and Pb (Ti _0.5 Zr _0.5 ) O ₃ are finely pulverized and dispersed.
Immerse in 3.

Then, the substrate 9 having the resist pattern 12 is used as a cathode, another electrode 14 is provided in the electrolytic solution 13, and this is used as an anode, and a predetermined voltage is applied between the anode and the cathode.

Referring to FIG. 3 (b), in the step, the opening 12h of the resist pattern 12 is buried,
A ceramic material 15 such as Al ₂ N ₄ or Pb (Ti _0.5 Zr _0.5 ) O ₃ is deposited.

Next, in the step shown in FIG. 3C, the support 8, the substrate 9 and the resist are removed, and thereafter,
By firing the deposited ceramic material 15,
The ceramic structure 2 having a pattern of a desired shape is obtained.

The steps shown in FIGS. 3 (a) to 3 (c)
Instead of using the resist pattern 12 as a template,
In this mold 12, Al₃N_Four, Pb (Ti_0.5Z
r_0.5) O ₃Finely crush ceramic materials such as
Pour mask base material such as slurry dispersed in solvent
And then solidify to obtain a ceramic structure
Good.

Next, in the step shown in FIG. 3D, the above-mentioned, for example, Mo / Si multilayer film, Ru / B ₄ C multilayer film or NiCr is formed on the top surface 2a of the convex portion of the ceramic structure 2. By depositing a light-reflecting member 3 having a light-reflecting property made of a multilayer film such as a / C multilayer film,
The reflective mask 1 is obtained.

A known selective epitaxial growth method can be used to selectively form the above-mentioned multilayer film on the top surface 2a of the convex portion of the ceramic structure (substrate) 2.

Further, as a method of forming a multilayer film on the top surface 2a of the convex portion of the ceramic structure (substrate) 2, the following method can be mentioned.

That is, as will be described later, first, the substrate 2
Surface 2c of the substrate 2, that is, the top surface 2a of the substrate 2,
The above-mentioned multilayer film is deposited so as to uniformly cover both the side wall 2S and the bottom surface 7. Then, a resist pattern is formed on the top surface 3a of the convex portion 4, and the multilayer film deposited on the side wall 2S and the bottom surface 7 of the substrate 2 is used as a mask, for example, by a known method such as plasma etching. Etching is performed by using the etching technique of. According to this step, the top surface 2 of the convex portion of the substrate 2 is
without impairing the reflectance of the surface of the multilayer film deposited on a
A multilayer film can be selectively formed on the top surface 2a of the convex portion of the substrate 2, and since the side wall 2S and the bottom surface 7 of the substrate 2 are exposed to, for example, plasma, the surface is appropriately roughened. As a result, due to the scattering of light on the side wall 3S and the bottom surface 7, it is possible to improve the contrast of the pattern transferred to the photosensitive member such as a resist.

In the reflective mask 1 manufactured by the above steps, the top surface 3a of the convex portion 4 of the reflective mask 1, that is, the top surface 3a of the light reflecting member 3 is approximately the same as the surface 9a of the substrate 9. It has a high smoothness of.

Further, in the reflection type mask 1 manufactured by the above steps, referring again to FIG. 2C, the resist layer 10 is formed on the surface 9a of the substrate 9 with a uniform film thickness, and The surface 9a of the substrate 9 is irradiated with synchrotron radiation light (SR light) in a direction perpendicular to the surface 9a.

As a result, as for the resist pattern 12 formed on the surface 9a of the substrate 9, referring again to FIG. 2D, the surface 12a of the resist pattern 12 is substantially parallel to the surface 9a of the substrate 9. The sidewall 12S of the resist pattern 12 is formed so as to be substantially orthogonal to the surface 9a of the substrate 9.

Therefore, in the reflective mask 1 formed according to the resist pattern 12, referring again to FIG. 1, the top surface 3a of the convex portion 4 of the reflective mask 1, that is, the top surface of the light-reflecting member 3. 3a and the bottom surface 7 forming the concave portion 5 are formed substantially parallel to each other.

Embodiment 2 FIG. 4 is a sectional view schematically showing an embodiment of a reflective mask according to the present invention.

Referring to FIG. 4, this reflection type mask 21
Indicates a reflective mask used in, for example, an X-ray exposure apparatus, and has a substrate 22 having a light-absorptive property of absorbing light in an ultraviolet region such as X-rays, and a top surface 22a of a convex portion of the substrate 22. And a light-reflecting member 23 having a light-reflecting property that is formed on the upper surface and reflects light in the ultraviolet region such as X-rays.

The material of the substrate 22 is the same as in Example 1.
Since the same material as that of the substrate 2 of the reflective mask 1 shown in can be used, its description is omitted here.

As the material of the light reflecting member 23,
Since the same material as the light absorbing member 3 of the reflective mask 1 shown in Example 1 can be used, the description thereof is omitted here.

By the way, referring to FIGS. 4 and 1, the reflective mask 21 has the same structure as the reflective mask 1 shown in FIG. 1 except for the following points.

That is, in the reflective mask 21, the substrate 2 of the reflective mask 1 shown in FIG. 1 is the substrate 22, the light-reflective member 3 is the light-reflective member 23, and the convex portion 4 having a pattern of a desired shape is provided. Convex portion 24 having a pattern of a desired shape
In addition, the recess 5 corresponds to the recess 25, respectively.

The top surface 23a of the convex portion 24, that is, the top surface 23a of the light reflecting member 23 has a light reflecting property.

Further, the recess 25 includes the side wall 25S and the substrate 2
And a bottom surface 27 formed of 2.

The bottom surface 27 has a light absorbing property. The side wall 25S of the recess 25 includes a side wall 22S formed of the substrate 22 having a light absorbing characteristic and a side wall 23S formed of a light reflecting member 23 having a light reflecting characteristic.

Therefore, the reflective mask 21 shown in FIG.
Has a configuration including the side wall 22S formed of the substrate 22 having the light absorbing property as the side wall 25S of the recess 25, and therefore, the same effect as that of the reflective mask 1 shown in FIG.

Referring to FIGS. 4 and 1, this reflective mask 21 has a bottom surface 27 forming a recess 25 and a top surface of the projection 24 of the reflective mask 21, that is, the surface of the light reflecting member 23. 23a is not parallel, that is,
It is particularly different from the reflective mask 1 shown in FIG. 1 in that it is configured to be inclined.

As described above, the reflective mask 21 shown in FIG. 4 has the top surface 23 of the convex portion 24 of the reflective mask 21.
a, that is, the top surface 23a of the light reflecting member 23,
The bottom surface 27 forming the recess 25 is not parallel. As a result, the top surface 23a of the convex portion 24, that is, the surface 23a of the light reflecting member 23 and the concave portion 25.
Light incident on the bottom surface 27 of the bottom surface 27 of the concave portion 25 at the top surface 23a of the convex portion 24, that is,
The emission direction of the light reflected on the top surface 23a of the light reflecting member 23 can be changed to a different emission direction.

