JPH07122474A - Aligner - Google Patents
AlignerInfo
- Publication number
- JPH07122474A JPH07122474A JP5263742A JP26374293A JPH07122474A JP H07122474 A JPH07122474 A JP H07122474A JP 5263742 A JP5263742 A JP 5263742A JP 26374293 A JP26374293 A JP 26374293A JP H07122474 A JPH07122474 A JP H07122474A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- photomask
- polarizing plate
- light
- film magnetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Magnetic Heads (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は薄膜素子の製造に係る露
光装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exposure apparatus for manufacturing thin film elements.
【０００２】[0002]
【従来の技術】従来の露光装置では、フォトマスクと試
料基板上のフォトレジストを接近、もしくは密着させた
状態で光源からの光を照射し、フォトマスク表面上に印
刷された金属薄膜パターンで光源からの光を物理的に遮
って、試料基板の表面上のフォトレジストの必要な部分
だけを選択的に露光していた。2. Description of the Related Art In a conventional exposure apparatus, light from a light source is irradiated in a state where a photomask and a photoresist on a sample substrate are close to or in close contact with each other, and a light source is formed by a metal thin film pattern printed on the surface of the photomask. The light from the substrate was physically blocked, and only the required portion of the photoresist on the surface of the sample substrate was selectively exposed.
【０００３】[0003]
【発明が解決しようとする課題】薄膜素子を高精度で製
造するためには、フォトマスク表面の金属薄膜パターン
の形状に忠実な形状で露光できることが望まれるが、金
属薄膜パターンで光源からの光を物理的に遮る従来の露
光装置では、金属薄膜パターンで光源からの光を遮る際
に金属薄膜パターンのエッジで光の回折や散乱が起こる
ため、フォトマスクのパターンがぼやけて露光されてし
まう。In order to manufacture a thin film element with high accuracy, it is desirable that the metal thin film pattern can be exposed in a shape faithful to the shape of the metal thin film pattern on the photomask surface. In a conventional exposure apparatus that physically blocks the light, when the light from the light source is blocked by the metal thin film pattern, light is diffracted or scattered at the edge of the metal thin film pattern, so that the pattern of the photomask is unclearly exposed.
【０００４】本発明はこのような点に鑑み、フォトマス
クのパターンの形状に忠実な形状に露光できる露光装置
の提供を目的とする。In view of the above points, the present invention has as its object the provision of an exposure apparatus capable of exposing in a shape faithful to the shape of the pattern of a photomask.
【０００５】[0005]
【課題を解決するための手段】本発明は上記課題を解決
し、目的を達成するため、露光用の光源と、表面に薄膜
磁性体が付いた部分と付いていない部分とを有するフォ
トマスクと、前記フォトマスクと試料基板の間の位置に
接近させて設置した偏光板とを有し、前記光源からの光
が前記薄膜磁性体が付いた部分のフォトマスクを偏光面
が回転して通過し、付いていない部分はそのまま通過
し、その後、前記フォトマスクを偏光面が回転して通過
した光源の光だけが前記偏光板を通過するようにしたこ
とを特徴とする。In order to solve the above problems and to achieve the object, the present invention provides a light source for exposure, and a photomask having a portion with a thin film magnetic substance on the surface and a portion without the thin film magnetic substance. , A polarizing plate installed close to the position between the photomask and the sample substrate, and the light from the light source passes through the photomask in the portion with the thin film magnetic material while rotating the polarization plane. It is characterized in that the part not attached passes through as it is, and thereafter, only the light of the light source which has passed through the photomask with its polarization plane rotated and passes through the polarizing plate.
【０００６】また、光源としてレーザー光源を用い、フ
ォトマスク表面の薄膜磁性体としてＹ3Ｆe5Ｏ12を用い
る。A laser light source is used as a light source, and Y 3 Fe 5 O 12 is used as a thin film magnetic material on the photomask surface.
【０００７】[0007]
【作用】本発明の露光装置では、表面に薄膜磁性体の付
いた部分と付いていない部分からなるフォトマスクを用
いる。このフォトマスクと試料基板の間の位置に偏光板
を接近させて設置する。光源からの偏光した光はフォト
マスクに照射される。この際、薄膜磁性体が付いている
部分に入射した光はファラデー効果によってその偏光面
が回転してフォトマスクを通過する。薄膜磁性体が付い
ていない部分に入射した光はそのままの状態でフォトマ
スクを通過する。偏光板の角度を、光源からの光の偏光
面の角度に対して互いに直交する角度に予めセットして
おくことにより、薄膜磁性体が付いている部分を通過し
た光だけが偏光板を通過する。In the exposure apparatus of the present invention, a photomask having a portion with a thin film magnetic material and a portion without the thin film magnetic material on the surface is used. A polarizing plate is placed close to the position between the photomask and the sample substrate. The polarized light from the light source illuminates the photomask. At this time, the light incident on the portion with the thin film magnetic substance rotates its polarization plane by the Faraday effect and passes through the photomask. The light incident on the portion without the thin film magnetic material passes through the photomask as it is. By setting the angle of the polarizing plate to an angle that is orthogonal to the angle of the plane of polarization of the light from the light source, only the light that has passed through the part with the thin film magnetic substance passes through the polarizing plate. .
【０００８】一方、薄膜磁性体が付いていない部分を通
過した光は偏光板を通過することができずにカットされ
る。こうして薄膜磁性体の付いている部分に入射した光
だけが試料基板上のフォトレジストに到達し、薄膜磁性
体の形状に忠実に露光できる。これでは物理的に光を遮
るわけではないため、従来の金属薄膜を用いたフォトマ
スクを使用したときに生ずる金属薄膜のエッジ部からの
散乱や回折による露光のぼやけが生じない。On the other hand, the light which has passed through the portion without the thin film magnetic substance cannot pass through the polarizing plate and is cut. In this way, only the light that has entered the portion with the thin film magnetic material reaches the photoresist on the sample substrate, and the shape of the thin film magnetic material can be exposed faithfully. Since this does not physically block light, exposure blurring due to scattering and diffraction from the edge portion of the metal thin film that occurs when using a conventional photomask using a metal thin film does not occur.
【０００９】光源としてレーザー光源を用いると、水銀
ランプ等の光源に比較して偏光特性や指向性に優れるた
め、より高精度での露光が可能となる。またフォトレジ
スト表面に付ける薄膜磁性体にファラデー回転度の大き
いＹ3Ｆe5Ｏ12を用いることにより、試料基板表面での
露光する部分と露光しない部分の光量差が大きくなり、
より高精度な露光が可能になる。薄膜磁性体Ｙ3Ｆe5Ｏ
12はファラデー回転角が2.6×102deg／cmと大きく、な
おかつ吸収係数が低いために光の透過性が良い。When a laser light source is used as the light source, the polarization characteristics and the directivity are superior to those of a light source such as a mercury lamp, so that exposure can be performed with higher accuracy. Further, by using Y 3 Fe 5 O 12 having a large Faraday rotation degree for the thin film magnetic body attached to the photoresist surface, the light amount difference between the exposed portion and the unexposed portion on the sample substrate surface becomes large,
Higher precision exposure becomes possible. Thin film magnetic material Y 3 Fe 5 O
No. 12 has a large Faraday rotation angle of 2.6 × 10 2 deg / cm and has a low absorption coefficient, so it has good light transmittance.
【００１０】[0010]
【実施例】図１は本発明の一実施例における露光装置の
構成図を示し、図１において、１はレーザー光源、２は
ビームエキスパンダー、３は偏光板Ａ、４はＹ3Ｆe5Ｏ
12を用いた薄膜磁性体、５は薄膜磁性体４が表面に付い
ている部分と付いていない部分からなるフォトマスク、
６はフォトマスク５と後記試料基板８の間の位置に接近
させて設置した偏光板Ｂ、７はフォトレジストで、試料
基板８の表面上に有する。FIG. 1 is a block diagram of an exposure apparatus according to an embodiment of the present invention. In FIG. 1, 1 is a laser light source, 2 is a beam expander, 3 is a polarizing plate A, and 4 is Y 3 Fe 5 O.
12 , a thin film magnetic body 5 is a photomask composed of a portion where the thin film magnetic body 4 is attached and a portion where it is not attached,
Reference numerals 6 and 6 denote polarizing plates B and 7 placed close to the position between the photomask 5 and the sample substrate 8 described below, which are provided on the surface of the sample substrate 8.