Therefore, although it depends on the shape of the recess 25, the amount of light reflected by the bottom surface 27 of the recess 25 and reaching a photosensitive member (not shown) such as a resist can be reduced.

Therefore, in the reflection type mask 21 shown in the second embodiment, the pattern of a desired shape provided on the reflection type mask 21 is formed on a photosensitive member (not shown) such as a resist, and the reflection type mask shown in FIG. Compared with the mask 301 and the reflective mask 1 described in the first embodiment, the transfer can be performed so that the contrast is sufficiently higher.

Next, the operation principle of the reflective mask 21 will be described. Of the lights R _i1 and R _i2 in the ultraviolet region such as X-rays which are applied to the reflective mask 21, the light reflecting member 23
Of the light R _i1 incident on the surface 23a of the light reflecting member 23, that is, the top surface 23a of the convex portion 24, that is, the top surface 23 having the light reflecting property of the convex portion 24.
It is reflected by a and reaches a photosensitive member such as a resist.

On the other hand, of the lights R _i1 and R _i2 in the ultraviolet region such as X-rays which are applied to the reflective mask 21, the light R _{i2 which} has entered the recess 25 is absorbed by the bottom surface 27 of the recess 25 or Side wall 25S of 25, more specifically, mainly the recess 2
5 is absorbed by the side wall 22S formed of the substrate 22 having the light absorbing property, which constitutes the side wall 25S, and is scattered by the surface roughness of the bottom surface 27 of the recess 25. The emission direction of the light reflected on the top surface of the convex portion 24, that is, the surface 23a of the light-reflecting member 23 is changed to the emission direction of the light R _e2 different from that of the light, and is attenuated.

Then, on the photosensitive member (not shown) such as resist, the surface 23a of the light reflecting member 23, that is,
Due to the difference between the light amount of the light R _e1 reflected by the top surface 23a of the convex portion 24 having the light-reflecting property and the light amount of the light attenuated by the concave portion 25, a desired shape provided on the reflective mask 21 can be obtained. The pattern is transferred.

Next, a method of manufacturing the reflective mask 21 will be described below with reference to the drawings.

5 to 6 are sectional views schematically showing the manufacturing process of the reflective mask 21.

Referring to FIG. 5, first, in the step shown in FIG. 5A, the substrate 29 is placed on the surface 28a of the support 28.
To provide. As the substrate 29, it is preferable to use one whose surface 29a is mirror-finished.

Next, in a step shown in FIG. 5B, a resist layer 30 made of, for example, polymethylmethacrylate (PMMA) is typically formed on the surface 29a of the substrate 29 to have a desired thickness ( (Several 10 μm to several 100 μm)
To form uniformly.

Next, in the step shown in FIG. 5C, the resist layer 30 formed on the surface 29a of the substrate 29 is removed by
As shown in FIG. 5C, the surface 30 a of the resist layer 30.
Is polished so as to incline with respect to the surface 29a of the substrate 29, and the surface 29a of the substrate 29 is placed on the surface 29a of the substrate 29.
a resist layer 30 having a surface 30i inclined with respect to a
b is formed.

Next, using the X-ray mask 31 having the desired absorber pattern 31a, for example, light in the ultraviolet region such as X-rays of synchrotron radiation (SR light), more preferably 0.3 nm to 1 is used. The resist layer 30b is exposed with light having a wavelength of about 0.0 nm.

Next, in the step shown in FIG. 5D, the resist layer 30b exposed in the step shown in FIG.
Is developed to form a resist pattern 32 having an opening 32h having a desired shape.

Next, in the step shown in FIG. 6A, the substrate 29 having the resist pattern 32 is formed by, for example, A
Electrolytic solution (sol solution) in which ceramic materials such as l ₃ N ₄ and Pb (Ti _0.5 Zr _0.5 ) O ₃ are finely pulverized and dispersed.
Immerse in 33.

Then, the substrate 29 having the resist pattern 32 is used as a cathode, another electrode 34 is provided in the electrolytic solution 33, and this is used as an anode, and a predetermined voltage is applied between the anode and the cathode.

Referring to FIG. 6B, in this step, for example, Al ₃ N ₄ and Pb (Ti _0.5 Z) are filled so as to fill the opening 32h of the resist pattern 32.
A ceramic material 35 such as r _0.5 ) O ₃ is deposited.

Next, in a step shown in FIG. 6C, the support 28, the substrate 29 and the resist are removed, and thereafter, the deposited ceramic material 35 is fired, whereby a ceramic structure having a pattern of a desired shape is formed. A body (ceramics sintered body, that is, a substrate) 22 is obtained.

Next, in the step shown in FIG. 6D, the top surface 22a of the convex portion of the ceramic structure (substrate) 22 is formed.
By depositing the above-mentioned light absorbing member 23 made of a multilayer film such as a Mo / Si multilayer film, a Ru / B ₄ C multilayer film or a NiCr / C multilayer film, the reflective mask 21
To get

Since the step of selectively forming the above-mentioned multilayer film on the surface 22a of the convex portion of the ceramic structure (substrate) 22 is the same as that of the first embodiment, its explanation is omitted.

In the reflection type mask 21 manufactured by the above steps, the top surface of the convex portion 24 of the reflection type mask 21, that is ,. The surface 23a of the light-reflecting member 23 has the same high smoothness as the surface 29a of the substrate 29. Also, FIG.
Referring to (c) again, in the reflective mask 21 manufactured by the above process, after forming the resist layer 30 with a uniform film thickness on the surface 29 a of the substrate 29, the surface 30 a of the resist 30 is The surface 29a of the substrate 29 is polished to be inclined, and then the resist layer 30b having the surface 30i inclined to the surface 29a of the substrate 29 is synchronized in a direction orthogonal to the surface 29a of the substrate 29. Irradiating tron radiation (SR light).

As a result, as for the resist pattern 32 formed on the surface 29a of the substrate 29, referring again to FIG. 5D, the surface 32a of the resist pattern 32 is formed on the substrate 29a.
Is formed so as not to be substantially parallel to the surface 29a of the.
In this embodiment, the surface 32a of the resist pattern 32 is formed so as to be inclined.

Further, the sidewall 32S of the resist pattern 32 is formed.
Are formed so as to be substantially orthogonal to the surface 29a of the substrate 29.

Therefore, in the reflective mask 21 formed according to the resist pattern 32, referring again to FIG. 4, the top surface of the convex portion 24 of the reflective mask 21, that is, the top surface 23a of the reflective member 23 is formed. The bottom surface 27 forming the recess 25 is formed so as not to be substantially parallel to each other.

In this reflective mask 21, the top surface 23a of the convex portion 24, that is, the light reflecting surface 23a that reflects the received light to a photosensitive member (not shown) such as resist, and the received light such as resist. The side wall 25S forming the recess 25, which is a light shielding surface that shields the photosensitive member, and the bottom surface 27 are not substantially parallel.