【００１１】次に、本装置の動作を説明すると、レーザ
ー光源１から発した光をビームエキスパンダー２でビー
ム径を拡大し、偏光板Ａ３に入射させて直線偏光とし
た。この光を薄膜磁性体４の付いたフォトマスク５に入
射した。レーザー光源１には波長488nmのアルゴンレー
ザーを用いた。また、このときの薄膜磁性体４はＹ3Ｆe
5Ｏ12を用い、膜厚は1000Åである。偏光板Ｂ６の偏光
面の角度が偏光板Ａ３の偏光面の角度に対して互いに直
交するように、予め偏光板Ｂ６の角度をセットしておい
た。フォトマスク５に入射した光のうち、薄膜磁性体４
の付いていない部分に入射した光は偏光板Ｂ６で反射
し、薄膜磁性体４の付いた部分に入射した光は偏光板Ｂ
６を通過して試料基板８の表面上のフォトレジスト７を
露光した。Next, the operation of this apparatus will be described. The light emitted from the laser light source 1 is expanded in beam diameter by the beam expander 2 and is incident on the polarizing plate A3 to be linearly polarized light. This light was incident on the photomask 5 with the thin film magnetic body 4. As the laser light source 1, an argon laser having a wavelength of 488 nm was used. In addition, the thin film magnetic body 4 at this time is Y 3 Fe
5 O 12 is used and the film thickness is 1000Å. The angle of the polarizing plate B6 was set in advance so that the angle of the polarizing plane of the polarizing plate B6 was orthogonal to the angle of the polarizing plane of the polarizing plate A3. Of the light incident on the photomask 5, the thin film magnetic material 4
The light incident on the part without the mark is reflected by the polarizing plate B6, and the light incident on the part with the thin film magnetic body 4 is reflected on the polarizing plate B6.
The photoresist 7 on the surface of the sample substrate 8 was exposed by passing through 6.
【００１２】図４は従来の露光装置で得られたフォトレ
ジストパターンの断面プロファイルを示し、これは通常
の金属薄膜10の付いたフォトマスク９を用いて、試料基
板８上のフォトレジスト７とフォトマスク９を密着させ
た状態で露光し、現像して得られた試料の断面プロファ
イルである。このとき、使用したフォトマスク９は線幅
１μmでピッチ２μmのストライプ状のパターンで、フォ
トレジスト７はポジ型で膜厚３μmであった。FIG. 4 shows a cross-sectional profile of a photoresist pattern obtained by a conventional exposure apparatus, which shows a photoresist 7 on a sample substrate 8 and a photoresist using a photomask 9 with a usual metal thin film 10. It is a cross-sectional profile of the sample obtained by exposing and developing with the mask 9 in close contact. At this time, the photomask 9 used was a stripe pattern having a line width of 1 μm and a pitch of 2 μm, and the photoresist 7 was a positive type and had a film thickness of 3 μm.
【００１３】図２は本発明の一実施例における露光装置
で得られたフォトレジストパターンの断面プロファイル
を示し、これは露光し、現像して得られた試料の断面プ
ロファイルである。なお、露光時の光量やフォトレジス
トの膜厚や現像時間はどちらの場合も同じであった。図
４と図２を比較すると、図４では金属薄膜10のエッジ部
分での光の散乱によってフォトレジスト７の断面がなま
っており、かつフォトレジスト７の幅がフォトマスク９
の幅よりも細くなっていることがわかる。これに対して
図２の本実施例の露光装置による結果ではあまりなまっ
ておらず、フォトレジスト７の幅も細くなっていない。
このことから本実施例の露光装置を用いた方が高精度の
フォトレジストパターンを得ることができることがわか
った。FIG. 2 shows a cross-sectional profile of a photoresist pattern obtained by an exposure apparatus in one embodiment of the present invention, which is a cross-sectional profile of a sample obtained by exposing and developing. The amount of light during exposure, the film thickness of the photoresist, and the development time were the same in both cases. Comparing FIG. 4 and FIG. 2, in FIG. 4, the cross section of the photoresist 7 is blunted by the scattering of light at the edge portion of the metal thin film 10, and the width of the photoresist 7 is equal to the width of the photoresist 7.
You can see that it is narrower than the width of. On the other hand, the result obtained by the exposure apparatus of this embodiment in FIG. 2 is not so much that the width of the photoresist 7 is not thin.
From this, it was found that a highly accurate photoresist pattern can be obtained by using the exposure apparatus of this embodiment.
【００１４】次に、偏光板Ｂ６を偏光した光が通過する
際の偏光面の回転角を予め調べておき、偏光板Ｂ６を通
過する光が偏光板を通過できないように偏光板Ｂ６の角
度をセットしておいた状態でフォトレジスト７を露光し
て現像を行った。ここで得られた試料の断面プロファイ
ルの結果を図３に示す。図２と比較するとレジストパタ
ーンが反転していることがわかる。このようにレジスト
パターンを必要に応じて反転するには、ネガとポジの反
転したフォトマスクを用意するか、ネガ型のフォトレジ
ストを用意する必要がある。本発明の露光装置を用いれ
ば、同一のフォトマスクで、同一のフォトレジストを使
用して容易に高精度の反転したフォトレジストパターン
を得ることができる。Next, the rotation angle of the plane of polarization when the light polarized through the polarizing plate B6 passes is checked in advance, and the angle of the polarizing plate B6 is adjusted so that the light passing through the polarizing plate B6 cannot pass through the polarizing plate. The photoresist 7 was exposed and developed in the set state. The result of the cross-sectional profile of the sample obtained here is shown in FIG. It can be seen that the resist pattern is inverted as compared with FIG. In this way, in order to invert the resist pattern as necessary, it is necessary to prepare a photomask in which the negative and the positive are reversed, or to prepare a negative photoresist. By using the exposure apparatus of the present invention, it is possible to easily obtain a highly accurate inverted photoresist pattern with the same photoresist using the same photoresist.
【００１５】[0015]
【発明の効果】以上説明したように、本発明の露光装置
は、従来の露光装置に比較して高精度なフォトレジスト
パターンを得ることができる。また、偏光板を回転する
だけで、フォトマスクやフォトレジストを変更すること
なしに容易に高精度な反転したフォトレジストパターン
を得ることができる。As described above, the exposure apparatus of the present invention can obtain a highly accurate photoresist pattern as compared with the conventional exposure apparatus. Further, by simply rotating the polarizing plate, a highly accurate inverted photoresist pattern can be easily obtained without changing the photomask or the photoresist.
【図１】本発明の一実施例における露光装置の構成図で
ある。FIG. 1 is a configuration diagram of an exposure apparatus according to an embodiment of the present invention.
【図２】本発明の一実施例における露光装置で得られた
フォトレジストパターンの断面プロファイルである。FIG. 2 is a cross-sectional profile of a photoresist pattern obtained by an exposure apparatus according to an embodiment of the present invention.
【図３】本発明の他の実施例における露光装置で得られ
たフォトレジストパターンの断面プロファイルである。FIG. 3 is a sectional profile of a photoresist pattern obtained by an exposure apparatus according to another embodiment of the present invention.
【図４】従来の露光装置で得られたフォトレジストパタ
ーンの断面プロファイルである。FIG. 4 is a sectional profile of a photoresist pattern obtained by a conventional exposure apparatus.
１…レーザー光源、 ２…ビームエキスパンダー、 ３
…偏光板Ａ、 ４…薄膜磁性体、 ５，９…フォトマス
ク、 ６…偏光板Ｂ、 ７…フォトレジスト、８…試料
基板、 10…金属薄膜。1 ... Laser light source, 2 ... Beam expander, 3
... Polarizing plate A, 4 ... Thin film magnetic material, 5, 9 ... Photomask, 6 ... Polarizing plate B, 7 ... Photoresist, 8 ... Sample substrate, 10 ... Metal thin film.