More specifically, in this reflective mask 21, the bottom surface 27 forming the recess 25 of the reflective mask 21 is formed.
Are formed so as not to be substantially parallel to the bottom surface 22b of the substrate 22, and the top surface 23a of the convex portion 24, that is, the top surface 23a of the light absorbing member 23, is formed on the substrate 22.
Is formed so as to be substantially parallel to the bottom surface 22b.

Embodiment 3 FIG. 7 is a sectional view schematically showing an embodiment of a reflective mask according to the present invention.

Referring to FIG. 7, this reflective mask 41 is used.
Indicates a reflective mask used in, for example, an X-ray exposure apparatus, and has a substrate 42 having a light-absorptive characteristic of absorbing light in the ultraviolet region such as X-rays, and a top surface 42a of a convex portion of the substrate 42. And a light-reflecting member 43 having a light-reflecting property which is formed on the upper surface and reflects light in the ultraviolet region such as X-rays.

The material of the substrate 42 is the same as in the first embodiment.
Since the same material as that of the substrate 2 of the reflective mask 1 shown in can be used, its description is omitted here.

As the material of the light reflecting member 43,
Since the same material as the light absorbing member 3 of the reflective mask 1 shown in Example 1 can be used, the description thereof is omitted here.

By the way, referring to FIGS. 7 and 4, the reflective mask 41 has the same structure as the reflective mask 21 shown in FIG. 4 except for the following points.

That is, in the reflective mask 41, the substrate 22 of the reflective mask 21 shown in FIG. 4 is the substrate 42, the light-reflecting member 23 is the light-reflecting member 43, and the convex portion 24 having a desired pattern is provided. The concave portion 25 corresponds to the convex portion 44 having the pattern of the desired shape and the concave portion 45 corresponds to the concave portion 45.

The top surface 43a of the convex portion 44, that is, the top surface 43a of the light reflecting member 43 has a light reflecting property.

Further, the concave portion 45 includes the side wall 45s and the substrate 4
And a bottom surface 47 formed by 2.

The bottom surface 47 has a light absorbing property. Further, the side wall 45S of the recess 45 includes a side wall 42S formed of the substrate 42 having a light absorbing characteristic and a side wall 43S formed of the light reflecting member 43 having a light reflecting characteristic.

The reflective mask 41 has a recess 45.
And the bottom surface 47 of the reflective mask 41 and the top surface 43a of the convex portion 44 of the reflective mask 41, that is, the top surface 43a of the light reflecting member 43 are not parallel to each other.

In this reflection type mask 41, the top surface 43a of the convex portion 44, that is, the light reflecting surface 43a for reflecting the received light to a photosensitive member (not shown) such as a resist, and the received light for the resist or the like. The side wall 45S forming the recess 45, which is a light shielding surface that shields the photosensitive member, and the bottom surface 47 are not substantially parallel.

Therefore, the reflective mask 41 shown in FIG.
Includes a side wall 45S of the recess 45, which includes a side wall 42S formed of a substrate 42 having a light absorbing characteristic,
Since the top surface of the convex portion 44 of the reflective mask 41, that is, the surface 43a of the light-reflecting member 43 is not parallel, the same effect as the reflective mask 21 shown in FIG. 4 is obtained.

By the way, referring to FIGS. 7 and 4, in this reflection type mask 41, the concave portion 45 of the reflection type mask 41 is used.
The bottom surface 47 of the convex portion 44 is formed to be parallel to the bottom surface 42b of the substrate 42.
That is, it is particularly different from the reflective mask 21 shown in FIG. 4 in that the surface of the light absorbing member 43 is formed so as not to be substantially parallel to the bottom surface 42b of the substrate 42.

The reflective mask 21 and the reflective mask 41 can be selectively used depending on the configuration of the X-ray exposure apparatus, for example.

Since the operating principle of the reflective mask 41 is the same as that of the reflective mask 21 shown in FIG. 4, its explanation is omitted.

Next, a method of manufacturing the reflective mask 41 will be described below with reference to the drawings.

8 to 10 are sectional views schematically showing the manufacturing process of the reflective mask 41.

Referring to FIG. 8, first, in the step shown in FIG. 8A, a substrate 49 is provided on the surface 48a of the support 48, for example.

Next, in a step shown in FIG. 8B, a resist layer 50 made of, for example, polymethylmethacrylate (PMMA) is typically formed on the surface 49a of the substrate 49 to have a desired thickness ( It is formed in several tens μm to several hundreds μm).

Next, in the step shown in FIG. 8C, the resist layer 50 formed on the surface 49a of the substrate 49 is replaced with the surface 50a of the resist layer 50 as shown in FIG. 8C.
Is polished so as to be inclined with respect to the surface 49a of the substrate 49, and the surface 49a of the substrate 49 is
Resist layer 5 having surface 50i inclined with respect to a
0b is formed.

Next, using the X-ray mask 51 having the desired absorber pattern 51a, for example, light in the ultraviolet region such as X-rays of synchrotron radiation (SR light), more preferably 0.3 nm to 1 is used. The resist layer 50b is exposed with light having a wavelength of about 0.0 nm.

Next, in the step shown in FIG. 8D, the resist layer 50b exposed in the step shown in FIG. 8C.
Is developed to form a resist pattern 52 having an opening 52h having a desired shape.

Next, in the step shown in FIG. 9A, the substrate 49 having the resist pattern 52 is formed by, for example, A
Electrolytic solution (sol solution) in which ceramic materials such as l ₃ N ₄ and Pb (Ti _0.5 Zr _0.5 ) O ₃ are finely pulverized and dispersed.
Immerse in 53.

Then, using the substrate 49 having the resist pattern 52 as a cathode, another electrode 5 is placed in the electrolytic solution 53.
4 is provided, and this is used as an anode, and a predetermined voltage is applied between the anode and the cathode.

Referring to FIG. 9B, in this step, for example, Al ₃ N ₄ and Pb (Ti _0.5 Zr _0.5 ) are filled so as to fill the opening 52h of the resist pattern 52.
A ceramic material 55 such as O ₃ is deposited.

Next, in the step shown in FIG. 9C, the support 48, the substrate 49 and the resist are removed, and then the deposited ceramic material 55 is fired to obtain a ceramic having a pattern of a desired shape. A structure (ceramics sintered body) 56 is obtained.

Next, in the step shown in FIG.
Using the ceramic structure (ceramic sintered body) 56 as a mold, the mold 56 is filled with Al ₃ N ₄ , Pb (Ti _0.5 Zr).
_0.5 ) A ceramic material such as O ₃ is finely pulverized, and a mask base material 57 such as a slurry dispersed in a solvent is poured and solidified.

Next, in the step shown in FIG.
By removing the mold 56, the ceramic structure (substrate) 42 having a pattern of a desired shape is obtained.