Claims (3)
いた部分と付いていない部分とを有するフォトマスク
と、前記フォトマスクと試料基板の間の位置に接近させ
て設置した偏光板とを有し、前記光源からの光が前記薄
膜磁性体が付いた部分のフォトマスクを偏光面が回転し
て通過し、付いていない部分はそのまま通過し、その
後、前記フォトマスクを偏光面が回転して通過した光源
の光だけが前記偏光板を通過するようにしたことを特徴
とする露光装置。1. A photomask having a light source for exposure, a portion having a portion having a thin film magnetic substance on the surface and a portion having no thin film magnetic substance on the surface, and a polarizing plate installed close to a position between the photomask and the sample substrate. And the light from the light source has a polarization plane rotated and passed through the photomask in the portion where the thin film magnetic material is attached, and the portion not attached is passed as it is, and then the polarization plane is passed through the photomask. An exposure apparatus, wherein only the light of the light source that has rotated and passed through passes through the polarizing plate.
とを特徴とする請求項１項記載の露光装置。2. The exposure apparatus according to claim 1, wherein a laser light source is used as the light source.
てＹ3Ｆe5Ｏ12を用いることを特徴とする請求項１項記
載の露光装置。3. The exposure apparatus according to claim 1, wherein Y 3 Fe 5 O 12 is used as the thin film magnetic material on the surface of the photomask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5263742A JPH07122474A (en) | 1993-10-21 | 1993-10-21 | Aligner |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5263742A JPH07122474A (en) | 1993-10-21 | 1993-10-21 | Aligner |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07122474A true JPH07122474A (en) | 1995-05-12 |
Family
ID=17393663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5263742A Pending JPH07122474A (en) | 1993-10-21 | 1993-10-21 | Aligner |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07122474A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100643684B1 (en) * | 2005-11-04 | 2006-11-10 | 한국과학기술원 | Polymer or resist pattern, and metal film pattern, metal pattern, and plastic mold using thereof, and methods of forming the sames |
| KR100871788B1 (en) * | 2002-10-18 | 2008-12-05 | 엘지디스플레이 주식회사 | apparatus and method of photo-lithography |
-
1993
- 1993-10-21 JP JP5263742A patent/JPH07122474A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100871788B1 (en) * | 2002-10-18 | 2008-12-05 | 엘지디스플레이 주식회사 | apparatus and method of photo-lithography |
| KR100643684B1 (en) * | 2005-11-04 | 2006-11-10 | 한국과학기술원 | Polymer or resist pattern, and metal film pattern, metal pattern, and plastic mold using thereof, and methods of forming the sames |
| WO2007052978A1 (en) * | 2005-11-04 | 2007-05-10 | Korea Advanced Institute Of Science & Technology | Polymer or resist pattern, and metal film pattern, metal pattern and plastic mold using the same, and fabrication methods thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5723236A (en) | Photomasks and a manufacturing method thereof | |
| US4415262A (en) | Photomask | |
| JPH03210560A (en) | Mask for projection exposing | |
| JPH06289589A (en) | Phase shift mask, its manufacturing method and blank used therefor | |
| JPH07122474A (en) | Aligner | |
| US7465522B2 (en) | Photolithographic mask having half tone main features and perpendicular half tone assist features | |
| JPH06250376A (en) | Phase shift mask and production of phase shift mask | |
| JP3083551B2 (en) | Exposure mask and method of manufacturing the same | |
| JP3791673B2 (en) | Near-field light exposure system | |
| JPH07152144A (en) | Phase shift mask | |
| US5248574A (en) | Photomask | |
| JP2946567B2 (en) | Memory semiconductor structure and phase shift mask | |
| JP3381933B2 (en) | Exposure mask | |
| JP2859894B2 (en) | Exposure mask, method of manufacturing exposure mask, and exposure method using the same | |
| JP4296024B2 (en) | Exposure method | |
| JPH08153664A (en) | Pattern transferring method | |
| JPH0845810A (en) | Formation of resist pattern | |
| JP2589137B2 (en) | Exposure method | |
| JPS61240202A (en) | Method and apparatus for forming fine periodic lattice | |
| JP2001223155A (en) | Photolithography method | |
| JPH04362949A (en) | Mask substrate for exposure, projection aligner, and pattern forming method | |
| KR100605507B1 (en) | Apparatus and Method for Evaluating Polarization of Light | |
| JPH02298948A (en) | Pattern formation | |
| JPH0792656A (en) | Reticle for exposing, exposing device and exposing method for production of semiconductor device | |
| JPS62264052A (en) | Mask for exposure |