Next, in the step shown in FIG.
Top surface 2a of the convex portion of the ceramic structure (substrate) 42
By depositing the light absorbing member 43 made of a multilayer film such as the Mo / Si multilayer film, the Ru / B ₄ C multilayer film or the NiCr / C multilayer film described above on the reflective mask 41,
To get

Since the step of selectively forming the above-mentioned multilayer film on the top surface 42a of the convex portion of the ceramic structure (substrate) 42 is the same as that of the first embodiment, its explanation is omitted.

In this embodiment, FIGS. 9A to 10 are used.
In the step shown in (c), the ceramic structure 56 is formed, the ceramic structure 56 is used as a mold, the mask base material 57 is poured into the mold 56 and solidified, and then the mold 56 is removed to remove the ceramic structure. Body (board)
Although the step of obtaining 42 is shown, the manufacturing method of the reflective mask 41 is not limited to the above manufacturing method.

For example, in the step shown in FIG. 9A, electroforming, electroplating, electroless plating, etc.
Forming a metal structure made of Ni, Ni / Co alloy, or the like,
The ceramic structure (substrate) 42 may be obtained by using this metal structure as a template.

Further, as the step of obtaining the ceramic structure (substrate) 42, the same steps as those shown in FIGS. 6A to 6C are used except that a mold made of a metal structure is used as a cathode. May be.

Embodiment 4 FIG. 11 is a sectional view schematically showing an embodiment of a reflective mask according to the present invention.

Referring to FIG. 11, this reflection type mask 61 is used.
Indicates a reflective mask used in, for example, an X-ray exposure apparatus, and is formed so as to uniformly cover the substrate 62 on which a pattern of a desired shape is formed and the entire surface 62c of the surface of the substrate 62. And a light-reflecting member 63 having a light-reflecting property of reflecting light in the ultraviolet region such as a line.

The material of the base material has a certain mechanical strength.
There is no particular limitation as long as it has
Consider, for example, the adhesiveness with the light-reflecting member 63 and the coefficient of thermal expansion.
It can be selected carefully. With the material of such a substrate
Then, for example, Al₃N _Four, Pb (Ti_0.5Zr
_0.5) O₃Ceramic materials such as Ni, Ni / Co
Examples thereof include metal materials such as alloys.

As the light reflecting member 63, for example, Mo / Si multilayer film, Ru / B ₄ C multilayer film NiCr /
A multilayer film such as a C multilayer film can be used.

By the way, in the reflective mask 61, a pattern of a desired shape is formed on the substrate 62.

The convex portion 64 is formed in the portion corresponding to the pattern of the desired shape. Then, the remaining portion is the recess 6
5 is formed.

The surface forming the concave portion 65, that is, the side wall 65S and the bottom surface 67 shown in this embodiment is not parallel to the top surface 63a of the convex portion 64, that is, the top surface 63a of the light reflecting member 63.

In this reflection type mask 61, the top surface 63a of the convex portion 64, that is, the light reflecting surface 63a for reflecting the received light to a photosensitive member (not shown) such as a resist, and the received light for the resist or the like. The side wall 65S forming the concave portion 65, which is a light shielding surface that shields light from the photosensitive member (not shown), and the bottom surface 67 are not parallel.

More specifically, the side wall 65S of the recess 65 is
It is formed so as to be orthogonal or substantially orthogonal to the top surface of the convex portion 64, that is, the top surface 63a of the light reflecting member 63. The bottom surface 67 of the concave portion 65 is formed so as to be inclined with respect to the top surface 63 a of the convex portion 64, that is, the top surface 63 a of the light reflecting member 63.

In this reflection type mask 61, the surface forming the concave portion 65 has a surface which is not parallel to the top surface 63a of the convex portion 64, and the surfaces of the convex portion 64 and the concave portion 65 are both in the ultraviolet region such as X-rays. It has the property of reflecting light.

More specifically, in the reflective mask 61, the side wall 65S and the bottom surface 67 forming the recess 65 are
The top surface 63a of the convex portion 64, that is, the light reflecting member 6
3 is not parallel to the top surface 63a, and the top surface 63a of the convex portion 64 and the side wall 65S and the bottom surface 67 of the concave portion 65 both reflect light in the ultraviolet region such as X-rays. And a light-reflecting member 63 having

Therefore, in this reflective mask 61,
The surface forming the concave portion 65 has a surface that is not parallel to the top surface 63a of the convex portion 64, and as a result, the top surface 6 of the convex portion 64 is formed.
3a and the light incident in parallel to the surface of the surface forming the concave portion 65 can be changed to a different emitting direction from the light emitted from the light reflected by the top surface 63a of the convex portion 64 on the surface forming the concave portion 65. .

More specifically, in the reflective mask 61, the side wall 65S and the bottom surface 67 forming the concave portion 65 are parallel to the top surface 63a of the convex portion 64, that is, the top surface 63a of the light reflecting member 63. As a result, the light incident on the top surface 63a of the convex portion 64, that is, the top surface 63a of the light-reflecting member 63 and the side wall 65S and / or the bottom surface 67 forming the concave portion 65 in parallel is prevented. The side wall 65S and / or the bottom surface 67 forming the concave portion 65 can change the emission direction of the light reflected by the top surface 63a of the convex portion 64, that is, the top surface 63a of the light reflecting member 63, to a different emission direction. it can.

Therefore, if the angle formed by the surface forming the concave portion 65 and the top surface 63a of the convex portion 64 is appropriately selected,
It can be adjusted so that the light reflected on the surface forming the concave portion 65 does not reach a photosensitive member (not shown) such as a resist.

Also, the convex portion 64 on the surface forming the concave portion 65
By appropriately selecting the angle formed with the top surface 63a of the above, the light reflected by the surface of the surface forming the concave portion 65 is guided to a portion other than the pattern transferred to the photosensitive member (not shown) such as a resist. Can be adjusted.

More specifically, the side wall 6 forming the concave portion 65
The concave portion 65 is formed by appropriately selecting the angle γ formed by 5S and the top surface 63a of the convex portion 64 and / or the angle δ formed by the bottom surface 67 forming the concave portion 65 and the top surface 63a of the convex portion 64. The light reflected by the side wall 65S and / or the bottom surface 67 is adjusted so as not to reach a photosensitive member (not shown) such as a resist, or influences the pattern transferred to the photosensitive member (not shown) such as a resist. It can be adjusted so as to lead to the part not given.

Even if the surface of the concave portion 65 has a light-reflecting property with respect to light in the ultraviolet region such as X-rays, the concave portion 6 has
The light reflected on the surface of 5 is adjusted so that it does not reach a photosensitive member (not shown) such as resist, or to a portion that does not affect the pattern transferred to the photosensitive member (not shown) such as resist. Since it is adjusted so as to guide it, the surface of the concave portion 65 forms an apparent non-reflecting portion (light-shielding portion) with respect to a photosensitive member (not shown) such as a resist.

Since the surface of the apparent non-reflecting portion (light-shielding portion) has a light-reflecting property of reflecting light in the ultraviolet region such as X-rays, it does not absorb the light and X Since light in the ultraviolet region such as lines is reflected with high reflectance, heat cannot be stored in this portion.

Therefore, the distortion of the reflective mask, which is caused by the thermal expansion of the substrate 302 having the light-absorbing property, which is seen in the conventional reflective mask 301, is remarkably reduced. The pattern of a desired shape provided on the mold mask 61 can be transferred to a photosensitive member (not shown) such as a resist with high accuracy.

Next, the operating principle of the reflective mask 61 will be described. Of the lights R _i1 and R _i2 in the ultraviolet region such as X-rays which are applied to the reflective mask 61, the light reflective member 63
Top surface 63a of the projection 64, that is, the top surface 63 of the protrusion 64.
The light R _i1 incident on a is reflected by the top surface 6 of the light reflecting member 63.
3a, that is, the top surface 63a of the convex portion 64 having the light-reflecting characteristic, is reflected and reaches a photosensitive member (not shown) such as a resist.

On the other hand, of the light in the ultraviolet region such as X-rays which is applied to the reflection type mask 61, the light is incident on the concave portion 65 or the light is projected by the surface forming the concave portion 65, that is, the side wall 65S and the bottom surface 67. The light incident on the top surface 63a of the portion 64 is changed to light R _e2 in a different direction from the reflected light emission direction, so that the light is reflected by the surface of the surface forming the recess 65, that is, the side wall 65S and the bottom surface 67. The generated light is adjusted so as not to reach a photosensitive member (not shown) such as a resist, or is guided to a portion that does not affect the pattern transferred to the photosensitive member (not shown) such as a resist.

Then, on a photosensitive member (not shown) such as a resist, the top surface 63a of the light reflecting member 63, that is, the top surface 63a of the convex portion 64 having the light reflecting property.
The amount of light R _e1 reflected by the surface of the concave portion 65,
That is, the amount of light attenuated by being reflected by the side wall 65S or the bottom surface 67 to a portion other than the photosensitive member such as a resist, or reflected to a portion that does not affect the pattern transferred to the photosensitive member such as a resist. The desired pattern provided on the reflection-type mask 61 is transferred to the photosensitive member such as a resist due to the difference.

Next, a method of manufacturing this reflective mask will be described below with reference to the drawings.

12 to 13 are sectional views schematically showing a manufacturing process of the reflective mask 61.

With reference to FIGS. 12 to 13 and FIGS. 5 to 6, the method of manufacturing the reflective mask 61 is the same as that of the reflective mask 21 shown in FIGS. 5 to 6 except for the following points. The same reference numerals are given to the corresponding members, and the description thereof will be omitted.

In the method of manufacturing the reflective mask 61, the process shown in FIG.
13A to 13C, even if the ceramic structure 32 is formed as the substrate 62 in the same manner as in the method of manufacturing the reflective mask 21, by electroforming or electroplating. The reflective mask 2 has the advantage that a metal structure such as Ni or Ni / Co alloy may be formed.
1 is different from the manufacturing method of 1.

When a metal structure is formed as the substrate 62, nickel (Ni) ions or nickel (Ni) ions are used in place of the electrolytic solution (sol solution) 33 in the step shown in FIG. And a solution containing metal ions such as cobalt (Co) ions may be used. Then, by a process similar to the process shown in FIG. 13A, Ni, Ni are filled so as to fill the opening 32h of the resist pattern 32.
After depositing a metal such as / Co alloy, the support 28, the substrate 29 and the resist are removed to obtain a metal structure (substrate) 62 having a pattern of a desired shape.

In the step shown in FIG. 13D,
Substrate 62 made of ceramic structure or metal structure
M so as to uniformly cover the entire surface 62c of the
In terms of obtaining the reflection type 61 by forming the light reflective member 63 made of a multilayer film such as an o / Si multilayer film, a Ru / B ₄ C multilayer film, and a NiCr / C multilayer film, Different from the manufacturing method.

For forming such a multilayer film, an electron beam evaporation method, an ion beam sputtering method, an RF magnetron sputtering method or the like can be used.

Referring to FIG. 11 again, in the reflective mask 61 manufactured by the above steps, the bottom surface 67 forming the concave portion 65 of the reflective mask 61 is substantially the same as the bottom surface 62b of the substrate 62. , The protrusions 6 are formed so as not to be parallel to each other.
The top surface 63a of No. 4, that is, the top surface 63a of the light reflecting member 63 is formed so as to be substantially parallel to the bottom surface 62b of the substrate 62.

Embodiment 5 FIG. 14 is a sectional view schematically showing an embodiment of a reflective mask according to the present invention.

Referring to FIG. 14, this reflective mask 81 is used.
Indicates a reflective mask used in, for example, an X-ray exposure apparatus, which is formed so as to uniformly cover the substrate 82 on which a pattern of a desired shape is formed and the entire surface 82c of the surface of the substrate 82. A light-reflecting member 83 having a light-reflecting property of reflecting light in the ultraviolet region such as a line.

The material of the substrate 82 is the same as in Example 4.
Since the same material as the material of the substrate 62 of the reflection type mask 61 shown in can be used, the description thereof is omitted here.

The material of the light reflecting member 83 is
Since the same material as the light-reflecting member 63 of the reflective mask 61 shown in Embodiment 4 can be used, the description thereof is omitted here.

By the way, referring to FIGS. 14 and 11, this reflective mask 81 is similar to that shown in FIG.
The structure is similar to that of the reflective mask 61 shown in FIG.

That is, in the reflective mask 81, the substrate 62 of the reflective mask 61 shown in FIG.
The light-reflecting member 63 corresponds to the light-reflecting member 83, the convex portion 64 having the pattern of the desired shape corresponds to the convex portion 84 having the pattern of the desired shape, and the concave portion 65 corresponds to the concave portion 85.

The surface forming the recess 65, that is, the side wall 85S and the bottom surface 87 shown in this embodiment, is
Both of them have the light reflectivity characteristic similarly to the reflective mask 61 shown in FIG.

The surface forming the concave portion 85, that is,
The side wall 85S and the bottom surface 87 shown in this embodiment are configured not to be parallel to the top surface 83a of the convex portion 84, that is, the top surface 83a of the light reflecting member 83.

In this reflective mask 81, the top surface 83a of the convex portion 84, that is, the light reflecting surface 83a that reflects the received light to a photosensitive member (not shown) such as resist, and the received light such as resist. A side wall 85S forming a recess 85, which is a light-shielding surface that shields light from a photosensitive member (not shown);
The bottom surface 87 is not parallel.

Therefore, the reflective mask 8 shown in FIG.
1 is a structure in which the surfaces of the convex portion 84 and the concave portion 85 both have light-reflecting characteristics, and the surface forming the concave portion 85,
That is, since the side wall 85S and the bottom surface 87 are not parallel to the top surface 83a of the convex portion 84, that is, the top surface 83a of the light reflecting member 83, FIG.
The same effect as the reflective mask 61 shown in FIG.

By the way, with reference to FIGS. 14 and 11, in this reflective mask 81, the bottom surface 87 forming the concave portion 85 of the reflective mask 81 is made parallel to the bottom surface 82b of the substrate 82. The top surface 83a of the convex portion 84, that is, the top surface 83 of the light reflecting member 83 is formed.
This is particularly different from the reflective mask 61 shown in FIG. 11 in that a is formed so as not to be parallel to the bottom surface 82b of the substrate 82.

The reflective mask 61 and the reflective mask 81 can be selectively used depending on the configuration of the X-ray exposure apparatus, for example.

Since the operating principle of the reflective mask 81 is the same as that of the reflective mask 61 shown in FIG. 11, its explanation is omitted.

Next, a method for manufacturing the reflective mask 81 will be described below with reference to the drawings.

15 to 17 are sectional views schematically showing a manufacturing process of the reflective mask 81.

Referring to FIGS. 15 to 17 and FIGS. 8 to 10, the method of manufacturing reflective mask 81 is the same as the method of manufacturing reflective mask 41 shown in FIGS. 8 to 10 except for the following points. Therefore, the corresponding members will be denoted by the corresponding reference numerals, and the description thereof will be omitted.

In the method of manufacturing the reflective mask 81, the process shown in FIG.
In the step shown in (b), similar to the method of manufacturing the reflective mask 41, Al ₃ N ₄ and Pb (Ti _0.5 ) are formed using the ceramic structure (ceramic sintered body) 56 as a mold.
Even if a ceramics material such as Zr _0.5 ) O ₃ is finely pulverized and a mask base material such as a slurry dispersed in a solvent is poured and solidified, electroplating, electroplating, or the like is used to form Ni, Ni / Ni / Ni This is different from the method of manufacturing the reflective mask 41 in that a metal structure such as a Co alloy may be formed.

In the step shown in FIG. 17C,
Substrate 82 made of ceramic structure or metal structure
M so that the entire surface 82c of the
In the point that the reflective mask 81 is obtained by forming the light reflective member 83 made of a multilayer film such as an o / Si multilayer film, a Ru / B ₄ C multilayer film, a NiCr / C multilayer film,
This is different from the manufacturing method of the reflective mask 41.

For forming such a multilayer film, an electron beam evaporation method, an ion beam sputtering method, an RF magnetron sputtering method or the like can be used.

Embodiment 6 FIG. 18 is a diagram schematically showing an embodiment of a reflective mask according to the present invention.

Referring to FIG. 18, FIG. 18A is a perspective view schematically showing the entire structure of a reflective mask used in, for example, an X-ray exposure apparatus, and FIG. XVIII-XVII of the reflective mask shown in FIG.
It is a schematic sectional drawing which follows the I line.

Referring to FIGS. 18A and 18B, the reflective mask 101 includes a substrate 102 on which a pattern having a desired shape is formed and the entire surface 10 of the substrate 102.
2c, which is formed so as to uniformly cover 2c and has a light-reflecting property of reflecting light in the ultraviolet region such as X-rays.
Including 3 and.

As the material of the substrate 102, the same material as the material of the substrate 62 of the reflection type mask 61 shown in the fourth embodiment can be used, and therefore the description thereof is omitted here.

As the material of the light reflecting member 103, the light reflecting member 6 of the reflection type mask 61 shown in the fourth embodiment is used.
Since the same thing as 2 can be used, the description here is omitted.

By the way, referring to FIGS. 18B and 11, the reflective mask 101 has the same structure as the reflective mask 61 shown in FIG. 11 except for the following points.

That is, in the reflective mask 101,
The substrate 62 of the reflective mask 61 shown in FIG.
In addition, the light-reflecting member 63 corresponds to the light-reflecting member 103, the convex portion 64 having the pattern of the desired shape corresponds to the convex portion 104 having the pattern of the desired shape, and the concave portion 65 corresponds to the concave portion 105.

The surface forming the concave portion 105, that is, the side wall 105S shown in this embodiment, has a light reflecting property, like the reflective mask 61 shown in FIG.

Further, the surface forming the concave portion 105, that is, the side wall 105S shown in the present embodiment is configured so as not to be parallel to the top surface 103a of the convex portion 104, that is, the top surface 103a of the light reflecting member 103. ing.

In this reflective mask 101, the convex portion 104
Top surface 103a, that is, a light reflection surface 103a that reflects received light to a photosensitive member (not shown) such as a resist.
And the side wall 105S forming the recess 105, which is a light shielding surface that shields the received light with respect to a photosensitive member (not shown) such as a resist, is not parallel.

Therefore, the reflective mask 1 shown in FIG.
No. 01 has a configuration in which the surfaces of the convex portion 104 and the concave portion 105 both have a light-reflecting characteristic, and the surface forming the concave portion 105, that is, the side wall 105S is the top surface 103a of the convex portion 104, that is, the light-reflecting property. Since the top surface 103a of the member 103 is not parallel to the top surface 103a, the same effect as that of the reflective mask 61 shown in FIG. 11 is obtained.

By the way, referring to FIGS. 18 and 11, in this reflection type mask 101, the reflection type mask 101 is used.
The cross section of the convex portion 104 having the pattern of the desired shape that constitutes the flat surface is composed of the flat top surface 103a and the inclined side wall 105S.
It differs from the reflective mask shown in FIG. 11 in that it is formed into a V-groove shape or a roughly V-groove shape by 5S and 105S.

Next, a method of manufacturing the reflective mask 101 will be described below with reference to the drawings.

19 to 21 are sectional views schematically showing the manufacturing process of the reflective mask 101.

Referring to FIG. 19, first, in the step shown in FIG. 19A, on the surface 108a of the support 108,
A substrate 109 is provided. As the substrate 109, it is preferable to use a substrate whose surface 109a is mirror-finished.

Next, in the step shown in FIG.
On the surface 109a of the substrate 109, for example, a resist layer 110 typically made of polymethylmethacrylate (PMMA) is formed to a desired thickness (several tens of μm to several tens).
0 μm).

Next, in the step shown in FIG.
By using the X-ray mask 111 having the absorber 111a having a desired shape, for example, X of synchrotron radiation light (SR light) is used.
Light in the ultraviolet region such as lines, more preferably 0.3 nm to
The resist layer 110 is exposed with light having a wavelength of about 1.0 nm.

In this step, first, the resist layer 11
A substrate 109 having 0 and / or a support 108,
X-ray mask 111 and a holder (not shown)
Distance L ₁₀₀ between line mask 111 and resist layer 110
Is fixed at a constant distance, for example, about several tens of μm.

Incidentally, referring to FIG. 19C, the absorber 111a of the X-ray mask 111 has a slit-shaped opening 11a.
The total absorber layer 111 having 1h and made of, for example, gold (Au) is provided on each of the end portions of the absorber 110a.
c is provided.

The total absorber layer 111c is provided on each of the end portions of the absorber 111a by setting the X-ray mask 111 on the surface 12 perpendicular to the synchrotron radiation (SR light).
0, the substrate 109 on which the resist layer 111 is formed
And / or with the support 108 an absorber pattern 110 produced by tilting in a direction at an angle
This is to avoid thinning of the apparent end of the absorber pattern 110a with respect to synchrotron radiation (SR light) at the end of a.

Next, the substrate 1 on which the X-ray mask 111 and the resist layer 110 are formed at an angle α with respect to the surface 120 perpendicular to the synchrotron radiation (SR light).
09 and / or the support 108 is tilted, and the first exposure step of selectively exposing the resist layer 110 with the synchrotron radiation (SR light) using the X-ray mask 111 is performed.

Next, in the step shown in FIG.
An angle β of the substrate 109 and / or the support 108 having the resist layer 110 exposed by the first exposure step shown in FIG. 19C with respect to the plane 120 perpendicular to the synchrotron radiation (SR light). Only, the substrate 109 on which the X-ray mask 111 and the resist layer 110 are formed, and / or
Alternatively, a second exposure step is performed in which the support 108 is tilted and the resist layer 110 is selectively exposed using synchrotron radiation (SR light) using the X-ray mask 110.

Next, in the step shown in FIG.
Resist layer 1 exposed by the first and second exposure steps
When 10 is developed, a resist pattern 112 having an opening 112h is formed on the substrate 109. According to this embodiment, the opening 11 of the resist pattern 112 is formed.
2h has an inclined side wall 112S, and through the opening 112h of the resist pattern 112, the surface 109 of the substrate.
a is formed so as to be exposed by the absorber pattern of the X-ray mask 111.

Next, in the step shown in FIG.
The substrate 109 having the resist pattern 112 is immersed in an electrolytic solution (sol solution) 113 in which a ceramic material such as Al ₃ N ₄ or Pb (Ti _0.5 Zr _0.5 ) O ₃ is finely pulverized and dispersed.

Then, the substrate 109 having the resist pattern 112 is used as a cathode, another electrode 114 is provided in the electrolytic solution 113, and this is used as an anode, and a voltage is applied between the anode and the cathode.

Referring to FIG. 21B, in this step, for example, Al ₃ N ₄ and Pb (Ti _0.5 Zr) are filled so as to fill the opening 112h of the resist pattern 112.
_0.5 ) A ceramic material 115 such as O ₃ is deposited.

Next, in the step shown in FIG.
The substrate 109, the resist and / or the support 108 are removed, and then the deposited ceramic material 115 is fired to obtain a ceramic structure (ceramic sintered body, ie, substrate) 102 having a pattern of a desired shape. To be

Next, in the step shown in FIG.
The entire surface 1 of the substrate 102 made of a ceramic structure
By forming the above-mentioned light-reflecting member 103 made of a multilayer film such as a Mo / Si multilayer film, a Ru / B ₄ C multilayer film, or a NiCr / C multilayer film so as to uniformly cover 02c,
The reflective mask 101 is obtained.

In this embodiment, referring again to FIG. 20B, the opening 112 having the inclined side wall 112S.
In the step of forming the resist pattern 112 having h, after forming the resist layer 110 on the substrate 109,
The substrate 109 on which the resist layer 110 is formed is tilted at an angle α in a certain direction with respect to the surface 120 perpendicular to the synchrotron radiation (SR light), and the resist layer 110 has a sidewall on one side of the opening 112h. The substrate 1 having the resist layer 110 which is exposed by the first exposure step after performing the first exposure step of selectively exposing the portion corresponding to
09 is a plane 1 perpendicular to the synchrotron radiation (SR light)
Second exposure step of selectively exposing a portion of the resist layer 110 exposed by the first exposure step at an angle β with respect to 20 in a certain direction to the side wall on the other side of the opening 121h. The step of developing the resist layer 110 exposed by the first and second exposure steps has been described.
The process of forming the resist pattern 112 having the opening 112h having 2S is not limited to the above process.

For example, as such a method, the substrate 1
After forming the resist layer 110 on 09, the resist layer 110 is exposed using synchrotron radiation (SR light) through an X-ray mask provided with an absorber having inclined side surfaces, and thereafter, The exposed resist layer 110 may be developed to form a resist pattern including openings having inclined side surfaces corresponding to the inclined side surfaces of the absorber of the X-ray mask.

The above-mentioned disclosures regarding Examples 1 to 6 are merely specific examples of the present invention, and do not limit the technical scope of the present invention.

Needless to say, various modifications are possible in the present invention. FIG. 22 is a sectional view schematically showing an embodiment of such a reflective mask according to the present invention as such a modification.

Referring to FIG. 22, the reflection type mask 121 shown in FIG. 22A is formed so as to uniformly cover the substrate 122 on which a pattern having a desired shape is formed and the entire surface 122c of the surface of the substrate 122. And a light-reflecting member 123 having a light-reflecting property of reflecting light in the ultraviolet region such as X-rays.

The portions corresponding to the pattern of the desired shape form the convex portions 124, and the remaining portions form the concave portions 125.

The surface forming the concave portion 125, that is, each of the sidewalls 125S ₁ and 125S ₂ forming the concave portion 125 is not parallel to the top surface 123a of the convex portion 124.

The surfaces of the convex portion 124 and the concave portion 125 both have a light reflecting property.

In this reflective mask 121, the convex portion 124
The top surface 123a of the above forms a light reflecting surface that reflects the received light to a photosensitive member (not shown) such as a resist.

Also, the side wall 125 forming the recess 125
S ₁ and 125 S ₂ form a light shielding surface that shields the received light from a photosensitive member (not shown) such as a resist.

In this reflective mask 121, the recess 125 is formed.
The side wall 125S ₂ on one side that forms the surface is substantially orthogonal to the top surface 123a of the protrusion 124.
It is different from the reflective mask 101 shown in FIG.

Such a reflection type mask 121 is shown in FIG.
In the step shown in (c), the first exposure step is performed with α = 0 °, and in the step shown in FIG.
perform the second exposure step with β <90 °, or
In the step shown in FIG. 19C, the first exposure step is performed with 0 <α <90 °, and in the step shown in FIG. 20A, the second exposure step is performed with β = 0 °. It can be manufactured by the same steps as in Example 6 except that the above steps are used.

Further, with reference to FIG. 22B, the reflective mask 141 is formed so as to uniformly cover the substrate 142 on which a pattern having a desired shape is formed and the entire surface 142c of the surface of the substrate 142. , A light-reflecting member 143 having a light-reflecting property of reflecting light in the ultraviolet region such as X-rays.

This reflection type mask 141 is provided for forming a pattern of a desired shape to be transferred to a photosensitive member (not shown) such as a resist, and the received light is a photosensitive member (not shown) such as a resist. ) And a light-shielding surface 143b that shields the received light from a photosensitive member (not shown) such as a resist.

Then, the light reflecting surface 143a and the light shielding surface 14
As is clear from FIG. 22 (b), 3b is not parallel.

Since this reflective mask 141 can be manufactured by the same method as that of the sixth embodiment, its explanation is omitted.

[0272]

As described in detail above, in the reflective mask according to the first aspect of the present invention, the sidewalls and the bottom surface of the recess have at least light absorbing properties, and as a result, only the bottom surface of the recess is
It is possible to transfer a pattern of a desired shape provided on the reflective mask to a photosensitive member such as a resist with high contrast and sharply as compared with a conventional reflective mask having at least a light absorbing property.

The reflective mask according to the second invention has a structure in which the surface of the concave portion is not parallel to the top surface of the convex portion. As a result, the reflective mask according to the second invention is the reflective mask according to the second invention. It is possible to change the light incident in parallel with the direction of emission on the surface of the concave portion, which is different from the emission direction of the light reflected on the top surface of the convex portion. As a result, compared with a conventional reflective mask in which the bottom surface of the concave portion and the top surface having the light-reflecting property of the convex portion are parallel to each other, a pattern having a desired shape can be formed on a photosensitive member such as a resist with high precision and high accuracy. It is possible to transfer as a sharp pattern having a contrast.

The reflection type mask according to the third invention is
The surface forming the concave portion has a surface that is not parallel to the top surface of the convex portion, and the surfaces of the convex portion and the concave portion both have a light reflecting property. The reflective mask according to the third invention has a structure in which the surface forming the concave portion is not parallel to the top surface of the convex portion, and therefore, the same effect as the second invention is achieved.

Further, as compared with the conventional reflective mask having a non-reflective surface (light absorbing surface) that absorbs received light, the reflective mask according to the third aspect of the present invention significantly reduces distortion of the reflective mask.

As a result, the reflective mask according to the third aspect of the invention has a pattern of a desired shape provided on the reflective mask.
It can be transferred to a photosensitive member such as a resist with high accuracy.

The reflection type mask according to the fourth invention is
As a result of having a configuration in which the light reflecting surface and the light shielding surface are not parallel, the same effect as the second or third invention is obtained.

[Brief description of drawings]

FIG. 1 is a cross-sectional view schematically showing an embodiment of a reflective mask according to the present invention.

FIG. 2 is a cross sectional view schematically showing a manufacturing process of a reflective mask according to the present invention.

FIG. 3 is a cross-sectional view schematically showing a manufacturing process of a reflective mask according to the present invention.

FIG. 4 is a sectional view schematically showing an embodiment of a reflective mask according to the present invention.

FIG. 5 is a cross sectional view schematically showing a manufacturing process of the reflective mask according to the present invention.

FIG. 6 is a cross-sectional view schematically showing a manufacturing process of the reflective mask according to the present invention.

FIG. 7 is a sectional view schematically showing an embodiment of a reflective mask according to the present invention.

FIG. 8 is a cross sectional view schematically showing a manufacturing process of a reflective mask according to the present invention.

FIG. 9 is a cross-sectional view schematically showing a manufacturing process of the reflective mask according to the present invention.

FIG. 10 is a cross sectional view schematically showing a manufacturing process of the reflective mask according to the present invention.

FIG. 11 is a cross-sectional view schematically showing an embodiment of a reflective mask according to the present invention.

FIG. 12 is a cross sectional view schematically showing a manufacturing process of the reflective mask according to the present invention.

FIG. 13 is a cross-sectional view schematically showing the manufacturing process of the reflective mask according to the present invention.

FIG. 14 is a cross-sectional view schematically showing an embodiment of a reflective mask according to the present invention.

FIG. 15 is a cross sectional view schematically showing a manufacturing process of the reflective mask according to the present invention.

FIG. 16 is a cross sectional view schematically showing a manufacturing process of the reflective mask according to the present invention.

FIG. 17 is a cross sectional view schematically showing a manufacturing process of the reflective mask according to the present invention.

FIG. 18 is a diagram schematically showing an embodiment of a reflective mask according to the present invention.

FIG. 19 is a cross sectional view schematically showing a manufacturing process of the reflective mask according to the present invention.

FIG. 20 is a cross sectional view schematically showing a manufacturing process of the reflective mask according to the present invention.

FIG. 21 is a cross sectional view schematically showing a manufacturing process of the reflective mask according to the present invention.

FIG. 22 is a sectional view schematically showing another embodiment of a reflective mask according to the present invention.

FIG. 23 is a configuration diagram schematically showing an example of a conventional X-ray reduction exposure apparatus.

FIG. 24 is a sectional view schematically showing a conventional reflective mask.

FIG. 25 is a cross sectional view schematically showing a manufacturing process of a conventional reflective mask.

FIG. 26 is a cross sectional view schematically showing a manufacturing process of a conventional reflective mask.

[Explanation of symbols]

 1 Reflective Mask 2 Substrate 2S, 3S, 5S Side Wall 3 Light Reflecting Member 3a Top Surface of Projection (Top Surface of Light Reflecting Member) 4 Projection 5 Recess 7 Bottom

Claims (5)

[Claims] 1. A reflective mask having a pattern of a desired shape, comprising a substrate on which the pattern of the desired shape is formed, wherein a portion corresponding to the pattern of the desired shape forms a convex portion, and a remaining portion. Forms a concave portion, the top surface of the convex portion has a light reflecting characteristic, and the side wall and the bottom surface of the concave portion have at least a light absorbing characteristic. 2. The reflective mask according to claim 1, wherein the bottom surface of the recess is not parallel to the top surface of the projection. 3. A reflective mask having a pattern of a desired shape, comprising a substrate on which the pattern of the desired shape is formed, wherein a portion corresponding to the pattern of the desired shape forms a convex portion, and a remaining portion. Form a concave portion, the top surface of the convex portion has a light-reflecting property, the surface of the concave portion is not parallel to the top surface of the convex portion,
Reflective mask. 4. A reflective mask having a pattern of a desired shape, comprising a substrate on which the pattern of the desired shape is formed, wherein a portion corresponding to the pattern of the desired shape forms a convex portion, and a remaining portion. Is a reflective mask in which the surface forming the concave portion has a surface that is not parallel to the top surface of the convex portion, and the surfaces of the convex portion and the concave portion both have a light-reflecting property. 5. A reflective mask for transferring a pattern of a desired shape onto a photosensitive member, wherein the received light provided for forming the pattern of the desired shape to be transferred onto the photosensitive member is reflected on the photosensitive member. A reflection-type mask comprising a light-reflecting surface and a light-shielding surface that shields received light from the photosensitive member, wherein the light-reflecting surface and the light-shielding surface are not parallel.